CN112946447A - SiC MOSFET short circuit detection circuit based on drain-source conduction voltage integral - Google Patents
SiC MOSFET short circuit detection circuit based on drain-source conduction voltage integral Download PDFInfo
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Abstract
The application provides a SiC MOSFET short circuit detection circuitry based on drain-source turn-on voltage integral relates to power electronics technical field, includes: the primary side of a voltage transformer (PT) is connected in parallel with the drain electrode and the source electrode of the SiC MOSFET in the power electronic circuit; one end of an integrating resistor (R) is connected with one end of the secondary side of a voltage transformer (PT), and the other end of the integrating resistor (R), one end of an integrating capacitor (C) and one end of a switching tube (S1) are connected with the inverting input end of the operational amplifier; the other end of the secondary side of the voltage transformer (PT) is grounded with the non-inverting input end of the operational amplifier, the other end of the integrating capacitor (C) and the other end of the switching tube (S1) are connected with the output end of the operational amplifier, the output end of the operational amplifier is connected with the inverting input end of the comparator, and the non-inverting input end of the comparator is connected with the reference voltage. Therefore, the short-circuit condition of the SiC MOSFET can be quickly detected and the short-circuit signal can be output, and the short-circuit protection action is quicker when the bus voltage is higher, so that the reliability of a power electronic system can be improved.
Description
Technical Field
The application relates to the technical field of power electronics, in particular to a short circuit detection circuit of a SiC MOSFET (silicon carbide semiconductor field effect transistor) based on drain-source breakover voltage integration.
Background
The SiC MOSFET has huge application potential in the aspects of high temperature, high frequency, high voltage, high power and the like, the short circuit capability is one of the key problems of the SiC MOSFET, and the SiC MOSFET has shorter short circuit tolerance time than the traditional Si MOSFET and the Si IGBT under the same withstand voltage condition.
Research results show that the short circuit endurance time of the SiC MOSFET is reduced along with the increase of the direct current bus voltage and the grid driving voltage, and particularly when the direct current bus voltage is high, the junction temperature of the SiC MOSFET is rapidly increased due to huge power loss generated by short circuit, so that unrecoverable damage and thermal decay are caused. Taking an SiC MOSFET from England, Inc. as an example, the short circuit withstand time is plotted against the gate voltage and the DC bus voltage as shown in FIG. 1 at Vgs＝15V，VdcThe short-circuit withstand time in the case of 600V is 3us, and the short-circuit withstand time of the SiC MOSFET is shorter when the gate voltage and the dc bus voltage are higher.
Short-circuit protection is a key function of a driving circuit, at present, most short-circuit protection of the SiC MOSFET directly uses a short-circuit protection mode of an IGBT, and the existing short-circuit detection scheme of the SiC MOSFET mainly comprises the following steps:
1) desaturation detection, which requires setting a blanking time, typically has an on oscillation time of about 1 μ s, early desaturation detection causes false turn-off, and late desaturation detection causes higher possibility of device damage, and the turn-on voltage of the SiC MOSFET is more temperature dependent than the IGBT, which makes it very difficult to design the desaturation reference voltage.
2) And in the inductor/resistor current detection, a sampling resistor or a small inductor is connected in series with the source electrode to detect the drain current. While this method is accurate and fast, it adds extra power loss and is only suitable for short circuit protection of discrete components.
3) Gate voltage detection, which can detect hard switch faults but cannot detect load faults by detecting gate source voltage and gate charge according to the gate charge characteristics of a SiC MOSFET, also reduces detection accuracy when bus dc voltage is low.
Due to the low short circuit capability of SiC MOSFETs, a short circuit detection circuit with fast response speed is needed.
Disclosure of Invention
The present application is directed to solving, at least to some extent, one of the technical problems in the related art.
Therefore, a first object of the present invention is to provide a short-circuit detection circuit for a SiC MOSFET based on drain-source turn-on voltage integration, which has a high response speed, and improves the reliability of a power electronic system by accelerating a short-circuit protection operation as a dc bus voltage increases.
In order to achieve the above object, an embodiment of a first aspect of the present application provides a short circuit detection circuit for a SiC MOSFET based on drain-source turn-on voltage integration, including:
the primary side of a voltage transformer (PT) is connected in parallel with the drain electrode and the source electrode of the SiC MOSFET in the power electronic circuit;
one end of an integrating resistor (R) is connected with one end of the secondary side of the voltage transformer (PT), and the other end of the integrating resistor (R), one end of an integrating capacitor (C) and one end of a switching tube (S1) are connected with the inverting input end of the operational amplifier;
the other end of the secondary side of the voltage transformer (PT) is grounded with the non-inverting input end of the operational amplifier, the other end of the integrating capacitor (C) and the other end of the switching tube (S1) are connected with the output end of the operational amplifier, the output end of the operational amplifier is connected with the inverting input end of a comparator, and the non-inverting input end of the comparator is connected with a reference voltage.
The SiC MOSFET short circuit detection circuit based on drain-source conduction voltage integration is connected in parallel with the drain and the source of the SiC MOSFET in a power electronic circuit through the primary side of a voltage transformer (PT); one end of an integrating resistor (R) is connected with one end of the secondary side of a voltage transformer (PT), and the other end of the integrating resistor (R), one end of an integrating capacitor (C) and one end of a switching tube (S1) are connected with the inverting input end of the operational amplifier; the other end of the secondary side of the voltage transformer (PT) is grounded with the non-inverting input end of the operational amplifier, the other end of the integrating capacitor (C) and the other end of the switching tube (S1) are connected with the output end of the operational amplifier, the output end of the operational amplifier is connected with the inverting input end of the comparator, and the non-inverting input end of the comparator is connected with the reference voltage. Therefore, the short-circuit condition of the SiC MOSFET can be quickly detected and the short-circuit signal can be output, and the short-circuit protection action is quicker when the bus voltage is higher, so that the reliability of a power electronic system can be improved.
In one embodiment of the present application, a drain-source voltage of the SiC MOSFET is detected; integrating the drain-source voltage when the SiC MOSFET is switched on to obtain a voltage integral value; and if the voltage integral value is larger than the reference voltage, judging that the SiC MOSFET is short-circuited.
In one embodiment of the application, the drain-source voltage of the SiC MOSFET is detected by the voltage transformer (PT); wherein the voltage of the secondary side of the Potential Transformer (PT) is
Wherein N is1And N2Number of turns, u, of primary and secondary windings of a voltage transformer, respectivelyDSIs the drain-source voltage of the SiC MOSFET.
In one embodiment of the present application, the drain-source voltage is integrated by an inverse integration circuit to obtain a voltage integration value; wherein the inverting integration circuit comprises the operational amplifier, the integration resistor (R) and the integration capacitor (C), and the output voltage of the inverting integration circuit is
Wherein N is1And N2Number of turns, u, of primary and secondary windings of a voltage transformer, respectivelyDSIs the drain-source voltage of the SiC MOSFET.
In one embodiment of the present application, the comparator compares the output voltage of the inverting integration circuit with the reference voltage, and outputs a short-circuit protection signal.
In an embodiment of the present application, the SiC MOSFET short detection circuit further includes: the switch tube (S1) is connected in parallel to the two ends of the integrating capacitor (C), and the driving signal of the switch tube (S1) is opposite to the driving signal of the SiC MOSFET; controlling the switch tube (S1) to be switched off when the SiC MOSFET is switched on, and charging the integration capacitor (C); and controlling the switch tube (S1) to be conducted when the SiC MOSFET is switched off, and discharging the integral capacitor (C).
In an embodiment of the present application, the SiC MOSFET short detection circuit further includes: and latching the short-circuit protection signal, and taking the short-circuit protection signal as a driving signal of a turn-off circuit.
In an embodiment of the present application, the SiC MOSFET short detection circuit further includes: and controlling the short-circuit protection signal to control an enable input end of a driving chip of the SiC MOSFET and controlling to turn off the SiC MOSFET.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a graph of short circuit withstand time of an England SiC MOSFET as a function of gate voltage and DC bus voltage in accordance with an embodiment of the present application;
fig. 2 is a schematic structural diagram of a short-circuit detection circuit of a SiC MOSFET based on drain-source turn-on voltage integration according to a first embodiment of the present application;
FIG. 3 is a diagram of short-circuit voltage current waveforms under a hard-switching fault for an SiC MOSFET in an embodiment of the present application;
fig. 4 is a comparison diagram of simulation output waveforms of the short circuit detection circuit and the conventional desaturation detection circuit under the hard switch fault according to the embodiment of the present application;
fig. 5 is a comparison diagram of simulation output waveforms of the short circuit detection circuit and the conventional desaturation detection circuit under a load fault according to the embodiment of the present application.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application and should not be construed as limiting the present application.
A method, an apparatus, an electronic device, and a storage medium for predicting a drug review result according to embodiments of the present application are described below with reference to the accompanying drawings.
Fig. 2 is a schematic structural diagram of a short-circuit detection circuit of a SiC MOSFET based on drain-source turn-on voltage integration according to a first embodiment of the present application.
As shown in fig. 2, the structure of the SiC MOSFET short detection circuit based on drain-source turn-on voltage integration includes: the circuit comprises a voltage transformer (PT), an operational amplifier, an integrating resistor (R), an integrating capacitor (C), a switching tube (S1) and a comparator.
The primary side of a voltage transformer (PT) is connected in parallel with the drain electrode and the source electrode of the SiC MOSFET in the power electronic circuit; one end of an integrating resistor (R) is connected with one end of the secondary side of the voltage transformer (PT), and the other end of the integrating resistor (R), one end of an integrating capacitor (C) and one end of a switching tube (S1) are connected with the inverting input end of the operational amplifier; the other end of the secondary side of the voltage transformer (PT) is grounded with the non-inverting input end of the operational amplifier, the other end of the integrating capacitor (C) and the other end of the switching tube (S1) are connected with the output end of the operational amplifier, the output end of the operational amplifier is connected with the inverting input end of the comparator, and the non-inverting input end of the comparator is connected with the reference voltage.
In one embodiment of the present application, a drain-source voltage of the SiC MOSFET is detected; integrating the drain-source voltage when the SiC MOSFET is switched on to obtain a voltage integral value; and if the voltage integral value is larger than the reference voltage, judging that the SiC MOSFET is short-circuited.
In one embodiment of the application, the drain-source voltage when the SiC MOSFET is conducted is detected through a voltage transformer (PT); wherein the voltage of the secondary side of the Potential Transformer (PT) is
Wherein N is1And N2Number of turns, u, of primary and secondary windings of a voltage transformer, respectivelyDSIs the drain-source voltage of the SiC MOSFET.
In one embodiment of the application, a drain-source voltage is integrated through an inverse integration circuit to obtain a voltage integration value; wherein the inverting integration circuit comprises an operational amplifier, an integration resistor (R) and an integration capacitor (C), and the output voltage of the inverting integration circuit is
Wherein N is1And N2Number of turns, u, of primary and secondary windings of a voltage transformer, respectivelyDSIs the drain-source voltage of the SiC MOSFET.
In one embodiment of the present application, a comparator compares an output voltage of an inverting integration circuit with a reference voltage to output a short-circuit protection signal.
In one embodiment of the present application, the SiC MOSFET short detection circuit further includes: a switching tube (S1) is connected in parallel at two ends of the integrating capacitor (C), and the driving signal of the switching tube (S1) is in reverse phase with the driving signal of the SiC MOSFET; the control switch tube (S1) is turned off when the SiC MOSFET is turned on, and the integral capacitor (C) is charged; the control switch tube (S1) is turned on when the SiC MOSFET is turned off, and the integration capacitor (C) discharges.
In one embodiment of the present application, the SiC MOSFET short detection circuit further includes: and latching the short-circuit protection signal, and taking the short-circuit protection signal as a driving signal of the turn-off circuit.
In one embodiment of the present application, the SiC MOSFET short detection circuit further includes: and controlling the short-circuit protection signal to control the enable input end of a drive chip of the SiC MOSFET and control the SiC MOSFET to be switched off.
Specifically, as illustrated in conjunction with fig. 3, fig. 3 is a waveform diagram of short-circuit voltage current of SiC MOSFET under hard switching failure, as shown in fig. 3, and V can be seendsAlmost close to the DC bus voltage during short circuit, while the on-state voltage V of the SiC MOSFET is normal operatingds(on)Only a few volts, so Vds(on)The integration over time can be used as a signal for short-circuit protection, i.e. the area of the shaded part in fig. 1. When the integral value exceeds the reference value, a short-circuit signal is output, and the higher the voltage of the direct-current bus is, Vds(on)The faster the integrated value of (a) reaches the reference value.
The short circuit detection circuit according to the embodiment of the present invention is simulated and verified with reference to a specific embodiment.
In order to verify the effectiveness of the proposed short circuit detection circuit, the short circuit detection circuit was set up for simulation according to the simulation parameters in table 1 below.
TABLE 1
Comparing the simulation output waveforms of the proposed short circuit detection circuit and the traditional desaturation detection circuit under the hard switch fault and the load fault, the comparison results are respectively shown in fig. 4 and fig. 5, and it can be seen that under the two short circuit fault conditions, when the direct current bus voltages are respectively 200V, 400V, 600V, and 800V, the detection delay time of the proposed short circuit detection circuit is shorter than that of the traditional desaturation detection circuit, and the higher the direct current bus voltage is, the shorter the time required by the proposed short circuit detection circuit to output the short circuit signal is. The short circuit detection time under hard switch fault and load fault conditions was 187ns and 156ns, respectively, for a dc bus voltage of 800V. Therefore, the SiC MOSFET short-circuit detection circuit according to the embodiment of the present invention has a high response speed, and the time required for the short-circuit protection operation decreases as the bus voltage increases.
Thus, according to the short-circuit detection circuit of the embodiment of the present invention, the drain-source voltage V when the SiC MOSFET is turned on is detected in response to the short-circuit characteristic in which the short-circuit withstand time of the SiC MOSFET decreases as the dc bus voltage increasesds(on)The on-state voltage V of the SiC MOSFETds(on)Integrating time as a short-circuit protection signal, i.e. outputting a short-circuit signal when the integrated value exceeds a reference value, so that the higher the DC bus voltage, the shorter the timeThe more rapid the path protection action. In addition, the short-circuit protection signal is the on-state voltage V of the SiC MOSFETds(on)The integral value of the on-voltage generated by the SiC MOSFET under the normal working condition is much smaller than the integral value during short circuit, so that the probability of sending an error short-circuit signal by the short-circuit detection circuit is very small.
The SiC MOSFET short circuit detection circuit based on drain-source conduction voltage integration is connected in parallel with the drain and the source of the SiC MOSFET in a power electronic circuit through the primary side of a voltage transformer (PT); one end of an integrating resistor (R) is connected with one end of the secondary side of a voltage transformer (PT), and the other end of the integrating resistor (R), one end of an integrating capacitor (C) and one end of a switching tube (S1) are connected with the inverting input end of the operational amplifier; the other end of the secondary side of the voltage transformer (PT) is grounded with the non-inverting input end of the operational amplifier, the other end of the integrating capacitor (C) and the other end of the switching tube (S1) are connected with the output end of the operational amplifier, the output end of the operational amplifier is connected with the inverting input end of the comparator, and the non-inverting input end of the comparator is connected with the reference voltage. Therefore, the short-circuit condition of the SiC MOSFET can be quickly detected and the short-circuit signal can be output, and the short-circuit protection action is quicker when the bus voltage is higher, so that the reliability of a power electronic system can be improved.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc. Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (8)
1. A short circuit detection circuit of a SiC MOSFET based on drain-source turn-on voltage integration is characterized by comprising:
the primary side of a voltage transformer (PT) is connected in parallel with the drain electrode and the source electrode of the SiC MOSFET in the power electronic circuit;
one end of an integrating resistor (R) is connected with one end of the secondary side of the voltage transformer (PT), and the other end of the integrating resistor (R), one end of an integrating capacitor (C) and one end of a switching tube (S1) are connected with the inverting input end of the operational amplifier;
the other end of the secondary side of the voltage transformer (PT) is grounded with the non-inverting input end of the operational amplifier, the other end of the integrating capacitor (C) and the other end of the switching tube (S1) are connected with the output end of the operational amplifier, the output end of the operational amplifier is connected with the inverting input end of a comparator, and the non-inverting input end of the comparator is connected with a reference voltage.
2. The SiC MOSFET short detection circuit of claim 1, comprising:
detecting the drain-source voltage of the SiC MOSFET;
integrating the drain-source voltage when the SiC MOSFET is switched on to obtain a voltage integral value;
and if the voltage integral value is larger than the reference voltage, judging that the SiC MOSFET is short-circuited.
3. The SiC MOSFET short circuit detection circuit of claim 2,
detecting the drain-source voltage of the SiC MOSFET through the voltage transformer (PT); wherein the ratio of the input voltage and the output voltage of the voltage transformer (PT) is
Wherein N is1And N2Number of turns, u, of primary and secondary windings of a voltage transformer, respectivelyDSIs the drain-source voltage of the SiC MOSFET.
4. The SiC MOSFET short circuit detection circuit of claim 2,
integrating the drain-source voltage through an inverse integration circuit to obtain a voltage integral value;
wherein the inverting integration circuit comprises the operational amplifier, the integration resistor (R) and the integration capacitor (C), and the output voltage of the inverting integration circuit is
Wherein N is1And N2Number of turns, u, of primary and secondary windings of a voltage transformer, respectivelyDSIs the drain-source voltage of the SiC MOSFET.
5. The SiC MOSFET short detection circuit of claim 4, further comprising:
and the comparator compares the output voltage of the inverting integration circuit with the reference voltage and outputs a short-circuit protection signal.
6. The SiC MOSFET short detection circuit of claim 1, further comprising:
the switch tube (S1) is connected in parallel to the two ends of the integrating capacitor (C), and the driving signal of the switch tube (S1) is opposite to the driving signal of the SiC MOSFET;
controlling the switch tube (S1) to be switched off when the SiC MOSFET is switched on, and charging the integration capacitor (C);
and controlling the switch tube (S1) to be conducted when the SiC MOSFET is switched off, and discharging the integral capacitor (C).
7. The SiC MOSFET short detection circuit of claim 5, further comprising:
and latching the short-circuit protection signal, and taking the short-circuit protection signal as a driving signal of a turn-off circuit.
8. The SiC MOSFET short detection circuit of claim 7, further comprising:
and controlling the short-circuit protection signal to control an enable input end of a driving chip of the SiC MOSFET and controlling to turn off the SiC MOSFET.
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