CN112834892A - Transconductance parameter testing circuit, method and system - Google Patents
Transconductance parameter testing circuit, method and system Download PDFInfo
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Abstract
The invention provides a test circuit, a test method and a test system of transconductance parameters, which comprise the following steps: the first end of the voltage source is connected with the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded; the first end of the current source is connected with the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded; the integration unit is respectively connected with a second pole and a third pole of the voltage-controlled device to be tested, and negative feedback can be formed between the second pole and the third pole; the differential measurement unit is respectively connected with the second pole and the third pole of the voltage-controlled device to be detected and is used for detecting the voltage between the second pole and the third pole of the voltage-controlled device to be detected. In the test circuit, the integral unit is connected between the second pole and the third pole of the voltage-controlled device to be tested, the integral unit can form negative feedback, the safety of transconductance parameter test can be improved, in addition, the arrangement of the integral unit can debug the voltage waveform of the third pole in the transconductance parameter test, and the test circuit has high usability.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a transconductance parameter testing circuit, a transconductance parameter testing method and a transconductance parameter testing system.
Background
Transconductance (identified by Gfs) is an attribute of an electronic component, and refers to a ratio between a variation value of current at an output end and a variation value of voltage at an input end, and for packaging tests of voltage-controlled high-power devices, such as Metal-Oxide-Semiconductor Field Effect transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), and the like, transconductance represents an amplification attribute of a device to be tested, and is an important parameter to be referred to in hardware design, and thus is also an important test parameter.
Taking the transconductance parameters tested during the packaging test of the enhanced N-channel high-power MOSFET as an example, the test requirements are as follows: applying a given voltage V between the D and S poles of the device under testdsAnd current IdsAnd measuring the voltage V between the G pole and the S pole of the device to be tested at the momentgs. By adjusting different IdsObtaining different VgsCalculating the difference value Delta IdsAnd Δ VgsThen the device under test transconductance can be given by the following equation:
the corresponding schematic diagram is shown in fig. 1. The transconductance parameter test circuit shown in fig. 1 comprises a device under test, a D-pole voltage source, an S-pole current source, and a common ground voltage measurement unit, and has a measurement principle that a G-pole of the device under test is grounded, and a voltage source applies a voltage V required for testingdsThe current source ensures that the test current is IdsAnd the common ground voltage measuring unit measures the voltage of the S pole to the ground.
In the test circuit, the G pole is directly grounded and is not directly connected with the S pole. When an abnormality occurs (for example, a loop fed back by a current source is broken), the voltage of an S electrode changes and cannot be fed back to a G electrode, so that the GS voltage difference is easily overlarge, a tested device is completely conducted in a serious condition, and under the combined action of the voltage source and the current source, large current oscillation is generated, so that the tested device and even test equipment are damaged, and the safety is poor; in addition, the G pole of the tested device is directly grounded, so that the voltage waveform of the G pole cannot be debugged, and the GS voltage establishing speed is completely dependent on the current source. For the test equipment, the current source has to measure more than one transconductance parameter, if the current source is used to carry out the V of the transconductance parametergsThe waveform debugging can be very inconvenient and the waveform debugging is very inconvenient,and the compatibility with other parameters is difficult to achieve, so the use is not flexible.
In summary, the conventional transconductance parameter test circuit has the problems of poor safety and inflexible use.
Disclosure of Invention
In view of this, the present invention provides a transconductance parameter testing circuit, a transconductance parameter testing method, and a transconductance parameter testing system, so as to alleviate technical problems of poor safety and inflexible use of the existing transconductance parameter testing circuit.
In a first aspect, an embodiment of the present invention provides a transconductance parameter testing circuit, including: the device comprises a voltage source, a current source, an integrating unit and a differential measuring unit;
the first end of the voltage source is connected with the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded;
the first end of the current source is connected with the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded;
the integration unit is respectively connected with a second pole and a third pole of the voltage-controlled device to be tested, and negative feedback can be formed between the second pole and the third pole;
the differential measurement unit is respectively connected with the second pole and the third pole of the voltage-controlled device to be detected and is used for detecting the voltage between the second pole and the third pole of the voltage-controlled device to be detected;
the first pole and the second pole are output poles of the voltage-controlled device to be tested, the third pole is an input pole of the voltage-controlled device to be tested, and the voltage difference between the third pole and the second pole can determine the output characteristics between the first pole and the second pole.
Further, the integration unit includes: a voltage follower and an inverting integrator.
Further, a positive phase input end of the voltage follower is connected with a second pole of the voltage-controlled device to be tested, an output end of the voltage follower is connected with a negative phase input end of the negative phase integrator, and an output end of the negative phase integrator is connected with a third pole of the voltage-controlled device to be tested.
Further, the voltage-controlled device to be tested includes any one of: metal-oxide semiconductor field effect transistors, insulated gate bipolar transistors.
Further, when the voltage-controlled device to be tested is the metal-oxide semiconductor field effect transistor, the first pole of the voltage-controlled device to be tested is the drain electrode of the metal-oxide semiconductor field effect transistor, the second pole of the voltage-controlled device to be tested is the source electrode of the metal-oxide semiconductor field effect transistor, and the third pole of the voltage-controlled device to be tested is the gate electrode of the metal-oxide semiconductor field effect transistor;
when the voltage-controlled device to be tested is the insulated gate bipolar transistor, the first pole of the voltage-controlled device to be tested is the collector electrode of the insulated gate bipolar transistor, the second pole of the voltage-controlled device to be tested is the emitter electrode of the insulated gate bipolar transistor, and the third pole of the voltage-controlled device to be tested is the grid electrode of the insulated gate bipolar transistor.
Further, the voltage value of the voltage source is fixed and unchanged.
In a second aspect, an embodiment of the present invention further provides a method for testing a transconductance parameter, which is applied to a circuit for testing a transconductance parameter in any one of the first aspects, and the method includes:
when the current between the first pole and the second pole is a first current value, acquiring a first voltage value measured by the differential measurement unit;
when the current between the first pole and the second pole is a second current value, acquiring a second voltage value measured by the differential measurement unit;
and calculating the transconductance parameter of the voltage-controlled device to be tested based on the first current value, the second current value, the first voltage value and the second voltage value.
Further, calculating a transconductance parameter of the voltage controlled device to be tested based on the first current value, the second current value, the first voltage value and the second voltage value, including:
calculation formula based on transconductance parameters
Calculating transconductance parameters of the voltage-controlled device to be tested, wherein GfsRepresents the transconductance parameter, Δ I represents a difference between the first current value and the second current value, and Δ V represents a difference between the first voltage value and the second voltage value.
Further, the first current value is a first preset value, and the second current value is a second preset value.
In a third aspect, an embodiment of the present invention provides a transconductance parameter testing system, where the testing system includes a transconductance parameter testing circuit according to any one of the first aspect, and further includes: the device comprises a mainframe box, a test head and a voltage-controlled device to be tested;
voltage source and current source among the test circuit set up on the resource board in the mainframe box, the resource board pass through the test cable with the test head is connected, integral unit, the difference measuring unit among the test circuit respectively with the test head is connected, the test head still with the voltage-controlled device that awaits measuring is connected.
In an embodiment of the present invention, a transconductance parameter testing circuit is provided, including: the first end of the voltage source is connected with the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded; the first end of the current source is connected with the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded; the integration unit is respectively connected with a second pole and a third pole of the voltage-controlled device to be tested, and negative feedback can be formed between the second pole and the third pole; the differential measurement unit is respectively connected with the second pole and the third pole of the voltage-controlled device to be detected and is used for detecting the voltage between the second pole and the third pole of the voltage-controlled device to be detected; the first pole and the second pole are output poles of the voltage-controlled device to be tested, the third pole is an input pole of the voltage-controlled device to be tested, and the voltage difference between the third pole and the second pole can determine the output characteristics between the first pole and the second pole. According to the above description, in the test circuit of the present invention, the integrating unit is connected between the second pole and the third pole of the voltage controlled device to be tested, and the integrating unit can form negative feedback between the second pole and the third pole, so that the safety of the transconductance parameter test can be improved.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic diagram of a conventional transconductance parameter testing circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a transconductance parameter testing circuit according to an embodiment of the present invention;
FIG. 3 is a circuit diagram for testing transconductance parameters of an enhanced NMOS transistor according to an embodiment of the present invention;
fig. 4 is a test waveform diagram corresponding to a transconductance parameter test provided in an embodiment of the present invention;
fig. 5 is a flowchart of a method for testing transconductance parameters according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a semiconductor test system according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of the positions of various parts in a conventional transconductance parameter testing circuit in a testing system according to an embodiment of the present invention;
fig. 8 is a schematic diagram of positions of various parts in a transconductance parameter testing circuit in a testing system according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For the convenience of understanding the present embodiment, a transconductance parameter testing circuit disclosed in the present embodiment is first described in detail.
The first embodiment is as follows:
to facilitate understanding of the present embodiment, first, a transconductance parameter testing circuit disclosed in the embodiment of the present invention is described in detail, referring to a schematic structural diagram of a transconductance parameter testing circuit shown in fig. 2, where the transconductance parameter testing circuit includes: the device comprises a voltage source, a current source, an integrating unit and a differential measuring unit;
the first end of the voltage source is connected with the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded;
the first end of the current source is connected with the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded;
the integration unit is respectively connected with a second pole and a third pole of the voltage-controlled device to be tested, and negative feedback can be formed between the second pole and the third pole;
the differential measurement unit is respectively connected with the second pole and the third pole of the voltage-controlled device to be detected and is used for detecting the voltage between the second pole and the third pole of the voltage-controlled device to be detected;
the first pole and the second pole are output poles of the voltage-controlled device to be tested, the third pole is an input pole of the voltage-controlled device to be tested, and the voltage difference between the third pole and the second pole can determine the output characteristics between the first pole and the second pole.
In the embodiment of the present invention, the integrating unit may form negative feedback between the second pole and the third pole, that is, when the voltage of the second pole is too low, the output of the inverting integrator may increase in the forward direction, the voltage between the third pole and the second pole increases, the voltage controlled device to be tested may be conducted more thoroughly, and the on-resistance (i.e., the first pole and the second pole resistance) of the voltage controlled device to be tested decreases, so that more current may flow into the current source of the second pole, thereby achieving the voltage required by the current source (even if the voltage of the second pole increases), and increasing the output current of the current source; when the voltage of the second pole is too high, the output forward direction of the inverting integrator is reduced, the voltage between the third pole and the second pole is reduced, the conduction degree of the voltage-controlled device to be tested is reduced, the conduction resistance of the voltage-controlled device to be tested is increased, and the current flowing into the current source is reduced, so that the voltage required by the current source is achieved (even if the voltage of the second pole is reduced), and the output current of the current source is reduced. The negative feedback process can improve the safety of the transconductance parameter test.
In an embodiment of the present invention, a transconductance parameter testing circuit is provided, including: the first end of the voltage source is connected with the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded; the first end of the current source is connected with the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded; the integration unit is respectively connected with a second pole and a third pole of the voltage-controlled device to be tested, and negative feedback can be formed between the second pole and the third pole; the differential measurement unit is respectively connected with the second pole and the third pole of the voltage-controlled device to be detected and is used for detecting the voltage between the second pole and the third pole of the voltage-controlled device to be detected; the first pole and the second pole are output poles of the voltage-controlled device to be tested, the third pole is an input pole of the voltage-controlled device to be tested, and the voltage difference between the third pole and the second pole can determine the output characteristics between the first pole and the second pole. According to the above description, in the test circuit of the present invention, the integrating unit is connected between the second pole and the third pole of the voltage controlled device to be tested, and the integrating unit can form negative feedback between the second pole and the third pole, so that the safety of the transconductance parameter test can be improved.
The foregoing description briefly describes the transconductance parameter testing circuit of the present invention, and the following detailed description refers to the specific details thereof.
In an alternative embodiment of the invention, the integration unit comprises: a voltage follower and an inverting integrator.
Specifically, the positive phase input end of the voltage follower is connected with the second pole of the voltage-controlled device to be tested, the output end of the voltage follower is connected with the negative phase input end of the negative phase integrator, and the output end of the negative phase integrator is connected with the third pole of the voltage-controlled device to be tested.
In an optional embodiment of the present invention, the voltage controlled device under test comprises any one of: metal-oxide semiconductor field effect transistors, insulated gate bipolar transistors;
when the voltage-controlled device to be tested is the metal-oxide semiconductor field effect transistor, the first pole of the voltage-controlled device to be tested is the drain electrode of the metal-oxide semiconductor field effect transistor, the second pole of the voltage-controlled device to be tested is the source electrode of the metal-oxide semiconductor field effect transistor, and the third pole of the voltage-controlled device to be tested is the grid electrode of the metal-oxide semiconductor field effect transistor;
when the voltage-controlled device to be tested is the insulated gate bipolar transistor, the first pole of the voltage-controlled device to be tested is the collector electrode of the insulated gate bipolar transistor, the second pole of the voltage-controlled device to be tested is the emitter electrode of the insulated gate bipolar transistor, and the third pole of the voltage-controlled device to be tested is the grid electrode of the insulated gate bipolar transistor.
The transconductance parameter testing circuit of the present invention is described below by taking the voltage controlled device to be tested as an enhancement type N-channel metal-oxide semiconductor field effect transistor as an example.
Fig. 3 is a circuit diagram for testing transconductance parameters of an enhancement mode N-channel mosfet according to the present invention, and the following description is provided for the testing procedure:
in the circuit diagram shown in fig. 3, the voltage between the DS poles is fixed, guaranteed by a voltage source, the magnitude of which is V given by the customerdsFor example 15V. During testing, the voltage source outputs electricityPressure VdsAt this time, the current source is not output, the voltage between GS electrodes is low, and the on-resistance R of the MOS transistor isdsIs very large.
The first stage is as follows: when adding the first IdsWhen it is, for example, 15A, because of the on-resistance R of the MOS transistordsGreatly, the current 15A which is added by the current source can not be reached, and under the negative feedback action of the current source, the power amplifier of the current source can output negative voltage (because of negative current), so that the S pole is the negative voltage, for example, -2V. At this time VdsThe set value is 15V under the action of the voltage source, only the moment VdIt became 13V.
Because the S pole outputs negative voltage, the integrator output begins to become positive (positive left and negative right), VgsGradually increase in RdsWith a consequent decrease in RdsWhen the temperature of the water is reduced to 1 ohm,
at the moment, the set value of the current source is reached, so that the power amplifier output of the current source is changed into 0V, the integration is stopped, and V isgsThe voltage is stopped at a proper value (making the MOS transistor Rds1 ohm).
And a second stage: when adding a second IdsFor example, 10A, because the on-resistance R of the MOS transistor is at this timedsAnd at the moment, the current 10A which is far more than the current source needs to add is obtained, and under the action of negative feedback of the current source, the power amplifier of the current source outputs positive voltage (because of positive current), so that the S pole is positive voltage, for example, is + 2V. At this time VdsThe set value is 15V under the action of the voltage source, only the moment VdIt became 15V.
Because the S pole outputs positive voltage, the integrator output begins to become negative (negative left to positive right), VgsGradually decrease RdsThen rise when R isdsWhen the temperature is increased to 1.5 ohms,
at the moment, the set value of the current source is reached, so that the power amplifier output of the current source is changed into 0V, the integration is stopped, and V isgsThe voltage is stopped atProper value (make MOS transistor Rds1.5 ohms).
The corresponding test waveform diagram is shown in fig. 4, and the above-described process is:
during the test, VdsThe value given by the customer is always maintained, the test is carried out in two phases, the first phase being a high IdsCorresponding to a low voltage, the second phase is a low IdsThe corresponding voltage.
For example, VdsAlways at 15V, first stage IdsHas a value of 15A, second stage IdsIs 10A (all three values are customer-specified), corresponding to a waveform diagram, VdsFrom 0 to 15V, corresponding to the first rising edge, the voltage source output voltage is 0V when the test is not started, the voltage source output voltage is increased to 15V when the test is started, and then the test is carried out when IdsAt 15A, corresponding to VgsThen tested once more when IdsAt 10A, corresponding to VgsThe waveform of fig. 4 can be obtained by the value of (b). In FIG. 4, V is due to the presence of the integratorgsInitially not 0, should integrate to a negative value, the pipeline is shut off, so throughout the process, VgsThe process is from negative voltage to a positive high voltage, then to a positive low voltage, and finally the test is finished, and then the process returns to negative voltage.
When the test is debugged, developers can adjust the size of the current source and the resistance values of the capacitor and the resistor, so that the requirement of customers on V is metdsAnd IdsThe method can be used for adjusting and testing the parameter of the transconductance parameter, and is more convenient and flexible.
Example two:
the embodiment of the present invention further provides a method for testing transconductance parameters, where the method is applied to a circuit for testing transconductance parameters in the first embodiment, and referring to fig. 5, the method includes:
step S501, when the current between the first pole and the second pole is a first current value, acquiring a first voltage value measured by a differential measurement unit;
step S502, when the current between the first pole and the second pole is a second current value, acquiring a second voltage value measured by the differential measurement unit;
step S503, calculating a transconductance parameter of the voltage controlled device to be measured based on the first current value, the second current value, the first voltage value and the second voltage value.
Specifically, the formula is calculated according to the transconductance parameter
Calculating transconductance parameters of the voltage-controlled device to be tested, wherein GfsAnd indicating the transconductance parameter, wherein Δ I indicates a difference between the first current value and the second current value, and Δ V indicates a difference between the first voltage value and the second voltage value, wherein the first current value is a first preset value, and the second current value is a second preset value.
Example three:
the embodiment of the present invention further provides a transconductance parameter testing system, where the transconductance parameter testing system includes the transconductance parameter testing circuit in the first embodiment, and further includes: the device comprises a mainframe box, a test head and a voltage-controlled device to be tested;
voltage source and current source among the test circuit set up on the resource board in the mainframe box, the resource board pass through the test cable with the test head is connected, integral unit, the difference measuring unit among the test circuit respectively with the test head is connected, the test head still with the voltage-controlled device that awaits measuring is connected.
The following is a comparative description of a conventional test system and a test system of the present invention:
a typical semiconductor test system consists of three parts, namely a main chassis, a test cable and a test head, and a schematic structural diagram of the system is shown in fig. 6. The host box usually includes a control system and a resource board, the control system (e.g., PC, FPGA, etc.) is mainly responsible for controlling the entire test system and interacting with the outside, and the resource board mainly provides necessary resources for the test, for example, in the transconductance parameter test, a voltage source and a current source are required, that is, test resources provided by the corresponding resource board in the host box.
The mainframe box is connected with the test head through a test cable, and the test head is mainly responsible for building a corresponding test loop according to a tested product. Different semiconductor tests have different parameters and different required test loops, but as long as the required test resources are consistent, the test of different semiconductor products can be realized by simply replacing the test head.
In a transconductance parameter testing system, as described in the background art, a transconductance parameter is one of the testing parameters of some voltage-controlled high-power semiconductor devices, and a conventional testing circuit is composed of four parts, i.e., a device under test, a D-pole voltage source (shown as a voltage source in the figure), an S-pole current source (shown as a current source in the figure), and a common ground voltage measuring unit (shown as a measuring unit in the figure). The positions of the various parts in the conventional transconductance parametric test circuit in the test system are shown in fig. 7. In fig. 7, the voltage source and the current source are provided by the resource board card, and in the conventional transconductance parameter test, the voltage measurement is realized by the resource board, so that during the test, the voltage measurement of the transconductance parameter is realized by directly using the measurement unit in the resource board, and the device under test and the test circuit thereof are built by the test head.
The transconductance parameter testing circuit of the invention comprises an integrating unit besides a voltage source, a current source, a differential measuring unit and a voltage-controlled device to be tested, and a third pole voltage is independent of the voltage source and the current source, so that the measuring unit in a resource board can not be directly used.
The circuit for testing transconductance parameters, the method for testing transconductance parameters, and the computer program product of the testing system provided in the embodiments of the present invention include a computer-readable storage medium storing program codes, where instructions included in the program codes may be used to execute the method described in the foregoing method embodiments, and specific implementations may refer to the method embodiments and are not described herein again.
In addition, in the description of the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A transconductance parameter testing circuit, comprising: the device comprises a voltage source, a current source, an integrating unit and a differential measuring unit;
the first end of the voltage source is connected with the first pole of the voltage-controlled device to be tested, and the second end of the voltage source is grounded;
the first end of the current source is connected with the second pole of the voltage-controlled device to be tested, and the second end of the current source is grounded;
the integration unit is respectively connected with a second pole and a third pole of the voltage-controlled device to be tested, and negative feedback can be formed between the second pole and the third pole;
the differential measurement unit is respectively connected with the second pole and the third pole of the voltage-controlled device to be detected and is used for detecting the voltage between the second pole and the third pole of the voltage-controlled device to be detected;
the first pole and the second pole are output poles of the voltage-controlled device to be tested, the third pole is an input pole of the voltage-controlled device to be tested, and the voltage difference between the third pole and the second pole can determine the output characteristics between the first pole and the second pole.
2. The test circuit of claim 1, wherein the integration unit comprises: a voltage follower and an inverting integrator.
3. The test circuit of claim 2, wherein the non-inverting input of the voltage follower is connected to the second pole of the voltage controlled device under test, the output of the voltage follower is connected to the inverting input of the inverting integrator, and the output of the inverting integrator is connected to the third pole of the voltage controlled device under test.
4. The test circuit of claim 1, wherein the voltage controlled device under test comprises any of: metal-oxide semiconductor field effect transistors, insulated gate bipolar transistors.
5. The test circuit of claim 4, wherein when the voltage controlled device under test is the MOSFET, the first pole of the voltage controlled device under test is the drain of the MOSFET, the second pole of the voltage controlled device under test is the source of the MOSFET, and the third pole of the voltage controlled device under test is the gate of the MOSFET;
when the voltage-controlled device to be tested is the insulated gate bipolar transistor, the first pole of the voltage-controlled device to be tested is the collector electrode of the insulated gate bipolar transistor, the second pole of the voltage-controlled device to be tested is the emitter electrode of the insulated gate bipolar transistor, and the third pole of the voltage-controlled device to be tested is the grid electrode of the insulated gate bipolar transistor.
6. The test circuit of claim 1, wherein the voltage value of the voltage source is fixed.
7. A method for testing transconductance parameters, wherein the method is applied to a circuit for testing transconductance parameters of any one of claims 1 to 6, and the method comprises:
when the current between the first pole and the second pole is a first current value, acquiring a first voltage value measured by the differential measurement unit;
when the current between the first pole and the second pole is a second current value, acquiring a second voltage value measured by the differential measurement unit;
and calculating the transconductance parameter of the voltage-controlled device to be tested based on the first current value, the second current value, the first voltage value and the second voltage value.
8. The method of claim 7, wherein calculating a transconductance parameter of the voltage controlled device under test based on the first current value, the second current value, the first voltage value, and the second voltage value comprises:
calculation formula based on transconductance parameters
Calculating transconductance parameters of the voltage-controlled device to be tested, wherein GfsRepresents the transconductance parameter, Δ I represents a difference between the first current value and the second current value, and Δ V represents a difference between the first voltage value and the second voltage value.
9. The method of claim 7, wherein the first current value is a first preset value and the second current value is a second preset value.
10. A transconductance parameter testing system, comprising a transconductance parameter testing circuit according to any one of claims 1-6, and further comprising: the device comprises a mainframe box, a test head and a voltage-controlled device to be tested;
voltage source and current source among the test circuit set up on the resource board in the mainframe box, the resource board pass through the test cable with the test head is connected, integral unit, the difference measuring unit among the test circuit respectively with the test head is connected, the test head still with the voltage-controlled device that awaits measuring is connected.
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