CN112912996A - 薄膜晶体管阵列基板的缺陷检测方法 - Google Patents
薄膜晶体管阵列基板的缺陷检测方法 Download PDFInfo
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- CN112912996A CN112912996A CN201880095931.0A CN201880095931A CN112912996A CN 112912996 A CN112912996 A CN 112912996A CN 201880095931 A CN201880095931 A CN 201880095931A CN 112912996 A CN112912996 A CN 112912996A
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- thin film
- film transistor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/91—Investigating the presence of flaws or contamination using penetration of dyes, e.g. fluorescent ink
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- Thin Film Transistor (AREA)
Abstract
本申请提供了一种薄膜晶体管阵列基板的缺陷检测方法,包括如下步骤:提供待检测的薄膜晶体管阵列基板,所述待检测的薄膜晶体管阵列基板包括基底、设置在所述基底上的薄膜晶体管阵列层(S101);在所述薄膜晶体管阵列层背朝所述基底的侧面形成包含有示踪物的膜层(S103);去除覆盖在所述薄膜晶体管阵列层的裸露面上的所述膜层(S105);采用辐射源照射所述薄膜晶体管阵列层背朝所述基底的一侧,并通过光电传感器获取感测信号(S107);以及根据所述感测信号,判断薄膜晶体管阵列层是否存在缺陷(S109)。本申请薄膜晶体管阵列基板的缺陷检测方法,不仅提高了检测有效率,且较低了质量安全风险。
Description
PCT国内申请,说明书已公开。
Claims (19)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2018/116729 WO2020103038A1 (zh) | 2018-11-21 | 2018-11-21 | 薄膜晶体管阵列基板的缺陷检测方法 |
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CN112912996A true CN112912996A (zh) | 2021-06-04 |
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CN201880095931.0A Pending CN112912996A (zh) | 2018-11-21 | 2018-11-21 | 薄膜晶体管阵列基板的缺陷检测方法 |
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CN (1) | CN112912996A (zh) |
WO (1) | WO2020103038A1 (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101051619A (zh) * | 2006-04-03 | 2007-10-10 | 三星电子株式会社 | 基板检查装置及使用其的基板检查方法 |
CN102944195A (zh) * | 2012-11-28 | 2013-02-27 | 水利部交通运输部国家能源局南京水利科学研究院 | 一种裂缝深度的检测方法 |
CN104237255A (zh) * | 2014-09-22 | 2014-12-24 | 合肥鑫晟光电科技有限公司 | 玻璃基板的检测方法 |
CN106291654A (zh) * | 2016-08-31 | 2017-01-04 | 京东方科技集团股份有限公司 | 辐射检测器及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1286544C (zh) * | 2005-05-26 | 2006-11-29 | 上海交通大学 | 卷式反渗透膜器缺陷的在线诊断方法 |
KR20150131610A (ko) * | 2014-05-15 | 2015-11-25 | 동우 화인켐 주식회사 | 터치 패널 |
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2018
- 2018-11-21 WO PCT/CN2018/116729 patent/WO2020103038A1/zh active Application Filing
- 2018-11-21 CN CN201880095931.0A patent/CN112912996A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101051619A (zh) * | 2006-04-03 | 2007-10-10 | 三星电子株式会社 | 基板检查装置及使用其的基板检查方法 |
CN102944195A (zh) * | 2012-11-28 | 2013-02-27 | 水利部交通运输部国家能源局南京水利科学研究院 | 一种裂缝深度的检测方法 |
CN104237255A (zh) * | 2014-09-22 | 2014-12-24 | 合肥鑫晟光电科技有限公司 | 玻璃基板的检测方法 |
CN106291654A (zh) * | 2016-08-31 | 2017-01-04 | 京东方科技集团股份有限公司 | 辐射检测器及其制造方法 |
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WO2020103038A1 (zh) | 2020-05-28 |
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