CN112877629A - Processing method for improving microstructure uniformity of tantalum plate for thick target - Google Patents
Processing method for improving microstructure uniformity of tantalum plate for thick target Download PDFInfo
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- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 147
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 145
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 238000005096 rolling process Methods 0.000 claims abstract description 57
- 238000000137 annealing Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000013077 target material Substances 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000010894 electron beam technology Methods 0.000 claims abstract description 6
- 238000005242 forging Methods 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000004321 preservation Methods 0.000 claims abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000010791 quenching Methods 0.000 claims description 5
- 230000000171 quenching effect Effects 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000001953 recrystallisation Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 238000005097 cold rolling Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000003481 tantalum Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
The invention discloses a processing method for improving the microstructure uniformity of a tantalum plate for a thick target material, which comprises the steps of firstly forging and cogging a tantalum ingot prepared by an electron beam melting method to break coarse columnar crystal structures in the initial tantalum ingot, and obtaining a tantalum plate blank for subsequent rolling through slicing and primary annealing heat treatment procedures; then placing the tantalum plate blank in a high-temperature furnace for heat preservation, and then synchronously rolling, wherein each pass rotates for 135 degrees; and finally, placing the rolled tantalum plate blank in a tube furnace for secondary annealing to obtain a completely recrystallized structure, thereby obtaining the tantalum plate target material. The method has the obvious effects that the average size of the finished product is smaller after the product is completely recrystallized and annealed, the average size difference of crystal grains with different orientations is smaller, the texture content difference is smaller, and the content of the crystal grains with random orientations is higher; and the total deformation of the tantalum plate target material is smaller, and a thicker tantalum target can be produced.
Description
Technical Field
The invention relates to a processing method of a tantalum plate, in particular to a rolling recrystallization method of the tantalum plate for a target material.
Background
In the semiconductor integrated circuit industry, in order to ensure the quality of sputtered films, the average grain size of tantalum target materials is required to be less than 100 μm, the grains are equiaxed and the texture is randomly distributed. In order to improve the utilization of tantalum sputtering targets, it is desirable to achieve tantalum sputtering targets with thicknesses up to or exceeding 10mm in industrial applications. However, the thicker the sputtering target, the more difficult it is to effectively control the texture and microstructure uniformity, and it is noted that the increased thickness of the tantalum plate target helps to increase the utilization rate of the target material and improve the working efficiency of the sputtering machine (thin targets need to be stopped and replaced more frequently).
The tantalum plate is easy to have texture gradient and orientation-related deformation microstructure nonuniformity in the rolling process. Orientation-dependent non-uniform splitting tends to cause differences in stored energy within grains of different orientations, which is detrimental to subsequent uniform recrystallized microstructure. Although this structural inhomogeneity can be improved by an intermediate cycle annealing process or severe plastic deformation means such as equal channel angular extrusion, high pressure torsion, etc., it greatly increases the difficulty and energy consumption of industrial production. Furthermore, the severe deformation process is currently limited by the size of the sample being processed and is not mature for industrial use. Therefore, it is important to improve the existing processing techniques, especially rolling techniques, and annealing regimes to uniform the deformation and recrystallization texture and texture of tantalum sheets.
Tantalum is a high-energy-level metal, and dislocations are prone to climb and cross-slip, so most of the stored energy is released in the recovery stage, even up to 70%. Therefore, the recovery has a large influence on the recrystallization behavior of the high-stacking fault energy metal. The DSC curve for the precursor tantalum showed a recovery temperature of about 800 c for tantalum. At present, the influence of the warm rolling process on the microstructure uniformity of the tantalum is not concerned.
The applicant has prior chinese patent applications with application numbers: CN201010599296.5 discloses a processing technique of a high-purity tantalum sputtering target, which is to perform shaping processing on a tantalum plate by using a 135 ° circumferential cold rolling manner, but has a limited effect on reducing the grain size of the tantalum plate and the uniform texture content, and a deformation amount of more than 80% is required to obtain a more uniform texture. In order to further reduce the grain size of the tantalum plate target material and improve the uniformity of various texture contents, researchers thought that the combination of the above method and the mode of heating the tantalum plate to the temperature above the recovery temperature would be expected to obtain the expected effect, but the actual situation is not expected.
Disclosure of Invention
In view of the above, the present invention provides a method for improving the deformation and the non-uniformity of the recrystallized microstructure of a tantalum plate by combining circumferential rolling and warm rolling.
The technical scheme is as follows:
a processing method for improving the microstructure uniformity of a tantalum plate for a thick target material is characterized by comprising the following steps:
step one, forging and cogging tantalum ingots prepared by an electron beam melting method to break coarse columnar crystal structures in initial tantalum ingots, and then carrying out slicing and primary annealing heat treatment procedures to obtain tantalum plate blanks for subsequent rolling;
secondly, placing the tantalum plate blank in a high-temperature furnace for heat preservation for 30min, then synchronously rolling the tantalum plate blank in the horizontal direction, after each rolling pass, rotating the tantalum plate blank in the horizontal plane counterclockwise by 135 degrees relative to the feeding direction of the tantalum plate blank, and then rolling the tantalum plate blank in the next pass;
after eight passes of rolling, returning the tantalum plate blank to the furnace and preserving the heat for 10min, and continuing to roll for four passes, finally keeping the total rolling quantity of the tantalum plate blank to be 70%;
and thirdly, placing the rolled tantalum plate blank in a 1100 ℃ tube furnace for secondary annealing to obtain a completely recrystallized structure, introducing argon gas as a protective gas in the secondary annealing process, and performing rapid water quenching treatment on the sample after the annealing is finished to obtain the tantalum plate target.
Drawings
FIG. 1 is a microstructure diagram of a tantalum plate blank after being subjected to unidirectional 800 ℃ rolling in example 1;
FIG. 2 is a microstructure diagram of a tantalum plate blank after circumferential room temperature cold rolling in example 3;
FIG. 3 is a microstructure diagram of a tantalum plate blank rolled at 500 ℃ in the circumferential direction in example 5;
FIG. 4 is a microstructure diagram of a tantalum plate blank rolled at 800 ℃ in the circumferential direction in example 7;
FIG. 5a is a diagram of a recrystallized microstructure of a tantalum plate target A1;
FIG. 5b is a diagram of the recrystallized microstructure of tantalum plate target A2;
FIG. 6a is a diagram of the recrystallized microstructure of tantalum plate target B1;
FIG. 6B is a diagram of the recrystallized microstructure of tantalum plate target B2;
FIG. 7a is a diagram of the recrystallized microstructure of tantalum plate target C1;
FIG. 7b is a view of the recrystallized microstructure of tantalum plate target C2;
FIG. 8a is a diagram of the recrystallized microstructure of tantalum plate target D1;
FIG. 8b is a view of the recrystallized microstructure of tantalum plate target D2;
FIG. 9 is a graph of the recrystallized grain size distribution of tantalum plate targets A1, B2, C1, and D1;
fig. 10 is a graph of volume fractions of differently oriented grains of tantalum plate targets a1, B2, C1, and D1.
Detailed Description
The present invention will be further described with reference to the following examples and the accompanying drawings.
Example 1:
a processing method for improving the microstructure uniformity of a tantalum plate for a thick target material comprises the following steps:
step one, forging and cogging tantalum ingots prepared by an electron beam melting method to break coarse columnar crystal structures in initial tantalum ingots, slicing, and finally performing primary annealing for 3 hours at 1050 ℃ in a vacuum furnace to obtain tantalum plate blanks for subsequent rolling;
secondly, placing the tantalum plate blank in a high-temperature furnace, setting and maintaining the temperature in the high-temperature furnace at 800 ℃, preserving the heat of the tantalum plate blank for 30min, then synchronously rolling the tantalum plate blank in the horizontal direction, returning the tantalum plate blank to the furnace and preserving the heat for 10min after eight passes of rolling, continuing to roll for four passes, and finally keeping the total rolling quantity of the tantalum plate blank at 70%; in the rolling process, the tantalum plate is kept to enter the roller in the same feeding direction in each pass, and the tantalum plate is not rotated;
and step three, placing the rolled tantalum plate blank in a 1100 ℃ tube furnace for 30min for re-annealing to obtain a completely recrystallized structure, introducing argon gas as a protective gas in the re-annealing process, and performing rapid water quenching treatment on the sample after the annealing is finished to obtain the tantalum plate target material A1.
Example 2:
this embodiment differs from embodiment 1 only in that: in the third step, the tantalum plate blank is placed in a tube furnace for 60min for re-annealing; obtaining the target material A2 of tantalum plate.
Example 3:
a processing method for improving the microstructure uniformity of a tantalum plate for a thick target material comprises the following steps:
step one, forging and cogging tantalum ingots prepared by an electron beam melting method to break coarse columnar crystal structures in initial tantalum ingots, slicing, and finally performing primary annealing for 3 hours at 1050 ℃ in a vacuum furnace to obtain tantalum plate blanks for subsequent rolling;
step two, firstly, the tantalum plate blank is kept for 30min at room temperature (20 ℃), then is synchronously rolled in the horizontal direction, and after each rolling pass, the tantalum plate blank is rotated anticlockwise by 135 degrees in the horizontal plane relative to the feeding direction of the tantalum plate blank, and then is rolled in the next pass;
after eight passes of rolling, returning the tantalum plate blank to the furnace and preserving the heat for 10min, and continuing to roll for four passes, finally keeping the total rolling quantity of the tantalum plate blank to be 70%;
and step three, placing the rolled tantalum plate blank in a 1100 ℃ tube furnace for 30min for re-annealing to obtain a completely recrystallized structure, introducing argon gas as a protective gas in the re-annealing process, and performing rapid water quenching treatment on the sample after the annealing is finished to obtain the tantalum plate target material B1.
Example 4:
this embodiment differs from embodiment 3 only in that: and in the third step, the tantalum plate blank is placed in a tube furnace for 60min for re-annealing to obtain the tantalum plate target material B2.
Example 5:
a processing method for improving the microstructure uniformity of a tantalum plate for a thick target material comprises the following steps:
step one, forging and cogging tantalum ingots prepared by an electron beam melting method to break coarse columnar crystal structures in initial tantalum ingots, slicing, and finally performing primary annealing for 3 hours at 1050 ℃ in a vacuum furnace to obtain tantalum plate blanks for subsequent rolling;
secondly, placing the tantalum plate blank in a high-temperature furnace, setting and maintaining the temperature in the high-temperature furnace at 500 ℃, preserving the temperature of the tantalum plate blank for 30min, then synchronously rolling the tantalum plate blank in the horizontal direction, after each rolling pass, rotating the tantalum plate blank in the horizontal plane counterclockwise by 135 degrees relative to the feeding direction of the tantalum plate blank, and then rolling the tantalum plate blank in the next pass;
after eight passes of rolling, returning the tantalum plate blank to the furnace and preserving the heat for 10min, and continuing to roll for four passes, finally keeping the total rolling quantity of the tantalum plate blank to be 70%;
and step three, placing the rolled tantalum plate blank in a 1100 ℃ tube furnace for 30min for re-annealing to obtain a completely recrystallized structure, introducing argon gas as a protective gas in the re-annealing process, and performing rapid water quenching treatment on the sample after the annealing is finished to obtain the tantalum plate target material C1.
Example 6:
this embodiment differs from embodiment 5 only in that: in the third step, the tantalum plate blank is placed in a tube furnace for 60min for re-annealing; obtaining the tantalum plate target C2.
Example 7:
this embodiment differs from embodiment 5 only in that: in the second step, setting and maintaining the temperature in the high-temperature furnace to be 800 ℃; obtaining the tantalum plate target material D1.
Example 8:
this embodiment differs from embodiment 5 only in that: in the second step, setting and maintaining the temperature in the high-temperature furnace to be 800 ℃; in the third step, the tantalum plate blank is placed in a tube furnace for 60min for re-annealing; obtaining the tantalum plate target material D2.
Firstly, observing the tantalum plate blanks obtained by the second step of the examples 1, 3, 5 and 7 respectively, wherein the corresponding deformation microstructure diagrams are respectively shown in figures 1, 2, 3 and 4;
as can be seen from fig. 1: the deformed microstructure of the tantalum plate blank adopting the unidirectional 800 ℃ warm rolling process (example 1) mainly consists of {111} oriented grains (namely blue grains), while {100} oriented grains (namely red grains) are fewer, and the rolling texture is not uniform; as can be seen from fig. 2, 3, 4: the uniformity of the rolling texture of the tantalum plate blank can be obviously improved by adopting the 135-degree circumferential rolling process (examples 3, 5 and 7), namely the {111} and {100} oriented crystal grains are alternately distributed.
Meanwhile, comparing fig. 2, 3 and 4, it can be found that: the deformation of the tantalum plate blank adopting the 135-degree circumferential cold rolling (20 ℃) process (example 3) is organized into block distribution, the deformation crystal grains are coarser, and the time required for the complete recrystallization annealing of the sample is longer; on the contrary, the grains of the deformed microstructure of the tantalum plate blank subjected to the circumferential 500 ℃ warm rolling process (example 5) and the circumferential 800 ℃ warm rolling process (example 7) are slender and distributed in a strip shape, and the time required for obtaining a complete recrystallization structure is short. It can be seen that the adoption of 135 deg. circumferential warm rolling (examples 5 and 7) improves the uniformity of {111} and {100} deformed grains, and also refines the deformed grains, and is also beneficial to shortening the annealing time.
Second, tantalum plate targets a1, a2, B1, B2, C1, C2, D1, and D2 were observed, and their corresponding recrystallization microstructures are shown in fig. 5a, 5B, 6a, 6B, 7a, 7B, 8a, and 8B, respectively.
Counting the grain sizes of the orientations of 111, 100 and 110 in the figures 5a, 6b, 7a and 8a respectively, and drawing a recrystallized grain size distribution diagram (figure 9) and a volume fraction diagram (figure 10) of grains with different orientations of the corresponding tantalum plate target after the full annealing; in FIGS. 9 and 10, the abscissa UR-800 ℃ represents the unidirectional 800 ℃ warm-rolling process according to example 1, CR-20 ℃ represents the circumferential room temperature (20 ℃) warm-rolling process according to example 4, CR-500 ℃ represents the circumferential 500 ℃ warm-rolling process according to example 5, and CR-800 ℃ represents the circumferential 800 ℃ warm-rolling process according to example 7.
As can be seen in connection with fig. 5a, 5b, 6a, 6b, 7a, 7b, 8a, 8b, 9: the average grain sizes of the tantalum plate target materials A1 and A2 after the full recrystallization annealing by adopting the unidirectional 800 ℃ warm rolling process (examples 1 and 2) are the largest, and the average grain sizes of grains with different orientations are greatly different, and the average grain sizes are mainly represented as that of grains with the {111} orientation are the largest, and that of grains with the {100} orientation is the smallest.
The average grain size of the tantalum plate targets B1 and B2 after complete recrystallization annealing by using 135-degree circumferential cold rolling process (examples 3 and 4) is smaller than that of the tantalum plate targets A1 and A2, but the difference between the average grain sizes of different oriented grains is still large.
Compared with tantalum plate targets A1 and A2 adopting a unidirectional 800 ℃ warm rolling process (examples 1 and 2) and tantalum plate targets B1 and B2 adopting 135 ℃ circumferential cold rolling (examples 3 and 4); the average sizes of the tantalum plate targets C1 and C2 adopting the 135-degree circumferential 500-degree warm rolling process (examples 5 and 6) and the tantalum plate targets D1 and D2 adopting the 135-degree circumferential 800-degree warm rolling process (examples 7 and 8) after complete recrystallization annealing are smaller, and the average size difference of grains with different orientations is smaller.
The average size of the tantalum plate targets C1 and C2 after complete recrystallization annealing by adopting a 135-degree circumferential 500-DEG warm rolling process (examples 5 and 6) is the smallest, and the average size difference of grains with different orientations is also the smallest. Between examples 5 and 6, it can further be seen that the average grain size of the tantalum plate target C1 re-annealed for 30min was finer than that of the tantalum plate target C2, and the average size difference of the differently oriented grains was smaller.
As can be seen in conjunction with fig. 10: the content difference of the {111}, {100} and {110} recrystallization textures of the tantalum plate target A1 adopting the unidirectional 800 ℃ warm rolling process (example 1) and the tantalum plate target B2 adopting the 135 ℃ circumferential cold rolling process (example 4) after the complete recrystallization annealing is large, and the main expression is that the {111} recrystallization texture is taken as the main texture. The tantalum plate target C1 adopting the 135-degree circumferential 500-degree warm rolling process (example 5) and the tantalum plate target D1 adopting the 135-degree circumferential 800-degree warm rolling process (example 7) have smaller content difference of different recrystallization textures after complete recrystallization annealing, and the random grain content is higher.
In conclusion, the invention has the beneficial effects that: the tantalum plate is rolled by adopting warm rolling processes of circumferential 500 ℃ and 800 ℃ at 135 degrees, the average size of the finished product is smaller after complete recrystallization annealing, the average size difference of different oriented crystal grains is smaller, the texture content difference is smaller, and the content of random oriented crystal grains is higher; and the total deformation (rolling amount) of the tantalum plate target material is smaller, and a thicker tantalum target can be produced.
Finally, it should be noted that the above-mentioned description is only a preferred embodiment of the present invention, and those skilled in the art can make various similar representations without departing from the spirit and scope of the present invention.
Claims (5)
1. A processing method for improving the microstructure uniformity of a tantalum plate for a thick target material is characterized by comprising the following steps:
step one, forging and cogging tantalum ingots prepared by an electron beam melting method to break coarse columnar crystal structures in initial tantalum ingots, and then carrying out slicing and primary annealing heat treatment procedures to obtain tantalum plate blanks for subsequent rolling;
secondly, placing the tantalum plate blank in a high-temperature furnace for heat preservation for 30min, then synchronously rolling the tantalum plate blank in the horizontal direction, after each rolling pass, rotating the tantalum plate blank in the horizontal plane counterclockwise by 135 degrees relative to the feeding direction of the tantalum plate blank, and then rolling the tantalum plate blank in the next pass;
after eight passes of rolling, returning the tantalum plate blank to the furnace and preserving the heat for 10min, and continuing to roll for four passes, finally keeping the total rolling quantity of the tantalum plate blank to be 70%;
and thirdly, placing the rolled tantalum plate blank in a 1100 ℃ tube furnace for secondary annealing to obtain a completely recrystallized structure, introducing argon gas as a protective gas in the secondary annealing process, and performing rapid water quenching treatment on the sample after the annealing is finished to obtain the tantalum plate target.
2. The processing method for improving the microstructure uniformity of the tantalum plate for the thick target material according to claim 1, wherein the processing method comprises the following steps: in the first step, the tantalum ingot is forged, cogging and sliced, and a sample is annealed for 3 hours at 1050 ℃ in a vacuum furnace, and then primary annealing heat treatment is carried out.
3. The processing method for improving the microstructure uniformity of the tantalum plate for the thick target material according to claim 1, wherein the processing method comprises the following steps: in the second step, the temperature in the high temperature furnace is kept at 500-800 ℃.
4. The processing method for improving the microstructure uniformity of the tantalum plate for the thick target material according to claim 1, wherein the processing method comprises the following steps: and in the third step, the tantalum plate blank is placed in a tube furnace at 1100 ℃ for 30-60min for re-annealing.
5. The processing method for improving the microstructure uniformity of the tantalum plate for the thick target material according to claim 1, wherein the processing method comprises the following steps: in the second step, the temperature in the high-temperature furnace is kept at 500 ℃;
and in the third step, the tantalum plate blank is placed in a tube furnace at 1100 ℃ for 30min for re-annealing.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114990502A (en) * | 2022-06-02 | 2022-09-02 | 有研亿金新材料(山东)有限公司 | Preparation method of high-performance tantalum target blank |
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| CN101205601A (en) * | 2007-11-02 | 2008-06-25 | 北京有色金属研究总院 | Nested sputtering target and method for manufacturing the same |
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Application publication date: 20210601 |