CN112904247A - Alternating magnetic field sensor and electronic device - Google Patents
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- CN112904247A CN112904247A CN202110060600.7A CN202110060600A CN112904247A CN 112904247 A CN112904247 A CN 112904247A CN 202110060600 A CN202110060600 A CN 202110060600A CN 112904247 A CN112904247 A CN 112904247A
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- 230000035945 sensitivity Effects 0.000 abstract description 20
- 230000006698 induction Effects 0.000 abstract description 2
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- 238000005452 bending Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/10—Plotting field distribution ; Measuring field distribution
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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Abstract
The application discloses an alternating magnetic field sensor and electronic equipment, wherein the alternating magnetic field sensor comprises a piezoelectric layer and at least two magneto-deformation pieces; be provided with protruding structure on the magnetic deformation piece, two at least magnetic deformation pieces all pass through protruding structure with the piezoelectric layer is fixed, the magnetic deformation piece is used for the extrusion the piezoelectric layer, and makes the piezoelectric layer produces the signal of telecommunication. This application is through two at least magnetic deformation spare induction alternating magnetic field to through protruding structure on the piezoelectric layer, increased alternating magnetic field sensor's sensitivity.
Description
Technical Field
The application belongs to the technical field of sensors, and particularly relates to an alternating magnetic field sensor and electronic equipment.
Background
In the related art, with the development of sensor technology, in order to avoid components in electronic equipment from being interfered by an alternating magnetic field, a hall sensor, a magnetoelectric sensor or a magnetoresistive sensor is generally arranged in the electronic equipment.
The Hall sensor is a passive sensor, can normally work only by an external power supply, and has high power consumption, poor consistency, low sensitivity and poor temperature characteristic. The sensitivity of the existing magnetoelectric sensor is low. The magnetoresistive sensor has a small range and is easily saturated with a high-intensity magnetic field.
In the process of implementing the present application, the applicant finds that at least the following problems exist in the prior art: the sensor in the prior art has low sensitivity to the alternating magnetic field sensor and small measuring range.
Disclosure of Invention
The application aims to provide an alternating magnetic field sensor, and at least solves one of the problems that the sensor in the prior art is low in sensitivity and small in measuring range.
In order to solve the technical problem, the present application is implemented as follows:
in a first aspect, embodiments of the present application provide an alternating magnetic field sensor, which includes a piezoelectric layer and at least two magnetodeformation members;
be provided with protruding structure on the magnetic deformation piece, two at least magnetic deformation pieces all pass through protruding structure with the piezoelectric layer is fixed, the magnetic deformation piece is used for the extrusion the piezoelectric layer, and makes the piezoelectric layer produces the signal of telecommunication.
In a second aspect, embodiments of the present application provide an electronic device, which includes the alternating magnetic field sensor as described above.
This application is through two at least magnetic deformation spare induction alternating magnetic field to through protruding structure on the piezoelectric layer, increased alternating magnetic field sensor's sensitivity.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is one of schematic structural diagrams of an AC magnetic field sensor according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of an AC magnetic field sensor with a bent support according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a structure in which the thickness of a magnetostrictive member in an AC magnetic field sensor varies in a gradient according to an embodiment of the application;
fig. 4 is a schematic structural diagram of a convex structure provided on an ac magnetic field sensor according to an embodiment of the present application as a spherical convex;
FIG. 5 is a schematic structural diagram of a ball mount according to an embodiment of the present application;
fig. 6 is a second schematic structural diagram of an ac magnetic field sensor according to an embodiment of the present application.
Reference numerals:
1-piezoelectric layer, 2-magnetic deformation piece, 21-convex structure, 3-bending support, 4-spherical support, 41-elastic rod and 42-spherical structure.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The features of the terms first and second in the description and in the claims of the present application may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality" means two or more unless otherwise specified. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
An alternating magnetic field sensor according to an embodiment of the present application is described below with reference to fig. 1-6.
As shown in fig. 1, an alternating magnetic field sensor according to some embodiments of the present application comprises a piezoelectric layer 1 and at least two magnetically deformable members 2.
Be provided with protruding structure 21 on the mangneto deformation piece 2, at least two mangneto deformation pieces 2 all pass through protruding structure 21 with piezoelectric layer 1 is fixed, mangneto deformation piece 2 is used for the extrusion piezoelectric layer 1, and makes piezoelectric layer 1 produces the signal of telecommunication.
The magnetostrictive member 2 can generate mechanical vibration with the same frequency as the alternating magnetic field under the influence of the change of the alternating magnetic field. The piezoelectric layer 1 has a force-electric coupling property and can convert mechanical energy into electric energy. The alternating magnetic field sensor can sense an alternating magnetic field through the magnetic deformation piece 2 and convert the alternating magnetic field into an electric signal through the piezoelectric layer 1, so that information of the alternating magnetic field is output through the electric signal.
In this embodiment, a projection structure 21 is provided on the magnetostrictive member 2, and the magnetostrictive member 2 and the piezoelectric layer 1 are fixed together by the projection structure 21. The raised structure 21 enables the mechanical vibration generated on the magnetostrictive member 2 to act on the piezoelectric layer 1 with greater intensity, thereby improving the intensity of the electric signal output by the piezoelectric layer 1 under the influence of the alternating magnetic field and further improving the sensitivity of the alternating magnetic field sensor.
The at least two magnetostrictive members 2 increase the strength of the mechanical vibrations generated by the magnetostrictive members 2, thereby increasing the mechanical vibrations affecting the piezoelectric layer 1. This means that the intensity of the pressing of the piezoelectric layer 1 by the magnetostrictive member 2 under the influence of the alternating magnetic field is increased, and the piezoelectric layer 1 subjected to the pressing generates an electrical signal with a greater intensity. This can further increase the intensity of the electric signal output from the piezoelectric layer 1, improving the sensitivity of the alternating magnetic field sensor.
The at least two magnetostrictive members 2 comprise two or more magnetostrictive members 2. For example, the at least two magnetic deformation members 2 generate mechanical vibration under the action of the alternating magnetic field, and the mechanical vibration acting on the piezoelectric layer 1 can be increased to increase the electric signal output by the piezoelectric layer 1 under the action of the mechanical vibration, so that the sensitivity of the alternating magnetic field sensor is increased.
For example, the piezoelectric layer 1 and the magnetostrictive member 2 are both of a sheet structure to form a layer structure of the piezoelectric layer 1 and a layer structure of the magnetostrictive member 2, and the at least two layers of magnetostrictive members 2 are fixed on the piezoelectric layer 1 by the bump structures 21. For example, the convex structure 21 is provided on the surface of the magnetostrictive member 2, and the surface of the piezoelectric layer 1 is attached to the convex structure 21. Under the influence of an alternating magnetic field, the magnetostrictive member 2 deforms through mechanical vibration, and the vibration deformation is transmitted to the piezoelectric layer 1 through the convex structures 21, so that the influence of each magnetostrictive member 2 on the piezoelectric layer 1 can be further improved, and the sensitivity of the alternating magnetic field sensor is further improved.
Optionally, at least two raised structures 21 are provided on each of the magnetostrictive members 2, the at least two raised structures 21 enabling a shape modification of the magnetostrictive member 2 to act strongly on the piezoelectric layer 1. For example, at least two raised structures 21 distributed on the magnetostrictive member 2 can more effectively transmit the deformation on the magnetostrictive member 2 to the piezoelectric layer 1. Such a construction improves the final squeezing effect on the piezoelectric layer 1 and likewise the sensitivity of the alternating magnetic field sensor.
In one embodiment, as shown in fig. 1-2, the at least two magnetostrictive members 2 are symmetrically disposed on two sides of the piezoelectric layer 1, and the protruding structure 21 is a tooth-shaped structure. The tooth-shaped structure is provided with a tooth top and a tooth bottom, wherein the tooth top is relatively convex, and the tooth bottom is relatively concave, so that the tooth-shaped structure forms a structure similar to a comb.
In this embodiment, the magnetic deformation members 2 symmetrically disposed on both sides of the piezoelectric layer 1 can simultaneously apply the deformation generated by the mechanical vibration to the piezoelectric layer 1 under the action of the alternating magnetic field to simultaneously press the piezoelectric layer 1. Such a structure can increase the pressing strength of the magnetostrictive member 2 on the piezoelectric layer 1, so that the piezoelectric layer 1 can react more strongly to the deformation caused by mechanical vibration, and the alternating magnetic field sensor has higher sensitivity.
The convex structures 21 of the tooth-shaped structure form meshed structures on two sides of the piezoelectric layer 1, and when the magnetic deformation piece 2 is influenced by the alternating magnetic field to generate mechanical vibration, the deformation caused by the mechanical vibration can form multi-section extrusion action through the meshed structures so as to form larger deformation and act on the piezoelectric layer 1. The convex structures 21 which form the meshing structures on the two sides of the piezoelectric layer 1 can enable the extrusion force of the deformation of the magnetic deformation piece 2 on the piezoelectric layer 1 to be larger, and the alternating magnetic field sensor is improved to have higher sensitivity.
Optionally, in two of the magnetic deformation pieces 2 which are located on two sides of the piezoelectric layer 1 and are symmetrical to each other, the tooth-shaped structure on one magnetic deformation piece 2 is staggered with the tooth-shaped structure on the other magnetic deformation piece 2.
The two tooth-shaped structures which are positioned on the two symmetrical sides of the piezoelectric layer 1 are staggered with each other, so that the tooth tops of the tooth-shaped structures are opposite to the tooth bottoms of the tooth-shaped structures on the symmetrical sides. When the deformation of the magnetostrictive element 2 is transmitted to the piezoelectric layer 1 via the tooth crests, the force-bearing part of the piezoelectric layer 1 is at the tooth base position on the symmetrical side, and there is no structural compression or stop. This enables the piezoelectric layer 1 to be formed into a larger deformation to output a stronger electric signal. And under the action of the tooth tops on the two symmetrical sides, the piezoelectric layer 1 can be further subjected to larger deformation as a whole, so that the electric signal output by the piezoelectric layer 1 is further increased. The mutually staggered tooth-like structures further increase the sensitivity of the alternating magnetic field sensor.
In one embodiment, as shown in fig. 3, at least two said magnetically deformable members 2 are provided on each side of said piezoelectric layer 1, each said magnetically deformable member 2 in each side having a different size in the thickness direction of said piezoelectric layer 1.
The dimensions of each of the magnetically deformable members 2 in each side of the piezoelectric layer 1 are different in the thickness direction of the piezoelectric layer 1, so that the same side of the piezoelectric layer 1 has magnetically deformable members 2 of different thickness. Different thicknesses of the magnetostrictive member 2 have different degrees of response to alternating magnetic fields of different frequencies, and will deform to different degrees. The different thicknesses of the magnetostrictive member 2 can produce larger deformation in the corresponding frequency range of the alternating magnetic field to form larger intensity extrusion on the piezoelectric layer 1.
The magnetostrictive deformation pieces 2 with different thicknesses can make larger response to alternating magnetic fields with different frequencies, and the detection range of the alternating magnetic field sensor can be enlarged by the at least two magnetostrictive deformation pieces 2, so that the sensing range of the alternating magnetic field sensor is enlarged.
The different size of each of the magnetically deformable members 2 in each side in the thickness direction of the piezoelectric layer 1 means that each magnetically deformable member 2 is different in thickness size from the adjacent magnetically deformable member 2. For example, the second member 2 is of smaller thickness relative to the first member 2, while the third member 2 is of smaller thickness relative to the second member 2.
In one embodiment, as shown in fig. 4, the at least two magnetostrictive members 2 are symmetrically disposed on two sides of the piezoelectric layer 1, and the protrusion structure 21 includes a plurality of spherical protrusions.
In this embodiment, the magnetostrictive elements 2 symmetrically disposed on both sides of the piezoelectric layer 1 can simultaneously apply the deformation caused by the mechanical vibration to the piezoelectric layer 1 under the action of the alternating magnetic field. Such a structure can increase the effect of the magnetostrictive member 2 on the piezoelectric layer 1, so that the piezoelectric layer 1 can react more strongly to the deformation caused by mechanical vibration, and the alternating magnetic field sensor has higher sensitivity.
The spherical bulge forms the structure of clamping the piezoelectric layer 1 in the middle on two sides of the piezoelectric layer 1, and when the magnetic deformation piece 2 is influenced by an alternating magnetic field to generate mechanical vibration, the deformation caused by the mechanical vibration can form the extrusion effect of larger pressure in a unit area through the spherical structure so as to form larger deformation and act on the piezoelectric layer 1. The structure can enable the magneto-deformation piece 2 to deform acting force on the piezoelectric layer 1, and the alternating magnetic field sensor is improved to have higher sensitivity.
Alternatively, a plurality of spherical protrusions are arrayed on the surface of the magnetostrictive member 2.
In this embodiment, when the arrayed spherical protrusions act on the piezoelectric layer 1, more uniform compression can be provided, so that each spherical protrusion has a larger compression deformation effect. The piezoelectric layer 1 can more accurately reflect the influence of the alternating magnetic field on the magnetic deformation piece 2 under the extrusion action of the deformation of the plurality of spherical bulges, so that the alternating magnetic field is more accurately sensed, and the sensitivity of the alternating magnetic field sensor is improved.
In one embodiment, in two of the magnetostrictive members 2 that are located on both sides of the piezoelectric layer 1 and are symmetrical to each other, the spherical protrusions on one magnetostrictive member 2 are staggered from the spherical protrusions on the other magnetostrictive member 2.
In this embodiment, the plurality of knobs on both sides of the piezoelectric layer 1 are staggered with respect to each other to form a staggered arrangement. Wherein each spherical bulge is opposite to the gap position between the spherical bulges on the symmetrical sides. When the deformation of the magnetostrictive member 2 is transmitted to the piezoelectric layer 1 through the spherical protrusions, the portion of the piezoelectric layer 1 subjected to the force is the gap position between the spherical protrusions on the symmetrical side, which is the position where no spherical protrusion is provided. Thus, there is no structure to form a pinch or stop at the location of the symmetrical sides of each knob. This enables the piezoelectric layer 1 to be formed into a larger deformation to output a stronger electric signal. And under the action of the symmetrical spherical bulges on the two sides, the piezoelectric layer 1 can be further subjected to larger deformation integrally, so that the electric signal output by the piezoelectric layer 1 is further increased. The mutually staggered spherical protrusions further increase the sensitivity of the alternating magnetic field sensor.
In one embodiment, as shown in fig. 6, the at least two magnetically deformable members 2 are uniformly distributed around the side wall of the piezoelectric layer 1, and the at least two magnetically deformable members 2 are fixed to the side wall of the piezoelectric layer 1 through the convex structures 21. The structure of the piezoelectric layer 1 is a circular plate, and the size of each of the magnetostrictive members 2 is different in a direction perpendicular to the side wall of the piezoelectric layer 1.
In this embodiment, the magnetostrictive members 2 are arranged around the piezoelectric layer 1, and the dimension of each magnetostrictive member 2 in the direction perpendicular to the side wall is different.
For example, the dimension of the magnetostrictive member 2 in the direction perpendicular to the side wall is the length dimension of the magnetostrictive member 2, and the direction perpendicular to the side wall is the length direction of the magnetostrictive member 2. The difference in size may be that the lengths of adjacent magnetostrictive members 2 are shorter or longer one by one.
One end of each of the magnetostrictive members 2 in the length direction is fixed to the piezoelectric layer 1 by a projection structure 21. The magnetostrictive members 2 with different lengths can respond to the alternating magnetic field with different frequencies more effectively, and the measuring range of the alternating magnetic field sensor is increased.
The magnetostrictive member 2 is fixed to the piezoelectric layer 1 by the raised structure 21, which increases the sensitivity of the alternating magnetic field sensor. For example, each of the projection structures 21 in the above embodiments can produce an effect of improving the sensitivity.
Alternatively, the raised structure 21 is a structure of an end of the magnetically deformable member 2, the end of the magnetically deformable member 2 being connected to the piezoelectric layer 1.
The magnetodeformable members 2 are distributed on the side walls of the structure of the circular plate. At least two magnetic deformation pieces 2 are uniformly distributed around the circular plate structure, and the piezoelectric layer 1 is effectively extruded under the influence of the alternating magnetic field, so that the piezoelectric layer 1 is deformed, and an electric signal is output to achieve the purpose of detection.
Optionally, the protruding structure 21 is an arc-shaped groove, the arc-shaped groove is disposed at the end of the magnetostrictive deformation part 2, two sides of the arc-shaped groove are protruding, and the middle part is recessed towards one side of the magnetostrictive deformation part 2. The arc-shaped groove can be better attached to the side wall of the circular plate structure, so that the deformation of the magnetodeformation piece 2 is effectively transmitted to the piezoelectric layer 1.
For example, the magnetostrictive member 2 is a rod-like structure, the end area of which is small, and the piezoelectric layer 1 can be affected by deformation through the arc-shaped groove.
In one embodiment, as shown in fig. 1-4, the alternating magnetic field sensor further comprises at least two supports, wherein the supports have elasticity, one end of each support is fixed with the piezoelectric layer 1, and the other end of each support is used for being fixed with an external structure.
In this embodiment, the support enables the alternating magnetic field sensor to be supported on an external structure. The support has elasticity and can form the buffering to alternating magnetic field sensor, can avoid alternating magnetic field sensor to damage when receiving the impact force.
Alternatively, as shown in fig. 1-5, the seat comprises a bent seat 3 or a spherical seat 4.
The bending support 3 can effectively buffer the impact force in the vertical direction, and the buffer effect of the alternating magnetic field sensor on the vertical impact is improved. The spherical support 4 can form buffering in different directions, and impact in different directions caused by falling and other problems is effectively avoided. The protection effect on the alternating magnetic field sensor is improved.
For example, as shown in fig. 5, the spherical bearing 4 comprises a spherical structure 42 and an elastic rod 41 connected together, and the spherical bearing 4 is made of elastic material. The spherical structure 42 is connected with the piezoelectric layer 1 through the elastic rod 41, and the spherical structure 42 is connected and fixed with an external structure.
In an embodiment of the application, an electronic device is provided, comprising an alternating magnetic field sensor as described in any of the above embodiments.
In this embodiment, the alternating magnetic field sensor in the electronic device can effectively detect the alternating magnetic field. In the case where an alternating magnetic field is generated, the alternating magnetic field is detected by an alternating magnetic field sensor, so that the influence of the alternating magnetic field on the elements in the electronic apparatus can be eliminated. For example, the influence on the electronic compass is canceled by the alternating magnetic field detected by the alternating magnetic field sensor.
Alternatively, the alternating magnetic field sensor is provided on a main board of the electronic device, and the alternating magnetic field sensor is located near the charging IC and the radio frequency PA to effectively cancel the influence.
For example, when the electronic device is plugged into a charger or the radio frequency PA is powered off instantaneously, a large current flows in a main board area around the alternating magnetic field device, the changed large current generates a changed alternating magnetic field, and the changed alternating magnetic field is sensed by the alternating magnetic field sensor. Converted into an electrical signal by an alternating magnetic field sensor. The electric signal is amplified by electric charge and sent to a signal processing part for processing of magnitude, phase and the like. The main control unit of the electronic equipment does not process data sensed by components such as an electronic compass in a time period when the alternating magnetic field sensor senses the alternating magnetic field, so that errors of the components are avoided.
In the description herein, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.
Claims (11)
1. An alternating magnetic field sensor comprising a piezoelectric layer and at least two magnetodeformable members;
be provided with protruding structure on the magnetic deformation piece, two at least magnetic deformation pieces all pass through protruding structure with the piezoelectric layer is fixed, the magnetic deformation piece is used for the extrusion the piezoelectric layer, and makes the piezoelectric layer produces the signal of telecommunication.
2. The alternating magnetic field sensor according to claim 1, wherein the at least two magnetically deformable members are symmetrically disposed on both sides of the piezoelectric layer, and the protruding structure is a tooth-like structure.
3. The alternating magnetic field sensor of claim 2 wherein at least two of the magnetostrictive members are disposed on each side of the piezoelectric layer;
the dimensions of each of the magnetically deformable members in each side in a thickness direction of the piezoelectric layer are different.
4. The alternating magnetic field sensor according to claim 2, wherein, of the two magnetically deformable members located on both sides of the piezoelectric layer and symmetrical to each other, the tooth-like structure on one magnetically deformable member is staggered from the tooth-like structure on the other magnetically deformable member.
5. The alternating magnetic field sensor of claim 1, wherein the at least two magnetically deformable members are symmetrically disposed on both sides of the piezoelectric layer, and the protrusion structure comprises a plurality of spherical protrusions.
6. The alternating magnetic field sensor of claim 5, wherein a plurality of spherical-shaped protrusion arrays are arranged on the surface of the magnetostrictive member.
7. The alternating magnetic field sensor according to claim 6, wherein the plurality of spherical protrusions on one of the two magnetically deformable members located on both sides of the piezoelectric layer and symmetrical to each other are staggered from the spherical protrusions on the other magnetically deformable member.
8. The alternating magnetic field sensor of claim 1, wherein the at least two magnetically deformable members are evenly distributed around the side wall of the piezoelectric layer, both of the at least two magnetically deformable members being fixed with the side wall of the piezoelectric layer by the raised structure;
the piezoelectric layer is structured as a circular plate, and each of the magnetostrictive members is different in size in a direction perpendicular to the side wall of the piezoelectric layer.
9. The alternating magnetic field sensor according to claim 1, further comprising at least two supports, the supports having elasticity, one end of the supports being fixed to the piezoelectric layer, the other end of the supports being used for fixing to an external structure.
10. The alternating magnetic field sensor of claim 9 wherein the pedestal comprises a bent pedestal or a spherical pedestal.
11. An electronic device, characterized in that it comprises an alternating magnetic field sensor according to any one of claims 1 to 10.
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| CN114859139A (en) * | 2022-07-06 | 2022-08-05 | 成都航空职业技术学院 | Outdoor transmission line electromagnetic field measuring device |
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| CN207123724U (en) * | 2017-08-21 | 2018-03-20 | 维沃移动通信有限公司 | A kind of mobile terminal |
| CN210689875U (en) * | 2019-12-18 | 2020-06-05 | 京东方科技集团股份有限公司 | Flexible capacitive sensor and pressure measuring device |
| CN111580028A (en) * | 2020-05-21 | 2020-08-25 | 中山科立特光电科技有限公司 | Semiconductor magnetic field detector based on magnetostrictive effect |
| CN111519205A (en) * | 2020-06-12 | 2020-08-11 | 中山科立特光电科技有限公司 | Vibration-enhanced desorption cathode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114859139A (en) * | 2022-07-06 | 2022-08-05 | 成都航空职业技术学院 | Outdoor transmission line electromagnetic field measuring device |
| CN114859139B (en) * | 2022-07-06 | 2022-09-09 | 成都航空职业技术学院 | Outdoor transmission line electromagnetic field measuring device |
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