CN112945307A - Double-parameter measuring method based on double-waveguide-cavity Fano resonance device - Google Patents
Double-parameter measuring method based on double-waveguide-cavity Fano resonance device Download PDFInfo
- Publication number
- CN112945307A CN112945307A CN202110167139.5A CN202110167139A CN112945307A CN 112945307 A CN112945307 A CN 112945307A CN 202110167139 A CN202110167139 A CN 202110167139A CN 112945307 A CN112945307 A CN 112945307A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- variation
- dual
- fano resonance
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 230000009977 dual effect Effects 0.000 claims abstract description 26
- 239000011159 matrix material Substances 0.000 claims abstract description 24
- 230000008859 change Effects 0.000 claims description 14
- 238000000691 measurement method Methods 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 238000010187 selection method Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 17
- 230000035945 sensitivity Effects 0.000 abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 101100006960 Caenorhabditis elegans let-2 gene Proteins 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a double-parameter measuring method based on a double-waveguide-cavity Fano resonance device, and aims to solve the problems of insufficient accuracy and sensitivity of double-parameter measurement in the prior art. It includes: obtaining asymmetric Fano resonance curves corresponding to different voltages by using a dual waveguide cavity Fano resonance device; obtaining the variation of the reflected light intensity under two preset incident angles based on the asymmetric Fano resonance curve; obtaining the refractive index variation and the thickness variation of the dual waveguide cavity Fano resonance device under different voltages in real time based on the dual parameter sensing inverse matrix and the reflected light intensity variation; the dual-waveguide-cavity Fano resonance device comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially connected, and the thickness of the first dielectric layer is smaller than that of the second dielectric layer. The invention can realize the real-time measurement of double parameters of the thickness and the refractive index of the waveguide, and has low measurement crosstalk and high sensitivity and accuracy.
Description
Technical Field
The invention relates to a double-parameter measurement method based on a double-waveguide-cavity Fano resonance device, and belongs to the technical field of waveguide sensing measurement.
Background
With the development of science and technology, the requirements on the sensor are higher and higher, more and more waveguides (surface plasmon resonance waveguide, double-sided metal-clad waveguide and the like) based on a resonance structure are widely applied to sensing measurement of parameters such as liquid concentration, temperature, thickness and the like, but most of the currently used waveguide structures are single-parameter sensing, and in actual use, simultaneous measurement of double parameters such as thickness, refractive index, temperature and the like is often required. In Optics Express 25(2017)12733-12742, luowei et al proposed a double-parameter measurement scheme of refractive index and temperature under a double-incident angle based on surface plasmon resonance peak, which realizes simultaneous measurement of refractive index and temperature, but the selected surface plasmon resonance peak has high left-right symmetry, is easy to generate large sensing crosstalk, and can realize double-parameter measurement only with TM polarized light, and the sensitivity needs to be improved.
Disclosure of Invention
In order to solve the problems of insufficient accuracy and sensitivity of double-parameter measurement in the prior art, the invention provides a double-parameter measurement method based on a double-waveguide-cavity Fano resonance device.
In order to solve the technical problems, the invention adopts the following technical means:
the invention provides a double-parameter measuring method based on a double-waveguide-cavity Fano resonance device, which comprises the following steps of:
obtaining asymmetric Fano resonance curves corresponding to different voltages by using a dual-waveguide-cavity Fano resonance device, wherein the dual-waveguide-cavity Fano resonance device comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially connected, and the thickness of the first dielectric layer is smaller than that of the second dielectric layer;
obtaining the reflection light intensity variation corresponding to each incident angle based on the asymmetric Fano resonance curve and the preset 2 incident angles;
and obtaining the refractive index variation and the thickness variation of the second medium layer of the dual-waveguide-cavity Fano resonance device under different voltages in real time based on the pre-constructed dual-parameter sensing inverse matrix and the reflection light intensity variation.
Furthermore, the first dielectric layer and the second dielectric layer are made of transparent materials, and the first metal layer, the second metal layer and the third metal layer are made of gold or silver.
Furthermore, the thickness range of the first dielectric layer is 1-50 μm, and the thickness range of the second dielectric layer is 0.3-1.5 mm.
Furthermore, the thickness of the first metal layer is 30-50 nm, the thickness of the second metal layer is 30-70 nm, and the thickness of the third metal layer is not less than 300 nm.
Further, the method for selecting the preset 2 incidence angles includes:
and obtaining an asymmetric Fano resonance curve without external voltage by using a dual waveguide cavity Fano resonance device, and selecting 1 incident angle on each of two sides of a resonance peak of the asymmetric Fano resonance curve without external voltage.
Further, let preset 2 incident angles be θ respectively1And theta2The construction method of the double-parameter sensing inverse matrix comprises the following steps:
calculating the refractive index variation and the thickness variation of the second medium layer under the external voltage U according to the electro-optic coefficient and the piezoelectric coefficient of the second medium layer of the double waveguide cavity Fano resonance device:
wherein,
representing the refractive index variation of the second dielectric layer under an applied voltage U, n4Denotes the refractive index, gamma, of the second dielectric layer in the absence of an applied voltage33Denotes the electro-optic coefficient, h, of the second dielectric layer4Representing the thickness of the second dielectric layer in the absence of an applied voltage,
represents the thickness variation of the second dielectric layer under the applied voltage U, d33Representing the piezoelectric coefficient of the second medium layer;
obtaining an asymmetric Fano resonance curve corresponding to an external voltage U by using a dual waveguide cavity Fano resonance device, and obtaining the variation of reflected light intensity corresponding to preset 2 incident angles;
based on the refractive index variation, the thickness variation and the reflected light intensity variation of the second medium layer under the external voltage U, fitting and calculating a double-parameter sensing matrix of the double-waveguide-cavity Fano resonance device:
wherein,
and
respectively represent theta under an applied voltage U1And theta2The amount of change in the corresponding reflected light intensity,
is a dual-parameter sensing matrix, S11Denotes theta1Corresponding toRatio of refractive index variation to reflected light intensity variation, S12Denotes theta1Ratio of the corresponding thickness variation to the reflected light intensity variation, S21Shows theta2Ratio of corresponding refractive index variation to reflected light intensity variation, S12Denotes theta2The ratio of the corresponding thickness variation to the reflected light intensity variation;
obtaining a double-parameter sensing inverse matrix according to the double-parameter sensing matrix:
and M is a double-parameter sensing inverse matrix of the double-waveguide-cavity Fano resonance device.
Further, the calculation formulas of the refractive index variation and the thickness variation of the second medium layer of the dual waveguide cavity Fano resonance device under different voltages are as follows:
wherein, Δ n4Represents the refractive index variation of the second dielectric layer at the current voltage, Δ h4Represents the thickness variation of the second dielectric layer at the current voltage, Δ R1And Δ R2Respectively representing the variation of the reflected light intensity corresponding to 2 incident angles under the current voltage.
The following advantages can be obtained by adopting the technical means:
the invention provides a double-parameter measuring method based on a double-waveguide-cavity Fano resonance device, which is characterized in that a Fano resonance curve is obtained by using the double-waveguide-cavity Fano resonance device, and because 2 dielectric layers in the double-waveguide-cavity Fano resonance device are thin and thick, an asymmetric and sharp Fano resonance curve can be generated by mutual coupling of a thin waveguide mode and a thick waveguide mode. Compared with the traditional single-parameter sensing measurement method, the method can measure double parameters simultaneously, and is simple to operate and high in practicability; compared with the existing double-parameter measurement method, the Fano resonance curve of the method has obvious asymmetry, so that the double-parameter measurement crosstalk of the method is low, the half-maximum and full-width of the Fano resonance peak of the method is small, the sensing sensitivity is high, and the measurement result is more accurate and reliable.
Drawings
FIG. 1 is a schematic structural diagram of a dual waveguide cavity Fano resonance device according to the present invention;
FIG. 2 is a graph of the reflectivity spectra of a thin waveguide for TE and TM polarizations in an embodiment of the present invention;
FIG. 3 is a graph of the reflectivity spectra for TE and TM polarizations for a thick waveguide in an embodiment of the present invention;
FIG. 4 is a diagram of the reflectivity spectra of the dual waveguide cavity Fano resonator for TE and TM polarizations in an embodiment of the present invention;
FIG. 5 is a flowchart of steps of a dual parameter measurement method based on a dual waveguide cavity Fano resonance device according to the present invention;
FIG. 6 is a graph of asymmetric Fano resonance at different voltages in an embodiment of the present invention;
FIG. 7 is a graph of reflected light intensity as a function of thickness and refractive index for an embodiment of the present invention;
in fig. 1, 1 is a first metal layer, 2 is a first dielectric layer, 3 is a second metal layer, 4 is a second dielectric layer, and 5 is a third metal layer.
Detailed Description
The technical scheme of the invention is further explained by combining the accompanying drawings as follows:
in order to improve the adaptability and sensitivity of the waveguide in sensing measurement, the invention provides a dual waveguide cavity Fano resonance device, as shown in fig. 1, when viewed from the incident light direction, the dual waveguide cavity Fano resonance device comprises a first metal layer 1, a first dielectric layer 2, a second metal layer 3, a second dielectric layer 4 and a third metal layer 5 which are connected in sequence, wherein the thickness of the first dielectric layer is smaller than that of the second dielectric layer. Structurally, the first metal layer, the first dielectric layer and the second metal layer form a first double-sided metal-clad waveguide, namely a thin waveguide; the second metal layer, the second dielectric layer and the third metal layer form a second double-sided metal-clad waveguide, namely a thick waveguide. The 2 waveguides can excite respective waveguide modes, and when the second metal layer is reduced to a proper thickness, the thin waveguide cavity and the waveguide modes excited by the thick waveguide cavity are mutually coupled and form Fano resonance.
In the double waveguide cavity Fano resonance device, the first dielectric layer and the second dielectric layer are made of transparent materials, and the first metal layer, the second metal layer and the third metal layer are made of gold or silver. The thickness range of the first metal layer is 30-50 nm, the thickness range of the second metal layer is 30-70 nm, and the thickness of the third metal layer is not less than 300 nm; the thickness range of the first dielectric layer is 1-50 μm, and the thickness range of the second dielectric layer is 0.3-1.5 mm.
The Fano resonance effect of the dual waveguide cavity Fano resonance device is verified through simulation experiments as follows:
in the simulation experiment of the embodiment of the invention, CaF is adopted as the first dielectric layer2The second dielectric layer is made of PMN-PT transparent ceramic, and the first, second and third metal layers are made of silver. The thickness of the first metal layer is h1Thickness of the first dielectric layer is h 40nm22.4 μm, the thickness of the second metal layer is h360nm, the thickness of the second dielectric layer is h40.5mm, the thickness of the third metal layer is h5300 nm. Through simulation calculation, the dielectric constant of silver can be deduced by using a Drude model, and when the wavelength of incident light is selected to be 632.8nm, the dielectric constant of silver is epsilon1＝ε3＝ε5＝-18+0.68i，CaF2Has a refractive index of n21.3, refractive index of PMN-PT transparent ceramic4＝2.62。
When light enters the thin waveguide after being incident to the dual-waveguide-cavity Fano resonance device, the guided mode of the thin waveguide is excited, the reflectivity of the TE and TM polarized light changes with the incident angle as shown in FIG. 2, and the reflectivity of the TE polarized light is theta'2The resonance peak value is highest at 17.875 DEG, and the TM polarized light is theta'5The highest is reached at 18.253 °. When the incident light is subjected to thick waveguide, it is thickThe guided mode of the waveguide is excited and the reflectivity of the TE and TM polarized light varies with the angle of incidence as shown in fig. 3, which shows that the excited ultra-high order guided mode is polarization insensitive due to the very thick second dielectric layer.
By combining the thin waveguide cavity and the thick waveguide cavity, the thickness of the intermediate silver layer is properly adjusted, the commonly excited waveguide modes are coupled with each other and form a Fano resonance phenomenon, and due to interaction between two different resonance peaks or interference between a discrete state and a continuous state, a very sharp and asymmetric Fano resonance curve can be generated, as shown in fig. 4, the Fano resonance curve generates 3 resonance valley peaks under TE and TM polarizations within the angle range of the dotted frame. For TE polarized light, the angle between 17.770 DEG and 18.080 DEG produces a narrow resonance peak (theta)1And theta3) And due to excitation of ultra-high order guided modes in thick waveguides, the angle of the broad resonance peak is 17.907 ° (θ)2) Excited by a guided mode in a thin waveguide; for TM polarized light, the angle produces a narrower resonance peak (θ) at 18.055 ° to 18.037 °4And theta6) The broad resonance peak is generated at 18.253 deg. (theta)5)。
As can be seen by comparing FIGS. 2, 3, and 4, the angle of the valley peak of the Fano resonance curve corresponds to the angle of the valley peak in the thin waveguide and the thick waveguide, respectively, such as the angle θ in FIG. 44And theta6Respectively corresponding to the angles theta 'in FIG. 3'4And theta'6Angle θ in fig. 42，θ5Respectively corresponding to the angles theta 'in FIG. 2'2，θ′5The interaction coupling of the two modes of fig. 2, 3 produces an asymmetric sharp resonance curve at the dashed box, i.e. Fano resonance.
According to the characteristic that the double-waveguide-cavity Fano resonance device can generate a very sharp and asymmetric Fano resonance curve, the invention also provides a double-parameter measurement method based on the double-waveguide-cavity Fano resonance device, voltage is applied between a second metal layer and a third metal layer of the double-waveguide-cavity Fano resonance device, and the function of parameter change in a sensitive sensing optical system is realized by using the asymmetry of the Fano resonance curve.
As shown in fig. 5, the dual parameter measurement method of the present invention specifically includes the following steps:
and obtaining an asymmetric Fano resonance curve without external voltage by using a dual waveguide cavity Fano resonance device, and selecting 1 incident angle on each of two sides of a resonance peak of the asymmetric Fano resonance curve without external voltage.
And 3, obtaining the refractive index variation and the thickness variation of the second medium layer of the dual waveguide cavity Fano resonance device under different voltages in real time based on the pre-constructed dual parameter sensing inverse matrix and the reflection light intensity variation.
(1) aiming at the thick waveguide composed of the second metal layer, the second dielectric layer and the third metal layer, when the waveguide layer is thick enough, a large number of guided modes can be generated, and under the condition of not considering the limitation of the thickness of the metal layer, the eigenequation of the guided mode can be obtained:
wherein, κ4Representing the wavevector of the second dielectric layer in a dual waveguide cavity Fano resonant device,
h4the thickness of the second dielectric layer when a voltage is applied is shown, m is the number of modes of the second dielectric layer, rho represents polarization, and alpha is k0(N2-ε4)1/2，k0Is the wave vector of the second medium layer in a vacuum state,
n is the effective refractive index of the guided mode,
ε4represents the dielectric constant of the second dielectric layer, beta is the propagation constant, delta beta is the perturbation of the propagation constant,
nairis the refractive index of air, and θ is the angle of incidence.
(2) Because the thickness of the waveguide layer in the waveguide of the present invention is in the order of sub-millimeter, thousands of modes can be accommodated in the waveguide layer, and an ultra-high order guided mode is generated. For the ultra-high order guided mode, in equation (6)
Much less than m pi, so the guided-mode eigenequation can be simplified as:
κ4h4＝mπ (8)
(3) the total differential is obtained by solving two sides of the formula (8):
Δκ4·h4+κ4·Δh4＝0 (9)
wherein,. DELTA.kappa.4Indicating the presence ofWave vector variation quantity delta h of second dielectric layer when voltage is applied4Represents the variation of the thickness of the second dielectric layer, Δ n, in the presence of an applied voltage4Representing the amount of change in the refractive index of the second dielectric layer in the presence of an applied voltage.
(4) The following formula (9), (10) is used to obtain:
(5) calculating the refractive index variation and the thickness variation of the second medium layer under the applied voltage U by using a formula (11) according to the electro-optic coefficient and the piezoelectric coefficient of the second medium layer of the double waveguide cavity Fano resonance device:
wherein,
representing the refractive index variation, gamma, of the second dielectric layer under an applied voltage U33The electro-optic coefficient of the second dielectric layer,
represents the thickness variation of the second dielectric layer under the applied voltage U, d33The piezoelectric coefficient of the second medium layer is shown.
(6) And obtaining an asymmetric Fano resonance curve corresponding to the applied voltage U by using the double-waveguide-cavity Fano resonance device, and obtaining the reflection light intensity variable quantity corresponding to the preset 2 incidence angles.
FIG. 6 is a graph of asymmetric Fano resonance at different voltages, where the solid line shows the asymmetric Fano resonance without applied voltage and the dotted line shows the asymmetric Fano resonance with applied voltage, as can be seen with applied voltageAfter compression, the reflection curve will shift. In the embodiment of the invention, a left edge incident angle (theta) is selected in the resonance range of the asymmetric Fano resonance curve110.00 deg. and a right edge angle of incidence (theta)210.28), obtaining the reflected light intensity corresponding to the two incident angles according to the asymmetric Fano resonance curve, and further calculating the variation of the reflected light intensity.
(7) Based on the refractive index variation, the thickness variation and the reflected light intensity variation of the second medium layer under the external voltage U, fitting and calculating a double-parameter sensing matrix of the double-waveguide-cavity Fano resonance device:
wherein,
and
respectively represent theta under an applied voltage U1And theta2The amount of change in the corresponding reflected light intensity,
is a dual-parameter sensing matrix, S11Denotes theta1Ratio of corresponding refractive index variation to reflected light intensity variation, S12Denotes theta1Ratio of the corresponding thickness variation to the reflected light intensity variation, S21Shows theta2Ratio of corresponding refractive index variation to reflected light intensity variation, S12Denotes theta2The ratio of the corresponding thickness variation to the reflected light intensity variation.
In the embodiment of the present invention, the fixed refractive index variation amount is Δ n — 5x10-5The thickness variation is delta h is 5nm, and theta is observed through a simulation experiment1And theta2The corresponding reflected light intensity is shown in the graph of the relationship of the change of the thickness and the refractive index, as shown in FIG. 7, and the reflected light intensity and the thickness, the reflected light intensity and the refraction can be seen from the graphThe refractive indexes are approximately in a linear relation, and a calculation formula of the double-parameter sensing matrix can be obtained according to the linear relation between the reflected light intensity and the thickness, the reflected light intensity and the refractive index and the formula (14):
wherein,
denotes θ under applied voltage U1The amount of change in the corresponding refractive index,
to represent
The amount of change in the corresponding reflected light intensity,
shows applied voltage θ2The amount of change in the corresponding refractive index,
to represent
The amount of change in the corresponding reflected light intensity,
represents applied voltage θ1The amount of the corresponding thickness variation,
to represent
The amount of change in the corresponding reflected light intensity,
denotes theta2Correspond toThe amount of change in the thickness of (a),
to represent
The corresponding reflected light intensity variation.
(8) Obtaining a double-parameter sensing inverse matrix according to the double-parameter sensing matrix:
and M is a double-parameter sensing inverse matrix of the double-waveguide-cavity Fano resonance device.
According to the double-parameter sensing inverse matrix and the reflected light intensity variation obtained in real time, the refractive index variation and the thickness variation of the second medium layer of the double-waveguide-cavity Fano resonance device under different voltages can be calculated, and the specific calculation formula is as follows:
wherein, Δ n4Represents the refractive index variation of the second dielectric layer at the current voltage, Δ h4Represents the thickness variation of the second dielectric layer at the current voltage, Δ R1And Δ R2Respectively representing the variation of the reflected light intensity corresponding to 2 incident angles under the current voltage.
Compared with the prior art, the double-waveguide-cavity Fano resonance device provided by the invention can generate a sharp and asymmetric Fano resonance curve, prism coupling is not needed, the layered structure can be miniaturized, TE and TM polarized incident light can be excited in an ultra-high-order waveguide mode, the full width at half maximum of a reflection peak valley is small, sensing sensitivity is high, a plurality of reflection peak valleys are provided, and the incident angle can be selected at will. The method can calculate the variation of the thickness and the refractive index in real time according to the variation of the reflected light intensity on the basis of the Fano resonance curve, and the Fano resonance peak generated by the method is asymmetric left and right, so that the method has the advantages of low double-parameter measurement crosstalk, high sensitivity, good measurement real-time performance and accuracy, and can be widely applied to the field of sensing measurement.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A double-parameter measurement method based on a double-waveguide-cavity Fano resonance device is characterized by comprising the following steps:
obtaining asymmetric Fano resonance curves corresponding to different voltages by using a dual-waveguide-cavity Fano resonance device, wherein the dual-waveguide-cavity Fano resonance device comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially connected, and the thickness of the first dielectric layer is smaller than that of the second dielectric layer;
obtaining the reflection light intensity variation corresponding to each incident angle based on the asymmetric Fano resonance curve and the preset 2 incident angles;
and obtaining the refractive index variation and the thickness variation of the second medium layer of the dual-waveguide-cavity Fano resonance device under different voltages in real time based on the pre-constructed dual-parameter sensing inverse matrix and the reflection light intensity variation.
2. The dual-parameter measurement method based on the dual-waveguide-cavity Fano resonance device as claimed in claim 1, wherein the first dielectric layer and the second dielectric layer are made of transparent materials, and the first metal layer, the second metal layer and the third metal layer are made of gold or silver.
3. The dual-parameter measurement method based on the dual-waveguide-cavity Fano resonance device as claimed in claim 1, wherein the thickness of the first dielectric layer is in a range of 1-50 μm, and the thickness of the second dielectric layer is in a range of 0.3-1.5 mm.
4. The dual parameter measurement method based on the dual waveguide cavity Fano resonance device as claimed in claim 1, wherein the thickness of the first metal layer is in the range of 30-50 nm, the thickness of the second metal layer is in the range of 30-70 nm, and the thickness of the third metal layer is not less than 300 nm.
5. The dual parameter measurement method based on the dual waveguide cavity Fano resonance device as claimed in claim 1, wherein the selection method of the preset 2 incident angles is:
and obtaining an asymmetric Fano resonance curve without external voltage by using a dual waveguide cavity Fano resonance device, and selecting 1 incident angle on each of two sides of a resonance peak of the asymmetric Fano resonance curve without external voltage.
6. The dual-parameter measurement method based on the dual-waveguide-cavity Fano resonance device as claimed in claim 1, wherein the preset 2 incident angles are respectively set as θ1And theta2The construction method of the double-parameter sensing inverse matrix comprises the following steps:
calculating the refractive index variation and the thickness variation of the second medium layer under the external voltage U according to the electro-optic coefficient and the piezoelectric coefficient of the second medium layer of the double waveguide cavity Fano resonance device:
wherein,
representing the refractive index variation of the second dielectric layer under an applied voltage U, n4Denotes the refractive index, gamma, of the second dielectric layer in the absence of an applied voltage33Denotes the electro-optic coefficient, h, of the second dielectric layer4Representing the thickness of the second dielectric layer in the absence of an applied voltage,
represents the thickness variation of the second dielectric layer under the applied voltage U, d33Representing the piezoelectric coefficient of the second medium layer;
obtaining an asymmetric Fano resonance curve corresponding to an external voltage U by using a dual waveguide cavity Fano resonance device, and obtaining the variation of reflected light intensity corresponding to preset 2 incident angles;
based on the refractive index variation, the thickness variation and the reflected light intensity variation of the second medium layer under the external voltage U, fitting and calculating a double-parameter sensing matrix of the double-waveguide-cavity Fano resonance device:
wherein,
and
respectively represent theta under an applied voltage U1And theta2The amount of change in the corresponding reflected light intensity,
is a dual-parameter sensing matrix, S11Denotes theta1Ratio of corresponding refractive index variation to reflected light intensity variation, S12Denotes theta1Ratio of the corresponding thickness variation to the reflected light intensity variation, S21Shows theta2Ratio of corresponding refractive index variation to reflected light intensity variation, S12Denotes theta2The ratio of the corresponding thickness variation to the reflected light intensity variation;
obtaining a double-parameter sensing inverse matrix according to the double-parameter sensing matrix:
and M is a double-parameter sensing inverse matrix of the double-waveguide-cavity Fano resonance device.
7. The dual-parameter measurement method based on the dual-waveguide-cavity Fano resonance device as claimed in claim 6, wherein the calculation formulas of the refractive index variation and the thickness variation of the second dielectric layer of the dual-waveguide-cavity Fano resonance device under different voltages are as follows:
wherein, Δ n4Represents the refractive index variation of the second dielectric layer at the current voltage, Δ h4Represents the thickness variation of the second dielectric layer at the current voltage, Δ R1And Δ R2Respectively representing the variation of the reflected light intensity corresponding to 2 incident angles under the current voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110167139.5A CN112945307B (en) | 2021-02-05 | 2021-02-05 | Double-parameter measuring method based on double-waveguide-cavity Fano resonance device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110167139.5A CN112945307B (en) | 2021-02-05 | 2021-02-05 | Double-parameter measuring method based on double-waveguide-cavity Fano resonance device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112945307A true CN112945307A (en) | 2021-06-11 |
| CN112945307B CN112945307B (en) | 2022-10-14 |
Family
ID=76243060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110167139.5A Expired - Fee Related CN112945307B (en) | 2021-02-05 | 2021-02-05 | Double-parameter measuring method based on double-waveguide-cavity Fano resonance device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112945307B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262073A (en) * | 2011-04-14 | 2011-11-30 | 北京航空航天大学 | Detection method capable of reducing background influence based on waveguide coupling surface plasma resonance |
| US20160033422A1 (en) * | 2014-07-30 | 2016-02-04 | B.G. Negev Technologies And Applications Ltd., At Ben-Gurion University | Fano resonance microwave spectroscopy of high absorption matter |
| CN107014782A (en) * | 2017-06-05 | 2017-08-04 | 南京信息工程大学 | A kind of coupling device and its application for fano resonance |
| CN207074169U (en) * | 2017-06-05 | 2018-03-06 | 南京信息工程大学 | A kind of coupling device and liquid sensor for fano resonance |
| CN207867069U (en) * | 2017-12-29 | 2018-09-14 | 广东工业大学 | A kind of spectrum regulation and control device with resonance cavity waveguide |
| CN109030415A (en) * | 2018-07-16 | 2018-12-18 | 南京邮电大学 | A kind of index sensor based on double Fano resonance |
| CN109444078A (en) * | 2019-01-14 | 2019-03-08 | 兰州理工大学 | Length scanning index sensor based on unsymmetrical metal cladding Medium Wave Guide |
| CN110261000A (en) * | 2019-08-01 | 2019-09-20 | 广西师范大学 | A kind of temperature sensor based on Fano resonance |
| CN209446465U (en) * | 2019-01-14 | 2019-09-27 | 兰州理工大学 | Length scanning index sensor based on unsymmetrical metal cladding Medium Wave Guide |
| CN110632034A (en) * | 2019-10-19 | 2019-12-31 | 中南林业科技大学 | Surface plasmon resonance sensor based on double-plane waveguide coupling |
| CN110823835A (en) * | 2019-12-16 | 2020-02-21 | 长沙学院 | Waveguide coupling long-range surface plasma resonance sensor and measuring method thereof |
-
2021
- 2021-02-05 CN CN202110167139.5A patent/CN112945307B/en not_active Expired - Fee Related
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262073A (en) * | 2011-04-14 | 2011-11-30 | 北京航空航天大学 | Detection method capable of reducing background influence based on waveguide coupling surface plasma resonance |
| US20160033422A1 (en) * | 2014-07-30 | 2016-02-04 | B.G. Negev Technologies And Applications Ltd., At Ben-Gurion University | Fano resonance microwave spectroscopy of high absorption matter |
| CN107014782A (en) * | 2017-06-05 | 2017-08-04 | 南京信息工程大学 | A kind of coupling device and its application for fano resonance |
| CN207074169U (en) * | 2017-06-05 | 2018-03-06 | 南京信息工程大学 | A kind of coupling device and liquid sensor for fano resonance |
| CN207867069U (en) * | 2017-12-29 | 2018-09-14 | 广东工业大学 | A kind of spectrum regulation and control device with resonance cavity waveguide |
| CN109030415A (en) * | 2018-07-16 | 2018-12-18 | 南京邮电大学 | A kind of index sensor based on double Fano resonance |
| CN109444078A (en) * | 2019-01-14 | 2019-03-08 | 兰州理工大学 | Length scanning index sensor based on unsymmetrical metal cladding Medium Wave Guide |
| CN209446465U (en) * | 2019-01-14 | 2019-09-27 | 兰州理工大学 | Length scanning index sensor based on unsymmetrical metal cladding Medium Wave Guide |
| CN110261000A (en) * | 2019-08-01 | 2019-09-20 | 广西师范大学 | A kind of temperature sensor based on Fano resonance |
| CN110632034A (en) * | 2019-10-19 | 2019-12-31 | 中南林业科技大学 | Surface plasmon resonance sensor based on double-plane waveguide coupling |
| CN110823835A (en) * | 2019-12-16 | 2020-02-21 | 长沙学院 | Waveguide coupling long-range surface plasma resonance sensor and measuring method thereof |
Non-Patent Citations (7)
Also Published As
| Publication number | Publication date |
|---|---|
| CN112945307B (en) | 2022-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10801956B2 (en) | Resonant periodic structures and methods of using them as filters and sensors | |
| Tian et al. | All-solid D-shaped photonic fiber sensor based on surface plasmon resonance | |
| CN107367488B (en) | Surface plasma resonance sensor substrate with adjustable formants | |
| CN108519352A (en) | A kind of index sensor based on metal-dielectric-metal waveguide bragg grating | |
| Brahmachari et al. | Effect of prism material on design of surface plasmon resonance sensor by admittance loci method | |
| Karasiński | Embossable grating couplers for planar evanescent wave sensors | |
| Bhatia et al. | Surface plasmon resonance based fiber optic refractive index sensor utilizing silicon layer: Effect of doping | |
| CN109655434B (en) | Optical fiber LMR sensor for multi-parameter measurement | |
| Yin et al. | Modulation of the sensing bandwidth of dual-channel SPR sensors by TiO2 film | |
| Qian et al. | Improving the sensitivity of guided-mode resonance sensors under oblique incidence condition | |
| CN112268873A (en) | Double-core-based double-side-polishing PCF-SPR sensor | |
| Du et al. | SPR label-free biosensor with oxide-metal-oxide-coated D-typed optical fiber: a theoretical study | |
| Ge et al. | Highly sensitive refractive index sensor based on Bloch surface waves with lithium niobate film | |
| Srivastava et al. | Highly accurate and sensitive surface plasmon resonance sensor based on channel photonic crystal waveguides | |
| Gryga et al. | Narrow Tamm resonances in one-dimensional photonic crystals employed in sensor applications | |
| CN113030003B (en) | Thickness multiplexing-based thin-layer broadband terahertz fingerprint trace detection sensor | |
| CN113418893B (en) | Ultra-sensitive refractive index optical biosensor based on sub-wavelength grating | |
| CN112945307B (en) | Double-parameter measuring method based on double-waveguide-cavity Fano resonance device | |
| CN103267742B (en) | Structure of coupled local surface plasma and waveguide mode | |
| CN113916839B (en) | Seawater temperature and salt sensor based on double guided mode resonance effect, and measuring system and method | |
| CN104458614B (en) | Accurate measuring method for extinction coefficient of low-absorption thin-film material | |
| JP5311852B2 (en) | Sensing device | |
| TAYA et al. | Slab waveguide sensor based on amplified phase change due to multiple total internal reflections | |
| Lévesque | Determination of thickness and optical constants of metal films from an extended ATR spectrum by using a statistical method | |
| Chu et al. | Surface plasmon resonance sensors using silica‐on‐silicon optical waveguides |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20221014 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |