CN112938987B - High-temperature phase change method for high-purity silicon dioxide - Google Patents
High-temperature phase change method for high-purity silicon dioxide Download PDFInfo
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- CN112938987B CN112938987B CN202110024396.3A CN202110024396A CN112938987B CN 112938987 B CN112938987 B CN 112938987B CN 202110024396 A CN202110024396 A CN 202110024396A CN 112938987 B CN112938987 B CN 112938987B
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- purity silicon
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 164
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 81
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 74
- 230000008859 change Effects 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 93
- 238000007599 discharging Methods 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 230000007246 mechanism Effects 0.000 claims description 25
- 230000005540 biological transmission Effects 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 238000005485 electric heating Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 description 3
- 239000006004 Quartz sand Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009347 mechanical transmission Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000011426 transformation method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Silicon Compounds (AREA)
Abstract
According to the high-temperature phase change method for the high-purity silicon dioxide, the furnace body is hinged to the base, so that the furnace body can be conveniently rotated, the inclination angle of the material containing pipe is adjusted, the high-purity silicon dioxide can be conveniently input into and output from the material containing pipe, meanwhile, when the heating pipe is used for heating Cheng Liaoguan, the material containing pipe can be driven to rotate through the rotating shaft, the high-purity silicon dioxide can be conveniently and rapidly heated uniformly, the high-purity silicon dioxide is prevented from being accumulated in the material containing pipe, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved; meanwhile, when Cheng Liaoguan rotates for heating, the spiral discharging plate blocks the high-purity silicon dioxide in Cheng Liaoguan, so that the high-purity silicon dioxide is prevented from being output outwards during heating, and the high-temperature phase change effect of the high-purity silicon dioxide is ensured. The method is reasonable in design and convenient to implement, and can be used for carrying out rapid and efficient high-temperature phase change treatment on the high-purity silicon dioxide by adjusting the inclination angle and the rotation direction of the material containing pipe, and the high-temperature phase change effect of the high-purity silicon dioxide can be ensured.
Description
Technical Field
The invention relates to the technical field of high-temperature phase change treatment of silicon dioxide, in particular to a high-temperature phase change method of high-purity silicon dioxide.
Background
At present, in the production process of high-purity silicon dioxide, in order to further remove impurities, the crystal structure of the silicon dioxide is changed, and high-temperature phase change treatment is required to be carried out on the high-purity silicon dioxide.
In the prior art, the high-temperature phase change treatment method for the silicon dioxide generally utilizes a high-temperature phase change furnace to carry out high-temperature phase change treatment on the high-purity silicon dioxide, but the existing high-temperature phase change furnace is generally vertical, and a furnace body is fixed, so that the high-purity silicon dioxide is easily accumulated and heated unevenly, and the conditions of long high-temperature phase change treatment time, low efficiency and poor effect are caused.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the high-temperature phase-change method for the high-purity silicon dioxide, which has reasonable design and convenient implementation and can carry out rapid and efficient high-temperature phase-change treatment on the high-purity silicon dioxide.
The technical problems to be solved by the invention are realized by the following technical proposal. The invention relates to a high-temperature phase change method of high-purity silicon dioxide, which uses a high-temperature phase change furnace to carry out high-temperature phase change treatment on the high-purity silicon dioxide, wherein the high-temperature phase change furnace comprises a base and a furnace body transversely hinged on the base; cheng Liaoguan is arranged in the furnace body in a rotating way, a plurality of heating pipes are arranged in the furnace body in the circumferential direction of the material containing pipe, and a spiral discharge plate is fixedly arranged in the discharge end of the material containing pipe; the method comprises the following steps:
(1) Starting the heating pipe, rotating the furnace body to enable the material containing pipe to be in an inclined state, wherein the discharge end of the material containing pipe is lower than the feed end of Cheng Liaoguan;
(2) Reverse rotation Cheng Liaoguan while adding high purity silica into Cheng Liaoguan;
(3) Rotating the furnace body to enable the material containing pipe to be in a horizontal state, continuously rotating the material containing pipe reversely, and carrying out high-temperature phase change treatment on the high-purity silicon dioxide;
(4) After 1h to 1.2h, the furnace body is rotated to enable the material containing pipe to be in an inclined state, the discharge end of the material containing pipe is lower than the feed end of Cheng Liaoguan, and then the furnace body is rotated Cheng Liaoguan positively, and high-purity silicon dioxide is output outwards by utilizing the spiral discharge plate;
(5) Reverse rotation Cheng Liaoguan while adding high purity silica into Cheng Liaoguan;
(6) The reciprocating circulation is performed in this way, so that the high-temperature phase change treatment of the high-purity silicon dioxide is realized.
The technical problem to be solved by the invention can be further solved by the following technical scheme, and for the high-temperature phase change method of high-purity silicon dioxide, the heating temperature of the heating pipe is 1100-1190 ℃.
The technical problem to be solved by the invention can be further solved by the following technical scheme, for the high-purity silicon dioxide high-temperature phase change method, a power mechanism for driving the furnace body to rotate is fixedly arranged on the base, a hinge shaft hinged with the base is arranged in the middle of the bottom of the furnace body, the power mechanism is fixedly arranged on the base at one side of the furnace body, and a roller matched with the furnace body is fixedly arranged at the output end of the power mechanism.
The technical problem to be solved by the invention can be further solved by the following technical scheme, and the power mechanism is a jack for the high-temperature phase change method of the high-purity silicon dioxide.
The technical problem to be solved by the invention can be further solved by the following technical scheme, for the high-purity silicon dioxide high-temperature phase transition method, one end of the material containing pipe extends to the outer side of the furnace body to be set as a feeding end, the other end of the material containing pipe extends to the outer side of the furnace body to be set as a discharging end, the diameter of the middle part of Cheng Liaoguan is larger than that of the feeding end and the discharging end, and conical transition parts are arranged between the middle part of Cheng Liaoguan and the feeding end and the discharging end.
The technical problem to be solved by the invention can be further solved by the following technical scheme, and for the high-temperature phase transition method of high-purity silicon dioxide, the number of the spiral discharging plates is 2, and the 2 spiral discharging plates are rotationally symmetrically arranged in the material containing pipe at the discharging end side.
The technical problem to be solved by the invention can be further solved by the following technical scheme, for the high-temperature phase transition method of high-purity silicon dioxide, the heating pipes are electric heating pipes, 6-8 electric heating pipes are arranged, and 6-8 electric heating pipes are uniformly arranged in the furnace body along the circumferential direction of the material containing pipe.
The technical problem to be solved by the invention can be further solved by the following technical scheme that for the high-purity silicon dioxide high-temperature phase change method, a rotating shaft for driving the material containing pipe to rotate is also arranged on the furnace body, two ends of the rotating shaft are respectively in transmission connection with two ends of the material containing pipe, and a driving mechanism for driving the rotating shaft to rotate is also fixedly arranged on the furnace body;
fixed wheels are fixedly arranged at two ends of the material containing pipe, 2 driving wheels matched with the fixed wheels at two ends of the material containing pipe are respectively arranged at two ends of the furnace body, and driving wheels in driving connection with the driving wheels at two ends of the furnace body are respectively and fixedly arranged at two ends of the rotating shaft
The technical problem to be solved by the invention can be further solved by the following technical scheme, for the high-purity silicon dioxide high-temperature phase change method, the driving mechanism is a driving motor, the driving motor is fixedly arranged on the furnace body, and an output shaft of the driving motor is in transmission connection with the rotating shaft.
Compared with the prior art, the furnace body is hinged on the base, so that the furnace body is convenient to rotate, the inclination angle of the material containing pipe is adjusted, high-purity silicon dioxide is conveniently input into and output from the material containing pipe, meanwhile, when the heating pipe is used for heating Cheng Liaoguan, the material containing pipe can be driven to rotate through the rotating shaft, so that the high-purity silicon dioxide is conveniently and rapidly heated uniformly, the high-purity silicon dioxide is prevented from accumulating in the material containing pipe, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved; secondly, install spiral flitch in the flourishing material pipe of discharge end, be convenient for carry out spiral ejection of compact to high-purity silica, simultaneously, when Cheng Liaoguan rotates the heating, spiral flitch stops the high-purity silica in Cheng Liaoguan, avoids high-purity silica to export outwards when heating, guarantees high-temperature phase transition effect of high-purity silica. The method is reasonable in design and convenient to implement, and can be used for carrying out rapid and efficient high-temperature phase change treatment on the high-purity silicon dioxide by adjusting the inclination angle and the rotation direction of the material containing pipe, and the high-temperature phase change effect of the high-purity silicon dioxide can be ensured.
Drawings
FIG. 1 is a schematic diagram of a high temperature phase change furnace used in the present invention;
fig. 2 is a schematic view of mechanical transmission of a material containing tube used in the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-2, a high-temperature phase transformation method of high-purity silicon dioxide, which uses a high-temperature phase transformation furnace to perform high-temperature phase transformation treatment on the high-purity silicon dioxide, wherein the high-temperature phase transformation furnace comprises a base 2 and a furnace body 1 transversely hinged on the base 2; a material containing pipe 3 is rotatably arranged in the furnace body 1, a plurality of heating pipes 4 are arranged in the furnace body 1 in the circumferential direction of the material containing pipe 3, one end of the material containing pipe 3 extends out of the furnace body 1 to be provided with a feeding end 5, the other end extends out of the furnace body 1 to be provided with a discharging end 6, and a spiral discharging plate 7 is fixedly arranged in the discharging end 6 of the material containing pipe 3; the furnace body 1 can rotate relative to the base 2, so that the inclination angle of the material containing pipe 3 can be conveniently adjusted, and the adjustment range of the inclination angle of the material containing pipe 3 is 10-20 degrees; the heating pipe 4 is used for heating the material containing pipe 3, so that the high-purity silicon dioxide is ensured to be heated uniformly and quickly; the spiral discharging plate 7 can perform spiral discharging on the material containing pipe 3 when rotating along with the material containing pipe 3 in the forward direction, and can prevent high-purity silicon dioxide in the material containing pipe 3 from being output outwards when rotating along with the material containing pipe 3 in the reverse direction;
the method comprises the following steps:
(1) The heating pipe 4 is started, the furnace body 1 is rotated, the material containing pipe 3 is in an inclined state, the discharge end 6 of the material containing pipe 3 is lower than the feed end 5 of the material containing pipe 3, so that high-purity silicon dioxide is conveniently added into the material containing pipe 3, and meanwhile, the high-purity silicon dioxide is uniformly distributed in the material containing pipe 3;
(2) The material containing pipe 3 is reversely rotated, high-purity silicon dioxide is added into the material containing pipe 3, and the high-purity silicon dioxide in the material containing pipe 3 is prevented from being output outwards during feeding by using the blocking of the spiral discharging plate 7;
(3) The furnace body 1 is rotated, so that the material containing pipe 3 is in a horizontal state, the material containing pipe 3 continues to reversely rotate, high-purity silicon dioxide is turned over, high-purity silicon dioxide is prevented from being accumulated in the material containing pipe 3, high-temperature phase change treatment is conveniently carried out on the high-purity silicon dioxide, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved;
(4) After 1h-1.2h, the furnace body 1 is rotated to enable the material containing pipe 3 to be in an inclined state, the discharge end 6 of the material containing pipe 3 is lower than the feed end 5 of the material containing pipe 3, then the material containing pipe 3 is rotated in the forward direction, and high-purity silicon dioxide is output outwards by utilizing the spiral discharge plate 7; in actual application, cheng Liaoguan 3 rotates for 1h in a horizontal state to finish high-temperature phase change of high-purity silicon dioxide, and when discharging, the material containing pipe 3 inclines and is matched with the spiral discharging plate 7, so that the discharging efficiency of the high-purity silicon dioxide is greatly improved;
(5) Reversely rotating the material containing pipe 3, and simultaneously adding high-purity silicon dioxide into the material containing pipe 3 to perform high-temperature phase change treatment again;
(6) The reciprocating circulation is performed in such a way, so that high-temperature phase change treatment of the high-purity silicon dioxide is realized, the high-efficiency is realized, and the effect is good.
In the method, the heating temperature of the heating pipe 4 is 1100-1190 ℃; the rotation speed of the material containing pipe 3 is 40-50 revolutions per minute.
The power mechanism 11 for driving the furnace body 1 to rotate is fixedly arranged on the base 2, the hinge shaft 10 hinged with the base 2 is arranged in the middle of the bottom of the furnace body 1, the power mechanism 11 is fixedly arranged on the base 2 on one side of the furnace body 1, and the idler wheels 12 matched with the furnace body 1 are fixedly arranged at the output end of the power mechanism 11. The arrangement of the hinge shaft 10 facilitates the relative rotation between the furnace body 1 and the base 2, thereby adjusting the inclination angle of the furnace body 1; the rollers 12 are arranged, so that the power mechanism 11 can conveniently support the furnace body 1 upwards, and the inclination angle of the furnace body 1 can be adjusted; the bottom of the furnace body 1 is provided with a rolling groove matched with the roller 12, so that the roller 12 can conveniently roll and support the furnace body 1.
The power mechanism 11 is a jack; preferably, the power mechanism 11 adopts a screw jack, so that manual hand operation is facilitated, the furnace body 1 is jacked up, and the inclination angle of the furnace body 1 is conveniently adjusted; a safety chain is fixedly connected between the furnace body 1 and the base 2 at the installation position of the power mechanism 11, so that the furnace body 1 is prevented from excessively inclining at the other side of the side where the power mechanism 11 is arranged; in actual use, the furnace body 1 is always inclined to one side of the power mechanism 11, and the furnace body 1 is kept in a horizontal state at most, so that the power mechanism 11 is arranged on the base 2 at the discharge end 6 side, and the feeding and discharging of the high-purity silicon dioxide are facilitated.
One end of the material containing pipe 3 extends to the outer side of the furnace body 1 to be set as a feeding end 5, the other end of the material containing pipe 3 extends to the outer side of the furnace body 1 to be set as a discharging end 6, the diameter of the middle part of the material containing pipe 3 is larger than the diameters of the feeding end 5 and the discharging end 6, and conical transition parts 13 are arranged between the middle part of the material containing pipe 3 and the feeding end 5 and between the middle part of the material containing pipe and the discharging end 6. The material containing pipe 3 is a transparent quartz pipe with a large middle part and small two ends, the middle part of the material containing pipe 3 is large, so that high-purity silicon dioxide is contained conveniently, the conical transition part 13 is arranged, the high-purity silicon dioxide is conveniently added from the feeding end 5 to the material containing pipe 3, and the high-purity silicon dioxide is conveniently output outwards from the discharging end 6.
The number of the spiral discharging plates 7 is 2, the 2 spiral discharging plates 7 are rotationally symmetrically arranged in the material containing pipe 3 at the side of the discharging end 6, and a discharging gap which is convenient for discharging high-purity silicon dioxide is reserved between the 2 spiral discharging plates 7; preferably, the 2 spiral discharging plates 7 are all clockwise spiral, when the material containing pipe 3 rotates clockwise, high-purity silicon dioxide can be output from the discharging gap, and when the material containing pipe 3 rotates anticlockwise, high-purity silicon dioxide is difficult to output from the discharging gap.
The heating pipes 4 are electric heating pipes 4, 6-8 electric heating pipes 4 are arranged, 6-8 electric heating pipes 4 are uniformly arranged in the furnace body 1 along the circumferential direction of the material containing pipe 3, so that the material containing pipe 3 is uniformly heated, high-purity quartz sand in the material containing pipe 3 is uniformly heated, and the high-temperature phase change treatment efficiency is improved.
A rotary shaft 8 for driving the material containing pipe 3 to rotate is also arranged on the furnace body 1, two ends of the rotary shaft 8 are respectively connected with two ends of the material containing pipe 3 in a transmission way, and a driving mechanism 9 for driving the rotary shaft 8 to rotate is also fixedly arranged on the furnace body 1; the driving mechanism 9 is used for driving the rotating shaft 8 to rotate, and then drives the material containing pipe 3 to rotate, so that Cheng Liaoguan is convenient for driving the high-purity silicon dioxide to carry out rotary heating, the high-purity silicon dioxide is heated more uniformly and rapidly, and further the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved.
Fixed wheels 14 are fixedly arranged at two ends of the material containing pipe 3, 2 driving wheels 15 matched with the fixed wheels 14 at two ends of the material containing pipe 3 are respectively arranged at two ends of the furnace body 1, and driving wheels 16 in transmission connection with the driving wheels 15 at two ends of the furnace body 1 are respectively and fixedly arranged at two ends of the rotating shaft 8. The middle parts of the driving wheels 15 at the two ends of the furnace body 1 are respectively provided with a driving groove matched with the fixed wheels 14, so that the fixed wheels 14 are supported and driven conveniently; the driving wheels 15 at two ends of the furnace body 1 are fixedly provided with connecting shafts 17, the connecting shafts 17 are arranged on the furnace body 1 through bearings and bearing blocks, the connecting shafts 17 are fixedly provided with transition wheels 18, the transition wheels 18 are in transmission connection with the driving wheels 16 through chains 19, and the driving wheels 16 conveniently drive the driving wheels 15, and further drive the fixed wheels 14 to rotate.
The driving mechanism 9 is a driving motor, the driving motor is fixedly arranged on the furnace body 1, and an output shaft of the driving motor is in transmission connection with the rotating shaft 8. The rotary shaft 8 is arranged on the furnace body 1 through a bearing and a bearing seat, a transmission gear is fixedly arranged on the rotary shaft 8, a driving gear meshed with the transmission gear is fixedly arranged on an output shaft of the driving motor, the driving motor is convenient to act, and the rotary shaft 8 is driven to rotate through the cooperation of the driving gear and the transmission gear.
Claims (1)
1. A high-temperature phase transition method of high-purity silicon dioxide is characterized in that: the method uses a high-temperature phase-change furnace to carry out high-temperature phase-change treatment on high-purity silicon dioxide, wherein the high-temperature phase-change furnace comprises a base and a furnace body transversely hinged on the base; cheng Liaoguan is arranged in the furnace body in a rotating way, a plurality of heating pipes are arranged in the furnace body in the circumferential direction of the material containing pipe, and a spiral discharge plate is fixedly arranged in the discharge end of the material containing pipe;
the power mechanism is fixedly arranged on the base and used for driving the furnace body to rotate, a hinge shaft hinged with the base is arranged in the middle of the bottom of the furnace body, the power mechanism is fixedly arranged on the base at one side of the furnace body, and a roller matched with the furnace body is fixedly arranged at the output end of the power mechanism;
one end of the material containing pipe extends to the outer side of the furnace body to be set as a feeding end, the other end of the material containing pipe extends to the outer side of the furnace body to be set as a discharging end, the diameter of the middle part of Cheng Liaoguan is larger than that of the feeding end and the discharging end, and conical transition parts are arranged between the middle part of Cheng Liaoguan and the feeding end and between the middle part of Cheng Liaoguan and the discharging end;
the power mechanism is a jack;
the number of the spiral discharging plates is 2, and the 2 spiral discharging plates are rotationally symmetrically arranged in the material containing pipe at the discharging end side;
the heating pipes are electric heating pipes, 6-8 electric heating pipes are arranged, and the 6-8 electric heating pipes are uniformly arranged in the furnace body along the circumferential direction of the material containing pipe;
the furnace body is also provided with a rotating shaft for driving the material containing pipe to rotate, two ends of the rotating shaft are respectively connected with two ends of the material containing pipe in a transmission way, and the furnace body is also fixedly provided with a driving mechanism for driving the rotating shaft to rotate;
fixed wheels are fixedly arranged at two ends of the material containing pipe, 2 driving wheels matched with the fixed wheels at two ends of the material containing pipe are respectively arranged at two ends of the furnace body, and driving wheels in transmission connection with the driving wheels at two ends of the furnace body are respectively and fixedly arranged at two ends of the rotating shaft;
the driving mechanism is a driving motor, the driving motor is fixedly arranged on the furnace body, and an output shaft of the driving motor is in transmission connection with the rotating shaft;
the method comprises the following steps:
(1) Starting the heating pipe, rotating the furnace body to enable the material containing pipe to be in an inclined state, wherein the discharge end of the material containing pipe is lower than the feed end of Cheng Liaoguan;
(2) Reverse rotation Cheng Liaoguan while adding high purity silica into Cheng Liaoguan;
(3) Rotating the furnace body to enable the material containing pipe to be in a horizontal state, continuously rotating the material containing pipe reversely, and carrying out high-temperature phase change treatment on the high-purity silicon dioxide;
(4) After 1h to 1.2h, the furnace body is rotated to enable the material containing pipe to be in an inclined state, the discharge end of the material containing pipe is lower than the feed end of Cheng Liaoguan, and then the furnace body is rotated Cheng Liaoguan positively, and high-purity silicon dioxide is output outwards by utilizing the spiral discharge plate;
(5) Reverse rotation Cheng Liaoguan while adding high purity silica into Cheng Liaoguan;
(6) The reciprocating circulation is performed in this way, so that high-temperature phase change treatment of the high-purity silicon dioxide is realized;
in the method, the heating temperature of the heating pipe is 1100-1190 ℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110024396.3A CN112938987B (en) | 2021-01-08 | 2021-01-08 | High-temperature phase change method for high-purity silicon dioxide |
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| CN202110024396.3A CN112938987B (en) | 2021-01-08 | 2021-01-08 | High-temperature phase change method for high-purity silicon dioxide |
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| CN112938987B true CN112938987B (en) | 2023-12-05 |
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| CN112938987A (en) | 2021-06-11 |
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