CN112863793A - Large-size ceramic substrate - Google Patents
Large-size ceramic substrate Download PDFInfo
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- CN112863793A CN112863793A CN202110037581.6A CN202110037581A CN112863793A CN 112863793 A CN112863793 A CN 112863793A CN 202110037581 A CN202110037581 A CN 202110037581A CN 112863793 A CN112863793 A CN 112863793A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
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- H01C—RESISTORS
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Abstract
The invention discloses a large-size ceramic substrate. The large-size ceramic substrate includes a ceramic substrate body; a sheet forming region disposed on a surface of the ceramic substrate body; the white edges are arranged on the periphery of the film forming area; the sheet forming area is provided with a plurality of primary dents and secondary dents formed on the surface of the ceramic substrate body; the primary dimples and the secondary dimples intersect perpendicularly; the depth of the primary dent is greater than that of the secondary dent; the outer dimensions of the ceramic substrate are as follows: the length is more than or equal to 89.60mm, the width is more than or equal to 79.60mm, and the thickness is more than or equal to 0.43 mm. The invention greatly increases the production efficiency of the substrate by increasing the length and width of the ceramic substrate, can effectively control the occurrence of warping, is beneficial to large-scale automatic production, and reduces the cost of materials, labor and time.
Description
Technical Field
The invention relates to the technical field of ceramic substrates, in particular to a large-size ceramic substrate.
Background
The chip Resistor (SMD Resistor) is a Resistor manufactured by printing an electronic paste including a mixture of metal powder and glass frit on a ceramic substrate, and has: the assembly density is high, and the product volume is small; the electric welding connection point is stable and is suitable for reflow welding and wave soldering; the reliability is high, the electrical frequency characteristic is good, and the electromagnetic and radio frequency interference is small; easy to realize automatic production and the like.
The chip resistor has the excellent performance, so that the chip resistor is widely applied to the fields of high-end computers, industrial equipment, automatic control equipment, medical equipment, high-tech multimedia electronic equipment and the like. With the rapid economic growth in recent years, the annual demand of the domestic and foreign sheet resistance market is increased year by year, and the large-scale market demand puts higher demands on the production efficiency of products.
The most applied substrates for producing chip resistors in the prior art are medium substrates with the size LIn＝70±0.30mm、WIn60 + -0.30 mm, such a panel can be cut into 1598 type 0805 or 798 type 1206.
In the case where a large number of circuit elements are required in a large-scale integrated circuit, the production efficiency of the conventional substrate cannot meet the increasing market demand. Therefore, it is necessary to develop a large-sized ceramic substrate to solve the problem of low production efficiency of the chip resistor, but the ceramic substrate has large size, and the problems of warpage, incomplete casting and drying, defective appearance and the like are caused.
Disclosure of Invention
The present invention is directed to solving at least one of the above-mentioned problems of the prior art large-size ceramic substrates. Accordingly, an object of the present invention is to provide a large-sized ceramic substrate; the second object of the present invention is to provide a method for producing such a large-sized ceramic substrate; it is a further object of the present invention to provide applications of such large-format ceramic substrates. The ceramic substrate provided by the invention can reduce warpage, and solves the problem of low production efficiency in the conventional process of applying the ceramic substrate to a chip resistor.
In the description of the present invention, several means are one or more, and more means are two or more.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a first aspect of the invention provides a large-format ceramic substrate including a ceramic substrate body;
a sheet forming region disposed on a surface of the ceramic substrate body;
the white edges are arranged on the periphery of the film forming area;
the sheet forming area is provided with a plurality of primary dents and secondary dents formed on the surface of the ceramic substrate body; the primary dimples and the secondary dimples intersect perpendicularly; the depth of the primary dent is greater than that of the secondary dent;
the outer dimensions of the ceramic substrate are as follows: the length is more than or equal to 89.60mm, the width is more than or equal to 79.60mm, and the thickness is more than or equal to 0.43 mm.
Specifically, the primary indentation is an indentation formed on the surface of the ceramic substrate body first, and the secondary indentation is an indentation formed on the surface of the ceramic substrate body later.
According to the large-size ceramic substrate provided by the invention, the shrinkage rate of the ceramic substrate during sintering can be controlled not to be too large through controlling the depth of the primary dent and the depth of the secondary dent, so that the occurrence of warping is controlled.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the depth of the primary indentation is 0.16mm to 0.28 mm; the depth of the secondary dent is 0.07 mm-0.19 mm.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the primary dimples are longitudinal dimples and the secondary dimples are transverse dimples.
In some preferred embodiments of the large-size ceramic substrate of the present invention, the transverse indentation does not penetrate through the ceramic substrate body, leaving a blank edge on the left and right sides of the ceramic substrate body; the longitudinal dents penetrate through the ceramic substrate body, and secondary white edges are reserved on the upper side and the lower side of the ceramic substrate body.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the outer dimensions of the ceramic substrate are as follows: the length is 89.60 mm-95.40 mm, the width is 79.60 mm-85.40 mm, and the thickness is 0.43 mm-0.51 mm.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the longitudinal indentation has a length of 79.60mm to 85.40mm, and the lateral indentation has a length of 85.98mm to 91.74 mm; the length of the transverse dents exceeding the boundary of the slicing area is 0.30-0.70 mm, and primary white edges are reserved on the left side and the right side of the slicing area.
In some preferred embodiments of the large-sized ceramic substrate according to the present invention, the left and right sides of the ceramic substrate are left with equally spaced primary white edges, and the secondary dents (transverse dents) do not completely penetrate and have a length of 2.32mm to 3.71 mm.
In some preferred embodiments of the large-size ceramic substrate of the present invention, the ceramic substrate has two white edges at equal intervals on the upper and lower sides and has a first indentation (longitudinal indentation) penetrating through the white edges, and the length of the first indentation is 1.885mm to 2.270 mm.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the primary white edge is provided with a plurality of identification arcs. Therefore, the method can be used for identifying the direction and the front and back surfaces of products with the same specification in the production process of the products. In some embodiments of the present invention, the left side or the right side of the primary white edge is provided with a plurality of identification arcs.
In some preferred embodiments of the large-size ceramic substrate of the present invention, 1 to 2 recognition arcs are provided on the right side of the primary white edge.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the radius R of the circular arc is identifiedIdentification0.50 mm-1.50 mm, and the circle center of the identification arc deviates from the boundary length L of the ceramic substrate bodyString＝0.10mm～0.40mm。
In some preferred embodiments of the large-size ceramic substrate according to the present invention, the ceramic substrate body has a rectangular shape, and any three corners of the ceramic substrate body are provided with chamfers, and the remaining one corner is provided with an identification angle. Therefore, the chamfer angle is arranged, so that the product can be prevented from being damaged due to collision caused by stress concentration in the manufacturing process, and meanwhile, the function of protecting an operator is also achieved. The identification angle can be further used for identifying the direction and the front and back surfaces of products with the same specification in the production process of the products.
In some preferred embodiments of the large-format ceramic substrate of the present invention, a recognition corner is provided at the lower right of the ceramic substrate.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the dimension C of the corner is identifiedIdentification angle0.5mm to 1.5 mm. It is noted that the identification angle of the ceramic substrate is taken as the hypotenuse, which is made as an isosceles right triangle, and C is the right-angle side length.
In some preferred embodiments of the large-size ceramic substrate of the present invention, chamfers are provided at upper left, upper right, and lower left portions of the ceramic substrate.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the corner C is identifiedIdentification angle>Chamfered CChamfering。
In some preferred embodiments of the large format ceramic substrate of the present invention, the chamfer is a 45 ° chamfer.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the chamfers are all C in sizeChamfering＝0.2mm～1.0mm。
In some preferred embodiments of the large-format ceramic substrate of the present invention, the chamfer is formed by die stamping.
In some preferred embodiments of the large-size ceramic substrate of the present invention, the sheet forming region is provided with 45 to 47 longitudinal dents, and the area of each pair of longitudinal dents passes through 64 to 68 transverse dents. The large-size ceramic substrate with the specification can be suitable for 0805 type chip resistors.
In some preferred embodiments of the large-size ceramic substrate of the present invention, the sheet forming region is provided with 29 to 30 longitudinal dents, the longitudinal dents penetrate through the whole sheet forming region, and the region of each pair of longitudinal dents passes through 52 to 55 transverse dents. The large-size ceramic substrate with the specification can be suitable for a 1206 type chip resistor.
In some preferred embodiments of the large format ceramic substrate of the present invention, the large format ceramic substrate comprises the following preparation components: alumina powder, fluxing agent, additive and solvent; the additive comprises a binder and a plasticizer; the mass of the binder is 5-8% of the sum of the mass of the alumina powder and the mass of the fluxing agent. At present, the addition amount of the binder in the slurry is usually 9-14 wt%, but the invention can accelerate the processing molding (such as casting drying) and the uniform distribution of cross section particles and improve the warping by reducing the addition amount of the binder.
In the preparation components of the large-size ceramic substrate, the alumina powder and the fluxing agent are solid-phase components. In some preferred embodiments of the large-size ceramic substrate of the present invention, the mass percentage of the alumina powder is 95% to 98%, and the mass percentage of the flux is 2% to 5%.
In some preferred embodiments of the large format ceramic substrate of the present invention, the flux comprises SiO2MgO, and CaO.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the flux is SiO2And the mass ratio of MgO to CaO is (1.5-2.5): (0.5-1.5): (0.2-0.6).
In some more preferred embodiments of the large-format ceramic substrate of the present invention, the flux is SiO2And the mass ratio of MgO to CaO is (1.5-2.5): (0.5-1.5): 0.4.
in some preferred embodiments of the large format ceramic substrate of the present invention, the binder comprises at least one of polyvinyl butyral (PVB), polyvinyl alcohol, paraffin wax, stearic acid. In some embodiments of the present invention, the binder is polyvinyl butyral.
In some preferred embodiments of the large format ceramic substrate of the present invention, the mass of the plasticizer is 2% to 5% of the sum of the mass of the alumina powder and the mass of the flux.
In the preparation components of the large-format ceramic substrate of the present invention, the mass (addition amount) of the binder and the plasticizer is determined based on 100% of the solid-phase components (alumina powder and flux).
In some preferred embodiments of the large format ceramic substrate of the present invention, the plasticizer comprises at least one of phthalate esters, fatty acid esters, phosphate esters, epoxy esters.
In some more preferred embodiments of the large format ceramic substrate of the present invention, the plasticizer comprises at least one of dibutyl phthalate (DBP), dimethyl phthalate (DMP), diethyl phthalate (DEP), dioctyl phthalate (DOP), Butyl Benzyl Phthalate (BBP), di (2-ethyl) hexyl phthalate (DEHP), dioctyl phthalate (DOP), diisononyl phthalate.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the mass of the solvent is 50% to 60% of the sum of the mass of the alumina powder and the mass of the flux.
In some preferred embodiments of the large-format ceramic substrate of the present invention, the solvent comprises at least one of a benzene-based solvent and an alcohol-based solvent.
In some more preferred embodiments of the large format ceramic substrate of the present invention, the solvents are toluene and isopropanol. In some embodiments of the present invention, the binder PVB is dissolved in the solvents toluene and isopropanol to form a three-dimensional network structure binding powder, so that the slurry is fluid, and the amount of the binder is reduced to facilitate drying.
In some preferred embodiments of the large-size ceramic substrate of the present invention, the solvent has a mass ratio of toluene to isopropyl alcohol of (4 to 6): (10-13).
In some more preferred embodiments of the large-format ceramic substrate of the present invention, the mass ratio of toluene to isopropanol is 6: (10-13).
A second aspect of the present invention provides a method of producing a large-format ceramic substrate according to the first aspect of the present invention, comprising the steps of:
1) ball milling alumina powder and fluxing agent, adding additive and solvent to prepare slurry;
2) carrying out tape casting on the slurry to obtain a green body;
3) and carrying out indentation stamping and sintering on the green body to obtain the large-size ceramic substrate.
In some preferred embodiments of the method for manufacturing a large-size ceramic substrate according to the present invention, in the step 2), the slurry is coated on the PET release film through a casting nozzle, and then dried to form a blank tape. At present, the processing is carried out by adopting a tape casting mode, a solvent is volatilized from the upper surface of the slurry during tape casting, and the additive on the upper layer can also have certain loss, so that the content difference of the additive on the upper layer and the lower layer of the slurry is larger. The invention can relieve the uneven condition of the upper layer and the lower layer of the additive and reduce the warpage by reducing the dosage of the additive.
In some preferred embodiments of the method for manufacturing a large-size ceramic substrate according to the present invention, in the step 3), the indentation punching is performed on the ceramic substrate by using a knife edge structure mold.
In some preferred embodiments of the method for manufacturing a large-format ceramic substrate according to the present invention, the indentation press in step 3) includes a primary indentation and a secondary indentation that are performed sequentially. Primary/secondary dents are formed by the primary/secondary indentations, respectively.
In some preferred embodiments of the method for producing a large-format ceramic substrate according to the present invention, in the step 3), the primary indentation is a longitudinal indentation, and the secondary indentation is a transverse indentation. Longitudinal/transverse indentations are formed by longitudinal/transverse indentations, respectively. In some embodiments of the present invention, the green body is subjected to indentation punching on the ceramic substrate by a die having a longitudinal blade structure, and then the ceramic substrate is subjected to indentation punching by a transverse blade structure.
In some preferred embodiments of the method for producing a large-format ceramic substrate according to the present invention, in the step 3), the primary indentation depth is greater than the secondary indentation depth.
In some preferred embodiments of the method for manufacturing a large-format ceramic substrate according to the present invention, in the step 3), the primary indentation depth is 0.16mm to 0.28 mm; the depth of the secondary indentation is 0.07 mm-0.19 mm.
In some preferred embodiments of the method for manufacturing a large-size ceramic substrate according to the present invention, in the step 3), the sintering is performed at 1400 to 1600 ℃. The green compact obtained by indentation and pressing is subjected to liquid phase sintering, densification and recrystallization through migration of substances, so that particles are bonded, and certain strength is generated.
In some preferred embodiments of the method for preparing a large-size ceramic substrate, the method further comprises a step 4) of carrying out a warpage test on the ceramic substrate obtained by sintering, specifically, passing a marble flat plate with a certain gap at an inclination angle of 45 degrees under the action of self weight, and passing the marble flat plate to ensure that the surface flatness is qualified.
In some preferred embodiments of the method for preparing a large-size ceramic substrate, the method further comprises a step 5) of correcting the ceramic substrate which fails the warpage test in the step 4), and specifically heating and softening the ceramic substrate at 1300-1400 ℃. The warping of the ceramic substrate under the action of the dead weight is improved by the stacking firing.
In some preferred embodiments of the method for producing a large-format ceramic substrate according to the present invention, the method further comprises a step of inspecting the resultant large-format ceramic substrate product. The detection steps are as follows: red ink or blue ink is coated on the surface of the ceramic substrate product, and when a defect crack exists, the point contact of the red ink and the substrate is in line contact, so that a defect trace is formed.
A third aspect of the invention provides the use of a large format ceramic substrate according to the first aspect of the invention in the manufacture of a chip resistor.
The invention has the beneficial effects that:
the invention greatly increases the production efficiency of the substrate by increasing the length and width of the ceramic substrate, can effectively control the occurrence of warping, is beneficial to large-scale automatic production, and reduces the cost of materials, labor and time.
Specifically, compared with the prior art, the invention has the following advantages:
1) according to the invention, by increasing the length and width of the substrate, wherein the length and width are respectively increased by 20-25 mm, the substrate can be divided into 2772-3082 single 0805 chip resistor grains after being subjected to porcelain forming (the size of the single grain is L single: 1.94 ± 0.05mm, W is singly: 1.21 ± 0.05 mm); compared with 1598 medium-sized substrates, the single-grain number of the single ceramic substrate is increased by 73.5-92.9%; the single chip can be divided into 1428-1598 1206 type chip resistor single particles (the size of the single particle is L: 2.97-3.07 mm, and the size of the single particle is W: 1.44-1.54 mm), which is increased by 78.9% -100.3% compared with the existing middle substrate, thereby greatly increasing the production efficiency of the substrate; therefore, the method is beneficial to large-scale automatic production and reduces the cost of materials, labor and time.
2) By reducing the addition amount of the binder in the slurry, the tape casting drying is accelerated, the cross section particles are uniformly distributed, and the warping is improved.
3) By controlling the indentation depth, the shrinkage rate of the substrate during sintering is not too large, and the occurrence of warpage is controlled.
Drawings
FIG. 1 is a schematic view of a large-format ceramic substrate according to an embodiment of the present invention;
FIG. 2 is an enlarged schematic view at P of FIG. 1;
FIG. 3 is an enlarged schematic view at T1y in FIG. 1;
FIG. 4 is an enlarged schematic view at T1x in FIG. 1;
FIG. 5 is a schematic view of a ceramic substrate dimensional measurement method.
Detailed Description
The present invention will be described in further detail with reference to specific examples. The starting materials, reagents or apparatus used in the examples and comparative examples were obtained from conventional commercial sources or can be obtained by a method of the prior art, unless otherwise specified. Unless otherwise indicated, the testing or testing methods are conventional in the art.
The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. The orientations and positional relationships indicated in the embodiments are based on the orientations and positional relationships shown in the drawings and are only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the indicated devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, are not to be construed as limiting the present invention.
Referring to fig. 1, fig. 2, 3 and 4 are enlarged schematic views at P, T1y and T1x in fig. 1, respectively. The dimensions in the drawings are, unless otherwise specified, all in millimeters (mm). Referring to fig. 1, the first dividing line of the ceramic substrate is a single-sided indentation, and the depth T1y is 0.16 mm-0.28 mm; the second dividing line of the ceramic substrate is a single-sided indentation, and the depth T1x is 0.07 mm-0.19 mm.
FIG. 5 is a schematic view of a method for measuring the dimensions of a ceramic substrate. With reference to fig. 5, a dimension measuring method according to an embodiment of the present invention is described as follows: l ═ (L1+ L2)/2; w ═ (W1+ W2)/2; the parallelism | W1-W2| is less than or equal to 0.15 mm; the L1-L2 is less than or equal to 0.15 mm. In actual production, the classification allows the determination error to be ± 0.03 mm.
The following embodiments will be described with reference to the accompanying drawings.
Example 1
1. Putting alumina powder and a fluxing agent into a ball mill according to a certain proportion, wherein the proportion of the alumina powder in solid phase components is 95 wt%, and the proportion of the fluxing agent is SiO2MgO-CaO in a ratio of 1.5: 0.8: 0.4, the addition amount is 5 wt%. Then adding additives and solvents in a ball mill to prepare slurry. The additive mainly comprises a binder PVB and a plasticizer DBP, the additive is added according to 100 wt% of solid phase components, the binder PVB is added in an amount of 5 wt%, and the plasticizer DBP is added in an amount of 5 wt%. The amount of the solvent was 50% by mass of the powder (alumina powder and flux), and the mass ratio of toluene to isopropyl alcohol in the solvent was 6: 11.
2. tape casting: the prepared slurry is uniformly coated on a PET release film which is stably driven through a casting nozzle, and is dried through an oven to form a green body with certain thickness, density and uniformity.
3. Indentation and stamping: and (3) carrying out indentation punching on the ceramic substrate by the green body obtained in the last step through a die with a knife edge structure in the longitudinal direction and the transverse direction. The 0805 type chip resistor applied in the embodiment is provided with 45-47 longitudinal dents in the surface chip area, and the area between each pair of longitudinal dents divides the whole ceramic substrate into 2772-3082 single grains through 64-68 transverse dents. The ceramic substrate body has a right lower corner CIdentification angle0.10mm chamfer. Longitudinal indentation (one time)Indentation) depth of 0.16mm and transverse indentation (secondary indentation) depth of 0.07 mm.
4. Main firing to obtain porcelain: and carrying out liquid phase sintering on the green body obtained by indentation punching at 1500 ℃ to obtain the large-size ceramic substrate. The particles are bonded by migration densification and recrystallization of the substance, and a certain strength is generated.
5. Warping: the ceramic chips after main firing pass through a marble flat plate with a certain gap at an inclination angle of 45 degrees under the action of self weight, and the surface flatness is qualified after the marble flat plate passes through the marble flat plate.
6. And (3) correction: the substrate with unqualified warpage is softened by heating at 1400 ℃, and the warpage of the substrate under the action of self-weight force is improved by stacking and burning.
7. And (4) checking: and coating red ink or blue ink on the surface of the sample, wherein when a defect crack exists, the point contact of the red ink and the substrate is in line contact, so that a defect trace is formed.
Example 2
This example differs from example 1 only in that the amount of adhesive PVB added was 6% by weight, the remainder being the same as in example 1.
Example 3
This example differs from example 1 only in that the amount of adhesive PVB added was 8% by weight, the remainder being the same as in example 1.
Comparative example 1
This example differs from example 1 only in that the amount of adhesive PVB added was 9% by weight, the remainder being the same as in example 1.
Comparative example 2
This example differs from example 1 only in that the amount of adhesive PVB added was 14% by weight, the remainder being the same as in example 1.
Comparative example 3
This example differs from example 1 only in that the amount of adhesive PVB added was 4% by weight, the remainder being the same as in example 1.
The ceramic substrates of examples 1 to 3 and comparative examples 1 to 3 had an outer dimension L of 89.60mm, a W of 79.60mm, and a ceramic substrate thickness of 0.47mm, and the specifications thereof are shown in fig. 1 to 4.
The ceramic substrates of examples 1 to 3 and comparative examples 1 to 3 were subjected to a performance test, the test method being described below:
substrate warpage detection method
The test method comprises the following steps: parallel spacing (marble slab gap) is equal to the thickness of the substrate + warping degree;
the warpage is the distance between the highest point and the lowest point of the same surface of the substrate; namely, the maximum height difference of the substrate, the thickness of the large-sized substrate in this embodiment is 0.47mm, and the large substrate passes through a marble slab with a gap of 0.57mm at an inclination angle of 45 degrees under the action of its own weight, and the marble slab passes through the marble slab. The warp qualification rate is statistical data obtained by testing more than 10000 substrates.
Second, density
The test was carried out by draining.
Third, bending strength
The material is tested by a universal testing machine, the size of a test sample is 40 multiplied by 24mm, the test span of the testing machine is 30mm, and the reduction rate is 0.5 mm/min.
The results of the performance test of the ceramic substrates of examples 1 to 3 and comparative examples 1 to 3 are shown in Table 1.
TABLE 1 results of performance test of ceramic substrates of examples 1 to 3 and comparative examples 1 to 3
The ceramic substrate of comparative example 3 had a binder ratio of 4%, and had good warpage, but the green body was cracked during casting, and continuous production could not be carried out.
Example 4
1. Putting alumina powder and a fluxing agent into a ball mill according to a certain proportion, wherein the proportion of the alumina powder in solid phase components is 95 wt%, and the proportion of the fluxing agent is SiO2MgO-CaO in a ratio of 1.5: 0.8: 0.4, the addition amount is 5 wt%. Then adding additives and solvents in a ball mill to prepare slurry. Additive main bagThe adhesive PVB and the plasticizer DBP are included, and the additive is added according to the proportion of 100 percent relative to the solid phase component. The addition amount of PVB as a binder is 5 wt%, the addition amount of DBP as a plasticizer is 5 wt%, the amount of a solvent is 50% of the mass of the powder (alumina powder and fluxing agent), and the mass ratio of toluene to isopropanol in the solvent is 6: 11.
2. tape casting: the prepared slurry is uniformly coated on a PET release film which is stably driven through a casting nozzle, and is dried through an oven to form a green body with certain thickness, density and uniformity.
3. Indentation and stamping: and (3) carrying out indentation punching on the ceramic substrate by the green body obtained in the last step through a die with a knife edge structure in the longitudinal direction and the transverse direction. 45-47 longitudinal dents are arranged in the area of the surface in a piece, and 64-68 transverse dents are arranged in the area between each pair of longitudinal dents to separate the whole ceramic substrate into 2772-3082 single grains. The ceramic substrate body has a right lower corner CIdentification angle0.10mm chamfer. The depth of the longitudinal indentation (primary indentation) was 0.16mm and the depth of the transverse indentation (secondary indentation) was 0.07 mm.
4. Main firing to obtain porcelain: and carrying out liquid phase sintering on the green body obtained by indentation punching at 1500 ℃ to obtain the large-size ceramic substrate. The particles are bonded by migration densification and recrystallization of the substance, and a certain strength is generated.
5. Warping: the ceramic chips after main firing pass through a marble flat plate with a certain gap at an inclination angle of 45 degrees under the action of self weight, and the surface flatness is qualified after the marble flat plate passes through the marble flat plate.
6. And (3) correction: the substrate with unqualified warpage is softened by heating at 1400 ℃, and the warpage of the substrate under the action of self-weight force is improved by stacking and burning.
7. And (4) checking: and coating red ink or blue ink on the surface of the sample, wherein when a defect crack exists, the point contact of the red ink and the substrate is in line contact, so that a defect trace is formed.
Example 5
This example differs from example 4 only in that the primary indentation depth was 0.20mm and the secondary indentation depth was 0.14mm, and the rest was the same as example 4.
Example 6
This example differs from example 4 only in that the primary indentation depth was 0.23mm and the secondary indentation depth was 0.15mm, and the rest was the same as example 4.
Example 7
This example differs from example 4 only in that the primary indentation depth was 0.28mm and the secondary indentation depth was 0.19mm, and the rest was the same as example 4.
Comparative example 4
This example differs from example 4 only in that the primary indentation depth was 0.14mm and the secondary indentation depth was 0.06mm, and the rest was the same as example 4.
Comparative example 5
This example differs from example 4 only in that the primary indentation depth was 0.29mm and the secondary indentation depth was 0.20mm, and the rest was the same as example 4.
Comparative example 6
This example differs from example 4 only in that the primary indentation depth was 0.16mm and the secondary indentation depth was 0.19mm, and the rest was the same as example 4.
The ceramic substrates of examples 4 to 7 and comparative examples 4 to 6 had an outer dimension L of 95.40mm, a W of 85.40mm, and a ceramic substrate thickness of 0.47mm, and the specifications thereof are shown in fig. 1 to 4.
The results of the performance test of the ceramic substrates of examples 4 to 7 and comparative examples 4 to 6 are shown in Table 2.
TABLE 2 results of performance test of ceramic substrates of examples 4 to 7 and comparative examples 4 to 6
| Numbering | Depth of primary impression (mm) | Depth of secondary indentation (mm) | Percent warp pass (%) |
| Example 4 | 0.16 | 0.07 | 96 |
| Example 5 | 0.20 | 0.14 | 96 |
| Example 6 | 0.23 | 0.15 | 95 |
| Example 7 | 0.28 | 0.19 | 95 |
| Comparative example 4 | 0.14 | 0.06 | 92 |
| Comparative example 5 | 0.29 | 0.20 | 91 |
| Comparative example 6 | 0.16 | 0.19 | 91 |
The experimental results show that the large-size ceramic substrate provided by the invention effectively controls the occurrence of warping and has qualified appearance. The large-size ceramic substrate can be applied to large-scale production of chip resistors, can solve the problem of low production efficiency of the conventional chip resistors, can improve the production efficiency, shortens the production time, reduces the production cost, and has a very wide application prospect.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A large format ceramic substrate, characterized by:
comprises a ceramic substrate body;
a sheet forming region disposed on a surface of the ceramic substrate body;
the white edges are arranged on the periphery of the film forming area;
the sheet forming area is provided with a plurality of primary dents and secondary dents formed on the surface of the ceramic substrate body; the primary dimples and the secondary dimples intersect perpendicularly; the depth of the primary dent is greater than that of the secondary dent;
the outer dimensions of the ceramic substrate are as follows: the length is more than or equal to 89.60mm, the width is more than or equal to 79.60mm, and the thickness is more than or equal to 0.43 mm.
2. The ceramic substrate of claim 1, wherein: the depth of the primary dent is 0.16 mm-0.28 mm; the depth of the secondary dent is 0.07 mm-0.19 mm.
3. The ceramic substrate of claim 1, wherein: the primary dents are longitudinal dents, and the secondary dents are transverse dents; the transverse dents do not penetrate through the ceramic substrate body, and primary white edges are reserved on the left side and the right side of the ceramic substrate body; the longitudinal dents penetrate through the ceramic substrate body, and secondary white edges are reserved on the upper side and the lower side of the ceramic substrate body.
4. The ceramic substrate of claim 3, wherein: the outer dimensions of the ceramic substrate are as follows: the length is 89.60 mm-95.40 mm, the width is 79.60 mm-85.40 mm, and the thickness is 0.43 mm-0.51 mm; the length of the longitudinal dent is 79.60 mm-85.40 mm, and the length of the transverse dent is 85.98 mm-91.74 mm; the length of the transverse dents exceeding the boundary of the slicing area is 0.30-0.70 mm, and primary white edges are reserved on the left side and the right side of the slicing area.
5. The ceramic substrate of claim 3, wherein: the primary white edge is provided with a plurality of identification arcs.
6. The ceramic substrate according to any one of claims 1 to 3, wherein: the ceramic substrate body is rectangular, any three corners of the ceramic substrate body are provided with chamfers, and the rest one corner is provided with an identification corner.
7. The ceramic substrate according to any one of claims 1 to 3, wherein: the large-size ceramic substrate comprises the following preparation components: alumina powder, fluxing agent, additive and solvent; the additive comprises a binder and a plasticizer; the mass of the binder is 5-8% of the sum of the mass of the alumina powder and the mass of the fluxing agent.
8. The method of making a large format ceramic substrate of any of claims 1 to 7, wherein: the method comprises the following steps:
1) ball milling alumina powder and fluxing agent, adding additive and solvent to prepare slurry;
2) carrying out tape casting on the slurry to obtain a green body;
3) and carrying out indentation stamping and sintering on the green body to obtain the large-size ceramic substrate.
9. The method of claim 8, wherein: in the step 3), the indentation punching comprises a primary indentation and a secondary indentation which are sequentially carried out; the primary indentation is a longitudinal indentation, and the secondary indentation is a transverse indentation.
10. Use of the large format ceramic substrate of any one of claims 1 to 7 in the manufacture of a chip resistor.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115073148A (en) * | 2022-07-21 | 2022-09-20 | 瓷金科技(河南)有限公司 | Ceramic packaging base and preparation method thereof |
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| CN1325117A (en) * | 2000-05-23 | 2001-12-05 | 京瓷株式会社 | Porcelain base-plate for formation of chip resistance and mfg. method of chip-resistance |
| JP2003338404A (en) * | 2002-05-21 | 2003-11-28 | Kyocera Corp | Ceramic substrate having dividing grooves and manufacturing method thereof |
| CN101690428A (en) * | 2007-04-25 | 2010-03-31 | 陶瓷技术股份公司 | Chip-resistor-substrat |
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| CN115073148B (en) * | 2022-07-21 | 2023-08-08 | 瓷金科技(河南)有限公司 | Ceramic packaging base and preparation method thereof |
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