CN1128351A - Ruthenium-base electrode pulp for gas sensor - Google Patents
Ruthenium-base electrode pulp for gas sensor Download PDFInfo
- Publication number
- CN1128351A CN1128351A CN95100702.5A CN95100702A CN1128351A CN 1128351 A CN1128351 A CN 1128351A CN 95100702 A CN95100702 A CN 95100702A CN 1128351 A CN1128351 A CN 1128351A
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- CN
- China
- Prior art keywords
- composition
- gas sensor
- phase
- ruthenium
- oxide
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000001856 Ethyl cellulose Substances 0.000 claims abstract description 7
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims abstract description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 15
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 12
- 239000000428 dust Substances 0.000 claims description 9
- 239000011267 electrode slurry Substances 0.000 claims description 7
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000004359 castor oil Substances 0.000 claims description 6
- 235000019438 castor oil Nutrition 0.000 claims description 6
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 6
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- -1 13.3 Chemical compound 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 abstract description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 abstract 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010422 painting Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 229940116411 terpineol Drugs 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000002002 slurry Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 239000012074 organic phase Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical group [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Measuring Oxygen Concentration In Cells (AREA)
- Conductive Materials (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The electrode pulp consists of in weight percentage conducting phase including Ru, Pd and RuO2 in 40-60%, adhesive phase including glass powder and oxide in 15-50%, and organic carrier including ethyl cellulose, terpineol, etc. in 15%. With large painting area and strong adhesion, the said pulp is suitable for adhering electrode of gas sensor.
Description
The present invention relates to gas sensor electrode bonding slurry.
Semiconductor gas sensor has been widely used in fields such as industry, agricultural, mine, communications and transportation, health care, family life.Be mainly used in the harm that cause because of poisonous and leakage inflammable gas the work of preventing and life area.Gas sensor has slug type, film-type and thick-film type by the structure type classification.The slug type sensor is coating layer of metal oxide or a chloride semiconductor sensitive layer on a porcelain tube, on sensitive layer, place the electrode of making by the platinum silk, a kind of slurry of coating bonds together two layers between electrode and the sensitive layer, and at high temperature sintering curing is integral then.
Bonding with electrode slurry by the A. conductive phase, the B. phase that bond, C. organic carrier composition.Bonding should possess following main performances with electrode slurry:
1, can adapt to sintering temperature about 850 ℃;
2, the resistance of slurry side is generally at 5-100 Ω/mouth;
3, viscosity is at 150 ± 50Pas;
4, adhesion property is good, and the bonding electrode is firm;
5, stable chemical performance, long-term work about 400 ℃ not should with matrix and sensitive layer material generation bad reaction;
6, area coverage is big.
At present, widely used in the world gas sensor electrode slurry is gold conductive paste, the gold conductive paste of product 9791,4019,9910 trades mark such as grade of du pont company for example, domestic this institute products such as the IPM-C4910 gold conductive pastes of adopting more.But, because the gold paste material costs an arm and a leg, make the sensor cost higher, there is lack of raw materials for gold simultaneously, and a large amount of the use is restricted.And there is certain shortcoming in the adhesion deficiency of gold paste material in the use.
The objective of the invention is to propose a kind ofly can satisfy the gas sensor request for utilization, cost is low, and the bonding that easily obtains of raw material with electrode slurry to replace the gold paste material, reduce cost of products, save the consumption of gold.
Technical scheme of the present invention mainly is the composition that changes conductive phase A in the slurry, is base with the ruthenium, adds a certain amount of palladium, is selection component with RuO2 simultaneously, forms new conductive phase jointly.
Electrode slurry of the present invention by conductive phase (A), the bonding phase (B), and organic carrier (C) form.
The ratio (in wt%) of conductive phase (A) in slurry is 40-70.Ru is 60-90 in the conductive phase; Pd8-25; RuO20-16;
The ratio (with wt%) of bonding phase (B) in slurry is 15-50.Bonding phase (B) is made up of glass dust (Main Ingredients and Appearance is PbO, SiO2, H3BO3 and a small amount of ZnO, ZrO2 and Al2O3) and oxide (Bi2O3, Al2O3).Wherein the ratio of glass dust in boning mutually is (in wt%) 50-60, and the ratio of oxide in boning mutually is 40-50; The composition of glass dust (in wt%) is: PbO50-60, and SiO220-30, H3BO35-10, surplus is ZnO, ZrO2, Al2O3.The composition of oxide (in wt%) is Bi2O320-80, Al2O320-80;
The ratio (in wt%) of organic phase (C) in slurry is 15.Wherein: ethyl cellulose 1, terpinol 9, castor oil 1, dibutyl phthalate 2, butyl carbitol acetate 2.
The preparation technology of ruthenium-base electrode pulp of the present invention is: above each component is mixed, grinds, stirred, goes up the machine rolling in proportion, monitors granularity and slurry viscosity at last.
Ruthenium-base electrode pulp of the present invention has following characteristics:
1, sintering temperature is 800-850 ℃
2, side's resistance is 5-100 Ω/mouth.
3, adhesion is good, and behind the haircuts, 20 times of porcelain tubes reconnect continuous vibration and do not come off for 100 times.
4, chemical stability is good, with platinum filament, porcelain tube, sensitive material any bad reaction does not take place.
5, sensitivity S 〉=3 under the 1000ppm condition fortunately.
Compare with prior art gold paste material, the advantage of electrode slurry of the present invention is:
1, area coverage is big, and every gram gold paste material applies 800, and the ruthenium based sizing reaches 1000.
2, adhesion is better than gold paste.
3, save gold, reduced cost.
4, technology is simple, and fabrication cycle is short, easily promotes the use of.
Embodiment one:
1, composition (wt%)
Conductive phase 41, Ru33 wherein, Pd8;
The bonding phase: 44, wherein glass dust 24.2 (PbO14.5, SiO26.8, H3BO31.2, ZnO0.7, Al2O30.5, ZrO20.5), oxide 19.8 (Bi2O314.1, Al2O35.7);
Organic phase: 15, wherein ethyl cellulose 1, terpinol 9, castor oil 1, dibutyl phthalate 2, butyl carbitol acetate 2.
2, performance test: 850 ℃ are burnt till, thickness 12 μ m, and side's resistance 6 Ω/mouths, adhesion is good, sensitivity S=4.15
Embodiment two: (composition is in wt%)
Conductive phase: 53, Ru47 wherein, Pd6; The bonding phase: 32, wherein glass dust 18 (PbO10.9, SiO25, H3BO30.9, ZnO0.5, Al2O30.35, ZrO20.35), oxide 14 (Bi2O311, Al2O33);
Organic carrier: 15, wherein: ethyl cellulose 1, terpinol 9, castor oil 1, dibutyl phthalate 2, butyl carbitol acetate 2.
850 ℃ are burnt till, thickness 11 μ m, side's resistance 7 Ω/mouths, haircuts jail.
Embodiment three: (composition is in wt%)
Conductive phase: 65, Ru45 wherein, Pd10 RuO210;
The bonding phase: 20, wherein glass dust 12 (PbO7.2, SiO23.3, H3BO30.6, ZnO0.4 Al2O30.25, ZrO20.25), oxide 8 (Al2O32, Bi2O36);
Organic phase: 15, wherein: ethyl cellulose 1, terpinol 9, castor oil 1, dibutyl phthalate, 2, butyl carbitol acetate 2.
850 ℃ are burnt till, thickness 11 μ m, and side's resistance 8.18 Ω/mouths, densification, haircuts is firm.
Embodiment four: (composition is in wt%)
Conductive phase: 60, Ru45 wherein, Pd15,
The bonding phase: 25, wherein glass dust 15 (PbO9.0, SiO24.2, H3B3O0.75, ZnO0.45, Al2O30.3, ZrO20.3); Oxide 10 (Bi2O37, Al2O33);
Organic phase: 15, wherein ethyl cellulose 1, terpinol 9, castor oil 1, dibutyl phthalate 2, butyl carbitol acetate 2.
850 ℃ are burnt till, thickness 12mm, side's resistance 11.37 Ω/mouths, the good haircuts of adhesion jail, S=4.1
Claims (1)
1, a kind of ruthenium-base electrode pulp for gas sensor, by conductive phase (A), bonding phase (B), and organic carrier (C) composition is characterized in that:
1.1 the composition of said electrode slurry (in wt%) is: A40-70, B15-50, C15;
1.2 the composition (in wt%) of said conductive phase (A) is Ru60-90, Pd8-25, RuO20-16;
1.3 the composition (in wt%) of said bonding phase (B) is: glass dust 50-60, oxide 40-50.Wherein the composition of glass dust (in wt%) is: PbO50-60, and SiO220-30, H3BO35-10, surplus is ZnO, ZrO2, Al2O3.The composition of oxide (in wt%) is: Bi2O320-80, Al2O320-80;
1.4 the composition (in wt%) of said organic carrier (C) is: ethyl cellulose 6.7, terpinol 60, castor oil 6.7, dibutyl phthalate, 13.3, butyl carbitol acetate 13.3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95100702.5A CN1055768C (en) | 1995-01-03 | 1995-01-03 | Ruthenium-base electrode pulp for gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95100702.5A CN1055768C (en) | 1995-01-03 | 1995-01-03 | Ruthenium-base electrode pulp for gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1128351A true CN1128351A (en) | 1996-08-07 |
| CN1055768C CN1055768C (en) | 2000-08-23 |
Family
ID=5073575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95100702.5A Expired - Fee Related CN1055768C (en) | 1995-01-03 | 1995-01-03 | Ruthenium-base electrode pulp for gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1055768C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783212A (en) * | 2010-03-12 | 2010-07-21 | 华中科技大学 | Conductive adhesive and preparation method of conductive porous membrane with large specific surface |
| CN101290816B (en) * | 2007-04-18 | 2012-01-04 | 第一毛织株式会社 | Paste composition, display device including the same, and associated methods |
| CN105259211A (en) * | 2015-10-13 | 2016-01-20 | 武汉工程大学 | Gas-sensor nanometer sensitive material, slurry with gas-sensor nanometer sensitive material, preparing method of gas-sensor nanometer sensitive material, preparing method of slurry and application of gas-sensor nanometer sensitive material |
| CN105924871A (en) * | 2016-06-06 | 2016-09-07 | 怀远县金浩电子科技有限公司 | Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element |
| CN108709913A (en) * | 2018-05-22 | 2018-10-26 | 广东美的制冷设备有限公司 | Gas sensor sensitive material and preparation method thereof |
-
1995
- 1995-01-03 CN CN95100702.5A patent/CN1055768C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290816B (en) * | 2007-04-18 | 2012-01-04 | 第一毛织株式会社 | Paste composition, display device including the same, and associated methods |
| CN101783212A (en) * | 2010-03-12 | 2010-07-21 | 华中科技大学 | Conductive adhesive and preparation method of conductive porous membrane with large specific surface |
| CN105259211A (en) * | 2015-10-13 | 2016-01-20 | 武汉工程大学 | Gas-sensor nanometer sensitive material, slurry with gas-sensor nanometer sensitive material, preparing method of gas-sensor nanometer sensitive material, preparing method of slurry and application of gas-sensor nanometer sensitive material |
| CN105924871A (en) * | 2016-06-06 | 2016-09-07 | 怀远县金浩电子科技有限公司 | Preparation method of gas-sensitive slurry for semiconductor gas-sensitive element |
| CN108709913A (en) * | 2018-05-22 | 2018-10-26 | 广东美的制冷设备有限公司 | Gas sensor sensitive material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1055768C (en) | 2000-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GUIYAN PLATIUM CO., LTD. Free format text: FORMER OWNER: KUNMING PRECIOUS METALS RESEARCH INST., CHINA NONFERROUS METALS GEN. CORP. Effective date: 20010709 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20010709 Address after: Walnut Road, 2nd Ring Road, Kunming, Yunnan Patentee after: Guiyan Platinum Industry Co., Ltd. Address before: Beijiao, Kunming, Yunnan, Macun Patentee before: Kunming Noble Metal Inst., China Nonferrous Metal Industry General Co. |
|
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |