CN112882340A - Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision - Google Patents
Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision Download PDFInfo
- Publication number
- CN112882340A CN112882340A CN202110469605.5A CN202110469605A CN112882340A CN 112882340 A CN112882340 A CN 112882340A CN 202110469605 A CN202110469605 A CN 202110469605A CN 112882340 A CN112882340 A CN 112882340A
- Authority
- CN
- China
- Prior art keywords
- substrate
- mark
- measurement
- monitoring
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photomask, a monitoring sheet and a method for monitoring the cleaning precision of the surface of a wafer, when the photomask or the monitoring sheet is used for monitoring the cleaning precision of the surface of the wafer, after the surface of the wafer is cleaned by photoresist, the distance between the actual interface of the residual photoresist layer and a dielectric layer and the center of the substrate can be quickly determined (namely read out) by means of the distance between the actual interface of the residual photoresist layer and the dielectric layer and the center of the substrate, and the cleaning precision of the surface of the wafer can be quickly obtained according to the difference between the distance and the target distance, the error is small, the monitoring can be carried out in the maintenance stage of a machine, the operation monitoring can be carried out in the operation process of the machine, the real-time monitoring is realized, the monitoring efficiency is improved, the waste of equipment resources and materials is reduced, and further, the problem of overlarge deviation of the cleaning precision of the surface of, further reducing the residual defect of the photoresist on the surface of the wafer after cleaning and improving the yield of the photoetching process.
Description
Technical Field
The invention relates to the technical field of semiconductor device manufacturing, in particular to a photomask, a monitoring wafer and a method for monitoring the surface cleaning precision of a wafer.
Background
The photolithography process is a technique for transferring a pattern on a mask plate to a substrate through a series of production processes such as glue application, exposure, development and the like. At present, the processes of coating, developing and the like in the photolithography process are usually realized in a spin coater, and wafer back cleaning is an essential step when the spin coater performs the coating and developing processes, so as to effectively reduce the photoresist adhered to the back of the wafer, so as to reduce various problems caused by the adhesion of the photoresist adhered to the back of the wafer, for example, to avoid the problem that the formation of the front image of the wafer is affected by the photoresist adhered to the back of the wafer in the exposure process, and therefore, the precision of wafer back cleaning is one of the important factors affecting the effect of the photolithography process.
At present, the monitoring of the cleaning precision of the back of a wafer in a spin coater is generally realized by manual visual inspection, and the method has the following defects: (1) the visual inspection error is large, and the monitoring can be implemented only in the machine maintenance (PM) stage, and the operation monitoring (routine monitor) cannot be implemented in the machine operation process; (2) due to the fact that operation monitoring cannot be achieved, once the deviation of the cleaning precision of the back of the wafer is too large, the back of the wafer has the defect of residual photoresist, photoetching images on the front of the wafer are poor, the problem of product scrapping is caused, the yield of a photoetching process is further influenced, and equipment resources and materials are wasted.
Disclosure of Invention
The invention aims to provide a photomask, a monitoring sheet and a method for monitoring the surface cleaning precision of a wafer, which can accurately obtain the surface cleaning precision of the wafer and reduce the visual inspection error in the prior art.
In order to solve the above technical problem, the present invention provides a photomask, which includes a substrate and a plurality of first measurement marks formed on the substrate, wherein each of the first measurement marks is distributed at different positions on the substrate, and any two of the first measurement marks having different distances from a center of the substrate have different patterns, and each of the first measurement marks is used for indicating a distance between a position of the first measurement mark and the center of the substrate; each first measuring mark is evolved based on the same first standard mark, the first standard mark is provided with four groups of gratings distributed in four quadrants according to a rectangular coordinate system, each group of gratings is provided with a plurality of grating strips which are parallel to each other, and at least one first measuring mark is absent or added with at least one grating strip compared with the first standard mark.
Based on the same inventive concept, the invention also provides a monitoring sheet, which comprises:
a substrate;
the dielectric layer is formed on the surface of the substrate, and a plurality of second measurement marks are formed in the dielectric layer, wherein each second measurement mark is distributed on different positions of the dielectric layer, the pattern of any two second measurement marks with different distances from the center of the substrate is different, and each second measurement mark is used for representing the distance between the position of the second measurement mark and the center of the substrate; and each second measurement mark is evolved based on the same second standard mark, the second standard mark is provided with four groups of gratings distributed in four quadrants according to a rectangular coordinate system, each group of gratings is provided with a plurality of grating strips which are parallel to each other, and at least one second measurement mark is absent or added with at least one grating strip compared with the second standard mark.
Based on the same inventive concept, the invention also provides a method for monitoring the cleaning precision of the wafer surface, which comprises the following steps:
providing a substrate with a surface covered with a dielectric layer, and photoetching and etching the dielectric layer by means of a photomask to form a corresponding second measurement mark in the dielectric layer, and further covering a photoresist layer on the dielectric layer and the substrate to form a monitoring wafer, or providing the monitoring wafer provided by the invention, wherein the monitoring wafer is provided with a substrate and a dielectric layer which is formed on the substrate and is provided with a corresponding second measurement mark, and the surfaces of the dielectric layer and the substrate are covered with the photoresist layer, wherein the first measurement mark on the photomask corresponds to the second measurement mark on the monitoring wafer one by one;
cleaning the surface of the monitoring wafer with the photoresist layer;
after cleaning is finished, determining an actual interface between the actually remaining photoresist layer on the monitoring sheet and the dielectric layer, and determining a distance between the actual interface and the center of the substrate according to a distance between the actual interface and the center of the substrate, which is represented by a second measurement mark exposed by the actual interface;
and determining the wafer surface cleaning precision according to the distance between the actual interface and the center of the substrate and the position of a corresponding target interface, wherein the target interface is the interface between the residual photoresist layer and the dielectric layer after expected cleaning.
Compared with the prior art, the technical scheme of the invention has at least one of the following beneficial effects:
1. after the photoresist on the surface of the wafer is cleaned, the cleaning precision of the surface of the wafer can be quickly determined (namely read) by means of the interface between the special measurement mark and the residual photoresist and the distance between the special measurement mark and the center of the wafer, wherein the distance is represented by the measurement mark, and the error is small.
2. The monitoring can be implemented in the machine maintenance (PM) stage, the running monitoring (route monitor) can be performed in the machine running process, the real-time monitoring is realized, the monitoring efficiency is improved, and the waste of equipment resources and materials is reduced.
3. The operation monitoring can be carried out in the operation process of the machine table, so that the problem of overlarge deviation of the cleaning precision of the surface of the wafer can be avoided, the residual defect of the photoresist on the surface of the wafer after cleaning is further reduced, and the yield of the photoetching process is improved.
4. When the patterns of the second measurement marks on the monitoring sheet of the invention have a one-to-one corresponding reading relation with the distance between the patterns and the substrate center, in the method for monitoring the wafer surface cleaning precision by using the monitoring sheet, after the photoresist on the monitoring sheet is cleaned, the wafer surface cleaning precision can be quickly obtained by obtaining the distance reading between the actual interface of the residual photoresist layer and the dielectric layer and the substrate center according to the patterns of the second measurement marks exposed by the residual photoresist layer on the monitoring sheet and the difference between the distance reading and the distance between the target interface and the substrate center (namely the target distance).
Drawings
Fig. 1 is a schematic top view of a mask according to an embodiment of the invention.
FIG. 2 is a schematic diagram illustrating an exemplary top view of the first standard mark in the mask shown in FIG. 1.
Fig. 3 is a reading on the ten digit of the two-digit distance values represented by the corresponding measurement marks based on the first standard mark shown in fig. 2 (i.e., the number on the ten digit of the two digits that is different when the measurement mark is two digits away from the center of the substrate).
Fig. 4 is a reading of one of the two-digit distance values represented by the corresponding measurement mark based on the first standard mark shown in fig. 2 (i.e., the number of one of the two different digits when the measurement mark is two digits away from the center of the substrate).
Fig. 5 is a schematic top view of the measurement mark 60 obtained based on the first standard mark shown in fig. 2.
FIG. 6 is a schematic diagram of a top view of a monitor wafer according to an embodiment of the present invention (i.e., a schematic diagram of a wafer having a second measurement mark formed thereon).
Fig. 7 is a schematic top view of a cleaned monitor wafer and a photoresist interface on the surface thereof according to the method for monitoring the cleaning accuracy of the wafer surface.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention. It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout. It will be understood that when an element or layer is referred to as being "on" …, "or" connected to "other elements or layers, it can be directly on, connected to, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …", "directly connected to" other elements or layers, there are no intervening elements or layers present. Although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. Spatial relationship terms such as "below … …", "below", "lower", "above … …", "above", "upper", and the like may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" … …, or "beneath" would then be oriented "on" other elements or features. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
The technical solution proposed by the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a mask that can be used to monitor and accurately determine the accuracy of cleaning the surface of a wafer, such as the accuracy of cleaning the back side of the wafer by a spin coater. The photomask comprises a substrate 100 and a plurality of first measurement marks 101 formed on the substrate 100, wherein each first measurement mark 101 is distributed at different positions on the substrate 100, the pattern of any two first measurement marks 101 with different distances from the center of the substrate 100 is different, and each first measurement mark 101 is used for indicating the distance between the position of the first measurement mark 101 and the center O0 of the substrate 100.
When the pattern on the mask is transferred to the corresponding wafer (i.e., the monitor wafer), second measurement marks (shown as 201 in fig. 6) are formed on the wafer in one-to-one correspondence with the first measurement marks 101 on the mask, and these second measurement marks can represent the distance between the positions of the second measurement marks and the center of the wafer. When the photomask and the wafer are the same in size, the pattern on the photomask is transferred onto the wafer according to the scaling ratio of 1:1, and the sizes of the first measuring mark 101 and the corresponding second measuring mark are 1: 1; when the size of the mask is smaller than the size of the wafer, the pattern on the mask is transferred onto the wafer according to a certain magnification ratio, and the second measurement mark on the wafer is a magnified image of the corresponding first measurement mark 101. In addition, all the patterns on the photomask can be transferred to the corresponding wafer (i.e. monitor wafer) at one time through one exposure, or all the patterns on the photomask can be transferred to the corresponding wafer (i.e. monitor wafer) in batches through step exposure.
In the present embodiment, each of the first measurement marks 101 in the reticle is evolved based on the same first standard mark 101 s.
Referring to fig. 2, the first standard mark 101s has four sets of gratings distributed in four quadrants I-IV of a rectangular coordinate system, each set of gratings having a plurality of grating strips 101a parallel to each other. As an example, four sets of gratings are identical, only the placing directions are different, specifically, the placing directions of the gratings in the first quadrant I and the third quadrant III are parallel to each other, the placing directions of the gratings in the second quadrant II and the fourth quadrant IV are parallel to each other, and the placing directions of the gratings in the first quadrant I and the second quadrant II are perpendicular to each other.
The area occupied by the first standard mark 101s is a square with a side length of W1, four quadrants I to IV of the area divide the first standard mark 101s into four equal parts, the grating bars 101a in each quadrant are uniformly distributed, and the line width W3 of the grating bar 101a is equal to the line width W4 of the space between two adjacent grating bars 101a, that is, W3= W4. In the first standard mark 101s, the number of the grating strips in each quadrant is the same and is 1-100.
Further alternatively, in the first standard mark 101s, the number of grating bars in each group of gratings is n, n ≧ 2, and when the line width W3 of the grating bar 101a and the line width W4 of the space between two adjacent grating bars 101a are equal (i.e., W3= W4), the overall width W2 of each group of gratings is equal to the length thereof, i.e., W2= (n-1) = W3.
Further, the distance W5= W3 between the outermost boundary of each grating and the boundary of the region occupied by the first standard mark 101 s.
Referring to fig. 3 to 5, in the present embodiment, the grating bars 101a in the first quadrant and the third quadrant of the first standard mark 101s are arranged horizontally (that is, the length direction of each grating bar 101a in the two quadrants is the horizontal direction in the drawing), the grating bars 101a in the second quadrant and the fourth quadrant are arranged longitudinally (that is, the length direction of each grating bar 101a in the two quadrants is the vertical direction in the drawing), the grating bars 101a in the first quadrant and the third quadrant are sequentially defined as the first grating bar, the second grating bar, …, and the fifth grating bar in the quadrant along the top-to-bottom direction, and the grating bars 101a in the second quadrant and the fourth quadrant are sequentially defined as the first grating bar, the second grating bar, the …, and the fifth grating bar in the quadrant along the left-to-right direction. By adaptively removing one or more grating strips 101a in the first to fourth quadrants of the first standard mark 101s, and removing at most one grating strip 101a in each quadrant, a corresponding first measurement mark representing a different distance from the substrate center O1 is evolved. The method specifically comprises the following steps: the value on the ten-digit position representing each first measurement mark two digits distant from the substrate center O1 is obtained by removing one grating stripe 101a in the second quadrant or one grating stripe 101a in the third quadrant of the first standard mark 101s, and the value on the one-digit position representing each first measurement mark two digits distant from the substrate center O1 is obtained by removing one grating stripe 101a in the first quadrant or one grating stripe 101a in the fourth quadrant of the first standard mark 101s, thereby developing each first measurement mark 101. That is, the number of grating strips 101a in each quadrant of the respective first measurement marks 101 is at most one less than the number of grating strips 101a in the quadrant corresponding to the first standard mark 101 s. I.e. the total amount of grating strips in each of said first measurement marks 101 is less than the total amount of grating strips of said first standard mark 101 s.
When the photomask of the embodiment is used for manufacturing a monitoring sheet for monitoring the cleaning precision of the surface of the wafer and further monitoring the cleaning precision of the surface of the wafer through the monitoring sheet, after the pattern on the photomask is transferred to the monitoring sheet, second measurement marks (shown as 201 in fig. 6) corresponding to the first measurement marks 101 on the photomask one to one are formed on the monitoring sheet, and the cleaning precision of the photoresist (i.e., the cleaning precision of the surface of the wafer) can be determined according to the second measurement marks exposed by the remaining photoresist layer on the monitoring sheet only by coating the photoresist on the surface of the monitoring sheet and cleaning the photoresist. In the process, in order to obtain the precision of cleaning the photoresist (i.e. the precision of cleaning the surface of the wafer) more intuitively and efficiently, a one-to-one correspondence reading relationship between the distance between the position of the corresponding second measurement mark on the wafer and the center of the wafer and the unique pattern can be established in advance according to the unique pattern of each first measurement mark on the photomask, i.e. after the unique pattern of the second measurement mark corresponding to the first measurement mark is recognized from the wafer, the distance between the position of the second measurement mark and the center of the wafer can be directly read out according to the unique pattern of the second measurement mark, so that after the photoresist is coated on the surface of the monitoring piece and the photoresist is cleaned, the distance between the actual interface of the residual photoresist layer and the dielectric layer on the monitoring piece and the center of the monitoring piece can be directly read out according to the unique pattern of the second measurement mark exposed by the residual photoresist layer on the monitoring piece, then, the distance is compared with the target distance (for example, difference is made), and the wafer surface cleaning precision can be obtained.
Obviously, in this method for directly obtaining the distance between the interface of the remaining photoresist layer and the dielectric layer on the monitor wafer and the center of the monitor wafer through the reading correspondence between the specific pattern of the second measurement mark and the corresponding distance, the design (i.e. the preset definition) of the pattern of each first measurement mark on the reticle and the reading of the distance between the pattern of the corresponding first measurement mark and the center of the substrate needs to be performed in combination with the area correspondence (i.e. the magnification of the photolithography process) of the reticle and the monitor wafer, and the line width and the pitch of the grating bars in each quadrant of the first standard mark and the pitch between the adjacent first measurement marks arranged along the same straight line are designed, so that the offset distance between the interface of the remaining photoresist layer and the second measurement mark and the center of the second measurement mark can be directly added on the basis of the reading of the distance corresponding to the second measurement mark, and directly reading the distance between the interface of the residual photoresist layer and the dielectric layer on the monitoring sheet and the center of the monitoring sheet so as to obtain the surface cleaning precision of the wafer.
As an example, the following definition is made for the reading of the distance from the center of the substrate corresponding to the pattern of the respective first measurement marks on the reticle:
(1) the reading in the ten digits defines:
the first measuring mark 101 missing the first grating strip in the second quadrant of the first standard mark 101s, the number in the ten digit thereof being 1;
the first measuring mark 101 missing the second grating strip in the second quadrant of the first standard mark 101s, the number in the ten digit thereof being 2;
the first measuring mark 101 missing the third grating stripe in the second quadrant of the first standard mark 101s has a number of 3 in the ten position;
a first measuring mark 101 missing a fourth grating strip in the second quadrant of the first standard mark 101s, the number in the tens position being 4;
the first measurement mark 101 missing the fifth grating strip in the second quadrant of the first standard mark 101s, the number in the ten digit thereof being 5;
the first measurement mark 101 missing the first grating strip in the third quadrant of the first standard mark 101s has a number of 6 in the ten's place;
the first measuring mark 101 missing the second grating strip in the third quadrant of the first standard mark 101s has a number of 7 in the ten digit;
the first measuring mark 101 missing the third grating stripe in the third quadrant of the first standard mark 101s, the number in the ten position thereof being 8;
the first measuring mark 101 missing the fourth grating strip in the third quadrant of the first standard mark 101s, the number in the ten position thereof being 9;
the number of tens of the first measurement mark 101 missing the fifth grating strip in the third quadrant of the first standard mark 101s is 0.
(2) The reading in units defines:
a first measurement mark 101 missing a first grating stripe in a first quadrant of the first standard mark 101s, whose number in bits is 1;
the first measurement mark 101 of the second grating stripe in the first quadrant of the first standard mark 101s is missing, the number of bits thereof is 2;
the number of bits of a mark obtained by missing the third grating strip in the first quadrant of the first standard mark 101s is 3;
a first measuring mark 101 missing a fourth grating strip in the first quadrant of the first standard mark 101s, whose number in bits is 4;
the first measurement mark 101 missing the fifth grating stripe in the first quadrant of the first standard mark 101s, the number in bits thereof being 5;
the first measurement mark 101 missing the first grating stripe in the fourth quadrant of the first standard mark 101s, has a number of bits of 6;
the first measuring mark 101 of the second grating stripe in the fourth quadrant of the first standard mark 101s is missing, the number of bits thereof is 7;
the first measurement mark 101 missing the third grating stripe in the fourth quadrant of the first standard mark 101s, has a number of bits of 8;
the first measurement mark 101 missing the fourth grating strip 101a in the fourth quadrant of the first standard mark 101s has a number of bits of 9;
the first measurement mark 101 missing the fifth grating stripe 101a in the fourth quadrant of the first standard mark 101s has a number of 0 in one bit.
Thus, by the regular combination of the reading definition in the ones place and the reading definition in the tens place, the first measurement mark 101 whose corresponding reading is a double-digit number can be obtained. Specifically, please refer to fig. 1 and fig. 5, taking the first measurement mark 60 with a reading of 60 as an example, it is set up as follows: with respect to the first reference mark 101s shown in fig. 2, the first grating strip is absent in the third quadrant and the fifth grating strip is absent in the fourth quadrant.
It should be noted that the method for developing each first measurement mark based on the first standard mark is only an example of implementation of the technical solution of the present invention, and the technical solution of the present invention is not limited thereto, and in other embodiments of the present invention, when there are five grating bars in each grating group of the first standard mark, the corresponding reading on the ten-digit position may be defined by the absence of the grating bars in the first quadrant or the second quadrant, and the reading on the one-digit position may be defined by the absence of the grating bars in the third quadrant or the fourth quadrant, of course, two or more grating bars may be absent in the corresponding quadrant to define the corresponding reading on the hundred-digit position, the reading on the thousand-digit position, the reading on the ten-digit position, and the like. In addition, in other embodiments of the present invention, the number of grating bars in each grating group of the first standard mark may also be less than 5, or greater than 5, for example, 6 to 100, and the like, so that the corresponding first measurement mark may be evolved by making the grating bars in the corresponding quadrant of the first standard mark missing, and the evolution mechanism is similar to the above-mentioned mechanism for evolving the corresponding first measurement mark based on the first standard mark having 5 grating bars in each quadrant, and will not be described in detail here. Of course, in other embodiments of the present invention, when the number of grating strips in each set of gratings of the set first standard mark is small (for example, 1 to 5 grating strips) and the outermost boundary of the grating is farther from the boundary of the area where the first standard mark is located, the corresponding units, tens, hundreds, thousands, tens, etc. of the reading corresponding to the corresponding first measurement mark may also be defined by adding a corresponding number (for example, adding one or more) of grating strips in the corresponding quadrant of the first standard mark.
Obviously, when the areas of the photomask divided for the first measurement marks are equal, the more the number of grating bars in the quadrant with the largest number of grating bars in all the quadrants of all the first measurement marks, the more accurate the value of the wafer surface cleaning precision obtained subsequently.
In order to make the photomask of the present invention more accurate, more convenient and faster for monitoring and determining the wafer surface cleaning precision, in the embodiment, referring to fig. 1, in the photomask, a plurality of first measurement marks 101 are uniformly distributed on a circle which takes the center of the substrate 100 as the center of circle and takes the corresponding distance between the center of the substrate 100 and the center O0 as the radius. Optionally, an X-Y rectangular coordinate system is established with the center O0 of the substrate 100 as a coordinate, the first measurement marks 101 are respectively arranged on an X axis and a Y axis of the X-Y rectangular coordinate system, the first measurement marks 101 on the X axis are arranged at equal intervals, and the first measurement marks 101 on the Y axis are also arranged at equal intervals, that is, the first measurement marks 101 used for indicating the distance to the center O0 of the substrate 100 may be respectively arranged at the upper, lower, left, and right positions of a corresponding circle. That is, in the present invention, the first measurement marks 101 equal to the distance between the centers O0 of the substrates 100 are the same, that is, the readings of the distances between the positions indicated by the four first measurement marks 101 on the same circle and the center O0 of the substrate are the same.
Referring to fig. 1 to 7, the present invention further provides a monitor wafer, which includes a substrate 200 and a dielectric layer (not shown), wherein the dielectric layer may be at least one of silicon oxide, silicon nitride, silicon oxynitride, etc., the dielectric layer is formed on the surface of the substrate 200, and a plurality of second measurement marks 201 are formed in the dielectric layer.
Each of the second measurement marks 201 is distributed on a different position of the dielectric layer, and any two of the second measurement marks 201 having different distances from the center O2 of the substrate 200 have different patterns, and each of the second measurement marks 201 is used to indicate a distance between a position of the second measurement mark 201 and the center O2 of the substrate 200. Wherein each of the second measurement marks 201 is evolved based on the same second standard mark (not shown).
In this embodiment, the second standard mark corresponds to (or is the same as) the first standard mark in the photomask, and has four sets of gratings distributed in four quadrants according to a rectangular coordinate system, where each set of gratings has a plurality of grating bars parallel to each other. Each second measurement mark 201 corresponds to (or is identical to) the first measurement mark described above, and at least one of the second measurement marks 201 lacks or adds at least one grating strip as compared to the second standard mark. As an example, the total number of grating bars in each of the second measurement marks 201 is less than that of the second standard mark. In the second standard mark, the placing directions of the gratings in the first quadrant and the third quadrant are parallel to each other, the placing directions of the gratings in the second quadrant and the fourth quadrant are parallel to each other, and the placing directions of the gratings in the first quadrant and the second quadrant are perpendicular to each other. Optionally, in the second standard mark, the number of the grating strips in each quadrant is the same, and is 1 to 100.
A plurality of the second measurement marks 201 are distributed on a circle centered at the center O2 of the substrate 200 and having a radius corresponding to a distance from the center O2 of the substrate 200.
In addition, the specific structure of the second standard mark and the specific structure of the second measurement mark 201 may refer to the description about the first standard mark, and the specific structure of each second measurement mark may refer to the description about the first measurement mark, which is not repeated herein.
Optionally, the monitoring wafer further includes a coated and baked photoresist, and the photoresist covers the dielectric layer and the surface of the substrate 200 exposed by the dielectric layer. The photoresist may be coated and cleaned by an apparatus such as a spin coater, which is preferably a macromolecular photoresist known in the art, to avoid the problem of contamination of the stage (chuck) due to contact of the photoresist with the stage when the surface cleaning accuracy is monitored using the monitoring sheet.
It should be noted that the second measurement mark in the monitoring sheet of the present invention can be formed in the dielectric layer by any suitable means, such as laser ablation printing, metal lift-off process, photolithography in combination with etching, and the like, which are well known to those skilled in the art.
As an example, referring to fig. 1 to fig. 7, in this embodiment, a process of forming a dielectric layer having the second measurement marks 201 includes: firstly, covering a dielectric layer on the surface of a substrate 200 (namely a wafer) by a thermal oxidation method; then, coating a photoresist layer (which can be a positive photoresist or a negative photoresist), and photoetching the photoresist layer by using the photomask to form a patterned photoresist layer, wherein the pattern in the patterned photoresist layer is the same as or opposite to that of the photomask, depending on whether the photoresist is the positive photoresist or the negative photoresist; then, etching the dielectric layer by taking the patterned photoresist layer as a mask, wherein the etching can be dry etching, wet etching or an etching process combining the dry etching and the wet etching, and forming the dielectric layer with a corresponding second measurement mark; and then removing the patterned photoresist layer to obtain a corresponding monitoring wafer. Obviously, the second measurement mark in the dielectric layer is the result of the first measurement mark in the photomask being transferred into the dielectric layer by lithography and etching, namely, when the center of the substrate of the photomask is aligned with the center of the substrate, the second measuring marks in the dielectric layer correspond to the first measuring marks in the photomask one by one, and whether the grating strips in the second measurement mark are bumps or grooves, depending on whether the patterned photoresist layer is a positive photoresist or a negative photoresist, and each second measurement mark can indicate a distance between a position where a center of the second measurement mark is located and the center of the substrate, after a one-to-one correspondence between the pattern of each first measurement mark and its distance from the center of the substrate is established, the pattern of the second measurement marks formed on the monitor wafer, i.e. the distance to the center of the substrate, also establishes a one-to-one correspondence of the readings.
Based on the same inventive concept, referring to fig. 1 to 7, the present invention further provides a method for monitoring the cleaning precision of a wafer surface, which comprises the following steps:
firstly, providing a substrate 200 with a surface covered with a dielectric layer, and performing photoetching and etching on the dielectric layer by using a photomask according to the invention to form a corresponding second measurement mark 201 in the dielectric layer, and further covering the dielectric layer and the substrate 200 with a photoresist layer 202 to form a monitoring wafer (i.e. a wafer subjected to corresponding processing), or providing the monitoring wafer (i.e. a wafer subjected to corresponding processing) according to the invention, wherein the monitoring wafer comprises a substrate 200 and a dielectric layer which is formed on the substrate and has a corresponding second measurement mark 201, and the surfaces of the dielectric layer and the substrate 200 are covered with the photoresist layer 202, wherein the first measurement mark 101 on the photomask corresponds to the second measurement mark 201 on the monitoring wafer one to one;
then, cleaning (namely photoresist removing cleaning) is carried out on the surface of the monitoring piece with the photoresist layer, and the monitoring piece can be inverted before cleaning, so that the surface of the monitoring piece with the photoresist layer faces downwards, the photoresist layer can contact with photoresist cleaning liquid, and the surface of the monitoring piece opposite to the surface with the photoresist layer is prevented from being cleaned;
then, after the cleaning is finished, determining an actual interface 202a between the actually remaining photoresist layer 202 and the dielectric layer on the monitor wafer, where the interface 202a may just fall on a certain second measurement mark or may just fall between two adjacent second measurement marks, and determining a distance between the actual interface 202a and the center O2 of the substrate 200 according to a distance between the second measurement mark exposed by the actual interface 202a and the center O2 of the substrate 200, specifically, when the readings of the second measurement mark gradually increase along the direction from the center O2 of the substrate 200 to the edge of the substrate 200, determining readings and patterns of the corresponding second measurement marks at the actual interface 202a according to the pattern of the second measurement marks completely exposed by the remaining photoresist layer and the reading arrangement rules of all the exposed second measurement marks, the offset distance of the actual interface 202a from the center of the second measurement mark is then determined, and the distance between the center O2 of the substrate 200 and the second measurement mark is superimposed with the offset distance to obtain the distance between the actual interface 202a and the center O2 of the substrate 200.
Next, determining the wafer surface cleaning accuracy according to the distance (i.e., the actual distance) between the actual interface 202a and the center O2 of the substrate 200 and the position of the corresponding target interface 202b, wherein the target interface 202b is the interface between the photoresist layer 202 and the dielectric layer which are the rest after the desired cleaning, the distance between the target interface 202b and the center O2 of the substrate 200 is the desired target distance, and the wafer surface cleaning accuracy can be obtained by subtracting the target distance from the distance between the actual interface 202a and the center O2 of the substrate 200.
When the monitoring method for the cleaning precision of the wafer surface is used for monitoring the cleaning precision of the wafer surface, the monitoring precision can reach below 100 mu m, namely, the reading of the distance between the actual interface and the center of the substrate can be accurate to the mu m level.
Referring to fig. 1 to 7, as an example, when the size and area of the substrate (i.e., wafer) of the monitor wafer of the present invention are the same as those of the substrate of the reticle, the first measurement marks on the reticle are transferred to the dielectric layer of the monitor wafer in a 1:1 manner, i.e., the first measurement marks and the second measurement marks have a size of 1:1, and the area occupied by the first standard marks 101s as a whole is 400 μm, the number of grating bars n =5 in each group of gratings, and the first measurement marks are arranged on the X axis and the Y axis of the X-Y rectangular coordinate system in the reticle, and the first measurement marks 101 on the X axis and the first measurement marks 101 on the Y axis are arranged at equal intervals of 600 μm, respectively, in the first standard marks 101s, the whole width W1=400 μm of the first standard marks 101s, and the width W3=20 μm of each grating bar a, the line width W4=20 μm of the spaces between adjacent grating strips 101a, and the length of each grating strip 101a (i.e. the overall width W2 of each group of gratings) is equal to 160 μm, i.e. the dimension of each grating strip 101a is 160 μm by 20 μm. The distance W5= W3=20 μm between the outermost boundary of each grating and the boundary of the region occupied by the first standard mark 101 s.
Referring to fig. 7, after the surface cleaning, the actual interface 202a of the remaining photoresist layer 202 and the dielectric layer is monitored to intersect with the corresponding second measurement mark 201 on the monitoring sheet, and from the pattern of all the second measurement marks 201 completely exposed from the remaining photoresist layer 202 and the arrangement rule of the cleaning precision readings represented by the pattern, the reading of the second measurement mark 201 at the interface 202a is 63, i.e. indicating that the centre of the second measuring mark 201 there is 63mm from the centre O2 of the substrate 200, and the corresponding actual interface 202a of the remaining photoresist layer 202 is offset to the right, by about 60 μm, the distance between the actual interface 202a and the center O2 of the substrate 200 (i.e., the position of the actual interface 202 a) is 63mm +0.06mm =63.06 mm.
Obviously, in the technical solution of this embodiment, after the correspondence relationship between the pattern of each second measurement mark on the monitor wafer and the reading represented by the pattern of each second measurement mark on the monitor wafer and the center of the substrate is predefined, after the surface of the monitor wafer having the photoresist layer is cleaned, the pattern of the second measurement mark and the corresponding distance reading at the actual interface between the remaining photoresist layer and the dielectric layer can be obtained according to the pattern, reading and arrangement rule of all the second measurement marks completely exposed from the remaining photoresist layer, and then the pattern of the second measurement mark and the corresponding distance reading are superimposed with the offset distance of the actual interface relative to the center of the second measurement mark, so that the distance between the actual interface and the center of the substrate can be obtained, and then the actual interface and the target distance are compared to obtain the corresponding wafer surface cleaning accuracy.
When a plurality of second measurement marks 201 are arranged on a circle which takes the center of the substrate 200 of the monitoring wafer as the center of a circle and takes the corresponding distance with the center of the substrate 200 of the monitoring wafer as the radius, after the surface of the monitoring wafer with the photoresist layer is cleaned, a plurality of measurement values of the distance between the actual interface and the center of the substrate can be obtained according to the overlapping condition of the interface 202a of the residual photoresist layer on the monitoring wafer and the corresponding plurality of second measurement marks, and then the average value of the measurement values is obtained, so that the more accurate distance between the actual interface and the center of the substrate is obtained, and further the more accurate cleaning precision of the surface of the wafer is obtained. For example, the actual interface 202a of the remaining photoresist layer 202 and the dielectric layer in fig. 7 intersects with the second measurement mark 201 with four readings 63 on the monitor wafer, and at this time, the measured values (or the readings of the distances) between the actual interface 202a at the second measurement mark 201 with four readings 63 on the monitor wafer and the centers of the substrate at the upper, lower, left and right sides of the monitor wafer can be obtained according to the offset distances between the centers of the second measurement mark 201 with four readings 63 on the monitor wafer and the interfaces 202a of the remaining photoresist layer 202, respectively, and then the four measured values of the distances are further averaged to obtain the average value of the distances between the actual interface 202a and the center of the substrate.
According to the method for monitoring the cleaning precision of the wafer surface, after the photoresist on the wafer surface is cleaned, the distance between the actual interface of the residual photoresist layer and the dielectric layer and the center of the substrate can be quickly determined (namely read) by means of the reading relation between the special second measurement mark and the distance from the special second measurement mark to the center of the substrate, so that the cleaning precision of the wafer surface can be quickly determined, the error is small, the monitoring can be carried out in the maintenance stage of a machine, the operation monitoring can be carried out in the operation process of the machine, the real-time monitoring is realized, the monitoring efficiency is improved, and the waste of equipment resources and materials is reduced. In addition, the operation monitoring can be carried out in the operation process of the machine table, so that the problem of overlarge deviation of the measured value of the cleaning precision of the surface of the wafer can be avoided, the residual defect of the photoresist on the surface of the wafer after cleaning is further reduced, and the yield of the photoetching process is improved.
It should be noted that although in the above embodiments, the X-Y rectangular coordinate system is established with the center of the substrate 100 as the coordinate, and the first measurement marks 101 are respectively arranged on the X axis and the Y axis of the X-Y rectangular coordinate system, the adjacent first measurement marks 101 on the X-axis and the Y-axis are spaced apart from each other, but the technical solution of the present invention is not limited to this case, in other embodiments of the present invention, adjacent first measurement marks 101 in the X-axis and Y-axis may be adjacent, this is because in the first standard mark of the present invention, the arrangement direction of the grating bars in the four quadrants is specifically limited, when the first measurement mark 101 is set in a manner that the reading is large to small in the direction from the left to the center of the substrate along the X-axis, the boundary between adjacent first measurement marks can be determined using the placement direction of the grating strips in each first measurement mark 101. Of course, in this way, the size of the whole area of the first standard mark and the line width and the interval of the grating bars in each quadrant need to be adaptively adjusted relative to the arrangement manner of the intervals between the adjacent first measurement marks 101 on the X axis and the Y axis in the above-mentioned embodiments, so that all the first measurement marks 101 arranged next to each other on the X axis can be shared by the sum of the intervals between the adjacent first measurement marks on the X axis in the above-mentioned embodiments adopting the arrangement manner of the intervals between the adjacent first measurement marks 101 on the X axis.
It should be noted that, because the second measurement mark on the monitoring sheet of the present invention is equivalent to a scale, and can be used for intuitively determining the condition of the remaining photoresist on the edge of the monitoring sheet (i.e. for intuitively determining the processing accuracy on the edge of the monitoring sheet), the technical solution of the present invention is not limited to the manner in which the mask and the monitoring sheet of the present invention are used for monitoring the cleaning accuracy of the wafer surface in each of the above embodiments, and in other embodiments of the present invention, the mask and the monitoring sheet of the present invention (which may or may not be provided with a photoresist layer as required) may also be used for monitoring the accuracy of other wafer edge processing processes.
In addition, in each of the above embodiments, the corresponding relationship between the pattern of the first measurement mark or the second measurement mark and the corresponding reading of the distance is pre-established, so that the corresponding distance can be directly read according to the pattern of the second measurement mark, but the technical solution of the present invention is not limited thereto, and in other embodiments of the present invention, the process of pre-establishing the corresponding relationship between the pattern of the first measurement mark or the second measurement mark and the corresponding reading of the distance may be omitted as needed, and only the first measurement mark in the reticle and the pattern of the second measurement mark in the monitor wafer of the present invention are used to monitor whether the corresponding process meets the requirement, for example, when the monitor wafer of the present invention is used to monitor some other wafer edge processing processes, only the second measurement mark of the wafer surface just exposed to the required pattern or the required pattern is needed to be monitored after the monitor wafer edge processing process is removed The second measurement mark of the pattern is sufficient.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art according to the above disclosure are within the scope of the present invention.
Claims (13)
1. A photomask is characterized by comprising a substrate and a plurality of first measurement marks formed on the substrate, wherein each first measurement mark is distributed on different positions of the substrate, the pattern of any two first measurement marks with different distances from the center of the substrate is different, and each first measurement mark is used for representing the distance between the position of the first measurement mark and the center of the substrate; each first measuring mark is evolved based on the same first standard mark, the first standard mark is provided with four groups of gratings distributed in four quadrants according to a rectangular coordinate system, each group of gratings is provided with a plurality of grating strips which are parallel to each other, and at least one first measuring mark is absent or added with at least one grating strip compared with the first standard mark.
2. The mask of claim 1, wherein in the first standard mark, the gratings in the first quadrant and the third quadrant are arranged in parallel, the gratings in the second quadrant and the fourth quadrant are arranged in parallel, and the gratings in the first quadrant and the second quadrant are arranged in perpendicular.
3. The mask according to claim 1, wherein the number of grating bars in each quadrant in the first standard mark is the same and is 1-100.
4. The mask of claim 3, wherein the total number of grating bars in each of the first measurement marks is less than the total number of grating bars in the first standard mark.
5. The mask according to any of claims 1 to 4, wherein a plurality of the first measurement marks are distributed on a circle having a center at the center of the substrate and a radius at a corresponding distance from the center of the substrate.
6. A monitoring sheet, comprising:
a substrate;
the dielectric layer is formed on the surface of the substrate, and a plurality of second measurement marks are formed in the dielectric layer, wherein each second measurement mark is distributed on different positions of the dielectric layer, the pattern of any two second measurement marks with different distances from the center of the substrate is different, and each second measurement mark is used for representing the distance between the position of the second measurement mark and the center of the substrate; and each second measurement mark is evolved based on the same second standard mark, the second standard mark is provided with four groups of gratings distributed in four quadrants according to a rectangular coordinate system, each group of gratings is provided with a plurality of grating strips which are parallel to each other, and at least one second measurement mark is absent or added with at least one grating strip compared with the second standard mark.
7. The monitoring wafer of claim 6, further comprising a photoresist covering the dielectric layer and the exposed substrate surface of the dielectric layer.
8. The monitoring sheet of claim 6, wherein in the second standard mark, the arrangement directions of the gratings in the first quadrant and the third quadrant are parallel to each other, the arrangement directions of the gratings in the second quadrant and the fourth quadrant are parallel to each other, and the arrangement directions of the gratings in the first quadrant and the second quadrant are perpendicular to each other.
9. The monitoring sheet according to claim 6, wherein the number of the grating bars in each quadrant in the second standard mark is the same, and is 1-100.
10. The monitoring sheet of claim 9, wherein the total number of grating strips in each of the second measurement marks is less than the total number of grating strips in the second standard mark.
11. The monitoring sheet according to any one of claims 6 to 10, wherein a plurality of the second measurement marks are distributed on a circle having a center of the substrate as a center and a radius corresponding to a distance from the center of the substrate.
12. A method for monitoring the cleaning precision of a wafer surface is characterized by comprising the following steps:
providing a substrate with a surface covered with a dielectric layer, and photoetching and etching the dielectric layer by means of the photomask according to any one of claims 1 to 5 to form a corresponding second measurement mark in the dielectric layer, and further covering the dielectric layer and the substrate with a photoresist layer to form a monitoring wafer, or providing the monitoring wafer according to any one of claims 6 to 11, wherein the monitoring wafer is provided with a substrate and a dielectric layer which is formed on the substrate and has a corresponding second measurement mark, and the surfaces of the dielectric layer and the substrate are covered with the photoresist layer, wherein the first measurement mark on the photomask corresponds to the second measurement mark on the monitoring wafer one to one;
cleaning the surface of the monitoring wafer with the photoresist layer;
after cleaning is finished, determining an actual interface between the actually remaining photoresist layer on the monitoring sheet and the dielectric layer, and determining a distance between the actual interface and the center of the substrate according to a distance between the actual interface and the center of the substrate, which is represented by a second measurement mark exposed by the actual interface;
and determining the wafer surface cleaning precision according to the distance between the actual interface and the center of the substrate and the position of a corresponding target interface, wherein the target interface is the interface between the residual photoresist layer and the dielectric layer after expected cleaning.
13. The method for monitoring the cleaning precision of the surface of the wafer as claimed in claim 12, wherein the pattern of each second measurement mark and the distance between the center of the substrate represented by the second measurement mark have a one-to-one correspondence reading relationship.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110469605.5A CN112882340B (en) | 2021-04-29 | 2021-04-29 | Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110469605.5A CN112882340B (en) | 2021-04-29 | 2021-04-29 | Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112882340A true CN112882340A (en) | 2021-06-01 |
| CN112882340B CN112882340B (en) | 2021-07-09 |
Family
ID=76040196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110469605.5A Active CN112882340B (en) | 2021-04-29 | 2021-04-29 | Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112882340B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369571A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, wafer coarse alignment mark and coarse alignment method |
| CN101685271A (en) * | 2008-09-23 | 2010-03-31 | 和舰科技(苏州)有限公司 | Method for detecting wafer edge cleaning width of wafer |
| CN106556976A (en) * | 2016-11-30 | 2017-04-05 | 武汉新芯集成电路制造有限公司 | A kind of method and system based on measurement photoresistance film thickness monitoring photoresistance side washing precision |
| US20170170129A1 (en) * | 2014-09-26 | 2017-06-15 | Semiconductor Manufacturing International (Shanghai) Corporation | Photolithography alignment mark structures and semiconductor structures |
| CN108292103A (en) * | 2015-09-30 | 2018-07-17 | Asml荷兰有限公司 | Metering method, target and substrate |
| CN110568730A (en) * | 2019-09-03 | 2019-12-13 | 武汉新芯集成电路制造有限公司 | Semiconductor edge photoresist removing method |
-
2021
- 2021-04-29 CN CN202110469605.5A patent/CN112882340B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369571A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, wafer coarse alignment mark and coarse alignment method |
| CN101685271A (en) * | 2008-09-23 | 2010-03-31 | 和舰科技(苏州)有限公司 | Method for detecting wafer edge cleaning width of wafer |
| US20170170129A1 (en) * | 2014-09-26 | 2017-06-15 | Semiconductor Manufacturing International (Shanghai) Corporation | Photolithography alignment mark structures and semiconductor structures |
| CN108292103A (en) * | 2015-09-30 | 2018-07-17 | Asml荷兰有限公司 | Metering method, target and substrate |
| CN106556976A (en) * | 2016-11-30 | 2017-04-05 | 武汉新芯集成电路制造有限公司 | A kind of method and system based on measurement photoresistance film thickness monitoring photoresistance side washing precision |
| CN110568730A (en) * | 2019-09-03 | 2019-12-13 | 武汉新芯集成电路制造有限公司 | Semiconductor edge photoresist removing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112882340B (en) | 2021-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8007968B2 (en) | Substrate processing method, program, computer-readable storage medium and substrate processing system | |
| US20210296392A1 (en) | Flat Panel Array with the Alignment Marks in Active Area | |
| US20110051150A1 (en) | Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability | |
| CN103307983B (en) | The detection method of wafer edge exposure technique | |
| CN102156392A (en) | Device and method for detecting alignment parameter of photoetching machine | |
| CN111158217B (en) | Method and system for determining overlay deviation | |
| US20050110012A1 (en) | Overlay mark for measuring and correcting alignment errors | |
| CN106154741B (en) | Mask plate, defocus testing method and defocus testing system | |
| CN112114285A (en) | Wafer standard template containing multiple calibration types and manufacturing method thereof | |
| JPH0321901B2 (en) | ||
| US20050188342A1 (en) | Method of determining the overlay accuracy of multiple patterns formed on a semiconductor wafer | |
| CN115172362A (en) | Layout structure and layout method of layout structure | |
| US20060078808A1 (en) | Method for measuring overlay and overlay mark used therefor | |
| CN112882340B (en) | Photomask, monitoring wafer and method for monitoring wafer surface cleaning precision | |
| CN106017383A (en) | Contact-type step gauge probe detection pattern sample block | |
| CN112034677A (en) | Overlay mark, overlay mark method and overlay measuring method | |
| CN107831638B (en) | Method for detecting pollution of contact surface of mask and mask table | |
| CN216210467U (en) | Standard sheet and mask plate assembly | |
| CN102569113B (en) | Edging width detection method | |
| CN113515018B (en) | Alignment mark design method of 60-micrometer scribing groove | |
| CN107748479A (en) | It is a kind of to judge that baffle plate walks the mask plate and its method of precision | |
| JP2008205312A (en) | Exposure method | |
| CN115824036A (en) | Self-alignment precision measurement structure and method for measuring overlay deviation of same-layer exposure pattern | |
| US7186484B2 (en) | Method for determining the relative positional accuracy of two structure elements on a wafer | |
| JPH1197342A (en) | Positioning method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518 Shaoxing Road, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 518 Shaoxing Road, Zhejiang Province Patentee before: SMIC manufacturing (Shaoxing) Co.,Ltd. |