CN112964710A - Dislocation measuring method of gallium arsenide wafer - Google Patents
Dislocation measuring method of gallium arsenide wafer Download PDFInfo
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 68
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000008367 deionised water Substances 0.000 claims abstract description 20
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 20
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 15
- 238000005406 washing Methods 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000009835 boiling Methods 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 122
- 239000007788 liquid Substances 0.000 claims description 17
- 238000010411 cooking Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000000691 measurement method Methods 0.000 claims 4
- 238000001514 detection method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 abstract 1
- 229910001868 water Inorganic materials 0.000 description 9
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910005534 GaO2 Inorganic materials 0.000 description 1
- LZYIDMKXGSDQMT-UHFFFAOYSA-N arsenic dioxide Inorganic materials [O][As]=O LZYIDMKXGSDQMT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to the technical field of semiconductor materials, and discloses a dislocation determination method of a gallium arsenide wafer, which comprises the following steps of S1, grinding the gallium arsenide wafer by using grinding fluid until no saw line exists; s2, preparing an etching solution consisting of hydrogen peroxide, deionized water and ammonium hydroxide, putting the ground gallium arsenide wafer into the etching solution for etching, taking out the wafer for washing, and wiping the wafer to be dry; s3, putting the gallium arsenide wafer into a nickel pot to be burnt with KOH; s4, taking the gallium arsenide wafer out of the nickel pot, putting the gallium arsenide wafer into deionized water at 90-100 ℃ for boiling, after all KOH on the surface of the gallium arsenide wafer is removed, washing the gallium arsenide wafer clean, and wiping the wafer dry; s5, observing the unit cell direction and dislocation density of the crystal under an optical microscope. The invention solves the problems that the existing dislocation measuring method of the gallium arsenide wafer has complex process, the density of etching pits of the wafer is not clear and accurate enough, and the efficiency of gallium arsenide etching dislocation and the accuracy of EPD quantity are lower.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a dislocation determination method of a gallium arsenide wafer.
Background
Gallium arsenide (GaAs for short) is one of the most important semiconductor materials with the largest production volume and the most widely used at present. Gallium arsenide is a second generation III-V group compound semiconductor material, is an electronic information functional material with excellent performance, and has the characteristics of high speed, high frequency, high temperature resistance, low noise, luminescence and the like. Compared with Si, the GaAs has high electron movement speed, can be used for preparing the microwave device with the working frequency of up to 100GHz, and can meet the requirements of a microwave device with remote communication. Due to the inherent advantages of gallium arsenide, gallium arsenide has critical applications in the fields of satellite data transmission, communication, microelectronics, and optoelectronics.
With the development of GaAs devices, the performance of GaAs materials is receiving wide attention, and in the semiconductor material industry, in order to produce a qualified GaAs wafer, the wafer is taken from two ends of a GaAs crystal bar and subjected to Hall test to obtain data of resistivity, electron mobility and carrier concentration, mainly dislocation density test, and finally whether the requirements of customers are met is judged according to the detected data.
There are currently two methods for determining the dislocation density of a crystal: 1. etching the chemical mechanical polishing sheet; 2. and polishing and corroding by using the chemical polishing solution. However, the existing gallium arsenide wafer dislocation determination method is complex in process and influenced by the shape and crystal orientation angle of the wafer, so that the Etching Pit Density (EPD) of the wafer is not clear and accurate enough, and the gallium arsenide etching dislocation efficiency and the EPD quantity accuracy are low.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a method for measuring dislocations of a gaas wafer, which solves the problems of the existing method for measuring dislocations of a gaas wafer, such as complex process, unclear and inaccurate chip Etch Pit Density (EPD), and low efficiency of gaas etching dislocations and accuracy of EPD quantity.
The invention solves the technical problems by the following technical means:
a dislocation measuring method of a gallium arsenide wafer comprises the following steps,
s1, grinding the GaAs chip by the grinding liquid until no saw line exists;
s2, preparing an etching solution consisting of hydrogen peroxide, deionized water and ammonium hydroxide, putting the ground gallium arsenide wafer into the etching solution for etching, taking out the wafer for washing, and wiping the wafer to be dry;
s3, putting the gallium arsenide wafer into a nickel pot to be burnt with KOH;
s4, taking the gallium arsenide wafer out of the nickel pot, putting the gallium arsenide wafer into deionized water at 90-100 ℃ for boiling, after all KOH on the surface of the gallium arsenide wafer is removed, washing the gallium arsenide wafer clean, and wiping the wafer dry;
s5, observing the unit cell direction and dislocation density of the crystal under an optical microscope.
Further, the mass ratio of the hydrogen peroxide to the deionized water to the ammonium hydroxide is 1: 1: (1-2).
Further, the mass concentration of the hydrogen peroxide is 30-32%, and the mass concentration of the ammonium hydroxide is 28-30%. Firstly, performing oxidation reaction on a gallium arsenide single chip and a hydrogen peroxide oxidizing agent to generate a layer of oxide on the surface of the gallium arsenide single chip; then the oxide on the surface of the gallium arsenide wafer reacts with the ammonium hydroxide complexing agent and is dissolved in the corrosive liquid; then, the surface of the gallium arsenide wafer continuously reacts with the corrosive liquid, and is oxidized and dissolved at the same time; and finally, the gallium arsenide wafer is separated from the etching solution, and the reaction is terminated. The chemical reaction principle is as follows:
H2O2→H2O+[O] (1)
GaAs+[O]→Ga2O3+As2O3 (2)
Ga2O3+NH4OH→NH4GaO2+H2O (3)
As2O3+NH4OH→NH4AsO2+H2O (4)
in the above formula, (1) and (2) are the first step of chemical corrosion, which is called oxidation process; (3) and (4) the second step of chemical corrosion is called dissolution process. The etching solution is stable, the shape of the etched wafer is good, the surface of the wafer is bright and smooth, and good conditions are provided for EPD counting.
Further, the etching time in the step S2 is controlled to be 3-5 minutes. The general gallium arsenide wafer can reach the state of shining surface after being corroded in the corrosive liquid composed of hydrogen oxide, deionized water and ammonium hydroxide for 3-5 minutes.
Further, in the step S3, the gallium arsenide wafer is put into a nickel pot and KOH is burned, specifically: firstly, packaging the corroded gallium arsenide wafer by using a nickel wire basket; then laying a layer of KOH at the bottom of the nickel pot, putting the nickel wire basket into the nickel pot, and adding KOH into the nickel pot until the gallium arsenide chip is completely covered by the KOH; and finally, burning KOH, raising the temperature to 385 ℃, preserving the temperature for 10 minutes, and naturally cooling. Therefore, the gallium arsenide wafer can not be adhered when burning KOH, and the surface of the gallium arsenide wafer can be fully contacted with KOH.
Further, in the step S4, the cooking time in the deionized water is 5 to 10 minutes. The time of 5-10 minutes can basically remove KOH on the surface of the gallium arsenide wafer.
Further, in the step S4, the mass purity of KOH is not less than 90%.
Further, the light microscope used in the step a5 is model No. olympus MX 51.
The invention has the beneficial effects that:
the etching solution is stable, the shape of the etched gallium arsenide wafer is good, the surface of the gallium arsenide wafer is bright and smooth, good conditions are provided for EPD counting, the EPD density in the gallium arsenide wafer can be rapidly measured, the operation process is simple and rapid, the gallium arsenide wafer is not influenced by the shape and the crystal orientation angle, the etched EPD is clear and visible, the gallium arsenide etching dislocation efficiency and the EPD quantity accuracy are greatly improved, the unqualified gallium arsenide wafer is prevented from flowing to a next process and customers, the cost waste caused by processing unqualified gallium arsenide wafers is reduced, and the customer complaint rate is effectively reduced.
Drawings
FIG. 1 is an EPD profile of a GaAs wafer after being processed by the dislocation determination method of the GaAs wafer according to embodiment 2 of the present invention;
FIG. 2 shows EPD morphology of GaAs wafer processed by conventional chemical polishing slurry polishing and etching method in comparative example.
Detailed Description
The invention will be described in detail below with reference to the following drawings:
as shown in fig. 1-2:
examples 1,
The dislocation measuring method of the gallium arsenide wafer of the present embodiment includes the following steps,
s1, grinding the gallium arsenide wafer to be corroded by the grinding liquid until no saw lines exist, and washing the gallium arsenide wafer clean to avoid the influence of the saw lines on the appearance and the reading of the subsequent EPD;
s2, preparing a corrosive liquid composed of hydrogen peroxide, deionized water and ammonium hydroxide, wherein the mass ratio of the hydrogen peroxide to the deionized water to the ammonium hydroxide is 1: 1: 1, putting the ground gallium arsenide wafer into a corrosive liquid to corrode for 3 minutes until the surface shines, taking out the gallium arsenide wafer after the gallium arsenide wafer is put into the corrosive liquid to corrode for 3 minutes, washing the gallium arsenide wafer clean by pure water, and wiping the gallium arsenide wafer dry;
s3, putting the gallium arsenide wafer into a nickel pot to burn KOH, wherein the mass purity of the KOH is 90%; the method specifically comprises the following steps: firstly, installing the corroded wafer by using a nickel wire basket, so that the wafer is not adhered when being burnt with KOH and the surface of the wafer can be fully contacted with the KOH; firstly, laying a layer of KOH at the bottom of a nickel pot, putting a nickel wire basket into the nickel pot, and then adding KOH into the nickel pot until the KOH completely covers the wafer; then, turning on an electric furnace to burn KOH, measuring the temperature to 385 ℃ by using a thermocouple, preserving the temperature for 10 minutes, and then turning off a power supply to cool;
s4, boiling water by using an induction cooker, taking the gallium arsenide wafer out of the nickel pot, putting the gallium arsenide wafer into deionized water at 90 ℃ for boiling for 5 minutes, and after all KOH on the surface of the gallium arsenide wafer is removed, washing the gallium arsenide wafer clean and wiping the wafer dry;
s5, observing the unit cell direction and dislocation density of the crystal under an optical microscope with the model of olympus MX 51.
Examples 2,
The dislocation measuring method of the gallium arsenide wafer of the present embodiment includes the following steps,
s1, grinding the gallium arsenide wafer to be corroded by the grinding liquid until no saw lines exist, and washing the gallium arsenide wafer clean to avoid the influence of the saw lines on the appearance and the reading of the subsequent EPD;
s2, preparing a corrosive liquid composed of hydrogen peroxide, deionized water and ammonium hydroxide, wherein the mass ratio of the hydrogen peroxide to the deionized water to the ammonium hydroxide is 1: 1: 1.5, putting the ground gallium arsenide wafer into a corrosive liquid to corrode for 4 minutes until the surface shines, taking out the gallium arsenide wafer after the gallium arsenide wafer is put into the corrosive liquid to corrode for 4 minutes, washing the gallium arsenide wafer by pure water, and wiping the gallium arsenide wafer to be dry;
s3, putting the gallium arsenide wafer into a nickel pot to burn KOH, wherein the mass purity of the KOH is 95%; the method specifically comprises the following steps: firstly, installing the corroded wafer by using a nickel wire basket, so that the wafer is not adhered when being burnt with KOH and the surface of the wafer can be fully contacted with the KOH; firstly, laying a layer of KOH at the bottom of a nickel pot, putting a nickel wire basket into the nickel pot, and then adding KOH into the nickel pot until the KOH completely covers the wafer; then, turning on an electric furnace to burn KOH, measuring the temperature to 385 ℃ by using a thermocouple, preserving the temperature for 10 minutes, and then turning off a power supply to cool;
s4, boiling water by using an induction cooker, taking the gallium arsenide wafer out of the nickel pot, putting the gallium arsenide wafer into deionized water at the temperature of 95 ℃ for boiling for 5 minutes, and after all KOH on the surface of the gallium arsenide wafer is removed, washing the gallium arsenide wafer clean and wiping the wafer dry;
s5, observing the unit cell direction and dislocation density of the crystal under an optical microscope with the model of olympus MX 51.
Examples 3,
The dislocation measuring method of the gallium arsenide wafer of the present embodiment includes the following steps,
s1, grinding the gallium arsenide wafer to be corroded by the grinding liquid until no saw lines exist, and washing the gallium arsenide wafer clean to avoid the influence of the saw lines on the appearance and the reading of the subsequent EPD;
s2, preparing a corrosive liquid composed of hydrogen peroxide, deionized water and ammonium hydroxide, wherein the mass ratio of the hydrogen peroxide to the deionized water to the ammonium hydroxide is 1: 1: 2, putting the ground gallium arsenide wafer into a corrosive liquid to corrode for 5 minutes until the surface shines, taking out the gallium arsenide wafer after the gallium arsenide wafer is put into the corrosive liquid to corrode for 5 minutes, washing the gallium arsenide wafer clean by pure water, and wiping the gallium arsenide wafer dry;
s3, putting the gallium arsenide wafer into a nickel pot to burn KOH, wherein the mass purity of the KOH is 98%; the method specifically comprises the following steps: firstly, installing the corroded wafer by using a nickel wire basket, so that the wafer is not adhered when being burnt with KOH and the surface of the wafer can be fully contacted with the KOH; firstly, laying a layer of KOH at the bottom of a nickel pot, putting a nickel wire basket into the nickel pot, and then adding KOH into the nickel pot until the KOH completely covers the wafer; then, turning on an electric furnace to burn KOH, measuring the temperature to 385 ℃ by using a thermocouple, preserving the temperature for 10 minutes, and then turning off a power supply to cool;
s4, boiling water by using an induction cooker, taking the gallium arsenide wafer out of the nickel pot, putting the gallium arsenide wafer into deionized water at 100 ℃ for boiling for 10 minutes, and after all KOH on the surface of the gallium arsenide wafer is removed, washing the gallium arsenide wafer clean and wiping the wafer dry;
s5, observing the unit cell direction and dislocation density of the crystal under an optical microscope with the model of olympus MX 51.
Comparative examples,
In the method of the embodiment, dislocation determination of the gallium arsenide wafer is performed by adopting a method of national standard gallium arsenide single crystal dislocation density measurement (GB/T8760-2006).
The final EPD topography of the gaas wafer measured using the method of example 2 is shown in fig. 1, and the EPD topography of the gaas wafer measured using the method of the comparative example is shown in fig. 2.
By comparison, it can be seen that FIG. 1 shows the EPD morphology after the inventive process, and the wafer surface processed by the inventive process has high flatness; the EPD is clearly visible and consistent in shape and size, is in a standard (100) to (111) 15-degree EPD shape, and greatly improves the gallium arsenide corrosion dislocation efficiency and the EPD quantity accuracy.
Fig. 2 shows the EPD topography after the conventional processing method of the present comparative example, wherein the flatness of the surface of the processed wafer is not high, the EPD shapes are not consistent and the EPD sizes are not consistent, which affects the calculation of the EPD quantity.
Therefore, the etching solution is stable, the shape of the etched gallium arsenide wafer is good, the surface of the gallium arsenide wafer is bright and smooth, good conditions are provided for EPD counting, the EPD density in the gallium arsenide wafer can be rapidly measured, the operation process is simple and rapid, the influence of the shape and the crystal orientation angle of the gallium arsenide wafer is avoided, the etched EPD is clear and visible, the efficiency of gallium arsenide etching dislocation and the accuracy of the EPD quantity are greatly improved, and unqualified gallium arsenide wafers are prevented from flowing to next processes and customers.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims. The techniques, shapes, and configurations not described in detail in the present invention are all known techniques.
Claims (8)
1. A dislocation measuring method of a gallium arsenide wafer is characterized in that: comprises the following steps of (a) carrying out,
s1, grinding the GaAs chip by the grinding liquid until no saw line exists;
s2, preparing an etching solution consisting of hydrogen peroxide, deionized water and ammonium hydroxide, putting the ground gallium arsenide wafer into the etching solution for etching, taking out the wafer for washing, and wiping the wafer to be dry;
s3, putting the gallium arsenide wafer into a nickel pot to be burnt with KOH;
s4, taking the gallium arsenide wafer out of the nickel pot, putting the gallium arsenide wafer into deionized water at 90-100 ℃ for boiling, after all KOH on the surface of the gallium arsenide wafer is removed, washing the gallium arsenide wafer clean, and wiping the wafer dry;
s5, observing the unit cell direction and dislocation density of the crystal under an optical microscope.
2. The dislocation measurement method of a gallium arsenide wafer as recited in claim 1, wherein: the mass ratio of the hydrogen peroxide to the deionized water to the ammonium hydroxide is 1: 1: (1-2).
3. The dislocation measuring method of a gallium arsenide wafer as recited in claim 2, wherein: the mass concentration of the hydrogen peroxide is 30-32%, and the mass concentration of the ammonium hydroxide is 28-30%.
4. The dislocation measurement method of a gallium arsenide wafer as recited in claim 3, wherein: the etching time in the step S2 is controlled to be 3-5 minutes.
5. The dislocation detection method for gallium arsenide wafer as recited in claim 4, wherein: in the step S3, the gallium arsenide wafer is put into a nickel pot and KOH is burned, specifically: firstly, packaging the corroded gallium arsenide wafer by using a nickel wire basket; then laying a layer of KOH at the bottom of the nickel pot, putting the nickel wire basket into the nickel pot, and adding KOH into the nickel pot until the gallium arsenide chip is completely covered by the KOH; and finally, burning KOH, raising the temperature to 385 ℃, preserving the temperature for 10 minutes, and naturally cooling.
6. The dislocation measurement method of gallium arsenide wafer as claimed in claim 5, wherein: in the step S4, the cooking time in the deionized water is 5-10 minutes.
7. The dislocation measurement method of a gallium arsenide wafer as recited in claim 6, wherein: in the step S4, the mass purity of KOH is more than or equal to 90%.
8. A dislocation determination method for gallium arsenide wafers as claimed in any of claims 1-7 wherein: the light microscope used in step A5 was model No. olympus MX 51.
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| JPH02130848A (en) * | 1988-11-10 | 1990-05-18 | Hitachi Cable Ltd | Evaluating method for surface of gaas wafer |
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| CN102199773A (en) * | 2011-04-06 | 2011-09-28 | 连云港中彩科技有限公司 | Novel method for corroding polycrystalline silicon core |
| CN102607923A (en) * | 2012-04-11 | 2012-07-25 | 中国科学院半导体研究所 | Silicon carbide material corrosion furnace |
| CN102618936A (en) * | 2012-03-21 | 2012-08-01 | 北京通美晶体技术有限公司 | Gallium arsenide surface chemical etching method and chemical etchant |
| CN106000977A (en) * | 2016-08-01 | 2016-10-12 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide single chip |
| CN110373720A (en) * | 2019-09-03 | 2019-10-25 | 广东先导先进材料股份有限公司 | A kind of minimizing technology that GaAs back is invaded |
| CN112082992A (en) * | 2020-07-22 | 2020-12-15 | 威科赛乐微电子股份有限公司 | Dislocation determination method for indium phosphide wafer |
-
2021
- 2021-01-22 CN CN202110091181.3A patent/CN112964710A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130848A (en) * | 1988-11-10 | 1990-05-18 | Hitachi Cable Ltd | Evaluating method for surface of gaas wafer |
| CN1796968A (en) * | 2004-12-27 | 2006-07-05 | 中国电子科技集团公司第四十六研究所 | Method for detecting defect of single crystal structure of gallium arsenide in large size |
| CN102199773A (en) * | 2011-04-06 | 2011-09-28 | 连云港中彩科技有限公司 | Novel method for corroding polycrystalline silicon core |
| CN102618936A (en) * | 2012-03-21 | 2012-08-01 | 北京通美晶体技术有限公司 | Gallium arsenide surface chemical etching method and chemical etchant |
| CN102607923A (en) * | 2012-04-11 | 2012-07-25 | 中国科学院半导体研究所 | Silicon carbide material corrosion furnace |
| CN106000977A (en) * | 2016-08-01 | 2016-10-12 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide single chip |
| CN110373720A (en) * | 2019-09-03 | 2019-10-25 | 广东先导先进材料股份有限公司 | A kind of minimizing technology that GaAs back is invaded |
| CN112082992A (en) * | 2020-07-22 | 2020-12-15 | 威科赛乐微电子股份有限公司 | Dislocation determination method for indium phosphide wafer |
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