CN112882138A - Metal and dielectric composite high-temperature-resistant solar spectrum selective absorption structure - Google Patents
Metal and dielectric composite high-temperature-resistant solar spectrum selective absorption structure Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 103
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- 239000010937 tungsten Substances 0.000 claims description 21
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
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- 230000001154 acute effect Effects 0.000 claims description 3
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
- F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a high-temperature resistant solar spectrum selective absorption structure compounded by metal and dielectric medium, aiming at, achieves high absorptivity in a wide spectrum from visible light to near infrared light, realizes high-efficiency absorption of solar energy under high temperature, the metal nano-quadrangular star-shaped array structure comprises a bottom metal film, wherein a first dielectric film is formed on the bottom metal film, an array formed by a plurality of metal nano-quadrangular star-shaped prisms is formed on the first dielectric film, the center of each metal nano-quadrangular star-shaped prism is provided with a cylindrical hole, the cylindrical holes are filled with dielectric fillers, a second dielectric film is formed on the periphery of each metal nano quadrangular star prism, and a third dielectric film is formed on the metal nano quadrangular star prism, the dielectric filler and the second dielectric film, and the second dielectric film and the third dielectric film are in a quadrangular star shape.
Description
Technical Field
The invention relates to the technical field of solar energy utilization, in particular to a high-temperature-resistant solar spectrum selective absorption structure compounded by metal and dielectric.
Background
Solar energy is a clean and pollution-free renewable energy source, and the problems of environmental pollution and energy shortage can be solved by utilizing the solar energy. In order to utilize solar energy more efficiently, technologies such as photovoltaic power generation, photothermal power generation, thermophotovoltaic power generation, and the like have been proposed. In the above technologies, a solar selective absorption structure having a simple structure and durability is required to capture sunlight; meanwhile, the selective absorption structure in the photo-thermal power generation and the thermophotovoltaic power generation also needs to have the capability of bearing high temperature for a long time. After the surface plasmon resonance effect was first discovered in experiments in 1902 from Wood (philis. Mag.,1902,4(21):396-402.), it is a major concern in the academic and industrial fields to absorb light by means of the nano-structure capable of generating plasmon resonance. At present, the academic world and the industrial world mainly focus on the adoption of a metal and dielectric composite structure to generate a plurality of resonance modes such as local surface plasmon resonance, magnetic pole resonance, cavity resonance and the like so as to realize the absorption and capture of light.
In recent years, a large number of solar absorption structures based on gold, silver and other precious metal nanostructures have been proposed in the literature, including cylindrical arrays, square-cylindrical arrays, elliptical disk arrays, one-dimensional and two-dimensional gratings, and the like (Advanced Optical Materials,2019,7(3): 1800995.). However, existing solar energy absorbing structures suffer from a number of common drawbacks, such as: the absorption spectrum range is narrow and is limited to the visible light range; the traditional nano structure compounded by precious metals such as gold, silver and the like and dielectric is easy to diffuse and oxidize to lose efficacy in a high-temperature environment; the structure is too complex and the like. In view of the above, it is necessary to develop a solar spectrum selective absorption structure having high absorption rate in the visible to near infrared region and high thermal stability in a high temperature environment.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-temperature-resistant solar spectrum selective absorption structure compounded by metal and dielectric, which achieves high absorption rate in a wide spectrum from visible light to near infrared light and realizes high-efficiency absorption of solar energy under a high-temperature condition.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: the dielectric film structure comprises a bottom metal film, wherein a first dielectric film is formed on the bottom metal film, an array formed by a plurality of metal nano four-corner star prisms is formed on the first dielectric film, a cylindrical hole is formed in the center of each metal nano four-corner star prism, dielectric filler is filled in each cylindrical hole, a second dielectric film is formed on the periphery of each metal nano four-corner star prism, third dielectric films are formed on the metal nano four-corner star prisms, the dielectric filler and the second dielectric films, and the second dielectric films and the third dielectric films are in a four-corner star shape.
Further, the array is in a parallelogram lattice or a regular hexagon lattice.
Furthermore, each angle of the four-pointed star of the metal nano quadrangular star prism is an acute angle, and the metal nano quadrangular star prism is coincided with the metal nano quadrangular star prism after rotating around the central axis by 90 degrees, 180 degrees, 270 degrees or 360 degrees.
Further, the diameter of a circumscribed circle of a quadrangle star of the metal nano quadrangle star prism is 100nm to 1000 nm.
Further, the distance between the central axes of any two adjacent metal nano quadrangular star prisms is greater than or equal to the diameter of a circumscribed circle of a quadrangle star of the metal nano quadrangular star prism, and is less than or equal to 3000 nm.
Further, the diameter of the cylindrical hole is 20 nm-500 nm.
Further, the metal nanometer quadrangular star prism is made of tungsten, tantalum, hafnium, zirconium or chromium.
Further, the thickness of the bottom layer metal film is more than 200 nm; the bottom layer metal film is made of tungsten, tantalum, hafnium, zirconium or chromium.
Further, the materials of the first dielectric film, the dielectric filler, the second dielectric film and the third dielectric film are hafnium oxide or silicon dioxide.
Further, the thicknesses of the first dielectric thin film, the second dielectric thin film and the third dielectric thin film are all 5nm to 200 nm.
Compared with the prior art, the structure has the characteristics that different optical effects and resonance modes can be generated to strengthen the absorption of sunlight, the bottom metal film can reduce the transmission effect of the sunlight, the first dielectric film region can generate magnetic dipole resonance, the side surface of the metal nano four-corner star-shaped prism with the cylindrical hole in the center can generate local plasma resonance, the array formed by the metal nano four-corner star-shaped prisms can form a parallelogram or regular hexagon cavity region to generate cavity resonance of light waves, and the central cylindrical hole of the metal nano four-corner star-shaped prism can generate cavity resonance of the light waves. The structure of the present invention achieves an absorptivity of up to 0.971 for AM1.5 standard solar radiation, with the above-mentioned optical action and the synergistic enhancement of the resonance modes produced by the various features of the structure of the present invention.
The present invention employs a high melting point dielectric material, i.e., HfO2Or SiO2To form the dielectric filler, the first dielectric film, the second dielectric film and the third dielectric film, and to form the metal nano-quadrangular-star-shaped prism with the cylindrical hole in the center by using a high melting point metal material, i.e., tungsten, tantalum, hafnium, zirconium or chromium. Because the melting points of the materials exceed 1973K, and the dielectric filler, the first dielectric film, the second dielectric film and the third dielectric film can prevent the metal materials from diffusing and oxidizing at high temperature, the invention has good high-temperature resistance and can solve the problem that the traditional precious metal and dielectric composite nano structure of gold, silver and the like fails at high temperature.
The structure of the invention has the characteristics of diversified design and convenient and flexible performance adjustment; the selective absorption of solar spectrum can be realized by adopting different metal materials and dielectric materials, different high temperature resistant requirements can be met, and the spectrum selectivity can be regulated and controlled by changing the geometric parameters of the structure;
the invention has simple structure, good spectrum selectivity, high temperature resistance and easy manufacture, and can be widely used for solar energy absorption and capture in technologies such as photo-thermal power generation, thermo-photovoltaic power generation and the like.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the structure of a building block of the present invention;
FIG. 3 is a schematic cross-sectional view of a metallic nano-quadrangular prism, a dielectric filler, and a second dielectric film according to the present invention;
FIG. 4 is a schematic cross-sectional view of a third dielectric film of the present invention;
FIG. 5 is a schematic illustration of a parallelogram array of metal nanotetragonal star prisms of the present invention;
FIG. 6 is a schematic of a regular hexagonal array of metal nano-tetra-star prisms of the present invention;
FIG. 7 is an absorption spectrum curve and an AM1.5 standard solar radiation spectrum profile of example 1 of the present invention;
FIG. 8 is a graph comparing absorption spectra curves of example 1 of the present invention and comparative example 1;
FIG. 9 is a graph comparing absorption spectra curves of example 1 of the present invention and comparative example 2;
the light-emitting diode comprises a substrate, a metal film, a first dielectric film, a metal nano quadrangular prism, a 4-dielectric filler, a second dielectric film, a 6-third dielectric film, a 7-light, 8-array and a 9-structural unit, wherein the substrate comprises 1-a bottom metal film, 2-the first dielectric film, 3-the metal nano quadrangular prism, 5-the second dielectric film, 6-the third dielectric film, and 7-a light, 8-array.
Detailed Description
The present invention will be further explained with reference to the drawings and specific examples in the specification, and it should be understood that the examples described are only a part of the examples of the present application, and not all examples. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The invention provides a high-temperature-resistant solar spectrum selective absorption structure compounded by metal and dielectric, which comprises a bottom metal film 1, wherein a first dielectric film 2 is formed on the bottom metal film 1, an array 8 formed by a plurality of metal nano-quadrangular star prisms 3 is formed on the first dielectric film 2, a cylindrical hole is formed in the center of each metal nano-quadrangular star prism 3, a dielectric filler 4 is filled in the cylindrical hole, a second dielectric film 5 is formed on the periphery of each metal nano-quadrangular star prism 3, a third dielectric film 6 is formed on each metal nano-quadrangular star prism 3, the dielectric filler 4 and the second dielectric film 5, and the second dielectric film 5 and the third dielectric film 6 are in a quadrangular star shape. Each metal nano quadrangular star prism 3, the dielectric filler 4 filled in the cylindrical hole, the second dielectric film 5 formed on the periphery of each metal nano quadrangular star prism 3, and the third dielectric film 6 formed on the metal nano quadrangular star prism 3, the dielectric filler 4, and the second dielectric film 5 constitute one structural unit 9, that is, a plurality of structural units 9 constitute an array 8.
Referring to fig. 5 and 6, an array 8 formed by a plurality of metal nano quadrangular star prisms 3 is a parallelogram lattice or a regular hexagon lattice, wherein the metal nano quadrangular star prisms 3 can coincide with themselves after rotating around their central axes by 90 °, 180 °, 270 °, or 360 °; the cross section of each metal nano quadrangular star prism 3 is in the shape of a quadrangular star with a circular hole at the center, wherein the diameter of a circumscribed circle of the quadrangular star is within the range of 100 nm-1000 nm, each angle of the quadrangular star is an acute angle, and the diameter of the central circular hole is within the range of 20 nm-500 nm; the distance between the central axes of any two adjacent metal nano quadrangular star prisms 3 is not less than (i.e., not less than) the diameter of a circumscribed circle of a quadrangular star, and is not more than 3000nm, i.e., not more than 3000 nm; the material of the array of metal nano quadrangular star prisms 3 is tungsten, tantalum, hafnium, zirconium or chromium.
The thickness of the bottom layer metal film 1 is more than 200 nm; the material of the bottom layer metal film 1 is tungsten, tantalum, hafnium, zirconium or chromium.
The first dielectric film 2, the dielectric filler 4, the second dielectric film 5 and the third dielectric film 6 are made of hafnium oxide or silicon dioxide; the thicknesses of the first dielectric thin film 2, the second dielectric thin film 5, and the third dielectric thin film 6 are all 5nm to 200 nm.
When light 7 irradiates the structure, the bottom metal film 1 can reduce the transmission effect of sunlight, the area of the first dielectric film 2 can generate magnetic pole resonance, the side surface of the metal nano four-corner star prism 3 with a cylindrical hole in the center can generate local plasma resonance, the array 8 formed by the metal nano four-corner star prisms 3 can form a parallelogram or regular hexagon cavity area to generate cavity resonance of light waves, and the central cylindrical hole of the metal nano four-corner star prism 3 can generate cavity resonance of light waves, so that high absorption rate is achieved in a broad spectrum from visible light to near infrared light, and high-efficiency absorption of solar energy under a high temperature condition is achieved.
The present invention will be described with reference to specific examples.
Example 1:
the bottom layer metal film 1 is made of tungsten and has the thickness of 240 nm; the metal nanometer four-corner star prism 3 with the cylindrical hole at the center is arranged in a square (namely a special parallelogram) array, the distance between the central axes of two adjacent metal nanometer four-corner star prisms 3 corresponds to the side length of the square, and the value is 476 nm; the metal nanometer quadrangular star-shaped prism 3 is made of tungsten, the thickness of each metal nanometer quadrangular star-shaped prism 3 is 170nm, the cross section of each metal nanometer quadrangular star-shaped prism is a quadrangular star with a round hole in the center, the diameter of a circumscribed circle of the quadrangular star is 280nm, the diameter of the round hole in the center is 60nm, and the degree of each corner is 46.4 degrees; hafnium oxide was used as the material of the dielectric filler 4, the first dielectric thin film 2, the second dielectric thin film 5, and the third dielectric thin film 6, and the thicknesses thereof were 170nm, 40nm, 38.6nm, and 65nm, respectively. The absorption spectrum of the high-temperature resistant solar spectrum selective absorption structure compounded by metal and dielectric in the embodiment 1 is obtained by using maxwell electromagnetic field theory and finite element calculation method, and is shown in fig. 7.
As can be seen from FIG. 7, the spectral absorptance (. alpha.) of the structure of example 1 in the wavelength range of 280nm to 2304nmλ) Greater than 0.861. In particular, the structure of example 1 has a wavelength of 285-1440 nm and a width of 1155nmλUp to more than 95%; wherein when the wavelength is 500nm, the structure of the embodiment 1 has aλReaching its maximum value of 0.996. Meanwhile, when the wavelength is in the range of 2150nm to 4000nm, alpha is shownλRapidly decreasing from 0.978 to 0 with increasing wavelength.050. Further, the absorptivity (α) of the structure of this example 1 to the AM1.5 standard solar radiation was calculated by the following formulaAM1.5) Values as high as 0.971.
In the formula IAM1.5,λIs the spectral radiance, W.m, of AM1.5 standard solar radiation-2·nm-1。
Comparative example 1:
compared with the example 1, the difference is only that a common solid tungsten cylinder array is adopted to replace the tungsten nano four-corner star prism array with the cylindrical hole at the center in the example 1, and the volume of each solid tungsten cylinder is consistent with that of the tungsten nano four-corner star prism with the cylindrical hole at the center in the example 1, and the diameter of the corresponding solid tungsten cylinder is 281 nm.
The spectral absorptance (. alpha.) of the structure of comparative example 1 was obtained in the same manner as in example 1λ) And is compared with α of example 1λFor comparison, see FIG. 8. As can be seen from FIG. 8, α of example 1 is when the wavelength is less than 2229nmλAre all greater than or equal to alpha of comparative example 1λ(ii) a In particular, alpha of example 1 in the wavelength range of 1100nm to 2200nmλAlpha of comparative example 1λThe height is 0.065-0.377.
Comparative example 2:
compared with the embodiment 1, the difference is only that the common solid tungsten regular quadrangular prism array is adopted to replace the tungsten nano quadrangular star prism array with the cylindrical hole at the center in the embodiment 1, the volume of each solid tungsten regular quadrangular prism is consistent with that of the tungsten nano quadrangular star prism with the cylindrical hole at the center in the embodiment 1, and the corresponding solid tungsten regular quadrangular prism has the bottom surface side length of 260 nm.
The spectral absorptance (. alpha.) of the structure of comparative example 2 was obtained in the same manner as in example 1λ) And is compared with α of example 1λFor comparison, see FIG. 9. As can be seen from FIG. 9, α of example 1 is observed when the wavelength is less than 2366nmλAre all bigAlpha is equal to or higher than that of comparative example 2λ(ii) a In particular, alpha of example 1 in the wavelength range of 1100nm to 2200nmλAlpha of comparative example 2λThe height is 0.155-0.457.
And (3) comparative analysis:
comparative example 1 and comparative example 2 obtained according to the procedure of example 1, absorption (. alpha.) of AM1.5 standard solar radiationAM1.5) See table below. As can be seen from the following table, alpha for comparative examples 1 and 2AM1.5Respectively, of only 0.887 and 0.883, respectively, which are respectively higher than the alpha of example 1AM1.50.084 and 0.088 lower. It can be seen that, compared with comparative examples 1 and 2, example 1 can obtain higher absorptivity and can effectively enhance absorption and capture of solar energy.
| Examples and comparative examples | αAM1.5 |
| Example 1 | 0.971 |
| Comparative example 1 | 0.887 |
| Comparative example 2 | 0.883 |
Example 2:
the bottom layer metal film 1 is made of tungsten and has the thickness of 230 nm; the metal nanometer quadrangular star-shaped prisms 3 with the cylindrical holes in the centers are arranged in a regular hexagon array, the minimum distance between the central axes of two adjacent metal nanometer quadrangular star-shaped prisms 3 corresponds to the side length of a regular hexagon, and the value is 550 nm; metal nano quadrangular star prism 3 materialThe material is tungsten, the thickness of each metal nano quadrangular star prism 3 is 180nm, the cross section of each metal nano quadrangular star prism is a quadrangular star with a central circular hole, the diameter of a circumscribed circle of the quadrangular star is 300nm, the diameter of the central circular hole is 65nm, and the degree of each corner is 48 degrees; HfO is used as the material of the dielectric filler 4, the first dielectric thin film 2, the second dielectric thin film 5 and the third dielectric thin film 62The thicknesses of the materials are respectively 180nm, 50nm, 40nm and 65 nm.
Example 3:
the bottom layer metal film 1 is made of chromium and has the thickness of 200 nm; the metal nanometer quadrangular star-shaped prisms 3 with cylindrical holes in the centers are arranged in a rhombic (a special parallelogram) array, the minimum distance between the central axes of two adjacent metal nanometer quadrangular star-shaped prisms 3 corresponds to the side length of the rhombus, and the value is 530 nm; the two smaller angles of the diamond are both 80 ° and the two larger angles are both 100 °. The metal nanometer quadrangular star-shaped prism 3 is made of chromium, the thickness of each metal nanometer quadrangular star-shaped prism 3 is 185nm, the cross section of each metal nanometer quadrangular star-shaped prism is a quadrangular star with a round hole in the center, the diameter of a circumscribed circle of the quadrangular star is 290nm, the diameter of the round hole in the center is 50nm, and the degree of each corner is 45 degrees; SiO is used as the material of the dielectric filler 4, the first dielectric thin film 2, the second dielectric thin film 5 and the third dielectric thin film 62The thicknesses of the materials are 185nm, 45nm, 42nm and 62nm respectively.
The invention compounds the high melting point dielectric medium and the high melting point metal with high dielectric constant imaginary part into a special nano structure, thereby realizing the spectrum selective absorption of sunlight at high temperature; the structure geometric parameters and materials can be changed to regulate and control the spectrum selectivity; simple structure easily makes, can effectively promote solar energy capture performance in technologies such as light and heat electricity generation, hot photovoltaic.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A high-temperature resistant solar spectrum selective absorption structure compounded by metal and dielectric is characterized by comprising a bottom layer metal film (1), a first dielectric film (2) is formed on the bottom layer metal film (1), an array (8) formed by a plurality of metal nano quadrangular star prisms (3) is formed on the first dielectric film (2), the center of each metal nano quadrangular star prism (3) is provided with a cylindrical hole, dielectric fillers (4) are filled in the cylindrical holes, a second dielectric film (5) is formed on the periphery of each metal nano quadrangular star prism (3), a third dielectric film (6) is formed on the metal nano quadrangular star prism (3), the dielectric filler (4) and the second dielectric film (5), and the second dielectric film (5) and the third dielectric film (6) are in a shape of a quadrangle star.
2. The solar spectrum selective absorption structure with high temperature resistance compounded by metal and dielectric as claimed in claim 1, wherein the array (8) is in a parallelogram lattice or a regular hexagon lattice.
3. The solar spectrum selective absorption structure with high temperature resistance compounded by metal and dielectric as claimed in claim 2, characterized in that each angle of the four-pointed star of the metal nano-quadrangular star prism (3) is acute angle, and the metal nano-quadrangular star prism (3) is coincident with itself after rotating 90 °, 180 °, 270 ° or 360 ° around its central axis.
4. The high-temperature-resistant solar spectrum selective absorption structure compounded of metal and dielectric as claimed in claim 3, wherein the diameter of the circumscribed circle of the four-pointed star of the metal nano quadrangular star prism (3) is 100nm to 1000 nm.
5. The high-temperature-resistant solar spectrum selective absorption structure compounded of metal and dielectric as claimed in claim 4, wherein the distance between the central axes of any two adjacent metal nano-quadrangular-star-shaped prisms (3) is greater than or equal to the diameter of the circumscribed circle of the quadrangle star of the metal nano-quadrangular-star-shaped prisms (3) and less than or equal to 3000 nm.
6. The high-temperature-resistant solar spectrum selective absorption structure of claim 4, wherein the diameter of the cylindrical hole is 20nm to 500 nm.
7. The high-temperature-resistant solar spectrum selective absorption structure compounded by metal and dielectric as claimed in any one of claims 1 to 6, wherein the material of the metal nano quadrangular star prism (3) is tungsten, tantalum, hafnium, zirconium or chromium.
8. The high-temperature-resistant solar spectrum selective absorption structure compounded of metal and dielectric according to any one of claims 1 to 6, wherein the thickness of the bottom metal film (1) is more than 200 nm; the bottom layer metal film (1) is made of tungsten, tantalum, hafnium, zirconium or chromium.
9. The high-temperature-resistant solar spectrum selective absorption structure with metal and dielectric composite according to any one of claims 1 to 6, wherein the materials of the first dielectric film (2), the dielectric filler (4), the second dielectric film (5) and the third dielectric film (6) are hafnium dioxide or silicon dioxide.
10. The high-temperature-resistant solar spectrum selective absorption structure compounded by metal and dielectric as claimed in any one of claims 1 to 6, wherein the thickness of the first dielectric film (2), the second dielectric film (5) and the third dielectric film (6) is 5nm to 200 nm.
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