CN112831831A - Seeding device and seeding method for producing czochralski silicon - Google Patents
Seeding device and seeding method for producing czochralski silicon Download PDFInfo
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- CN112831831A CN112831831A CN202110026220.1A CN202110026220A CN112831831A CN 112831831 A CN112831831 A CN 112831831A CN 202110026220 A CN202110026220 A CN 202110026220A CN 112831831 A CN112831831 A CN 112831831A
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- Prior art keywords
- seeding
- silicon
- monocrystalline silicon
- czochralski
- production
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention relates to the technical field of monocrystalline silicon production and processing equipment, in particular to a seeding device and a seeding method for straight-pull monocrystalline silicon production. According to the invention, the monocrystalline silicon can be conveniently and slowly pulled upwards through the seeding mechanism, so that the monocrystalline silicon drives the polycrystalline silicon raw material to be upwards stretched, the stable operation of seeding is ensured, the production efficiency is high, the seeding can be conveniently and smoothly performed through the seeding method, and the lifting cylinder ensures that the crystal is slowly pulled upwards and avoids the phenomena of fracture and the like.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon production and processing equipment, in particular to a seeding device and a seeding method for producing czochralski monocrystalline silicon.
Background
The Czochralski silicon is a silicon single crystal which is pulled from a silicon melt along the vertical direction and has a certain size, a certain crystal orientation, a certain conductive type and a certain resistivity range, and when the silicon single crystal is produced, the silicon single crystal needs to be pulled upwards for growth, namely a Czochralski method. According to statistics, 70-80% of the world's silicon single crystal yield is produced by the Czochralski method.
The pulling that makes progress is not convenient for when production to current czochralski silicon, causes the fracture and the distortion of crystal easily to influence the growth of czochralski silicon, and can not carry out pulling simultaneously to a plurality of crystals simultaneously, cause crystal production efficiency lower, current device is also not convenient for dismantle in addition, and is very inconvenient when the silicon single crystal is carried out production to the needs change.
Disclosure of Invention
The invention aims to provide a seeding device and a seeding method for producing czochralski silicon, which aim to solve the problems in the prior art.
In order to achieve the purpose, the invention provides a seeding device for producing czochralski silicon, which comprises a seeding box, wherein a blanking funnel is arranged on the seeding box, a heating seat is arranged at the bottom in the seeding box, a crucible is arranged at the top of the heating seat, a discharge port of the blanking funnel is over against an inlet of the crucible, a seeding mechanism is arranged right above the seeding box, the seeding mechanism comprises two lifting cylinders symmetrically embedded on the inner wall of the seeding box, a fixed rod is arranged at the top of a piston rod of each lifting cylinder, a monocrystalline silicon chuck is arranged between the two fixed rods, monocrystalline silicon is arranged at the bottom of the monocrystalline silicon chuck, and the monocrystalline silicon is in clamping fit with the monocrystalline silicon chuck.
Preferably, a plurality of fixing holes which are uniformly and equidistantly arranged in an annular mode are formed in the outer side of the top of the discharging funnel, and a clamping mechanism is arranged on the outer side, located on the discharging funnel, of the top of the seeding box.
Preferably, the clamping mechanism comprises a clamping plate, a pin shaft is arranged at one end of the clamping plate, the bottom of the pin shaft penetrates through the clamping plate and is in clamping fit with the fixing hole, and the other end of the clamping plate is hinged to the top of the seeding box through a first hinge.
Preferably, the fixed rod is connected with the top of the piston rod of the lifting cylinder through a clamping mechanism.
Preferably, the clamping mechanism comprises a fixing frame, a lower clamping ring is tightly welded to the top of the fixing frame, an upper clamping ring is arranged at the top of the lower clamping ring, and one side of the upper clamping ring is hinged to the lower clamping ring through a second hinge.
Preferably, the other sides of the upper clamping ring and the lower clamping ring are tightly welded with clamping plates which are fixedly connected through bolts.
Preferably, the top of the blanking funnel is provided with a sealing cover, and the center of the top of the sealing cover is provided with a through hole matched with the diameter of the monocrystalline silicon chuck.
Preferably, the diameter of the outlet aperture of the blanking funnel is matched with the diameter of the monocrystalline silicon chuck.
On the other hand, the invention also provides a seeding method for producing the czochralski silicon, which comprises the seeding device for producing the czochralski silicon, and the seeding method specifically comprises the following steps:
s1: spraying a silicon nitride coating with the thickness of 90-110 mu m on the inner wall of the crucible;
s2: putting a high-purity polycrystalline silicon raw material into a crucible;
s3: melting the seat by the high temperature generated by heating the seat;
s4: inserting the monocrystalline silicon at the bottom end of the monocrystalline silicon chuck into the crucible;
s5: after the monocrystalline silicon and the polycrystalline silicon raw materials are melted, the lifting cylinder works to drive the fixing rod to move upwards, and further the monocrystalline silicon is driven to be slowly pulled upwards, so that crystals can grow at the lower end of the monocrystalline silicon;
s6: controlling the crystal to grow a section of thin neck with the length of about 100mm and the diameter of 3-5mm to obtain the czochralski silicon.
Compared with the prior art, the invention has the beneficial effects that:
1. the seeding device and the seeding method for producing the czochralski silicon can conveniently and slowly pull up the monocrystalline silicon through the seeding mechanism, so that the monocrystalline silicon drives the polycrystalline silicon raw material to be pulled upwards, the stable operation of seeding is ensured, the production efficiency is high, the seeding can be conveniently and smoothly carried out through the seeding method, and the lifting cylinder ensures that the crystal is slowly pulled straight upwards and avoids the phenomena of fracture and the like.
2. The other end of the clamping plate is hinged with the top of the seeding box through a first hinge in the seeding device and the seeding method for producing the czochralski silicon, and the seeding device and the seeding method are used for tightly clamping the outer side of the discharging funnel and are convenient to detach.
3. According to the seeding device and the seeding method for producing the czochralski silicon, the fixing rod can be loosened by upwards overturning the upper clamping ring, so that the fixing rod is convenient to detach.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of the present invention at the start of seeding;
FIG. 3 is a schematic view of a structure for mounting single crystal silicon in the present invention;
FIG. 4 is an enlarged view of the snapping mechanism of the present invention;
fig. 5 is an enlarged view of the chucking mechanism of the present invention.
The various reference numbers in the figures mean:
1. a seeding box; 11. a discharging hopper; 12. a fixing hole; 13. a chucking mechanism; 131. clamping a plate; 132. a first hinge; 133. a pin shaft; 14. a heating base; 15. a crucible; 16. a sealing cover; 2. a seeding mechanism; 21. a lifting cylinder; 22. a clamping mechanism; 221. a fixed mount; 222. a lower snap ring; 223. a snap ring is arranged; 2231. a second hinge; 2232. a clamping and connecting plate; 2233. a bolt; 224. a limiting ring; 23. fixing the rod; 24. a monocrystalline silicon chuck; 25. monocrystalline silicon.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Example 1
A seeding device for producing czochralski monocrystalline silicon comprises a seeding box 1, wherein a blanking funnel 11 is arranged on the seeding box 1, a heating seat 14 is arranged at the bottom in the seeding box 1, a crucible 15 is arranged at the top of the heating seat 14, a discharge port of the blanking funnel 11 is over against an inlet of the crucible 15, a seeding mechanism 2 is arranged right above the seeding box 1, the seeding mechanism 2 comprises two lifting cylinders 21 symmetrically embedded on the inner wall of the seeding box 1, a fixing rod 23 is arranged at the top of a piston rod of each lifting cylinder 21, a monocrystalline silicon chuck 24 is arranged between the two fixing rods 23, a monocrystalline silicon 25 is arranged at the bottom of the monocrystalline silicon chuck 24, and the monocrystalline silicon 25 is in clamping fit with the monocrystalline silicon chuck 24.
Further, a plurality of uniform equidistance are fixed orifices 12 that are cyclic annular arrangement offered in the top outside of unloading funnel 11, the outside that the top of seeding case 1 is located unloading funnel 11 is provided with chucking mechanism 13, chucking mechanism 13 includes cardboard 131, the one end of cardboard 131 is provided with round pin axle 133, the bottom of round pin axle 133 is passed cardboard 131 and is cooperated with fixed orifices 12 joint, the other end of cardboard 131 is articulated through first hinge 132 with the top of seeding case 1, be used for tightly blocking the outside of unloading funnel 11, and convenient to detach.
Specifically, be connected through latch mechanism 22 between the top of dead lever 23 and lift cylinder 21 piston rod, latch mechanism 22 includes mount 221, mount 221's top has closely welded down snap ring 222, the top of lower snap ring 222 is provided with snap ring 223, it is articulated with lower snap ring 222 through second hinge 2231 to go up one side of snap ring 223, the opposite side of going up snap ring 223 and lower snap ring 222 has closely welded joint board 2232, snap joint board 2232 passes through bolt 2233 fixed connection, snap ring 223 can be with loosening of dead lever 23 through upwards overturning, be convenient for the dismantlement of dead lever 23.
In addition, a sealing cover 16 is installed at the top of the blanking funnel 11, a through hole matched with the diameter of the monocrystalline silicon chuck 24 is formed in the center of the top of the sealing cover 16, and the diameter of an outlet of the blanking funnel 11 is matched with the diameter of the monocrystalline silicon chuck 24.
On the other hand, the invention also provides a seeding method for producing the czochralski silicon, which comprises the seeding device for producing the czochralski silicon, and the seeding method specifically comprises the following steps:
s1: spraying a silicon nitride coating with the thickness of 90-110 mu m on the inner wall of the crucible 15;
s2: putting a high-purity polycrystalline silicon raw material into a blanking funnel 11 and feeding the polycrystalline silicon raw material into a crucible 15;
s3: it is melted by the high temperature generated by heating the seat 14;
s4: then the monocrystalline silicon 25 at the bottom end of the monocrystalline silicon chuck 24 is inserted into the crucible 15;
s5: after the monocrystalline silicon 25 is melted with the polycrystalline silicon raw material, the lifting cylinder 21 works to drive the fixing rod 23 to move upwards, so that the monocrystalline silicon 25 is driven to be slowly pulled upwards, and crystals grow at the lower end of the monocrystalline silicon;
s6: controlling the crystal to grow a section of thin neck with the length of about 100mm and the diameter of 3-5mm to obtain the czochralski silicon.
According to the seeding device and the seeding method for producing the czochralski silicon, the single crystal silicon 25 can be conveniently and slowly pulled upwards through the seeding mechanism 2, so that the single crystal silicon 25 drives the polycrystalline silicon raw material to be pulled upwards, the stable seeding operation is ensured, the production efficiency is high, the seeding can be conveniently and smoothly carried out through the seeding method, and the lifting cylinder 21 ensures that the crystal is slowly pulled upwards and avoids the phenomena of fracture and the like.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A seeding device for producing czochralski silicon is characterized in that: including seeding case (1), install unloading funnel (11) on seeding case (1), heating seat (14) are installed to the bottom in seeding case (1), crucible (15) are installed at the top of heating seat (14), the discharge gate of unloading funnel (11) is just to the import department of crucible (15), seeding mechanism (2) is installed directly over seeding case (1), seeding mechanism (2) includes that two symmetries inlay locates lift cylinder (21) on seeding case (1) inner wall, every dead lever (23) are installed at the piston rod top of lift cylinder (21), installs monocrystalline silicon chuck (24) between two dead levers (23), monocrystalline silicon (25) are installed to the bottom of monocrystalline silicon chuck (24), monocrystalline silicon (25) and monocrystalline silicon chuck (24) joint cooperation.
2. A seeding apparatus for use in the production of czochralski silicon as claimed in claim 1, wherein: the fixed orifices (12) that a plurality of even equidistance are cyclic annular range are seted up in the top outside of unloading funnel (11), the outside that the top of seeding case (1) is located unloading funnel (11) is provided with chucking mechanism (13).
3. A seeding apparatus for use in the production of czochralski silicon as claimed in claim 2, wherein: the clamping mechanism (13) comprises a clamping plate (131), a pin shaft (133) is arranged at one end of the clamping plate (131), the bottom of the pin shaft (133) penetrates through the clamping plate (131) and is in clamping fit with the fixing hole (12), and the other end of the clamping plate (131) is hinged to the top of the seeding box (1) through a first hinge (132).
4. A seeding apparatus for use in the production of czochralski silicon as claimed in claim 1, wherein: the fixed rod (23) is connected with the top of the piston rod of the lifting cylinder (21) through a clamping mechanism (22).
5. A seeding apparatus for the production of czochralski silicon as claimed in claim 4, wherein: the clamping mechanism (22) comprises a fixing frame (221), a lower clamping ring (222) is tightly welded to the top of the fixing frame (221), an upper clamping ring (223) is arranged at the top of the lower clamping ring (222), and one side of the upper clamping ring (223) is hinged to the lower clamping ring (222) through a second hinge (2231).
6. A seeding apparatus for the production of czochralski silicon as claimed in claim 5, wherein: the other side of going up snap ring (223) and lower snap ring (222) has closely welded joint board (2232), joint board (2232) pass through bolt (2233) fixed connection.
7. A seeding apparatus for use in the production of czochralski silicon as claimed in claim 1, wherein: the top of the blanking funnel (11) is provided with a sealing cover (16), and the center of the top of the sealing cover (16) is provided with a through hole matched with the diameter of the monocrystalline silicon chuck (24).
8. A seeding apparatus for use in the production of czochralski silicon as claimed in claim 1, wherein: the diameter of the outlet aperture of the blanking funnel (11) is matched with the diameter of the monocrystalline silicon chuck (24).
9. A seeding method for producing czochralski silicon, comprising the seeding apparatus for producing czochralski silicon as claimed in any one of claims 1 to 8, characterized in that: the method specifically comprises the following steps:
s1: spraying a silicon nitride coating with the thickness of 90-110 mu m on the inner wall of the crucible (15);
s2: placing a high purity polycrystalline silicon feedstock into a crucible (15);
s3: melting it by the high temperature generated by heating the seat (14);
s4: then inserting the monocrystalline silicon (25) at the bottom end of the monocrystalline silicon chuck (24) into the crucible (15);
s5: after the monocrystalline silicon (25) is melted with the polycrystalline silicon raw material, the lifting cylinder (21) works to drive the fixing rod (23) to move upwards, so that the monocrystalline silicon (25) is driven to slowly pull upwards, and crystals grow at the lower end of the monocrystalline silicon;
s6: controlling the crystal to grow a section of thin neck with the length of about 100mm and the diameter of 3-5mm to obtain the czochralski silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110026220.1A CN112831831A (en) | 2021-01-08 | 2021-01-08 | Seeding device and seeding method for producing czochralski silicon |
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| CN202110026220.1A CN112831831A (en) | 2021-01-08 | 2021-01-08 | Seeding device and seeding method for producing czochralski silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0297481A (en) * | 1988-10-05 | 1990-04-10 | Mitsubishi Metal Corp | Pulling up device for silicon single crystal |
| JPH11130582A (en) * | 1997-08-01 | 1999-05-18 | Motorola Inc | Single crystal ingot and its growth and apparatus therefor |
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| JP2013147387A (en) * | 2012-01-20 | 2013-08-01 | Nippon Steel & Sumikin Fine Technology Co Ltd | Single crystal manufacturing apparatus |
| CN105014536A (en) * | 2015-08-14 | 2015-11-04 | 麦斯克电子材料有限公司 | Centering device for crystal bar before barrelling |
| CN205171013U (en) * | 2015-11-17 | 2016-04-20 | 哈尔滨奥瑞德光电技术有限公司 | Modified jumbo size sapphire single crystal growing furnace supporting structure |
| CN106400106A (en) * | 2016-08-31 | 2017-02-15 | 内蒙古中环光伏材料有限公司 | Method and device for improving uniformity of axial resistivity of czochralski monocrystalline silicon |
| CN105239155B (en) * | 2015-11-17 | 2017-10-24 | 哈尔滨奥瑞德光电技术有限公司 | Improved large-size sapphire single-crystal furnace cradle structure |
| CN209669391U (en) * | 2019-03-12 | 2019-11-22 | 合智熔炼装备（上海）有限公司 | A kind of monocrystalline orientation hot investment casting furnace clamp device |
| CN110528074A (en) * | 2019-09-26 | 2019-12-03 | 南通晶耀新能源有限公司 | A kind of monocrystalline silicon refines production technology and its purifier |
| CN110923810A (en) * | 2019-12-11 | 2020-03-27 | 包头美科硅能源有限公司 | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon |
-
2021
- 2021-01-08 CN CN202110026220.1A patent/CN112831831A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297481A (en) * | 1988-10-05 | 1990-04-10 | Mitsubishi Metal Corp | Pulling up device for silicon single crystal |
| JPH11130582A (en) * | 1997-08-01 | 1999-05-18 | Motorola Inc | Single crystal ingot and its growth and apparatus therefor |
| CN202201504U (en) * | 2011-08-09 | 2012-04-25 | 山东矿机迈科建材机械有限公司 | Single chuck unpiler |
| JP2013147387A (en) * | 2012-01-20 | 2013-08-01 | Nippon Steel & Sumikin Fine Technology Co Ltd | Single crystal manufacturing apparatus |
| CN105014536A (en) * | 2015-08-14 | 2015-11-04 | 麦斯克电子材料有限公司 | Centering device for crystal bar before barrelling |
| CN205171013U (en) * | 2015-11-17 | 2016-04-20 | 哈尔滨奥瑞德光电技术有限公司 | Modified jumbo size sapphire single crystal growing furnace supporting structure |
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| CN209669391U (en) * | 2019-03-12 | 2019-11-22 | 合智熔炼装备（上海）有限公司 | A kind of monocrystalline orientation hot investment casting furnace clamp device |
| CN110528074A (en) * | 2019-09-26 | 2019-12-03 | 南通晶耀新能源有限公司 | A kind of monocrystalline silicon refines production technology and its purifier |
| CN110923810A (en) * | 2019-12-11 | 2020-03-27 | 包头美科硅能源有限公司 | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon |
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Application publication date: 20210525 |