CN112853493A - Connection compensation device for preventing local low temperature of high-temperature furnace chamber prepared from single crystal material - Google Patents

Connection compensation device for preventing local low temperature of high-temperature furnace chamber prepared from single crystal material Download PDF

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Publication number
CN112853493A
CN112853493A CN202011631419.9A CN202011631419A CN112853493A CN 112853493 A CN112853493 A CN 112853493A CN 202011631419 A CN202011631419 A CN 202011631419A CN 112853493 A CN112853493 A CN 112853493A
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heat insulation
temperature
insulation bridge
conductive heat
furnace chamber
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CN112853493B (en
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罗亚南
郭关柱
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Yunnan Agricultural University
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Yunnan Agricultural University
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Control Of Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a connection compensation device for preventing local low temperature of a high-temperature furnace chamber prepared from single crystal materials, which belongs to the technical field of crystal material preparation, wherein a conductive heat insulation bridge is connected with a conductor, the wall thickness of the conductive heat insulation bridge is greatly reduced, the contact surface area is greatly increased, and the wall is directly buried in a heat insulation layer of the furnace chamber, three temperature regions with gradually reduced temperature are respectively formed in the areas near a conductive heat insulation bridge I, a conductive heat insulation bridge II and a conductive heat insulation bridge III from the inner cavity of the heat insulation layer of the furnace chamber at high temperature to the connecting conducting strip at room temperature based on the heat transfer principle, the temperature region of the conductive heat insulation bridge I is heated and compensated by a temperature heating compensator, so that the problem that the local region of the furnace chamber in the high temperature is formed low temperature due to too fast heat conduction of the connecting conducting strip is prevented, and the uniformity of the radial temperature and the, ensures that the high-temperature furnace for preparing the single crystal material can prepare the high-quality single crystal material.

Description

Connection compensation device for preventing local low temperature of high-temperature furnace chamber prepared from single crystal material
Technical Field
The invention belongs to the technical field of crystal material preparation, and particularly relates to a connection compensation device for preventing a high-temperature furnace chamber from being locally low-temperature in single crystal material preparation.
Adding temperature compensation; 23 and 26, the thermocouple made of thermosensitive materials is wound on the outer circle of the part, the resistance value is smaller when the temperature is higher, and the resistance value is larger when the temperature is lower.
Background
When the tellurium-zinc-cadmium ternary single crystal or other double-component single crystal or single-component single crystal materials are prepared, the raw materials with higher purity are placed into a quartz ampoule, vacuum pumping is carried out, then packaging is carried out, and after the processes of high-temperature melting, swinging mixing and the like, the raw materials are placed into a crystal material growth furnace to grow for 15-20 days, so that the single crystal materials can be grown. The growth furnace is generally composed of 7 sections to 11 sections, the temperature of the inner cavity of each section of the hearth is controlled at a certain constant temperature value in a range of 950-1150 ℃, and different growth temperature gradients are formed by the combination mode of different temperatures of the sections of the growth furnace, so that the growth quality of crystal materials is influenced.
For the same section of growth furnace body, on the plane vertical to the central line of the furnace hearth, the heating temperature in the furnace cavity is required to be constant, otherwise, a uniform temperature gradient cannot be obtained in the axial direction, the growth defect of the crystal material can be caused, and the single crystal material with good quality can not be grown. The existing high-temperature furnace made of single crystal materials is characterized in that a furnace chamber of each section of furnace body is heated by one section of thermocouple, the input end and the output end of each section of thermocouple are connected with a power supply cable outside the furnace body through conducting strips, the conducting strips need to penetrate through a heat insulation layer of the furnace body and are influenced by the rapid heat transfer of the conducting strips, the temperature of a local area of an inner cavity of the furnace body corresponding to the connecting conducting strips of the thermocouple is lower than the temperature of other areas of a plane, and the uniformity of the radial temperature and the axial temperature gradient of the inner cavity of.
The thermocouple connecting device for the high-temperature furnace chamber prepared from the existing single crystal material is shown in figure 3, the high-temperature furnace prepared from the single crystal material comprises a furnace chamber heat-insulating layer 20, a thermocouple support frame 21 and a heating thermocouple 22, the heating thermocouple 22 is directly connected with a strip-shaped thermocouple connecting conducting strip 4, one end of the thermocouple connecting conducting strip 4 is connected with the heating thermocouple 22, and the other end of the thermocouple connecting conducting strip is connected to a power supply cable through a cable connecting hole 5 on the thermocouple connecting strip. The thermocouple connecting conducting strip 4 is made of metal material with good electrical conductivity, the material has good heat conductivity, the thermocouple connecting conducting strip 4 penetrates through the furnace chamber heat preservation and insulation layer 20, the inner end is communicated with the high-temperature furnace chamber, and the outer end is in a low-temperature area close to the indoor environment. The high temperature of the furnace chamber at the connecting end of the thermocouple connecting conducting strip 4 and the heating thermocouple 22 is usually lower than the temperature of other positions of the radial section of the furnace chamber, which results in non-uniform radial temperature and axial temperature gradient in the furnace chamber.
In order to solve the defects of the connecting device shown in fig. 3, the connecting device shown in fig. 4 is developed, wherein the thermocouple connecting conducting strip is changed into an S-shaped connecting conducting strip 10, the distance from the inner end of the furnace chamber to the cable connecting hole 11 at the outer end of the furnace chamber is increased, the influence of rapid heat transfer on the reduction of the temperature around the inner end is reduced, but the heating thermocouple 22 is still connected with an electrified cable through a whole conducting strip, and the large influence still exists on the non-uniform radial temperature and axial temperature gradient in the furnace chamber.
Disclosure of Invention
In order to overcome the problems in the prior art, the invention provides a connection compensation device for preventing the local low temperature of a high-temperature furnace chamber prepared from single crystal materials, which is used for preventing the heating thermocouple of the high-temperature furnace chamber prepared from the single crystal materials from rapidly transferring heat outwards through a power supply cable connecting conducting strip to cause the problem that the connecting conducting strip forms a local low-temperature region near the inner port of the high-temperature furnace chamber, effectively improving the uniformity of radial temperature and axial temperature gradient in the furnace chamber and ensuring that the high-temperature furnace prepared from the single crystal materials can prepare high-quality single crystal materials.
In order to realize the purpose, the invention is realized by the following technical scheme:
a connection compensation device for preventing a high-temperature furnace chamber prepared from single crystal materials from being locally low-temperature comprises a thermocouple support frame 21, a U-shaped electric conductor 23, a conductive heat insulation bridge I24, a connecting sleeve 25, an L-shaped electric conductor 26, a J-shaped electric conductor 27, a connecting conductive sheet 28, a conductive heat insulation bridge II 30, a conductive heat insulation bridge III 31, a temperature heating compensator 37, a high-temperature furnace chamber temperature sensor 38, a temperature comparator 39 and a control circuit 40, wherein the thermocouple support frame 21 is fixedly arranged in an inner cavity of a furnace chamber heat insulation layer 20, a heating thermocouple 22 is supported and arranged in the furnace chamber through the thermocouple support frame 21, the heating thermocouple 22 is connected to one end of the L-shaped electric conductor 26 through the connecting sleeve 25, the other end of the L-shaped electric conductor 26 is connected with the conductive heat insulation bridge I24 through the connecting sleeve 25, the temperature heating compensator 37 is wrapped outside the L-shaped electric conductor 26, and the, the input end of a temperature comparator 39 is also connected with a high-temperature furnace chamber temperature sensor 38, the output end of the temperature comparator 39 is connected to a control circuit 40, the control circuit 40 is connected with a power supply line 41, a U-shaped conductor 23 is connected between a conductive heat insulation bridge I24 and a conductive heat insulation bridge III 31 through a connecting sleeve 25, the conductive heat insulation bridge III 31 is connected with a conductive heat insulation bridge II 30 through the connecting sleeve 25, the other end of a J-shaped conductor 27 is connected with the conductive heat insulation bridge II 30 through the connecting sleeve 25, one end of the J-shaped conductor 27 is fixed on a connecting conducting strip 28, the connecting conducting strip 28 is fixed on a furnace chamber heat insulation layer 20, a connecting hole 29 for connecting a power supply cable is processed on the connecting conducting strip 28, and the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31 are buried in.
Further, electrically conductive thermal-insulated bridge I24, electrically conductive thermal-insulated bridge II 30, electrically conductive thermal-insulated bridge III 31 the structure unanimous, all include vacuum encapsulation mouth 32, left side nozzle 33, vacuum chamber 34, right side nozzle 35, vacuum chamber 34 about both ends be provided with left side nozzle 33 and right side nozzle 35 respectively, be provided with respectively in left side nozzle 33 and the right side nozzle 35 with the vacuum tube 36, the one end that vacuum chamber 34 was kept away from to right side nozzle 35 is the blind end, the one end that vacuum chamber 34 was kept away from to left side nozzle 33 is the open end, the open end of left side nozzle 33 is provided with vacuum encapsulation mouth 32.
Further, the diameters of the left side nozzle 33 and the right side nozzle 35 are the same and are both phid; the cross-sectional area of the corresponding position of the vacuum cavity 34 is equal to the cross-sectional area of the corresponding position of the left side nozzle (33) or the right side nozzle (35), the inner diameter of the vacuum cavity (34) is phi Di, and the outer diameter is phi Do, pi/4 x (Do)2- Di2)= π/4×d2。
The invention has the beneficial effects that:
according to the invention, the electric conduction heat insulation bridge is connected with the electric conductor, the wall thickness of the electric conduction heat insulation bridge is greatly reduced, the contact surface area is greatly increased, and the wall is directly buried in the heat insulation layer of the furnace chamber, three temperature regions with gradually reduced temperature are respectively formed in the areas near the electric conduction heat insulation bridge I, the electric conduction heat insulation bridge II and the electric conduction heat insulation bridge III based on the heat transfer principle from the inner cavity of the heat insulation layer of the furnace chamber at high temperature to the connecting electric conduction plate at room temperature, and the temperature region of the electric conduction heat insulation bridge I is heated and compensated by the temperature heating compensator, so that the problem that the local area in the high-temperature furnace chamber is close to low temperature due to the fact that the connecting electric conduction plate is too fast to conduct heat is prevented from forming low temperature is solved, the uniformity of the radial temperature and the axial temperature gradient in.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of the conductive thermal bridge of the present invention;
FIG. 3 is a schematic structural diagram of a conventional thermocouple junction device (I) for preparing a high temperature furnace from a single crystal material;
FIG. 4 is a schematic structural diagram of a conventional thermocouple junction device (II) for preparing a high temperature furnace from a single crystal material;
FIG. 5 is a schematic diagram of a control circuit according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, 2 and 5, a connection compensation device for preventing a local low temperature in a high temperature furnace chamber prepared by single crystal material comprises a thermocouple support frame 21, a U-shaped conductor 23, a conductive thermal insulation bridge i 24, a connecting sleeve 25, an L-shaped conductor 26, a J-shaped conductor 27, a connecting conductive sheet 28, a conductive thermal insulation bridge ii 30 and a conductive thermal insulation bridge iii 31.
A connection compensation device for preventing a high-temperature furnace chamber prepared from single crystal materials from being locally low-temperature comprises a thermocouple support frame 21, a U-shaped electric conductor 23, a conductive heat insulation bridge I24, a connecting sleeve 25, an L-shaped electric conductor 26, a J-shaped electric conductor 27, a connecting conductive sheet 28, a conductive heat insulation bridge II 30, a conductive heat insulation bridge III 31, a temperature heating compensator 37, a high-temperature furnace chamber temperature sensor 38, a temperature comparator 39 and a control circuit 40, wherein the thermocouple support frame 21 is fixedly arranged in an inner cavity of a furnace chamber heat insulation layer 20, a heating thermocouple 22 is supported and arranged in the furnace chamber through the thermocouple support frame 21, the heating thermocouple 22 is connected to one end of the L-shaped electric conductor 26 through the connecting sleeve 25, the other end of the L-shaped electric conductor 26 is connected with the conductive heat insulation bridge I24 through the connecting sleeve 25, the temperature heating compensator 37 is wrapped outside the L-shaped electric conductor 26, and the, the input end of a temperature comparator 39 is also connected with a high-temperature furnace chamber temperature sensor 38, the output end of the temperature comparator 39 is connected to a control circuit 40, the control circuit 40 is connected with a power supply line 41, a U-shaped conductor 23 is connected between a conductive heat insulation bridge I24 and a conductive heat insulation bridge III 31 through a connecting sleeve 25, the conductive heat insulation bridge III 31 is connected with a conductive heat insulation bridge II 30 through the connecting sleeve 25, one end of a J-shaped conductor 27 is connected with the conductive heat insulation bridge II 30 through the connecting sleeve 25, the other end of the J-shaped conductor 27 is fixed on a connecting conducting strip 28, the connecting conducting strip 28 is fixed on a furnace chamber heat insulation layer 20, a connecting hole 29 for connecting a power supply cable is processed on the connecting conducting strip 28, and the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31 are buried in. The invention realizes the connection among the L-shaped electric conductor 26, the U-shaped electric conductor 23 and the electric conduction heat insulation bridge III 31 by adopting the electric conduction heat insulation bridge I24, the electric conduction heat insulation bridge II 30 and the electric conduction heat insulation bridge III 31 and the connecting sleeve 25, namely the electric conduction heat insulation bridge I24, the electric conduction heat insulation bridge II 30 and the electric conduction heat insulation bridge III 31 are arranged among the L-shaped electric conductor 26, the U-shaped electric conductor 23 and the electric conduction heat insulation bridge III 31, and the whole connecting device forms a two-structure similar to an S shape, thus when the distance between the electric conduction plate 28 and the connecting point of a power supply cable is increased by the electric conduction thermocouple 22, the temperature comparison between the electric conduction plate 37 and the high-temperature furnace chamber temperature sensor 38 is carried out, the control circuit 40 controls the temperature heating compensator 37 to heat the temperature of the L-shaped electric conductor 26 based on the result of the temperature comparator 39, and prevents the local area in the high-temperature furnace chamber brought by the too fast heat conduction of the connecting 28 from forming the low temperature in the process of The effect of reducing heat transfer from the connecting conductive strips 28 to which the thermocouple 22 is connected on radial temperature and axial temperature gradient non-uniformity within the furnace chamber is disclosed.
In the invention, the structures of the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31 are consistent and respectively comprise a vacuum packaging nozzle 32, a left side nozzle 33, a vacuum cavity 34 and a right side nozzle 35, the left end and the right end of the vacuum cavity 34 are respectively provided with the left side nozzle 33 and the right side nozzle 35, the vacuum tubes 36 are respectively arranged in the left side nozzle 33 and the right side nozzle 35, one end of the right side nozzle 35, which is far away from the vacuum cavity 34, is a closed end, one end of the left side nozzle 33, which is far away from the vacuum cavity 34, is an open end, and the open end of the left side nozzle 33 is provided with the vacuum packaging nozzle 32. The vacuum cavities 34 are respectively arranged on the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31, the corresponding U-shaped electric conductor 23, L-shaped electric conductor 26 or J-shaped electric conductor 27 are connected by utilizing the left side connector 33 and the right side connector 35 of the pipeline which is arranged in the vacuum cavities 34 and is communicated with the inner cavity of the vacuum cavities, the wall thickness of the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31 is greatly reduced and the contact surface area is greatly increased compared with the traditional connecting heat conducting sheet, and the wall surfaces of the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31 are directly buried in the furnace cavity heat insulation layer 20, based on the heat transfer principle, three temperature zones with gradually reduced temperature are respectively formed in the areas near the conductive heat insulation bridge I24, the conductive heat insulation bridge II 30 and the conductive heat insulation bridge III 31 from the inner cavity of the furnace cavity heat insulation layer 20 at high temperature to the connecting heat conducting, thereby preventing the problem of low temperature near the local area in the high temperature furnace chamber caused by too fast heat conduction of the connecting conducting strips 28, and reducing the influence of the heat transfer of the connecting conducting strips 28 of the heating couple 22 on the nonuniformity of the radial temperature and the axial temperature gradient in the furnace chamber. Meanwhile, the diameters of the left side nozzle 33 and the right side nozzle 35 are the same and are both phid; the cross-sectional area of the corresponding position of the vacuum cavity 34 is equal to the cross-sectional area of the corresponding position of the left side nozzle (33) or the right side nozzle (35), the inner diameter of the vacuum cavity (34) is phi Di, and the outer diameter is phi Do, pi/4 x (Do)2- Di2)= π/4×d2(ii) a This ensures that the same current flows through the resistances of the left-hand nipple 33 and the right-hand nipple 35 per unit lengthThe heating power of the heating thermocouple 22 is not affected, comparable to the resistance through the vacuum chamber 34.
According to the invention, the electric conduction heat insulation bridge is connected with the electric conductor, the wall thickness of the electric conduction heat insulation bridge is greatly reduced, the contact surface area is greatly increased, and the wall is directly buried in the heat insulation layer of the furnace chamber, three temperature regions with gradually reduced temperature are respectively formed in the areas near the electric conduction heat insulation bridge I, the electric conduction heat insulation bridge II and the electric conduction heat insulation bridge III based on the heat transfer principle from the inner cavity of the heat insulation layer of the furnace chamber at high temperature to the connecting electric conduction plate at room temperature, and the temperature region of the electric conduction heat insulation bridge I is heated and compensated by the temperature heating compensator, so that the problem that the local area in the high-temperature furnace chamber is close to low temperature due to the fact that the connecting electric conduction plate is too fast to conduct heat is prevented from forming low temperature is solved, the uniformity of the radial temperature and the axial temperature gradient in.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.

Claims (3)

1. The utility model provides a prevent that single crystal material preparation high temperature furnace chamber is cryogenic connection compensation arrangement partially which characterized in that: the connection compensation device for preventing the local low temperature of the high-temperature furnace chamber prepared from the single crystal material comprises a thermocouple support frame (21), a U-shaped electric conductor (23), a conductive heat insulation bridge I (24), a connecting sleeve (25), an L-shaped electric conductor (26), a J-shaped electric conductor (27), a connecting electric conduction sheet (28), a conductive heat insulation bridge II (30), a conductive heat insulation bridge III (31), a temperature heating compensator (37), a high-temperature furnace chamber temperature sensor (38), a temperature comparator (39) and a control circuit (40), wherein the thermocouple support frame (21) is fixedly arranged in an inner cavity of a furnace chamber heat insulation layer (20), a heating thermocouple (22) is supported and arranged in the furnace chamber through the thermocouple support frame (21), the heating thermocouple (22) is connected to one end of the L-shaped electric conductor (26) through the connecting sleeve (25), the other end of the L-shaped electric conductor (26) is connected with the conductive heat insulation bridge I (24) through, the temperature heating compensator (37) is wrapped outside the L-shaped conductor (26), the temperature heating compensator (37) is connected with a temperature comparator (39), the input end of the temperature comparator (39) is also connected with a high-temperature furnace chamber temperature sensor (38), the output end of the temperature comparator (39) is connected with a control circuit (40), the control circuit (40) is connected with a power supply line (41), a U-shaped conductor (23) is connected between the conductive heat insulation bridge I (24) and the conductive heat insulation bridge III (31) through a connecting sleeve (25), the conductive heat insulation bridge III (31) is connected with the conductive heat insulation bridge II (30) through the connecting sleeve (25), one end of the J-shaped conductor (27) is connected with the conductive heat insulation bridge II (30) through the connecting sleeve (25), the other end of the J-shaped conductor (27) is fixed on the connecting conductive sheet (28), the connecting conductive sheet (28) is fixed on the furnace chamber heat insulation layer (20), the connecting conductive sheet (28) is provided with a connecting hole (29) for connecting a power supply cable, and the conductive heat insulation bridge I (24), the conductive heat insulation bridge II (30) and the conductive heat insulation bridge III (31) are buried in the furnace chamber heat insulation layer (20).
2. The connection compensation device for preventing the local low temperature of the high temperature furnace chamber prepared by the single crystal material as claimed in claim 1, wherein: the structure of electrically conductive heat insulation bridge I (24), electrically conductive heat insulation bridge II (30), electrically conductive heat insulation bridge III (31) unanimous, all include vacuum encapsulation mouth (32), left side connector (33), vacuum chamber (34), right side connector (35), vacuum chamber (34) about both ends be provided with left side connector (33) and right side connector (35) respectively, be provided with respectively in left side connector (33) and right side connector (35) with vacuum tube (36), the one end that vacuum chamber (34) were kept away from to right side connector (35) is the blind end, the one end that vacuum chamber (34) were kept away from to left side connector (33) is the open end, the open end of left side connector (33) is provided with vacuum encapsulation mouth (32).
3. The connection compensation device for preventing the local low temperature of the high temperature furnace chamber prepared by the single crystal material as claimed in claim 2, wherein: the diameters of the left side nozzle (33) and the right side nozzle (35) are the same and are phi d; the cross section area of the corresponding position of the vacuum cavity (34) is equal to the cross section area of the corresponding position of the left side nozzle (33) or the right side nozzle (35), the inner diameter of the vacuum cavity (34) is phi Di, and the outer diameter is phi Do, pi/4 x (Do)2- Di2)=π/4×d2。
CN202011631419.9A 2020-12-31 2020-12-31 Connection compensation device for preventing local low temperature of high-temperature furnace chamber prepared from single crystal material Active CN112853493B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202717878U (en) * 2012-07-27 2013-02-06 浙江宏业新能源有限公司 Temperature measurement and heating control device of polycrystalline ingot furnace control system
CN110284186A (en) * 2019-07-30 2019-09-27 刘冬雯 A kind of measurement control method of czochralski crystal growing furnace and its longitudinal temperature gradient

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202717878U (en) * 2012-07-27 2013-02-06 浙江宏业新能源有限公司 Temperature measurement and heating control device of polycrystalline ingot furnace control system
CN110284186A (en) * 2019-07-30 2019-09-27 刘冬雯 A kind of measurement control method of czochralski crystal growing furnace and its longitudinal temperature gradient

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