CN112938987A - High-temperature phase change method for high-purity silicon dioxide - Google Patents
High-temperature phase change method for high-purity silicon dioxide Download PDFInfo
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- CN112938987A CN112938987A CN202110024396.3A CN202110024396A CN112938987A CN 112938987 A CN112938987 A CN 112938987A CN 202110024396 A CN202110024396 A CN 202110024396A CN 112938987 A CN112938987 A CN 112938987A
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- material containing
- containing pipe
- furnace body
- silicon dioxide
- temperature phase
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 178
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 88
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 77
- 230000008859 change Effects 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 117
- 238000007599 discharging Methods 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 230000007246 mechanism Effects 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000005485 electric heating Methods 0.000 claims description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 239000006004 Quartz sand Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009347 mechanical transmission Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Silicon Compounds (AREA)
Abstract
A furnace body is hinged on a base, so that the furnace body can be conveniently rotated, the inclination angle of a material containing pipe is adjusted, the high-purity silicon dioxide can be conveniently input and output to the material containing pipe, meanwhile, when the material containing pipe is heated by a heating pipe, the material containing pipe can be driven to rotate by a rotating shaft, the high-purity silicon dioxide can be rapidly and uniformly heated, the high-purity silicon dioxide is prevented from being accumulated in the material containing pipe, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved; meanwhile, when the material containing pipe rotates for heating, the spiral discharging plate blocks the high-purity silicon dioxide in the material containing pipe, so that the high-purity silicon dioxide is prevented from being output outwards when being heated, and the high-temperature phase change effect of the high-purity silicon dioxide is ensured. The method has reasonable design and convenient implementation, can carry out quick and efficient high-temperature phase change treatment on the high-purity silicon dioxide by adjusting the inclination angle and the rotation direction of the material containing pipe, and can ensure the high-temperature phase change effect of the high-purity silicon dioxide.
Description
Technical Field
The invention relates to the technical field of high-temperature phase change treatment of silicon dioxide, in particular to a high-temperature phase change method of high-purity silicon dioxide.
Background
At present, in the production process of high-purity silicon dioxide, in order to further remove impurities and change the crystal structure of the silicon dioxide, high-temperature phase change treatment needs to be carried out on the high-purity silicon dioxide.
In the prior art, a phase change treatment method of silicon dioxide generally utilizes a high-temperature phase change furnace to perform high-temperature phase change treatment on high-purity silicon dioxide, but the existing high-temperature phase change furnace is generally vertical, furnace bodies are fixed, high-purity silicon dioxide is easy to accumulate and is heated unevenly, and therefore, the conditions of long high-temperature phase change treatment time, low efficiency and poor effect are caused.
Disclosure of Invention
The invention aims to solve the technical problem of providing a high-temperature phase change method of high-purity silicon dioxide, which is reasonable in design, convenient to implement and capable of performing high-temperature phase change treatment on the high-purity silicon dioxide quickly and efficiently, aiming at the defects of the prior art.
The technical problem to be solved by the present invention is achieved by the following technical means. The invention relates to a high-temperature phase change method of high-purity silicon dioxide, which uses a high-temperature phase change furnace to carry out high-temperature phase change treatment on the high-purity silicon dioxide, wherein the high-temperature phase change furnace comprises a base and a furnace body transversely hinged on the base; a material containing pipe is rotatably arranged in the furnace body, a plurality of heating pipes are arranged in the furnace body along the circumferential direction of the material containing pipe, and a spiral discharging plate is fixedly arranged in the discharging end of the material containing pipe; the method comprises the following steps:
(1) opening the heating pipe, rotating the furnace body to enable the material containing pipe to be in an inclined state, wherein the discharge end of the material containing pipe is lower than the feed end of the material containing pipe;
(2) reversely rotating the material containing pipe, and simultaneously adding high-purity silicon dioxide into the material containing pipe;
(3) rotating the furnace body to enable the material containing pipe to be in a horizontal state, and continuing to rotate the material containing pipe in a reverse direction to perform high-temperature phase change treatment on the high-purity silicon dioxide;
(4) after 1h to 1.2h, rotating the furnace body to enable the material containing pipe to be in an inclined state, wherein the discharge end of the material containing pipe is lower than the feed end of the material containing pipe, then rotating the material containing pipe forward, and outputting high-purity silicon dioxide outwards by utilizing a spiral discharge plate;
(5) reversely rotating the material containing pipe, and simultaneously adding high-purity silicon dioxide into the material containing pipe;
(6) the high-temperature phase change treatment of the high-purity silicon dioxide is realized by the reciprocating circulation.
The technical problem to be solved by the invention can be further realized by the following technical scheme that in the high-temperature phase change method of the high-purity silicon dioxide, the heating temperature of a heating pipe is 1100-1190 ℃.
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, a power mechanism for driving the furnace body to rotate is fixedly arranged on a base, a hinge shaft hinged with the base is arranged in the middle of the bottom of the furnace body, the power mechanism is fixedly arranged on the base on one side of the furnace body, and a roller matched with the furnace body is fixedly arranged at the output end of the power mechanism.
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, the power mechanism is a jack.
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, one end of the material containing pipe extends to the outer side of the furnace body to form a feeding end, the other end of the material containing pipe extends to the outer side of the furnace body to form a discharging end, the diameter of the middle part of the material containing pipe is larger than that of the feeding end and the discharging end, and conical transition parts are arranged among the middle part of the material containing pipe, the feeding end and the discharging end.
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, 2 spiral discharging plates are arranged, and the 2 spiral discharging plates are rotationally and symmetrically arranged in the material containing pipe at the side of the discharging end.
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, the heating pipe is an electric heating pipe, the electric heating pipe is provided with 6-8 electric heating pipes, and the 6-8 electric heating pipes are uniformly arranged in the furnace body along the circumferential direction of the material containing pipe.
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, a rotating shaft for driving a material containing pipe to rotate is further arranged on a furnace body, two ends of the rotating shaft are respectively in transmission connection with two ends of the material containing pipe, and a driving mechanism for driving the rotating shaft to rotate is further fixedly arranged on the furnace body;
fixed wheels are fixedly arranged at both ends of the material containing pipe, 2 driving wheels matched with the fixed wheels at both ends of the material containing pipe are respectively arranged at both ends of the furnace body, and driving wheels in transmission connection with the driving wheels at both ends of the furnace body are respectively and fixedly arranged at both ends of the rotating shaft
The technical problem to be solved by the invention can be further realized by the following technical scheme that for the high-temperature phase change method of the high-purity silicon dioxide, the driving mechanism is a driving motor, the driving motor is fixedly arranged on the furnace body, and an output shaft of the driving motor is in transmission connection with the rotating shaft.
Compared with the prior art, the furnace body is hinged on the base, so that the furnace body can be conveniently rotated, the inclination angle of the material containing pipe is adjusted, high-purity silicon dioxide can be conveniently input and output to the material containing pipe, meanwhile, when the material containing pipe is heated by the heating pipe, the material containing pipe can be driven to rotate by the rotating shaft, the high-purity silicon dioxide can be conveniently and uniformly heated, the high-purity silicon dioxide is prevented from being accumulated in the material containing pipe, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved; secondly, install the spiral in the flourishing charge pipe of discharge end and go out the flitch, be convenient for carry out the spiral ejection of compact to high-purity silica, simultaneously, when flourishing charge pipe rotates the heating, the spiral goes out the flitch and blocks the high-purity silica in the flourishing charge pipe, avoids high-purity silica outwards to export when the heating, guarantees high-purity silica's high temperature phase transition effect. The method has reasonable design and convenient implementation, can carry out quick and efficient high-temperature phase change treatment on the high-purity silicon dioxide by adjusting the inclination angle and the rotation direction of the material containing pipe, and can ensure the high-temperature phase change effect of the high-purity silicon dioxide.
Drawings
FIG. 1 is a schematic structural view of a high-temperature phase-change furnace used in the present invention;
fig. 2 is a schematic diagram of the mechanical transmission of the filling pipe used in the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, a high-temperature phase change method of high-purity silicon dioxide, the method uses a high-temperature phase change furnace to perform high-temperature phase change treatment on the high-purity silicon dioxide, the high-temperature phase change furnace comprises a base 2 and a furnace body 1 transversely hinged on the base 2; a material containing pipe 3 is rotatably arranged in the furnace body 1, a plurality of heating pipes 4 are arranged in the furnace body 1 at the circumferential direction of the material containing pipe 3, one end of the material containing pipe 3 extends out of the furnace body 1 and is set as a feeding end 5, the other end of the material containing pipe extends out of the furnace body 1 and is set as a discharging end 6, and a spiral discharging plate 7 is fixedly arranged in the discharging end 6 of the material containing pipe 3; the furnace body 1 can rotate relative to the base 2, so that the inclination angle of the material containing pipe 3 can be conveniently adjusted, and the adjustment range of the inclination angle of the material containing pipe 3 is 10-20 degrees; the heating pipe 4 is used for heating the material containing pipe 3, so that the high-purity silicon dioxide is uniformly and quickly heated; the spiral discharging plate 7 can spirally discharge the material containing pipe 3 when rotating along with the material containing pipe 3 in the forward direction, and can prevent high-purity silicon dioxide in the material containing pipe 3 from being output outwards when rotating along with the material containing pipe 3 in the reverse direction;
the method comprises the following steps:
(1) the heating pipe 4 is opened, the furnace body 1 is rotated, the material containing pipe 3 is in an inclined state, the discharge end 6 of the material containing pipe 3 is lower than the feed end 5 of the material containing pipe 3, so that high-purity silicon dioxide is conveniently added into the material containing pipe 3, and meanwhile, the high-purity silicon dioxide is uniformly distributed in the material containing pipe 3;
(2) the material containing pipe 3 is rotated reversely, high-purity silicon dioxide is added into the material containing pipe 3, and the high-purity silicon dioxide in the material containing pipe 3 is prevented from being output outwards when being added by the blocking of the spiral material discharging plate 7;
(3) the furnace body 1 is rotated to enable the material containing pipe 3 to be in a horizontal state, the material containing pipe 3 continues to rotate reversely, the high-purity silicon dioxide is turned over, the high-purity silicon dioxide is prevented from being accumulated in the material containing pipe 3, the high-temperature phase change treatment on the high-purity silicon dioxide is facilitated, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved;
(4) after 1h to 1.2h, rotating the furnace body 1 to enable the material containing pipe 3 to be in an inclined state, enabling the discharge end 6 of the material containing pipe 3 to be lower than the feed end 5 of the material containing pipe 3, then rotating the material containing pipe 3 in the forward direction, and outputting high-purity silicon dioxide outwards by utilizing the spiral discharge plate 7; in practical application, the material containing pipe 3 rotates for 1h in a horizontal state to complete high-temperature phase change of the high-purity silicon dioxide, and the material containing pipe 3 is inclined and matched with the spiral discharging plate 7 during discharging, so that the discharging efficiency of the high-purity silicon dioxide is greatly improved;
(5) reversely rotating the material containing pipe 3, simultaneously adding high-purity silicon dioxide into the material containing pipe 3, and carrying out high-temperature phase change treatment again;
(6) the high-temperature phase change treatment of the high-purity silicon dioxide is realized by the reciprocating circulation, so that the method is quick and efficient, and has a good effect.
In the method, the heating temperature of a heating pipe 4 is 1100-1190 ℃; the rotational speed of the filling pipe 3 is 40-50 revolutions per minute.
The furnace body comprises a base 2, a power mechanism 11 for driving the furnace body 1 to rotate is fixedly mounted on the base 2, a hinged shaft 10 hinged with the base 2 is mounted in the middle of the bottom of the furnace body 1, the power mechanism 11 is fixedly mounted on the base 2 on one side of the furnace body 1, and a roller 12 matched with the furnace body 1 is fixedly mounted at the output end of the power mechanism 11. The arrangement of the articulated shaft 10 is convenient for the relative rotation between the furnace body 1 and the base 2, thereby adjusting the inclination angle of the furnace body 1; the arrangement of the roller 12 is convenient for the power mechanism 11 to prop up the furnace body 1 upwards and adjust the inclination angle of the furnace body 1; the bottom of the furnace body 1 is provided with a rolling groove matched with the roller 12, so that the roller 12 can conveniently roll and support the furnace body 1.
The power mechanism 11 is a jack; preferably, the power mechanism 11 adopts a screw jack, so that manual operation is facilitated, the furnace body 1 is jacked upwards, and the inclination angle of the furnace body 1 is conveniently adjusted; a safety chain is fixedly connected between the furnace body 1 and the base 2 at the installation position of the power mechanism 11, so that the other side of the furnace body 1, which is inclined at the power mechanism 11, is prevented from excessively inclining; in practical use, the furnace body 1 always inclines towards one side of the power mechanism 11, and the furnace body 1 is kept in a horizontal state at most, so that the power mechanism 11 is arranged on the base 2 at the side of the discharge end 6, and the feeding and the discharging of the high-purity silicon dioxide are facilitated.
One end of the material containing pipe 3 extends to the outside of the furnace body 1 to form a feeding end 5, the other end of the material containing pipe 3 extends to the outside of the furnace body 1 to form a discharging end 6, the diameter of the middle part of the material containing pipe 3 is larger than the diameters of the feeding end 5 and the discharging end 6, and a conical transition part 13 is arranged between the middle part of the material containing pipe 3 and the feeding end 5 and between the material containing pipe 3 and the discharging end 6. The material containing pipe 3 is a transparent quartz pipe with a large middle part and small two ends, the middle part of the material containing pipe 3 is large, high-purity silicon dioxide can be contained conveniently, the conical transition part 13 is arranged, high-purity silicon dioxide can be conveniently added into the material containing pipe 3 from the feeding end 5, and the high-purity silicon dioxide can be conveniently output outwards from the discharging end 6.
2 spiral discharge plates 7 are arranged, the 2 spiral discharge plates 7 are rotationally and symmetrically arranged in the material containing pipe 3 at the side of the discharge end 6, and discharge gaps convenient for discharging high-purity silicon dioxide are reserved among the 2 spiral discharge plates 7; preferably, 2 spiral discharge plates 7 are clockwise spirals, and when containing pipe 3 rotates clockwise, high-purity silicon dioxide can be output from the discharge gap, and when containing pipe 3 rotates counterclockwise, high-purity silicon dioxide is difficult to output from the discharge gap.
The heating pipe 4 is an electric heating pipe 4, the number of the electric heating pipes 4 is 6-8, and the 6-8 electric heating pipes 4 are uniformly arranged in the furnace body 1 along the circumferential direction of the material containing pipe 3, so that the material containing pipe 3 can be uniformly heated, high-purity quartz sand in the material containing pipe 3 can be uniformly heated, and the high-temperature phase change treatment efficiency can be improved.
A rotating shaft 8 for driving the material containing pipe 3 to rotate is further installed on the furnace body 1, two ends of the rotating shaft 8 are in transmission connection with two ends of the material containing pipe 3 respectively, and a driving mechanism 9 for driving the rotating shaft 8 to rotate is further fixedly installed on the furnace body 1; the driving mechanism 9 is used for driving the rotating shaft 8 to rotate, so that the material containing pipe 3 is driven to rotate, the material containing pipe 3 is convenient to drive the high-purity silicon dioxide to carry out rotary heating, the high-purity silicon dioxide is heated more uniformly and rapidly, and the high-temperature phase change treatment efficiency of the high-purity silicon dioxide is improved.
Fixed wheels 14 are fixedly arranged at both ends of the material containing pipe 3, 2 driving wheels 15 matched with the fixed wheels 14 at both ends of the material containing pipe 3 are respectively arranged at both ends of the furnace body 1, and driving wheels 16 in transmission connection with the driving wheels 15 at both ends of the furnace body 1 are respectively fixedly arranged at both ends of the rotating shaft 8. The middle parts of the driving wheels 15 at the two ends of the furnace body 1 are respectively provided with a driving groove matched with the fixed wheel 14, so that the fixed wheel 14 can be conveniently supported and driven; the driving wheels 15 at the two ends of the furnace body 1 are both fixedly provided with connecting shafts 17, the connecting shafts 17 are arranged on the furnace body 1 through bearings and bearing seats, the connecting shafts 17 are both fixedly provided with transition wheels 18, the transition wheels 18 are in transmission connection with the driving wheels 16 through chains 19, so that the driving wheels 16 can drive the driving wheels 15, and further drive the fixed wheels 14 to rotate.
The driving mechanism 9 is a driving motor which is fixedly arranged on the furnace body 1, and an output shaft of the driving motor is in transmission connection with the rotating shaft 8. The rotating shaft 8 is arranged on the furnace body 1 through a bearing and a bearing seat, a transmission gear is fixedly arranged on the rotating shaft 8, a driving gear meshed with the transmission gear is fixedly arranged on an output shaft of the driving motor, the driving motor is convenient to act, and the rotating shaft 8 is driven to rotate through the matching of the driving gear and the transmission gear.
Claims (9)
1. A high-temperature phase transition method of high-purity silicon dioxide is characterized by comprising the following steps: the method uses a high-temperature phase change furnace to carry out high-temperature phase change treatment on high-purity silicon dioxide, wherein the high-temperature phase change furnace comprises a base and a furnace body transversely hinged on the base; a material containing pipe is rotatably arranged in the furnace body, a plurality of heating pipes are arranged in the furnace body along the circumferential direction of the material containing pipe, and a spiral discharging plate is fixedly arranged in the discharging end of the material containing pipe; the method comprises the following steps:
(1) opening the heating pipe, rotating the furnace body to enable the material containing pipe to be in an inclined state, wherein the discharge end of the material containing pipe is lower than the feed end of the material containing pipe;
(2) reversely rotating the material containing pipe, and simultaneously adding high-purity silicon dioxide into the material containing pipe;
(3) rotating the furnace body to enable the material containing pipe to be in a horizontal state, and continuing to rotate the material containing pipe in a reverse direction to perform high-temperature phase change treatment on the high-purity silicon dioxide;
(4) after 1h to 1.2h, rotating the furnace body to enable the material containing pipe to be in an inclined state, wherein the discharge end of the material containing pipe is lower than the feed end of the material containing pipe, then rotating the material containing pipe forward, and outputting high-purity silicon dioxide outwards by utilizing a spiral discharge plate;
(5) reversely rotating the material containing pipe, and simultaneously adding high-purity silicon dioxide into the material containing pipe;
(6) the high-temperature phase change treatment of the high-purity silicon dioxide is realized by the reciprocating circulation.
2. The high-temperature phase transition method of high-purity silica according to claim 1, wherein: in the method, the heating temperature of a heating pipe is 1100-1190 ℃.
3. The high-temperature phase transition method of high-purity silica according to claim 1, wherein: the furnace body rotating mechanism is fixedly arranged on the base, a hinged shaft hinged with the base is arranged in the middle of the bottom of the furnace body, the power mechanism is fixedly arranged on the base on one side of the furnace body, and idler wheels matched with the furnace body are fixedly arranged at the output end of the power mechanism.
4. The high-temperature phase transition method of high-purity silica according to claim 3, wherein: the power mechanism is a jack.
5. The high-temperature phase transition method of high-purity silica according to claim 1, wherein: one end of the material containing pipe extends to the outside of the furnace body to form a feeding end, the other end of the material containing pipe extends to the outside of the furnace body to form a discharging end, the diameter of the middle of the material containing pipe is larger than the diameters of the feeding end and the discharging end, and conical transition portions are arranged between the middle of the material containing pipe and the feeding end and between the middle of the material containing pipe and the discharging end.
6. The high-temperature phase transition method of high-purity silica according to claim 1, wherein: the spiral discharge plate is provided with 2, and 2 spiral discharge plates are arranged in the material containing pipes on the side of the discharge end in a rotational symmetry manner.
7. The high-temperature phase transition method of high-purity silica according to claim 1, wherein: the heating pipe is an electric heating pipe, the number of the electric heating pipes is 6-8, and the 6-8 electric heating pipes are uniformly arranged in the furnace body along the circumferential direction of the material containing pipe.
8. The high-temperature phase transition method of high-purity silica according to claim 1, wherein: the furnace body is also provided with a rotating shaft for driving the material containing pipe to rotate, two ends of the rotating shaft are respectively in transmission connection with two ends of the material containing pipe, and the furnace body is also fixedly provided with a driving mechanism for driving the rotating shaft to rotate;
the two ends of the material containing pipe are fixedly provided with fixed wheels, the two ends of the furnace body are respectively provided with 2 driving wheels matched with the fixed wheels at the two ends of the material containing pipe, and the two ends of the rotating shaft are respectively fixedly provided with driving wheels in transmission connection with the driving wheels at the two ends of the furnace body.
9. The high-temperature phase transition method of high-purity silica according to claim 8, wherein: the driving mechanism is a driving motor which is fixedly arranged on the furnace body, and an output shaft of the driving motor is in transmission connection with the rotating shaft.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110024396.3A CN112938987B (en) | 2021-01-08 | 2021-01-08 | High-temperature phase change method for high-purity silicon dioxide |
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| CN202110024396.3A CN112938987B (en) | 2021-01-08 | 2021-01-08 | High-temperature phase change method for high-purity silicon dioxide |
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| CN112938987B CN112938987B (en) | 2023-12-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115744919A (en) * | 2022-10-19 | 2023-03-07 | 苏州大学 | Preparation method of ultra-pure silicon dioxide particles |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200999205Y (en) * | 2006-12-30 | 2008-01-02 | 陈士斌 | Quartz sand high-heating calcining purification apparatus |
| CN101216246A (en) * | 2008-01-16 | 2008-07-09 | 西安近代化学研究所 | Revolving furnace |
| CN201203345Y (en) * | 2007-12-10 | 2009-03-04 | 无锡晶石新型能源有限公司 | Revolving kiln for calcining solid powder material |
| CN103754889A (en) * | 2014-02-25 | 2014-04-30 | 连云港市东海县宏伟石英制品有限公司 | High-purity quartz sand purification method and special rotating device |
| CN104764324A (en) * | 2015-04-02 | 2015-07-08 | 连云港神汇硅材料科技有限公司 | Silicon dioxide high-temperature phase-change furnace |
| CN206222904U (en) * | 2016-11-09 | 2017-06-06 | 江苏省晶瑞石英工业开发研究院有限公司 | A kind of nonmetallic ore tubular type calciner plant |
| CN206219223U (en) * | 2016-11-15 | 2017-06-06 | 连云港富泰新材料科技有限公司 | A kind of rotary high temp vacuum chlorination furnace |
| CN211041841U (en) * | 2019-07-24 | 2020-07-17 | 新疆博蓝科精细化工有限公司 | Rotatable high-temperature tube furnace |
| CN111889031A (en) * | 2020-07-29 | 2020-11-06 | 常州华芯装备工程有限公司 | Production device for preparing SiO powder |
-
2021
- 2021-01-08 CN CN202110024396.3A patent/CN112938987B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200999205Y (en) * | 2006-12-30 | 2008-01-02 | 陈士斌 | Quartz sand high-heating calcining purification apparatus |
| CN201203345Y (en) * | 2007-12-10 | 2009-03-04 | 无锡晶石新型能源有限公司 | Revolving kiln for calcining solid powder material |
| CN101216246A (en) * | 2008-01-16 | 2008-07-09 | 西安近代化学研究所 | Revolving furnace |
| CN103754889A (en) * | 2014-02-25 | 2014-04-30 | 连云港市东海县宏伟石英制品有限公司 | High-purity quartz sand purification method and special rotating device |
| CN104764324A (en) * | 2015-04-02 | 2015-07-08 | 连云港神汇硅材料科技有限公司 | Silicon dioxide high-temperature phase-change furnace |
| CN206222904U (en) * | 2016-11-09 | 2017-06-06 | 江苏省晶瑞石英工业开发研究院有限公司 | A kind of nonmetallic ore tubular type calciner plant |
| CN206219223U (en) * | 2016-11-15 | 2017-06-06 | 连云港富泰新材料科技有限公司 | A kind of rotary high temp vacuum chlorination furnace |
| CN211041841U (en) * | 2019-07-24 | 2020-07-17 | 新疆博蓝科精细化工有限公司 | Rotatable high-temperature tube furnace |
| CN111889031A (en) * | 2020-07-29 | 2020-11-06 | 常州华芯装备工程有限公司 | Production device for preparing SiO powder |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115744919A (en) * | 2022-10-19 | 2023-03-07 | 苏州大学 | Preparation method of ultra-pure silicon dioxide particles |
| CN115744919B (en) * | 2022-10-19 | 2024-02-09 | 苏州大学 | Preparation method of ultra-high purity silicon dioxide particles |
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| CN112938987B (en) | 2023-12-05 |
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