CN112903736A - Method for testing nanoprobe on sample slope - Google Patents
Method for testing nanoprobe on sample slope Download PDFInfo
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- CN112903736A CN112903736A CN202110122128.5A CN202110122128A CN112903736A CN 112903736 A CN112903736 A CN 112903736A CN 202110122128 A CN202110122128 A CN 202110122128A CN 112903736 A CN112903736 A CN 112903736A
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- 238000012360 testing method Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000523 sample Substances 0.000 claims abstract description 146
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 62
- 238000010894 electron beam technology Methods 0.000 claims abstract description 17
- 238000005520 cutting process Methods 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 28
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
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Abstract
The invention provides a method for testing a nanoprobe on a sample slope surface, which comprises the following steps: fixing a sample on a sample stage of an FIB, and moving the sample stage to a confocal height of an electron beam and an ion beam; rotating the sample stage to enable the sample stage and the ion beam to form a preset angle; bombarding the surface of the sample by using the ion beam, cutting a target area of the sample and forming a slope; and utilizing a nano probe to perform electrical property test on the slope surface. The method is characterized in that a slope is processed on a sample by utilizing a focused ion beam, the nano probe test of the inner lower layer structure of the sample is realized by directly pointing at the slope, accurate electrical data is obtained, and the method has great significance for the failure analysis work of special samples.
Description
Technical Field
The invention belongs to the technical field of semiconductor defect detection, and particularly relates to a method for testing a nanoprobe on a sample slope.
Background
A Nano probe station (Nano probe) is a Nano probe system integrated with a Scanning Electron Microscope (SEM), and can perform Nano failure analysis on devices in an integrated circuit chip, such as electrical characteristic parameter measurement, Nano open circuit and short circuit failure positioning, high and low temperature characteristic measurement, and the like. When testing a sample with a nanoprobe, it is usually necessary to lay the sample flat and grind the sample to a metal layer with a certain height difference. However, for some special samples, the needle test cannot be completed on a plane, so that accurate failure analysis cannot be performed.
For a special sample of bit line short circuit, addresses of two bit lines are known, but since the bit lines have a certain length, a specific short-circuit position cannot be located according to the existing locating means, for example, the bit lines extend along the longitudinal direction by a length of 500um, although the two short-circuit bit lines can be located by the existing locating means, a specific short-circuit point cannot be found from a target range of 500 um.
Because of this special sample, because the distance of two bit lines is very close, can only carry out the electrical property test through the nanometer probe, but if adopt nanometer probe platform to carry out the probe test under the plane, then need grind the metal level, can produce following problem: 1) the redistribution layer has uneven patterns, so that the metal layer cannot be uniformly ground; 2) the metal connecting lines are very dense, and Cu diffusion is easily caused by excessive grinding, so that large-area short circuit is caused; 3) the target range is too large to accurately locate the shorting dots by grinding.
Disclosure of Invention
The invention aims to provide a method for testing a nanoprobe on a slope surface of a sample, which realizes the nanoprobe test of an inner lower layer structure of the sample, obtains accurate electrical data and has great significance for the failure analysis work of a special sample.
In order to achieve the above object, the present invention provides a method for performing a nanoprobe test on a slope surface of a sample, comprising the steps of:
fixing a sample on a sample stage of an FIB, and moving the sample stage to a confocal height of the electron beam and the ion beam;
rotating the sample stage to enable the sample stage and the ion beam to form a preset angle;
bombarding the surface of the sample by using the ion beam, cutting a target area of the sample and forming a slope;
and utilizing a nano probe to perform electrical property test on the slope surface.
Optionally, the angle between the electron beam and the ion beam is 52 °.
Optionally, the preset angle is between 0 ° and 90 °.
Optionally, the sample stage is parallel to a horizontal plane, and the preset angle is 38 °.
Optionally, the slope angle of the slope surface is 38 °.
Optionally, when the ion beam is used to bombard the surface of the sample, the scanning direction of the ion beam is from bottom to top.
Optionally, a cut cross-section mode is selected when bombarding the sample surface with the ion beam.
Optionally, the sample includes a first metal layer and a second metal layer, the second metal layer is located below the first metal layer, and when the ion beam is used to bombard the surface of the sample, cut the target region of the sample and form a slope, the ion beam cuts from the first metal layer to the second metal layer.
Optionally, the second metal layer includes two adjacent bit lines, and the sample surface is bombarded by the ion beam to cut the two bit lines and form the slope.
Optionally, cutting is performed along the extending direction of the bit line by adopting a bisection method, and testing is performed through the nanoprobe until the short-circuit point of the two bit lines is found.
The method for testing the nanoprobe on the slope surface of the sample comprises the following steps: fixing a sample on a sample stage of an FIB, and moving the sample stage to a confocal height of an electron beam and an ion beam; rotating the sample stage to enable the sample stage and the ion beam to form a preset angle; bombarding the surface of the sample by using the ion beam, cutting a target area of the sample and forming a slope; and utilizing a nano probe to perform electrical property test on the slope surface. The method is characterized in that a slope is processed on a sample by utilizing a focused ion beam, the nano probe test of the inner lower layer structure of the sample is realized by directly pointing at the slope, accurate electrical data is obtained, and the method has great significance for the failure analysis work of special samples.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention. Wherein:
FIG. 1 is a schematic illustration of a FIB under conventional conditions according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating steps of a method for performing a nanoprobe test on a slope of a sample according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a rotation of a sample stage according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a nanoprobe provided in an embodiment of the present invention;
wherein the reference numerals are:
10-a sample stage; 20-an ion beam; 30-an electron beam;
100-sample; 200-a sample stage; 300-ion beam; 400-electron beam; 500-slope surface; 600-nanoprobes; theta-a preset angle.
Detailed Description
As shown in fig. 1, fig. 1 is a schematic diagram of FIB sample preparation under conventional conditions, a sample stage 10 is rotated counterclockwise by 52 ° so that the sample stage 10 is perpendicular to an ion beam 20 and the sample stage 10 forms an angle of 38 ° with the electron beam 30, and the sample stage 10 is moved to a confocal height between the electron beam 30 and the ion beam 20. However, conventional sample preparation by FIB is difficult to achieve for nanoprobe testing of underlying structures within a sample.
Therefore, the invention provides a method for testing a nanoprobe on a slope surface of a sample, which forms the slope surface at a target position of the sample by forming an included angle between a sample platform and an ion beam, so that the nanoprobe can be tested directly on the slope surface, the electrical test of a lower layer structure in the sample is realized, and accurate electrical data is obtained.
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently. It should be further understood that the terms "first," "second," "third," and the like in the description are used for distinguishing between various components, elements, steps, and the like, and are not intended to imply a logical or sequential relationship between various components, elements, steps, or the like, unless otherwise indicated or indicated.
Referring to fig. 2 in combination with fig. 3 to 4, the present embodiment provides a method for performing a nanoprobe test on a slope of a sample, including the following steps:
s1, fixing the sample 100 on the sample stage 200 of the FIB, and moving the sample stage 200 to the height of the confocal point of the electron beam 400 and the ion beam 300;
s2, rotating the sample stage 200 to make the sample stage 200 and the ion beam 300 form a predetermined angle θ;
s3, bombarding the surface of the sample 100 with the ion beam 300, cutting the target area of the sample 100 and forming a slope 500;
and S4, performing an electrical test on the slope surface 500 by using the nanoprobe 600.
In this embodiment, the steps S1-S3 are to prepare the sample to be tested 100, and the step S4 is to test the prepared sample to be tested through the nanoprobe 600.
Specifically, step S1 is executed to fix the sample 100 on the sample stage 200 of the FIB, and move the sample stage 200 to the confocal height between the electron beam 400 and the ion beam 300. In this embodiment, the sample 100 is a chip to be tested, and the defect of the chip is not on the surface but on the underlying structure of the chip, so that it is difficult to obtain accurate test information if the chip is directly placed on a plane.
In this embodiment, the included angle between the electron beam 400 and the ion beam 300 is 52 °, the electron beam 400 is perpendicular to the horizontal plane, and the whole process of the real-time monitoring processing of the electron beam 400 can be utilized while the ion beam 300 is processed, so that the processing quality can be better controlled, and the cross section and surface information of the sample 100 can be observed by utilizing the characteristic of high resolution of the imaging of the electron beam 400.
Next, in step S2, the sample stage 200 is rotated to make the sample stage 200 and the ion beam 300 form a predetermined angle θ. The slope 500 is formed by making the sample stage 200 and the ion beam 300 have a predetermined angle θ, which is between 0 ° and 90 ° as shown in fig. 3. It is understood that no matter how the sample stage 200 is rotated, the sample 100 and the ion beam 300 must be angled to smoothly process a slope 500. For the convenience of cutting, the sample stage 200 may be rotated clockwise by an angle less than 90 ° because the ion beam 300 and the sample 100 will be parallel when the sample stage 200 is rotated to 90 °.
In this embodiment, the sample stage 200 is parallel to the horizontal plane, and the preset angle is 38 °.
Next, step S3 is performed, in which the ion beam 300 is used to bombard the surface of the sample 100, so as to cut the target area of the sample 100 and form a slope 500. The ion beam 300 is used to generate a large amount of ions, and the slope 500 is formed by sputter etching or assisted gas sputter etching, and the depth and width of the slope 500 can be determined according to the size of the defect. Specifically, the step slope 500 may be etched by a larger ion beam current, and in order to save the processing time, the etching may be enhanced by using an auxiliary gas during the etching process, so as to greatly shorten the processing time. After a large amount of material is etched away, the slope 500 is finely processed with a moderate ion beam current to clean the surface. And then polishing the slope surface 500 by using a smaller ion beam.
Different sampling methods under the FIB correspond to different bombardment forms and directions of the ion beam 300, and have different effects. In preparing the sample slope 500, the ion beam 300 may be selected to have a cut cross-section (clean cross section) in the action mode and a scan direction from bottom to top (bottom to top) in consideration of the relative angles of the sample 100 and the ion beam 300. According to the structure of the sample 100, the ion beam 300 has different effective areas, so that it is necessary to ensure that the complete structure near the lower test needle position can be seen, and a certain needle inserting space is left.
In this embodiment, since the sample stage 200 and the ion beam 300 form an included angle of 38 °, the slope angle of the slope is 38 °.
In this embodiment, the sample 100 includes a first metal layer and a second metal layer, the second metal layer is located below the first metal layer, and when the ion beam 300 is used to bombard the surface of the sample 100, and the target region of the sample 100 is cut to form a slope 500, the ion beam 300 cuts from the first metal layer to the second metal layer. It is understood that when a defect occurs in the second metal layer, a slope 500 is cut by the ion beam 300 to expose the second metal layer, so that the nanoprobe 600 can be directly inserted into the probe for testing.
Further, the second metal layer includes two adjacent bit lines, and is characterized in that the ion beam 300 is used to bombard the surface of the sample 100, and the ion beam 300 is used to cut the two bit lines and form the slope 500. In this embodiment, the second metal layer includes a plurality of bit lines, two short-circuited bit lines are confirmed by conventional testing means, and the positions of the two bit lines are known. A cut can then be made by the ion beam 300 to expose a cross-section of both of the bitlines for testing the location of the shorting contacts.
Finally, step S4 is executed, and the slope 500 is electrically tested by using the nanoprobe 600. Referring to fig. 4, since the slope 500 has exposed the underlying structure of the sample 100 and reserves the probe insertion space of the nanoprobe 600, the prepared sample 100 can be transferred to a nanoprobe stage, and the sample can be directly tested by the nanoprobe 600 after being fixed.
In this embodiment, a bisection method is adopted to cut along the extending direction of the bit lines, and the nano probe 600 is used for testing until the short contacts of the two bit lines are found. In this embodiment, since the bit line has a certain extension length, the target area can be sequentially reduced by bisection on the premise that the specific short-circuit point position cannot be determined. For example, if the target area of the bit line is 500um, after the first cut and ramp 500 test, the target area can be reduced to 250um, and then the steps S4-S5 are repeated until two short contacts of the bit line are found.
In this embodiment, according to the probe angle of the nano probe station, at most four needles can be simultaneously used for the nano probe 600 test on the sample slope 500.
In summary, the present invention provides a method for performing a nanoprobe test on a slope surface of a sample, comprising the following steps: fixing a sample on a sample stage of an FIB, and moving the sample stage to a confocal height of an electron beam and an ion beam; rotating the sample stage to enable the sample stage and the ion beam to form a preset angle; bombarding the surface of the sample by using the ion beam, cutting a target area of the sample and forming a slope; and utilizing a nano probe to perform electrical property test on the slope surface. The method is characterized in that a slope is processed on a sample by utilizing a focused ion beam, the nano probe test of the inner lower layer structure of the sample is realized by directly pointing at the slope, accurate electrical data is obtained, and the method has great significance for the failure analysis work of special samples.
It should be understood, however, that the intention is not to limit the invention to the particular embodiments described. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the protection scope of the technical solution of the present invention, unless the content of the technical solution of the present invention is departed from.
Claims (10)
1. A method for carrying out a nanoprobe test on a sample slope surface is characterized by comprising the following steps:
fixing a sample on a sample stage of an FIB, and moving the sample stage to a confocal height of an electron beam and an ion beam;
rotating the sample stage to enable the sample stage and the ion beam to form a preset angle;
bombarding the surface of the sample by using the ion beam, cutting a target area of the sample and forming a slope;
and utilizing a nano probe to perform electrical property test on the slope surface.
2. The method for nanoprobe testing on sample slope according to claim 1 characterized in that the electron beam and the ion beam are at an angle of 52 °.
3. The method for nanoprobe testing on sample slope according to claim 2, characterized in that the predetermined angle is between 0 ° and 90 °.
4. The method of claim 3, wherein the sample stage is parallel to a horizontal plane and the predetermined angle is 38 °.
5. The method of claim 4, wherein the slope has a slope angle of 38 °.
6. The method of claim 1, wherein the ion beam is scanned from bottom to top while bombarding the surface of the sample.
7. The method of claim 1, wherein a cutting cross-section mode is selected when bombarding the sample surface with the ion beam.
8. The method of claim 1, wherein the sample comprises a first metal layer and a second metal layer, and the second metal layer is located below the first metal layer, wherein the ion beam is used to bombard the surface of the sample, cut the target region of the sample and form a slope, and the ion beam cuts from the first metal layer to the second metal layer.
9. The method of claim 8, wherein the second metal layer comprises two adjacent bitlines, and wherein the ion beam bombards the surface of the sample to cut the two bitlines and form the slope.
10. The method of claim 9, wherein the cutting along the extension direction of the bit line is performed by a bisection method, and the testing is performed by the nanoprobe until a short point of two of the bit lines is found.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110122128.5A CN112903736A (en) | 2021-01-26 | 2021-01-26 | Method for testing nanoprobe on sample slope |
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| CN202110122128.5A CN112903736A (en) | 2021-01-26 | 2021-01-26 | Method for testing nanoprobe on sample slope |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116013800A (en) * | 2022-12-30 | 2023-04-25 | 胜科纳米(苏州)股份有限公司 | Defect positioning method and device, electronic equipment and storage medium |
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| CN106289909A (en) * | 2016-08-19 | 2017-01-04 | 上海华力微电子有限公司 | The method preparing example of transmission electron microscope |
| CN107993953A (en) * | 2017-11-23 | 2018-05-04 | 长江存储科技有限责任公司 | A kind of method for being accurately positioned cavity position in electro-migration testing |
| US20190128961A1 (en) * | 2016-04-12 | 2019-05-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | System and method for testing an integrated circuit |
| CN111679100A (en) * | 2020-07-16 | 2020-09-18 | 上海华力微电子有限公司 | Nano probe testing method |
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- 2021-01-26 CN CN202110122128.5A patent/CN112903736A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011215112A (en) * | 2010-04-02 | 2011-10-27 | National Institute Of Advanced Industrial Science & Technology | Multi-probe afm nanoprober and measurement method using the same |
| US20190128961A1 (en) * | 2016-04-12 | 2019-05-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | System and method for testing an integrated circuit |
| CN106289909A (en) * | 2016-08-19 | 2017-01-04 | 上海华力微电子有限公司 | The method preparing example of transmission electron microscope |
| CN107993953A (en) * | 2017-11-23 | 2018-05-04 | 长江存储科技有限责任公司 | A kind of method for being accurately positioned cavity position in electro-migration testing |
| CN111679100A (en) * | 2020-07-16 | 2020-09-18 | 上海华力微电子有限公司 | Nano probe testing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116013800A (en) * | 2022-12-30 | 2023-04-25 | 胜科纳米(苏州)股份有限公司 | Defect positioning method and device, electronic equipment and storage medium |
| CN116013800B (en) * | 2022-12-30 | 2024-02-27 | 胜科纳米(苏州)股份有限公司 | Defect positioning method and device, electronic equipment and storage medium |
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Application publication date: 20210604 |