CN112953491A - Bias circuit and method of radio frequency switch - Google Patents

Bias circuit and method of radio frequency switch Download PDF

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Publication number
CN112953491A
CN112953491A CN202110221330.3A CN202110221330A CN112953491A CN 112953491 A CN112953491 A CN 112953491A CN 202110221330 A CN202110221330 A CN 202110221330A CN 112953491 A CN112953491 A CN 112953491A
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CN
China
Prior art keywords
radio frequency
circuit
frequency switch
switch
driving circuit
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Pending
Application number
CN202110221330.3A
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Chinese (zh)
Inventor
寇涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Weile Microelectronic Co ltd
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Shanghai Weile Microelectronic Co ltd
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Publication of CN112953491A publication Critical patent/CN112953491A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Abstract

The embodiment of the application provides a bias circuit and a method of a radio frequency switch, and the circuit comprises a radio frequency switch circuit and a driving circuit; the radio frequency switch circuit comprises a plurality of radio frequency switch units, adjacent radio frequency switch units are connected, the input end of the radio frequency switch circuit is connected with the radio frequency signal input end, and the output end of the radio frequency switch circuit is connected with the radio frequency signal output end; the driving circuit comprises a plurality of driving circuit units, the driving circuit units are arranged in a one-to-one correspondence mode with the radio frequency switch units, the driving circuit is connected with the logic control circuit, and the driving circuit is used for driving the radio frequency switch circuits to be turned off or turned on.

Description

Bias circuit and method of radio frequency switch
Technical Field
The embodiments of the present application relate to the field of integrated circuits, and in particular, to a bias circuit and method for a radio frequency switch.
Background
The radio frequency switch is a module used for switching a radio frequency signal path in a radio frequency front end system and is widely applied to a mobile phone radio frequency front end. In recent years, the rapid popularization of the 5G communication technology brings great opportunities and challenges to a mobile phone radio frequency front-end module, wherein the 5G communication technology requires that the switching time of a radio frequency switch from off to on or from on to off is greatly shortened, and meanwhile, the radio frequency switch is required to keep good harmonic performance when being turned on, and the existing biasing method is difficult to take both the two indexes into consideration.
Disclosure of Invention
Embodiments of the present application aim to overcome the above problems or at least partially solve or alleviate the above problems, and the technical solutions provided by the present application greatly shorten the switching time of a radio frequency switch, while maintaining good harmonic performance.
In order to solve the above problem, an embodiment of the present invention provides a bias circuit for a radio frequency switch, including a radio frequency switch circuit and a driving circuit;
the radio frequency switch circuit comprises a plurality of radio frequency switch units, adjacent radio frequency switch units are connected, the input end of the radio frequency switch circuit is connected with the radio frequency signal input end, and the output end of the radio frequency switch circuit is connected with the radio frequency signal output end;
the driving circuit comprises a plurality of driving circuit units, the driving circuit units are arranged in one-to-one correspondence with the radio frequency switch units, the driving circuit is connected with the logic control circuit, and the driving circuit is used for acquiring logic control signals sent by the logic control circuit so as to control each driving circuit unit to enable the radio frequency switch unit in the corresponding radio frequency control circuit to be switched on or switched off.
As a preferred embodiment of the present invention, each rf switch unit includes a first resistor network, a second resistor network, and an rf switch group;
the radio frequency switch set is arranged between the first resistance network and the second resistance network.
As a preferred embodiment of the present invention, the first resistor network and the second resistor network in each rf switch unit are respectively connected to their corresponding driving circuit units.
As a preferred embodiment of the present invention, the radio frequency switch group includes a plurality of radio frequency switches and a plurality of on-resistances;
two adjacent radio frequency switches are connected through the source and the drain of the two adjacent radio frequency switches, and the drain and the source of each radio frequency switch are connected across an on-resistor;
and the source electrode of the last radio frequency switch in the previous radio frequency switch group is connected with the drain electrode of the first radio frequency switch in the next radio frequency switch group.
As a preferred embodiment of the present invention, the drain of the first rf switch in the first rf switch group in the rf switch circuit is connected to the rf signal input terminal; and the source electrode of the last radio frequency switch in the last radio frequency switch group in the radio frequency switch circuit is connected with the radio frequency signal output end.
As a preferred embodiment of the invention, the gate of each rf switch is connected to a first resistive network and the substrate end of each rf switch is connected to a second resistive network.
As a preferred embodiment of the invention, the resistors in the first and second resistor networks are connected in series and/or in parallel.
As a preferred embodiment of the present invention, the driving circuit includes a charge pump circuit, a level conversion circuit, and a filter circuit;
the output end of the charge pump circuit is connected with the input end of the level conversion circuit;
the output end of the level conversion circuit is connected with the input end of the filter circuit, and the output end of the filter circuit is connected with the first resistor network and the second resistor network in each radio frequency switch unit. .
Compared with the prior art that one driving circuit is shared, the radio frequency switch circuit is flexibly driven in units, each driving circuit unit only needs to drive one radio frequency switch in a radio frequency switch group, the requirement on the driving capability of the driving circuit is greatly reduced, the switching time of the radio frequency switches is greatly shortened, and the harmonic performance is good.
In a second aspect, an embodiment of the present invention further provides a method for biasing a radio frequency switch, including,
acquiring a radio frequency signal through a radio frequency switch circuit;
and each driving circuit unit is controlled by the logic control circuit to enable the radio frequency switch unit in the radio frequency control circuit corresponding to the driving circuit unit to be switched on or switched off so as to enable the radio frequency signal to be transmitted or not transmitted to the radio frequency signal output end, wherein the driving circuit units and the radio frequency switch units are arranged in a one-to-one correspondence manner.
Compared with the prior art, the beneficial effects of the embodiments provided in the second aspect of the present application are the same as the beneficial effects of the bias circuit of the radio frequency switch provided in any one of the above technical solutions, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts or portions, and it will be understood by those skilled in the art that the drawings are not necessarily drawn to scale, in which:
fig. 1 is a schematic diagram of a bias circuit frame structure of an rf switch according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a specific structure of a bias circuit of an rf switch according to an embodiment of the present application.
Fig. 3 is a block diagram of a specific structure of a driving circuit according to an embodiment of the present disclosure.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1, an embodiment of the present invention provides a bias circuit for an rf switch, including an rf switch circuit 01 and a driving circuit 02;
the radio frequency switch circuit 01 comprises a plurality of radio frequency switch units, adjacent radio frequency switch units are connected, the input end of the radio frequency switch circuit 01 is connected with the radio frequency signal input end, and the output end of the radio frequency switch circuit 01 is connected with the radio frequency signal output end;
the driving circuit 02 comprises a plurality of driving circuit units, the driving circuit units and the radio frequency switch units are arranged in a one-to-one correspondence manner, the driving circuit 02 is connected with the logic control circuit 03, and the driving circuit 02 is used for acquiring a logic control signal sent by the logic control circuit 03 so as to control each driving circuit unit to enable the radio frequency switch unit in the radio frequency switch circuit 01 corresponding to the driving circuit unit to be switched on or switched off.
In the embodiment of the invention, the number of the driving circuit units is the same as that of the radio frequency switch units,
each independent driving circuit unit is controlled by the same logic control circuit, namely the logic control circuit enables the corresponding radio frequency switch unit to be switched on or switched off through each driving unit.
Compared with the prior art that one driving circuit is shared, the radio frequency switch circuit is flexibly driven in units, each driving circuit unit only needs to drive one radio frequency switch in a radio frequency switch group, the requirement on the driving capability of the driving circuit is greatly reduced, the switching time of the radio frequency switches is greatly shortened, and the harmonic performance is good.
As shown in fig. 2, an embodiment of the present invention provides a bias circuit for an rf switch, including an rf switch circuit 01 and a driving circuit 02, where the rf switch circuit 01 includes a first resistor network, a second resistor network, and an rf switch group, and the rf switch group includes a plurality of rf switches M1-Mn and a plurality of on-resistors; the drain electrode of a first radio frequency switch M1 in a first radio frequency switch unit in the radio frequency switch circuit 01 is connected with a radio frequency signal input end RFIN, two adjacent radio frequency switches in each radio frequency switch unit are connected through the source electrodes and the drain electrodes of the two adjacent radio frequency switches, and the drain electrode and the source electrode of each radio frequency switch are connected with an on-resistance R in a bridging manner; and the source electrode of the last radio frequency switch in the previous radio frequency switch group is connected with the drain electrode of the first radio frequency switch in the next radio frequency switch group between two adjacent radio frequency switch groups, and the like is carried out until the source electrode of the nth radio frequency switch of the Nth radio frequency switch unit is connected with the radio frequency signal output RFOUT.
The gate of the radio frequency switch M1-Mn in each radio frequency switch unit in the radio frequency switch circuit 01 is connected with the corresponding first resistance network, and the substrate of the first radio frequency switch M1 in the first radio frequency switch unit in the radio frequency switch circuit 01 is connected with the corresponding second resistance network.
Each radio frequency switch unit is provided with a driving circuit unit independently, each driving circuit unit is connected with the first resistance network and the second resistance network in each radio frequency switch unit corresponding to the driving circuit unit, the logic control circuit 03 is used for controlling the on and off of each radio frequency switch unit through the driving circuit 02, and the radio frequency switch units form a radio frequency signal transmission path together. When a radio-frequency signal is input into the radio-frequency signal input end, the logic control circuit 03 enables the radio-frequency switch units to be conducted through the driving circuit 02, so that the radio-frequency signal is transmitted to the radio-frequency signal output end and is provided for a later-stage circuit to use, and when the radio-frequency signal input end does not have the radio-frequency signal, the logic control circuit 03 closes all the radio-frequency switch units to prevent the radio-frequency signal from leaking.
In the specific implementation of the invention, the first resistance network and the second resistance network in each radio frequency switch unit respectively exist independently and are not related to other units, and the first resistance network and the second resistance network can be in a series connection and/or a parallel connection mode.
It should be noted that the structure of the first resistor network and the second resistor network can be in various forms, the parallel connection or the series connection is a way known to circuit designers in the circuit structure, and the solution provided in the present invention is not affected by the form of the resistors, so that the detailed description is not provided herein.
As shown in fig. 3, the drive circuit includes a charge pump circuit 31, a level conversion circuit 32, a filter circuit 33;
the output end of the charge pump circuit 31 is connected with the input end of the level conversion circuit 32;
the output end of the level conversion circuit 32 is connected with the input end of the filter circuit 33, and the output end of the filter circuit 33 is connected with the first resistance network and the second resistance network in each radio frequency switch unit.
The level conversion circuit 32 is used for converting the output voltage of the charge pump circuit, and the filter circuit 33 is used for filtering the ripple interference coupled by the charge pump circuit 31.
Compared with the prior art that one driving circuit is shared, the radio frequency switch circuit is flexibly driven in units, each driving circuit unit only needs to drive one radio frequency switch in a radio frequency switch group, the requirement on the driving capability of the driving circuit is greatly reduced, the switching time of the radio frequency switches is greatly shortened, and the harmonic performance is good.
The technical scheme of the embodiment of the invention shortens the switching time of the radio frequency switch and keeps good harmonic performance.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims (9)

1. The bias circuit of a kind of radio frequency switch, characterized by, including, radio frequency switch circuit and drive circuit;
the radio frequency switch circuit comprises a plurality of radio frequency switch units, adjacent radio frequency switch units are connected, the input end of the radio frequency switch circuit is connected with the radio frequency signal input end, and the output end of the radio frequency switch circuit is connected with the radio frequency signal output end;
the driving circuit comprises a plurality of driving circuit units, the driving circuit units are arranged in one-to-one correspondence with the radio frequency switch units, the driving circuit is connected with the logic control circuit, and the driving circuit is used for acquiring logic control signals sent by the logic control circuit so as to control each driving circuit unit to enable the radio frequency switch unit in the corresponding radio frequency switch circuit to be switched on or switched off.
2. The bias circuit for an rf switch of claim 1, wherein each rf switch unit comprises a first resistor network, a second resistor network, and an rf switch bank;
the radio frequency switch set is arranged between the first resistance network and the second resistance network.
3. The bias circuit of claim 2, wherein the first resistor network and the second resistor network of each rf switch unit are respectively connected to the corresponding driver circuit unit.
4. The bias circuit for rf switches according to claim 2, wherein the rf switch group includes a plurality of rf switches and a plurality of on-resistances;
two adjacent radio frequency switches are connected through the source and the drain of the two adjacent radio frequency switches, and the drain and the source of each radio frequency switch are connected across an on-resistor;
and the source electrode of the last radio frequency switch in the previous radio frequency switch group is connected with the drain electrode of the first radio frequency switch in the next radio frequency switch group.
5. The bias circuit for rf switches according to claim 4, wherein the drain of the first rf switch in the first rf switch set in the rf switch circuit is connected to the rf signal input terminal; and the source electrode of the last radio frequency switch in the last radio frequency switch group in the radio frequency switch circuit is connected with the radio frequency signal output end.
6. A bias circuit for RF switches according to claim 4, wherein the gate of each RF switch is connected to a first resistor network and the substrate end of each RF switch is connected to a second resistor network.
7. The bias circuit for an rf switch of claim 6, wherein the resistors in the first resistor network and the second resistor network are connected in series and/or parallel.
8. The bias circuit of a radio frequency switch according to any one of claims 1 to 7, wherein the driving circuit includes a charge pump circuit, a level conversion circuit and a filter circuit;
the output end of the charge pump circuit is connected with the input end of the level conversion circuit;
the output end of the level conversion circuit is connected with the input end of the filter circuit, and the output end of the filter circuit is connected with the first resistor network and the second resistor network in each radio frequency switch unit.
9. A method for biasing a radio frequency switch, comprising,
acquiring a radio frequency signal through a radio frequency switch circuit;
each driving circuit unit in the driving circuit is controlled by the logic control circuit to enable the corresponding radio frequency switch unit to be switched on or switched off, wherein the driving circuit units and the radio frequency switch units are arranged in a one-to-one correspondence mode.
CN202110221330.3A 2021-02-12 2021-02-27 Bias circuit and method of radio frequency switch Pending CN112953491A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110185938 2021-02-12
CN2021101859385 2021-02-12

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CN112953491A true CN112953491A (en) 2021-06-11

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CN202110221330.3A Pending CN112953491A (en) 2021-02-12 2021-02-27 Bias circuit and method of radio frequency switch

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101567687A (en) * 2008-04-21 2009-10-28 扬智科技股份有限公司 Signal generation circuit
CN102005734A (en) * 2010-10-20 2011-04-06 无锡中星微电子有限公司 Battery protection integrated circuit and system
CN105515561A (en) * 2015-12-01 2016-04-20 唯捷创芯(天津)电子技术股份有限公司 Multipath switching circuit, chip and communication terminal
CN105900339A (en) * 2013-11-13 2016-08-24 天工方案公司 Circuits and methods for improved quality factor in a stack of transistors
CN108933587A (en) * 2018-06-20 2018-12-04 上海华虹宏力半导体制造有限公司 A kind of RF switching unit and its radio-frequency switch circuit
CN109245747A (en) * 2018-11-30 2019-01-18 惠州华芯半导体有限公司 Radio-frequency switch circuit, switch chip and communication terminal
CN109586708A (en) * 2019-01-22 2019-04-05 上海华虹宏力半导体制造有限公司 A kind of RF switch body control driving circuit
CN209517085U (en) * 2019-03-14 2019-10-18 武汉博畅通信设备有限责任公司 A kind of fast frequency-hopped bounce frequency filter
CN111224652A (en) * 2020-01-19 2020-06-02 广州慧智微电子有限公司 Radio frequency switch circuit and circuit control method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101567687A (en) * 2008-04-21 2009-10-28 扬智科技股份有限公司 Signal generation circuit
CN102005734A (en) * 2010-10-20 2011-04-06 无锡中星微电子有限公司 Battery protection integrated circuit and system
CN105900339A (en) * 2013-11-13 2016-08-24 天工方案公司 Circuits and methods for improved quality factor in a stack of transistors
CN105515561A (en) * 2015-12-01 2016-04-20 唯捷创芯(天津)电子技术股份有限公司 Multipath switching circuit, chip and communication terminal
CN108933587A (en) * 2018-06-20 2018-12-04 上海华虹宏力半导体制造有限公司 A kind of RF switching unit and its radio-frequency switch circuit
CN109245747A (en) * 2018-11-30 2019-01-18 惠州华芯半导体有限公司 Radio-frequency switch circuit, switch chip and communication terminal
CN109586708A (en) * 2019-01-22 2019-04-05 上海华虹宏力半导体制造有限公司 A kind of RF switch body control driving circuit
CN209517085U (en) * 2019-03-14 2019-10-18 武汉博畅通信设备有限责任公司 A kind of fast frequency-hopped bounce frequency filter
CN111224652A (en) * 2020-01-19 2020-06-02 广州慧智微电子有限公司 Radio frequency switch circuit and circuit control method

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