CN112838114A - Display screen, manufacturing method of display screen and semiconductor circuit, and electronic device - Google Patents
Display screen, manufacturing method of display screen and semiconductor circuit, and electronic device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 9
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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Abstract
The application discloses display screen, display screen and semiconductor circuit's preparation method, electronic equipment, the display screen includes: the substrate comprises a first plate surface and a second plate surface which are oppositely arranged; the first display layer group is arranged on the first plate surface; the second display layer group is arranged on the second plate surface; and the light shielding layer is arranged between the first plate surface and the first display layer group, and/or the light shielding layer is arranged between the second plate surface and the second display layer group. This application is through processing the demonstration layer group respectively in the relative both sides of same base plate, on the basis of guaranteeing display screen display effect, has effectively reduced the volume and the weight of display screen.
Description
Technical Field
The application belongs to the technical field of display screen processing, and particularly relates to a display screen, a preparation method of the display screen, a preparation method of a semiconductor circuit and electronic equipment.
Background
Based on the wide requirements of all current industries on information interaction, data sharing, service experience and the like, the double-sided display screen is produced. Such as: the method comprises the following steps of carrying out omnibearing synchronous or asynchronous display on live sports events, government and government affair windows, financial industry windows, traffic guide instructions, large-scale exhibition information publishing, medical institution information display, bilateral or multilateral meeting negotiation, large-scale electronic advertisements in public places and the like. Therefore, the dual-sided display is increasingly widely applied to various application scenarios.
In general, a dual-sided display refers to a new type of display device having two display surfaces, which can be simply classified into two types based on its structure. One is that two independent display screens are directly fixed together back to back, and then functions such as synchronous parallel interaction of double screens and double-screen asynchronous display are realized through external signal control. And the spliced screen can be derived by further rotating and adjusting the main screen and the auxiliary screen. And the second is that the two sides of the display panel in the display are respectively designed and processed, so that double-sided display is realized on the basis of one display screen.
No matter through two display screen tiled display, or through a display screen double-sided demonstration, exist throughout among the correlation technique not enough are: the double-sided display screen is large in size and weight.
Disclosure of Invention
The present application is directed to a display panel, a method of manufacturing a semiconductor circuit, and an electronic device, which solve at least one of the above problems in the related art.
In order to solve the technical problem, the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a display screen, including: the substrate comprises a first plate surface and a second plate surface which are oppositely arranged; the first display layer group is arranged on the first plate surface; the second display layer group is arranged on the second plate surface; and the light shielding layer is arranged between the first plate surface and the first display layer group, and/or the light shielding layer is arranged between the second plate surface and the second display layer group.
In a second aspect, an embodiment of the present application provides a method for manufacturing a display screen, including: etching the first circuit layer on the first plate surface of the substrate, and etching the second circuit layer on the second plate surface of the substrate; a first light emitting layer and a first encapsulation layer are applied to the first circuit layer and a second light emitting layer and a second encapsulation layer are applied to the second circuit layer.
In a third aspect, an embodiment of the present application provides a method for manufacturing a semiconductor circuit, including: forming a first buffer layer on the first plate surface of the substrate, and forming a second buffer layer on the second plate surface of the substrate; forming a first gate electrode on the first buffer layer and a second gate electrode on the second buffer layer; forming a first gate insulating layer to cover the first gate electrode and a second gate insulating layer to cover the second gate electrode; forming a first semiconductor layer on the first gate insulating layer and a second semiconductor layer on the second gate insulating layer; forming a first polycrystalline silicon layer on the first semiconductor layer, and forming a second polycrystalline silicon layer on the second semiconductor layer; forming a first source drain electrode on the first semiconductor layer, and forming a second source drain electrode on the second semiconductor layer; forming a first flat layer on the first semiconductor layer, and forming a second flat layer on the second semiconductor layer; patterning the first planarization layer to expose the first source and drain electrodes, and patterning the second planarization layer to expose the second source and drain electrodes; a first pixel defining layer is formed on the first flat layer, and a second pixel defining layer is formed on the second flat layer.
In a fourth aspect, an embodiment of the present application provides an electronic device, including: the display screen is the display screen according to any embodiment of the application, or the display screen is the display screen obtained by the preparation method of the display screen according to any embodiment of the application.
In the embodiment of the application, the first display layer group and the second display layer group are formed on two opposite surfaces of the same substrate by processing the first display layer group on the first surface of the substrate and processing the second display layer group on the second surface of the substrate. Thus, the embodiment of the application can manufacture the display screen with double-sided display by one substrate. Therefore, the embodiment of the application effectively reduces the volume and the weight of the display screen on the basis of ensuring the display effect of the double-sided display screen.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a display screen in the related art;
FIG. 2 is a schematic cross-sectional view of a display screen in the related art;
FIG. 3 is a schematic diagram of a display screen according to some embodiments of the present application;
FIG. 4 is a schematic illustration of a processing sequence for a display screen according to some embodiments of the present application;
FIG. 5 is a block diagram schematic of the structure of an electronic device of some embodiments of the present application;
FIG. 6 is one of the cross-sectional schematic views of a display screen of some embodiments of the present application;
FIG. 7 is a second schematic cross-sectional view of a display screen according to some embodiments of the present application;
FIG. 8 is a third schematic cross-sectional view of a display screen according to some embodiments of the present application;
FIG. 9 is a flowchart illustrating steps in a method of fabricating a display panel according to some embodiments of the present application;
FIG. 10 is a second flowchart illustrating steps of a method for manufacturing a display panel according to some embodiments of the present disclosure;
FIG. 11 is a third flowchart illustrating a method of fabricating a display panel according to some embodiments of the present application;
fig. 12 is a flow chart of steps in a method of fabricating a semiconductor circuit according to some embodiments of the present application.
Wherein, the correspondence between the reference numbers and the component names in fig. 1 and fig. 2 is:
600': display screen, 610': substrate, 612': circuit layer, 614': light-emitting layer, 616': and (7) packaging the layer.
The correspondence between the reference numerals and the names of the components in fig. 3 to 8 is:
100: electronic device, 200: display screen, 210: substrate, 212: first board surface, 214: second board surface, 220: first display layer group, 222: first circuit layer, 224: first light-emitting layer, 226: first encapsulation layer, 228: first color point location, 230: second display layer group, 232: second circuit layer, 234: second light-emitting layer, 236: second encapsulation layer, 238: second color point, 240: first light-shielding layer, 250: second light-shielding layer, 260: light-shielding layer, 402: first insulating layer, 404: first barrier layer, 406: second insulating layer, 408: second barrier layer, 410: first buffer layer, 412: first gate insulating layer, 414: second gate insulating layer, 416: first inorganic insulating layer, 418: first planar layer, 420: first pixel definition layer, 422: first polysilicon layer, 424: first gate, 426: second gate, 428: first source drain, 430: second source drain, 432: first active display area, 434: first gate array, 436: first anode, 502: third insulating layer, 504: third barrier layer, 506: fourth insulating layer, 508: fourth barrier layer, 510: second buffer layer, 512: third gate insulating layer, 514: fourth gate insulating layer, 516: second inorganic insulating layer, 518: second flat layer, 520: second pixel definition layer, 522: second polysilicon layer, 524: third gate, 526: fourth gate, 528: third source drain, 530: fourth source drain, 532: second active display area, 534: second grid array, 536: a second anode.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The features of the terms first and second in the description and in the claims of the present application may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality" means two or more unless otherwise specified. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
As shown in fig. 1 and 2, for a display screen 600' of a single-sided display in the related art, it generally includes the following structure: a substrate 610 ', a circuit layer 612 ' disposed over the substrate 610 ', a light-emitting layer 614 ' disposed over the circuit layer 612 ', and an encapsulation layer 616 ' disposed over the light-emitting layer 614 '.
In order to realize a double-sided display, the related art usually directly joins the two display panels 600 'in a front-to-back manner, or processes the two substrates 610' together after processing the circuit layer 612 ', the light emitting layer 614', and the encapsulation layer 616 'on the two substrates 610', respectively.
Therefore, the display screen implementing the double-sided display in the related art has problems of heavy weight and relatively large volume.
In order to effectively reduce the volume and weight of the display screen on the basis of realizing the double-sided display, the embodiment of the application provides the following display screen 200, a manufacturing method of the display screen, a manufacturing method of a semiconductor circuit, and an electronic device 100.
The display panel 200, the manufacturing method of the display panel, the manufacturing method of the semiconductor circuit, and the electronic apparatus 100 according to the embodiment of the present application are described below with reference to fig. 3 to 12.
As shown in fig. 3 and 6, a display screen 200 according to some embodiments of the present application includes: a substrate 210, a first display layer group 220, a second display layer group 230, and a light-shielding layer 260. The substrate 210 includes a first plate surface 212 and a second plate surface 214 disposed opposite to each other. The first display layer group 220, the first display layer group 220 is disposed on the first plate surface 212. And a second display layer group 230, wherein the second display layer group 230 is disposed on the second plate surface 214. The light-shielding layer 260 is disposed between the first plate surface 212 and the first display layer group 220, and/or the light-shielding layer 260 is disposed between the second plate surface 214 and the second display layer group 230.
As shown in fig. 5, the display screen 200 of the embodiment of the present application is used in cooperation with the electronic device 100, and is used as an output device of the electronic device 100 for displaying an operation interface, an image or a video of the electronic device 100. The display screen 200 of the embodiment of the application is specifically a Light Emitting Diode (LED) display screen.
As shown in fig. 4, in order to realize a double-sided display, the embodiment of the present application is implemented on two opposite sides of the substrate 210, that is: a first display layer group 220 and a second display layer group 230 are respectively processed on the first plate surface 212 and the second plate surface 214. The first display layer group 220 includes a first circuit layer 222, a first light emitting layer 224, and a first encapsulation layer 226, respectively. The second display layer group 230 includes a second circuit layer 232, a second light emitting layer 234, and a second encapsulation layer 236, respectively.
In the display screen 200 of the embodiment of the present application, the first display layer group 220 and the second display layer group 230 are respectively disposed on two sides of the same substrate 210. Therefore, the embodiment of the application can realize synchronous display or asynchronous display of the integrated double-sided display screen, and effectively solves the problems of large volume, heavy weight and high cost of the double-sided display formed by mechanically splicing two displays or two substrates in the related technology. In summary, the embodiment of the present application effectively reduces the volume and the weight of the display screen 200, and particularly reduces the thickness of the display screen 200. The display screen 200 having excellent display quality, being light, thin, portable, and occupying a small space can be obtained.
The light shielding layer 260 may be applied by coating, brushing, spraying, printing, or the like, so as to improve the display effect of the display panel 200 according to the embodiment of the present disclosure and reduce the power consumption of the display panel 200.
As shown in fig. 6, in some embodiments of the examples of the present application, the light-shielding layer 260 includes: the first light-shielding layer 240. The first light shielding layer 240 is disposed between the first plate surface 212 and the first display layer group 220. In some embodiments of the examples of the present application, the light-shielding layer 260 includes: and a second light-shielding layer 250. The second light shielding layer 250 is disposed between the second plate surface 214 and the second display layer group 230.
Specifically, unlike the way of performing light leakage prevention processing on a Black Matrix (BM) of a Liquid Crystal Display (LCD) in the related art, when the Display panel 200 of the embodiment of the application uses a light emitting diode to realize Display, the light emitting diode has a self-light emitting effect, and the light transmittance of the panel is high. Light emitted from the first display layer group 220 may enter the second display layer group 230, and light emitted from the second display layer group 230 may enter the first display layer group 220. The above phenomenon may cause picture overlap. In addition, the polysilicon in the first and/or second light shielding layers 240 and 250 absorbs light and generates a photo-generated current. This problem may cause an increase in leakage current of the first encapsulating layer 226 and/or the second encapsulating layer 236, and may cause an abnormal screen display effect and an increase in power consumption.
Therefore, in order to prevent the light emitted from the first display layer group 220 from entering the second display layer group 230 or prevent the light emitted from the second display layer group 230 from entering the first display layer group 220, in some embodiments of the present application, the first light shielding layer 240 and/or the second light shielding layer 250 are used to perform light shielding processing, so that the polysilicon is prevented from absorbing light too much, and the power consumption of the display panel 200 is reduced.
As shown in fig. 4 and 6, in some embodiments of the examples of the present application, the first display layer group 220 includes a first circuit layer 222 and a first light emitting layer 224, and the first circuit layer 222 is disposed between the first light emitting layer 224 and the substrate 210. The second display layer group 230 includes a second circuit layer 232 and a second light emitting layer 234, and the second circuit layer 232 is disposed between the second light emitting layer 234 and the substrate 210.
In this embodiment, the first display layer group 220 and the second display layer group 230 are provided in mirror symmetry with each other in structure. The first circuit layer 222 and the second circuit layer 232 are semiconductor circuits, respectively. The first light-emitting layer 224 and the second light-emitting layer 234 respectively include photoluminescent phosphors, and the photoluminescent phosphors emit light when excited by electric power after the semiconductor circuit is powered on.
The first color-development site 228 over the first light-emitting layer 224 and the second color-development site 238 over the second light-emitting layer 234 can emit any one of red light, green light, and blue light depending on the phosphor composition. The first light emitting layer 224 composed of the arrangement of the plurality of first color-rendering points 228 of the above three colors displays a pattern under the control of the first circuit layer 222. The second light emitting layer 234 composed of the arrangement of the plurality of second color-rendering sites 238 of the above three colors can display a pattern under the control of the second circuit layer 232. Therefore, the display screen 200 of the embodiment of the present application can implement a double-sided display function.
As shown in fig. 4, in some embodiments of the present embodiment, the first display layer group 220 further includes a first encapsulation layer 226, and the first encapsulation layer 226 is disposed in a direction of the first light emitting layer 224 away from the first circuit layer 222. In some embodiments of the present embodiment, the second display layer group 230 further includes a second encapsulation layer 236, and the second encapsulation layer 236 is disposed in a direction of the second light emitting layer 234 facing away from the second circuit layer 232.
The first and second encapsulation layers 226 and 236 are Thin Film Transistors (TFTs), respectively. The first encapsulation layer 226 is used to encapsulate the first light emitting layer 224, and the second encapsulation layer 236 is used to encapsulate the second light emitting layer 234.
In some embodiments of the present embodiment, the circuit pattern of the first circuit layer 222 and the circuit pattern of the second circuit layer 232 are symmetrically disposed. The circuit pattern of the first circuit layer 222 and the circuit pattern of the second circuit layer 232 may be the same or different. The circuit patterns of the first circuit layer 222 and the second circuit layer 232 are symmetrically arranged, so that the first circuit layer 222 and the second circuit layer 232 can be etched conveniently, the definition of the display screen 200 in double-sided display can be improved, and the display effect is improved.
As shown in fig. 6 and 7, the structure of the first circuit layer 222 is specifically as follows. The first circuit layer 222 includes, from a side close to the first board surface 212 to a side far from the first board surface 212: a first insulating layer 402, a first barrier layer 404, a second insulating layer 406, a second barrier layer 408, a first buffer layer 410, a first gate insulating layer 412, a second gate insulating layer 414, a first inorganic insulating layer 416, a first planarization layer 418, and a first pixel defining layer 420. A first polysilicon layer 422 is formed on the first buffer layer 410, and the first gate insulating layer 412 covers at least a portion of the first polysilicon layer 422. The first circuit layer 222 further includes a first gate 424, a second gate 426, a first source/drain 428, and a second source/drain 430. A first anode 436 is disposed on the first pixel defining layer 420. The first effective display area 432 and the first gate array 434 of the first circuit layer 222 are also shown in fig. 7.
As shown in fig. 6 and 8, the structure of the second circuit layer 232 is specifically as follows. The second circuit layer 232 is formed by a side close to the second board surface 214 and a side far away from the second board surface 214, and respectively includes: a third insulating layer 502, a third barrier layer 504, a fourth insulating layer 506, a fourth barrier layer 508, a second buffer layer 510, a third gate insulating layer 512, a fourth gate insulating layer 514, a second inorganic insulating layer 516, a second planarization layer 518, and a second pixel defining layer 520. A second polysilicon layer 522 is formed on the second buffer layer 510, and the third gate insulating layer 512 covers at least a portion of the second polysilicon layer 522. The second circuit layer 232 further includes a third gate 524, a fourth gate 526, a third source drain 528 and a fourth source drain 530. A second anode 536 is disposed on the second pixel defining layer 520. The second effective display area 532 and the second gate array 534 of the second circuit layer 232 are also shown in fig. 8.
In some embodiments of the present embodiment, the first light emitting layer 224 includes a plurality of first color-rendering points 228, the second light emitting layer 234 includes a plurality of second color-rendering points 238, and the plurality of first color-rendering points 228 and the plurality of second color-rendering points 238 are arranged in the same manner.
Specifically, the first light-emitting layer 224 is composed of a plurality of first color-development sites 228 arranged in an array. The second light emitting layer 234 is composed of a plurality of second color-development sites 238 arranged in an array. The first color point 228 and the second color point 238 are filled or coated with photoluminescent phosphor, respectively. Wherein, the color-rendering points of red, green and blue are arranged at intervals to realize the color display of the display screen 200. The same arrangement of the first color-rendering points 228 and the second color-rendering points 238 means: taking the color of any one of the first color dots 228 as red, the color of the color dot that is symmetrical with respect to the color dot among the second color dots 238 is the same as red. In other words, the colors of the symmetrical color-rendering sites on the first light-emitting layer 224 and the second light-emitting layer 234 are the same. The arrangement of the first color-rendering points 228 and the second color-rendering points 238 is the same, so that the definition of the display screen 200 can be further improved, and the production and processing efficiency can be improved.
In some embodiments of the present examples, the first light emitting layer 224 includes an organic light emitting diode. In some embodiments of the present examples, the second light emitting layer 234 includes an organic light emitting diode.
The display panel 200 of the present embodiment is an Organic Light Emitting Diode (OLED) display panel. Wherein. The display screen 200 of the embodiment of the application may specifically be one of the following: an Active-Matrix Organic Light Emitting Diode (AMOLED) display screen, a Quantum Dot Light Emitting Diode (QLED) display screen, and a Micro-Organic Light Emitting Diode (MOLED) display screen.
For the liquid crystal display panel in the related art, the weight and volume thereof are large. In addition, the viewing angle of the liquid crystal display screen is small due to the inherent optical characteristics of the liquid crystal molecules, and the viewing angle needs to be adjusted. Compared with a liquid crystal display screen, the display screen 200 of the embodiment of the application adopts an organic light emitting diode display screen, and the self-luminous property of the organic light emitting diode is utilized, so that the display screen 200 of the embodiment of the application has more excellent definition, larger screen visual angle and higher display quality.
As shown in fig. 9, a method of manufacturing a display screen according to some embodiments of the present application includes:
step S102, etching a first circuit layer on a first plate surface of a substrate, and etching a second circuit layer on a second plate surface of the substrate;
step S104, a first light emitting layer and a first encapsulation layer are applied to the first circuit layer, and a second light emitting layer and a second encapsulation layer are applied to the second circuit layer.
Specifically, the substrate 210 is made of glass, and in the embodiment of the present application, the first plate surface 212 and the second plate surface 214 of the substrate 210 are processed separately. The processing of the substrate 210 in the embodiment of the present application mainly includes two process stages. The first process stage is the processing stage of the Array circuit portion (also known as the Array processing stage). The second process stage is the processing stage for the electroluminescent portion and the Thin Film Encapsulation portion (also known as the EL/TFE processing stage, i.e., Electro-Luminescence/Thin Film Encapsulation processing stage).
In the processing stage of the array circuit part, the embodiment of the present application prepares a circuit pattern on the surface of the cleaned substrate 210 through exposure, development, etching, and the like. In the embodiment of the present application, the robot may reverse the substrate to process both sides of the first plate surface 212 and the second plate surface 214 of the substrate 210.
After the processing of the array circuit part is completed, the processing of the electroluminescent part and the thin film encapsulation part is entered. The first light-emitting layer 224 and the second light-emitting layer 234 are respectively prepared by a vacuum evaporation method under the cover of a metal mask plate.
Through the steps, the embodiment of the application can obtain the display screen 200 which is high in definition, good in color development effect, small in size and light in weight.
In some embodiments of the present application, etching the first circuit layer 222 on the first board surface 212 of the substrate 210 and etching the second circuit layer 232 on the second board surface 214 of the substrate 210 specifically includes: the first circuit layer 222 and the second circuit layer 232 are alternately etched. The alternate etching mode is convenient for the operation of the mechanical arm and can improve the efficiency of production and processing.
As shown in fig. 10, in some embodiments of the present application, the etching the first circuit layer and the second circuit layer alternately includes:
step S202, etching the first circuit layer through a first process;
step S204, etching the second circuit layer through the second procedure based on the completion of the first procedure;
in step S206, the first circuit layer is etched through the third process after the second process is completed.
The first step is performed in the same manner as the second step, and the third step is performed as a subsequent step adjacent to the first step.
In order to complete the etching of the array circuit portion in the assembly line at one time and avoid the influence of the subsequent processes (e.g., thermal treatment or annealing) on the previous processes, the embodiments of the present application complete the etching of the first circuit layer 222 and the second circuit layer 232 by using successive layer-by-layer and alternating etching.
As shown in fig. 11, in some embodiments of the examples of the present application, applying a first light emitting layer and a first encapsulation layer to a first circuit layer, and applying a second light emitting layer and a second encapsulation layer to a second circuit layer specifically includes:
step S302, sequentially applying a first light-emitting layer and a first packaging layer to a first circuit layer based on the completion of processing the first circuit layer and a second circuit layer;
step S304, based on the completion of the processing of the first light emitting layer and the first encapsulating layer, sequentially applying a second light emitting layer and a second encapsulating layer to the second circuit layer.
In the processing stages of the electroluminescent part and the thin film encapsulation part, during the evaporation of the photoluminescent materials of three primary colors, organic color molecules on one side of the substrate 210 may contaminate a portion on the other side of the substrate 210 that has not been evaporated, causing a problem of color mixing on the other side of the substrate 210. Therefore, in order to avoid the above problems, in the embodiments of the present application, in the processing stages of the electroluminescent portion and the thin film encapsulation portion, after the evaporation and encapsulation process on one side of the substrate 210 is completed, the evaporation and encapsulation process on the other side of the substrate 210 is performed. Through the steps, the embodiment of the application can improve the processing efficiency, ensure the processing quality, and obtain the display screen 200 with high definition and good color development effect.
In some embodiments of the present application, before performing the etching of the first circuit layer 222 on the first board surface 212 of the substrate 210 and the etching of the second circuit layer 232 on the second board surface 214 of the substrate 210, the preparation method further includes: a first light-shielding layer 240 is applied to the first plate surface 212.
In some embodiments of the present application, before performing the etching of the first circuit layer 222 on the first board surface 212 of the substrate 210 and the etching of the second circuit layer 232 on the second board surface 214 of the substrate 210, the preparation method further includes: a second light-shielding layer 250 is applied to the second plate surface 214.
In some embodiments of the present application, the first light-shielding layer 240 and/or the second light-shielding layer 250 are used to perform light-shielding processing, so that the polysilicon is prevented from absorbing light too much, thereby reducing power consumption of the display panel 200.
As shown in fig. 12, a method of manufacturing a semiconductor circuit according to some embodiments of the present application includes:
step S402, forming a first buffer layer on a first plate surface of the substrate, and forming a second buffer layer on a second plate surface of the substrate;
step S404, forming a first gate electrode on the first buffer layer and a second gate electrode on the second buffer layer;
step S406, forming a first gate insulating layer to cover the first gate electrode, and forming a second gate insulating layer to cover the second gate electrode;
step S408, forming a first semiconductor layer on the first gate insulating layer, and forming a second semiconductor layer on the second gate insulating layer;
step S410, forming a first polysilicon layer on the first semiconductor layer, and forming a second polysilicon layer on the second semiconductor layer;
step S412, forming a first source/drain on the first semiconductor layer, and forming a second source/drain on the second semiconductor layer;
step S414, forming a first planarization layer on the first semiconductor layer, and forming a second planarization layer on the second semiconductor layer;
step S416, patterning the first planarization layer to expose the first source/drain, and patterning the second planarization layer to expose the second source/drain;
in step S418, a first pixel definition layer is formed on the first flat layer, and a second pixel definition layer is formed on the second flat layer.
Through the above steps, embodiments of the present application may achieve successive layer-by-layer processing of both sides of the substrate 210, and thus alternately prepare the first circuit layer 222 and the second circuit layer 232. Therefore, the method for manufacturing a semiconductor circuit according to the embodiment of the present application is suitable for manufacturing a double-sided display panel, and can obtain the display panel 200 which is small in size, light in weight, and capable of double-sided display.
As shown in fig. 5, an electronic device 100 according to some embodiments of the present application includes: the display screen 200, the display screen 200 is the display screen 200 according to any embodiment of the present application, or the display screen 200 is the display screen 200 obtained by the method for manufacturing the display screen according to any embodiment of the present application. The electronic device 100 according to some embodiments of the present application has all the advantages of the display screen 200 according to any embodiment of the present application, and therefore, the description thereof is omitted here.
In the description herein, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.
Claims (13)
1. A display screen, comprising:
the substrate comprises a first plate surface and a second plate surface which are oppositely arranged;
the first display layer group is arranged on the first plate surface;
the second display layer group is arranged on the second plate surface;
and the light shielding layer is arranged between the first plate surface and the first display layer group, and/or the light shielding layer is arranged between the second plate surface and the second display layer group.
2. The display screen of claim 1, wherein the light shielding layer comprises:
the first light shielding layer is arranged between the first plate surface and the first display layer group;
and the second light shielding layer is arranged between the second plate surface and the second display layer group.
3. Display screen according to claim 1 or 2,
the first display layer group comprises a first circuit layer and a first light-emitting layer, and the first circuit layer is arranged between the first light-emitting layer and the substrate;
the second display layer group comprises a second circuit layer and a second light-emitting layer, and the second circuit layer is arranged between the second light-emitting layer and the substrate.
4. Display screen according to claim 3,
the first display layer group also comprises a first packaging layer, and the first packaging layer is arranged in the direction of the first light-emitting layer back to the first circuit layer; and/or
The second display layer group also comprises a second packaging layer, and the second packaging layer is arranged in the direction of the second light emitting layer back to the second circuit layer.
5. Display screen according to claim 3,
the circuit patterns of the first circuit layer and the circuit patterns of the second circuit layer are symmetrically arranged; and/or
The first light-emitting layer comprises a plurality of first color-rendering points, the second light-emitting layer comprises a plurality of second color-rendering points, and the plurality of first color-rendering points and the plurality of second color-rendering points are arranged in the same mode.
6. Display screen according to claim 3,
the first light emitting layer comprises an organic light emitting diode; and/or
The second light emitting layer includes an organic light emitting diode.
7. A preparation method of a display screen is characterized by comprising the following steps:
etching the first circuit layer on the first plate surface of the substrate, and etching the second circuit layer on the second plate surface of the substrate;
a first light emitting layer and a first encapsulation layer are applied to the first circuit layer and a second light emitting layer and a second encapsulation layer are applied to the second circuit layer.
8. The method for manufacturing a display screen according to claim 7, wherein etching the first circuit layer on the first surface of the substrate and etching the second circuit layer on the second surface of the substrate specifically comprises:
alternately etching the first circuit layer and the second circuit layer.
9. The method for manufacturing a display screen according to claim 8, wherein the alternately etching the first circuit layer and the second circuit layer specifically comprises:
etching the first circuit layer by a first process;
etching the second circuit layer through a second process based on completion of the first process;
etching the first circuit layer through a third process based on completion of the second process;
wherein the first step is performed in the same manner as the second step, and the third step is performed in a subsequent step adjacent to the first step.
10. The method for manufacturing a display screen according to claim 7, wherein the applying a first light-emitting layer and a first encapsulation layer to the first circuit layer and applying a second light-emitting layer and a second encapsulation layer to the second circuit layer specifically comprises:
sequentially applying a first light-emitting layer and a first packaging layer to the first circuit layer based on the first circuit layer and the second circuit layer being etched;
and sequentially applying a second light-emitting layer and a second packaging layer to the second circuit layer based on the completion of the processing of the first light-emitting layer and the first packaging layer.
11. The method for manufacturing a display panel according to any one of claims 7 to 10, wherein before the etching of the first circuit layer on the first plate surface of the substrate and the etching of the second circuit layer on the second plate surface of the substrate are performed, the method further comprises:
applying a first light shielding layer to the first plate surface; and/or
And applying a second light shielding layer to the second plate surface.
12. A method of fabricating a semiconductor circuit, comprising:
forming a first buffer layer on the first plate surface of the substrate, and forming a second buffer layer on the second plate surface of the substrate;
forming a first gate electrode on the first buffer layer, and forming a second gate electrode on the second buffer layer;
forming a first gate insulating layer to cover the first gate electrode, and forming a second gate insulating layer to cover the second gate electrode;
forming a first semiconductor layer on the first gate insulating layer, and forming a second semiconductor layer on the second gate insulating layer;
forming a first polycrystalline silicon layer on the first semiconductor layer, and forming a second polycrystalline silicon layer on the second semiconductor layer;
forming a first source drain electrode on the first semiconductor layer, and forming a second source drain electrode on the second semiconductor layer;
forming a first flat layer on the first semiconductor layer, and forming a second flat layer on the second semiconductor layer;
patterning the first planarization layer to expose the first source drain and patterning the second planarization layer to expose the second source drain;
a first pixel defining layer is formed on the first planar layer, and a second pixel defining layer is formed on the second planar layer.
13. An electronic device, comprising:
display screen according to any one of claims 1 to 6, or obtained according to the method for manufacturing a display screen according to any one of claims 7 to 11.
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