CN112877770A - Growth device and growth method for growing gallium oxide crystal by guided mode method - Google Patents
Growth device and growth method for growing gallium oxide crystal by guided mode method Download PDFInfo
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- CN112877770A CN112877770A CN202110141979.4A CN202110141979A CN112877770A CN 112877770 A CN112877770 A CN 112877770A CN 202110141979 A CN202110141979 A CN 202110141979A CN 112877770 A CN112877770 A CN 112877770A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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Abstract
The invention provides a growth device and a growth method for growing gallium oxide crystals by a guided mode method, wherein the growth device comprises: (1) the thermal field structure is used for preserving heat to form a thermal field, the thermal field structure is formed by laminating at least one heat preservation layer, the heat preservation layer is formed by splicing a plurality of sub heat preservation layers, and the plurality of blocks are natural numbers more than two; a through hole penetrating through the upper end surface and the lower end surface is formed in the center of the thermal field structure along the axial direction; (2) a sealing layer disposed about the periphery of the body. The thermal field structure adopts a mode of splicing a plurality of laminated snap buttons, effectively releases thermal stress at high temperature and avoids uncontrolled cracking; the invention also adopts the sealing layer made of transparent and high-temperature resistant material to seal the whole structure, and ensures the sealed low-gas convection environment required by the growth of the gallium oxide crystal, thereby effectively inhibiting the volatilization in the growth process of the gallium oxide crystal and realizing the continuous and stable preparation of the high-quality gallium oxide crystal.
Description
Technical Field
The invention relates to the technical field of artificial crystals, in particular to a growth device and a growth method for growing gallium oxide crystals by a guided mode method.
Background
β-Ga2O3(gallium oxide) is a direct band gap wide band gap semiconductor material, and the band gap is about 4.8-4.9 eV. It has large forbidden band width, fast saturated electron drift speed and high heatHigh conductivity, high breakdown field strength, stable chemical property and the like, and has wide application prospect in the field of high-temperature, high-frequency and high-power electronic devices. In addition, the sensor can also be used for LED chips, solar blind ultraviolet detection, various sensor elements, camera elements and the like.
At present, the large-size gallium oxide crystals are prepared in batches mainly by adopting a mold guiding preparation technology. The mold-guiding method is a mature single crystal preparation technology, and is particularly widely applied to the growth of sapphire single crystals and other high-temperature crystals. In contrast, gallium oxide growth is peculiar: during the growth process, gallium oxide undergoes the following decomposition reaction:
GaO、Ga2products such as O, Ga and the like are easy to volatilize and are attached to the surface of the crystal, so that the quality of the crystal is influenced; in addition, the method can cause serious corrosion to the noble metal iridium crucible and the die, and influence the subsequent growth stability. This decomposition phenomenon is more severe as the crucible volume and melt volume increase with increasing size of the growing crystal.
In the growth process of gallium oxide crystals, the design of a thermal field structure is very important for the growth of the crystals. However, the existing thermal field structure has a lot of problems: the large temperature gradient exists near the crucible, the low-thermal-conductivity material for heat preservation cracks after long-time use due to large internal and external temperature difference, and once the material is damaged or the process is adjusted, the replacement cost of the whole heat preservation layer is high, and the cost control is not facilitated. In addition, the heat-insulating layer is cracked to form an atmosphere convection channel, so that the chemical balance of decomposition and volatilization continuously shifts to the right, and the decomposition and volatilization of raw materials are intensified.
Accordingly, the prior art remains to be improved and developed.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a growth apparatus and a growth method for growing gallium oxide crystal by a guided mode method, which aim to solve the problems of uncontrolled cracking of thermal field structure and decomposition and volatilization of gallium oxide in the existing gallium oxide crystal growth process.
The technical scheme of the invention is as follows:
a growth apparatus for growing gallium oxide crystals by a guided mode method, comprising:
the thermal field structure is used for preserving heat to form a thermal field, the thermal field structure is formed by laminating at least one heat preservation layer, the heat preservation layer is formed by splicing a plurality of sub heat preservation layers, and the plurality of sub heat preservation layers are more than two natural numbers; a through hole penetrating through the upper end surface and the lower end surface is formed in the center of the thermal field structure along the axial direction;
and the sealing layer is arranged on the periphery of the body and used for forming a sealing environment for gallium oxide crystal growth.
Optionally, the sealing layer is a transparent sealing layer.
Optionally, the sealing layer is a quartz or glass sealing layer.
Optionally, the heat insulation layer is formed by splicing a plurality of sub heat insulation layers in a snap fastener mode.
Optionally, the heat-insulating layer is formed by splicing 2-8 sub heat-insulating layers.
Optionally, the heat-insulating layer is formed by splicing 2-4 sub heat-insulating layers in a snap fastener mode.
Optionally, the thermal field structure is formed by laminating 2-6 insulating layers.
Optionally, the thickness of the heat insulation layer is 20-100 mm.
Optionally, the upper end surface of the heat-insulating layer is provided with a step, the lower end surface of the heat-insulating layer is provided with a groove, and the adjacent two heat-insulating layers are stacked in a mode that the step is matched with the groove.
A method for growing a gallium oxide crystal, comprising the steps of: the growth device is adopted to grow the gallium oxide crystal to obtain the gallium oxide crystal.
Has the advantages that: the thermal field structure adopts a mode of splicing a plurality of laminated snap buttons, effectively releases thermal stress at high temperature and avoids uncontrolled cracking; in addition, the invention also adopts a sealing layer made of transparent and high-temperature resistant material to seal the whole structure, and ensures the sealed low-gas convection environment necessary for the growth of the gallium oxide crystal, thereby effectively inhibiting the volatilization problem in the growth process of the gallium oxide crystal, realizing the continuous and stable preparation of the high-quality gallium oxide crystal, and having simple and stable whole structure.
Drawings
FIG. 1 is a schematic structural diagram of a growing apparatus for growing gallium oxide crystal by a guided mode method according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of the thermal field structure in which the insulating layers are spliced by 2 sub-insulating layers.
Detailed Description
The present invention will now be described in more detail with reference to the accompanying schematic drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a thermal field structure 1 for growing gallium oxide crystals by a guided mode method, where the thermal field structure 1 is used for preserving heat to form a thermal field, the thermal field structure 1 is formed by stacking at least one insulating layer, the insulating layer is formed by splicing a plurality of sub insulating layers, and the plurality of sub insulating layers are natural numbers greater than two; the center of the thermal field structure 1 is provided with a through hole 2 penetrating through the upper end face and the lower end face along the axial direction.
In this embodiment, the thermal field structure is formed by stacking at least one insulating layer, and the thermal field structure is stacked in layers in height, so that thermal stress at high temperature can be effectively released, and the problem of uncontrolled cracking of the thermal field structure is solved. And the heat-insulating layer is formed by splicing a plurality of sub heat-insulating layers, and the heat stress at high temperature can be further released by adopting a splicing mode, so that uncontrolled cracking of a thermal field structure is effectively avoided, the thermal field stability of multi-furnace growth is improved, and the large-scale production of the gallium oxide crystal with high quality and low cost is realized.
In one embodiment, the heat-insulating layer is formed by splicing a plurality of sub heat-insulating layers in a snap fastener mode.
In one embodiment, the heat-insulating layer is formed by splicing 2-8 sub-heat-insulating layers, for example, 2, 3, 4, 5, 6, 7 or 8 sub-heat-insulating layers.
In one embodiment, the heat-insulating layer is formed by splicing 2-4 sub heat-insulating layers in a snap fastener mode. As shown in fig. 2, the heat insulation layer in fig. 2 is formed by splicing 2 sub-heat insulation layers in a snap-fastener manner, and only 1 sub-heat insulation layer is shown in fig. 2. By adopting the structure, the purpose of effectively releasing the thermal stress at high temperature can be achieved.
In one embodiment, the thermal field structure is formed by stacking 2-6 insulating layers, for example, 2, 3, 4, 5 or 6 layers.
In one embodiment, the insulating layer has a thickness of 20 to 100mm, for example, 20mm, 40mm, 60mm, 80mm or 100 mm. It should be noted that, the thickness of each insulating layer is 20-100 mm. Because the thickness is too large, the effect of releasing thermal stress is limited, and the crack is easy to occur; the thickness is too low, which affects the stability of the whole structure.
In one embodiment, the thermal field structure is formed by laminating 2-4 heat preservation layers, and the thickness of the heat preservation layer is 40-100 mm.
In one embodiment, the upper end surface of the heat-insulating layer is provided with a step, the lower end surface of the heat-insulating layer is provided with a groove, and the adjacent two heat-insulating layers are stacked in a mode that the step is matched with the groove. The adjacent heat-insulating layers can be firmly laminated together by adopting a mode that the steps are matched with the grooves.
That is to say, the upper end face of each heat preservation is provided with the step, and the lower terminal surface that the relative setting of upper end face was provided with the recess. Taking the three heat preservation layers as an example, the step arranged on the upper end face of the middle heat preservation layer is matched with the groove arranged on the lower end face of the upper heat preservation layer, the groove arranged on the lower end face of the middle heat preservation layer is matched with the step arranged on the upper end face of the lower heat preservation layer, and the effect of stable stacking of the three heat preservation layers is achieved.
In one embodiment, the insulating layer is a zirconia insulating layer, that is, the insulating layer is made of zirconia.
In this embodiment, as shown in fig. 1, a through hole 2 penetrating through the upper and lower end surfaces is formed in the center of the thermal field structure 1 along the axial direction, the through hole 2 is a seed rod inlet, and 3 in fig. 1 is a seed rod through hole. In order to facilitate the real-time observation of the growth condition of gallium oxide crystals, observation windows 4 are symmetrically arranged on two sides of the thermal insulation layer close to the crucible described below in the thermal field structure 1. The shape of the observation window 4 is not limited, and may be, for example, a square, a rectangle, or the like, and the center position thereof may be at an angle of 45 degrees with respect to the center of the top end of the mold described below to obtain an optimal observation angle.
In one embodiment, the cross-sectional shape of the through-hole 2 may be circular, square or tapered.
The embodiment of the invention provides a growth device for growing gallium oxide crystals by a guided mode method, which comprises a thermal field structure for growing the gallium oxide crystals by the guided mode method. For details of the thermal field structure, see above, further description is omitted here.
The embodiment of the invention provides a growth device for growing gallium oxide crystals by a guided mode method, which comprises the following steps:
the thermal field structure is used for preserving heat to form a thermal field, the thermal field structure is formed by laminating at least one heat preservation layer, the heat preservation layer is formed by splicing a plurality of sub heat preservation layers, and the plurality of sub heat preservation layers are more than two natural numbers; a through hole penetrating through the upper end surface and the lower end surface is formed in the center of the thermal field structure along the axial direction;
and the sealing layer is arranged on the periphery of the body and used for forming a sealing environment for gallium oxide crystal growth.
In this embodiment, the thermal field structure is formed by stacking at least one insulating layer, and the thermal field structure is stacked in layers in height, so that thermal stress at high temperature can be effectively released, and the problem of uncontrolled cracking of the thermal field structure is solved. And the heat-insulating layer is formed by splicing a plurality of sub heat-insulating layers, and the heat stress at high temperature can be further released by adopting a splicing mode, so that uncontrolled cracking of a thermal field structure is effectively avoided, the thermal field stability of multi-furnace growth is improved, and the large-scale production of the gallium oxide crystal with high quality and low cost is realized. Furthermore, although the thermal field structure has gaps, the sealing layer can form effective sealing, the whole convection-free environment is ensured, the chemical balance of the decomposition and volatilization of the gallium oxide is prevented from moving to the right, the decomposition and volatilization of the gallium oxide in the growth process of the gallium oxide are effectively inhibited, the high-quality gallium oxide crystal is produced, and the whole structure is simple and stable. Therefore, the embodiment not only improves the thermal field stability of multi-furnace growth, but also effectively inhibits the decomposition and volatilization of the gallium oxide crystal, and realizes the large-scale production of the gallium oxide crystal with high quality and low cost.
In one embodiment, the sealing layer is a transparent sealing layer, so that growth of gallium oxide crystals in the bulk can be observed. Further, the sealing layer may be a quartz or glass sealing layer. The material sealing layer is transparent and high-temperature resistant, can form effective sealing, ensures the whole convection-free environment, prevents the chemical balance of the decomposition and volatilization of the gallium oxide from moving to the right, thereby effectively inhibiting the decomposition and volatilization of the gallium oxide, realizing the production of high-quality gallium oxide crystals and having simple and stable integral structure.
The specific structure of the growth apparatus for growing gallium oxide crystal by the guided mode method is described below with reference to fig. 1, which mainly describes the specific structure of the body. For convenience of introduction, the body is divided into two parts: the first body is positioned above the second body. Correspondingly, the sealing layers comprise a first sealing layer 5 and a second sealing layer 7, the first sealing layer 5 is arranged on the periphery of the first body, and the second sealing layer 7 is arranged on the periphery of the second body. Further, the first sealing layer 5 is a transparent sealing layer, so that the growth of gallium oxide crystals in the bulk can be observed. Further, the first sealing layer 5 may be a quartz or glass sealing layer. The material sealing layer is transparent and high temperature resistant, and can form effective sealing. Of course, the second sealing layer 7 may also be a transparent sealing layer. Further, the second sealing layer 7 may be a quartz or glass sealing layer.
In one embodiment, the first body includes the thermal field structure 1, and details regarding the thermal field structure are as described above and will not be repeated herein. That is, the first sealing layer 5 is coaxially disposed at the periphery of the thermal field structure 1, and the first sealing layer 5 and the thermal field structure 1 have the same height.
In one embodiment, the growth apparatus further comprises a sealing lid 6 covering the top of the first sealing layer 5 and the thermal field structure 1. After the thermal field structure 1, the first sealing layer 5 and the sealing cover 6 are assembled, only a small hole is formed in the sealing cover 6 at the top to form a gas exchange channel with the inner area, and the size of the gas exchange channel is just used for seed rods to pass through.
In one embodiment, the second body comprises a heat insulation structure 8, a heating body 9 and a crucible 10 which are coaxially arranged from outside to inside, and further comprises a mold 11 embedded in the crucible 10.
Wherein, the crucible 10 is used for loading gallium oxide raw material, and the crucible 10 is covered with a crucible cover 12 to prevent the volatilization of the gallium oxide raw material. The crucible 10 is an iridium crucible or an iridium-containing alloy crucible, the crucible cover 12 is an iridium crucible cover or an iridium-containing alloy crucible cover, a through hole with the same size as the cross section of the mold 11 is formed in the crucible cover 12, and the mold 11 extends into the through hole of the crucible cover 12 and is embedded in the center of the crucible 10 along the axial direction. The cross-section of the mould 11 is the same shape as the cross-section of the crystal to be grown so that the feedstock can be transported by capillary suction to the top of the mould 11 and spread out at the top until fully covered, thereby growing the desired shape. Wherein the die 11 is an iridium die or an iridium-containing alloy die.
The upper end of the heating body 9 is provided with a reflection cover 14, the outer diameter of the reflection cover 14 is the same as that of the heating body 9, a reflection cover through hole 15 is formed in the center of the reflection cover 14, and the reflection cover through hole 15 is used for inserting a seed rod. Wherein, the heating element 9 is an iridium heating element or an iridium-containing alloy heating element. Wherein, the reflective cover 14 is an iridium reflective cover or an iridium-containing alloy reflective cover.
Wherein, insulation construction 8 is formed by the combination of side insulating brick and bottom heated board. Further, the insulating brick can be a zirconia insulating brick, and the insulating board can be a zirconia insulating board.
In one embodiment, the second body further comprises: the insulation structure comprises an insulation material filling layer 16 arranged on the inner end face of the insulation structure 8 and an insulation board 17 (a zirconia insulation board) covering the insulation material filling layer 16. The heating element 9 and the crucible 10 are mounted on the heat-insulating plate 17. That is, the crucible 10, the heating element 9, the heat insulating material filling layer 16 and the heat insulating plate 17 are all mounted on the inner end surface of the heat insulating structure 8. Wherein, the heat preservation material can be zirconia sand or high temperature resistant cotton, such as quartz fiber cotton.
In one embodiment, the second body further comprises: and the heat-insulating material filling layer 16 is arranged between the second sealing layer 7 and the side heat-insulating bricks 8. Wherein, the heat preservation material can be zirconia sand or high temperature resistant cotton, such as quartz fiber cotton.
In this embodiment, the first body and the second body are butted together, and the first body and the second body are coaxially arranged in the center, and the whole body may have a cylindrical structure. When the whole body is of a cylindrical structure, the first sealing layer, the second sealing layer, the heat preservation structure, the heating body and the crucible with the cover are all of cylindrical structures. Of course, the present embodiment is not limited to the cylindrical structure, and other shapes and structures are also possible.
The embodiment of the invention provides a growth method of gallium oxide crystals, which comprises the following steps: by adopting the growth device provided by the embodiment of the invention, the gallium oxide crystal is grown to obtain the gallium oxide crystal. In the growth device of the embodiment, on one hand, a thermal field structure adopts a mode of layering a plurality of snap buttons and splicing a plurality of snap buttons, so that the thermal stress at high temperature is effectively released, and uncontrolled cracking is avoided; on the other hand, the whole structure is sealed by adopting a sealing layer made of transparent and high-temperature-resistant materials, so that a sealed low-gas convection environment necessary for the growth of the gallium oxide crystal is ensured, the volatilization problem in the growth process of the gallium oxide crystal can be effectively inhibited, the continuous and stable preparation of the high-quality gallium oxide crystal is realized, and the whole structure is simple and stable.
The growth process of gallium oxide crystals is described below.
To orient the beta-Ga in a specific orientation2O3The seed crystal is placed in a seed crystal holder and fixed, and the orientation of the seed crystal in the vertical direction may be [010 ]]The direction and the major surface direction parallel to the mold width direction are (100), (-201), (001), and the like;
after a growth device for crystal growth is installed, crystal growth is performed;
firstly, a mechanical pump and a diffusion pump are started in sequence to vacuumize a furnace chamber. When the vacuum degree is pumped to<10-2When pa, the vacuum equipment is closed, and the mixed gas is slowly inflated according to the volume ratio until the pressure of the furnace chamber is +0.01 Mpa;
then heating to a temperature slightly higher than the melting point of gallium oxide, completely melting the gallium oxide raw material, conveying the gallium oxide raw material to the top of the mold through capillary siphon action, and spreading the gallium oxide raw material on the top until the gallium oxide raw material is completely covered;
then, slowly lowering the seed rod to enable the seed to be 3-5mm away from the top of the die for seed baking, and starting inoculation after 5-10 minutes;
after the seed crystal and the melt are fully welded, seeding and necking are carried out, so that the original defects of the seed crystal are prevented from extending into the crystal, and the quality of the crystal is ensured;
then, carrying out shoulder expanding growth to ensure that the crystal is transversely expanded to the whole mould;
then carrying out equal-diameter growth;
after the crystal growth is finished, slowly cooling to room temperature, and taking out the crystal to obtain the gallium oxide crystal.
The invention is further illustrated by the following specific examples.
Example 1
The thermal field structure for growing the gallium oxide single crystal with the width of 55mm and the thickness of 6mm is formed by stacking 2 heat-insulating layers in the height direction, the total outer diameter of the thermal field structure is 140mm, each heat-insulating layer is formed by splicing 2 sub heat-insulating layers in a snap fastener mode, and the thickness of each heat-insulating layer is 80 mm. Two observation windows with a diameter of 25mm are opened from the side. After the thermal field structure is used, no obvious crack is generated.
Comparative example 1
The whole thermal field structure is generally consistent in appearance, but one layer of the whole thermal field structure is formed integrally, so that transverse and longitudinal severe cracking occurs after the thermal field structure is used once, the thermal field structure cannot be used continuously, and the whole thermal field structure is scrapped integrally.
Comparative example 2
The thermal field structure has two layers in height, but each layer of heat preservation does not divide into 2, uses 2 times after, and the upper strata is intact, and the lower floor is irregular fracture near the viewing aperture, and the part is scrapped.
Example 2
The growth device with the structure shown in fig. 1 is adopted to grow gallium oxide single crystals, after the gallium oxide single crystals grow for 20 times, no obvious volatilization condition exists in the furnace, the total loss mass of raw materials in the actual measurement growth process is always less than 3%, and the crystal growth process is stable.
Comparative example 3
The gallium oxide single crystal is grown by adopting the traditional quartz sealing layer without the outer layer, and the sapphire sheet is adopted as local sealing at an observation window, so that the condition of primary growth is good. After the growth is carried out for 5 times, the heat-insulating layer cracks to form serious convection, the phenomenon of visible volatilization of raw materials by naked eyes is serious in the process of heating and melting, and the crystal growth is seriously disturbed and can not be carried out.
In summary, the present invention provides a growth apparatus and a growth method for growing gallium oxide crystal by the guided mode method. The thermal field structure adopts a mode of splicing a plurality of laminated snap buttons, effectively releases thermal stress at high temperature and avoids uncontrolled cracking; on the other hand, the invention also adopts the sealing layer made of transparent and high-temperature resistant material to seal the whole structure, and ensures the sealed low-gas convection environment necessary for the growth of the gallium oxide crystal, thereby effectively inhibiting the volatilization problem in the growth process of the gallium oxide crystal, realizing the continuous and stable preparation of the high-quality gallium oxide crystal, and having simple and stable whole structure.
Claims (10)
1. A growth apparatus for growing gallium oxide crystals by a guided mode method, comprising:
the thermal field structure is used for preserving heat to form a thermal field, the thermal field structure is formed by laminating at least one heat preservation layer, the heat preservation layer is formed by splicing a plurality of sub heat preservation layers, and the plurality of sub heat preservation layers are more than two natural numbers; a through hole penetrating through the upper end surface and the lower end surface is formed in the center of the thermal field structure along the axial direction;
and the sealing layer is arranged on the periphery of the body and used for forming a sealing environment for gallium oxide crystal growth.
2. The growth apparatus for growing gallium oxide crystal according to claim 1, wherein the sealing layer is a transparent sealing layer.
3. The growth device for growing gallium oxide crystals according to claim 2, wherein the sealing layer is made of quartz or glass.
4. The growth device for growing gallium oxide crystals by the guided mode method according to claim 1, wherein the heat-insulating layer is formed by splicing a plurality of sub-heat-insulating layers in a snap-fit manner.
5. The growth device for growing the gallium oxide crystal by the guided mode method according to claim 1, wherein the heat-insulating layer is formed by splicing 2-8 heat-insulating sub-layers.
6. The growth device for growing gallium oxide crystals by the guided mode method according to claim 1, wherein the heat insulation layer is formed by splicing 2-4 sub heat insulation layers in a snap fastener mode.
7. The growth device for growing the gallium oxide crystal by the guided mode method according to claim 1, wherein the thermal field structure is formed by laminating 2-6 insulating layers.
8. The growth device for growing gallium oxide crystals by the guided mode method according to claim 1, wherein the thickness of the heat-insulating layer is 20-100 mm.
9. The growing device for growing gallium oxide crystals by the guided mode method according to claim 1, wherein the upper end surface of the heat-insulating layer is provided with steps, the lower end surface of the heat-insulating layer is provided with grooves, and two adjacent heat-insulating layers are stacked in a way that the steps are matched with the grooves.
10. A method for growing a gallium oxide crystal, comprising the steps of: growing a gallium oxide crystal by using the growing apparatus of any one of claims 1 to 9 to obtain a gallium oxide crystal.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113913924A (en) * | 2021-09-08 | 2022-01-11 | 杭州富加镓业科技有限公司 | Gallium oxide single crystal growth device |
| CN113957518A (en) * | 2021-09-08 | 2022-01-21 | 杭州富加镓业科技有限公司 | Gallium oxide crystal growth method based on guided mode growth device |
| CN113957529A (en) * | 2021-09-08 | 2022-01-21 | 杭州富加镓业科技有限公司 | Gallium oxide crystal growth method based on guided mode growth device |
| CN115874268A (en) * | 2022-12-15 | 2023-03-31 | 中国科学院上海光学精密机械研究所 | Thermal field structure for inhibiting gallium oxide volatilization |
-
2021
- 2021-02-02 CN CN202110141979.4A patent/CN112877770A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113913924A (en) * | 2021-09-08 | 2022-01-11 | 杭州富加镓业科技有限公司 | Gallium oxide single crystal growth device |
| CN113957518A (en) * | 2021-09-08 | 2022-01-21 | 杭州富加镓业科技有限公司 | Gallium oxide crystal growth method based on guided mode growth device |
| CN113957529A (en) * | 2021-09-08 | 2022-01-21 | 杭州富加镓业科技有限公司 | Gallium oxide crystal growth method based on guided mode growth device |
| CN115874268A (en) * | 2022-12-15 | 2023-03-31 | 中国科学院上海光学精密机械研究所 | Thermal field structure for inhibiting gallium oxide volatilization |
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