CN112928173A - Photosensitive sensor, manufacturing method of photosensitive sensor and display panel - Google Patents

Photosensitive sensor, manufacturing method of photosensitive sensor and display panel Download PDF

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Publication number
CN112928173A
CN112928173A CN202110145702.9A CN202110145702A CN112928173A CN 112928173 A CN112928173 A CN 112928173A CN 202110145702 A CN202110145702 A CN 202110145702A CN 112928173 A CN112928173 A CN 112928173A
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China
Prior art keywords
layer
substrate
photosensitive
photosensitive layer
light
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CN202110145702.9A
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Chinese (zh)
Inventor
宋继越
艾飞
龚帆
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN202110145702.9A priority Critical patent/CN112928173A/en
Publication of CN112928173A publication Critical patent/CN112928173A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application provides a photosensitive sensor, a manufacturing method of the photosensitive sensor and a display panel. The photosensitive sensor includes a substrate; the photosensitive layer is arranged on one side of the substrate and provided with a plurality of grooves, the inner surfaces of the grooves are provided with microstructures, and the microstructures are used for reflecting light rays in the grooves. When the light vertically enters the photosensitive sensor, the light is reflected for multiple times in the photosensitive layer, so that the absorptivity of the light in the photosensitive layer is improved, and the sensitivity of the photosensitive sensor is further improved.

Description

Photosensitive sensor, manufacturing method of photosensitive sensor and display panel
Technical Field
The application relates to the field of display, in particular to a photosensitive sensor, a manufacturing method of the photosensitive sensor and a display panel.
Background
With the improvement of the requirements of people on living quality, functions of fingerprint identification, ambient light induction, distance induction and the like are continuously developed and integrated into electronic products such as mobile phones, flat panels, watches and the like. All of the above functions require a light sensor (sensor) that can convert an external optical signal into an electrical signal for identification. But the sensitivity of the current photosensitive sensors is low.
Disclosure of Invention
The application provides a photosensitive sensor, a manufacturing method of the photosensitive sensor and a display panel, and sensitivity of the photosensitive sensor is improved.
The application provides a light-sensitive sensor, includes:
a substrate;
the photosensitive layer is arranged on one side of the substrate and provided with a plurality of grooves, the inner surfaces of the grooves are provided with microstructures, and the microstructures are used for reflecting light rays in the grooves.
In an embodiment of the present application, a ratio of a depth of the groove to a thickness of the photosensitive layer is 1: 3.
in an embodiment of the present application, the photosensitive layer includes an N-type amorphous silicon semiconductor layer and an intrinsic amorphous silicon semiconductor layer which are sequentially stacked on the substrate.
In an embodiment of the present application, an orthographic projection of the intrinsic amorphous silicon semiconductor layer on the substrate coincides with an orthographic projection of the N-type amorphous silicon semiconductor layer on the substrate along a direction in which light is incident.
In an embodiment of the present application, the N-type amorphous silicon semiconductor layer is doped with phosphine.
In an embodiment of the present application, the photosensitive sensor further includes:
a first electrode layer disposed between the substrate and the photosensitive layer; and
a first insulating layer disposed on the first electrode layer, the first insulating layer having a first opening to expose the first electrode layer.
In an embodiment of the present application, the photosensitive layer is disposed in the first opening, and an area of the photosensitive layer is larger than an area of the first opening.
In an embodiment of the present application, the photosensitive sensor further includes:
a second insulating layer disposed on the photosensitive layer and the first insulating layer, the second insulating layer having a second opening to expose the photosensitive layer; and
a second electrode layer covering the photosensitive layer and the second insulating layer.
Correspondingly, the application provides a manufacturing method of the photosensitive sensor, which comprises the following steps:
providing a substrate;
forming a photosensitive layer on one side of the substrate;
forming a groove in the photosensitive layer;
and forming a microstructure on the inner surface of the groove.
Correspondingly, the application provides a display panel, including thin film transistor layer, luminous functional layer and the film encapsulation layer of range upon range of setting in proper order on the substrate base plate, its characterized in that still includes as before the photosensor.
In an embodiment of the present application, the source drain metal layer of the thin film transistor and the first electrode layer of the photosensor are disposed on the same layer.
The application provides a photosensitive sensor, comprising a substrate; the photosensitive layer is arranged on one side of the substrate and provided with a plurality of grooves, the inner surfaces of the grooves are provided with microstructures, and the microstructures are used for reflecting light rays in the grooves. When the light vertically enters the photosensitive sensor, the light is reflected for multiple times in the photosensitive layer, so that the absorptivity of the light in the photosensitive layer is improved, and the sensitivity of the photosensitive sensor is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description are only some embodiments of the present application. Other embodiments obtained by those skilled in the art based on the embodiments of the present application without inventive efforts shall fall within the scope of the present application.
Fig. 1 is a schematic structural diagram of an embodiment of a photosensor provided in the present application.
Fig. 2 is a flowchart of a method for manufacturing a photosensor according to the present application.
Fig. 3a to 3h are schematic diagrams illustrating a method for manufacturing a photosensor according to the present application.
Fig. 4 is a schematic structural diagram of a display panel provided in the present application.
Fig. 5 is a schematic plan view of a display device provided in the present application.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which are included to illustrate specific embodiments that can be implemented by the application. In the drawings, elements having similar structures are denoted by the same reference numerals.
The present application will be described in detail with reference to specific examples.
Referring to fig. 1, a photosensor 10 includes a substrate 11 and a photosensitive layer 12. The photosensitive layer 12 is disposed on one side of the substrate 11. The photosensitive layer 12 has a plurality of recesses 13. The inner surface of the groove 13 has a microstructure 14. The microstructures 14 are used for reflecting light rays 20 in the grooves 13.
This application is through setting up recess 13 in photosensitive layer 12 to set up micro-structure 14 in recess 13, when light 20 shines photosensitive sensor 10 perpendicularly, light 20 can carry out multiple reflection in photosensitive layer 12, has improved the absorptivity of light 20 in photosensitive layer 12, and then has improved photosensitive sensor 10's sensitivity. The photosensor 10 may be used for optical fingerprint recognition within a Liquid Crystal Display (LCD) screen or under an Organic Light Emitting Diode (OLED) Display screen.
The ratio of the depth of the groove 13 to the thickness of the photosensitive layer 12 is 1: 3. the photosensitive layer 12 may have a thickness of 300 nm to 1000 nm. Specifically, the photosensitive layer 12 may have a thickness of 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, or 900 nm.
The present application sets the ratio of the depth of the groove 13 to the thickness of the photosensitive layer 12 to 1: 3, when the light 20 vertically irradiates the photosensitive sensor 10, the light 20 can be reflected in the photosensitive layer 12 for multiple times, which improves the absorption rate of the light 20 in the photosensitive layer 12, and thus improves the sensitivity of the photosensitive sensor 10.
The photosensitive layer 12 includes an N-type amorphous silicon semiconductor layer 121 and an intrinsic amorphous silicon semiconductor layer 122, which are sequentially stacked on the substrate 11.
An orthographic projection of the intrinsic amorphous silicon semiconductor layer 122 on the substrate 11 coincides with an orthographic projection of the N-type amorphous silicon semiconductor layer 121 on the substrate 11 along the direction in which the light ray 20 is incident.
This application sets up N type amorphous silicon semiconductor layer 121 and intrinsic amorphous silicon semiconductor layer 122 through range upon range of in proper order on base plate 11, and along the direction of light incidence, and the orthographic projection of intrinsic amorphous silicon semiconductor layer 122 coincides with the orthographic projection of N type amorphous silicon semiconductor layer 121, can further improve photosensor 10's aperture ratio.
The N-type amorphous silicon semiconductor layer 121 is doped with phosphine.
The photosensitive layer of a conventional amorphous silicon (a-Si) PIN photosensor includes a P-type semiconductor layer, an N-type semiconductor layer, and an intrinsic semiconductor layer. The conversion from the N-type amorphous silicon semiconductor to the P-type amorphous silicon semiconductor is realized by doping phosphine in the N-type amorphous silicon semiconductor layer 121. This application has prepared N type amorphous silicon semiconductor layer and P type amorphous silicon semiconductor layer simultaneously, has saved traditional P type amorphous silicon semiconductor layer, is guaranteeing that photosensitive layer 12 can absorb light 20 and produce electron-hole pair, also is that photosensitive sensor 10 can realize having reduced photosensitive sensor 10's thickness under the prerequisite of light signal conversion for the electrical signal that can directly read.
The light sensitive sensor 10 further comprises a first electrode layer 15 and a first insulating layer 16. The first electrode layer 15 is disposed between the substrate 11 and the photosensitive layer 12. The first insulating layer 16 is disposed on the first electrode layer 15. The first insulating layer 16 has a first opening 161 to expose the first electrode layer 15.
The first electrode layer 15 may be formed of a material having good conductivity, such as molybdenum (Mo), aluminum (Al), copper (Cu), a molybdenum-aluminum laminated alloy (Mo/Al/Mo), or a titanium-aluminum laminated alloy (Ti/Al/Ti). The first electrode layer 15 is a non-light-transmitting electrode, and can prevent light from a backlight and prevent light from entering the backlightThe first electrode 15 serves as a Light Shield ((Light Shield, LS) and the first electrode 15 serves as both a conductive electrode and a Light Shield, thereby eliminating the Light Shield in the conventional photosensor and reducing the thickness of the photosensor 10. in addition, the first electrode layer 15 shields the photosensitive layer 12 from the Light emitted from the device itself and improves the sensitivity of the photosensor 10. the first insulating layer 16 may be made of silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) And silicon oxide/silicon nitride (SiO)x/SiNx) Etc. of an insulating material.
The photosensitive layer 12 is disposed in the first opening 161. The photosensitive layer 12 has an area larger than that of the first opening 161.
The photosensitive layer 12 is disposed in the first opening 161 exposing the first electrode layer 15. The first electrode layer 15 is an opaque electrode, and can block the influence of the light emitted from the device itself on the photosensitive layer 12, thereby improving the sensitivity of the photosensitive sensor 10.
The photosensor 10 further includes a second insulating layer 17 and a second electrode layer 18. The second insulating layer 17 is disposed on the photosensitive layer 12 and the first insulating layer 16, and the second insulating layer 17 has a second opening 171 to expose the photosensitive layer 12.
The second insulating layer 17 may be made of silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) And silicon oxide/silicon nitride (SiO)x/SiNx) Etc. of an insulating material. The second electrode layer 18 may be formed of Indium Tin Oxide (ITO). The second electrode layer 18 is a transparent electrode, which is beneficial for the light 20 to be absorbed by the photosensitive layer 12 through the second electrode layer 18, so as to improve the sensitivity of the photosensitive sensor 10.
Referring to fig. 2 and 3a-3h, the present application also provides a method for manufacturing a photosensor, including:
step B101: a substrate 11 is provided.
The substrate 11 may be a thin film transistor array substrate.
Step B102: a photosensitive layer 12 is formed on the substrate 11 side.
Referring to fig. 3a-3c, in one embodiment, before step B102, the following steps may be further included: forming a first electrode layer 15 on one side of the substrate 11, and patterning the first electrode layer 15; a first insulating layer 16 is formed on the first electrode layer 15, and the first insulating layer 16 is patterned to form a first opening 161 to expose the first electrode layer 15.
Referring to fig. 3d, the photosensitive layer 12 is disposed in the first opening 161. The photosensitive layer 12 has an area larger than that of the first opening 161.
The first electrode layer 15 may be formed of a material having good conductivity, such as molybdenum (Mo), aluminum (Al), copper (Cu), a molybdenum-aluminum laminated alloy (Mo/Al/Mo), or a titanium-aluminum laminated alloy (Ti/Al/Ti). The first insulating layer 16 may be made of silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) And silicon oxide/silicon nitride (SiO)x/SiNx) Etc. of an insulating material. The photosensitive layer 12 includes an N-type amorphous silicon semiconductor layer 121 and an intrinsic amorphous silicon semiconductor layer 122, which are sequentially stacked on one side of the substrate 11. Wherein, along the incident direction of the light, the orthographic projection of the intrinsic amorphous silicon semiconductor layer 122 on the substrate 11 coincides with the orthographic projection of the N-type amorphous silicon semiconductor layer 121 on the substrate 11. In this case, phosphine gas is introduced to dope the N-type amorphous silicon semiconductor layer 121 formed on the substrate 11. The conversion from the N-type amorphous silicon semiconductor to the P-type amorphous silicon semiconductor is realized by doping phosphine in the N-type amorphous silicon semiconductor layer 121.
Step B103: a recess 13 is formed in the photosensitive layer 12.
Referring to fig. 3e, in an embodiment, before step B103, the following steps may be further included: a second insulating layer 17 is formed on the photosensitive layer 12 and the first insulating layer 16, and the second insulating layer 17 is patterned to form a second opening 171 to expose the photosensitive layer 12. The second insulating layer 17 may be made of silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) And silicon oxide/silicon nitride (SiO)x/SiNx) Etc. of an insulating material.
Referring to fig. 3f, specifically, the photosensitive layer 12 is patterned to form a groove 13. The ratio of the depth of the groove 13 to the thickness of the photosensitive layer 12 is 1: 3. the photosensitive layer 12 may have a thickness of 300 nm to 1000 nm. Specifically, the photosensitive layer 12 may have a thickness of 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, or 900 nm.
Step B104: microstructures 14 are formed on the inner surface of the groove 13.
Referring to FIG. 3g, in particular, the laser energy with a wavelength of 800 nm is 1MJ/mm2-5MJ/mm2And irradiating the groove 13 with 5-10 pulses of laser to form a microstructure 14 on the inner surface of the groove 13. The microstructures 14 can make the light 20 reflect in the grooves 13 for multiple times, so that the absorptivity of the photosensitive layer 12 to the light 20 is increased, and the sensitivity of the photosensitive sensor 10 is improved.
Referring to fig. 3h, in an embodiment, after step B104, the following steps may be further included: a second electrode layer 18 is formed on the photosensitive layer 12 and the second insulating layer 16, and the second electrode layer 18 may be formed of Indium Tin Oxide (ITO).
Referring to fig. 4, the present application further provides a display panel 100, which includes a thin film transistor layer 40, a light-emitting functional layer 50, and a thin film encapsulation layer 60 sequentially stacked on a substrate 30, and further includes the light sensor 10 according to any of the embodiments described above.
In one embodiment, the source-drain metal layer 41 of the thin film transistor 40 is disposed in the same layer as the first electrode layer 15 of the photosensor 10.
The source-drain metal layer 41 of the thin film transistor 40 and the first electrode layer 15 of the photosensor 10 are disposed on the same layer, which can simplify the manufacturing process of the display panel 100.
Referring to fig. 5, the present application further provides a display device 1000, and the display device 1000 includes the display panel 100 according to any of the embodiments described above. The display device 1000 includes, but is not limited to, the following types of electronic devices: a rollable or foldable mobile phone, a watch, a bracelet, a television or other wearable display or touch control electronic device, and a flexible smart phone, a tablet computer, a notebook computer, a desktop display, a television, smart glasses, a smart watch, an ATM machine, a digital camera, a vehicle-mounted display, a medical display, an industrial display, an electronic paper book, an electrophoretic display device, a game machine, a transparent display, a double-sided display, a naked-eye 3D display, a mirror display device, a semi-reflective and semi-transparent display device, or a flexible touch screen, etc.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.

Claims (11)

1. A light sensitive sensor, comprising:
a substrate;
the photosensitive layer is arranged on one side of the substrate and provided with a plurality of grooves, the inner surfaces of the grooves are provided with microstructures, and the microstructures are used for reflecting light rays in the grooves.
2. The photosensor according to claim 1, wherein a ratio of a depth of the groove to a thickness of the photosensitive layer is 1: 3.
3. the photosensor according to claim 1, wherein the photosensitive layer comprises an N-type amorphous silicon semiconductor layer and an intrinsic amorphous silicon semiconductor layer which are stacked in this order on the substrate.
4. The photosensor of claim 3, wherein an orthographic projection of the intrinsic amorphous silicon semiconductor layer on the substrate coincides with an orthographic projection of the N-type amorphous silicon semiconductor layer on the substrate along a direction of light incidence.
5. The photosensor of claim 3, wherein the N-type amorphous silicon semiconductor layer is doped with phosphine.
6. The light sensor of claim 1, further comprising:
a first electrode layer disposed between the substrate and the photosensitive layer; and
a first insulating layer disposed on the first electrode layer, the first insulating layer having a first opening to expose the first electrode layer.
7. The sensor of claim 6, wherein the photosensitive layer is disposed in the first opening, and an area of the photosensitive layer is larger than an area of the first opening.
8. The light sensor of claim 6, further comprising:
a second insulating layer disposed on the photosensitive layer and the first insulating layer, the second insulating layer having a second opening to expose the photosensitive layer; and
a second electrode layer covering the photosensitive layer and the second insulating layer.
9. A method for manufacturing a light sensor is characterized by comprising the following steps:
providing a substrate;
forming a photosensitive layer on one side of the substrate;
forming a groove in the photosensitive layer;
and forming a microstructure on the inner surface of the groove.
10. A display panel comprising a thin film transistor layer, a light-emitting functional layer and a thin film encapsulation layer sequentially stacked on a substrate, characterized by further comprising the photosensor of any one of claims 1 to 8.
11. The display panel according to claim 10, wherein the source drain metal layer of the thin film transistor is disposed on the same layer as the first electrode layer of the photosensor.
CN202110145702.9A 2021-02-02 2021-02-02 Photosensitive sensor, manufacturing method of photosensitive sensor and display panel Pending CN112928173A (en)

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Citations (7)

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TWI456781B (en) * 2012-05-04 2014-10-11 Tsec Corp Structure of solar cell and texturing method thereof
CN109728127A (en) * 2017-10-30 2019-05-07 上海箩箕技术有限公司 Photodiode and forming method thereof, imaging sensor, fingerprint imaging mould group
CN109728112A (en) * 2017-10-30 2019-05-07 上海箩箕技术有限公司 Photodiode and forming method thereof, imaging sensor, fingerprint imaging mould group
CN111490124A (en) * 2020-03-30 2020-08-04 杭州电子科技大学 Step-type micro-groove neutron detector and preparation method thereof
CN111640809A (en) * 2020-06-11 2020-09-08 京东方科技集团股份有限公司 Photoelectric device, preparation method thereof and photoelectric detector

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236063B1 (en) * 1998-05-15 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20100001639A1 (en) * 2008-07-06 2010-01-07 Samsung Mobile Display Co., Ltd. Organic light-emitting display apparatus
TWI456781B (en) * 2012-05-04 2014-10-11 Tsec Corp Structure of solar cell and texturing method thereof
CN109728127A (en) * 2017-10-30 2019-05-07 上海箩箕技术有限公司 Photodiode and forming method thereof, imaging sensor, fingerprint imaging mould group
CN109728112A (en) * 2017-10-30 2019-05-07 上海箩箕技术有限公司 Photodiode and forming method thereof, imaging sensor, fingerprint imaging mould group
CN111490124A (en) * 2020-03-30 2020-08-04 杭州电子科技大学 Step-type micro-groove neutron detector and preparation method thereof
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Application publication date: 20210608