CN112908807A - Photoelectric cathode and application thereof - Google Patents
Photoelectric cathode and application thereof Download PDFInfo
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- CN112908807A CN112908807A CN202110040605.3A CN202110040605A CN112908807A CN 112908807 A CN112908807 A CN 112908807A CN 202110040605 A CN202110040605 A CN 202110040605A CN 112908807 A CN112908807 A CN 112908807A
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- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 6
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
The invention relates to the technical field of photocathodes, in particular to a photocathode and application thereof. The invention provides a photocathode, which comprises a photoelectric emission material layer, an inner surface antireflection film, a light incidence window and an outer surface antireflection film which are sequentially stacked; the inner surface antireflection film comprises a high-refractive-index material layer and a low-refractive-index material layer which are stacked; the number of layers of the inner surface antireflection film is more than or equal to 2; the difference between the refractive index of the high refractive index material layer and the refractive index of the low refractive index material layer is more than or equal to 0.2; the photoelectric emission material of the photoelectric emission material layer comprises Sb element and/or Te element. The photoelectric cathode has a high anti-reflection effect in a wide wave band or a specific wave band.
Description
Technical Field
The invention relates to the technical field of photocathodes, in particular to a photocathode and application thereof.
Background
The response wave band of the Sb or Te containing photocathode comprises an ultraviolet wave band to a near infrared wave band, the Sb or Te containing photocathode is formed by directly depositing a photoelectric emission material on a substrate under a vacuum condition, and the Sb or Te containing photocathode has the advantages of simple process, low manufacturing cost, long service life, response time period, suitability for various special environments and the like, has the irreplaceable advantages of other cathodes, has wide application in the fields of high-energy physics, ultra-fast imaging, low-light night vision, low-light detection, photon counting and the like, and is divided into a transmission type and a reflection type according to the incident direction of light.
For the transmission-type photocathode, the electron emission direction is consistent with the light incidence direction, and the signal light firstly penetrates through the substrate layer (namely the light incidence window of the transmission-type photocathode); then, after the reflection is carried out on the air/light incidence window interface and the light incidence window/cathode material interface, the transmitted signal light is absorbed in the photoelectric emission material layer to generate photoelectrons, and finally the photoelectrons are emitted to vacuum at a certain probability. Wherein, because the Sb-containing cathode and the Te-containing photocathode have high refractive indexes, the light reflectivity loss at the interface of an incidence window/cathode material reaches about 10-30% for the Sb-containing cathode and the Te-containing transmission cathode, so that the quantum efficiency of the cathode can not be further improved, and the application of the cathode is limited.
In order to improve the quantum efficiency, one of the common approaches is to add an antireflection film (some are called as an antireflection film) between the light incident window and the photoelectric emission material, and to improve the antireflection effect of the signal light by using the antireflection film, which is mainly realized by reducing the light reflectivity through the antireflection film. When the light reflection is reduced, the light energy that has passed through the antireflection film and reached the photoemissive material increases according to the conservation of energy, thereby improving the light absorption rate and quantum efficiency of the cathode. The photocathode antireflection film disclosed in U.S. Pat. No. US325425a1 and chinese patent with application number CN201911020021.9 can realize antireflection for specific wavelengths, and needs to satisfy special conditions: 1. thickness of antireflection film equal to
Wherein n is the refractive index of the antireflection film, and λ is the antireflection vacuum wavelength; 2. permeability increasing Condition
Good anti-reflection near a specific wavelength can be realized only when the refractive index of the anti-reflection film is close to n, wherein n1，n2Respectively, the refractive index of the light entrance window and the photocathode material. However, they can only satisfy the anti-reflection of specific wavelength and nearby wave band, but notThe further anti-reflection of wider wave bands can be realized, and especially the enhancement of the response of the wide wave bands such as a multi-alkali cathode is limited; at the same time, since n1，n2Is certain, so the anti-reflection film material capable of meeting the anti-reflection condition is greatly limited. The antireflection films used in Chinese patents with application numbers CN200710305894 and CN201010157693 are BeO and La respectively2O3The multilayer film mainly composed of the high-refractive-index mixed crystal material greatly improves the quantum efficiency of the cathode; however, the refractive index of the two anti-reflection film materials is high, and the anti-reflection width of the response waveband is small, so that the selection of the anti-reflection materials and the width of the anti-reflection waveband are limited, and the absorptivity and quantum efficiency of the whole response waveband still have a space for improvement. The above patents all utilize an antireflection film made of a high refractive index material to realize the antireflection effect of signal light, but no low refractive index material is involved, so the antireflection effect and the width of an antireflection wave band are limited, and the overall response performance of the cathode cannot be further improved.
Therefore, how to improve the anti-reflection effect of the photocathode in a wide waveband is a problem to be further solved.
Disclosure of Invention
The invention aims to provide a photocathode and application thereof, wherein the photocathode has a high anti-reflection effect in a wide wave band or a specific wave band.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a photocathode, which comprises a photoelectric emission material layer, an inner surface antireflection film, a light incidence window and an outer surface antireflection film which are sequentially stacked;
the inner surface antireflection film comprises a high-refractive-index material layer and a low-refractive-index material layer which are stacked;
the number of layers of the inner surface antireflection film is more than or equal to 2;
the difference between the refractive index of the high refractive index material layer and the refractive index of the low refractive index material layer is more than or equal to 0.2;
the photoemissive material of the photoemissive material layer includes an Sb element and/or a Te element.
Preferably, the thickness of the inner surface antireflection film is 10nm to 10 μm.
Preferably, when the number of the inner surface antireflection film layers is 2 and the light incidence window is in contact with the low-refractive-index material layer, the difference between the refractive index of the low-refractive-index material layer in contact with the light incidence window and the refractive index of the light incidence window is greater than or equal to 0.2.
Preferably, the low refractive index material in the low refractive index material layer comprises SiO2、AlF3、CeF3、MgF2、LiF、CaF2、LaF3、BaF2、NaF、NdF3、YbF3、SmF3、ThF4And SrF2One or more of them.
Preferably, the high refractive index material in the high refractive index material layer is Al2O3、Si3N4、HfO2Diamond, MgO, ZrO2、AlN、TiN、BiF3、CdS、Ho2O3、In2O3、Nb2O5、Y2O3、Nd2O3、PbCl2、PbF2、Sb2O3、Pr6O11、Gd2O3、Cr2O3、Dy2O3、MnOx、CsBr、CsI、La2O3、BeO、TiO2、SnO2、Bi2O3、CeO2、ZnS、ZnO、Sm2O3And Eu2O3One or more of the above;
the MnOxThe value range of x in the formula is as follows: x is more than or equal to 1 and less than or equal to 2.
Preferably, the thickness of the photoelectric emission material layer is 10-2000 nm.
Preferably, when the photoemissive material in the photoemissive material layer comprises Sb element, the photoemissive material further comprises one or more of K element, Na element, Li element, Cs element, Rb element and Te element;
when the photoelectric emission material in the photoelectric emission material layer comprises Te element, the photoelectric emission material further comprises one or more of K element, Na element, Cs element, Rb element and Sb element.
Preferably, the photoelectric emission material comprises one or more of NaKSbCs, NaKSb, NaLiSb, NaKSbRbCs, KCsSb, RbCsSb, NaSbCs, CsSb, LiCsSb, CsTe, RbTe, KTe, CsTeSb, RbTeCs, KCsTe and KRbTe.
Preferably, the number of layers of the outer surface antireflection film is more than or equal to 1;
each layer of the outer surface antireflection film is made of SiO independently2、SiO、Si3N4、SnO2、HfO2、Al2O3、Bi2O3、AlN、TiN、AlF3、BiF3、CeF3、CeO2、CsBr、CsI、Cr2O3Diamond, Dy2O3、Eu2O3、Gd2O3、Ho2O3、In2O3、Nb2O5、Nd2O3、PbCl2、Pr6O11、Sm2O3、Y2O3、MnOx、ZnO、ZnS、Sc2O3、Sb2O3、BeO、MgO、MgF2、ZrO2、La2O3、La2O5、TiO2、LiF、CaF2、LaF3、BaF2、NaF、Na3AlF6、SrF2、NdF3、PbF2、YbF3、SmF3And ThF4One or more of the above;
the MnOxThe value range of x in the formula is as follows: x is more than or equal to 1 and less than or equal to 2.
The invention also provides the application of the photocathode in the fields of high-energy physics, ultrafast imaging, low-light-level night vision, low-light-level detection and photon counting.
The invention provides a photocathode, which comprises a photoelectric emission material layer, an inner surface antireflection film, a light incidence window and an outer surface antireflection film which are sequentially stacked; the inner surface antireflection film comprises a high-refractive-index material layer and a low-refractive-index material layer which are stacked; the number of layers of the inner surface antireflection film is more than or equal to 2; the difference between the refractive index of the high refractive index material layer and the refractive index of the low refractive index material layer is more than or equal to 0.2; the photoemissive material of the photoemissive material layer includes an Sb element and/or a Te element. According to the invention, the reflectivity of a wide response waveband or a specific response waveband can be greatly reduced by introducing the inner surface antireflection film made of a material with high and low refractive indexes, so that the absorptivity and quantum efficiency of the photocathode are improved, and the application range of the photocathode is further expanded; the working principle of the photocathode is as follows: after signal light sequentially passes through the outer surface antireflection film, the light incident window and the inner surface antireflection film, the signal light sequentially passes through the inner surface antireflection film and the outer surface antireflection film and then enters the photoelectric emission material layer; secondly, after the anti-reflection signal light is absorbed by the photoelectric emission material layer, more photoelectrons are generated; then, the generated photoelectrons are transported to the surface of the photocathode and reach the surface of the photocathode; meanwhile, part of photoelectrons can be diffused towards the anti-reflection direction of the inner surface, and are reflected by the anti-reflection film of the inner surface after being blocked, and the reflected photoelectrons are transported to the surface of the cathode again; finally, all photoelectrons that reach the cathode surface are emitted towards the vacuum with a certain probability, so that a high sensitivity response is obtained.
Therefore, compared with the prior art, the technical method provided by the invention has the following advantages:
1) according to the invention, the high-refractive-index material layer and the low-refractive-index material layer arranged on the inner surface antireflection film can ensure that the photocathode can realize high transmittance of a wide waveband, so that the quantum efficiency of the wide waveband can be improved, and the response sensitivity of the whole waveband is improved;
2) the high refractive index material layer and the low refractive index material layer can be designed to realize free adjustment of the width of a high anti-reflection wave band, so that the flexible adjustment of quantum efficiency of spectral response of different wave bands can be realized according to actual requirements, and the application range is further expanded;
3) the photocathode can form an image intensifier and a photomultiplier tube with high sensitivity or special sensitivity requirements with a dynode (such as a microchannel plate or a dynode), and can further meet the application requirements of special environments such as high-energy physics, high temperature, ultra-wide spectrum, ultraviolet detection and the like.
Drawings
FIG. 1 is a schematic structural view of a photocathode according to the present invention, in which 1-an outer surface antireflection film, 2-a light incident window, 3-an inner surface antireflection film, and 4-a photoelectric emission material layer;
FIG. 2 is a graph comparing the absorption spectra of the photocathode of example 1 with that of a conventional multi-base cathode under the same conditions;
FIG. 3 is a graph comparing the absorption spectra of the photocathode of example 2 with a conventional double base cathode under the same conditions;
FIG. 4 is a graph comparing the absorption spectra of the photocathode described in example 3 with a conventional CsSb cathode under the same conditions.
Detailed Description
The invention provides a photocathode, which comprises a photoelectric emission material layer, an inner surface antireflection film, a light incidence window and an outer surface antireflection film which are sequentially stacked;
the inner surface antireflection film comprises a high-refractive-index material layer and a low-refractive-index material layer which are stacked;
the number of layers of the inner surface antireflection film is more than or equal to 2;
the difference between the refractive index of the high refractive index material layer and the refractive index of the low refractive index material layer is more than or equal to 0.2;
the photoemissive material of the photoemissive material layer includes an Sb element and/or a Te element.
In the present invention, the photocathode may be an incident-type photocathode or a reflective-type photocathode.
The photoelectric cathode provided by the invention comprises a photoelectric emission material layer, wherein the thickness of the photoelectric emission material layer is preferably 10-2000 nm, more preferably 20-1300 nm, and most preferably 30-300 nm. In the present invention, the photoemissive material of the photoemissive material layer includes Sb element and/or Te element; when the photoelectric emission material in the photoelectric emission material layer comprises an Sb element, the photoelectric emission material also preferably comprises one or more of a K element, a Na element, a Li element, a Cs element, an Rb element and a Te element; when the photoemissive material in the photoemissive material layer includes Te element, the photoemissive material also preferably includes one or more of K element, Na element, Cs element, Rb element and Sb element. In the present invention, the photoemissive material more preferably includes one or more of NaKSbCs, NaKSb, nailsb, NaKSbRbCs, KCsSb, RbCsSb, NaSbCs, CsSb, LiCsSb, CsTe, RbTe, KTe, CsTeSb, RbTeCs, KCsTe, and KRbTe. In the invention, when the number of the photoelectric emission material layers is more than or equal to 2, the material of each photoelectric emission material layer is one of the photoelectric emission materials.
The photocathode provided by the invention comprises an inner surface antireflection film, wherein the thickness of the inner surface antireflection film is preferably 10 nm-10 μm, more preferably 20 nm-3 μm, and most preferably 30 nm-2 μm. In the invention, the inner surface antireflection film comprises a high refractive index material layer and a low refractive index material layer which are arranged in a laminated manner; the number of layers of the inner surface antireflection film is more than or equal to 2; the difference value between the refractive index of the high refractive index material layer and the refractive index of the low refractive index material layer is not less than 0.2, preferably not less than 0.3, more preferably not less than 0.4, and most preferably 0.4-1.5.
In the present invention, the selection of the material of the inner surface antireflection film is preferably determined by the photoelectric emission material and the required response band, so as to ensure that the inner surface antireflection film does not cause absorption of signal light or can neglect the absorption of signal light. Since the larger the difference between the refractive indexes of the high-refractive-index material and the low-refractive-index material is, the better the anti-reflection effect of the cathode is, in practical application, the larger the difference between the high refractive index and the low refractive index of the selected material is, the better the high refractive index and the low refractive index of the selected material is, and the material has no absorption or negligible absorption to a signal light wave band.
In the present invention, the low refractive index material in the low refractive index material layer preferably includes SiO2、AlF3、CeF3、MgF2、LiF、CaF2、LaF3、BaF2、NaF、NdF3、YbF3、SmF3、ThF4And SrF2One or more of the above; when the low-refractive-index materials are more than two of the specific choices, the invention does not have any special limitation on the proportion of the low-refractive-index materials in the specific choices, and the low-refractive-index materials are compounded according to any proportion.
In the invention, the high refractive index material in the high refractive index material layer is Al2O3、Si3N4、HfO2Diamond, MgO, ZrO2、AlN、TiN、BiF3、CdS、Ho2O3、In2O3、Nb2O5、Y2O3、Nd2O3、PbCl2、PbF2、Sb2O3、Pr6O11、Gd2O3、Cr2O3、Dy2O3、MnOx、CsBr、CsI、La2O3、BeO、TiO2、SnO2、Bi2O3、CeO2、ZnS、ZnO、Sm2O3And Eu2O3One or more of the above; the MnOxThe value range of x in the formula is as follows: x is more than or equal to 1 and less than or equal to 2; when the high-refractive-index materials are more than two of the specific choices, the invention does not have any special limitation on the proportion of the high-refractive-index materials in the specific choices, and the materials are compounded according to any proportion.
In the invention, the inner surface antireflection film is based on the selected high and low refractive index materials, and the high antireflection rate aiming at the response wave band is obtained through the optimized design of the number of layers and the thickness of each layer of the inner surface antireflection film, thereby realizing higher quantum efficiency. The selection of the high-refractive-index material and the low-refractive-index material, the specific thickness of each layer and the specific number of layers are determined according to the difference between the actual application requirement and the optimization design requirement.
In the invention, the material of the contact layer of the inner surface antireflection film and the photoelectric emission material layer is preferably not TiO2For the purpose of preventing TiO2The layer destroys the photo-emissive material,resulting in an irreversible, substantial reduction in cathode performance, even complete unresponsiveness.
The photocathode provided by the invention comprises a light incidence window. In the present invention, the thickness of the light incident window is preferably 0.5 to 50mm, more preferably 1 to 20mm, and most preferably 2 to 5 mm. In the present invention, the light incident window is preferably borosilicate glass, violet-transmitting glass, quartz glass, fluorine-containing ultraviolet glass, MgF2Light window or Al2O3A gemstone. In the invention, the light incidence window is a supporting substrate of an outer surface antireflection film, an inner surface antireflection film and a photoelectric emission material layer.
In the present invention, when the number of layers of the inner surface antireflection film is 2 and the light entrance window is in contact with the low refractive index material layer, the difference between the refractive index of the low refractive index material layer in contact with the light entrance window and the refractive index of the light entrance window is preferably not less than 0.2.
The photoelectric cathode provided by the invention comprises an outer surface antireflection film, has no requirement on the thickness of the outer surface antireflection film, and is different according to the practical application requirements such as photoelectric emission materials, antireflection wave bands, signal light transmittance requirements and the like. In the invention, each layer of the outer surface antireflection film is made of SiO2、SiO、Si3N4、SnO2、HfO2、Al2O3、Bi2O3、AlN、TiN、AlF3、BiF3、CeF3、CeO2、CsBr、CsI、Cr2O3Diamond, Dy2O3、Eu2O3、Gd2O3、Ho2O3、In2O3、Nb2O5、Nd2O3、PbCl2、Pr6O11、Sm2O3、Y2O3、MnOx、ZnO、ZnS、Sc2O3、Sb2O3、BeO、MgO、MgF2、ZrO2、La2O3、La2O5、TiO2、LiF、CaF2、LaF3、BaF2、NaF、Na3AlF6、SrF2、NdF3、PbF2、YbF3、SmF3And ThF4One or more of the above; the MnOxThe value range of x in (1) is preferably as follows: x is more than or equal to 1 and less than or equal to 2; when the materials of the outer surface antireflection film are more than two of the specific choices, the specific proportion of the specific materials is not limited in any way, and the materials can be mixed according to any proportion.
In the present invention, the material of the outer surface antireflection film is preferably selected by the photoelectric emission material in the photoelectric emission material layer and the required response band, so as to ensure that the outer surface antireflection film does not cause absorption of signal light or can absorb the signal light negligibly.
In the present invention, the method for preparing the photocathode preferably includes the steps of:
and evaporating an outer surface antireflection film on the outer surface of the light incidence window, and depositing a photoelectric emission material layer on the surface of the inner surface antireflection film after evaporating an inner surface antireflection film on the inner surface to obtain the photocathode.
The evaporation method of the present invention is not particularly limited, and may be performed by a process known to those skilled in the art. In the present invention, the deposition is preferably performed under vacuum conditions; the vacuum degree of the vacuum is preferably less than or equal to 10- 4Pa。
The invention also provides the application of the photocathode in the fields of high-energy physics, ultrafast imaging, low-light-level night vision, low-light-level detection and photon counting. The present invention is not limited to any particular application, and may be applied by a method known to those skilled in the art.
The photocathode and its application provided by the present invention will be described in detail with reference to the following examples, but they should not be construed as limiting the scope of the present invention.
Example 1
The photocathode is a NaKSbCs multi-alkali cathode, the structure of which is shown in figure 1, and the photocathode sequentially comprises: an outer surface antireflection film 1, a light incidence window 2, an inner surface antireflection film 3 and a photoelectric emission material layer 4;
the outer surface antireflection film 1: starting from the incident light 2, in turn Si3N4Layer (thickness 16nm), MgF2Layer (thickness 35nm), Si3N4Layer (thickness 32nm), MgF2(thickness: 32nm), Si3N4Layer (thickness 22.7nm) and MgF2(thickness 91.7 nm);
the light entrance window 2: MgF2An optical window (thickness 5 mm);
the inner surface antireflection film 3: starting from the incident light 2, in turn Si3N4Layer (thickness 9nm), MgF2Layer (thickness 44.7nm), Si3N4Layer (thickness 17.4nm), MgF2(thickness 58.3nm) and Si3N4Layer (thickness 36 nm);
the photoelectric emission material layer 4: NaKSbCs (thickness of 200 nm);
the preparation method comprises the following steps:
at MgF2The outer surface of the optical window is sequentially evaporated with Si with the thickness of 16nm3N4Layer of 35nm thick MgF232nm thick Si3N4Layer, 32nm thick MgF222.7nm thick Si3N4Layer and 91.7nm thick MgF2Laminating to obtain an outer surface antireflection film;
at MgF2The inner surface of the optical window is sequentially evaporated with Si with the thickness of 9nm3N4Layer, 44.7nm thick MgF217.4nm thick Si3N4Layer, 58.3nm thick MgF2And 36nm thick Si3N4Laminating to obtain an inner surface antireflection film;
at most 10-4Depositing an Sb film on the inner surface antireflection film under the vacuum condition of Pa (the visible light transmittance is reduced to 70% of the initial state by monitoring, and the deposition is stopped), and then, at the temperature of less than or equal to 10 DEG C-4Simultaneously depositing Na and K (the molar ratio of the Na to the K is preferably 2:1) on the Sb film under the vacuum condition of Pa and the condition of 160 ℃ to obtain Na and K layers (the thickness is 195-199 nm), sequentially and alternately depositing Sb and Cs to enable the photocurrent to reach the maximum value, then enabling the Cs to be excessive, and enabling the current value to fall to the maximum valueAnd stopping the Cs feeding when the maximum value is 80-95 percent to obtain a NaKSbCs layer with the thickness of-200 nm, and gradually cooling to room temperature to obtain the photocathode.
Comparative example 1
Structure of photocathode referring to the structure of the photocathode described in example 1, the only difference is that the inner surface antireflection film is HfO with a thickness of 30nm2No outer surface antireflection film;
fig. 2 is a comparison graph of absorption spectra of the photocathodes obtained in example 1 and comparative example 1, and as can be seen from fig. 2, the photocathode in example 1 has a higher and wider spectral absorption rate in response to a broadband spectrum of 300-850 nm compared with the photocathode in comparative example 1, and the waveband of 300-400 nm is significantly higher than that of comparative example 1, which illustrates that the introduction of the multilayer antireflection film of the present invention enables the antireflection waveband to be further broadened, thereby further improving the spectral sensitivity of the photocathode, and is expected to make the cathode have a wider application.
Example 2
The photoelectric cathode is a NaKSb/KCsSb composite cathode, the structure of which is shown in figure 1, and the structure is as follows in sequence: an outer surface antireflection film 1, a light incidence window 2, an inner surface antireflection film 3 and a photoelectric emission material layer 4;
the outer surface antireflection film 1: starting from the incident light 2, HfO2Layer (thickness 20.7nm), MgF2Layer (thickness 22.6nm), HfO2Layer (thickness 31nm) and MgF2(thickness 77 nm);
the light entrance window 2: clear purple glass (thickness 5 mm);
the inner surface antireflection film 3: starting from the incident light 2, HfO2Layer (thickness 30nm), MgF2Layer (thickness 10.3nm), HfO2Layer (thickness 40.6nm), MgF2Layer (thickness 67nm) and HfO2Layer (thickness 33.2 nm);
the photoelectric emission material layer 4: starting from the inner surface antireflection film 3, a NaKSb layer (the thickness is 30nm) and a KCsSb layer (the thickness is 50nm) are arranged in sequence;
the preparation method comprises the following steps:
preparation method reference example 1, only with the difference that the layersThe kind and thickness of the material are different; and the preparation process of the photoelectric emission material layer comprises the following steps: at most 10-4Depositing an Sb film on the inner surface antireflection film under the vacuum condition of Pa (stopping deposition by monitoring the reduction of the visible light transmittance to 70-80% of the initial state), and then stopping deposition at the temperature of less than or equal to 10 DEG-4The maximum value is reached when Na and K (the molar ratio of the Na to the K is preferably 2:1) are simultaneously deposited on the Sb film under the vacuum condition of Pa and the condition of 160 ℃ to obtain a NaKSb layer (the thickness is 30 nm); and then, sequentially and alternately depositing Sb and K, stopping depositing Sb and K when the photocurrent reaches another maximum value, then depositing Cs metal for surface activation, continuing to feed Cs when the photocurrent reaches the maximum value, stopping feeding Cs when the current value falls to 80-95% of the maximum value to obtain a KCsSb layer (the thickness is-50 nm), and gradually cooling to room temperature to obtain the photocathode.
Comparative example 2
Structure of photocathode referring to the structure of the photocathode described in example 2, the only difference is that the inner surface antireflection film is HfO with a thickness of 30nm2No outer surface antireflection film;
fig. 3 is a comparison graph of absorption spectra of the photocathodes obtained in example 2 and comparative example 2, and as can be seen from fig. 3, the photocathode in example 2 responds to a broad-band spectrum of 300-600 nm, the light absorption rate in the band of 300-480 nm is significantly higher than that of comparative example 2, and the absorption rate at 400nm is 10% higher than that of comparative example 2, which indicates that the photocathode of the present invention has higher spectral sensitivity and is expected to be more widely applied in high-energy physical fields such as meson detection and the like.
Example 3
The photocathode is a CsSb composite cathode, the structure of which is shown in figure 1, and the photocathode sequentially comprises the following components: an outer surface antireflection film 1, a light incidence window 2, an inner surface antireflection film 3 and a photoelectric emission material layer 4;
the outer surface antireflection film 1: starting from the incident light 2, HfO2Layer (thickness 12.8nm), MgF2Layer (thickness 17nm), HfO2Layer (thickness 28.7nm), MgF2(thickness of 15nm) and HfO2Layer (thickness 18nm) and MgF2(thickness 61 nm);
the light entrance window 2: quartz glass (thickness 5 mm);
the inner surface antireflection film 3: starting from the incident light 2, HfO2Layer (thickness 8.3nm), MgF2Layer (thickness 31nm), HfO2Layer (thickness 13.7nm), MgF2Layer (thickness 36.7nm), HfO2Layer (thickness 11.3nm), MgF2Layer (thickness 45.3nm), HfO2Layer (thickness 5.6nm), MgF2Layer (thickness 57nm) and HfO2Layer (thickness 23.5 nm);
the photoelectric emission material layer 4: a CsSb layer (thickness 100 nm);
the preparation method comprises the following steps:
the preparation method is as in example 2, and the difference is only in the kinds and thicknesses of the materials of the layers; and the preparation process of the photoelectric emission material layer comprises the following steps: at most 10-4And depositing Cs and Sb alternately under the vacuum condition of Pa and the condition of 160 ℃ to enable the photocurrent to reach the maximum value, then continuing to feed Cs, stopping feeding Cs when the current value falls to 80-95% of the maximum value to obtain a CsSb layer (the thickness is 100nm), and gradually cooling to the room temperature to obtain the photocathode.
Comparative example 3
Structure of photocathode referring to the structure of the photocathode described in example 3, the only difference is that the inner surface antireflection film is HfO with a thickness of 30nm2No outer surface antireflection film;
fig. 4 is a comparison graph of absorption spectra of the photocathodes obtained in example 3 and comparative example 3, and it can be seen from fig. 4 that the photocathode in example 3 responds to a broadband spectrum of 300-650 nm, and quantum efficiency has broadband absorption enhancement characteristics, which are superior to the photocathode in comparative example 3 as a whole. The photocathode in example 3 is shown to have a wider spectral response band, higher spectral sensitivity, and better performance, and is expected to be applied to fields with higher performance requirements.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A photoelectric cathode is characterized by comprising a photoelectric emission material layer, an inner surface antireflection film, a light incidence window and an outer surface antireflection film which are sequentially stacked;
the inner surface antireflection film comprises a high-refractive-index material layer and a low-refractive-index material layer which are stacked;
the number of layers of the inner surface antireflection film is more than or equal to 2;
the difference between the refractive index of the high refractive index material layer and the refractive index of the low refractive index material layer is more than or equal to 0.2;
the photoemissive material of the photoemissive material layer includes an Sb element and/or a Te element.
2. The photocathode of claim 1, wherein the internal surface antireflection film has a thickness of 10nm to 10 μm.
3. The photocathode according to claim 1 or 2, wherein when the number of layers of the inner surface antireflection film is 2 and the light incidence window is in contact with the low refractive index material layer, a difference between a refractive index of the low refractive index material layer in contact with the light incidence window and a refractive index of the light incidence window is not less than 0.2.
4. The photocathode of claim 1, 2, or 3, wherein the low index material in the low index material layer comprises SiO2、AlF3、CeF3、MgF2、LiF、CaF2、LaF3、BaF2、NaF、NdF3、YbF3、SmF3、ThF4And SrF2One or more of them.
5. The photocathode of claim 1, wherein the high refractive index material in the high refractive index material layer is Al2O3、Si3N4、HfO2Diamond, MgO, ZrO2、AlN、TiN、BiF3、CdS、Ho2O3、In2O3、Nb2O5、Y2O3、Nd2O3、PbCl2、PbF2、Sb2O3、Pr6O11、Gd2O3、Cr2O3、Dy2O3、MnOx、CsBr、CsI、La2O3、BeO、TiO2、SnO2、Bi2O3、CeO2、ZnS、ZnO、Sm2O3And Eu2O3One or more of the above;
the MnOxThe value range of x in the formula is as follows: x is more than or equal to 1 and less than or equal to 2.
6. The photocathode of claim 1, wherein the thickness of the photoemissive material layer is 10 to 2000 nm.
7. The photocathode of claim 1 or 6, wherein when the photoemissive material in the photoemissive material layer includes an Sb element, the photoemissive material further includes one or more of a K element, a Na element, a Li element, a Cs element, a Rb element, and a Te element;
when the photoelectric emission material in the photoelectric emission material layer comprises Te element, the photoelectric emission material further comprises one or more of K element, Na element, Cs element, Rb element and Sb element.
8. The photocathode of claim 7, wherein the photoemissive material comprises one or more of NaKSbCs, NaKSb, NaLiSb, NaKSbRbCs, KCsSb, RbcSb, NaSbCs, CsSb, LicSb, CsTe, RbTe, KTe, CsTeSb, RbTeCs, KCsTe, and KRbTe.
9. The photocathode of claim 1, wherein the number of layers of the outer surface antireflection film is not less than 1;
each layer of the outer surfaceThe antireflection film is made of SiO2、SiO、Si3N4、SnO2、HfO2、Al2O3、Bi2O3、AlN、TiN、AlF3、BiF3、CeF3、CeO2、CsBr、CsI、Cr2O3Diamond, Dy2O3、Eu2O3、Gd2O3、Ho2O3、In2O3、Nb2O5、Nd2O3、PbCl2、Pr6O11、Sm2O3、Y2O3、MnOx、ZnO、ZnS、Sc2O3、Sb2O3、BeO、MgO、MgF2、ZrO2、La2O3、La2O5、TiO2、LiF、CaF2、LaF3、BaF2、NaF、Na3AlF6、SrF2、NdF3、PbF2、YbF3、SmF3And ThF4One or more of the above;
the MnOxThe value range of x in the formula is as follows: x is more than or equal to 1 and less than or equal to 2.
10. Use of the photocathode of any one of claims 1-9 in the fields of high energy physics, ultrafast imaging, low-light night vision, low-light detection, and photon counting.
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