CN112864007B - Method for forming semiconductor structure - Google Patents
Method for forming semiconductor structure Download PDFInfo
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- CN112864007B CN112864007B CN201911189534.2A CN201911189534A CN112864007B CN 112864007 B CN112864007 B CN 112864007B CN 201911189534 A CN201911189534 A CN 201911189534A CN 112864007 B CN112864007 B CN 112864007B
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000011282 treatment Methods 0.000 claims abstract description 75
- 230000035484 reaction time Effects 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000005121 nitriding Methods 0.000 claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000011261 inert gas Substances 0.000 claims abstract description 22
- 239000012298 atmosphere Substances 0.000 claims abstract description 18
- 239000012495 reaction gas Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 42
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 20
- 238000012423 maintenance Methods 0.000 abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000428 dust Substances 0.000 description 6
- 238000011418 maintenance treatment Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention relates to a method for forming a semiconductor structure. The forming method of the semiconductor structure comprises the following steps: providing a substrate, said substrateAn oxide layer is formed on the bottom surface; heating the substrate to a processing temperature, and carrying out nitridation treatment on the substrate, wherein the nitridation treatment comprises the following steps: maintaining the substrate under an inert gas atmosphere and a first pressure for a time T1aThen introducing nitriding reaction gas into the inert gas atmosphere, and carrying out reaction treatment on the substrate at a second pressure for T2a(ii) a The nitriding process is repeated until a predetermined hold time and a predetermined reaction time are reached. The invention can effectively increase the content of nitrogen element in the oxide layer and reduce the maintenance cost and the generation cost of the machine.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a forming method of a semiconductor structure.
Background
As the size of semiconductor devices continues to shrink, the thickness of gate oxide layers used in high performance logic devices is required to shrink. However, as the thickness of the gate oxide layer is reduced, a series of problems such as interface trapped charges, leakage current, etc. begin to occur. To solve this problem, the currently mainstream processing method is to perform Nitridation processing on the gate oxide layer, such as Remote Plasma Nitridation (RPN), rapid thermal Nitridation, furnace Nitridation, decoupled Plasma Nitridation, well implantation and/or polysilicon implantation, wherein Remote Plasma Nitridation is the most commonly used Nitridation technique.
Due to the requirement of high concentration nitrogen element content in the device, the nitrogen element content in the device can be increased only by prolonging the nitridation time, which inevitably increases the risk of generating particle dust and limits the upper limit of N% to a certain extent. Meanwhile, too long nitriding time may cause great damage to the equipment, so that the frequency and cost of maintaining the equipment are increased, and the production cost and the production efficiency are finally increased.
Disclosure of Invention
The invention provides a method for forming a semiconductor structure, which is used for solving the problem of low content of nitrogen in a device in the prior art.
In order to solve the above problems, the present invention provides a method for forming a semiconductor structure, comprising the steps of:
providing a substrate, wherein an oxide layer is formed on the surface of the substrate;
heating the substrate to a processing temperature, and carrying out nitridation treatment on the substrate, wherein the nitridation treatment comprises the following steps:
maintaining the substrate under an inert gas atmosphere and a first pressure for a time T1aThen introducing nitriding reaction gas into the inert gas atmosphere, and carrying out reaction treatment on the substrate at a second pressure for T2a；
The nitriding process is repeated until a predetermined hold time and a predetermined reaction time are reached.
Optionally, an oxide layer is formed on the surface of the substrate, and the oxide layer includes: and carrying out thermal oxidation treatment on the substrate to obtain the oxide layer.
Optionally, the first pressure is greater than the second pressure.
Optionally, the ratio of the first pressure to the second pressure is greater than or equal to 10.
Optionally, the maintaining time T1aGreater than or equal to the reaction time T2a。
Optionally, when repeating the nitridation process, the holding time T of each nitridation process1aAnd the reaction time T2aThe same or different.
Optionally, when the nitridation process is repeated, the flow rate of the nitridation reaction gas in each nitridation process is the same.
Optionally, in the nitriding treatment, a flow rate of the inert gas is greater than a flow rate of the nitriding reaction gas.
Optionally, the reaction time T of each nitridation process is repeated2aGradually increasing until said predetermined reaction time is reached.
Optionally, the number of times of the nitriding treatment is 2 to 6.
According to the forming method of the semiconductor structure, the oxidation layer is subjected to nitriding treatment by adopting the step of repeatedly nitriding treatment for many times, so that partial nitriding of the oxidation layer is realized, and each nitriding treatment comprises two steps of maintaining treatment under the inert gas atmosphere and the first pressure, and introducing nitriding reaction gas into the inert gas atmosphere and reacting treatment under the second pressure, so that the content of nitrogen elements in the oxidation layer is effectively increased in a mode of not increasing the nitriding reaction time, the generation of particle dust in the nitriding process can be effectively reduced or even avoided, the yield of the semiconductor structure is improved, and the maintenance cost and the generation cost of a machine table are reduced.
Drawings
FIG. 1 is a flow chart of a method of forming a semiconductor structure in accordance with an embodiment of the present invention;
FIGS. 2A-2E are schematic cross-sectional views of a process that may be used to advantage in forming a semiconductor structure according to embodiments of the present invention;
FIG. 3 is a schematic illustration of a repeat nitridation process in accordance with an embodiment of the present invention;
FIG. 4 is a graph of the number of repetitions of a nitriding process versus nitrogen content in accordance with an embodiment of the present invention;
FIG. 5 is a graph comparing the nitrogen content of a semiconductor structure formed by a method of an embodiment of the present invention with a prior art method.
Detailed Description
The following describes in detail a specific embodiment of a method for forming a semiconductor structure according to the present invention with reference to the accompanying drawings.
The present embodiment provides a method for forming a semiconductor structure, fig. 1 is a flowchart of a method for forming a semiconductor structure according to an embodiment of the present invention, and fig. 2A to 2E are schematic cross-sectional views of main processes in a process for forming a semiconductor structure according to an embodiment of the present invention. As shown in fig. 1 and fig. 2A to fig. 2E, the method for forming a semiconductor structure according to this embodiment includes the following steps:
step S11, providing a substrate 20, wherein the surface of the substrate 20 has an oxide layer 22, as shown in fig. 2B.
Specifically, the substrate 20 may be a Si substrate, a Ge substrate, a SiGe substrate, an SOI (Silicon On Insulator) or GOI (Germanium On Insulator) or the like. In this embodiment mode, the substrate 20 is preferably a Si substrate. The substrate 20 has a number of active regions therein separated by Shallow Trench Isolation (STI) structures 21.
Optionally, an oxide layer 22 is formed on the surface of the substrate 20, and includes: and carrying out thermal oxidation treatment on the substrate 20 to obtain the oxide layer 22.
Specifically, the step of forming the oxide layer 22 on the surface of the substrate 20 may include: first, a substrate 20 is provided, as shown in fig. 2A; then, an ISSG (In-Situ vapor growth) process is used to form the oxide layer 22 on the surface of the substrate 20. In the present embodiment, a specific material of the oxide layer 22 may be, but is not limited to, silicon dioxide. The oxide layer 22 may subsequently be a gate oxide layer in a transistor.
Step S12, heating the substrate to a processing temperature, and performing a nitridation process on the substrate, wherein the nitridation process includes:
step S13, performing a maintenance process on the substrate 20 under an inert gas atmosphere and a first pressure for a maintenance time T1aThen, introducing a nitriding reaction gas into the inert gas atmosphere, and performing a reaction treatment on the substrate 20 at a second pressure for a reaction time T2a；
Step S14, judging whether the preset maintaining time and the preset reaction time are reached, if not, repeating the nitridation treatment of step S13; if yes, the process proceeds to step S15, and the process ends.
FIG. 3 is a schematic illustration of a repeat nitridation process in accordance with an embodiment of the present invention. Specifically, after the oxide layer 22 shown in fig. 2B is formed, first, the substrate 20 having the oxide layer 22 is subjected to a first maintenance process under an inert gas atmosphere and a first pressure, so as to perform a gas purge on a reaction chamber accommodating the substrate 20 to discharge particles such as fine particles and dust inside the reaction chamber, and on the other hand, by adding a maintenance process stage between the reaction process stages and making the pressure in the maintenance process stage greater than that in the reaction process stage, the temperature rise rate of the substrate is increased, and the nitridation reaction rate is effectively increased by a dual effect of the pressure effect and the temperature effect. Then, a nitriding reaction gas is introduced into the inert gas atmosphere, and the substrate 20 subjected to the first maintenance treatment is subjected to a first reaction treatment at a second pressure, thereby completing a first nitriding treatment C1. Then, it is determined whether the sum of the holding times of the respective holding processes performed has reached a predetermined holding time and whether the sum of the reaction times of the respective reaction processes performed has reached a predetermined reaction time, and if not, the substrate 20 is again subjected to the second holding process under the inert gas atmosphere and the first pressure, and a nitriding reaction gas is introduced into the inert gas atmosphere and the substrate subjected to the second holding process is subjected to the second reaction process under the second pressure, thereby completing the second nitriding process C2. Then, it is judged whether or not the sum of the holding times of the respective holding treatments has reached a predetermined holding time and whether or not the sum of the reaction times of the respective reaction treatments has reached a predetermined reaction time, and if not, the third nitriding treatment C3 is performed. And repeating the steps until the preset maintaining time and the preset reaction time are reached. In fig. 3, n is a positive integer greater than or equal to 2. The resulting structure is shown in fig. 2C. In fig. 2C, after multiple nitridation processes, the oxide layer 22 is differentiated into an un-nitrided oxide layer (e.g., made of silicon dioxide) 221 and a nitrided oxide layer (e.g., made of silicon oxynitride) 222.
In this embodiment, the whole nitriding process of the oxide layer 22 is divided into a plurality of nitriding treatment steps, and each nitriding treatment includes two stages, namely a maintenance treatment stage and a reaction treatment stage, so that on one hand, the risk of increasing particulate dust caused by the continuous progress of the reaction treatment stage is reduced or even avoided, and the damage to the equipment caused by the continuous progress of the reaction treatment stage is also avoided; on the other hand, the maintaining treatment stage and the reaction treatment stage are alternately performed, so that the gas purging of the reaction chamber is facilitated, the accumulation of the particle dust in the reaction chamber is avoided, and the smooth and efficient performance of the nitriding treatment process is facilitated.
Optionally, the first pressure is greater than the second pressure.
Optionally, the ratio of the first pressure to the second pressure is greater than or equal to 10.
For example, the first pressure is 0.5to 5torr, and the second pressure is 0.05to 0.5 torr. By setting the first pressure of the maintenance process stage to be greater than the second pressure of the reaction process stage, it is helpful to accelerate the rate of temperature rise of the substrate 20 itself, thereby increasing the nitridation rate of the subsequent reaction stage by the dual effects of pressure and temperature.
Optionally, the maintaining time T1aGreater than or equal to the reaction time T2a。。
For example, the hold time T1aIs 5s to 140s, the reaction time T2aIs 5s to 100 s. The holding time T is set during the course of a single nitriding treatment1aLess than the predetermined holding time, and the reaction time T2aLess than a predetermined said reaction time.
Optionally, in the nitriding treatment, a flow rate of the inert gas is greater than a flow rate of the nitriding reaction gas.
The inert gas is a gas forming the inert gas atmosphere. The following description will be given by taking an example in which the inert gas atmosphere is an argon atmosphere and the nitriding reaction gas is nitrogen. In the first nitridation treatment, first, a first maintenance treatment of 5to 140 seconds is performed on the substrate 20 having the oxide layer 22 in an environment where a first pressure is 0.5to 5torr, a microwave power is 1200 to 2500W, a substrate heater temperature is 300 to 500 ℃, and an argon gas flow rate is 400 to 2000 sccm; and then, performing a first reaction treatment on the oxide layer 22 subjected to the first maintenance treatment for 5s to 100s under an environment of a second pressure of 0.05torr to 0.5torr, a microwave power of 1200W to 2500W, a temperature of the substrate heater of 300 ℃ to 500 ℃, an argon gas flow rate of 400sccm to 2000sccm, and a nitrogen gas flow rate of 100sccm to 500sccm, thereby completing the first nitridation treatment. Then, judging whether the sum of the maintenance time of each maintenance treatment has reached a predetermined maintenance time and whether the sum of the reaction time of each reaction treatment has reached a predetermined reaction time, and if not, performing a second preheating treatment on the primary oxide layer 22 subjected to the first nitriding treatment for 5to 140 seconds again in an environment where the first pressure is 0.5to 5torr, the microwave power is 1200 to 2500W, the substrate heater temperature is 300 to 500 ℃, and the argon gas flow rate is 400 to 2000 sccm; and performing a second reaction treatment on the oxide layer 22 subjected to the second maintenance treatment for 5s to 100s under an environment of a second pressure of 0.05torr to 0.5torr, a microwave power of 1200W to 2500W, a temperature of the substrate heater of 300 ℃ to 500 ℃, an argon gas flow rate of 400sccm to 2000sccm, and a nitrogen gas flow rate of 100sccm to 500sccm, thereby completing a second nitridation treatment. Then, it is judged whether or not the sum of the holding times of the respective holding treatments has reached a predetermined holding time and whether or not the sum of the reaction times of the respective reaction treatments has reached a predetermined reaction time, and if not, the third nitriding treatment C3 is performed. If so, until a predetermined hold time and a predetermined reaction time are reached.
The person skilled in the art can select the repetition number of the nitridation treatment according to actual needs, for example, the amount of the nitrogen element to be incorporated according to needs, which is not limited in the present embodiment. In order to ensure the content of nitrogen element while improving the generation efficiency, the nitriding treatment may be optionally repeated 2 to 6 times. And correspondingly adjusting the maintaining time and the reaction time in each nitriding treatment process according to the repetition times of the nitriding treatment.
FIG. 4 is a graph showing the relationship between the number of repetitions of the nitriding treatment and the content of nitrogen element in the embodiment of the present invention. Specifically, as shown in fig. 4, as the number of times of the nitridation process is increased, the content of nitrogen in the oxide layer is increased. In the present embodiment, the repetition number of the nitridation treatment is set to 2 to 6 times, so that the production efficiency of the semiconductor structure can be improved while the content of nitrogen in the oxide layer is ensured.
Optionally, when repeating the nitridation process, the holding time T of each nitridation process1aAnd the reaction time T2aThe same or different.
Optionally, when the nitridation process is repeated, the flow rate of the nitridation reaction gas in each nitridation process is the same.
Specifically, as shown in fig. 3, the holding time in the first nitridation process C1, the holding time in the second nitridation process C2, the holding time in the third nitridation process C3, … …, and the holding time in the nth nitridation process Cn are all the same or different from each other; the reaction time in the first nitriding treatment C1, the reaction time in the second nitriding treatment C2, the reaction time in the third nitriding treatment C3, … …, and the reaction time in the nth nitriding treatment Cn are all the same or different from each other. The relative size and proportional relationship between the maintaining time of each nitridation process and the relative size and proportional relationship between the reaction time of each nitridation process can be determined by those skilled in the art according to actual needs. In addition, the skilled in the art can reasonably allocate the maintaining time and the reaction time in each nitridation treatment according to the predetermined maintaining time, the predetermined reaction time and the preset number of times of the nitridation treatment, so as to achieve the effect of effectively increasing the content of nitrogen element in the oxide layer without increasing the nitridation reaction time.
Optionally, the reaction time T of each nitridation process is repeated2aGradually increasing until said predetermined reaction time is reached.
Specifically, by making the reaction time during the next nitridation treatment longer than the reaction time during the previous nitridation treatment, for example, the reaction time in the second nitridation treatment C2 is longer than the reaction time in the first nitridation treatment C1, and the reaction time in the third nitridation treatment C3 is longer than the reaction time in the second nitridation treatment C2, the predetermined reaction time is made constantThis helps reduce the number of repetitions of the nitriding process. Wherein the reaction time T of each nitriding treatment2aThe specific way of the gradual increase may be gradually increased according to a preset relationship, such as an arithmetic progression, and a person skilled in the art may set the gradual increase according to actual needs.
FIG. 5 is a graph comparing the nitrogen content of a semiconductor structure formed by a method of an embodiment of the present invention with a prior art method. In fig. 5, the abscissa represents the total reaction time T0 (i.e., the sum of the reaction times of the nitridation treatments), the ordinate represents the mass percentage content of nitrogen in the treated oxide layer, the dotted line represents the prior art correspondence between the total nitridation treatment time and the mass percentage content of nitrogen in the treated oxide layer, and the solid line represents the correspondence between the total reaction time and the mass percentage content of nitrogen in the treated oxide layer in the semiconductor structure formed by the present embodiment. As shown in fig. 5, the content of nitrogen element in the oxide layer after the treatment of the present embodiment is higher than that of the oxide layer after the treatment of the prior art, while maintaining the total reaction time.
When the oxide layer 22 is a gate oxide layer, after the structure shown in fig. 2C is formed, a conductive material such as polysilicon may be deposited on the surface of the nitrided oxide layer 222 to form a gate 23, as shown in fig. 2D; then, part of the gate 23, the nitrided oxide layer 222, and the non-nitrided oxide layer 221 are removed, and an insulating sidewall 24 covering the non-nitrided oxide layer 221, the nitrided oxide layer 222, and the sidewall of the gate 23 is formed, as shown in fig. 2E.
In the method for forming a semiconductor structure according to the present embodiment, the oxidation layer is nitrided by repeating the nitridation step a plurality of times, so that partial nitridation of the oxidation layer is achieved, and each time of the cyclic nitridation includes two steps of maintaining treatment in an inert gas atmosphere and a first pressure, and reacting treatment in an inert gas atmosphere by introducing a nitridation reaction gas and a second pressure, so that the content of nitrogen in the oxidation layer is effectively increased by not increasing the nitridation reaction time, and generation of particle dust in the nitridation process can be effectively reduced or even avoided, so that the yield of the semiconductor structure is increased, and the maintenance cost and the generation cost of a machine are reduced.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. A method for forming a semiconductor structure, comprising the steps of:
providing a substrate, wherein an oxide layer is formed on the surface of the substrate;
heating the substrate to a processing temperature, and carrying out nitridation treatment on the substrate, wherein the nitridation treatment comprises the following steps:
maintaining the substrate under an inert gas atmosphere and a first pressure for a time T1aThen introducing nitriding reaction gas into the inert gas atmosphere, and carrying out reaction treatment on the substrate at a second pressure for T2a(ii) a The first pressure is greater than the second pressure, and the ratio of the first pressure to the second pressure is greater than or equal to 10; in the nitriding treatment, the flow rate of the inert gas is greater than that of the nitriding reaction gas;
repeating the nitriding process until a predetermined hold time and a predetermined reaction time are reached;
repeating the nitriding treatment, the reaction time T of each nitriding treatment2aGradually increasing until said predetermined reaction time is reached.
2. The method of claim 1, wherein the substrate surface is formed with an oxide layer comprising: and carrying out thermal oxidation treatment on the substrate to obtain the oxide layer.
3. The half of claim 1Method for forming a conductor structure, characterized in that said holding time T1aGreater than or equal to the reaction time T2a。
4. The method as claimed in claim 1, wherein the duration T of each nitridation process is repeated1aAnd the reaction time T2aThe same or different.
5. The method as claimed in claim 1, wherein the flow rate of the nitridation reaction gas is the same for each nitridation process when the nitridation processes are repeated.
6. The method of claim 1, wherein the nitridation process is repeated 2-6 times.
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| JP2008192919A (en) * | 2007-02-06 | 2008-08-21 | Canon Inc | Nitriding method of silicone oxide film |
| JP2011066367A (en) * | 2009-09-19 | 2011-03-31 | Hitachi Kokusai Electric Inc | Method for treating substrate |
| CN102181819A (en) * | 2004-03-03 | 2011-09-14 | 东京毅力科创株式会社 | Plasma nitridation processing method |
| CN103579076A (en) * | 2012-07-26 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | Method for forming shallow channel isolation region |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181819A (en) * | 2004-03-03 | 2011-09-14 | 东京毅力科创株式会社 | Plasma nitridation processing method |
| JP2008192919A (en) * | 2007-02-06 | 2008-08-21 | Canon Inc | Nitriding method of silicone oxide film |
| JP2011066367A (en) * | 2009-09-19 | 2011-03-31 | Hitachi Kokusai Electric Inc | Method for treating substrate |
| CN103579076A (en) * | 2012-07-26 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | Method for forming shallow channel isolation region |
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