CN112909131A - Silicon wafer processing system and processing method, solar cell and manufacturing method thereof - Google Patents
Silicon wafer processing system and processing method, solar cell and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a silicon wafer processing system and method, a solar cell and a manufacturing method of the solar cell, relates to the technical field of photovoltaics, and improves the working efficiency on the basis of ensuring the process quality. The silicon wafer processing system comprises an etching device, a cleaning liquid supply device and a silicon wafer bearing mechanism. The etching device is used for carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid; the cleaning liquid supply device is used for supplying cleaning liquid to the second surface of the silicon wafer when the etching liquid is used for carrying out single-surface etching treatment on the first surface of the silicon wafer, and the cleaning liquid is used for cleaning the second surface of the silicon wafer; the silicon wafer bearing mechanism is used for bearing a silicon wafer, and the etching device and the cleaning liquid supply device are respectively positioned on two sides of the silicon wafer bearing mechanism. The silicon wafer processing system and method, the solar cell and the manufacturing method thereof are used for processing the silicon wafer for manufacturing the solar cell.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a silicon wafer processing system and method, a solar cell and a manufacturing method of the solar cell.
Background
The manufacturing process of the crystalline silicon solar cell generally comprises the following steps: cleaning, texturing, diffusing, etching, removing phosphorosilicate glass, plating an antireflection film, printing an electrode, sintering and the like. In the manufacturing process, the silicon wafer needs to be etched and cleaned for many times. Under the condition, the manufacturing period of the solar cell is prolonged by multiple etching and cleaning processes, and the working efficiency is reduced.
Disclosure of Invention
The invention aims to provide a silicon wafer processing system and a silicon wafer processing method, a solar cell and a manufacturing method of the solar cell, and the working efficiency is improved on the basis of ensuring the process quality.
In a first aspect, the present invention provides a system for processing silicon wafers. The silicon wafer processing system comprises an etching device, a cleaning liquid supply device and a silicon wafer bearing mechanism. The etching device is used for carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid; the cleaning liquid supply device is used for supplying cleaning liquid to the second surface of the silicon wafer when the etching liquid is used for carrying out single-surface etching treatment on the first surface of the silicon wafer, and the cleaning liquid is used for cleaning the second surface of the silicon wafer; the silicon wafer bearing mechanism is used for bearing a silicon wafer, and the etching device and the cleaning liquid supply device are respectively positioned on two sides of the silicon wafer bearing mechanism.
When the technical scheme is adopted, the processing system of the silicon wafer comprises the etching device and the cleaning liquid supply device, and in the process that the etching device carries out single-side etching on the first surface of the silicon wafer carried by the silicon wafer carrying mechanism, the cleaning liquid supply device supplies cleaning liquid to the second surface of the silicon wafer to clean the second surface of the silicon wafer. Namely, the processing system of the silicon wafer completes the single-side etching processing of the first side of the silicon wafer and simultaneously completes the cleaning of the second side of the silicon wafer. At this time, the process time of cleaning treatment after the single-side etching treatment is saved. When the manufacturing process of the solar cell comprises multiple single-side etching and cleaning treatments, the cleaning treatment and the etching treatment are completed in the same procedure, so that the working time for manufacturing the solar cell can be greatly reduced, and the manufacturing period is shortened. Based on the silicon wafer processing system, the working efficiency of manufacturing the solar cell can be effectively improved, the cost is further reduced, and the market competitiveness is improved.
In addition, in the process of carrying out single-side etching on the first surface of the silicon wafer by the etching device, the cleaning liquid supply device supplies cleaning liquid to the second surface of the silicon wafer, so that the cleaning liquid can be attached to the second surface of the silicon wafer. At the moment, the contact probability of the etching liquid and the second surface of the silicon wafer can be reduced, further, the damage of the etching liquid to the structure of the second surface of the silicon wafer is reduced, and the effect of protecting the second surface of the silicon wafer is achieved.
In some implementations, the cleaning solution outlet of the cleaning solution supply device is located above the etching device. At this time, the silicon wafer is positioned between the cleaning liquid supply device and the etching device. The cleaning liquid supply device can conveniently supply the cleaning liquid to the second surface of the silicon wafer below. Meanwhile, the etching device positioned below can conveniently carry out single-side etching treatment on the first surface of the silicon wafer. The arrangement mode can reduce the construction difficulty of the silicon chip processing system, improve the practicability,
in some implementations, the cleaning solution supply device is selected from a spray device, an inkjet printing device, and an application device. The devices can conveniently and controllably supply cleaning fluid to the second side of the silicon wafer. By controlling the cleaning liquid supply device, the cleaning process can be controlled, and the process quality is improved.
In some implementations, the etching apparatus is selected from a chain type single-sided etching apparatus, a roller type single-sided etching apparatus. At this time, the two etching devices can carry out single-side etching treatment on the first surface of the silicon wafer in a 'water floating' mode. And the etching devices can enable the second surface of the silicon chip to be in a naked state, so that the cleaning liquid supply device can clean the second surface of the silicon chip conveniently.
In some implementations, when the etching apparatus is a roller-type single-sided etching apparatus, the etching apparatus includes an etching groove for containing an etching liquid and a spiral deep groove roller located in the etching groove. The groove depth of the spiral deep groove roller is 0.8 mm-1.3 mm, and the groove interval of the spiral deep groove roller is 1.2 mm-1.8 mm; part of the spiral deep groove roller protrudes out of the etching groove. When the first surface of the silicon wafer is contacted with the spiral deep groove roller, part of the first surface protrudes out of the structure of the etching groove, so that the second surface of the silicon wafer can be prevented from contacting the etching liquid in the etching groove, and the single-surface etching treatment of the silicon wafer is realized. And when the groove depth of the spiral deep groove roller is in the range, the spiral deep groove roller can carry more etching liquid to contact with the first surface of the silicon wafer under the action of liquid tension, so that a better etching effect is achieved. When the groove spacing of the spiral deep groove roller is in the range, the groove spacing is proper, and the etching liquid in two adjacent spiral deep grooves can ensure that the whole first surface of the silicon wafer is in contact with the etching liquid under the action of liquid tension, so that a better etching effect is achieved.
In some implementations, a heating assembly for heating the etching solution is disposed on the etching apparatus. At the moment, the heating component can heat the etching liquid in the etching device, so that the temperature of the etching liquid is increased, and the reaction temperature of etching reaction can be increased when the etching liquid is contacted with the first surface of the silicon wafer. Based on the structure, the heating component can improve the etching efficiency and the working efficiency on the basis of not damaging the existing structure (pn junction and the like) of the silicon chip.
In some implementations, the processing system further includes a pre-etching device for pre-etching the first surface of the silicon wafer and a silicon wafer transmission line. The silicon wafer bearing mechanism of the processing system is positioned on the silicon wafer transmission line, and the pre-etching device is positioned in the front of the etching device. At the moment, the pre-etching device can pre-etch the first surface of the silicon wafer, so that the follow-up single-surface etching treatment is facilitated, and the working efficiency and the working quality of the single-surface etching treatment are improved. The silicon wafer transmission line can carry silicon wafers to circulate among different processing devices.
In a second aspect, the present invention provides a method for processing a silicon wafer. The processing method of the silicon wafer applies a processing system with an etching device and a cleaning liquid supply device, and comprises the following steps:
carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid;
and when the first surface of the silicon wafer is subjected to single-surface etching treatment by using the etching liquid, supplying a cleaning liquid to the second surface of the silicon wafer, so that the cleaning liquid cleans the second surface of the silicon wafer.
The advantageous effects of the method for processing silicon wafers provided by the second aspect can be obtained by referring to the advantageous effects of the system for processing silicon wafers described in the first aspect or any one of the implementations of the first aspect, which will not be further described herein.
In some implementations, the single-sided etching process is a single-sided texturing process or a single-sided suede polishing process. At this time, the second surface of the silicon wafer may be cleaned while the first surface of the silicon wafer is subjected to a single-side texturing treatment or a single-side texturing polishing treatment. Meanwhile, the processing method of the silicon wafer can shorten the manufacturing period of the solar cell and improve the production efficiency, and in the single-side etching process, the cleaning agent is provided for the second side of the silicon wafer, so that the cleaning agent can be attached to the second side of the silicon wafer. Based on this, the damage of the etching liquid to the second surface of the silicon chip due to abnormal working conditions such as splashing can be reduced, and the effect of protecting the second surface structure of the silicon chip is further achieved.
In some implementations, the etching solution is a first alkali solution. The solute of the first alkali liquor comprises one or two of KOH and NaOH, the mass concentration of the first alkali liquor is 3-6%, and the temperature of the first alkali liquor is 45-75 ℃. The first alkali liquor has proper temperature and mass concentration, and when the first alkali liquor is used for single-side etching of the first surface of the silicon wafer, the etching rate is high. Moreover, the single-side etching treatment is carried out by using the alkali liquor, so that the problem of discharging a large amount of nitrogen in the etching process can be avoided, the difficulty in treating the waste liquid of the single-side etching process is reduced, the environmental protection cost is saved, and the environmental friendliness is improved. When the single-side etching treatment is the single-side suede polishing treatment, the first alkali liquor can quickly remove the suede structure of the first side to form a microstructure similar to a square, so that the light reflectivity and the flatness of the first side are improved, and the passivation effect and the short-circuit current of the manufactured battery piece are further improved. When the single-side etching treatment is the single-side texturing treatment, the first alkali liquor has a higher etching rate, so that a uniform and regular textured structure can be formed on the first side of the silicon wafer.
In some implementations, the etching liquid is a first acid liquid. The solute of the first acid solution is HF and HNO3、H2SO4The mass concentration of the first acid solution is 8-58%.
In some implementations, the cleaning solution is a second alkaline solution. The solute of the second alkali liquor comprises one or two of KOH and NaOH, the mass concentration of the second alkali liquor is 3-5%, and the temperature of the second alkali liquor is 18-24 ℃. At the moment, the concentration of the second alkali liquor is low, the temperature is low, and slight chemical etching can be carried out on the second surface of the silicon wafer so as to achieve the purposes of cleaning and removing the porous silicon. When the mass concentration and the temperature of the second alkali liquor are within the range, the chemical etching effect of the second alkali liquor is proper, so that the silicon wafer cleaning agent not only has good effects of cleaning and removing porous silicon, but also can avoid damaging the functional structure of the second surface of the silicon wafer.
In some implementations, the cleaning fluid is a second acid fluid. The solute of the second acid solution comprises HF and O3The mass concentration of HF in the second acid solution is 10-18%, and O in the second acid solution3The mass concentration of (A) is 12ppm-20 ppm. The ozone has strong impurity removing capability, and can play a good cleaning role by being matched with hydrofluoric acid, so that the impurity residue is reduced.
In some implementations, the etching solution and the cleaning solution are both acidic solutions, or both the etching solution and the cleaning solution are alkaline solutions. At the moment, the etching liquid and the cleaning liquid for simultaneously processing the silicon wafer have the same acid-base property, so that the interference among different types of chemical reagents can be reduced, and the reliability of a single-sided etching process and a cleaning process is improved.
In some implementations, when the solutes of the etching solution and the cleaning solution are the same, the cleaning solution is replenished into the etching solution after cleaning the second surface of the silicon wafer. At this time, on one hand, the waste of solute in the cleaning solution can be avoided, and on the other hand, the etchant can be supplemented timely and conveniently. Based on this, can material saving, reduce cost.
In some implementations, when the etching solution is the first alkali solution, before the etching solution is used to perform the single-sided etching treatment on the first surface of the silicon wafer, the silicon wafer processing method further includes: and pre-etching the first surface of the silicon wafer by using a third acid solution, wherein the third acid solution comprises one or more of hydrofluoric acid, nitric acid and sulfuric acid, and the concentration of the third acid solution is 8-58%. At this time, the third acid solution can slightly corrode the first surface of the silicon wafer, so that a primary etching effect is obtained. And the third acid solution reacts with the first surface of the silicon wafer, so that a structural layer which is easy to react with the first alkali solution can be formed on the first surface of the silicon wafer, the first surface of the silicon wafer is etched by the first alkali solution, the etching efficiency of the first alkali solution is improved, and a required structure is obtained.
In some implementations, the first surface of the silicon wafer is a back surface of the silicon wafer, and the second surface of the silicon wafer is a front surface of the silicon wafer; or the first surface of the silicon wafer is the front surface of the silicon wafer, and the second surface of the silicon wafer is the back surface of the silicon wafer.
In a third aspect, the present invention provides a method for fabricating a solar cell. The manufacturing method of the solar cell comprises the processing method of the silicon wafer described in the second aspect or any possible implementation manner of the second aspect.
The beneficial effects of the method for manufacturing a solar cell provided in the third aspect can be obtained by referring to the beneficial effects of the method for processing a silicon wafer described in the second aspect or any implementation manner of the second aspect, which will not be described again here.
In a fourth aspect, the present invention provides a solar cell. The solar cell is manufactured by the manufacturing method of the solar cell described in any possible implementation manner of the third aspect or the second aspect.
The advantages of the solar cell provided by the fourth aspect can refer to the advantages of the method for manufacturing a solar cell described in the third aspect or any implementation manner of the third aspect, which is not further described herein.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a silicon wafer processing system in accordance with the practice of the present invention;
fig. 2 is a schematic view of the surface of a silicon wafer processed by the silicon wafer processing method according to the embodiment of the present invention.
Detailed Description
In order to facilitate clear description of technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish the same items or similar items having substantially the same functions and actions. Those skilled in the art will appreciate that the terms "first," "second," etc. do not denote any order or quantity, nor do the terms "first," "second," etc. denote any order or importance.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
It is to be understood that the terms "exemplary" or "such as" are used herein to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
In the present invention, "at least one" means one or more, "a plurality" means two or more. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, a and b combination, a and c combination, b and c combination, or a, b and c combination, wherein a, b and c can be single or multiple.
As shown in fig. 1, an embodiment of the invention provides a silicon wafer processing system. The silicon wafer processing system comprises an etching device, a cleaning liquid supply device and a silicon wafer bearing mechanism. The etching device is used for carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid; the cleaning liquid supply device is used for supplying cleaning liquid to the second surface of the silicon wafer when the etching liquid is used for carrying out single-surface etching treatment on the first surface of the silicon wafer, and the cleaning liquid is used for cleaning the second surface of the silicon wafer; the silicon wafer bearing mechanism is used for bearing a silicon wafer, and the etching device and the cleaning liquid supply device are respectively positioned on two sides of the silicon wafer bearing mechanism.
During specific work, the silicon wafer is conveyed to the processing system of the silicon wafer, the etching device carries out single-side etching processing on the first surface of the silicon wafer positioned on the silicon wafer bearing mechanism, meanwhile, the cleaning liquid supply device provides cleaning liquid for the first surface of the silicon wafer positioned on the silicon wafer bearing mechanism, and the cleaning liquid cleans the second surface of the silicon wafer. After the first and second sides of the silicon wafer are processed, the silicon wafer is transferred to the next process.
Based on the structure of the silicon wafer processing system, the silicon wafer processing system comprises an etching device and a cleaning liquid supply device, and when the etching device carries out single-side etching on the first surface of the silicon wafer positioned on the silicon wafer bearing mechanism, the cleaning liquid supply device supplies cleaning liquid to the second surface of the silicon wafer to clean the second surface of the silicon wafer. Namely, the processing system of the silicon wafer completes the single-side etching processing of the first side of the silicon wafer and simultaneously completes the cleaning of the second side of the silicon wafer. At this time, the process time of cleaning treatment after the single-side etching treatment is saved. When the manufacturing process of the solar cell comprises multiple single-side etching and cleaning treatments, the cleaning treatment and the etching treatment are completed in the same procedure, so that the working time for manufacturing the solar cell can be greatly reduced, and the manufacturing period is shortened. Based on this, the silicon wafer processing system provided by the embodiment of the invention can effectively improve the working efficiency of manufacturing the solar cell, thereby reducing the cost and improving the market competitiveness.
In addition, in the process of carrying out single-side etching on the first surface of the silicon wafer by the etching device, the cleaning liquid supply device supplies cleaning liquid to the second surface of the silicon wafer, so that the cleaning liquid can be attached to the second surface of the silicon wafer. At the moment, the contact probability of the etching liquid and the second surface of the silicon wafer can be reduced, further, the damage of the etching liquid to the structure of the second surface of the silicon wafer is reduced, and the effect of protecting the second surface of the silicon wafer is achieved.
The etching device can be a chain type single-face etching device or a roller type single-face etching device. At this time, the two etching devices can carry out single-side etching treatment on the first surface of the silicon wafer in a 'water floating' mode. And the etching devices can enable the second surface of the silicon chip to be in a naked state, so that the cleaning liquid supply device can clean the second surface of the silicon chip conveniently.
It should be noted that the etching apparatus may perform a single-side texturing process on the first surface of the silicon wafer, or may perform a single-side matte polishing process on the first surface of the silicon wafer, and is not limited thereto. It is within the scope of the embodiments of the present invention to etch the first side of the silicon wafer to remove at least a portion of the first side of the silicon wafer. The etching liquid used by the etching device can be a first alkali liquid or a first acid liquid.
When the etching device is a roller type single-side etching device, the etching device comprises an etching groove for containing etching liquid and a spiral deep groove roller positioned in the etching groove. The groove depth of the spiral deep groove roller is 0.8 mm-1.3 mm, and the groove interval of the spiral deep groove roller is 1.2 mm-1.8 mm; part of the spiral deep groove roller protrudes out of the etching groove. The part of the spiral deep groove roller protrudes out of the etching groove, which means that the top surface of the spiral deep groove roller is positioned outside the etching groove. Specifically, the distance of the top surface of the spiral deep groove roller protruding out of the etching groove can be 0.5 mm-5 mm. Illustratively, the groove depth of the spiral deep groove roller of the etching device may be 0.8mm, 0.85mm, 0.9mm, 0.95mm, 1.0mm, 1.07mm, 1.1mm, 1.16mm, 1.2mm, etc. The groove pitch of the spiral dark grass roller can be 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm and the like. For example, the top surface of the spiral deep groove roller may protrude the etched groove by a distance of 0.5mm, 0.6mm, 0.8mm, 1.0mm, 2mm, 3mm, 4mm, 5mm, etc.
Based on the roller type single-side etching device, when the first side of the silicon wafer is in contact with the spiral deep groove roller, part of the first side of the silicon wafer protrudes out of the structure of the etching groove, so that the second side of the silicon wafer can be prevented from being in contact with etching liquid in the etching groove, and single-side etching treatment on the silicon wafer can be realized. And when the groove depth of the spiral deep groove roller is in the range, the spiral deep groove roller can carry enough etching liquid to contact with the first surface of the silicon wafer under the action of liquid tension, so that a better etching effect is achieved. When the groove spacing of the spiral deep groove roller is in the range, the groove spacing is proper, and the etching liquid in two adjacent spiral deep grooves can ensure that the whole first surface of the silicon wafer is in contact with the etching liquid under the action of liquid tension, so that a better etching effect is achieved.
When the etching device is a chain type single-sided etching device, the etching device can adopt a chain type single-sided etching device which can realize single-sided etching treatment in the prior art, and the embodiment of the invention is not particularly limited.
The etching device is provided with a heating assembly for heating etching liquid. At the moment, the heating component can heat the etching liquid in the etching device, so that the temperature of the etching liquid is increased, and the reaction temperature of etching reaction can be increased when the etching liquid is contacted with the first surface of the silicon wafer. Based on the structure, the heating component can improve the etching efficiency and the working efficiency on the basis of not damaging the existing structure (pn junction and the like) of the silicon chip. For example, when the etching apparatus is a roller type single-sided etching apparatus, the heating unit may be disposed on the etching groove. At this time, the heating assembly directly heats the etching liquid in the etching tank. The heating assembly may also be provided on the water tub. The bucket provides water as a solvent for the etching tank. At this time, the water supplied to the etching tank is hot water, and the etching liquid has a higher temperature after the hot water is mixed with other components of the etching liquid.
The heating assembly may be a resistance heating coil, an electromagnetic induction heating device, a gas heating device, or the like. In any heating manner, the embodiment of the present invention is not particularly limited as long as the purpose of heating the etching solution can be achieved.
The cleaning liquid supply device may be a spray device, an inkjet printing device, or a coating device. The devices can conveniently and controllably supply cleaning fluid to the second side of the silicon wafer. By controlling the cleaning liquid supply device, the cleaning process can be controlled, and the process quality is improved. Illustratively, when the cleaning liquid supply device is a spraying device, the spraying device is positioned above the second surface of the silicon wafer and sprays the cleaning liquid onto the second surface of the silicon wafer, so that the cleaning liquid cleans the second surface of the silicon wafer. When the cleaning liquid supply device is an ink-jet printing device, an ink-jet head of the ink-jet printing device ejects the cleaning liquid onto the second surface of the silicon wafer. The cleaning liquid used by the cleaning liquid supply device can be a second alkali liquid or a second acid liquid described below.
In order to realize that the etching device carries out single-side etching treatment on the first surface of the silicon wafer and the cleaning liquid supply device carries out cleaning treatment on the second surface of the silicon wafer simultaneously, the cleaning liquid outlet of the cleaning liquid supply device can be positioned above the etching device. At this time, the silicon wafer is positioned between the cleaning liquid supply device and the etching device. The cleaning liquid supply device can conveniently supply the cleaning liquid to the second surface of the silicon wafer below. Meanwhile, the etching device positioned below can conveniently carry out single-side etching treatment on the first surface of the silicon wafer. The arrangement mode can reduce the construction difficulty of the processing system of the silicon wafer and improve the practicability of the processing system.
The silicon wafer bearing mechanism is mainly used for bearing a silicon wafer. The silicon wafer support mechanism may be a structure independent of the etching apparatus and the cleaning solution supply apparatus, such as a chain conveyor, a hanger, and the like. The silicon wafer carrying mechanism can also be integrated with the etching device or with the cleaning liquid supply device. For example, the silicon wafer bearing mechanism can be a chain type silicon wafer transmission mechanism in a chain type single-sided etching device. For another example, the silicon wafer bearing mechanism can also be a spiral deep groove roller in a roller type single-sided etching device.
It should be understood that the silicon wafer processing system may also include a liquid storage device. The reservoir may include at least one buffer cartridge. For example, the liquid storage device comprises two buffer boxes, wherein the first buffer box stores etching liquid, and the second buffer box stores cleaning liquid. Of course, the liquid storage device can also be arranged in other ways. For example, the solute and solvent components of the etching solution and the cleaning solution are stored separately. For example, when the etching solution and the cleaning solution have the same solute and different concentration and temperature, the liquid storage device may include three buffer cartridges. Wherein, the first buffer box stores the etching solution and the solute of the cleaning solution. The second buffer memory box stores water for the etching liquid, and the second buffer memory box can be provided with a heating assembly to heat the etching liquid indirectly, so that the set etching liquid temperature is realized. The third buffer cartridge stores water for the cleaning solution.
The processing system can also comprise a pre-etching device and a silicon wafer transmission line, wherein the pre-etching device is used for pre-etching the first surface of the silicon wafer. The silicon wafer bearing mechanism of the processing system is positioned on the silicon wafer transmission line, and the pre-etching device is positioned in the front of the etching device. At the moment, the pre-etching device can pre-etch the first surface of the silicon wafer, so that the follow-up single-surface etching treatment is facilitated, and the working efficiency and the working quality of the single-surface etching treatment are improved. The silicon wafer transmission line can carry silicon wafers to circulate among different processing devices. The silicon wafer transmission line can be a conveyor belt and the like, and the specific structure of the silicon wafer transmission line is not limited as long as the silicon wafer transmission can be carried.
The pre-etching apparatus may be disposed before the etching apparatus and the cleaning solution supply apparatus. So that the conveyed silicon wafer is firstly processed in the pre-etching device and then conveyed to the etching device and the cleaning liquid supply device.
The pre-etching device can also be a chain type single-sided etching device or a roller type single-sided etching device. For example, when the etching apparatus performs single-sided etching on the first side of the silicon wafer by using an alkaline solution, the pre-etching apparatus may perform single-sided etching on the first side of the silicon wafer by using an acidic solution. The pre-etching device can also be used for carrying out single-side etching on the first side of the silicon wafer by using an alkaline solution different from that of the etching device.
The embodiment of the invention also provides a silicon wafer processing method. The processing method of the silicon wafer applies the processing system with the etching device and the cleaning liquid supply device. The silicon wafer processing method comprises the following steps: carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid; and when the first surface of the silicon wafer is subjected to single-surface etching treatment by using the etching liquid, supplying a cleaning liquid to the second surface of the silicon wafer, so that the cleaning liquid cleans the second surface of the silicon wafer.
In practical applications, the first surface of the silicon wafer may be a back surface of the silicon wafer, and at this time, the second surface of the silicon wafer is a front surface of the silicon wafer. The first surface of the silicon wafer may also be the front surface of the silicon wafer, in which case the second surface is the back surface of the silicon wafer.
The above-mentioned supplying the cleaning liquid to the second surface of the silicon wafer when the etching liquid is used to perform the single-side etching treatment on the first surface of the silicon wafer means supplying the cleaning liquid to the second surface of the silicon wafer after the single-side etching treatment is started and before the single-side etching treatment is completed, that is, during the single-side etching treatment. Specifically, the cleaning solution may be continuously provided to the second surface of the silicon wafer in the whole process of the single-side etching treatment, or the cleaning solution may be provided to the second surface of the silicon wafer in a certain time period or several time periods of the single-side etching treatment.
The single-side etching treatment can be a single-side texturing treatment and can also be a single-side suede polishing treatment. At this time, the second surface of the silicon wafer may be cleaned while the first surface of the silicon wafer is subjected to a single-side texturing treatment or a single-side texturing polishing treatment. Meanwhile, the processing method of the silicon wafer can shorten the manufacturing period of the solar cell and improve the production efficiency, and in the single-side etching process, the cleaning agent is provided for the second side of the silicon wafer, so that the cleaning agent can be attached to the second side of the silicon wafer. Based on this, the damage of the etching liquid to the second surface of the silicon chip due to abnormal working conditions such as splashing can be reduced, and the effect of protecting the second surface structure of the silicon chip is further achieved.
The equipment used for the single-side etching treatment is the etching equipment recorded in the silicon wafer processing system. The etching liquid used for the single-sided etching treatment can be first alkali liquid or first acid liquid.
In practical application, the solute of the first alkali solution may include one or both of KOH and NaOH. For example, the solute of the first alkali solution may be KOH, NaOH, KOH and NaOH. The mass concentration of the first alkali liquor can be 3-6%. For example, the mass concentration of the first alkali solution may be 3%, 3.5%, 4%, 4.6%, 5%, 5.8%, 6%, etc. The temperature of the first alkali liquor can be 45-75 ℃. For example, the temperature of the primary alkali solution can be 45 deg.C, 48 deg.C, 50 deg.C, 52 deg.C, 55 deg.C, 60 deg.C, 66 deg.C, 70 deg.C, 72 deg.C, 75 deg.C, etc. The first alkali liquor has proper temperature and mass concentration, and when the first alkali liquor is used for single-side etching of the first surface of the silicon wafer, the etching rate is high. Moreover, the single-side etching treatment is carried out by using the alkali liquor, so that the problem of discharging a large amount of nitrogen in the etching process can be avoided, the difficulty in treating the waste liquid of the single-side etching process is reduced, the environmental protection cost is saved, and the environmental friendliness is improved. As shown in fig. 2, when the single-side etching treatment is a single-side suede polishing treatment, the first alkali solution can rapidly remove the suede structure of the first side to form a microstructure similar to a square, so as to improve the light reflectivity and the flatness of the first side, and further improve the passivation effect and the short-circuit current of the manufactured battery piece. When the single-side etching treatment is the single-side texturing treatment, the first alkali liquor has a higher etching rate, so that a uniform and regular textured structure can be formed on the first side of the silicon wafer.
In practical application, the solute of the first acid solution can be HF and HNO3、H2SO4One or more of (a). The mass concentration of the first acid liquid can be 8-58%. For example, the mass concentration of the first acid solution may be 8%, 10%, 15%, 20%, 30%, 40%, 46%, 50%, 54%%, 58% and the like.
Taking a roller type single-sided etching device as an example, when single-sided etching is carried out, a first alkali solution or a first acid solution is contained in an etching groove, the first side of a silicon wafer is contacted with the top surface of a spiral deep groove roller, and the silicon wafer is contacted with the first alkali solution or the first acid solution in the etching groove in the processes of transmission and movement along with the rotation of the spiral deep groove roller, so that the single-sided etching is completed.
The above-mentioned manner of supplying the cleaning liquid to the second surface of the silicon wafer may be a shower manner, an inkjet printing manner, or a coating manner. Correspondingly, the equipment for supplying the cleaning liquid to the second surface of the silicon wafer can be a spraying device, an ink-jet printing device and a coating device.
The cleaning solution can be a second alkali solution or a second acid solution. The solute of the second alkali liquor can comprise one or two of KOH and NaOH. The mass concentration of the second alkali liquor can be 3-5%. For example, the mass concentration of the second alkali solution may be 3%, 3.4%, 3.8%, 4%, 4.2%, 4.5%, 4.8%, 5%, etc. The temperature of the second alkali liquor can be 18-24 ℃. For example, the temperature of the second alkali solution may be 18 ℃, 19 ℃, 20 ℃, 21 ℃, 22 ℃, 23 ℃, 24 ℃ and the like. At the moment, the concentration of the second alkali liquor is low, the temperature is low, and slight chemical etching can be carried out on the second surface of the silicon wafer so as to achieve the purposes of cleaning and removing the porous silicon. When the mass concentration and the temperature of the second alkali liquor are within the range, the chemical etching effect of the second alkali liquor is proper, so that the silicon wafer cleaning agent not only has good effects of cleaning and removing porous silicon, but also can avoid damaging the functional structure of the second surface of the silicon wafer.
The solute of the second acid solution may comprise HF and O3The mass concentration of HF in the second acid solution is 10-18%, and O in the second acid solution3The mass concentration of (A) is 12ppm-20 ppm. For example, the mass concentration of HF in the second acid solution can be 10%, 12%, 12.6%, 13%, 15%, 17%, 17.5%, 18%, etc.; o is3The mass concentration of (B) may be 12ppm, 13ppm, 13.8ppm, 14ppm, 15ppm, 16ppm, 17ppm, 18ppm, etc. The ozone has strong capability of removing impurities and is matched with hydrofluoric acidThe cleaning agent can play a good cleaning role and reduce impurity residues.
In practical application, when the second surface of the silicon wafer is cleaned, the silicon wafer is positioned in the etching device, and the first surface of the silicon wafer faces the etching device. The cleaning liquid supply device supplies cleaning liquid to the second surface of the silicon chip in a spraying, ink-jet printing, coating and other modes. And after contacting the second surface of the silicon wafer, the cleaning liquid chemically reacts with the second surface of the silicon wafer to remove the porous silicon on the second surface of the silicon wafer or clean pollutants on the second surface of the silicon wafer.
The etching solution and the cleaning solution may have the same or different acid-base properties. When the etching solution and the cleaning solution have the same acid-base property, both the etching solution and the cleaning solution can be acid liquids. For example, the etching solution is a first acid solution, and the cleaning solution is a second acid solution. When the acid-base property of the etching liquid and the cleaning liquid is the same, the etching liquid and the cleaning liquid can be both alkaline liquid. For example, the etching solution is a first alkali solution, and the cleaning solution is a second alkali solution. When the acid-base properties of the etching solution and the cleaning solution are the same, the interference between different types of chemical reagents can be reduced, and the reliability of a single-sided etching process and a cleaning process is improved.
When the solutes of the etching solution and the cleaning solution are the same, the cleaning solution can be supplemented to the etching solution after cleaning the second surface of the silicon wafer. At this time, on one hand, the waste of solute in the cleaning solution can be avoided, and on the other hand, the etchant can be supplemented timely and conveniently. Based on this, can material saving, reduce cost. For example, when the first alkali solution as the etching solution is a KOH solution and the second alkali solution as the cleaning solution is also a KOH solution, after the upper cleaning solution supply device supplies the second alkali solution to the lower silicon wafer, a part of the second alkali solution contacts the silicon wafer, and the excess second alkali solution falls into the etching device and is supplemented to the etching solution.
When the etching solution is the first alkali solution, the first surface of the silicon wafer can be pre-etched by using the third acid solution before the single-side etching treatment is performed on the first surface of the silicon wafer by using the etching solution. The pre-etching device can adopt a chain type single-side etching device or a roller type single-side etching device. The third acid solution used for pre-etching comprises one or more of hydrofluoric acid, nitric acid and sulfuric acid, and the concentration of the third acid solution can be (8)% to (58)%. For example, the concentration of the third acid solution may be 8%, 10%, 12%, 15%, 20%, 24%, 30%, 36%, 40%, 44%, 48%, 50%, 53%, 58%, or the like. At this time, the third acid solution can slightly corrode the first surface of the silicon wafer, so that a primary etching effect is obtained. And the third acid solution reacts with the first surface of the silicon wafer, so that a structural layer which is easy to react with the first alkali solution can be formed on the first surface of the silicon wafer, the first surface of the silicon wafer is etched by the first alkali solution, the etching efficiency of the first alkali solution is improved, and a required structure is obtained.
In practical application, the first surface of the silicon wafer can face the pre-etching device, the silicon wafer can be placed on the pre-etching device, and the third acid liquid in the pre-etching device is used for carrying out single-surface etching on the first surface of the silicon wafer so as to achieve the purpose of pre-etching. Subsequently, the silicon wafer is transported to the etching apparatus and the cleaning liquid supply apparatus.
The embodiment of the invention also provides a manufacturing method of the solar cell. The manufacturing method of the solar cell comprises the silicon wafer processing method. Taking a p-type crystalline silicon solar cell as an example, the manufacturing method of the solar cell comprises the following steps:
texturing: the pyramid suede is formed, the reflection of the light beam is reduced, and the light can be utilized for multiple times. By applying the silicon wafer processing system and the silicon wafer processing method, the front side of the silicon wafer is etched to form a pyramid suede on the front side, and meanwhile, the back side of the silicon wafer is cleaned to form the silicon wafer with a single suede.
Diffusion: and (3) performing a thermal diffusion process by adopting a thermal diffusion furnace and a phosphorus oxychloride liquid source, and diffusing N-type impurities on one side of the P-type silicon wafer with the textured surface to form a PN junction so as to achieve a proper doping concentration.
Selective emitter drive (SE): and (3) taking phosphosilicate glass (PSG) formed in the diffusion step as a phosphorus source, and pushing the PSG into the silicon wafer according to the metallization pattern in a laser ablation mode to form the heavily-doped selective color generating agent.
Etching: and removing PN junctions on the back and the edge by adopting an acid polishing process to achieve upper and lower insulation. And cleaning the front side of the silicon wafer to remove the porous silicon.
Annealing: and forming silicon dioxide on the surface of the silicon wafer in a high-temperature oxidation mode to passivate surface defects.
Back passivation: and forming a back passivation layer and forming field passivation on the back.
Front passivation: forming hydrogen-containing silicon nitride, passivating the front surface of the silicon wafer and reducing the reflectivity.
Finally, printing an electrode on the silicon chip through screen printing, and forming ohmic contact after sintering.
The embodiment of the invention also provides another manufacturing method of the solar cell. The manufacturing method of the solar cell is basically the same as the method, and the difference is that:
in the texturing process, a double-sided texturing process is adopted, and the two sides of the silicon wafer are both provided with textured surfaces.
In the etching process, the silicon wafer processing system and the silicon wafer processing method are adopted to etch the back side of the silicon wafer, remove PN junctions on the back side and polish the suede on the back side. And simultaneously, cleaning the front surface of the silicon wafer to remove the porous silicon.
The embodiment of the invention provides a solar cell. The solar cell is manufactured by the manufacturing method of the solar cell. The advantages of the solar cell can be referred to the advantages of the above-mentioned method for manufacturing a solar cell, which will not be described herein.
While the invention has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
While the invention has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations can be made thereto without departing from the spirit and scope of the invention. Accordingly, the specification and figures are merely exemplary of the invention as defined in the appended claims and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (15)
1. A system for processing a silicon wafer, the system comprising:
the etching device is used for carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid;
the cleaning solution supply device is used for supplying a cleaning solution to the second surface of the silicon wafer when the first surface of the silicon wafer is subjected to single-surface etching treatment by using an etching solution, and the cleaning solution is used for cleaning the second surface of the silicon wafer;
and the silicon wafer bearing mechanism is used for bearing a silicon wafer, and the etching device and the cleaning liquid supply device are respectively positioned at two sides of the silicon wafer bearing mechanism.
2. The silicon wafer processing system as set forth in claim 1, wherein the cleaning liquid outlet of the cleaning liquid supply means is located above the etching means; and/or the cleaning liquid supply device is selected from a spraying device, an ink-jet printing device and an application device.
3. The silicon wafer processing system of claim 1, wherein the etching apparatus is selected from the group consisting of a chain type single-sided etching apparatus and a roll type single-sided etching apparatus.
4. The silicon wafer processing system according to claim 3, wherein when the etching apparatus is a roller type single-sided etching apparatus, the etching apparatus comprises an etching groove for containing an etching liquid and a spiral deep groove roller positioned in the etching groove, the groove depth of the spiral deep groove roller is 0.8mm to 1.3mm, and the groove pitch of the spiral deep groove roller is 1.2mm to 1.8 mm; and part of the spiral deep groove roller protrudes out of the etching groove.
5. The silicon wafer processing system as claimed in any one of claims 1 to 4, wherein a heating unit for heating the etching liquid is provided on the etching apparatus.
6. The silicon wafer processing system according to any one of claims 1 to 4, further comprising a pre-etching device for pre-etching the first surface of the silicon wafer and a silicon wafer transmission line, wherein the silicon wafer carrying mechanism of the processing system is located on the silicon wafer transmission line, and the pre-etching device is located in front of the etching device.
7. A method for processing a silicon wafer, characterized in that a processing system having an etching apparatus and a cleaning liquid supply apparatus is applied, the method comprising:
carrying out single-side etching treatment on the first surface of the silicon wafer by using etching liquid;
when the etching liquid is used for carrying out single-side etching treatment on the first surface of the silicon wafer, cleaning liquid is provided for the second surface of the silicon wafer, so that the cleaning liquid can clean the second surface of the silicon wafer.
8. The method for processing the silicon wafer according to claim 7, wherein the single-side etching treatment is a single-side texturing treatment or a single-side texturing polishing treatment.
9. The silicon wafer processing method according to claim 7, wherein the etching solution is a first alkali solution, the solute of the first alkali solution comprises one or two of KOH and NaOH, the mass concentration of the first alkali solution is 3% -6%, the temperature of the first alkali solution is 45-75 ℃, or,
the etching solution is first acid solution, and solutes of the first acid solution are HF and HNO3、H2SO4The mass concentration of the first acid solution is 8-58%.
10. The method for processing the silicon wafer according to any one of claims 7 to 9, wherein the cleaning solution is a second alkali solution, the solute of the second alkali solution comprises one or two of KOH and NaOH, the mass concentration of the second alkali solution is 3% to 5%, and the temperature of the second alkali solution is 18 ℃ to 24 ℃; or the like, or, alternatively,
the cleaning solution is a second acid solution, the solute of the second acid solution comprises HF and O3, the mass concentration of HF in the second acid solution is 10-18%, and O in the second acid solution3The mass concentration of (A) is 12ppm-20 ppm.
11. The silicon wafer processing method according to any one of claims 7 to 9, wherein the etching solution and the cleaning solution are both acidic solutions, or the etching solution and the cleaning solution are both alkaline solutions; and/or the presence of a gas in the gas,
and when the solutes of the etching solution and the cleaning solution are the same, the cleaning solution cleans the second surface of the silicon wafer and then supplements the second surface into the etching solution.
12. The silicon wafer processing method according to any one of claims 7 to 9, wherein when the etching solution is a first alkali solution, before the etching solution is used to perform single-side etching on the first surface of the silicon wafer, the silicon wafer processing method further comprises: and pre-etching the first surface of the silicon wafer by using a third acid solution, wherein the third acid solution comprises one or more of hydrofluoric acid, nitric acid and sulfuric acid, and the concentration of the third acid solution is 8-58%.
13. The method for processing a silicon wafer according to any one of claims 7 to 9, wherein the first surface of the silicon wafer is a back surface of the silicon wafer, and the second surface of the silicon wafer is a front surface of the silicon wafer; or the first surface of the silicon wafer is the front surface of the silicon wafer, and the second surface of the silicon wafer is the back surface of the silicon wafer.
14. A method for manufacturing a solar cell, comprising the method for treating the silicon wafer according to any one of claims 7 to 13.
15. A solar cell produced by the method for producing a solar cell according to claim 14.
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