CN112858256A - Method and device for distinguishing black phosphorus crystal axes, terminal equipment and storage medium - Google Patents
Method and device for distinguishing black phosphorus crystal axes, terminal equipment and storage medium Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 239000013078 crystal Substances 0.000 title claims abstract description 93
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- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
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- USWJSZNKYVUTIE-UHFFFAOYSA-N bis(sulfanylidene)rhenium Chemical compound S=[Re]=S USWJSZNKYVUTIE-UHFFFAOYSA-N 0.000 description 1
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Abstract
The application is applicable to the technical field of semiconductor materials, and provides a method and a device for distinguishing a black phosphorus crystal axis, terminal equipment and a storage medium. In the embodiment of the application, the Raman spectrum information of the black phosphorus sample is tested under the parallel polarization configuration; determining two main shaft directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information; and determining the Raman intensity ratio corresponding to each main shaft direction, and determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio, thereby accurately and conveniently judging the crystal axis of the black phosphorus.
Description
Technical Field
The application belongs to the technical field of semiconductor materials, and particularly relates to a method and a device for distinguishing a black phosphorus crystal axis, terminal equipment and a storage medium.
Background
With the successful preparation of graphene in 2004, two-dimensional materials have attracted extensive attention of researchers. Two-dimensional materials can be classified into isotropic systems (e.g., graphene, molybdenum disulfide, etc.) and anisotropic systems (e.g., black phosphorus, gallium telluride, rhenium disulfide, etc.) with highly symmetric lattice structures according to the symmetry of the lattice structure. Compared with isotropic layered materials, the anisotropic layered materials have higher degree of freedom in various physical properties such as electricity, optics, thermal properties, mechanics and the like by using unique anisotropic in-plane lattice structures, and have no alternative position in the field of novel devices of polarization resolution which cannot be realized by isotropic two-dimensional materials.
The black phosphorus belonging to the anisotropic layer material has ultrahigh room temperature carrier mobility and adjustable direct band gap from a visible band to a near infrared band, so that the black phosphorus not only provides an excellent platform for the basic research of two-dimensional materials, but also shows great potential in the application of electronic and photoelectronic devices, and thus the black phosphorus is prepared in the anisotropic layer material.
Generally, when physical properties of anisotropic layered materials are studied, they are associated with their internal corresponding crystal axes. In the prior art, the crystal axis in the black phosphorus is generally judged by measuring the angle-dependent direct current conductance, the method needs to carry out micro-nano processing on the black phosphorus to manufacture an electrode, but the complicated manufacturing process can cause long time consumption and high operation difficulty, and the method needs to process the black phosphorus, so that researches on other physical properties and applications of the black phosphorus are greatly limited, and the obtained resolution (the number of direct current conductance values) is limited by the number of the electrodes, thereby causing great limitation on the method. Therefore, how to accurately and conveniently judge the black phosphorus crystal axis becomes the current weight.
Disclosure of Invention
The embodiment of the application provides a method, a device, a terminal device and a storage medium for distinguishing black phosphorus crystal axes, and can solve the problem that the black phosphorus crystal axes cannot be accurately and conveniently judged in the prior art.
In a first aspect, an embodiment of the present application provides a method for distinguishing a black phosphorus crystal axis, including:
testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration;
determining two main shaft directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information;
and determining the Raman intensity ratio corresponding to each main axis direction, and determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio.
In a second aspect, an embodiment of the present application provides an apparatus for distinguishing a black phosphorus crystal axis, including:
the testing module is used for testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration;
the main shaft determining module is used for determining two main shaft directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information;
and the crystal axis determining module is used for determining the Raman intensity ratio corresponding to each main shaft direction and determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio.
In a third aspect, an embodiment of the present application provides a terminal device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor implements any of the steps of the method for distinguishing a black phosphorus crystal axis when executing the computer program.
In a fourth aspect, the present application provides a computer-readable storage medium, where a computer program is stored, and the computer program, when executed by a processor, implements the steps of any one of the above methods for distinguishing black phosphorus crystal axes.
In a fifth aspect, embodiments of the present application provide a computer program product, which, when run on a terminal device, causes the terminal device to perform any one of the methods for distinguishing black phosphorus crystal axes in the first aspect.
According to the embodiment of the application, the Raman spectrum information of the black phosphorus sample is tested by utilizing the parallel polarization configuration, so that the collection efficiency of the Raman spectrum information is improved, two main shaft directions of the polarization Raman response of the black phosphorus sample are determined according to the Raman spectrum information, the Raman intensity ratio corresponding to each main shaft direction is determined, the crystal axis of the black phosphorus sample is determined according to the Raman intensity ratios corresponding to the two main shaft directions, and the crystal axis of the black phosphorus sample is accurately and conveniently judged.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic flow chart of a first method for distinguishing black phosphorus crystal axes provided in an embodiment of the present application;
FIG. 2 is a schematic structural diagram of an apparatus for measuring Raman spectrum information of a black phosphorus sample according to an embodiment of the present application;
FIG. 3 is a second schematic flow chart of a method for distinguishing black phosphorus crystal axes provided in the embodiments of the present application;
fig. 4 is a schematic diagram of a first polarization raman response of black phosphorus nanoplates provided by embodiments of the present application;
fig. 5 is a second polarization raman response diagram of black phosphorus nanoplates provided by embodiments of the present application;
FIG. 6 is a third schematic flow chart of a method for distinguishing black phosphorus crystal axes provided in the embodiments of the present application;
FIG. 7 is a schematic structural diagram of an apparatus for distinguishing black phosphorus crystal axes provided in an embodiment of the present application;
fig. 8 is a schematic structural diagram of a terminal device according to an embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.
Fig. 1 is a schematic flow chart of a method for distinguishing black phosphorus crystal axes in an embodiment of the present application, where an execution subject of the method may be a terminal device, as shown in fig. 1, where the method for distinguishing black phosphorus crystal axes may include the following steps:
and S101, testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration.
Because the sample to be measured needs to be processed when the crystal axis of the black phosphorus sample is measured at present, and then great limitation is generated, in this embodiment, the terminal device measures the black phosphorus sample by adopting a non-contact optical method without any processing on the black phosphorus sample and any damage, the optical method adopts a polarization Raman spectrum technology, and the crystal axis judgment is carried out by acquiring Raman spectrum information of the black phosphorus nanosheet, so that the crystal axis of the black phosphorus is accurately and conveniently judged. In addition, in the embodiment, the raman signal of the black phosphorus nanosheet is collected under the parallel polarization configuration, so that the collection efficiency of the raman signal of the black phosphorus nanosheet is improved, and the raman spectrum information of the black phosphorus nanosheet is more effectively tested. The terminal device can adopt a raman spectrometer equipped with a 532nm laser to test the raman signal of the black phosphorus nanosheet, as shown in fig. 2, fig. 2 is a schematic structural diagram of a device for measuring the raman spectrum information of the black phosphorus sample, laser is polarized through a linear polarizer 1, is focused to the black phosphorus sample through an objective lens to be tested, and the raman signal is collected by the spectrometer after passing through a filter and the linear polarizer 2. The black phosphorus sample has great potential in anisotropic layered materials due to its excellent physical properties, and the present embodiment illustrates how to distinguish the in-plane crystal axes of the black phosphorus nanosheets.
Specifically, two-dimensional nanoplatelets having a thickness of about several tens of nanometers can be mechanically exfoliated from a bulk single crystal of black phosphorus, and transferred to SiO2And the/Si substrate is placed on a rotating platform in the figure 2, and the Raman spectrum of the black phosphorus nanosheet is tested under a preset parallel polarization configuration. Among them, the laser power used for testing the black phosphorus in fig. 2 cannot be too large because the black phosphorus is unstable.
In one embodiment, step S101 includes: and sequentially rotating the rotating platform for placing the black phosphorus sample by a preset step length within a preset range, and testing the Raman spectrum of the black phosphorus sample after each rotation to obtain Raman spectrum information within the preset range.
Under the same test condition, as shown in fig. 2, by sequentially rotating the rotating platform on which the black phosphorus nanosheets are placed by a preset step length within a preset range, an included angle between the polarization direction of the laser and a Zigzag (ZZ) crystal axis of the black phosphorus sample can be changed, and the raman spectrum of the black phosphorus nanosheets after each angle change is tested, so that angle-dependent raman spectrum information is obtained. Wherein the preset range is 0-360 degrees; the preset step length is 15 degrees; the rotary platform for placing the black phosphorus nanosheets can be a manual rotary platform manually operated by a user or an electric rotary platform.
It can be understood that due to the anisotropy of the in-plane lattice structure of the anisotropic material, when the included angle between the polarization direction of the incident laser and the in-plane crystal axis of the material is changed, the intensity of the raman signal is also changed, so that when the included angle is changed from 0 ° to 360 ° in 15 ° step length, the polarization raman intensity information, i.e. the raman spectrum information, dependent on the angle of the black phosphorus nanosheet can be obtained.
In one embodiment, as shown in fig. 3, before step S101, the method includes:
step S301, a rotating platform with a linear polarizer is controlled in the raman scattering signal optical path to adjust the angle of the linear polarizer, and the rayleigh scattering signal intensity after the angle of the linear polarizer is adjusted each time is obtained through an aluminum mirror.
Step S302, when the intensity of the Rayleigh scattering signal is adjusted to be minimum, the current configuration is set to be a parallel polarization configuration.
In this embodiment, as shown in fig. 2, the terminal device controls the rotating platform in which the linear polarizer 2 is installed in the raman scattering signal optical path to adjust the angle of the linear polarizer 2, and after adjusting the angle of the linear polarizer each time, the terminal device obtains the rayleigh scattering signal intensity at zero wave number by testing the raman spectrum of the aluminum mirror. The angle of the linear polarizer is thus adjusted continuously by means of the rotating platform on which the linear polarizer 2 is mounted, until a configuration is obtained in which the intensity of the rayleigh scattered signal is minimal, i.e. a configuration in which the direction of polarization of the scattered light is the same as that of the incident light, and this configuration is set to a parallel polarization configuration for assisting the test sample. Wherein, the linear polaroid 2 is used for analyzing polarization; the rotary platform can adopt an electric rotary platform and also can adopt a manual rotary platform.
And S102, determining two main axis directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information.
In this embodiment, if it is desired to determine the in-plane crystallographic axes of the black phosphorus nanosheets by using the polarization raman spectroscopy, two main axis directions of the polarization raman response of the black phosphorus nanosheets need to be determined in advance, and then the corresponding crystallographic axes are accurately distinguished according to the determined main axis directions, so that the terminal device needs to obtain the polarization raman response of the black phosphorus nanosheets by using the raman spectral information of the tested black phosphorus nanosheets, thereby determining the two in-plane crystallographic axes directions.
In one embodiment, step S102 includes: acquiring Raman intensity information of a first preset phonon mode and a second preset phonon mode from Raman spectrum information; determining a symmetry axis of the polarization Raman response of the black phosphorus sample according to Raman intensity information of the first preset phonon mode and the second preset phonon mode; the direction corresponding to the symmetry axis is taken as the main axis direction.
In this embodiment, due to the anisotropy of the lattice structure in the anisotropic material plane, when the included angle between the polarization direction of the incident laser and the crystal axis in the material plane changes, the intensity of the raman characteristic peak of the material changes, but the peak position of the raman characteristic peak of the material hardly changes, so that after the terminal device acquires the angle-dependent raman spectrum information, the raman intensity information of the first preset phonon mode and the raman intensity information of the second preset phonon mode depending on the angle are acquired from a series of raman spectrum information, and the raman intensity information of the two phonon modes depending on the angle are plotted in the same polar coordinate graph, so as to obtain the polarization raman response of the material, and according to the symmetry of the response, the symmetry axis of the polarization raman response of the black phosphorus sample is determined, and the direction corresponding to the symmetry axis is the main axis direction, i.e. two main axis directions of the polarization raman response in the two phonon modes can be determined, as shown in fig. 4 and 5. Taking fig. 4 as an example, which is a schematic diagram of a first polarization raman response of a black phosphorus nanosheet, it can be seen from fig. 4 that two principal axis directions of the response are along the 0 ° (180 °) and 90 ° (270 °) directions, respectively, and at this time, the two directions can be determined to be in-plane crystal axis directions of the black phosphorus sample, but specifically, which direction corresponds to the AC crystal axis and which direction corresponds to the ZZ crystal axis is unknown at this time. Wherein the first predetermined phonon mode is Ag 1Mode, i.e., -361 cm-1A phonon mode; the second predetermined phonon mode is Ag 2Mode, i.e., -466 cm-1Phonon mode.
And S103, determining a Raman intensity ratio corresponding to each main axis direction, and determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio.
In the embodiment, the terminal device accurately and conveniently determines the crystal axis of the black phosphorus sample according to the Raman intensity ratio of the two main axis directions of the polarization Raman response of the black phosphorus nanosheet, so that the accuracy of crystal axis judgment of the black phosphorus sample is improved. It will be appreciated that for certain anisotropic materials, for example disulphideRhenium may have its crystal axis determined from the polarized raman response of a particular phonon mode. However, the polarization raman response of the black phosphorus sample is too complex, and the polarization raman response changes with the thickness of the black phosphorus sample, the wavelength of incident laser light and the type of the substrate, so that the main axis direction of the response changes in a flip manner between the AC crystal axis and the ZZ crystal axis with the change of experimental conditions, and the crystal axes cannot be accurately distinguished, as shown in fig. 4 and 5, fig. 5 is a second polarization raman response schematic diagram of the black phosphorus nanosheet, and fig. 4 and 5 are polarization raman response schematic diagrams tested in different thickness regions on the same black phosphorus nanosheet, from which it can be seen that a is ag 2One of the major axes corresponding to the patterns points at 0 in fig. 4 and at 90 in fig. 5; as another example, Ag 1One of the principal axes corresponding to the modes points to 0 ° in fig. 4, but is isotropic in fig. 5, so that the crystal axes cannot be distinguished accurately when only the principal axis direction is obtained, and the complex response of the black phosphorus needs to be further processed according to the raman intensity ratio, so as to distinguish the crystal axes of the black phosphorus sample accurately.
In one embodiment, as shown in fig. 6, step S103 includes:
step S601, determining Raman intensities of a first preset phonon mode and a second preset phonon mode from Raman spectrum information according to the angle corresponding to the main shaft direction.
Step S602, calculating a ratio of raman intensities of the first preset phonon mode and the second preset phonon mode to obtain a raman intensity ratio corresponding to the main axis direction.
In this embodiment, the terminal device determines the raman intensities of the first preset phonon mode and the second preset phonon mode in each main axis direction respectively according to the angles corresponding to the two main axis directions of the polarization raman response of the black phosphorus sample, calculates the raman intensity ratio thereof, and determines the crystal axis according to the raman intensity ratio.
Specifically, as can be seen from fig. 4, when the first predetermined phonon mode is ag 1The second predetermined phonon mode is Ag 2In the mode, the black phosphorus polarization Raman response can be seenThe corresponding two main axis directions respectively correspond to 0 degree and 90 degrees, so that the corresponding Raman intensity ratios at the two angles are calculated
In one embodiment, step S103 further comprises:
step S603, comparing the Raman intensity ratios of the two main shaft directions;
and step S604, taking the main shaft direction with the larger Raman intensity ratio as the armchair crystal axis of the black phosphorus sample, and taking the main shaft direction with the smaller Raman intensity ratio as the sawtooth crystal axis of the black phosphorus sample.
In this embodiment, the terminal device compares the raman intensity ratios of the two main axis directions, and designates the main axis direction with a large raman intensity ratio as an Armchair (AC) crystal axis of the black phosphorus sample, and designates the main axis direction with a small raman intensity ratio as a Zigzag (ZZ) crystal axis of the black phosphorus sample, so as to accurately distinguish the two in-plane crystal axes of the black phosphorus sample by a raman peak intensity ratio method, thereby solving the limitation of judging the black phosphorus crystal axis only under specific conditions, improving universality, further promoting basic research on anisotropic physical properties of the black phosphorus, and promoting practical application of future black phosphorus-related devices, and the raman intensity ratio method can also be applied to judging the crystal axes of other anisotropic layered materials with complicated polarization raman response.
Compared with the prior art, the method is simpler, more convenient and more efficient, and saves resources by only Raman measurement without a crystal axis judgment method of sample transfer and electrode manufacturing. The layered two-dimensional material with quantum confinement effect is favorable for better development, provides a unique material platform for basic research of physical and chemical properties, and further promotes the development of the layered two-dimensional material in the fields of electronic devices, optoelectronic devices, flexible devices, catalysis, energy storage, water purification, antibacterial coatings and the like.
Specifically, as can be seen from fig. 4, the two principal axis directions of the black phosphorus polarization raman response correspond to 0 ° and 90 °, respectively, based on the calculated raman intensity ratio in the two directions
The direction of the main axis with a large raman intensity ratio can be determined to be 90 °, so that the 90 ° direction corresponds to the AC crystal axis of the black phosphorus sample. Accordingly, the major axis direction in which the raman intensity ratio is small is 0 °, so the 0 ° direction corresponds to the ZZ crystal axis of the black phosphorus sample. Further, the accuracy of the results was verified based on fig. 5, and it can be seen from fig. 5 that the direction of the major axis having a larger raman intensity ratio was 90 °, the direction of the major axis having a smaller raman intensity ratio was 0 °, and the results were identical to the results of fig. 4, which shows the accuracy of the black phosphorus crystal axis determination based on the raman peak intensity ratio method.
According to the embodiment of the application, the Raman spectrum information of the black phosphorus sample is tested by utilizing the parallel polarization configuration, so that the collection efficiency of the Raman spectrum information is improved, two main shaft directions of the polarization Raman response of the black phosphorus sample are determined according to the Raman spectrum information, the Raman intensity ratio corresponding to each main shaft direction is determined, the crystal axis of the black phosphorus sample is determined according to the Raman intensity ratios corresponding to the two main shaft directions, and the crystal axis of the black phosphorus sample is accurately and conveniently judged.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
Fig. 7 is a schematic structural diagram of an apparatus for distinguishing black phosphorus crystal axes according to an embodiment of the present application, where, as shown in fig. 7, the apparatus for distinguishing black phosphorus crystal axes may include:
the testing module 701 is used for testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration.
And a principal axis determining module 702, configured to determine two principal axis directions of the polarization raman response of the black phosphorus sample according to the raman spectrum information.
And a crystal axis determining module 703, configured to determine a raman intensity ratio corresponding to each main axis direction, and determine a crystal axis of the black phosphorus sample according to the raman intensity ratio.
In one embodiment, the spindle determining module may include:
and the acquisition unit is used for acquiring the Raman intensity information of the first preset phonon mode and the second preset phonon mode from the Raman spectrum information.
And the symmetry axis determining unit is used for determining the symmetry axis of the polarization Raman response of the black phosphorus sample according to the Raman intensity information of the first preset phonon mode and the second preset phonon mode.
And the direction determining unit is used for taking the direction corresponding to the symmetry axis as the main axis direction.
In one embodiment, the crystal axis determining module may include:
and the intensity determining unit is used for determining the Raman intensities of the first preset phonon mode and the second preset phonon mode from the Raman spectrum information according to the angle corresponding to the main shaft direction.
And the calculating unit is used for calculating the ratio of the Raman intensities of the first preset phonon mode and the second preset phonon mode to obtain the Raman intensity ratio corresponding to the main shaft direction.
In one embodiment, the crystal axis determining module may further include:
and the comparison unit is used for comparing the Raman intensity ratios of the two main shaft directions.
And the crystal axis determining unit is used for taking the main axis direction with a larger Raman intensity ratio as the armchair crystal axis of the black phosphorus sample and taking the main axis direction with a smaller Raman intensity ratio as the sawtooth crystal axis of the black phosphorus sample.
In one embodiment, the crystal axis determining module may further include:
the first predetermined phonon mode is Ag 1A mode; the second predetermined phonon mode is Ag 2Mode(s).
In one embodiment, the apparatus for distinguishing black phosphorus crystal axes may further include:
and the control module is used for controlling a rotating platform provided with a linear polaroid in the Raman scattering signal light path to adjust the angle of the linear polaroid, and acquiring the intensity of the Rayleigh scattering signal after the angle of the linear polaroid is adjusted each time through an aluminum mirror.
And the setting module is used for setting the current configuration as a parallel polarization configuration when the intensity of the Rayleigh scattering signal is adjusted to be minimum.
In one embodiment, the test module may include:
and the testing unit is used for sequentially rotating the rotating platform for placing the black phosphorus sample by a preset step length in a preset range, testing the Raman spectrum of the black phosphorus sample after each rotation, and obtaining Raman spectrum information in the preset range.
According to the embodiment of the application, the Raman spectrum information of the black phosphorus sample is tested by utilizing the parallel polarization configuration, so that the collection efficiency of the Raman spectrum information is improved, two main shaft directions of the polarization Raman response of the black phosphorus sample are determined according to the Raman spectrum information, the Raman intensity ratio corresponding to each main shaft direction is determined, the crystal axis of the black phosphorus sample is determined according to the Raman intensity ratios corresponding to the two main shaft directions, and the crystal axis of the black phosphorus sample is accurately and conveniently judged.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the apparatus and the module described above may refer to corresponding processes in the foregoing system embodiments and method embodiments, and are not described herein again.
Fig. 8 is a schematic structural diagram of a terminal device according to an embodiment of the present application. For convenience of explanation, only portions related to the embodiments of the present application are shown.
As shown in fig. 8, the terminal device 8 of this embodiment includes: at least one processor 800 (only one is shown in fig. 8), a memory 801 connected to the processor 800, and a computer program 802 stored in the memory 801 and executable on the at least one processor 800, such as a program for distinguishing black phosphor axes. The processor 800 executes the computer program 802 to implement the steps of the above embodiments of the method for distinguishing black phosphorus crystal axes, such as the steps S101 to S103 shown in fig. 1. Alternatively, the processor 800 implements the functions of the modules in the device embodiments, for example, the functions of the modules 701 to 703 shown in fig. 7, when executing the computer program 802.
Illustratively, the computer program 802 may be divided into one or more modules, which are stored in the memory 801 and executed by the processor 800 to implement the present application. The one or more modules may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution process of the computer program 802 in the terminal device 8. For example, the computer program 802 may be divided into a test module 701, a spindle determining module 702, and a crystal axis determining module 703, and the specific functions of each module are as follows:
the testing module 701 is used for testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration;
a principal axis determining module 702, configured to determine two principal axis directions of the polarization raman response of the black phosphorus sample according to the raman spectrum information;
and a crystal axis determining module 703, configured to determine a raman intensity ratio corresponding to each main axis direction, and determine a crystal axis of the black phosphorus sample according to the raman intensity ratio.
The terminal device 8 may include, but is not limited to, a processor 800 and a memory 801. Those skilled in the art will appreciate that fig. 8 is merely an example of the terminal device 8, and does not constitute a limitation of the terminal device 8, and may include more or less components than those shown, or combine some of the components, or different components, such as an input-output device, a network access device, a bus, etc.
The Processor 800 may be a Central Processing Unit (CPU), and the Processor 800 may be other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The storage 801 may be an internal storage unit of the terminal device 8, such as a hard disk or a memory of the terminal device 8. In other embodiments, the memory 801 may be an external storage device of the terminal device 8, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like provided on the terminal device 8. Further, the memory 801 may include both an internal storage unit and an external storage device of the terminal device 8. The memory 801 is used for storing an operating system, an application program, a Boot Loader (Boot Loader), data, and other programs, such as program codes of the computer programs. The above-described memory 801 may also be used to temporarily store data that has been output or is to be output.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned functions may be distributed as different functional units and modules according to needs, that is, the internal structure of the apparatus may be divided into different functional units or modules to implement all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other ways. For example, the above-described embodiments of the apparatus/terminal device are merely illustrative, and for example, the division of the above modules or units is only one logical function division, and there may be other division manners in actual implementation, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit may be stored in a computer-readable storage medium if it is implemented in the form of a software functional unit and sold or used as a separate product. Based on such understanding, all or part of the processes in the methods of the embodiments described above can be implemented by a computer program, which can be stored in a computer-readable storage medium and can implement the steps of the embodiments of the methods described above when the computer program is executed by a processor. The computer program includes computer program code, and the computer program code may be in a source code form, an object code form, an executable file or some intermediate form. The computer-readable medium may include at least: any entity or device capable of carrying computer program code to a photographing apparatus/terminal apparatus, a recording medium, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), an electrical carrier signal, a telecommunications signal, and a software distribution medium. Such as a usb-disk, a removable hard disk, a magnetic or optical disk, etc. In certain jurisdictions, computer-readable media may not be an electrical carrier signal or a telecommunications signal in accordance with legislative and patent practice.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (10)
1. A method for distinguishing black phosphorus crystal axes, comprising:
testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration;
determining two main axis directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information;
and determining a Raman intensity ratio corresponding to each main shaft direction, and determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio.
2. The method for distinguishing the crystal axis of black phosphorus according to claim 1, wherein the determining two main axis directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information comprises:
acquiring Raman intensity information of a first preset phonon mode and a second preset phonon mode from the Raman spectrum information;
determining a symmetry axis of the polarization Raman response of the black phosphorus sample according to Raman intensity information of the first preset phonon mode and the second preset phonon mode;
and taking the direction corresponding to the symmetry axis as the main axis direction.
3. The method for distinguishing black phosphorus crystal axes according to claim 1, wherein the determining the raman intensity ratio corresponding to each principal axis direction comprises:
determining Raman intensities of a first preset phonon mode and a second preset phonon mode from the Raman spectrum information according to the angle corresponding to the main shaft direction;
and calculating the ratio of the Raman intensities of the first preset phonon mode and the second preset phonon mode to obtain the Raman intensity ratio corresponding to the main shaft direction.
4. The method for distinguishing the crystal axis of black phosphorus according to claim 3, wherein the determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio comprises:
comparing the Raman intensity ratios of the two main axis directions;
the main axis direction with a large Raman intensity ratio is used as the armchair crystal axis of the black phosphorus sample, and the main axis direction with a small Raman intensity ratio is used as the sawtooth crystal axis of the black phosphorus sample.
5. The method according to claim 3, wherein the first predetermined phonon mode is Ag 1A mode; what is needed isThe second predetermined phonon mode is Ag 2Mode(s).
6. The method for distinguishing the crystal axis of black phosphorus according to claim 1, wherein before testing the raman spectral information of the black phosphorus sample in a parallel polarization configuration, comprising:
controlling a rotating platform provided with a linear polaroid in a Raman scattering signal light path to adjust the angle of the linear polaroid, and acquiring the intensity of a Rayleigh scattering signal after the angle of the linear polaroid is adjusted each time through an aluminum mirror;
when the rayleigh scattered signal strength is minimized, the current configuration is set to a parallel polarization configuration.
7. The method for distinguishing the crystal axis of black phosphorus according to claim 1, wherein the testing of the raman spectral information of the black phosphorus sample in a parallel polarization configuration comprises:
and sequentially rotating the rotating platform for placing the black phosphorus sample by a preset step length within a preset range, and testing the Raman spectrum of the black phosphorus sample after each rotation to obtain the Raman spectrum information within the preset range.
8. An apparatus for distinguishing a black phosphorus crystal axis, comprising:
the testing module is used for testing the Raman spectrum information of the black phosphorus sample under the parallel polarization configuration;
the main shaft determining module is used for determining two main shaft directions of the polarization Raman response of the black phosphorus sample according to the Raman spectrum information;
and the crystal axis determining module is used for determining the Raman intensity ratio corresponding to each main shaft direction and determining the crystal axis of the black phosphorus sample according to the Raman intensity ratio.
9. A terminal device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the method for distinguishing black phosphorus crystal axes according to any one of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, in which a computer program is stored, which, when being executed by a processor, carries out the steps of a method for distinguishing black phosphorus crystal axes according to any one of claims 1 to 7.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114018898A (en) * | 2021-11-08 | 2022-02-08 | 中国科学院地质与地球物理研究所 | Forsterite crystal orientation method based on polarized laser Raman spectrum |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4802760A (en) * | 1987-03-25 | 1989-02-07 | Mitsubishi Denki Kabushiki Kaisha | Raman microprobe apparatus for determining crystal orientation |
| JP2007248280A (en) * | 2006-03-16 | 2007-09-27 | Nec Soft Ltd | Determination method of protein crystallization, crystallinity discrimination method of protein crystal, and device used in the discrimination |
| CN105115956A (en) * | 2015-07-06 | 2015-12-02 | 天津职业技术师范大学 | Method for measuring Euler angle of wurtzite crystal by using Raman spectrometer |
| CN110333223A (en) * | 2019-07-15 | 2019-10-15 | 天津大学 | The recognition methods of black phosphorus crystal orientation and device |
-
2021
- 2021-02-26 CN CN202110215240.3A patent/CN112858256A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4802760A (en) * | 1987-03-25 | 1989-02-07 | Mitsubishi Denki Kabushiki Kaisha | Raman microprobe apparatus for determining crystal orientation |
| JP2007248280A (en) * | 2006-03-16 | 2007-09-27 | Nec Soft Ltd | Determination method of protein crystallization, crystallinity discrimination method of protein crystal, and device used in the discrimination |
| CN105115956A (en) * | 2015-07-06 | 2015-12-02 | 天津职业技术师范大学 | Method for measuring Euler angle of wurtzite crystal by using Raman spectrometer |
| CN110333223A (en) * | 2019-07-15 | 2019-10-15 | 天津大学 | The recognition methods of black phosphorus crystal orientation and device |
Non-Patent Citations (4)
| Title |
|---|
| JUANXIA WU ET AL.，: "Identifying the Crystalline Orientation of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy" * |
| NANNAN MAO ET AL.，: "Direct Observation of Symmetry-Dependent Electron−Phonon Coupling in Black Phosphorus" * |
| ZHE LUO ET AL.，: ""Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus"", 《NATURE COMMUNICATIONS》 * |
| 卢旺林: "黑磷二维材料的制备及其光电特性表征" * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114018898A (en) * | 2021-11-08 | 2022-02-08 | 中国科学院地质与地球物理研究所 | Forsterite crystal orientation method based on polarized laser Raman spectrum |
| CN114018898B (en) * | 2021-11-08 | 2022-06-21 | 中国科学院地质与地球物理研究所 | Forsterite crystal orientation method based on polarized laser Raman spectrum |
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