CN112840467A - Light emitting diode chip and manufacturing method thereof - Google Patents

Light emitting diode chip and manufacturing method thereof Download PDF

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Publication number
CN112840467A
CN112840467A CN202080004935.0A CN202080004935A CN112840467A CN 112840467 A CN112840467 A CN 112840467A CN 202080004935 A CN202080004935 A CN 202080004935A CN 112840467 A CN112840467 A CN 112840467A
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Prior art keywords
laser
layer
reflection layer
chip
light
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Inventor
林宗民
黄苡叡
张中英
邓有财
陈艳萍
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Priority claimed from PCT/CN2020/088747 external-priority patent/WO2021203500A1/en
Publication of CN112840467A publication Critical patent/CN112840467A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention relates to a light-emitting diode chip and a manufacturing method thereof, wherein a laser reflection layer with the capability of reflecting laser wavelength is formed on the outer surface of a functional area of an LED unit on an LED wafer, and the laser reflection layer reflects laser irradiated on the LED unit during laser cutting, so that the laser beam does not influence an epitaxial structure of the LED unit during the cutting process, and the problem that the epitaxial structure is easily damaged during the existing laser cutting process is solved.

Description

Light emitting diode chip and manufacturing method thereof
Technical Field
The invention relates to the field of light-emitting diode chips, in particular to a light-emitting diode chip and a manufacturing method thereof.
Background
In the existing LED chip manufacturing process, a laser cutting or laser stealth cutting method is usually adopted for the process of cutting and separating the LED wafer into individual LED chips. In the laser cutting process, due to the limitation of the minimum size of the laser beam and the tolerance of the alignment precision of the machine, and the narrow design of the cutting channel between the chip and the chip, the laser beam burns the functional region of the chip to cause the poor problems of electric leakage and the like of the chip. Especially, the influence is more obvious when the chip size is smaller, such as a mini-LED and a Micro-LED.
In the laser stealth cutting process, due to the laser precision deviation and the problem of oblique fracture during splitting, the size of the cutting channel is difficult to reduce (generally more than 20 μm, so as to ensure that the epitaxial structure is not damaged during cutting).
Disclosure of Invention
The invention aims to provide a light-emitting diode chip and a manufacturing method thereof, and aims to solve the problem that an epitaxial structure is easily damaged in the existing laser cutting process.
The specific scheme is as follows: a manufacturing method of a light emitting diode chip comprises the following process steps:
(1) providing an LED wafer and a laser, wherein the LED wafer comprises a substrate and a plurality of LED units positioned on the substrate, and a cutting channel is arranged between every two adjacent LED units;
(2) forming a laser reflection layer which has the reflection capability to the laser wavelength of the laser on the outer surface of the LED unit, wherein the laser reflection layer at least covers the side wall area of the LED unit at the edge of the cutting street;
(3) and performing laser tangent along the cutting channel or performing laser stealth cutting by enabling laser beams to enter the substrate from one side of the LED unit to obtain the LED chip.
The present invention also provides a light emitting diode chip, including: the laser cutting device comprises a substrate and an epitaxial structure positioned on the substrate, wherein a laser reflecting layer is arranged on the side surface of the epitaxial structure, and the laser reflecting layer has the reflecting capacity on a laser beam for cutting the substrate.
Preferably, the reflectivity of the laser reflection layer to the laser beam is 80% or more, and more preferably 90% or more, so that the width of the scribe line can be reduced to 20 μm or less, and even 15 μm or less, and the epitaxial structure is not damaged during scribing. Specifically, the wavelength of the laser beam for cutting the substrate is 1064 +/-100 nm.
In some embodiments, the laser reflective layer has a reflective capability only for the laser wavelength of the laser.
In some embodiments, the laser reflecting layer comprises a bragg reflecting layer designed for the laser wavelength of the laser, a photonic crystal reflecting layer, or a reflecting layer structure in which both the bragg reflecting layer and the photonic crystal reflecting layer are mixed.
In some embodiments, the laser reflecting layer is formed on the outer surface of the LED unit using electron beam evaporation or ion beam sputtering techniques.
In some embodiments, the laser reflecting layer also covers a top surface edge area of a side of the LED unit facing away from the substrate.
In some embodiments, a chip reflection layer having a reflection capability for the wavelength of the light emitted from the LED unit is further disposed on the outer surface of the LED unit, and the laser reflection layer is formed on the chip reflection layer. The laser reflecting layer and the chip reflecting layer can be completely overlapped or partially overlapped.
In some embodiments, the laser reflecting layer has a reflective capability for the LED unit outgoing light wavelength.
In some embodiments, the laser reflection layer is a bragg reflection layer formed by alternately laminating a first material layer and a second material layer
Preferably, the thicknesses of the first substance layer and the second substance layer are different depending on the number of layers. In some embodiments, the thickness of each of the first and second substance layers decreases with increasing number of layers. In some embodiments, the thickness of each of the first and second substance layers increases with the number of layers. In some embodiments, the thickness of the first and second substance layers varies randomly with the number of layers.
In some embodiments, the number of bragg reflective layers is greater than 3 and less than 61.
In some embodiments, the number of pairs of Bragg reflecting layers is n, wherein the thickness of the first material layer of the first pair is D1, the thickness of the first material layer of the second and third pairs is (75% to 90%) D1, the thickness of each layer of the first material layer of the fourth to n/2 pairs is (30% to 50%) D1, and the thickness of each layer of the first material layer of the n/2+1 to n pairs is (20% to 30%) D1, wherein n ≧ 8.
In some embodiments, the number of pairs of Bragg reflectors is n, wherein the thickness of the second material layer of the first pair is D2, the thickness of the second material layer of the second and third pairs is (75% to 90%) D2, the thickness of each of the first material layers of the fourth to n/2 pairs is (30% to 50%) D11, and the thickness of each of the first material layers of the n/2+1 to n pairs is (20% to 30%) D2, wherein n is greater than or equal to 8.
Compared with the prior art, the manufacturing method of the light-emitting diode chip provided by the invention has the following advantages:
1. because the outer surface of the LED unit functional area forms a laser reflection layer with the capability of reflecting laser wavelength, when laser cutting is carried out and laser beams are irradiated on the side wall of the LED unit, the laser reflection layer reflects the laser irradiated on the LED unit, so that the laser beams can not influence the epitaxial structure of the LED unit in the cutting process, and the LED chip can not cause the defects of electric leakage and the like due to the damage of the epitaxial structure.
2. Through the matching of the size of the reflecting layer and the laser beam, the problems of edge breakage and corner chipping of the cutting edge of the LED chip are not easy to occur in the process of cutting the mini-LED and the micro-LED, and the LED chip with the cutting edge close to the vertical direction can be prepared.
3. Through the matching of the size of the reflecting layer and the laser beam, the width design of the cutting channel can be minimized, and therefore the chip number output of a single LED wafer is increased.
Drawings
Fig. 1 shows a schematic cross-sectional view of an LED wafer.
Fig. 2 shows a schematic diagram after forming a laser reflecting layer on the side wall of the LED unit.
Fig. 3 shows a schematic diagram after forming a laser reflecting layer on the side walls of a single LED unit.
Fig. 4 is a schematic diagram illustrating a flip-chip structure of the light emitting diode chip after a chip reflective layer and a laser reflective layer are formed on sidewalls of the light emitting diode chip.
Fig. 5 is a schematic diagram illustrating a front-mounted led chip after a chip reflective layer and a laser reflective layer are formed on sidewalls of the led chip.
Fig. 6 is a graph showing the relationship between the reflectance of the bragg reflective layer for each wavelength band.
Detailed Description
To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The invention will now be further described with reference to the accompanying drawings and detailed description.
Example 1
The present embodiment provides a method for manufacturing a light emitting diode chip, which includes the following steps:
(1) an LED wafer (wafer) and a laser are provided, the LED wafer includes a substrate 10 and a plurality of LED units 20 on the substrate, and a scribe line 30 is formed between two adjacent LED units 20.
Each LED unit includes an epitaxial structure 21 formed on a substrate by an epitaxial process and an electrode 22 formed on the epitaxial structure by a chip process. The substrate may be a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, or the like. In this embodiment, the substrate is a sapphire substrate, the epitaxial structure is formed on a c-plane of the sapphire substrate, and the c-plane of the sapphire substrate is defined as a front surface and the opposite other surface is defined as a back surface.
Referring to fig. 1, fig. 1 is a schematic cross-sectional structure diagram of an LED wafer in this embodiment. The epitaxial structure includes at least a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially stacked on a front surface of a substrate. For example, the first conductive type semiconductor layer in this embodiment is an N-type GaN layer, the active layer is a GaN-based mqw layer, and the second conductive type semiconductor layer is a P-type GaN layer. The N-type gallium nitride layer, the multi-quantum well layer and the P-type gallium nitride layer are basic constituent units of an epitaxial structure of the LED chip, and on the basis, the epitaxial structure can further comprise other functional structure layers with an optimization effect on the performance of the LED chip. The epitaxial structure may be formed on the substrate by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), epitaxial Growth (epitaxial Growth Technology), Atomic beam Deposition (ALD), and the like.
In the chip process, at least a P electrode and an N electrode are formed on the epitaxial structure, and a scribe line 30 is etched. Since the specific process of completing the chip process on the epitaxial structure to obtain a plurality of LED units is well known to those skilled in the art, the details of the process are not described herein. On the basis, the chip manufacturing process can also form a functional structure layer with an optimization effect on the performance of the LED chip on the epitaxial structure, such as a current expansion layer, a Bragg reflection layer (DBR) and the like.
(2) Referring to fig. 2, a laser reflecting layer 23 having a reflecting power to a laser wavelength is formed on an outer surface of the LED unit 20. The laser reflection layer 23 may be a bragg reflection layer (DBR), a photonic crystal (PhCs) reflection layer, or a hybrid reflection layer structure of both the bragg reflection layer and the photonic crystal reflection layer (DBR/PhCs) designed for the laser wavelength, and the laser reflection layer 23 covers at least the sidewall regions of the LED unit 20 at the edges of the scribe lines 30. The laser reflection layer 23 may be formed on the outer surface of the LED unit using a technique such as electron beam evaporation or ion beam sputtering.
(3) And carrying out laser cutting and splitting along the cutting path to obtain the light-emitting diode chip.
When laser cutting is performed, since the laser reflection layer 23 having a reflection capability for laser wavelength is disposed on the outer surface of the functional region of the LED unit 20, and the scribe line 30 does not have the laser reflection layer structure, when a laser beam is irradiated on the side wall of the LED unit 20, the laser reflection layer 23 reflects the laser irradiated on the LED unit 20, so that the laser beam is only applied to the scribe line 30 to perform cutting, and the epitaxial structure of the LED unit 20 is not affected, and thus the LED chip does not have defects such as electric leakage due to damage of the epitaxial structure. And through the matching of the reflecting layer 23 and the size of the laser beam, the problems of edge breakage and corner chipping of the cut edge of the LED chip are not easy to occur in the process of cutting the mini-LED and the micro-LED, and the LED chip with the cut edge close to vertical can be manufactured. In addition, the width of the scribe line can be designed to be minimized by matching the size of the laser beam with the reflective layer 23, thereby increasing the chip yield of a single LED wafer.
In this embodiment, the laser reflection layer 23 is a DBR reflection layer having a reflectivity of 80% or more with respect to a laser beam, and more preferably, the DBR reflection layer is formed by alternately stacking n pairs of high refractive index material and low refractive index material, wherein the high refractive index material may be TiO2、NB2O5、TA2O5、HfO2、ZrO2Etc.; the low refractive material may be SiO2、MgF2、Al2O5SiON, SiN, and the like. It is to be understood that, here,the laser cutting can be laser tangent to the substrate along the cutting path from the epitaxial side by using laser; the laser recessing mode can also be adopted, namely laser beams are emitted from the epitaxial side and focused in the substrate for recessing, and because the outer surface of the functional region of the LED unit is provided with a laser reflection layer with the reflection capability to laser wavelength, the laser beams can not influence the epitaxial structure of the LED unit during the laser recessing.
Example 2
Referring to fig. 3, the difference between this embodiment and embodiment 1 is that the laser reflection layer 23 covers the edge area of the top surface of the LED unit 20, in addition to the sidewall areas of the LED unit 20 at the edge of the scribe line 30. The top surface of the LED unit 20 is here the surface of the epitaxial structure on the side facing away from the substrate. During laser cutting, when the laser beam is larger than the width of the cutting track or the alignment deviation causes the laser beam to irradiate on the edge area of the top surface of the LED unit 20, the laser reflection layer 23 on the edge area of the top surface of the LED unit 20 also reflects the laser irradiated on the LED unit 20, so that the laser beam does not affect the chip structure of the LED unit 20 during the cutting process, and the performance of the manufactured light emitting diode chip is ensured.
Example 3
The difference between this embodiment and embodiment 1 is that the laser reflection layer 23 only reflects laser light for the laser wavelength, for example, the light emitted from the led chip is blue light (445 to 475nm) or green light (510 to 535nm), the laser is a fiber laser, the laser wavelength is infrared light (940 to 1100nm), and the laser reflection layer 23 only reflects the light of the laser wavelength (infrared light), but does not reflect the blue light or the green light, so the light emission of the led chip is not affected. For example, the laser reflection layer 23 covers the side wall area of the light emitting diode chip of the front mounting structure, and in the laser cutting process, the laser reflection layer 23 reflects laser beams to protect the chip structure; when the led chip is in operation, the laser reflection layer 23 does not block the light (blue light or green light) emitted from the led chip, so that the led chip can still have a large light emitting angle.
Example 4
Referring to fig. 4, the present embodiment is different from embodiment 1 in that the LED chip obtained by cutting the LED wafer is a flip-chip LED chip, i.e., the light of the LED chip is emitted from the substrate side.
The side wall area of the light emitting diode chip and other areas of the top surface of the light emitting diode chip except the electrodes are provided with a chip reflection layer 24 which has reflection capability on the wavelength of the emergent light of the light emitting diode chip, and the chip reflection layer 24 can improve the light emitting efficiency of the light emitting diode chip. And the laser reflecting layer 23 is covered on the chip reflecting layer 24. The laser reflecting layer 23 is formed on the chip reflecting layer 24, and the chip reflecting layer 24 and the laser reflecting layer 23 can share one set of mask in the process, so that the purposes of saving the cost and shortening the process time are achieved.
Example 5
Referring to fig. 5, the present embodiment is different from embodiment 1 in that the LED chip obtained by cutting the LED wafer is a light emitting diode chip with a front-mounted structure, that is, light of the light emitting diode chip is emitted from the electrode side.
The side wall area of the light emitting diode chip is provided with a chip reflection layer 24 which has reflection capability on the wavelength of the emergent light of the light emitting diode chip, and the chip reflection layer 24 can improve the light emitting efficiency of the light emitting diode chip. And the laser reflecting layer 23 is covered on the chip reflecting layer 24. The laser reflecting layer 23 is formed on the chip reflecting layer 24, and the chip reflecting layer 24 and the laser reflecting layer 23 can share one set of mask in the process, so that the purposes of saving the cost and shortening the process time are achieved.
Example 6
The difference between this embodiment and embodiment 1 is that the laser reflective layer 23 not only has a reflective capability for the wavelength of the laser light, but also has a reflective capability for the wavelength of the light emitted from the led chip, so that the laser reflective layer 23 also has the function of the chip reflective layer in embodiments 4 and 5, but the laser reflective layer 23 can be completed by one process.
In this embodiment, the laser light is reflectedThe radiation layer 23 is preferably a bragg reflection layer formed by alternately stacking a first material layer and a second material layer, and the thickness of the first material layer and the second material layer is different depending on the number of layers. Wherein the first material layer and the second material layer may be made of SiO2、TiO2、HfO2,ZnO2,ZrO2,Cu2O3And the like. Specifically, the number of pairs of the laser reflection layers 23 is n, and the thickness of each material layer can be set as follows: the thickness of the first material layer of the first pair is D1, the thickness of the first material layer of the second and third pairs is (75% -90%) D1, the thickness of each layer of the first material layer of the fourth to n/2 pairs is (30% -50%) D1, the thickness of each layer of the first material layer of the n/2+1 to n pairs is (20% -30%) D1, the thickness of the second material layer of the first pair is D2, the thickness of each layer of the second and third pairs is (75% -90%) D2, the thickness of each layer of the first material layer of the fourth to n/2 pairs is (30% -50%) D11, and the thickness of each layer of the first material layer of the n/2+1 to n pairs is (20% -30%) D2, wherein n is more than or equal to 8. By such a design, the laser reflection layer 23 can highly reflect the laser beam for substrate cutting and the light emitted from the LED chip at the same time.
In this embodiment, the first material layer and the second material layer in the Bragg reflection layer are made of SiO2And TiO2The bragg reflector layer was prepared by way of example and had a total of 24 layers (12 pairs), and the materials and thicknesses of the layers were as follows:
Figure BDA0002961334000000091
fig. 6 shows a relationship diagram of the reflectivity of the bragg reflective layer for each wavelength band, and it can be seen from fig. 6 that the bragg reflective layer has good reflectivity (greater than 90%) for wavelengths of 440 to 590nm and 900 to 1100nm, so that the bragg reflective layer has good reflectivity for the outgoing light (blue light and green light) of the led chip and the laser wavelength, and has the reflectivity for the laser wavelength and the outgoing light wavelength of the led chip. Although the first material layer and the second material layer are reduced with the increase of the number of layers in the embodiment, the invention is not limited thereto, and the thicknesses of the first material layer and the second material layer may also be increased with the increase of the number of layers; or the thickness of the first material layer and the second material layer varies randomly with the number of layers.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (22)

1. A manufacturing method of a light emitting diode chip is characterized by comprising the following process steps:
(1) providing an LED wafer and a laser, wherein the LED wafer comprises a substrate and a plurality of LED units positioned on the substrate, and a cutting channel is arranged between every two adjacent LED units;
(2) forming a laser reflection layer which has the reflection capability to the laser wavelength of the laser on the outer surface of the LED unit, wherein the laser reflection layer at least covers the side wall area of the LED unit at the edge of the cutting street;
(3) and performing laser tangent along the cutting path or performing laser stealth cutting by laser beams incident from the LED unit side to obtain the LED chip.
2. The method of manufacturing according to claim 1, wherein: the reflectivity of the laser reflection layer to the laser wavelength of the laser is more than 80%.
3. The method of manufacturing according to claim 1, wherein: the laser reflection layer comprises a Bragg reflection layer designed for the laser wavelength of the laser, a photonic crystal reflection layer or a reflection layer structure in which the Bragg reflection layer and the photonic crystal reflection layer are mixed.
4. The method of manufacturing according to claim 1, wherein: the laser reflecting layer is formed on the outer surface of the LED unit by adopting an electron beam evaporation or ion beam sputtering technology.
5. The method of manufacturing according to claim 1, wherein: the laser reflecting layer also covers the edge area of the top surface of one side of the LED unit, which is far away from the substrate.
6. The method of manufacturing according to claim 1, wherein: the outer surface of the LED unit is provided with a chip reflecting layer capable of reflecting the wavelength of the emergent light of the LED unit, and the laser reflecting layer is formed on the chip reflecting layer.
7. The method of manufacturing according to claim 1, wherein: the laser reflecting layer has the reflecting capacity for the wavelength of light emitted by the LED unit.
8. The method of manufacturing according to claim 7, wherein: the laser reflection layer includes a Bragg reflection layer formed by alternately laminating a first material layer and a second material layer.
9. The method of manufacturing according to claim 8, wherein: the thicknesses of the first material layer and the second material layer are reduced along with the increase of the number of layers.
10. The method of manufacturing according to claim 8, wherein: the thicknesses of the first material layer and the second material layer are increased along with the increase of the number of layers.
11. The method of manufacturing according to claim 8, wherein: the thicknesses of the first material layer and the second material layer are randomly changed along with the number of layers.
12. The method of manufacturing according to claim 8, wherein: the number of the Bragg reflection layers is more than 3 and less than 61.
13. A light emitting diode chip, comprising: the laser cutting device comprises a substrate and an epitaxial structure positioned on the substrate, wherein a laser reflecting layer is arranged on the side surface of the epitaxial structure, and the laser reflecting layer has the reflecting capacity on a laser beam for cutting the substrate.
14. The light-emitting diode chip of claim 13, wherein: the reflectivity of the laser reflection layer to the laser beam is more than 80%.
15. The light-emitting diode chip of claim 13, wherein: the wavelength of the laser beam for cutting the substrate is 1064 +/-100 nm.
16. The light-emitting diode chip of claim 13, wherein: the laser reflection layer is a Bragg reflection layer, a photonic crystal reflection layer or a reflection layer structure formed by mixing the Bragg reflection layer and the photonic crystal reflection layer, which is designed for the laser beam.
17. The light-emitting diode chip of claim 13, wherein: the laser reflection layer also covers the top surface edge area of one side of the epitaxial structure, which is far away from the substrate.
18. The light-emitting diode chip of claim 13, wherein: a chip reflecting layer is arranged on the outer surface of the epitaxial structure, the chip reflecting layer has reflecting capacity on light emitted by the LED chip, and the laser reflecting layer is formed on the chip reflecting layer.
19. The light-emitting diode chip of claim 13, wherein: the laser reflection layer has reflection capability on the wavelength of emergent light of the epitaxial structure.
20. The light-emitting diode chip of claim 19, wherein: the laser reflection layer includes a Bragg reflection layer formed by alternately laminating a first material layer and a second material layer.
21. The light-emitting diode chip of claim 20, wherein: the thicknesses of the first material layer and the second material layer are reduced along with the increase of the number of layers.
22. The light-emitting diode chip of claim 21, wherein: the thicknesses of the first material layer and the second material layer are increased along with the increase of the number of layers.
CN202080004935.0A 2020-04-10 2020-05-06 Light emitting diode chip and manufacturing method thereof Pending CN112840467A (en)

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CN104078534A (en) * 2013-03-27 2014-10-01 上海蓝光科技有限公司 Front cutting technology of light emitting diode
US20150214439A1 (en) * 2014-01-27 2015-07-30 Glo Ab Led device with bragg reflector and method of singulating led wafer substrates into dice with same
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WO2023138203A1 (en) * 2022-01-21 2023-07-27 长鑫存储技术有限公司 Processing method for chip, and pre-bonded wafer structure

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