CN112902030A - Chip structure - Google Patents
Chip structure Download PDFInfo
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- CN112902030A CN112902030A CN202110116517.7A CN202110116517A CN112902030A CN 112902030 A CN112902030 A CN 112902030A CN 202110116517 A CN202110116517 A CN 202110116517A CN 112902030 A CN112902030 A CN 112902030A
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- hole
- induction
- holes
- chip
- circuit
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D5/00—Protection or supervision of installations
- F17D5/02—Preventing, monitoring, or locating loss
- F17D5/06—Preventing, monitoring, or locating loss using electric or acoustic means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
- G01M3/16—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means
- G01M3/18—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators
- G01M3/182—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using electric detection means for pipes, cables or tubes; for pipe joints or seals; for valves; for welds; for containers, e.g. radiators for tubes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Acoustics & Sound (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention relates to a chip structure, which comprises a chip substrate, wherein the chip substrate is spherical, and three groups of induction holes are formed in the chip substrate; the axes of the three groups of induction holes are respectively parallel to the X axis, the Y axis and the Z axis of the chip substrate; water flow induction holes are arranged in three directions, the current, the capacitance or the resistance of the induction holes can be changed by the flow velocity of water, so that the water flow velocity in the three directions on the peripheral side of the chip substrate can be sensed, and the three groups of induction holes are mutually staggered without crossing; the induction holes are conductive holes, the surface of the chip base body is provided with a circuit layer, the circuit layer comprises a plurality of circuit interfaces, and the circuit interfaces are respectively communicated with the conductive holes through the circuit layer; cutting off one of the two sides of the chip substrate, wherein the cutting part is provided with a mounting hole; the circuit interface is positioned on the peripheral wall outside the mounting hole; through the chip structure of spheroid, the position that combines the chip base member place can be judged and is reachd the rivers condition of locating the position to can detect the hourglass water speed and the direction of running and falsifying the hourglass point fast.
Description
Technical Field
The invention relates to the technical field of chips, in particular to a chip structure.
Background
The current pipeline detection technology field is that pipeline breakage condition is observed through image technology, and no mature chip detection technology for pipeline breakage is available.
In order to meet the requirements of people on water for life and production, a series of water delivery projects are built in China, the number of operated kilometers is huge, large overseas water diversion projects which are operated in Shenzhen city only comprise 51.7 kilometers in total length of lines in Dongsheng water supply reconstruction project and 136 kilometers in total length of lines in Dongjiang water source project in Shenzhen city, leakage points of large pipelines are sometimes hidden, and the phenomenon of leakage caused by leakage is found with great difficulty.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the chip structure is provided, the detection sensitivity is high, and leakage points of the pipeline can be found in time.
A chip structure comprises a chip substrate, wherein the chip substrate is spherical, a plurality of induction holes are formed in the chip substrate, and the induction holes are divided into three groups;
the axes of the induction holes in each group are parallel to each other; the axes of the three groups of induction holes are respectively parallel to the X axis, the Y axis and the Z axis of the chip substrate;
the three groups of induction holes are mutually staggered without crossing;
the induction holes are conductive holes, the surface of the chip base body is provided with a circuit layer, the circuit layer comprises a plurality of circuit interfaces, and the circuit interfaces are respectively communicated with the conductive holes through the circuit layer;
cutting off one of the two sides of the chip substrate, wherein the cutting part is provided with a mounting hole;
the circuit interface is located on the peripheral wall outside the mounting hole.
Preferably, the number of the circuit interfaces is more than three;
each induction hole corresponds to one circuit interface;
each circuit interface comprises more than 2 sections of discontinuous incomplete circular rings which are concentrically arranged, each chip interface of the external circuit comprises two brush heads, and at least one brush head is contacted with one incomplete circular ring in the rotation process of the chip substrate.
Preferably, a rotating support shaft is arranged at the mounting hole, and a coded disc for measuring the rotating condition of the chip substrate is arranged at the rotating support shaft.
Preferably, the outer side of the rotating support shaft is supported in an annular track, the annular track is arranged on the inner wall of the hollow sphere, and water inlet holes which are uniformly distributed in a circumferential array are formed in the wall body of the hollow sphere.
Preferably, the number of the annular tracks is four, two annular tracks are perpendicularly intersected, and the other two annular tracks respectively bisect four quadrants formed by the perpendicularly intersected annular tracks.
Preferably, the number of the annular tracks is eight, eight of the annular tracks have two common intersection points, the annular tracks are communicated at the intersection points, and the eight annular tracks are uniformly distributed on the inner wall of the hollow sphere.
Preferably, each of the water inlet holes includes a plurality of micro-holes for filtering impurities, and the pore size of each of the micro-holes is less than 80% of the minimum pore size of the sensing hole.
Preferably, the inner wall of the induction hole is attached to the induction hole by a copper deposition technology by adopting a mixed solution of nano copper with the grain size of 5-50 nm and nano silicon dioxide particles with the size of 5-100 nm;
the surface of the induction hole forms a hydrophobic layer.
The diameter of the induction hole is 0.5-2.5 mm.
The preparation method of the nano silicon dioxide particles is detailed in preparation method of hydrophobic nano silicon dioxide-CN 102502663B.
Preferably, the hollow sphere is formed by mutually buckling two hemispheres.
Preferably, the rotation support shaft is rotatable with respect to the chip base, and the rotation support shaft is slidable with respect to the annular rail.
Preferably, the induction hole is divided into two parts which are insulated from each other along the hole depth direction; the aperture at the insulation boundary is reduced to 15-1000 μm; adopt hydrophobic material to do surface treatment at insulating boundary, under the normal state, the induction hole is divided into two parts of mutual insulation by insulating department, and when turbulent flow or rivers disturbance appear, the water of vortex can pass the induction hole and make the induction hole switch on.
Preferably, the induction hole is divided into two parts which are insulated from each other along the hole depth direction;
isolation holes are formed at the insulation boundary of each induction hole, and the aperture of each isolation hole is respectively reduced to 15 microns, 50 microns, 100 microns, 300 microns, 500 microns or 1000 microns; the method comprises the following steps that a hydrophobic material is adopted to carry out surface treatment on an insulation boundary to form a hydrophobic layer, a lotus effect is formed on the insulation boundary, water drops on two sides of the insulation boundary cannot be combined, and an induction hole is divided into two mutually insulated parts by the insulation boundary in a normal state; when turbulent flow or water flow disturbance occurs, the disturbed water can penetrate through the insulation boundary of the induction hole to enable the induction hole to be conducted.
The aperture of the isolation hole is 60% -80% of the thickness of the hole wall.
The invention has the beneficial effects that: a chip structure comprises a chip substrate, wherein the chip substrate is spherical, a plurality of induction holes are formed in the chip substrate, and the induction holes are divided into three groups; the axes of the induction holes in each group are parallel to each other; the axes of the three groups of induction holes are respectively parallel to the X axis, the Y axis and the Z axis of the chip substrate; the three groups of induction holes are mutually staggered without crossing; the induction holes are conductive holes, the surface of the chip base body is provided with a circuit layer, the circuit layer comprises a plurality of circuit interfaces, and the circuit interfaces are respectively communicated with the conductive holes through the circuit layer; cutting off one of the two sides of the chip substrate, wherein the cutting part is provided with a mounting hole; the circuit interface is positioned on the peripheral wall outside the mounting hole; through the chip architecture of spheroid, set up water response hole on three direction, the velocity of flow of water can change the electric current in response hole, three direction at the chip architecture sets up the response hole, thereby the velocity of water of the three direction of week side of can perception chip base member, combine the position at chip base member place, can judge the rivers condition that reachs the position of locating, judge whether to run the overflow drip point, and the water flow direction and the speed of running the overflow drip point department, thereby can the sensing to the leakage velocity and the direction of running the overflow drip point, the sensitivity of detection is high, can in time discover the leakage point of pipeline.
Drawings
The chip structure of the present invention will be further described with reference to the accompanying drawings.
FIG. 1 is a first structural diagram of a chip structure according to the present invention.
Fig. 2 is a perspective view of the chip structure of the present invention.
Fig. 3 is a schematic structural diagram of a hollow sphere according to a first embodiment of the chip structure of the present invention.
Fig. 4 is a schematic structural diagram of a hollow sphere according to a second embodiment of the chip structure of the present invention.
FIG. 5 is a schematic diagram of a structure of a sensing hole of the chip structure according to the present invention.
In the figure:
1-chip substrate; 11-a sensing hole; 12-mounting holes; 13-a circuit interface; 2-rotating the supporting shaft; 3-code disc; 4-hollow spheres; 41-circular track; 42-water inlet hole; 421-micro-porous; 5-isolating the pores.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode with reference to the attached drawings 1-5.
Example one
A chip structure comprises a chip substrate 1, wherein the chip substrate 1 is spherical, a plurality of induction holes 11 are formed in the chip substrate 1, and the induction holes 11 are divided into three groups;
the axes of the respective sensing holes 11 in each group are parallel to each other; the axes of the three groups of induction holes 11 are respectively parallel to the X axis, the Y axis and the Z axis of the chip substrate 1;
the three groups of induction holes 11 are mutually staggered without crossing;
the induction holes 11 are conductive holes, the surface of the chip base body 1 is provided with a circuit layer, the circuit layer comprises a plurality of circuit interfaces 13, and the circuit interfaces 13 are respectively communicated with the conductive holes through the circuit layer;
cutting off one of the two sides of the chip substrate 1, wherein a mounting hole 12 is formed in the cutting-off position;
the circuit interface 13 is located on the peripheral wall outside the mounting hole 12.
The spherical chip substrate 1 is subjected to the minimum influence of water resistance and turbulence in all directions; set up water induction hole 11 on three direction, the velocity of flow of water can change induction hole 11's electric current, electricity parameters such as voltage and resistance, thereby can perceive the water velocity of the three direction of week side of chip base member 1, combine the position at chip base member 1 place, can judge the rivers condition that reachs the position of locating, judge whether to run the overflow drip point, and the rivers direction and the speed of running the overflow drip point department, thereby can sense the hourglass water velocity and the direction of running the overflow drip point, the sensitivity of detection is high, can in time discover the leak point of pipeline.
In this embodiment, the number of the circuit interfaces 13 is three or more;
each induction hole 11 corresponds to one circuit interface 13;
each circuit interface 13 comprises more than 2 sections of discontinuous incomplete circular rings which are concentrically arranged, each chip interface of the external circuit comprises two brush heads, and at least one brush head is contacted with one incomplete circular ring in the rotating process of the chip substrate 1. The discontinuous incomplete rings are staggered and concentric with each other, so that the connection brush head is ensured to be contacted with at least one incomplete ring, and the circuit interface 13 is ensured to be stably connected with the outside.
In this embodiment, a rotation support shaft 2 is provided at the mounting hole 12, and a code wheel 3 for measuring the rotation of the chip substrate 1 is provided at the rotation support shaft 2.
In this embodiment, the outer side of the rotating support shaft 2 is supported in the annular track 41, the annular track 41 is disposed on the inner wall of the hollow sphere 4, and the wall body of the hollow sphere 4 is provided with water inlet holes 42 uniformly distributed in a circumferential array.
In this embodiment, the number of the annular tracks 41 is four, two annular tracks 41 perpendicularly intersect, and the other two annular tracks 41 respectively bisect four quadrants formed by the perpendicularly intersecting annular tracks 41.
In the present embodiment, the rotation support shaft 2 is rotatable with respect to the chip base 1, and the rotation support shaft 2 is slidable with respect to the annular rail 41.
The four annular rails 41 have two common intersection points where the rotation support shaft 2 can be switched from one annular rail 41 to the other annular rail 41.
In this embodiment, each water inlet hole 42 includes a plurality of micro-holes 421 for filtering impurities, and the pore size of each micro-hole 421 is less than 80% of the minimum pore size of the sensing hole 11.
In the embodiment, the inner wall of the induction hole 11 is attached to the induction hole 11 by a copper deposition technology by adopting a mixed solution of nano copper with a grain size of 5-50 nm and nano silicon dioxide particles with a size of 5-100 nm; the surfaces of the sensing holes 11 form a hydrophobic layer. The hydrophobic layer is arranged, so that the friction force between the induction holes 11 and water flow can be effectively reduced, the flow rate of the water flow is increased, and the induction speed is increased.
The diameter of the induction hole 11 is 0.5-2.5 mm.
The preparation method of the nano silicon dioxide particles is detailed in preparation method of hydrophobic nano silicon dioxide-CN 102502663B.
In this embodiment, the hollow sphere 4 is formed by two hemispheres which are fastened to each other.
In the present embodiment, the rotation support shaft 2 is rotatable with respect to the chip base 1, and the rotation support shaft 2 is slidable with respect to the annular rail 41.
Example two
In this embodiment, the number of the circular tracks 41 is eight, the eight circular tracks 41 have two common intersection points, the circular tracks 41 are communicated at the intersection points, and the eight circular tracks 41 are uniformly distributed on the inner wall of the hollow sphere 4.
In this embodiment, each water inlet hole 42 includes a plurality of micro-holes 421 for filtering impurities, and the pore size of each micro-hole 421 is less than 80% of the minimum pore size of the sensing hole 11.
In the embodiment, the inner wall of the induction hole 11 is attached to the induction hole 11 by a copper deposition technology by adopting a mixed solution of nano copper with a grain size of 5-50 nm and nano silicon dioxide particles with a size of 5-100 nm;
the surfaces of the sensing holes 11 form a hydrophobic layer.
The diameter of the induction hole 11 is 0.5-2.5 mm.
The preparation method of the nano silicon dioxide particles is detailed in preparation method of hydrophobic nano silicon dioxide-CN 102502663B.
In this embodiment, the hollow sphere 4 is formed by two hemispheres which are fastened to each other.
In the present embodiment, the rotation support shaft 2 is rotatable with respect to the chip base 1, and the rotation support shaft 2 is slidable with respect to the annular rail 41.
The induction hole 11 is divided into N parts which are insulated from each other along the hole depth direction, wherein N is more than or equal to 3 and is a natural number;
in this embodiment, each sensing hole 11 is divided into 3 parts, two insulation boundaries are provided, and the isolation hole 5 is formed at the edge boundary. The aperture of the isolation hole 5 at the insulation boundary of the first group of induction holes 11 is set to be 15 micrometers and 50 micrometers respectively; the aperture of the first group of induction holes 11 at the insulation boundary is set to be 15 μm and 25 μm respectively; the aperture of the second group of induction holes 11 at the insulation boundary is set to be 35 μm and 50 μm respectively; the aperture of the insulation boundary of the third group of induction holes 11 is set to be 80 microns and 100 microns respectively; the aperture of the insulating boundary of the fourth group of induction holes 11 is set to be 150 micrometers and 200 micrometers respectively; the aperture of the insulation boundary of the fifth group of induction holes 11 is set to be 250 micrometers and 300 micrometers respectively; the aperture of the insulation boundary of the sixth group of induction holes 11 is respectively set to be 450 μm and 500 μm; the aperture of the seventh group of induction holes 11 at the insulation boundary is set to be 550 μm and 650 μm respectively; the aperture of the insulation boundary of the eighth group of induction holes 11 is respectively set to 750 μm and 850 μm; the hole diameters at the insulation boundaries of the ninth set of sensing holes 11 were set to 950 μm and 1000 μm, respectively.
The aperture of the isolation hole 5 is 60-80% of the thickness of the hole wall, the aperture is smaller than the thickness of the hole wall, and the surface of the hole wall is treated by a hydrophobic layer, so that the isolation effect can be effectively achieved.
The aperture of the isolation hole 5 at the insulation boundary may also be set to any one value of 15 μm to 1000 μm as required.
Adopt hydrophobic material to do surface treatment at insulating boundary, under the normal state, induction hole 11 is divided into two parts of mutual insulation by insulating department, and when turbulent flow or rivers disturbance appear, the water of vortex can pass induction hole 11 and make induction hole 11 switch on.
According to the requirement, the induction hole 11 can be divided into two parts which are mutually insulated along the hole depth direction; the aperture of the insulation boundary of each induction hole 11 is respectively reduced to 15 μm, 50 μm, 100 μm, 300 μm, 500 μm or 1000 μm; the surface of the insulating boundary is treated by a hydrophobic material to form a hydrophobic layer, a lotus effect is formed at the insulating boundary, water drops on two sides of the insulating boundary cannot be combined, and the induction hole 11 is divided into two parts which are insulated from each other by the insulating boundary in a normal state; when turbulence or water flow disturbance occurs, disturbed water passes through the insulation boundary of the induction hole 11 to enable the induction hole 11 to be conducted.
The depth of the insulation boundary is 60% -80% of the aperture thickness.
The present invention is not limited to the above embodiments, and the technical solutions of the above embodiments of the present invention may be combined with each other in a crossing manner to form a new technical solution, and all technical solutions formed by using equivalent substitutions fall within the scope of the present invention.
Claims (10)
1. The chip structure comprises a chip substrate (1), and is characterized in that the chip substrate (1) is spherical, a plurality of induction holes (11) are formed in the chip substrate (1), and the induction holes (11) are divided into three groups;
the axes of the induction holes (11) in each group are parallel to each other; the axes of the three groups of induction holes (11) are respectively parallel to the X axis, the Y axis and the Z axis of the chip substrate (1);
the three groups of induction holes (11) are mutually staggered without crossing;
the induction holes (11) are conductive holes, a circuit layer is arranged on the surface of the chip base body (1), the circuit layer comprises a plurality of circuit interfaces (13), and the circuit interfaces (13) are respectively communicated with the conductive holes through the circuit layer;
one chip substrate (1) is cut off from two sides, and a mounting hole (12) is formed in the cut-off position;
the circuit interface (13) is located on the peripheral wall outside the mounting hole (12).
2. Chip structure in accordance with claim 1 characterized in that the number of circuit interfaces (13) is more than three;
each induction hole (11) corresponds to one circuit interface (13);
each circuit interface (13) comprises more than 2 sections of discontinuous incomplete circular rings which are concentrically arranged, each chip interface of an external circuit comprises two brush heads, and at least one brush head is in contact with one incomplete circular ring in the rotating process of the chip base body (1).
3. Chip structure according to claim 2, characterized in that a rotation support shaft (2) is provided at the mounting hole (12), and a code wheel (3) for measuring the rotation of the chip substrate (1) is provided at the rotation support shaft (2).
4. The chip structure according to claim 3, wherein the outer side of the rotating support shaft (2) is supported in an annular track (41), the annular track (41) is disposed on the inner wall of the hollow sphere (4), and the wall of the hollow sphere (4) is provided with water inlet holes (42) uniformly distributed in a circumferential array.
5. Chip structure according to claim 4, characterized in that the number of the ring tracks (41) is four, two ring tracks (41) intersect perpendicularly, and the other two ring tracks (41) bisect the four quadrants formed by the perpendicularly intersecting ring tracks (41), respectively.
6. Chip structure according to claim 4, characterized in that the number of the ring tracks (41) is eight, eight having two common points of intersection where the ring tracks (41) intercommunicate, eight of the ring tracks (41) being evenly distributed over the inner wall of the hollow sphere (4).
7. The chip structure according to any of claims 5 or 6, wherein each of said water inlet holes (42) comprises a plurality of micro-holes (421) for filtering impurities, and the pore size of each of said micro-holes (421) is less than 80% of the minimum pore size of said sensing hole (11).
8. The chip structure according to claim 7, wherein the inner wall of the sensing hole (11) is attached to the sensing hole (11) by a copper deposition technique using a mixed solution of nano-copper with a grain size of 5-50 nm and nano-silica particles with a size of 5-100 nm;
the surfaces of the induction holes (11) form hydrophobic layers;
the diameter of the induction hole (11) is 0.5-2.5 mm.
9. The chip structure according to claim 8, wherein the hollow sphere (4) is formed by two hemispheres that are fastened to each other;
the rotation support shaft (2) is rotatable with respect to the chip base body (1), and the rotation support shaft (2) is slidable with respect to the annular rail (41).
10. The chip structure according to claim 9, wherein the sensing hole (11) is divided into N parts insulated from each other along a hole depth direction, N is 3 or more, and N is a natural number;
forming an isolation hole (5) at the insulation boundary, wherein the aperture of the isolation hole (5) is reduced to any value of 15-1000 μm; the insulating boundary is subjected to surface treatment by adopting a hydrophobic material, the induction hole (11) is divided into two mutually insulated parts by the insulating part under the normal state, and when turbulent flow or water flow disturbance occurs, disturbed water can pass through the induction hole (11) to conduct the induction hole (11); or the like, or, alternatively,
the induction hole (11) is divided into two parts which are insulated from each other along the hole depth direction; the aperture of the insulation boundary of each induction hole (11) is respectively reduced to 15 mu m, 50 mu m, 100 mu m, 300 mu m, 500 mu m or 1000 mu m; the surface of the insulating boundary is treated by a hydrophobic material to form a hydrophobic layer, a lotus effect is formed at the insulating boundary, water drops on two sides of the insulating boundary cannot be combined, and the induction hole (11) is divided into two parts which are insulated from each other by the insulating boundary in a normal state; when turbulence or water flow disturbance occurs, disturbed water can pass through the insulation boundary of the induction hole (11) to enable the induction hole (11) to be conducted;
the aperture of the isolation hole (5) is 60% -80% of the thickness of the hole wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110116517.7A CN112902030B (en) | 2021-01-28 | 2021-01-28 | Chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110116517.7A CN112902030B (en) | 2021-01-28 | 2021-01-28 | Chip structure |
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| CN112902030A true CN112902030A (en) | 2021-06-04 |
| CN112902030B CN112902030B (en) | 2022-12-09 |
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| CN112902030B (en) | 2022-12-09 |
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