CN112904931B - Voltage-current conversion circuit and integrated circuit chip - Google Patents

Voltage-current conversion circuit and integrated circuit chip Download PDF

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CN112904931B
CN112904931B CN202110055767.4A CN202110055767A CN112904931B CN 112904931 B CN112904931 B CN 112904931B CN 202110055767 A CN202110055767 A CN 202110055767A CN 112904931 B CN112904931 B CN 112904931B
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voltage
mos transistor
current
current mirror
conversion circuit
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CN112904931A (en
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李纪平
肖知明
赵东艳
原义栋
翟登福
许秋珍
赵知愠
乔彦彬
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Nankai University
State Grid Information and Telecommunication Co Ltd
Beijing Smartchip Microelectronics Technology Co Ltd
Beijing Core Kejian Technology Co Ltd
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Nankai University
State Grid Information and Telecommunication Co Ltd
Beijing Smartchip Microelectronics Technology Co Ltd
Beijing Core Kejian Technology Co Ltd
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
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Abstract

The invention relates to the technical field of integrated circuits, and provides a voltage-current conversion circuit and an integrated circuit chip. The voltage-current conversion circuit comprises a first series resistor, a second series resistor, a first current mirror, a first negative feedback loop and a second negative feedback loop, wherein the first negative feedback loop comprises a first transconductance amplifier and a second current mirror, and the second negative feedback loop comprises a second transconductance amplifier, a third current mirror and a first diode. The voltage-current conversion circuit adopts two negative feedback loops, so that the effective input voltage can be higher than the power supply level and can also be lower than the ground level, namely the input voltage range can be expanded towards the positive power supply rail and the negative power supply rail, the input voltage range is wide, the dynamic range is large, the current obtained by the conversion of the voltage-current conversion circuit is also bidirectional, and the voltage-current conversion circuit can be applied to wider circuits and is suitable for more system conditions.

Description

Voltage-current conversion circuit and integrated circuit chip
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a voltage-current conversion circuit and an integrated circuit chip.
Background
In an integrated circuit, arithmetic operations such as addition, subtraction, multiplication, division, and the like of a voltage are generally implemented by a voltage-current conversion circuit. A voltage to current conversion circuit, or V2I circuit, produces an output current that is linear with respect to the input voltage. The voltage-current conversion circuit can be applied to a continuous-time filter, a variable gain amplifier, a data converter, and the like. The traditional voltage-current conversion circuit changes the voltage-current conversion ratio by setting a resistor, once a voltage signal is converted into a current signal, the addition and subtraction operation of the voltage can be realized by fusing the current signal with polarity, and the multiplication and division operation of the voltage can be realized by a transconductance linear circuit.
The traditional voltage-current converter can be divided into two structural types of current feedback and voltage feedback, and can be divided into three types of pull-up, pull-down and AB output according to the conversion output polarity, and the structural types have advantages and disadvantages respectively. For a voltage feedback structure, the input voltage of the voltage feedback structure takes a ground level or a power supply level as a comparison reference voltage, and the allowable input voltage range is narrow because the common-mode voltage of the amplifier follows the input voltage. For the current feedback configuration, since the active current source needs to maintain a minimum voltage margin, its comparison reference voltage cannot reach ground level or power supply level, but allows a wider input voltage range because its amplifier positive terminal is virtually tied to the reference voltage node. In addition, unless the class AB driving structure is used, the current feedback structure has a problem of insufficient supply current in one output current direction.
Disclosure of Invention
It is an object of the present invention to provide a voltage-to-current converter circuit to overcome the above-mentioned drawbacks of the conventional voltage-to-current converter.
In order to achieve the above object, an embodiment of the present invention provides a voltage-current conversion circuit including: the feedback circuit comprises a first series resistor, a second series resistor, a first current mirror, a first negative feedback loop and a second negative feedback loop, wherein the first negative feedback loop comprises a first transconductance amplifier and a second current mirror, and the second negative feedback loop comprises a second transconductance amplifier, a third current mirror and a first diode; a first end of the first series resistor is connected to a voltage input end, and a second end of the first series resistor is connected with an input node of the first current mirror and a non-inverting input end of the first transconductance amplifier; the inverting input end of the first transconductance amplifier is connected with the input node of the second current mirror, the output end of the first transconductance amplifier is connected with the common node of the second current mirror, the input node of the second current mirror is grounded through the second series resistor, and the output node of the second current mirror is connected with the input node of the first current mirror; the non-inverting input end of the second transconductance amplifier is connected with the first output node of the first current mirror, the output end of the second transconductance amplifier is connected with the common node of the third current mirror, and the input node of the third current mirror is connected with the non-inverting input end of the first transconductance amplifier through the first diode; the second output node of the first current mirror and the output node of the third current mirror are connected to a current output terminal.
Further, the first current mirror comprises a first MOS transistor, a second MOS transistor and a third MOS transistor, and a gate of the first MOS transistor, a gate of the second MOS transistor and a gate of the third MOS transistor are connected to each other and to the second end of the first series resistor; the second current mirror comprises a fourth MOS tube and a fifth MOS tube, and the grid electrode of the fourth MOS tube is connected with the grid electrode of the fifth MOS tube; the third current mirror comprises a sixth MOS tube and a seventh MOS tube, and the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube.
Further, the first transconductance amplifier comprises a first triode and a second triode, and a base of the first triode is connected with a base of the second triode; a collector electrode of the first triode is connected with a drain electrode of the fifth MOS tube, and an emitter electrode of the first triode is connected with a grid electrode of the first MOS tube, a grid electrode of the second MOS tube and a grid electrode of the third MOS tube; and the collector electrode of the second triode is connected with the drain electrode and the grid electrode of the fourth MOS tube, and the emitter electrode of the second triode is connected with the second series resistor.
Further, the second transconductance amplifier includes an eighth MOS transistor, a ninth MOS transistor, and a tenth MOS transistor, a drain of the eighth MOS transistor is connected to a gate of the ninth MOS transistor, and a source of the ninth MOS transistor is connected to a drain of the tenth MOS transistor.
Further, the first negative feedback loop further comprises a thirteenth MOS transistor, and a source of the thirteenth MOS transistor is connected to the base of the first triode and the base of the second triode.
Further, the second negative feedback loop further includes a compensation capacitor and a third series resistor connected in series with the compensation capacitor, the compensation capacitor is connected to the gate of the eighth MOS transistor, and the third series resistor is connected to the drain of the eighth MOS transistor and the gate of the ninth MOS transistor.
Furthermore, the third current mirror further comprises an eleventh MOS transistor and a twelfth MOS transistor, and the grid electrode of the eleventh MOS transistor is connected with the grid electrode of the twelfth MOS transistor; the source electrode of the eleventh MOS tube is connected with the drain electrode of the sixth MOS tube, and the drain electrode of the eleventh MOS tube is connected with the grid electrode of the first MOS tube, the grid electrode of the second MOS tube and the grid electrode of the third MOS tube; and the source electrode of the twelfth MOS tube is connected with the drain electrode of the seventh MOS tube, and the drain electrode of the twelfth MOS tube is connected to the current output end.
Further, the source of the thirteenth MOS transistor is grounded through a second voltage-dividing resistor.
Furthermore, the grid electrode of the eighth MOS tube is connected with a power supply end through a third voltage-dividing resistor; the drain electrode of the eighth MOS tube and the grid electrode of the ninth MOS tube are grounded through a fourth voltage dividing resistor.
The embodiment of the invention also provides an integrated circuit chip which comprises the voltage-current conversion circuit.
The voltage-current conversion circuit provided by the embodiment of the invention adopts two negative feedback loops, so that the effective input voltage can be higher than the power supply level and can also be lower than the ground level, namely, the input voltage range can be expanded towards a positive power supply rail and a negative power supply rail, the input voltage range is wide, the dynamic range is large, the current obtained by the voltage-current conversion circuit is also bidirectional, and the voltage-current conversion circuit can be applied to wider circuits and is suitable for more system conditions. The input voltage of the voltage-current conversion circuit takes the ground level as the reference voltage (the reference voltage is the standard ground level), the reference voltage is not required to be configured additionally, and the defect that the comparison reference voltage cannot reach the ground level or the power level due to the fact that the minimum voltage margin needs to be maintained by the active current source in the traditional current feedback structure is overcome. In addition, the output current of the voltage-current conversion circuit is in direct proportion to the input voltage, the maximum value allowed by power supply can be achieved, and the problem of insufficient power supply is solved.
Additional features and advantages of embodiments of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the embodiments of the invention without limiting the embodiments of the invention. In the drawings:
FIG. 1 is a functional diagram of a voltage-to-current conversion circuit according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a voltage-to-current conversion circuit according to an embodiment of the present invention;
fig. 3 is a test result diagram (oblique line diagram of input voltage and output current) of the voltage-to-current conversion circuit according to the embodiment of the present invention;
fig. 4 is a test result diagram (step input response diagram) of the voltage-to-current conversion circuit according to the embodiment of the present invention;
fig. 5 is a test result diagram (ramp input response diagram) of the voltage-to-current conversion circuit provided by the embodiment of the invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The terms "first," "second," "third," and the like, as used herein, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance. "connected" as used herein is intended to mean an electrical power connection or a signal connection between two components/elements; "coupled" may be a direct connection between two elements, an indirect connection between two elements through an intermediary (e.g., a wire), or an indirect connection between three elements.
Fig. 1 is a functional diagram of a voltage-to-current conversion circuit according to an embodiment of the present invention. As shown in fig. 1, the present embodiment provides a voltage-current conversion circuit, which includes a first series resistor R1AA second series resistor R1BA first current mirror CM1, a first negative feedback loop, and a second negative feedback loop. The first negative feedback loop comprises a first transconductance amplifier GM1 and a second current mirror CM2, and the second negative feedback loop comprises a second transconductance amplifier GM2, a third current mirror CM3, and a first diode D1. First series resistance R1AIs connected to a voltage input terminal VINFirst series resistance R1AIs connected to the input node of the first current mirror CM1 and to the non-inverting input of the first transconductance amplifier GM 1. The inverting input terminal of the first transconductance amplifier GM1 is connected to the input node of the second current mirror CM2, the output terminal of the first transconductance amplifier GM1 is connected to the common node of the second current mirror CM2, and the input node of the second current mirror CM2 is connected through a second series resistor R1BGround, secondThe output node of the current mirror CM2 is connected to the input node of the first current mirror CM 1. The non-inverting input end of the second transconductance amplifier GM2 is connected with the first output node of the first current mirror CM1, and the inverting input end of the second transconductance amplifier GM2 is connected with a voltage VRThe output terminal of the second transconductance amplifier GM2 is connected to the common node of the third current mirror CM3, and the input node of the third current mirror CM3 is connected to the non-inverting input terminal of the first transconductance amplifier GM1 through a first diode D1. The second output node of the first current mirror CM1 and the output node of the third current mirror CM3 are connected to the current output terminal IOUT。
The output current of the voltage-current conversion circuit provided by the present embodiment is the pull-up current IPU0And a pull-down current IPD0From the third current mirror CM3 and the first current mirror CM1, respectively. The first current mirror CM1 has an input current including IREG1、IREG2And IR1Three moieties of which IREG1Is the modulation current of the first negative feedback loop, IREG2Is the modulation current of the second negative feedback loop. The first transconductance amplifier GM1 of the first negative feedback loop has a second series resistance R1BVoltage of (d) and reference voltage V1Is thus passed through the second series resistance R1BIs the output current of the third current mirror CM3 and may be approximately represented as V1/R. The output current of the voltage-current conversion circuit is calculated as follows:
IPU0＝IREG2
IPD0＝IPD1＝IREG1+IREG2+IR1
IOUT＝IPD0-IPU0＝IREG1+IR1
the input voltage V of the voltage-current conversion circuitINMay be below ground level where the first current mirror CM1 will not function properly without the additional input current branch. Thus, the input current I of the first current mirror CM1 is modulated by the second transconductance amplifier GM2 in the second negative feedback loopREG2. In the modulation state, the current I flowing through the first current mirror CM1PD1Always positive and not less than the reference currentIREF. At V onlyINNear or below ground level, the second transconductance amplifier GM2 will only function. When V is under the action of the first diode D1INWhen the value is relatively high, the second transconductance amplifier GM2 may be turned off to save power consumption. If R is1A＝R1BThe calculation of the output current of the voltage-to-current conversion circuit may be further simplified as:
IOUT＝V1/R+(VIN-V1)/R＝VIN/R
it follows that the output current IOUTAnd an input voltage VINProportional to the resistance R and inversely proportional to the resistance R.
The voltage-current conversion circuit provided by the embodiment adopts two negative feedback loops, so that the effective input voltage can be higher than the power level and can also be lower than the ground level, namely, the input voltage range can be expanded towards the positive power supply rail and the negative power supply rail, the input voltage range is wide, the dynamic range is large, the current obtained by the voltage-current conversion circuit is also bidirectional, and the voltage-current conversion circuit can be applied to wider circuits and is suitable for more system conditions. In the voltage-current conversion circuit of the embodiment, the input voltage takes the ground level as the reference voltage (the reference voltage is the standard ground level), and the reference voltage does not need to be configured additionally, so that the defect that the comparison reference voltage cannot reach the ground level or the power level due to the fact that the minimum voltage margin needs to be maintained by the active current source in the traditional current feedback structure is overcome. In addition, the voltage-current conversion circuit according to the present embodiment has a proportional relationship between the output current and the input voltage, and can achieve the maximum value that is allowable for power supply, and thus does not have a problem of insufficient power supply.
Fig. 2 is a circuit diagram of a voltage-to-current conversion circuit according to an embodiment of the present invention. The first MOS transistor M1, the second MOS transistor M2, and the third MOS transistor M3 in fig. 2 correspond to the first current mirror CM1 in fig. 1; the fourth MOS transistor M4 and the fifth MOS transistor M5 correspond to the second current mirror CM2 in fig. 1; the sixth MOS transistor M6 and the seventh MOS transistor M7 correspond to the third current mirror CM3 in fig. 1. Wherein, the grid of the first MOS transistor M1, the grid of the second MOS transistor M2 and the grid of the third MOS transistor M3 are connected with each other and are connected with the first MOS transistor M1Series resistance R1AThe gate of the fourth MOS transistor M4 is connected to the gate of the fifth MOS transistor M5, and the gate of the sixth MOS transistor M6 is connected to the gate of the seventh MOS transistor M7.
The first transistor Q1 and the second transistor Q2 in fig. 2 correspond to the first transconductance amplifier GM1 in fig. 1; the eighth MOS transistor M8, the ninth MOS transistor M9, and the tenth MOS transistor M10 correspond to the second transconductance amplifier GM2 in fig. 1. The base of the first triode Q1 is connected with the base of the second triode Q2, the collector of the first triode Q1 is connected with the drain of the fifth MOS transistor M5, the emitter of the first triode Q1 is connected with the grid of the first MOS transistor M1, the grid of the second MOS transistor M2 and the grid of the third MOS transistor M3, the collector of the second triode Q2 is connected with the drain and the grid of the fourth MOS transistor M4, and the emitter of the second triode Q2 is connected with the second series resistor R35281BAnd (4) connecting. The drain of the eighth MOS transistor M8 is connected to the gate of the ninth MOS transistor M9, and the source of the ninth MOS transistor M9 is connected to the drain of the tenth MOS transistor M10. The gate of the eighth MOS transistor M8 is connected to the power supply terminal through a third voltage dividing resistor R3, and the drain of the eighth MOS transistor M8 and the gate of the ninth MOS transistor M9 are grounded through a fourth voltage dividing resistor R4.
In the present embodiment, the thirteenth MOS transistor M13 corresponds to the first negative feedback loop. The source of the thirteenth MOS transistor M13 is connected to the base of the first transistor Q1 and the base of the second transistor Q2, and the source of the thirteenth MOS transistor M13 is grounded through the second voltage-dividing resistor R2. Compensation capacitor C in fig. 2CAnd a compensation capacitor CCThe third series resistance Rc in series corresponds to the second negative feedback loop. Compensation capacitor CCThe third series resistor Rc is connected to the gate of the eighth MOS transistor M8, and the drain of the eighth MOS transistor M8 and the gate of the ninth MOS transistor M9.
The eleventh MOS transistor M11 and the twelfth MOS transistor M12 in this embodiment also correspond to the third current mirror CM 3. The gate of the eleventh MOS transistor M11 is connected to the gate of the twelfth MOS transistor M12, the source of the eleventh MOS transistor M11 is connected to the drain of the sixth MOS transistor M6, and the drain of the eleventh MOS transistor M11 is connected to the gate of the first MOS transistor M1, the gate of the second MOS transistor M2, and the gate of the third MOS transistor M3; the source electrode of the twelfth MOS tube M12 is connected with the drain electrode of the seventh MOS tube M7, and the twelfth MOS tube M12 is connected to the current output terminal IOUT。
In this embodiment, the low-threshold NMOS transistor and the PMOS transistor form a cascode device to improve matching performance between the current mirrors. The first transconductance amplifier GM1 corresponds to a common base amplifying circuit composed of a first triode Q1 and a second triode Q2, and the second transconductance amplifier GM2 corresponds to a V2I gain circuit composed of an eighth MOS transistor M8, a ninth MOS transistor M9 and a tenth MOS transistor M10. Reference current IREFArranged to pass a modulated current, I, of R3REF＝VGS_M8/R3In which V isGS_M8Is the base to source voltage of the eighth MOS transistor M8. Second series resistance R1BThe voltage on the first negative feedback loop is modulated into a reference voltage V1The loop gain is determined by a common base amplifying circuit composed of Q1 and Q2. The current mirrors formed by M4 and M5 allow Q1 and Q2 to flow almost equal currents. The NMOS transistor M13 provides base current for Q1 and Q2. Since the base currents of Q1 and Q2 are almost equal, they are mirror currents obtained from M4 and M5 and cancel each other out, the pull-down current IPD0Are not affected by their base current. To save power consumption, the bias current flowing into M13 is also the bias current of M10. To attenuate R1BThe load effect of Q1 and Q2 is the NPN transistor because the NPN transistor can obtain higher transconductance than the NMOS transistor under a given base current condition. Preferably, R1BValue ratio Q2 transconductance (1/G)MQ2) Is two orders greater than the reciprocal of (c), such that R1BThe loading effect of (a) is negligible.
The second negative feedback loop controls the current through M1 so that the current of M1 is not lower than the reference current IREFOnly when R is1ACurrent of less than IREFThe second negative feedback loop is active. When R is1ACurrent greater than IREFAnd when the input voltage is high, M8 is fully opened and M9 is truncated and the second negative feedback loop is inactive. In this case power consumption is reduced, and the current flowing through M10 to M7 is equal to the bias current of R2. The gain circuit in fig. 2 is composed of two common-source stage devices M8 and M9. Capacitor CCUsed as a compensation capacitor to help stabilize the feedback loop, the series resistor Rc compensates the feedback loop with MillerThe zero generated is pushed to higher frequencies. Transconductance GM2The following can be calculated:
GM2＝R3·GM8·R4·(GM9//GM10)
the mirrored output currents from M2 and M3 are also modulated to be no greater than IREF. To reduce the DC loading effect at the output node, the cascode device made of M11 and M12 can help cancel the M6 and M7 currents. In this example, by being at V1The node is fed with a trimming current to eliminate the first order error, and the modulation method is that when the input is grounded, the output current I can be exactly offsetOUT。
Fig. 3 is a test result diagram (oblique line diagram of input voltage and output current) of the voltage-to-current conversion circuit according to the embodiment of the present invention;
fig. 4 is a test result diagram (step input response diagram) of the voltage-to-current conversion circuit according to the embodiment of the present invention;
fig. 5 is a test result diagram (ramp input response diagram) of the voltage-current conversion circuit according to the embodiment of the present invention.
As shown in fig. 3, the input voltage and the output current of the voltage-current conversion circuit maintain a good linear relationship. Fig. 4 is a transient response diagram under a step input condition, which shows a stable and reliable step response of the system, the input high and low levels have different voltage polarities, the output current well follows the change of the input level value, and a second negative feedback loop including a transconductance GM2 undergoes state reversal between on and off in the process; when the input voltage is converted from positive level to negative level, the output current reaches the target value before the compensation capacitor CCA short charging time is required. Fig. 5 is a transient response diagram under a ramp input condition, which shows a stable and reliable ramp input response of the system, the input is slowly increased from a negative level to a positive level, the output current well follows the change of the input level, and the modulation states of the pull-up current and the pull-down current are smoothly switched.
The embodiment of the invention also provides an integrated circuit chip which comprises the voltage-current conversion circuit.
While the embodiments of the present invention have been described in detail with reference to the accompanying drawings, the embodiments of the present invention are not limited to the details of the above embodiments, and various simple modifications can be made to the technical solution of the embodiments of the present invention within the technical idea of the embodiments of the present invention, and the simple modifications are within the scope of the embodiments of the present invention.

Claims (10)

1. A voltage-to-current conversion circuit, comprising: the feedback circuit comprises a first series resistor, a second series resistor, a first current mirror, a first negative feedback loop and a second negative feedback loop, wherein the first negative feedback loop comprises a first transconductance amplifier and a second current mirror, and the second negative feedback loop comprises a second transconductance amplifier, a third current mirror and a first diode;
a first end of the first series resistor is connected to a voltage input end, and a second end of the first series resistor is connected with an input node of the first current mirror and a non-inverting input end of the first transconductance amplifier;
the inverting input end of the first transconductance amplifier is connected with the input node of the second current mirror, the output end of the first transconductance amplifier is connected with the common node of the second current mirror, the input node of the second current mirror is grounded through the second series resistor, and the output node of the second current mirror is connected with the input node of the first current mirror;
the non-inverting input end of the second transconductance amplifier is connected with the first output node of the first current mirror, the output end of the second transconductance amplifier is connected with the common node of the third current mirror, and the input node of the third current mirror is connected with the non-inverting input end of the first transconductance amplifier through the first diode;
the second output node of the first current mirror and the output node of the third current mirror are connected to a current output terminal.
2. The voltage-current conversion circuit according to claim 1, wherein the first current mirror comprises a first MOS transistor, a second MOS transistor, and a third MOS transistor, and a gate of the first MOS transistor, a gate of the second MOS transistor, and a gate of the third MOS transistor are connected to each other and to the second end of the first series resistor;
the second current mirror comprises a fourth MOS tube and a fifth MOS tube, and the grid electrode of the fourth MOS tube is connected with the grid electrode of the fifth MOS tube;
the third current mirror comprises a sixth MOS tube and a seventh MOS tube, and the grid electrode of the sixth MOS tube is connected with the grid electrode of the seventh MOS tube.
3. The voltage-to-current conversion circuit of claim 2, wherein the first transconductance amplifier comprises a first transistor and a second transistor, and a base of the first transistor is connected to a base of the second transistor;
a collector of the first triode is connected with a drain of the fifth MOS transistor, and an emitter of the first triode is connected with a grid of the first MOS transistor, a grid of the second MOS transistor and a grid of the third MOS transistor;
and the collector electrode of the second triode is connected with the drain electrode and the grid electrode of the fourth MOS tube, and the emitter electrode of the second triode is connected with the second series resistor.
4. The voltage-current conversion circuit according to claim 3, wherein the second transconductance amplifier comprises an eighth MOS transistor, a ninth MOS transistor and a tenth MOS transistor, a drain of the eighth MOS transistor is connected to a gate of the ninth MOS transistor, and a source of the ninth MOS transistor is connected to a drain of the tenth MOS transistor.
5. The voltage-to-current conversion circuit of claim 3, wherein the first negative feedback loop further comprises a thirteenth MOS transistor, and a source of the thirteenth MOS transistor is connected to the base of the first transistor and the base of the second transistor.
6. The voltage-to-current conversion circuit of claim 4, wherein the second negative feedback loop further comprises a compensation capacitor connected to the gate of the eighth MOS transistor and a third series resistor connected to the drain of the eighth MOS transistor and the gate of the ninth MOS transistor in series with the compensation capacitor.
7. The voltage-current conversion circuit according to claim 2, wherein the third current mirror further comprises an eleventh MOS transistor and a twelfth MOS transistor, and a gate of the eleventh MOS transistor is connected to a gate of the twelfth MOS transistor;
the source electrode of the eleventh MOS tube is connected with the drain electrode of the sixth MOS tube, and the drain electrode of the eleventh MOS tube is connected with the grid electrode of the first MOS tube, the grid electrode of the second MOS tube and the grid electrode of the third MOS tube;
and the source electrode of the twelfth MOS tube is connected with the drain electrode of the seventh MOS tube, and the drain electrode of the twelfth MOS tube is connected to the current output end.
8. The voltage-to-current conversion circuit of claim 5, wherein the source of the thirteenth MOS transistor is grounded through a second voltage-dividing resistor.
9. The voltage-to-current conversion circuit according to claim 4, wherein the gate of the eighth MOS transistor is connected to a power supply terminal through a third voltage-dividing resistor;
the drain electrode of the eighth MOS tube and the grid electrode of the ninth MOS tube are grounded through a fourth voltage dividing resistor.
10. An integrated circuit chip comprising the voltage-to-current conversion circuit of any one of claims 1-9.
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CN107168453B (en) * 2017-07-03 2018-07-13 电子科技大学 A kind of fully integrated low pressure difference linear voltage regulator based on ripple pre-amplification
CN107463201B (en) * 2017-08-02 2018-10-19 中国电子科技集团公司第二十四研究所 A kind of Voltage-current conversion circuit and device
CN109375699B (en) * 2018-11-13 2020-04-21 中国电子科技集团公司第二十四研究所 Voltage-current conversion circuit with high linearity

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