CN112858874A - Transconductance parameter measuring circuit and method - Google Patents
Transconductance parameter measuring circuit and method Download PDFInfo
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- CN112858874A CN112858874A CN202011643915.6A CN202011643915A CN112858874A CN 112858874 A CN112858874 A CN 112858874A CN 202011643915 A CN202011643915 A CN 202011643915A CN 112858874 A CN112858874 A CN 112858874A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
Abstract
The invention provides a circuit and a method for measuring transconductance parameters, which relate to the technical field of semiconductor measurement and comprise the following steps: the device comprises a parameter processing module, a voltage measuring module and a digital-to-analog conversion module which are respectively connected with the parameter processing module; the voltage measurement module is connected with the device to be tested and used for measuring the output voltage of each appointed pole of the device to be tested; the digital-to-analog conversion module is used for outputting an output value corresponding to the tested device so as to offset the direct current offset in the output voltage based on the output value; the parameter processing module is used for calculating a transconductance parameter of the tested device based on the output voltage and the output value. The invention can effectively improve the precision and stability of transconductance parameter measurement.
Description
Technical Field
The invention relates to the technical field of semiconductor measurement, in particular to a transconductance parameter measuring circuit and a transconductance parameter measuring method.
Background
Transconductance is an attribute of an electronic component, refers to a ratio of a change value of current at an output end to a change value of voltage at an input end, can be used for representing an amplification attribute of the electronic component to be tested, and is an important parameter to be referred to in the design of the electronic component. In the process of measuring the transconductance parameters of the electronic components, the gate voltage and the source voltage of the tested electronic components need to be measured, and the transconductance parameters of the tested electronic components are determined based on the difference between the gate voltage and the source voltage, but the output voltage of part of the electronic components can reach 7V to 8V, and the voltage difference is generally 100mV, that is, the magnitude of the output voltage of the tested electronic components is far greater than that of the voltage difference, so that the precision and the stability of the transconductance parameter test are seriously influenced.
Disclosure of Invention
In view of this, the present invention provides a transconductance parameter measurement circuit and a transconductance parameter measurement method, which can effectively improve the accuracy and stability of transconductance parameter measurement.
In a first aspect, an embodiment of the present invention provides a transconductance parameter measuring circuit, including: the device comprises a parameter processing module, a voltage measuring module and a digital-to-analog conversion module which are respectively connected with the parameter processing module; the voltage measuring module is connected with the device under test and used for measuring the output voltage of each appointed pole of the device under test; the digital-to-analog conversion module is used for outputting an output value corresponding to the tested device so as to offset the direct current offset in the output voltage based on the output value; the parameter processing module is used for calculating transconductance parameters of the tested device based on the output voltage and the output value.
In one embodiment, the voltage measurement module includes a high-side buffer circuit and/or a low-side buffer circuit.
In one embodiment, the designated electrode includes a gate and a source; the high-side buffer circuit is connected with the grid electrode of the device under test and used for receiving the grid electrode voltage of the device under test; the low-side buffer circuit is connected with the source electrode of the tested device and used for receiving the source electrode voltage of the tested device.
In one embodiment, the parameter processing module includes a first parameter calculating unit, an analog-to-digital converting unit and a second parameter calculating unit, which are connected in sequence; wherein the first parameter calculating unit is configured to obtain a target voltage difference value based on the gate voltage, the source voltage, and the output value; the analog-to-digital conversion unit is used for converting the target voltage difference value from an analog signal to a digital signal; the second parameter calculating unit is used for calculating the transconductance parameter of the tested device based on the converted target voltage difference value.
In an embodiment, the first parameter calculating unit includes a first subtracting circuit, configured to calculate the gate voltage, the source voltage, and the output value to obtain an initial voltage difference value, and amplify the initial voltage difference value according to a specified amplification factor to obtain a target voltage difference value.
In one embodiment, the first parameter calculation unit includes a second subtraction circuit, and an amplification circuit connected to the second subtraction circuit; the second subtraction circuit is used for calculating the gate voltage, the source voltage and the output value to obtain an initial voltage difference value; and the amplifying circuit is used for amplifying the initial voltage difference value according to the specified amplification factor to obtain a target voltage difference value.
In one embodiment, the analog-to-digital conversion unit includes an AD pre-stage buffer circuit and a high-precision AD circuit.
In one embodiment, the digital-to-analog conversion module includes a high-precision DAC circuit.
In one embodiment, the device under test comprises a voltage controlled device.
In a second aspect, an embodiment of the present invention further provides a transconductance parameter measuring method, where the method is applied to any one of the transconductance parameter measuring circuits provided in the first aspect, and the method includes: measuring, by a voltage measurement module of the measurement circuit, output voltages of respective specified poles of the device under test; outputting, by a digital-to-analog conversion module of the measurement circuit, an output value corresponding to the device under test to offset a DC offset in the output voltage based on the output value; calculating, by a parameter processing module of the measurement circuit, a transconductance parameter of the device under test based on the output voltage and the output value.
The embodiment of the invention provides a transconductance parameter measuring circuit and a method, comprising the following steps: the device comprises a voltage measuring module, a digital-to-analog conversion module and a parameter processing module, wherein the voltage measuring module and the digital-to-analog conversion module are respectively connected with the parameter processing module, the voltage measuring module is connected with the device to be tested and used for measuring output voltage of each appointed pole of the device to be tested, the digital-to-analog conversion module is used for outputting an output value corresponding to the device to be tested so as to offset direct current offset in the output voltage based on the output value, and the parameter processing module is used for calculating transconductance parameters of the device to be tested based on the output voltage and the output value. The embodiment of the invention provides a novel transconductance parameter measuring circuit, which effectively offsets direct current bias in output voltage measurement by using an output value output by a digital-to-analog conversion module through adjusting the output value, thereby obviously improving the proportion of effective small signals in the output voltage and further better improving the measurement precision and reliability of transconductance parameters.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a conventional transconductance parameter measuring circuit according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a transconductance parameter measurement circuit according to an embodiment of the present invention;
fig. 3 is a block diagram of a transconductance parameter measuring circuit according to an embodiment of the present invention;
fig. 4 is a schematic circuit structure diagram of a transconductance parameter measuring circuit according to an embodiment of the present invention;
fig. 5 is a schematic circuit diagram of another transconductance parameter measuring circuit according to an embodiment of the present invention;
fig. 6 is a flowchart illustrating a method for measuring a transconductance parameter according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the embodiments, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the transconductance parameter testing process, a testing system calculates transconductance parameters of an electronic component to be tested by measuring a GS (gate-source) voltage Vgs of the electronic component to be tested, see fig. 1 for a schematic structural diagram of a traditional measuring circuit of the transconductance parameters, specifically, a voltage measured by a measuring unit in the measuring system is the GS voltage Vgs of the electronic component to be tested, the GS voltage Vgs of a part of the electronic component may even reach 7V to 8V, and the transconductance parameters are calculated based on a voltage difference of the two measured GS voltages Vgs, and the voltage difference is generally 100 mV. For a voltage close to 10V, the measurement accuracy and stability can be usually in the order of 1mV, the calculation accuracy is less than one thousandth, but the deviation in the order of 1mV reaches about 10% for a difference voltage of 100mV, so that the accuracy and stability of the transconductance parameter test are seriously influenced. Based on this, the invention provides a transconductance parameter measuring circuit and a transconductance parameter measuring method, which can effectively improve the precision and stability of transconductance parameter measurement.
For facilitating understanding of the present embodiment, first, a transconductance parameter measuring circuit disclosed in the embodiment of the present invention is described in detail, referring to a schematic structural diagram of a transconductance parameter measuring circuit shown in fig. 2, the transconductance parameter measuring circuit includes a parameter processing module 101, and a voltage measuring module 102 and a digital-to-analog conversion module 103 respectively connected to the parameter processing module 101.
The voltage measurement module 102 is connected to the device under test for measuring the output voltage of each designated pole of the device under test. In one embodiment, the device under test may include a voltage-controlled device, such as a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), an Insulated Gate Bipolar Transistor (IGBT), etc., and the voltage-controlled device is usually provided with a Gate (G), a source (S), and a drain (D), and in practical applications, the specified poles may include the Gate and the source, that is, the voltage measurement module 102 measures the Gate voltage and the source voltage of the device under test.
The digital-to-analog conversion module 103 is configured to output an output value corresponding to the device under test to offset a dc offset in the output voltage based on the output value. In an embodiment, the digital-to-analog conversion module comprises a high-precision DAC circuit, and an output value of the digital-to-analog conversion module 103 can be adjusted according to a gate voltage and a source voltage of a device under test to counteract direct current offset of two voltage measurements as much as possible, so that the measurement precision and stability of a voltage difference value of 0.1mV magnitude can be easily realized, and compared with a 1mV magnitude error which is difficult to realize in a conventional scheme, the precision and stability of transconductance parameter measurement can be improved by one magnitude by using the digital-to-analog conversion module 103 in the embodiment of the present invention.
The parameter processing module 101 is used to calculate transconductance parameters of the device under test based on the output voltage and the output value. In an embodiment, the parameter processing module may implement functions of calculation processing, amplification processing, analog-to-digital conversion processing, and the like, process the output voltage and the output value to obtain a target voltage difference, and calculate a transconductance parameter of the device under test based on the target voltage difference, where the target voltage value may be a difference between a gate voltage and a source voltage.
The embodiment of the invention provides a novel transconductance parameter measuring circuit, which effectively offsets direct current bias in output voltage measurement by using an output value output by a digital-to-analog conversion module through adjusting the output value, thereby obviously improving the proportion of effective small signals in the output voltage and further better improving the measurement precision and reliability of transconductance parameters.
For convenience of understanding, the embodiment of the present invention explains a measurement principle of transconductance parameters, taking transconductance parameters tested during an enhanced N-channel high-power MOSFET package test as an example, the test requirements are that a given voltage Vds and a current Ids are applied between a D pole and an S pole of a device under test, and a voltage difference between the G pole and the S pole of the device under test is measured. Obtaining different Vgs by adjusting different Ids, calculating current difference delta Ids and delta Vgs, and obtaining transconductance parameter G of the device under testfsThis can be derived from the following equation:
based on this, the designated electrode in the embodiment of the present invention includes a gate and a source. In an alternative embodiment, the voltage measurement module 102 includes a high-side buffer circuit 104 and/or a low-side buffer circuit 105. For example, only the high-side buffer circuit 104 is included in the voltage measurement module 102, and the gate voltage and the source voltage of the device under test will be transmitted to the parameter processing module 101 through the high-side buffer circuit 104; or voltage measurement module 102 includes a high side buffer circuit 104 connected to the gate of the device under test for receiving the gate voltage of the device under test, and a low side buffer circuit 105 connected to the source of the device under test for receiving the source voltage of the device under test. The voltage measurement module 102 may be specifically configured based on actual requirements, and it should be noted that the accuracy and stability of the measurement circuit including only the high-side buffer circuit 104 (i.e., not including the low-side buffer circuit 105) are different from the accuracy and stability of the measurement circuit including both the high-side buffer circuit 104 and the low-side buffer circuit 105.
In one embodiment, the parameter processing module 101 includes a first parameter calculating unit 106, an analog-to-digital converting unit 107, and a second parameter calculating unit 108, which are connected in sequence. The first parameter calculating unit 106 is configured to obtain a target voltage difference value based on the gate voltage, the source voltage, and the output value, the analog-to-digital converting unit 107 is configured to convert the target voltage difference value from an analog signal to a digital signal, and the second parameter calculating unit 108 is configured to calculate a transconductance parameter of the device under test based on the converted target voltage difference value. In a specific implementation, the first parameter calculating unit 106 may adopt the first subtracting circuit 109, or may adopt the second subtracting circuit 110 and the amplifying circuit 111, the analog-to-digital converting unit 107 includes an AD pre-stage buffer circuit 112 and a high-precision AD circuit 113, and the second parameter calculating unit, that is, the control system, may calculate the transconductance parameter of the device under test according to the above calculation formula of the transconductance parameter, and may also implement human-computer interaction.
To facilitate understanding of the first parameter calculating unit 106, the embodiments of the present invention respectively provide two embodiments of the first parameter calculating unit 106: (1) the first parameter calculating unit 106 includes a first subtracting circuit 109, configured to calculate a gate voltage, a source voltage, and an output value to obtain an initial voltage difference value, and amplify the initial voltage difference value according to a specified amplification factor to obtain a target voltage difference value, in practical applications, in order to reduce the cost of the measuring circuit, a resistance value of the first subtracting circuit 109 may be properly adjusted to implement a subtracting function and an amplifying function, so that the subtracting function and the amplifying function may be simultaneously implemented by the first subtracting circuit 109 to obtain the target voltage difference value; (2) the first parameter calculating unit 106 includes a second subtracting circuit 110 and an amplifying circuit 111 connected to the second subtracting circuit 110, the second subtracting circuit 110 is configured to calculate an initial voltage difference value obtained by the gate voltage, the source voltage and the output value, and the amplifying circuit 111 is configured to amplify the initial voltage difference value according to a specified amplification factor to obtain a target voltage difference value.
It should be noted that the circuit structures of the digital-to-analog conversion module 103, the high-side buffer circuit 104, the low-side buffer circuit 105, the first subtraction circuit 109, the second subtraction circuit 110, the amplifying circuit 111, and the analog-to-digital conversion unit 107 are not limited in the embodiments of the present invention, and specifically, the required circuit structures may be set based on actual requirements to respectively implement the offset dc offset function, the buffering function, the subtracting function, the amplifying function, and the analog-to-digital conversion function.
The voltage measurement problem in the transconductance parameter test can be equivalent to the measurement problem of a tiny voltage signal with larger direct current bias, and the key for solving the problem is to eliminate the direct current bias and finish the measurement of the tiny voltage signal. Based on this, an embodiment of the present invention provides a transconductance parameter measuring circuit, referring to a frame diagram of a transconductance parameter measuring circuit shown in fig. 3, fig. 3 illustrates that the measuring circuit includes a transconductance test line, a measuring unit, and a second parameter calculating unit 108 (which may also be referred to as a control system) connected in sequence, where the measuring unit further includes a high-end buffer circuit 104, a low-end buffer circuit 105, a high-precision DAC circuit (i.e., the above digital-to-analog converting module 103), a second subtracting circuit 110, an amplifying circuit 111, and an analog-to-digital converting unit 107, where the analog-to-digital converting unit 107 includes a high-precision AD circuit 113. In specific implementation, the output value of the high-precision DAC circuit is adjusted according to the difference of Vgs voltages of the tested device, so that the direct-current voltage bias in two Vgs measurements is counteracted to the maximum extent, and the proportion of useful small signals is greatly improved. After the initial voltage difference values of the gate voltage, the source voltage and the output value are calculated by the second subtraction circuit 110, the initial voltage difference value is amplified by the amplifying circuit 111, for example, the initial voltage difference value is amplified by 10 times or even 100 times, and then the amplified initial voltage difference value is transmitted to the high-precision AD circuit 113 for measurement, so as to obtain a target voltage difference value. Since the noise of the measured signal (including the gate voltage and the source voltage) is constant, the signal-to-noise ratio of the signal passing through the amplifying circuit 111 (i.e., the initial voltage difference) is greatly improved, and the accuracy and stability of the measurement result are greatly improved. It should be noted that, since the highest output of the high-precision DAC circuit can reach 10V, and can effectively cover the turn-on voltages of most of voltage-controlled high-power devices on the market, the high-precision high-stability transconductance parameter voltage measurement scheme provided by the embodiment of the present invention is suitable for most of the transconductance parameter test requirements on the market.
Based on the above FIG. 3, the embodiment of the present invention uses a high-side buffer circuit, a low-side buffer circuit, a second subtraction circuit,The amplifying circuits are all formed by single-operational amplifying circuits, for example, a transconductance parameter measuring circuit is provided, referring to a circuit structure schematic diagram of a transconductance parameter measuring circuit shown in fig. 4, a source of a device under test is connected to a "+" end of the low-end buffer circuit 105, a gate of the device under test is connected to a "+" end of the high-end buffer circuit 104, an output of the low-end buffer circuit 105 and an output of the high-precision DAC circuit are connected to a "-" end of the second subtracting circuit 110, an output of the high-end buffer circuit 104 is connected to a "+" end of the second subtracting circuit 110, an output of the second subtracting circuit 110 is connected to a "-" end of the amplifying circuit 111, and an output of the amplifying circuit 111 is connected to an input of the analog-to-digital converting unit 107, wherein the analog-to-digital converting unit 107 includes a pre-stage buffer circuit 112 and a high-precision AD circuit 113. Referring to fig. 4, in the embodiment of the present invention, the gate voltage Vg and the source voltage Vs of the input signals of the high-side buffer circuit 104 and the low-side buffer circuit 105 are inputted by the transconductance test circuit. The high-side buffer circuit 104 and the low-side buffer circuit 105 are each constituted by a simple operational amplifier follower circuit, and the output thereof is subtracted from the output of the high-precision DAC circuit as the input of the second subtraction circuit 110. In the embodiment of the invention, the output Vo of the resistors R5, R6, R7, R8 and R9 can be adjusted to be as follows by properly adjusting the resistance values of the resistors R5, R6, R7, R8 and R9: vo Vg-Vs-VDAC. The amplifying circuit 111 in this embodiment selects an inverting amplifier formed by a single operational amplifier, amplifies the small signal to be measured, inputs the amplified small signal to the high-precision AD circuit for measurement, and feeds back the measurement result to the control system. It should be noted that the embodiment of the present invention only provides a simple implementation method of a test circuit, and in practical applications, similar functions can be implemented by more complex or even completely different circuits, and the specific implementation circuit structure of the test circuit is not limited in the embodiment of the present invention.
In addition, based on fig. 3, in the embodiment of the present invention, for example, the high-side buffer circuit, the low-side buffer circuit, and the first subtracting circuit are all formed by single operational amplifier circuits, another transconductance parameter measuring circuit is exemplarily provided, referring to the circuit structure schematic diagram of another transconductance parameter measuring circuit shown in fig. 5, the source of the device under test is connected to the "+" end of the low-side buffer circuit 105, the gate of the device under test is connected to the "+" end of the high-side buffer circuit 104, the output of the low-side buffer circuit 105 and the output of the high-precision DAC circuit are both connected to the "-" end of the first subtracting circuit 109, the output of the high-side buffer circuit 104 is connected to the "+" end of the first subtracting circuit 109, the output of the first subtracting circuit 109 is connected to the input of the analog-to-digital converting unit 107, the analog-to-digital conversion unit 107 includes an AD pre-stage buffer circuit 112 and a high-precision AD circuit 113. In an alternative embodiment, the first subtraction circuit 109 shown in fig. 5 can be obtained by combining the subtracter and the amplifier module into one by properly designing the resistance values of the resistors R5, R6, R7, R8, and R9, so that the cost can be reduced. In addition, because the possibility that more than one layer is interfered when the measured signal exceeds one stage of operational amplifier is provided, the alternative scheme reduces the interference on the measured signal by reducing the signal loop by one stage.
It should be noted that the emphasis of the embodiment of the present invention is to introduce a high-precision DAC circuit and an amplifier circuit into the transconductance parameter voltage measurement, and both the high-side buffer circuit and the low-side buffer circuit are preferred circuits, and in practical applications, even if the high-side buffer circuit and the low-side buffer circuit are not provided in the measurement circuit, as long as the processing methods of the measured voltage in the transconductance parameter are all to cancel the useless high dc offset and then amplify and measure the useful measured small-difference voltage signal, it should be considered as violating the rights of the present invention.
In summary, the transconductance parameter measurement circuit provided in the embodiments of the present invention at least has the following characteristics:
(1) and offsetting useless high direct current offset in the transconductance parameter test by using a high-precision DAC circuit.
(2) The amplifier amplifies the small signal to be measured, so that the anti-interference capability of the signal to be measured is greatly improved, and the accuracy and the stability of the voltage measurement of the transconductance parameter are improved by one order of magnitude.
(3) Meanwhile, the DAC can randomly designate an output value, and the output range is wide, so that the method is suitable for transconductance parameter testing of voltage-controlled high-power semiconductor devices with various amplitudes.
For the transconductance parameter measurement circuit provided in the foregoing embodiment, an embodiment of the present invention provides a transconductance parameter measurement method, which is applied to the transconductance parameter measurement circuit provided in the foregoing embodiment, and refer to a flow diagram of a transconductance parameter measurement method shown in fig. 6, where the method mainly includes the following steps S602 to S606:
in step S602, the output voltage of each designated pole of the device under test is measured by the voltage measurement module of the measurement circuit. In one embodiment, the circuit under test may be a voltage controlled device and the gate may include a gate and a source.
In step S604, an output value corresponding to the device under test is output through the digital-to-analog conversion module of the measurement circuit to cancel the dc offset in the output voltage based on the output value.
In step S606, a transconductance parameter of the device under test is calculated based on the output voltage and the output value by the parameter processing module of the measurement circuit.
The method for measuring the transconductance parameters, provided by the embodiment of the invention, is applied to the novel transconductance parameter measuring circuit, and the output value output by the digital-to-analog conversion module is adjusted to effectively offset the direct current bias in the output voltage measurement by using the output value, so that the proportion of effective small signals in the output voltage is obviously improved, and the measuring precision and the reliability of the transconductance parameters are further improved.
The method provided by the embodiment of the present invention has the same implementation principle and technical effect as the foregoing measurement circuit embodiment, and for the sake of brief description, no part of the method embodiment is mentioned, and reference may be made to the corresponding contents in the foregoing measurement circuit embodiment.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A transconductance parameter measurement circuit, comprising: the device comprises a parameter processing module, a voltage measuring module and a digital-to-analog conversion module which are respectively connected with the parameter processing module; wherein the content of the first and second substances,
the voltage measurement module is connected with the device under test and used for measuring the output voltage of each appointed pole of the device under test;
the digital-to-analog conversion module is used for outputting an output value corresponding to the tested device so as to offset the direct current offset in the output voltage based on the output value;
the parameter processing module is used for calculating transconductance parameters of the tested device based on the output voltage and the output value.
2. The transconductance parameter measuring circuit of claim 1, wherein the voltage measuring module comprises a high-side buffer circuit and/or a low-side buffer circuit.
3. The transconductance parameter measuring circuit of claim 2, wherein said designated pole comprises a gate and a source;
the high-side buffer circuit is connected with the grid electrode of the device under test and used for receiving the grid electrode voltage of the device under test;
the low-side buffer circuit is connected with the source electrode of the tested device and used for receiving the source electrode voltage of the tested device.
4. The transconductance parameter measuring circuit according to claim 3, wherein the parameter processing module comprises a first parameter calculating unit, an analog-to-digital converting unit and a second parameter calculating unit which are connected in sequence; wherein the content of the first and second substances,
the first parameter calculation unit is used for obtaining a target voltage difference value based on the gate voltage, the source voltage and the output value;
the analog-to-digital conversion unit is used for converting the target voltage difference value from an analog signal to a digital signal;
the second parameter calculating unit is used for calculating the transconductance parameter of the tested device based on the converted target voltage difference value.
5. The transconductance parameter measurement circuit of claim 4, wherein the first parameter calculation unit comprises a first subtraction circuit, configured to calculate the gate voltage, the source voltage, and the output value to obtain an initial voltage difference value, and amplify the initial voltage difference value according to a specified amplification factor to obtain a target voltage difference value.
6. The transconductance parameter measuring circuit according to claim 4, wherein said first parameter calculating unit comprises a second subtracting circuit, and an amplifying circuit connected to said second subtracting circuit; wherein the content of the first and second substances,
the second subtraction circuit is used for calculating the grid voltage, the source voltage and the output value to obtain an initial voltage difference value;
and the amplifying circuit is used for amplifying the initial voltage difference value according to the specified amplification factor to obtain a target voltage difference value.
7. The circuit for measuring transconductance parameters of claim 4, wherein the analog-to-digital conversion unit comprises an AD pre-stage buffer circuit and a high-precision AD circuit.
8. The transconductance parameter measuring circuit of claim 1, wherein the digital-to-analog conversion module comprises a high-precision DAC circuit.
9. A transconductance parameter measurement circuit according to claim 1, wherein said device under test comprises a voltage controlled device.
10. A method for measuring a transconductance parameter, the method being applied to a transconductance parameter measuring circuit according to any one of claims 1 to 9, the method comprising:
measuring, by a voltage measurement module of the measurement circuit, output voltages of respective specified poles of the device under test;
outputting, by a digital-to-analog conversion module of the measurement circuit, an output value corresponding to the device under test to offset a DC offset in the output voltage based on the output value;
calculating, by a parameter processing module of the measurement circuit, a transconductance parameter of the device under test based on the output voltage and the output value.
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