CN112925131A - Display device - Google Patents

Display device Download PDF

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Publication number
CN112925131A
CN112925131A CN202110102408.XA CN202110102408A CN112925131A CN 112925131 A CN112925131 A CN 112925131A CN 202110102408 A CN202110102408 A CN 202110102408A CN 112925131 A CN112925131 A CN 112925131A
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CN
China
Prior art keywords
cyan
transistor
layer
display device
green
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Pending
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CN202110102408.XA
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Chinese (zh)
Inventor
查宝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN202110102408.XA priority Critical patent/CN112925131A/en
Publication of CN112925131A publication Critical patent/CN112925131A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

The embodiment of the application discloses display device, including array substrate, shading substrate and various rete, array substrate includes the transistor layer, the transistor layer includes first transistor and second transistor, first transistor is cyan green light sensing transistor, the second transistor is the switch transistor, the shading substrate includes the black matrix layer, the black matrix layer corresponds the setting with the second transistor, various rete sets up between array substrate and shading substrate, various rete includes cyan green light filter part, cyan green light filter part is including first cyan green light filter sub-part and the second cyan green light filter sub-part of range upon range of setting, first transistor corresponds the setting with cyan green light filter part. The first transistor is provided with the corresponding cyan-green light filter part, so that the influence of ambient light on the cyan-green light sensing transistor is reduced, and the signal-to-noise ratio of the display device is further improved.

Description

Display device
Technical Field
The application relates to the technical field of display, in particular to a display device.
Background
With the development of display technology, it is a trend to integrate sensors into a display device, for example, touch sensors and optical sensors used at present are attached to the outside of the display device, which not only reduces the light efficiency of the display device, but also increases the cost. At present, in order to reduce the loss of light efficiency and the cost, a method of integrating a sensor in a display device is generally adopted, however, after the sensor is integrated in the display device, the problem of light interference still exists, so that the signal to noise ratio of the display device is reduced.
Therefore, there is a need for a display device to improve the signal-to-noise ratio of the display device.
Disclosure of Invention
The embodiment of the application provides a display device to solve the problem that the signal-to-noise ratio of the display device in the prior art is low.
An embodiment of the present application provides a display device, including:
the array substrate comprises a transistor layer, the transistor layer comprises a first transistor and a second transistor, the first transistor is a cyan-green photo-sensing transistor, and the second transistor is a switch transistor;
the shading substrate comprises a black matrix layer, and the black matrix layer is arranged corresponding to the second transistor; and
the color film layer is arranged between the array substrate and the shading substrate and comprises a cyan-green light filter part, the cyan-green light filter part comprises a first cyan-green light filter sub part and a second cyan-green light filter sub part which are stacked, and the first transistor and the cyan-green light filter part are correspondingly arranged.
Optionally, in some embodiments of the present application, the first cyan-green filter subsection is one of a green filter subsection and a blue filter subsection, the second cyan-green filter subsection is one of a blue filter subsection and a green filter subsection, and the first cyan-green filter subsection is different from the second cyan-green filter subsection.
Optionally, in some embodiments of the present application, the first cyan-green filter sub-section includes a first portion and a second portion, the first portion is connected to the second portion, a thickness of the first portion is greater than a thickness of the second portion, the first portion transmits light other than cyan-green light, the second cyan-green filter sub-section is disposed on the second portion, and the second cyan-green filter sub-section and the second portion transmit cyan-green light.
Optionally, in some embodiments of the present application, the thickness of the first cyan-green filter portion is 1 micron to 3 microns.
Optionally, in some embodiments of the present application, the thickness of the second cyan-green filter sub-section is 1 micron to 1.5 microns.
Optionally, in some embodiments of the present application, the light-shielding substrate further includes a light-shielding substrate layer, and the black matrix layer and the color film layer are disposed on the light-shielding substrate layer at the same layer.
Optionally, in some embodiments of the present application, the display device further includes a liquid crystal layer, the liquid crystal layer is disposed between the array substrate and the light-shielding substrate, and the color film layer is disposed between the array substrate and the liquid crystal layer.
Optionally, in some embodiments of the present application, the display device further includes a first alignment film disposed between the light-shielding substrate and the liquid crystal layer.
Optionally, in some embodiments of the present application, the display device further includes a second alignment film disposed between the liquid crystal layer and the array substrate.
Optionally, in some embodiments of the present application, the display device further includes a first conductive layer disposed between the liquid crystal layer and the light-shielding substrate.
The embodiment of the application discloses display device, display device includes array substrate, shading substrate and various rete, array substrate includes the transistor layer, the transistor layer includes first transistor and second transistor, first transistor is cyan green light sensing transistor, the second transistor is the switch transistor, the shading substrate includes the black matrix layer, the black matrix layer corresponds the setting with the second transistor, various rete sets up between array substrate and shading substrate, various rete includes cyan green light filter part, cyan green light filter part is including first cyan green light filter subtotal the second cyan green light filter subtotal of range upon range of setting, first transistor corresponds the setting with cyan green light filter part. The first transistor is provided with the corresponding cyan-green light filter part, so that the influence of ambient light on the cyan-green light sensing transistor is reduced, and the signal-to-noise ratio of the display device is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a first structure of a display device provided in an embodiment of the present application.
Fig. 2 is a transmission spectrum diagram of a cyan-green optical filter portion according to an embodiment of the present application.
Fig. 3 is a schematic circuit diagram of a display device according to an embodiment of the present disclosure.
Fig. 4 is a schematic cross-sectional view of a second structure of a display device provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
Referring to fig. 1, fig. 1 is a schematic cross-sectional view illustrating a first structure of a display device according to an embodiment of the present disclosure. The present application provides a display device 10. The display device 10 includes an array substrate 100, a light-shielding substrate 200, and a color film layer 300. The specific description is as follows:
the array substrate 100 includes an array substrate layer 110 and a transistor layer 400. The array substrate layer 110 may be a polyimide substrate, a glass substrate, an ultra-thin glass substrate, or the like. The transistor layer 400 includes a first transistor 410 and a second transistor 420. The first transistor 410 is a cyan-green photo-sensing transistor. The second transistor 420 is a switching transistor.
Specifically, the first transistor 410 includes a first gate electrode 411, a first gate insulating layer 412, a first active layer 413, a first source electrode 414, and a first drain electrode 415. The first gate 411 is disposed on the second substrate 110. The material of the first gate 411 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn, and Fe. The first gate insulating layer 412 is disposed on the first gate 411. The material of the first gate insulating layer 412 includes SiNx、SiOxAnd SiOxNyOne or a combination of several of them. The first active layer 413 is disposed on the first gate insulating layer 412. The material of the first active layer 413 includes amorphous silicon. The first source electrode 414 is disposed on one side of the first active layer 413. The first drain electrode 415 is disposed at the other side of the first active layer 413. The material of the first source electrode 414 and the first drain electrode 415 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn, and Fe.
The second transistor 420 includes a second gate electrode 421, a second gate insulating layer 422, a second active layer 423, a second source electrode 424, and a second drain electrode 425. The second gate 421 and the first gate 411 are disposed on the array substrate layer 110 at the same layer. The second gate 421 and the first gate 411 are insulated from each other. The material of the second gate 421 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn, and Fe. The second gate insulating layer 422 is disposed on the second gate 421. The second gate insulating layer 422 shares a layer with the first gate insulating layer 412. The second active layer 423 and the first active layer 413 are disposed on the second gate insulating layer 422 at the same layer. The material of the second active layer 423 includes amorphous silicon. The second active layer 423 is not connected to the first active layer 413. The second source 424 is disposed at one side of the second active layer 423. The second drain electrode 425 is disposed at the other side of the second active layer 423. The material of the second source electrode 424 and the second drain electrode 425 comprises one or a combination of Al, Cu, Ag, Au, Mn, Zn and Fe.
In one embodiment, the display device 10 further includes a passivation layer 500. The passivation layer 500 is disposed on the transistor layer 400. The material of the passivation layer 500 includes SiNx、SiOxAnd SiOxNyOne or a combination of several of them. The passivation layer 500 is used for planarizing the transistor layer 400, so as to facilitate the subsequent processes, protect the transistor layer 400, and prevent the transistor layer 400 from being damaged in the subsequent processes.
The light-shielding substrate 200 includes a light-shielding substrate layer 210 and a black matrix layer 220. The light-shielding substrate layer 210 may be a polyimide substrate, a glass substrate, an ultra-thin glass substrate, or the like. The black matrix layer 220 is disposed on a side of the light-shielding substrate layer 210 close to the array substrate 100. The black matrix layer 220 is disposed corresponding to the second transistor 420. The black matrix layer 220 is used to shield light.
In one embodiment, the thickness D of the black matrix layer 220 is 1 micron to 1.5 microns. Specifically, the thickness D of the black matrix layer 220 may be 1.1 micrometers, 1.3 micrometers, 1.34 micrometers, 1.4 micrometers, or the like.
The color film layer 300 is disposed between the array substrate 100 and the light-shielding substrate 200. Specifically, the black matrix layer 220 and the color film layer 300 are disposed on the light-shielding substrate layer 210 in the same layer. The color film layer 300 includes a cyan-green filter portion 310. The cyan-green light filter portion 310 includes a first cyan-green light filter sub-portion 311 and a second cyan-green light filter sub-portion 312. The second cyan-green filter sub-section 312 is disposed on the first cyan-green filter sub-section 311. The first transistor 410 is provided corresponding to the cyan-green filter portion 310.
In one embodiment, the first cyan-green filter sub-portion 311 is one of a green filter sub-portion and a blue filter sub-portion. The second cyan-green filter sub-section 312 is the other of the blue filter sub-section and the green filter sub-section.
In one embodiment, the thickness H of the first cyan-green filter portion 3111Is 1 micron to 3 microns. Specifically, the thickness H of the first cyan-green filter portion 3111And may be 1.2 microns, 1.5 microns, 1.8 microns, 2.2 microns, 2.5 microns, 2.7 microns, 2.9 microns, or the like.
In one embodiment, the thickness H of the second cyan-green filter sub-portion 3122Is 1 micron to 1.5 microns. Specifically, the thickness H of the second cyan-green filter sub-section 3122And may be 1.1, 1.2, 1.3, 1.4 microns, or the like.
In one embodiment, the first cyan-green filter sub-section 311 includes a first portion 3111 and a second portion 3112. The first section 3111 is connected to the second section 3112. Thickness W of the first portion 31111Is greater than the thickness W of the second portion 31122. The first section 3111 transmits light other than cyan-green light, and the second cyan-green filter sub-section 312 is disposed on the second section 3112. The second cyan-green filter sub-section 312 and the second section 3112 transmit cyan-green light.
In one embodiment, the thickness W of the first portion 31111Is 2 microns to 3 microns. Specifically, the thickness W of the first portion 31111And may be 2.1 microns, 2.3 microns, 2.7 microns, 2.8 microns, or the like. Thickness W of the second portion 31122Is 1 micron to 1.5 microns. Specifically, the thickness W of the second portion 31122And may be 1.1, 1.2, 1.3, 1.4 microns, or the like.
In this application, the first cyan-green filter sub-portion 311 is configured to include a first portion 3111 and a second portion 3112, the second cyan-green filter sub-portion 312 is configured on the second portion 3112 to form a stacked structure, the first portion 3111, which does not form the stacked structure with the second cyan-green filter sub-portion 312, transmits light except cyan-green light to provide the light required for displaying by the display device 10, the second cyan-green filter sub-portion 312 and the second portion 3112 overlap to transmit cyan-green light to provide the cyan-green light required for touch control or touching by the display device, that is, the cyan-green filter portion 310 can transmit the light required for displaying by the display device 10 and can transmit cyan-green light without mutual influence, and the cyan-green light is transmitted to the first transistor 410 through the cyan-green filter portion 310, so that the interference of ambient light to the first transistor 410 is reduced, that is, leakage current generated in the first active layer 411 is prevented, so that the signal-to-noise ratio of the first transistor 410 is improved, and the signal-to-noise ratio of the display device 10 is improved, so that the performance of the display device 10 is improved, and the production cost is reduced.
Referring to fig. 2, fig. 2 is a transmission spectrum diagram of a cyan-green light filter portion according to an embodiment of the present application. In the present application, the cyan-green filter portion 310 is formed by stacking two cyan-green filter sub-portions, such that cyan-green light is transmitted at the two cyan-green filter sub-portions, and the transmittance of cyan-green light is less than 43% at 480 nm-530 nm, whereas in the prior art, the transmittance of cyan-green light is as high as 80% or more at 480 nm-530 nm.
Therefore, by using the display device 10 of the present application, the interference of the ambient light to the display device 10 can be reduced, that is, the influence of the ambient light on the first transistor 410 is avoided, and then the problem of leakage current of the first transistor 410 is avoided, so that the signal-to-noise ratio of the display device 10 is improved, and further the performance of the display device 10 is improved.
In one implementation, the display device 10 further includes a liquid crystal layer 600. The liquid crystal layer 600 is disposed between the array substrate 100 and the light-shielding substrate 200.
In one implementation, the display device 10 further includes a retaining wall 700. The retaining wall 700 is disposed in the liquid crystal layer 600. The retaining wall 700 is used to support the liquid crystal layer 600, so as to avoid the problem of damage or fracture of the liquid crystal layer 600 during subsequent processes or use, thereby improving the performance of the display device 10.
In one embodiment, the display device 10 further includes a first alignment film 800. The first alignment film 800 is disposed between the light-shielding substrate 200 and the liquid crystal layer 600.
In one embodiment, the display device 10 further includes a second alignment film 900. The second alignment film 900 is disposed between the liquid crystal layer 600 and the array substrate 100.
In one embodiment, the display device 10 further includes a first conductive layer 1000. The first conductive layer 1000 is disposed between the liquid crystal layer 600 and the light-shielding substrate 200. Specifically, the first conductive layer 1000 is disposed between the light-shielding substrate 100 and the first alignment layer 800. The first conductive layer 1000 is used to drive the liquid crystal layer 600.
In one embodiment, the display device 10 further includes a second conductive layer 1100. The second conductive layer 1100 is disposed between the passivation layer 500 and the second alignment film 900. The second conductive layer 1100 is used to drive the liquid crystal layer 600.
Referring to fig. 3, fig. 3 is a schematic circuit structure diagram of a display device according to an embodiment of the present disclosure. The circuit structure of the display device 10 in the present application may adopt a circuit structure of 2T1C, 3T1C, 4T1C or 5T1C, where T is a transistor, 2T indicates that a switching transistor and a cyan-green photo-sensing transistor are included, and so on. And C is a capacitor. In the present application, the circuit configuration of the display device 10 is described with 2T1C as an example.
Referring to fig. 4, fig. 4 is a schematic cross-sectional view illustrating a second structure of a display device according to an embodiment of the present disclosure. It should be noted that the second structure is different from the first structure in that:
the color film layer 300 is disposed between the array substrate 100 and the liquid crystal layer 600. The color film layer 300 and the second conductive layer 1100 are disposed on the same layer. The color film layer 300 further includes a first visible light filter portion 320 and a second visible light filter portion 330. The first visible light filter portion 320 is disposed between the second visible light filter portion 330 and the cyan-green light filter portion 310. The first visible light filter portion 320 is one of a red light filter portion and a green light filter portion. The second visible light filter portion 330 is the other of the red light filter portion and the green light filter portion. The passivation layer 500 includes a via 501. The via 501 penetrates the passivation layer 500 to expose the second transistor 420. Specifically, the via 501 exposes the second drain 425.
In this application, cyan-green light filter portion 310 is by second cyan-green light filter sub-portion 312 set up in it forms to pile up on second part 3112, cyan-green light filter portion 310 passes through cyan-green light, sees through cyan-green light's of cyan-green light filter portion 310 luminous intensity reduces to make the cyan-green light luminousness among the prior art be 80% and above, fall to 43% and below, and then reduced ambient light to the interference of first transistor 410, thereby avoid first active layer 411 produces the leakage current, and then promotes first transistor 410's signal-to-noise ratio, and then has improved display device 10's signal-to-noise ratio, and then has promoted display device 10's performance and reduced manufacturing cost.
The application discloses display device, display device includes array substrate, shading base plate and various rete, array substrate includes the transistor layer, the transistor layer includes first transistor and second transistor, first transistor is cyan green light sensing transistor, the second transistor is the switch transistor, the shading base plate includes the black matrix layer, the black matrix layer with the second transistor corresponds the setting, various rete set up in array substrate with between the shading base plate, various rete includes cyan green light filter portion, cyan green light filter portion is including the first cyan green light filter subtotal the blue or green light filter subtotal second filter subtotal of range upon range of setting, first transistor with cyan green light filter portion corresponds the setting. The first transistor is provided with the corresponding cyan-green light filtering part, so that the influence of ambient light on the cyan-green light sensing transistor is reduced, and the signal-to-noise ratio of the display device is improved.
The foregoing detailed description is directed to a display device provided in an embodiment of the present application, and specific examples are used herein to illustrate the principles and implementations of the present application, and the above description of the embodiments is only provided to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A display device, comprising:
the array substrate comprises a transistor layer, the transistor layer comprises a first transistor and a second transistor, the first transistor is a cyan-green photo-sensing transistor, and the second transistor is a switch transistor;
the shading substrate comprises a black matrix layer, and the black matrix layer is arranged corresponding to the second transistor; and
the color film layer is arranged between the array substrate and the shading substrate and comprises a cyan-green light filter part, the cyan-green light filter part comprises a first cyan-green light filter sub part and a second cyan-green light filter sub part which are stacked, and the first transistor and the cyan-green light filter part are correspondingly arranged.
2. The display device according to claim 1, wherein the first cyan-green filter sub-section is one of a green filter sub-section and a blue filter sub-section, and the second cyan-green filter sub-section is one of a blue filter sub-section and a green filter sub-section, and the first cyan-green filter sub-section is different from the second cyan-green filter sub-section.
3. The display device according to claim 1, wherein the first cyan-green filter sub-section includes a first portion and a second portion, the first portion being connected to the second portion, a thickness of the first portion being larger than a thickness of the second portion, the first portion transmitting light other than cyan-green light, the second cyan-green filter sub-section being provided on the second portion, the second cyan-green filter sub-section transmitting cyan-green light with the second portion.
4. The display device according to claim 1, wherein the thickness of the first cyan-green filter portion is 1 μm to 3 μm.
5. The display device of claim 1, wherein the second cyan-green filter sub-section has a thickness of 1 micron to 1.5 microns.
6. The display device of claim 1, wherein the light-shielding substrate further comprises a light-shielding substrate layer, and the black matrix layer and the color film layer are disposed on the light-shielding substrate layer in the same layer.
7. The display device of claim 1, further comprising a liquid crystal layer disposed between the array substrate and the light-shielding substrate, wherein the color film layer is disposed between the array substrate and the liquid crystal layer.
8. The display device according to claim 7, further comprising a first alignment film disposed between the light-shielding substrate and the liquid crystal layer.
9. The display device of claim 7, further comprising a second alignment film disposed between the liquid crystal layer and the array substrate.
10. The display device according to claim 7, further comprising a first conductive layer provided between the liquid crystal layer and the light-shielding substrate.
CN202110102408.XA 2021-01-26 2021-01-26 Display device Pending CN112925131A (en)

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CN111812883A (en) * 2020-07-08 2020-10-23 深圳市华星光电半导体显示技术有限公司 Display device and control method thereof
CN111812900A (en) * 2020-07-08 2020-10-23 深圳市华星光电半导体显示技术有限公司 Display device and control method thereof

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