CN112897453A - MEMS stress isolation mechanism and design method thereof - Google Patents

MEMS stress isolation mechanism and design method thereof Download PDF

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CN112897453A
CN112897453A CN202110097880.9A CN202110097880A CN112897453A CN 112897453 A CN112897453 A CN 112897453A CN 202110097880 A CN202110097880 A CN 202110097880A CN 112897453 A CN112897453 A CN 112897453A
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mems
isolation mechanism
stress isolation
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CN112897453B (en
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马志鹏
金一鸣
金仲和
郑旭东
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Zhejiang University ZJU
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009Structural features, others than packages, for protecting a device against environmental influences
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0016Protection against shocks or vibrations, e.g. vibration damping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00325Processes for packaging MEMS devices for reducing stress inside of the package structure

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Abstract

本发明公开了一种MEMS应力隔离机构及其设计方法,属于MEMS机械设计领域,主要由环形或正多边形结构以及分布在波腹点和波节点的锚点构成。在MEMS器件加工或工作过程,由于多种材料膨胀系数失配和温度效应,MEMS器件会受到残余应力和热应力影响。基于环形或正多边形结构的驻波特性,将波腹点与基板锚点相连,将波节点与被保护MEMS器件的锚点相连,可以实现MEMS器件基板与内部被保护MEMS器件间的应力隔离。本发明结构简单,应力隔离效果好,可应用于各类MEMS器件的机械设计中。

Figure 202110097880

The invention discloses a MEMS stress isolation mechanism and a design method thereof, belonging to the field of MEMS mechanical design. During the processing or working process of MEMS devices, due to the mismatch of expansion coefficients of various materials and temperature effects, MEMS devices will be affected by residual stress and thermal stress. Based on the standing wave characteristic of the annular or regular polygon structure, the antinode point is connected to the anchor point of the substrate, and the wave node is connected to the anchor point of the protected MEMS device, which can realize the stress isolation between the MEMS device substrate and the internal protected MEMS device. . The invention has simple structure and good stress isolation effect, and can be applied to the mechanical design of various MEMS devices.

Figure 202110097880

Description

MEMS stress isolation mechanism and design method thereof
Technical Field
The invention belongs to the field of MEMS mechanical design, and particularly relates to an MEMS stress isolation mechanism and a design method thereof.
Background
During MEMS device processing or operation, MEMS devices are typically subjected to residual or thermal stress due to coefficient of expansion mismatches or temperature effects of various materials. At present, a common stress isolation mechanism is composed of a rigid outer frame and an external elastic beam, a protected MEMS device is connected with the rigid outer frame, and the rigid outer frame is connected with a substrate anchor point through the elastic beam. Stress on the base plate is absorbed by the elastic beam in the conduction process, and the rigid outer frame ensures that a protected device is not influenced by the stress, and the stress isolation mechanism is mainly designed to have two problems: 1. the elastic beam absorbs almost all the stress, so the rigidity of the elastic beam cannot be too great, thus limiting the mechanical bandwidth of the protected MEMS device; 2. the elastic beams symmetrically distributed outside the rigid outer frame hardly guarantee consistency in the processing process, and asymmetry causes center deviation of the whole outer frame, so that the positioning problem of a protected MEMS device is influenced, and adverse effects are generated on multilayer MEMS devices (such as sandwich type devices). In addition, it has been reported that the rigid outer frame is directly cantilevered without the elastic beam to achieve stress relief and isolation, which introduces cross-coupling effects and increases the process flow.
A ring or regular polygon structure is often used as a sensing element of the MEMS resonant gyroscope, and the degenerate inter-mode energy transfer due to the coriolis force coupling can be used as the angular velocity detection principle. And the free vibration mode of the ring or regular polygon has an N theta standing wave mode, comprises an antinode and a node, and is respectively used as a driving mode and a detection mode of the gyroscope. The invention utilizes the standing wave characteristic of the annular or regular polygon structure to connect the antinode with the substrate anchor point and connect the node with the protected MEMS device anchor point, thereby forming a simple stress isolation mechanism.
Disclosure of Invention
Aiming at the defects of the existing MEMS stress isolation mechanism, the invention provides the MEMS stress isolation mechanism and the design method thereof, and the MEMS stress isolation mechanism mainly comprises an annular or regular polygon structure and anchor points distributed at antinodes and nodes. The invention is based on the standing wave characteristic of the annular or regular polygon structure, connects the antinode with the substrate anchor point, and connects the node with the anchor point of the protected MEMS device, thereby realizing the stress isolation between the MEMS device substrate and the internal protected MEMS device, effectively reducing the stress influence caused by the MEMS processing process and the temperature effect, simultaneously being compatible with the protected MEMS device in the processing technology, and effectively controlling the manufacturing cost.
The technical scheme adopted by the invention is as follows:
one of the purposes of the invention is to provide an MEMS stress isolation mechanism, the MEMS comprises a substrate and an internal protected MEMS device, the stress isolation mechanism is composed of an annular structure or a regular polygon structure which is provided with anchor points, the anchor points are distributed at antinode points and wave nodes, the anchor points distributed at the antinode points are connected with the substrate anchor points, and the anchor points distributed at the wave node points are connected with the internal protected MEMS device anchor points.
Preferably, the number of sides of the regular polygon structure is not less than 8.
Preferably, the MEMS stress isolation mechanism and the internally protected MEMS device have synchronous and compatible processing technology.
As a preferable aspect of the present invention, the free vibration mode of the ring-shaped structure or regular polygon structure includes an N θ standing wave mode, N > 1; an antinode point and a node point which are distributed in central symmetry exist under each standing wave mode.
Preferably, the resonance frequency corresponding to the N θ standing wave mode is three to five times or more of the mechanical bandwidth of the internally protected MEMS device.
Preferably, the substrate anchors are symmetrically distributed on the anti-node points, and the protected MEMS device anchors are symmetrically or asymmetrically distributed on all or part of the anti-node points.
Another objective of the present invention is to provide a method for designing the MEMS stress isolation mechanism, which includes the following steps:
1) selecting a stress isolation mechanism as an annular structure or a regular polygon structure according to the structures and the shapes of the target substrate and the MEMS device protected inside;
2) determining the order of the N theta standing wave mode according to the number m of anchor points needing to be fixed on the target substrate, namely determining the value of N, so that N is m;
3) designing anchor points on the annular structure or the regular polygon structure according to the determined standing wave vibration mode, wherein the anchor points are distributed on anti-node points and node points which are distributed on the annular structure or the regular polygon structure at intervals; for the N theta standing wave vibration mode, two adjacent antinode points and node points are separated by 90 degrees/N;
4) connecting the substrate anchor points with a group of anti-node points on the annular structure or the regular polygon structure, so that the substrate anchor points are symmetrically distributed on the anti-node points; and connecting the internally protected MEMS device anchor points with the wave nodes on the annular structure or the regular polygon structure, so that the protected MEMS device anchor points are distributed on all or part of the wave nodes symmetrically or asymmetrically.
Further, the resonance frequency corresponding to the N theta standing wave mode determined in the step 2) is three to five times more than the self mechanical bandwidth of the internally protected MEMS device.
Generally, compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) according to the invention, by utilizing the standing wave characteristic of the annular or regular polygon structure, under the action of stress, the antinode point of the structure is deformed, and the position of the node is kept unchanged, so that a protected MEMS device connected to the node is not influenced by the stress, the whole structure is simple, and the isolation effect is obvious;
(2) the stress isolation mechanism comprises various structural designs, can be flexibly adapted to various MEMS devices, and can be in a ring shape, a regular octagon shape, a regular hexadecapegon shape and the like structurally, substrate anchor points can be symmetrically distributed on antinode points of an N theta vibration mode, and connection points of protected devices can be flexibly distributed on wave nodes;
(3) the stress isolation mechanism is compatible with the processing technology of the protected MEMS device, can be synchronously processed, can enable the mechanical bandwidth of the protected MEMS device not to be influenced by adjusting the size of the structure, and effectively reduces the coupling effect brought by the stress isolation mechanism.
Drawings
FIG. 1 is a schematic diagram of two annular stress isolation mechanisms according to an embodiment of the present invention, wherein (a) corresponds to a 2 θ mode and (b) corresponds to a 4 θ mode;
FIG. 2 is a schematic diagram of two regular octagonal stress isolation mechanisms according to an embodiment of the present invention, wherein (a) corresponds to a 2 θ mode and (b) corresponds to a 4 θ mode;
FIG. 3 is a graph of the standing wave mode shape of an annular stress isolation mechanism according to an embodiment of the present invention;
FIG. 4 is a graph of the standing wave mode shape of the ring structure in an embodiment of the present invention;
FIG. 5 is a graph of the standing wave mode shape of a regular octagonal structure in an embodiment of the invention;
in all the figures, the anchor area represents the area of attachment to the substrate anchor point, and the protected MEMS device is equivalently represented as a system of mass and springs.
Detailed Description
In order to more clearly express the objects, technical solutions and advantages of the present invention, the following derivation is further explained with reference to the drawings and formulas. It is to be understood that the principles herein are to be interpreted as illustrative, and not in a limiting sense.
The invention utilizes the standing wave characteristic of the annular or regular polygon structure to connect the antinode with the substrate anchor point and connect the node with the protected MEMS device anchor point, provides an MEMS stress isolation mechanism with simple structure and good stress isolation effect and a design method thereof, and can be applied to the mechanical design of various MEMS devices.
The MEMS comprises a substrate and an MEMS device with protected interior, the stress isolation mechanism is formed by an annular structure or a regular polygon structure provided with anchor points, and the anchor points are distributed at anti-node points and wave nodes;
the annular structure or the regular polygon structure is deformed under the action of stress in the processing or working process, the deformation mainly occurs at an antinode point, and a node keeps unchanged in position, so that the position of the antinode point of the annular or the regular polygon in the stress isolation mechanism is connected with a substrate anchor point, and the position of the node point of the annular or the regular polygon is connected with an internal protected MEMS device anchor point, so that the stress cannot be conducted to a protected MEMS device, and the stress isolation effect is achieved.
As shown in fig. 1 and fig. 2, the MEMS stress isolation mechanism provided by the present invention includes a ring or regular polygon, and the number of sides of the regular polygon is generally not less than 8. Wherein figures 1 and 2 show a circular and regular octagonal configuration, respectively. The annular or regular octagonal group of antinodes is connected with the substrate anchor points to form anchor areas, the number and the positions of the anchor areas determine the standing wave vibration mode, the nodes are connected with the protected MEMS device anchor points, and a spring-mass system is adopted in the figure to represent the protected MEMS device.
In one embodiment of the invention, the ring-shaped structure and the regular polygon structure have the same thickness, and the axial ring width thereof can be uniform or non-uniform according to the crystal orientation of the silicon wafer.
The free vibration mode of the ring or regular polygon in the stress isolation mechanism comprises an N theta standing wave vibration mode (N >1), an anti-node and a node exist under each vibration mode, and the anti-node and the node are symmetrically distributed, so that the anti-node can be freely deformed in the processing or working process, and the position of the node is always kept unchanged. The ring structure in fig. 1 and 2 has two anchoring modes corresponding to different standing wave vibration modes: FIGS. 1(a) and 2(a) correspond to a 2 θ mode, with nodes 45 ° from antinodes; fig. 1(b) and 2(b) correspond to a 4 θ mode, with the node 22.5 ° from the anti-node.
In one embodiment of the present invention, the stress isolation mechanism is a ring structure (mode shape is a 2 θ standing wave mode shape). Fig. 3 is a stress isolation mechanism with a 2 θ standing wave mode according to the present invention, and it can be seen that the node connected to the anchor point of the MEMS device to be protected is not affected by the tensile stress or the compressive stress of the substrate.
In one embodiment of the present invention, the distribution of anchor points of the ring structure in the stress isolation mechanism can be designed in various ways, and the design range covers all standing wave vibration modes of the ring structure. FIG. 4 shows the simulation results of the 2 theta-8 theta standing wave mode of the ring structure provided by the present invention, wherein the N theta standing wave mode corresponds to the deformation caused by the residual stress or thermal stress. In the result graph, white circles indicate a ring structure to which no stress is applied, and dark patterns indicate simulation cases of different standing wave patterns, and it is seen that the positions of nodes do not change at all times in all standing wave patterns. Connecting an antinode corresponding to each standing wave vibration mode with a substrate anchor point for realizing stress release and ensuring free deformation, and enabling the anchor points on the substrate to be symmetrically distributed on the antinode, so as to ensure uniform annular stress and no influence on the node due to deformation; and the anchor point of the protected MEMS device can be selectively connected with the wave node without being connected completely, so that the protected MEMS device is not influenced by stress deformation.
In one embodiment of the present invention, the regular polygon in the stress isolation mechanism may be any regular polygon, such as regular octagon, regular hexadecimal, etc., and the anchor point design also covers all standing wave vibration modes. Fig. 5 shows the results of simulation of several typical standing wave modes (2 θ, 4 θ, and 8 θ) of the regular octagonal structure, and as a result, in the graph, white regular polygons represent regular polygonal structures to which no stress is applied, and dark mode represents simulation of different standing wave modes, and similarly, the positions of nodes do not change at all times in all standing wave modes. The antinode points corresponding to each standing wave vibration mode are connected with the substrate anchor points, and the anchor points on the substrate are symmetrically distributed on the antinode points; while the anchor point of the protected MEMS device may be selectively connected to the wave node, and need not be connected in its entirety.
The annular structure or the regular polygon structure and the MEMS device protected inside have synchronous and compatible processing technology, synchronous processing can be achieved, meanwhile, the mechanical bandwidth of the protected MEMS device can be unaffected by adjusting the size of the structure, and the coupling effect brought by the stress isolation mechanism is effectively reduced.
The design method of the stress isolation mechanism comprises the following steps:
1) selecting a stress isolation mechanism as an annular structure or a regular polygon structure according to the structures and the shapes of the target substrate and the MEMS device protected inside;
2) determining the order of the N theta standing wave mode according to the number m of anchor areas needing to be fixed on the target substrate, namely determining the value of N, so that N is m;
3) designing anchor points on the annular structure or the regular polygon structure according to the determined standing wave vibration mode, wherein the anchor points are distributed on anti-node points and node points which are distributed on the annular structure or the regular polygon structure at intervals; for the N theta standing wave vibration mode, two adjacent antinode points and node points are separated by 90 degrees/N;
4) connecting the substrate anchor area with a group of anti-node points on the annular structure or the regular polygon structure, so that the substrate anchor area is symmetrically distributed on the anti-node points, thereby ensuring that the annular or regular polygon is uniformly stressed and the deformation of the annular or regular polygon does not influence the node; and connecting the internally protected MEMS device anchor region with the wave nodes on the annular structure or the regular polygon structure, so that the protected MEMS device anchor region is distributed on all or part of the wave nodes symmetrically or asymmetrically, and the specific layout depends on the mechanical design requirement of the protected MEMS device.
In one specific implementation of the invention, the resonance frequency corresponding to the N θ standing wave mode depends on the size of the dimensional parameter of the annular or regular polygon structure, and in order not to affect the mechanical bandwidth of the internally protected MEMS device, the resonance frequency corresponding to the N θ standing wave mode determined in step 2) is three to five times or more of the self mechanical bandwidth of the internally protected MEMS device.
It should be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1.一种MEMS应力隔离机构,所述的MEMS包括基板和内部被保护的MEMS器件,其特征在于,所述应力隔离机构由配置有锚点的环形结构或正多边形结构构成,所述的锚点分布在波腹点和波节点,且分布在波腹点位置的锚点与基板锚点相连,分布在波节点位置的锚点与内部被保护的MEMS器件锚点相连。1. a MEMS stress isolation mechanism, the MEMS comprises a substrate and an internally protected MEMS device, it is characterized in that, the stress isolation mechanism is configured with an annular structure or a regular polygon structure of an anchor point, and the anchor The points are distributed at the anti-nodal point and the wave node, and the anchor points distributed at the anti-node position are connected to the substrate anchor point, and the anchor points distributed at the wave node position are connected to the anchor point of the internally protected MEMS device. 2.根据权利要求1所述的MEMS应力隔离机构,其特征在于,所述正多边形结构的边数不小于8。2 . The MEMS stress isolation mechanism according to claim 1 , wherein the number of sides of the regular polygon structure is not less than 8. 3 . 3.根据权利要求1所述的MEMS应力隔离机构,其特征在于,所述MEMS应力隔离机构与内部被保护的MEMS器件具有同步和兼容的加工工艺。3 . The MEMS stress isolation mechanism according to claim 1 , wherein the MEMS stress isolation mechanism and the internally protected MEMS device have a synchronous and compatible processing technology. 4 . 4.根据权利要求1所述的MEMS应力隔离机构,其特征在于,所述环形结构或正多边形结构的自由振动模态包含Nθ驻波振型,N>1;在每个驻波振型下都存在呈中心对称分布的波腹点和波节点。4. The MEMS stress isolation mechanism according to claim 1, wherein the free vibration mode of the annular structure or the regular polygon structure comprises Nθ standing wave mode shape, N>1; under each standing wave mode shape There are anti-nodes and wave nodes that are symmetrically distributed around the center. 5.根据权利要求4所述的MEMS应力隔离机构,其特征在于,所述Nθ驻波振型对应的谐振频率是内部被保护的MEMS器件自身机械带宽的三至五倍以上。5 . The MEMS stress isolation mechanism according to claim 4 , wherein the resonance frequency corresponding to the Nθ standing wave mode is more than three to five times the mechanical bandwidth of the internally protected MEMS device. 6 . 6.根据权利要求4所述的MEMS应力隔离机构,其特征在于,所述基板锚点对称分布在所述的波腹点上,所述被保护的MEMS器件锚点对称或非对称的分布在所有或部分所述的波节点上。6 . The MEMS stress isolation mechanism according to claim 4 , wherein the anchor points of the substrate are symmetrically distributed on the antinode points, and the anchor points of the protected MEMS device are distributed symmetrically or asymmetrically on the antinode points. 7 . All or part of the wave nodes described. 7.一种权利要求1所述的MEMS应力隔离机构的设计方法,其特征在于,包括以下步骤:7. The design method of MEMS stress isolation mechanism according to claim 1, is characterized in that, comprises the following steps: 1)根据目标基板及内部被保护的MEMS器件的结构和形状,选择应力隔离机构为环形结构或正多边形结构;1) According to the structure and shape of the target substrate and the internally protected MEMS device, the stress isolation mechanism is selected to be a ring structure or a regular polygon structure; 2)根据目标基板上需要固定的锚点数量m,确定Nθ驻波振型的阶数,即确定N的取值,使得N=m;2) According to the number of anchor points m to be fixed on the target substrate, determine the order of the Nθ standing wave mode shape, that is, determine the value of N, so that N=m; 3)根据确定好的驻波振型设计环形结构或正多边形结构上的锚点位置,所述锚点分布在波腹点和波节点,所述的波腹点和波节点间隔分布在环形结构或正多边形结构上;对于Nθ驻波振型,两个相邻的波腹点和波节点间隔90°/N;3) Design the anchor point position on the annular structure or regular polygon structure according to the determined standing wave mode shape, the anchor points are distributed in the antinodes and the wave nodes, and the antinodes and the wave nodes are distributed in the annular structure at intervals. Or on a regular polygonal structure; for the Nθ standing wave mode shape, the two adjacent antinodes and nodes are separated by 90°/N; 4)将基板锚点与环形结构或正多边形结构上的一组波腹点相连,使得基板锚点对称分布在波腹点上;将内部被保护的MEMS器件锚点与环形结构或正多边形结构上的波节点相连,使得被保护的MEMS器件锚点对称或非对称的分布在所有或部分波节点上。4) Connect the anchor points of the substrate to a set of anti-node points on the ring structure or regular polygon structure, so that the anchor points of the substrate are symmetrically distributed on the anti-node points; connect the anchor points of the internally protected MEMS device to the ring structure or regular polygon structure The wave nodes are connected, so that the protected MEMS device anchor points are distributed symmetrically or asymmetrically on all or part of the wave nodes. 8.根据权利要求7所述的MEMS应力隔离机构的设计方法,其特征在于,步骤2)确定的Nθ驻波振型对应的谐振频率是内部被保护的MEMS器件自身机械带宽的三至五倍以上。8. The design method of the MEMS stress isolation mechanism according to claim 7, wherein the resonance frequency corresponding to the Nθ standing wave mode shape determined in step 2) is three to five times the mechanical bandwidth of the internally protected MEMS device itself above.
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