CN112885710A - Preparation method and application of epitaxial wafer of semiconductor - Google Patents
Preparation method and application of epitaxial wafer of semiconductor Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 130
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 131
- 238000000151 deposition Methods 0.000 claims abstract description 99
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 21
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
Abstract
The invention discloses a preparation method and application of an epitaxial wafer of a semiconductor, and relates to the technical field of semiconductors. The preparation method of the epitaxial wafer of the semiconductor comprises the following steps: depositing a heat dissipation layer on a substrate, and depositing an epitaxial layer on the heat dissipation layer to obtain the epitaxial wafer of the semiconductor; or depositing a first functional layer on the substrate, depositing a heat dissipation layer on the first functional layer, depositing a second functional layer on the heat dissipation layer, wherein the first functional layer and the second functional layer form an epitaxial layer, and obtaining the epitaxial wafer of the semiconductor. The epitaxial wafer of the semiconductor prepared by the invention can quickly lead the internal temperature of the epitaxial wafer of the semiconductor to tend to be uniform, so that the heat dissipation effect can be obviously enhanced on the basis of not changing the performance of the epitaxial wafer of the semiconductor, the service life of a semiconductor device is finally prolonged, and the working environment is more stable.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method and application of an epitaxial wafer of a semiconductor.
Background
With the development of science and technology, semiconductor technology has been integrated into the aspects of people's daily life. Devices made of semiconductor materials and having certain functions are collectively called semiconductor devices. The development of semiconductor devices has received much attention, especially for the third generation. The application of the third generation semiconductor device relates to a plurality of fields, such as the field of photovoltaic lighting, electronic power devices, lasers and detectors, microwave devices, power devices, electric automobiles, the field of 5G radio frequency, the field of mobile phone quick charging and the like.
Semiconductor devices can experience thermal losses during operation, which can result in device damage due to high temperatures if any thermal losses are dissipated in the device. In order to make the device work normally and efficiently, the heat dissipation module is very important. The current heat dissipation method is external packaging heat dissipation, a semiconductor device is installed in the middle of a heat sink, heat is dissipated to the periphery by an additional heat sink, and a heat dissipation fan or water cooling is added as necessary to increase heat dissipation efficiency. When a semiconductor device breaks down, the main problems are caused by temperature factors, elements are damaged extremely quickly when being heated excessively, aluminum oxide cannot be used for heat dissipation in cooperation with power increase, copper is used for heat dissipation, the defect that electron current heat collection is caused due to too concentrated heat generation exists, and the power increase of the semiconductor device is close to the limit of the existing packaging heat dissipation technology. Outside encapsulation heat radiation structure, heat conductivity is poor, can lead to the unable realization of the power density of device to break through, and the unable very first time of power device's heat is discharged, and recessive fault rate can't be eliminated always, shortens device life.
Disclosure of Invention
The invention mainly aims to provide a preparation method and application of a semiconductor epitaxial wafer, and aims to prepare a semiconductor epitaxial wafer with high heat dissipation efficiency.
In order to achieve the above object, the present invention provides a method for preparing an epitaxial wafer of a semiconductor, comprising the steps of:
depositing a heat dissipation layer on a substrate, and depositing an epitaxial layer on the heat dissipation layer to obtain the epitaxial wafer of the semiconductor; alternatively, the first and second electrodes may be,
depositing a first functional layer on a substrate, depositing a heat dissipation layer on the first functional layer, depositing a second functional layer on the heat dissipation layer, wherein the first functional layer and the second functional layer form an epitaxial layer, and obtaining the epitaxial wafer of the semiconductor.
Optionally, the material of the heat dissipation layer includes silicon carbide.
Optionally, the heat dissipation layer is deposited by chemical vapor deposition.
Optionally, the deposition temperature of the chemical vapor deposition method is 100-500 ℃; and/or the presence of a gas in the gas,
the gas introduced by the chemical vapor deposition method is SiH4And C3H8The mixed gas of (1).
Optionally, the heat dissipation layer has a thickness of 1 × 10-8～6×10-8m。
Optionally, the step of depositing a heat dissipation layer on the substrate and depositing an epitaxial layer on the heat dissipation layer to obtain the epitaxial wafer of the semiconductor specifically includes:
depositing a heat dissipation layer on a substrate;
depositing and forming a buffer layer on the heat dissipation layer;
and depositing and forming an epitaxial layer on the buffer layer to obtain the epitaxial wafer of the semiconductor.
Optionally, the step of depositing a first functional layer on the substrate, depositing a heat dissipation layer on the first functional layer, and depositing a second functional layer on the heat dissipation layer to obtain the epitaxial wafer of the semiconductor specifically includes:
depositing a buffer layer on the substrate;
depositing and forming a first functional layer on the buffer layer;
depositing and forming a heat dissipation layer on the first functional layer;
and depositing and forming a second functional layer on the heat dissipation layer, wherein the first functional layer and the second functional layer form an epitaxial layer, and obtaining the epitaxial wafer of the semiconductor.
The invention further provides an epitaxial wafer of a semiconductor, comprising:
a substrate;
the epitaxial layer is arranged on the substrate and comprises a first functional layer and a second functional layer which are sequentially overlapped towards the direction far away from the substrate; and the number of the first and second groups,
the heat dissipation layer is arranged between the substrate and the epitaxial layer, or the heat dissipation layer is arranged between the first functional layer and the second functional layer.
The present invention further provides a semiconductor device comprising an epitaxial wafer of a semiconductor as described above.
Optionally, the semiconductor device is a heterojunction bipolar transistor, an insulated gate bipolar transistor, a light emitting diode, a laser diode, an integrated circuit chip, a personal computer, or a high-temperature high-voltage electronic component.
According to the technical scheme, the heat dissipation layer is deposited in the epitaxial wafer of the semiconductor and is arranged inside the epitaxial wafer, namely between the substrate and the epitaxial layer or between the first functional layer and the second functional layer of the epitaxial layer, and the heat dissipation layer does not influence the normal operation of a device after becoming a part of the epitaxial wafer of the semiconductor; in addition, heat conduction is fast, and thermal diffusivity is high, can make the inside temperature of the epitaxial wafer of semiconductor tend to even unanimity fast for on the basis that does not change the epitaxial wafer performance of semiconductor, the radiating effect can obviously strengthen, finally makes semiconductor device's life-span improve, and operational environment is more stable.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of an embodiment of an epitaxial wafer of a semiconductor fabricated in accordance with the present invention;
FIG. 2 is a detailed structural diagram of an epitaxial wafer of the semiconductor shown in FIG. 1;
FIG. 3 is a schematic view of another embodiment of an epitaxial wafer of a semiconductor fabricated in accordance with the present invention;
fig. 4 is a detailed structural diagram of an epitaxial wafer of the semiconductor shown in fig. 3.
The reference numbers illustrate:
| 100 | epitaxial wafer of semiconductor | | Emission area | |
| 1 | |
2e | N-type |
|
| 2 | |
2f | MQW |
|
| 21 | First functional layer | 2g | P-type |
|
| 22 | Second |
3 | |
|
| 2a | |
4 | |
|
| | Base region | 5 | Electrode for electrochemical cell |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as upper, lower, left, right, front, rear, outer and inner … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" appearing throughout includes three juxtapositions, exemplified by "A and/or B" including either A or B or both A and B. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Semiconductor devices can experience thermal losses during operation, which can result in device damage due to high temperatures if any thermal losses are dissipated in the device. In order to make the device work normally and efficiently, the heat dissipation module is very important. The current heat dissipation method is external packaging heat dissipation, a semiconductor device is installed in the middle of a heat sink, heat is dissipated to the periphery by an additional heat sink, and a heat dissipation fan or water cooling is added as necessary to increase heat dissipation efficiency. When a semiconductor device breaks down, the main problems are caused by temperature factors, elements are damaged extremely quickly when being heated excessively, aluminum oxide cannot be used for heat dissipation in cooperation with power increase, copper is used for heat dissipation, the defect that electron current heat collection is caused due to too concentrated heat generation exists, and the power increase of the semiconductor device is close to the limit of the existing packaging heat dissipation technology. Outside encapsulation heat radiation structure, heat conductivity is poor, can lead to the unable realization of the power density of device to break through, and the unable very first time of power device's heat is discharged, and recessive fault rate can't be eliminated always, shortens device life.
In view of this, the present invention provides a method for manufacturing an epitaxial wafer of a semiconductor, which aims to manufacture an epitaxial wafer of a semiconductor with good heat dissipation efficiency. In the drawings of the invention, fig. 1 is a schematic view of an embodiment of an epitaxial wafer of a semiconductor prepared by the invention; FIG. 2 is a detailed structural diagram of an epitaxial wafer of the semiconductor shown in FIG. 1; FIG. 3 is a schematic view of another embodiment of an epitaxial wafer of a semiconductor fabricated in accordance with the present invention; fig. 4 is a detailed structural diagram of an epitaxial wafer of the semiconductor shown in fig. 3.
Referring to fig. 1 and 3, the structure of the epitaxial wafer 100 of the semiconductor prepared by the method for preparing the epitaxial wafer of the semiconductor provided by the invention is shown, specifically, the epitaxial wafer 100 of the semiconductor comprises a substrate 1, an epitaxial layer 2 and a heat dissipation layer 3, wherein the epitaxial layer 2 is arranged on the substrate 1, and the epitaxial layer 2 comprises a first functional layer 21 and a second functional layer 22 which are sequentially stacked towards a direction away from the substrate 1; the heat dissipation layer 3 is provided between the substrate 1 and the epitaxial layer 2, or the heat dissipation layer 3 is provided between the first functional layer 21 and the second functional layer 22.
It can be understood that the epitaxial layer 2 is a main functional part of the semiconductor device and is also a main source of heat generation, on the premise of not affecting the operation of the semiconductor device, the heat dissipation layer 3 is arranged at a position (such as a PN junction) close to a main heat generating component, while the heat generation positions of the epitaxial layers 2 of different semiconductor devices are different, and the heat dissipation layer 3 can be arranged between the substrate 1 and the epitaxial layer 2 or inside the epitaxial layer 2 according to requirements, so that the heat dissipation is more timely and the flexibility is strong.
When the materials of the substrate 1 and the epitaxial layer 2 are different, preferably, in an embodiment of the present invention, referring to fig. 1, the heat dissipation layer 3 is disposed between the substrate 1 and the epitaxial layer 2, the semiconductor epitaxial wafer 100 further includes a buffer layer 4 disposed between the heat dissipation layer 3 and the epitaxial layer 2, and the buffer layer 4 is used to adjust lattice mismatch, reduce dislocations to increase the quality of the epitaxial layer 2, and ensure that the prepared semiconductor device has superior performance.
In another embodiment of the present invention, referring to fig. 3, the heat dissipation layer 3 is disposed between the first functional layer 21 and the second functional layer 22, and the epitaxial wafer 100 of the semiconductor further includes the buffer layer 4 disposed between the substrate 1 and the first functional layer 21, and similarly, the buffer layer 4 is added to adjust lattice mismatch, reduce dislocations to increase the quality of the epitaxial layer 2, and ensure that the prepared semiconductor device has superior performance.
The material of the substrate 1 is not limited in the present invention, and includes but is not limited to the first generation, second generation and third generation semiconductor substrates 1 such as Si, Ge, InP, GaAs, GaN, SiC and ZnSe, and preferably, the substrate 1 is made of silicon carbide, gallium nitride, gallium arsenide, sapphire or silicon wafer.
The present invention is also not limited with respect to the thickness of the heat dissipation layer 3, and preferably, the thickness of the heat dissipation layer 3 is 1 × 10-8～6×10-8And m is selected. Within the above thickness range, the epitaxial wafer 100 of a semiconductor has excellent performance and a good heat dissipation effect.
In an embodiment of the present invention, referring to fig. 3, the semiconductor epitaxial wafer 100 includes an epitaxial wafer of a diode, for example, an epitaxial wafer of a gan led, and the heat dissipation layer 3 is disposed between the substrate 1 and the epitaxial layer 2.
In the present embodiment, in the epitaxial wafer of the gallium nitride light emitting diode, the epitaxial layer 2 includes an N-type gallium nitride layer 2e, an MQW multiple quantum well layer 2f, and a P-type gallium nitride layer 2g stacked in this order in a direction away from the substrate 1, the N-type gallium nitride layer 2e constitutes the first functional layer 21, and the P-type gallium nitride layer 2g constitutes the second functional layer 22. An electrode 5 is respectively led out from the P-type gallium nitride layer 2g and the N-type gallium nitride layer 2e, in the epitaxial wafer of the gallium nitride light-emitting diode, a region mainly generating heat is between the MQW multi-quantum well layer 2f and the P-type gallium nitride layer 2g, but because the heat dissipation layer 3 cannot be added between the N-type gallium nitride layer 2e and the MQW multi-quantum well layer 2f, if the heat dissipation layer 3 is added, the working performance of the whole device is damaged, and therefore in the epitaxial wafer 100 of the semiconductor, the heat dissipation layer 3 is positioned between the epitaxial layer 2 and the substrate 1.
In yet another embodiment of the present invention, the epitaxial wafer 100 of a semiconductor comprises an epitaxial wafer of a transistor, for example an epitaxial wafer of a Heterojunction Bipolar Transistor (HBT), the heat sink layer 3 being provided between the first functional layer 21 and the second functional layer 22.
Specifically, referring to fig. 4, in an epitaxial wafer of a heterojunction bipolar transistor, an epitaxial layer 2 includes a collector region 2a, a base region 2b, and an emitter region 2c stacked in sequence in a direction away from a substrate 1, the collector region 2a forms a first functional layer 21, the base region 2b forms a second functional layer 22, and an electrode 5 is respectively led out from the collector region 2a, the base region 2b, and the emitter region 2 c. The HBT mainly operates with carriers in PN junctions of the emitter region 2c and the base region 2b, the emitter region 2c and the base region 2b are main operating regions, and in this operating region, the carriers are recombined to generate heat energy, and the heat generated by the operation of the epitaxial wafer 100 of the semiconductor is mainly the heat generated when the carriers of the emitter region 2c and the base region 2b are recombined (i.e., the heat energy generated during the operation), and the heat energy needs to be conducted to the outside of the epitaxial wafer 100 of the semiconductor, and the closer the heat dissipation layer 3 is, the better the heat dissipation effect is, therefore, the heat dissipation layer 3 is disposed between the collector region 2a and the base region 2b and is closest to the PN junctions of the emitter region 2c and the base region 2b, and the best heat dissipation effect is achieved.
It is understood that in the HBT, a Si — GaAs substrate 1 is selected, and a heat dissipation layer 3 is grown on the substrate 1 by CVD (chemical vapor deposition), because the epitaxial layer 2 required for the HBT is mainly AlGaAs and GaAs, and the epitaxial layer 2 has lattice mismatch with the substrate 1, and needs to be adjusted by adding a buffer layer 4. And growing the required epitaxial layer 2 on the buffer layer 4 to prepare the required epitaxial wafer.
Further, the method for preparing the epitaxial wafer 100 of the semiconductor, provided by the invention, comprises the following steps:
and depositing a heat dissipation layer 3 on the substrate 1, and depositing an epitaxial layer 2 on the heat dissipation layer 3 to obtain the epitaxial wafer 100 of the semiconductor. The above steps are based on one embodiment of the present invention to produce an epitaxial wafer 100 of a semiconductor as shown in fig. 1 and 2.
Depositing a first functional layer 21 on a substrate 1, depositing a heat dissipation layer 3 on the first functional layer 21, depositing a second functional layer 22 on the heat dissipation layer 3, wherein the first functional layer 21 and the second functional layer 22 form an epitaxial layer, and obtaining the epitaxial wafer 100 of the semiconductor. The above steps are based on another embodiment of the present invention to prepare an epitaxial wafer 100 of a semiconductor as shown in fig. 3 and 4.
In the technical scheme of the invention, the preparation method of the epitaxial wafer 100 of the semiconductor is provided, the heat dissipation layer 3 is deposited in the epitaxial wafer 100 of the semiconductor, and the heat dissipation layer 3 is arranged inside the epitaxial wafer, namely between the substrate 1 and the epitaxial layer 2, or between the first functional layer 21 and the second functional layer 22 of the epitaxial layer 2, so that the heat dissipation layer 3 does not influence the normal operation of a device after becoming a part of the epitaxial wafer 100 of the semiconductor; in addition, heat conduction is fast, and thermal diffusivity is high, can make the inside temperature of semiconductor epitaxial wafer 100 tend to even unanimity fast for on the basis that does not change the epitaxial wafer 100 performance of semiconductor, the radiating effect can obviously be strengthened, finally makes semiconductor device's life-span improve, and operational environment is more stable.
Preferably, the material of the heat dissipation layer 3 comprises silicon carbide, more preferably, the silicon carbide is beta-silicon carbide because of its low thermal expansion coefficient (1.3 × 10)-6 K -120 ℃), after the semiconductor is combined with the interface, the stress generated by heating the interface is extremely low, and the normal operation of the device cannot be influenced; in addition, the thermal conductivity of beta-silicon carbide is as high as 20w/(cm.k), fast heat conduction, high thermal diffusivity of 7.2-11.6 cm2And/s, the temperature inside the semiconductor epitaxial wafer 100 can be quickly made to be uniform, so that the heat dissipation effect can be obviously enhanced on the basis of not changing the performance of the semiconductor epitaxial wafer 100, the service life of a semiconductor device is finally prolonged, and the working environment is more stable.
The deposition manner of the heat dissipation layer 3, the first functional layer 21 and the second functional layer 22 is not limited in the present invention, and preferably, the heat dissipation layer 3 is deposited by a chemical vapor deposition method. Chemical Vapor Deposition (CVD) is a process of generating solid deposits by using gaseous or Vapor substances to react on a gas-phase or gas-solid interface, and the Chemical Vapor Deposition method is adopted, so that the parameters of Deposition can be adjusted, the Chemical composition, morphology, crystal structure, grain size and the like of a coating can be effectively controlled, the equipment is simple, and the operation and maintenance are convenient.
Further, the deposition temperature of the chemical vapor deposition method is 100-500 ℃, and the obtained heat dissipation layer 3 is stable in morphology, crystal structure and grain size and uniform in thickness at the deposition temperature.
The gas introduced by the chemical vapor deposition method is SiH4And C3H8The main chemical reactions occurring during the chemical vapor deposition of the mixed gas are as follows:
3SiH4+C3H8→3SiC+10H2
further, in an embodiment, when the buffer layer 4 is needed, depositing a heat dissipation layer 3 on the substrate 1, and depositing an epitaxial layer 2 on the heat dissipation layer 3, to obtain the epitaxial wafer 100 of the semiconductor specifically includes:
s10, depositing a heat dissipation layer 3 on the substrate 1;
s20, depositing and forming a buffer layer 4 on the heat dissipation layer 3;
and S30, depositing and forming an epitaxial layer 2 on the buffer layer 4 to obtain the epitaxial wafer 100 of the semiconductor.
Similarly, in another embodiment, when the buffer layer 4 is needed, the steps of depositing the first functional layer 21 on the substrate 1, depositing the heat dissipation layer 3 on the first functional layer 21, and depositing the second functional layer 22 on the heat dissipation layer 3 to obtain the epitaxial wafer 100 of the semiconductor specifically include:
s100, depositing and forming a buffer layer 4 on the substrate 1;
s200, depositing and forming a first functional layer 21 on the buffer layer 4;
s300, depositing and forming a heat dissipation layer 3 on the first functional layer 21;
s400, depositing and forming a second functional layer 22 on the heat dissipation layer 3, wherein the first functional layer 21 and the second functional layer 22 form an epitaxial layer, and obtaining the epitaxial wafer 100 of the semiconductor.
The present invention further provides a semiconductor device comprising the epitaxial wafer 100 of the semiconductor prepared by the method as provided above. The epitaxial wafer 100 of the semiconductor is subjected to a semiconductor processing process (including but not limited to photolithography, deposition, etching, etc.) to prepare a semiconductor device. Compared with the existing semiconductor device, the semiconductor device with the heat dissipation layer 3 has the advantages that the heat dissipation effect is obviously improved, the voltage born by the semiconductor device is larger when the semiconductor device is used as a power amplifier, the working stability of the device is ensured because no heat is accumulated, and the service life is greatly prolonged.
Further, the semiconductor device also includes a heat dissipation module disposed near the substrate 1 of the epitaxial wafer 100 of the semiconductor. Specifically, the heat dissipation module can be an existing external packaging heat dissipation module, a heat dissipation fan, a water cooling device and the like, the invention does not limit the heat dissipation module, in addition, the heat dissipation module can be in contact with the substrate 1 or not, the heat dissipation layer 3 in the epitaxial wafer 100 of the semiconductor accelerates heat conduction, the external heat dissipation module assists heat dissipation, and the internal and external heat dissipation work simultaneously ensures that the heat conduction is very fast, so that the semiconductor work area can not accumulate heat, and the semiconductor work area can work normally and efficiently.
The present invention is also not limited with respect to the type of semiconductor device, and preferably, the semiconductor device is a heterojunction bipolar transistor, an insulated gate bipolar transistor, a light emitting diode, a laser diode, an integrated circuit chip, a personal computer, or a high-temperature high-voltage electronic component.
The technical solutions of the present invention are further described in detail with reference to the following specific examples, which should be understood as merely illustrative and not limitative.
Example 1
Depositing on the substrate by chemical vapor deposition to form a heat dissipation layer, wherein the heat dissipation layer is made of silicon carbide, and the introduced gas is SiH during chemical vapor deposition4And C3H8The deposition temperature of the mixed gas is 100 ℃, and the deposition thickness is 1 multiplied by 10-8m；
Depositing and forming a buffer layer on the heat dissipation layer;
and depositing an N-type gallium nitride layer, an MQW multi-quantum well layer and a P-type gallium nitride layer on the buffer layer in sequence to form an epitaxial layer, thereby obtaining the epitaxial wafer of the semiconductor.
Example 2
Depositing on the substrate by chemical vapor deposition to form a heat dissipation layer, wherein the heat dissipation layer is made of silicon carbide, and the introduced gas is SiH during chemical vapor deposition4And C3H8The deposition temperature of the mixed gas is 500 ℃, and the deposition thickness is 6 multiplied by 10-8m；
Depositing and forming a buffer layer on the heat dissipation layer;
and depositing an N-type gallium nitride layer, an MQW multi-quantum well layer and a P-type gallium nitride layer on the buffer layer in sequence to form an epitaxial layer, thereby obtaining the epitaxial wafer of the semiconductor.
Example 3
Depositing on the substrate by chemical vapor deposition to form a heat dissipation layer, wherein the heat dissipation layer is made of silicon carbide, and the introduced gas is SiH during chemical vapor deposition4And C3H8The deposition temperature of the mixed gas is 250 ℃, and the deposition thickness is 3 multiplied by 10-8m；
Depositing and forming a buffer layer on the heat dissipation layer;
and depositing an N-type gallium nitride layer, an MQW multi-quantum well layer and a P-type gallium nitride layer on the buffer layer in sequence to form an epitaxial layer, thereby obtaining the epitaxial wafer of the semiconductor.
Example 4
Depositing a buffer layer on the substrate;
depositing a collector region on the buffer layer by chemical vapor deposition, wherein the heat dissipation layer is made of silicon carbide, and SiH is introduced as gas during chemical vapor deposition4And C3H8The deposition temperature of the mixed gas is 300 ℃, and the deposition thickness is 4 multiplied by 10-8m；
Depositing and forming a heat dissipation layer on the collector region;
and depositing a base region on the heat dissipation layer, and depositing an emitter region on the base region to obtain the semiconductor epitaxial wafer.
Example 5
Depositing a buffer layer on the substrate;
depositing a collector region on the buffer layer by chemical vapor deposition, wherein the heat dissipation layer is made of silicon carbide, and SiH is introduced as gas during chemical vapor deposition4And C3H8The deposition temperature of the mixed gas is 400 ℃, and the deposition thickness is 2 multiplied by 10-8m；
Depositing and forming a heat dissipation layer on the collector region;
and depositing a base region on the heat dissipation layer, and depositing an emitter region on the base region to obtain the semiconductor epitaxial wafer.
Example 6
Depositing a buffer layer on the substrate;
depositing a collector region on the buffer layer by chemical vapor deposition, wherein the heat dissipation layer is made of silicon carbide, and SiH is introduced as gas during chemical vapor deposition4And C3H8The deposition temperature of the mixed gas is 200 ℃, and the deposition thickness is 5 multiplied by 10-8m；
Depositing and forming a heat dissipation layer on the collector region;
and depositing a base region on the heat dissipation layer, and depositing an emitter region on the base region to obtain the semiconductor epitaxial wafer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A preparation method of an epitaxial wafer of a semiconductor is characterized by comprising the following steps:
depositing a heat dissipation layer on a substrate, and depositing an epitaxial layer on the heat dissipation layer to obtain the epitaxial wafer of the semiconductor; alternatively, the first and second electrodes may be,
depositing a first functional layer on a substrate, depositing a heat dissipation layer on the first functional layer, depositing a second functional layer on the heat dissipation layer, wherein the first functional layer and the second functional layer form an epitaxial layer, and obtaining the epitaxial wafer of the semiconductor.
2. A method for manufacturing an epitaxial wafer for semiconductors according to claim 1, wherein the material of the heat dissipation layer comprises silicon carbide.
3. A method for producing an epitaxial wafer for semiconductors according to claim 2, wherein the heat dissipation layer is deposited by a chemical vapor deposition method.
4. A method for preparing an epitaxial wafer of a semiconductor according to claim 3, wherein the deposition temperature of the chemical vapor deposition method is 100 to 500 ℃; and/or the presence of a gas in the gas,
the gas introduced by the chemical vapor deposition method is SiH4And C3H8The mixed gas of (1).
5. A method for producing an epitaxial wafer of a semiconductor according to claim 1, wherein the heat dissipation layer has a thickness of 1 x 10-8～6×10-8m。
6. The method of manufacturing an epitaxial wafer for a semiconductor according to claim 1, wherein the step of depositing a heat dissipation layer on the substrate and depositing an epitaxial layer on the heat dissipation layer to obtain the epitaxial wafer for a semiconductor specifically comprises:
depositing a heat dissipation layer on a substrate;
depositing and forming a buffer layer on the heat dissipation layer;
and depositing and forming an epitaxial layer on the buffer layer to obtain the epitaxial wafer of the semiconductor.
7. The method according to claim 1, wherein the step of depositing a first functional layer on the substrate, depositing a heat dissipation layer on the first functional layer, and depositing a second functional layer on the heat dissipation layer to obtain the semiconductor epitaxial wafer specifically comprises:
depositing a buffer layer on the substrate;
depositing and forming a first functional layer on the buffer layer;
depositing and forming a heat dissipation layer on the first functional layer;
and depositing and forming a second functional layer on the heat dissipation layer, wherein the first functional layer and the second functional layer form an epitaxial layer, and obtaining the epitaxial wafer of the semiconductor.
8. An epitaxial wafer for a semiconductor, comprising:
a substrate;
the epitaxial layer is arranged on the substrate and comprises a first functional layer and a second functional layer which are sequentially overlapped towards the direction far away from the substrate; and the number of the first and second groups,
the heat dissipation layer is arranged between the substrate and the epitaxial layer, or the heat dissipation layer is arranged between the first functional layer and the second functional layer.
9. A semiconductor device characterized by comprising an epitaxial wafer of the semiconductor of claim 8.
10. The semiconductor device according to claim 9, wherein the semiconductor device is a heterojunction bipolar transistor, an insulated gate bipolar transistor, a light-emitting diode, a laser diode, an integrated circuit chip, a personal computer, or a high-temperature high-voltage electronic component.
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