CN112821880B - Double-circuit double-frequency matching network - Google Patents
Double-circuit double-frequency matching network Download PDFInfo
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- CN112821880B CN112821880B CN202011562335.4A CN202011562335A CN112821880B CN 112821880 B CN112821880 B CN 112821880B CN 202011562335 A CN202011562335 A CN 202011562335A CN 112821880 B CN112821880 B CN 112821880B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
Abstract
The invention belongs to the technical field of communication, and particularly relates to a method for realizing the communication of a mobile phone, which comprises the following steps: a two-way dual-frequency matching network. The invention aims to solve the technical problems of poor inter-band isolation and over-narrow matching bandwidth in the prior art. The invention provides a double-path double-frequency matching network which can simultaneously provide matching from different complex impedances to real impedance under two frequencies and has the characteristics of high isolation between frequency bands and wide matching bandwidth of each frequency band.
Description
Technical Field
The invention belongs to the technical field of communication, and particularly relates to a dual-frequency impedance matching network.
Background
In the prior art, an impedance matching network is a key circuit component of microwave devices and modules such as a microwave low-noise amplifier, a power divider, an antenna and the like, and has the functions of reducing reflection loss, improving power transmission efficiency and improving related electrical performance. Currently, with the continuous evolution of more and more communication systems and mobile communication standards, multiple frequency bands and multiple systems coexist, and microwave radio frequency systems tend to be more and more multi-frequency, that is, a single circuit completes the matching of two frequency bands, so that the microwave radio frequency system has important significance for reducing the size and the cost of a multi-frequency wireless communication system.
Existing dual-frequency impedance matching networks have a variety of solutions, for example:
1. two sections of transmission lines are cascaded to realize the matching from the real number impedance of two frequency points to the real number impedance;
2. three sections of transmission lines are cascaded to realize the matching from complex impedance of two frequency points to real impedance;
3. a section of transmission line is used for converting complex impedance under two different frequencies into two impedance values with equal conjugate, a parallel connection transmission line is added to match a conjugate complex impedance part, and then real impedance is matched with real impedance through a cascade connection transmission line or a coupling line. The matching from different complex impedance to real impedance can be realized at two frequency points;
4. a broadband matching structure is used, and double-frequency matching is realized by adding transmission zero points in a circuit;
5. a dual-frequency impedance matching network is designed on the basis of a dual-passband filter.
The existing dual-frequency matching network has a space for further improvement in terms of circuit size, inter-band separation and matching bandwidth.
Disclosure of Invention
The invention aims to solve the technical problems of poor inter-band isolation and over-narrow matching bandwidth in the prior art. A novel dual-frequency matching network is provided, which has the characteristics of high inter-frequency-band isolation and wide matching bandwidth of each frequency band.
The invention is realized by the following technical scheme: a dual-frequency matching network comprises an input port P1, an output port P2, microstrip transmission lines TL1, TL2, TL3, TL4, TL5, TL6 and TL7. The input port P1 is connected with the microstrip line TL1, the other end of the TL1 is connected with TL2 and TL5, the other end of the TL2 is connected with TL3 and TL4, the other end of the TL5 is connected with TL6 and TL7, and the other ends of the TL4 and the TL7 are connected with the output port P2.
The microstrip line TL1 has a function of converting different complex impedances corresponding to two working frequency points into another two appropriate complex impedances, so as to facilitate network matching in the future.
The microstrip lines TL2, TL3 function at the working frequency f 1 Input impedance Z from TL2 to TL3 IN1 @ f1 is infinity, TL2, TL3 at operating frequency f 1 The lower electrical lengths are all quarter wavelengths.
The microstrip lines TL5, TL6 function at the working frequency f 2 Input impedance Z from TL5 to TL6 IN2 @ f2 is infinite, TL5, TL6 at operating frequency f 2 The lower electrical lengths are all quarter wavelengths.
The microstrip line TL4 is used for combining TL2 and TL3 and completing f together with another branch consisting of TL5, TL6 and TL7 2 Impedance matching of the lower.
The microstrip line TL7 is used for combining TL5 and TL6 and completing f together with another branch consisting of TL2, TL3 and TL4 1 And (4) impedance matching.
The invention relates to a double-frequency matching network with a novel structure, which can simultaneously provide matching from different complex impedances to real impedances under two frequencies. The method is mainly characterized by wide matching bandwidth and high spacing degree between frequency bands.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic diagram of a dual-band matching network according to the present invention
FIG. 2 is a schematic circuit diagram of the dual-band matching network of the present invention applied to an embodiment of a 2.4GHz/3.5GHz dual-band power amplifier
FIG. 3 is a frequency characteristic diagram of the dual-frequency matching network of the present invention applied to the 2.4GHz/3.5GHz dual-frequency power amplifier
Detailed Description
Embodiments of the present invention are described in detail below with reference to the accompanying drawings. The scope of protection of the invention is not limited to the following examples.
As shown in fig. 2, the present embodiment is a power amplifier capable of operating at 2.4GHz and 3.5GHz simultaneously, and the output fundamental wave matching circuit is designed according to the method of the present invention, and the other parts include a bias and stabilization circuit, an input matching network, and a harmonic suppression network designed according to the method known in the art. It can be obtained by simulation that the load impedance to be matched is (10 + j 6) Ω at 2.4GHz and (8-j 3.5) Ω at 3.5 GHz.
The dielectric substrate described in this embodiment has a relative dielectric constant of 3.66 and a thickness of 20mil.
The bias and stabilization circuit consists of a plurality of capacitors, resistors and inductors and is responsible for providing direct current bias for the transistors and inhibiting oscillation. Such design methods are well known in the art.
The input matching network adopts a broadband matching structure formed by cascading four microstrip lines, and provides effective matching for source impedance.
The harmonic suppression network adopts parallel 2.4GHz and 3.5GHz one-eighth-wavelength open-circuit microstrip lines, and microstrip lines with proper lengths are added in front of the microstrip lines to achieve the purpose of matching second harmonics. Such design methods are well known in the art.
The transistor adopts CG2H400010F.
The output fundamental wave matching circuit comprises microstrip transmission lines TL1, TL2, TL3, TL4, TL5, TL6 and TL7.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL1 is 54 omega, and the electrical length is 74 degrees.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL2 is 35 omega, and the electrical length is 90 degrees.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL3 is 27 omega, and the electrical length is 90 degrees.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL4 is 25 omega, and the electrical length is 79 degrees.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL5 is 98 omega, and the electrical length is 90 degrees.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL6 is 37 omega, and the electrical length is 90 degrees.
The characteristic impedance of the output fundamental wave matching circuit microstrip line TL7 is 31 omega, and the electrical length is 180 degrees.
Fig. 3 is a graph showing the simulation result of the frequency characteristics of the output fundamental wave matching according to the present embodiment. Can see its S 11 The frequency ranges below-10 dB reach 300MHz each near two central frequency points and there is better interband rejection between the dual bands.
Claims (2)
1. A dual-frequency matching network comprises an input port P1, an output port P2, microstrip transmission lines TL1, TL2, TL3, TL4, TL5, TL6 and TL7; the input port P1 is connected with the TL1, the other end of the TL1 is connected with the TL2 and the TL5, the other end of the TL2 is connected with the TL3 and the TL4, the other end of the TL5 is connected with the TL6 and the TL7, and the other ends of the TL4 and the TL7 are connected with the output port P2; the dual-frequency matching network has two branches, two working frequencies f of the dual-frequency matching network 1 And f 2 Specific multiple relationships are not required; the TL1 has the function of converting different complex impedances corresponding to two working frequency points into other two proper complex impedances so as to facilitate the matching of a following network; the TL2 and TL3 function at the working frequency f 1 Input impedance Z from TL2 to TL3 IN1@f1 At infinite frequency, TL2, TL3 at operating frequency f 1 The lower electrical length is one quarter wavelength(ii) a The TL5 and TL6 function at the working frequency f 2 Input impedance Z from TL5 to TL6 IN2@f2 To infinity, TL5, TL6 at the operating frequency f 2 The lower electrical lengths are all quarter wavelengths; the TL4 is used for combining TL2 and TL3 and completing f together with another branch consisting of TL5, TL6 and TL7 2 Impedance matching is performed; the TL7 is used for combining TL5 and TL6 and completing f together with another branch consisting of TL2, TL3 and TL4 1 Impedance matching of the lower stage; TL1 characteristic impedance is 54 omega, electrical length is 74 degrees; the characteristic TL2 impedance is 35 omega, and the electrical length is 90 degrees; the characteristic TL3 impedance is 27 omega, and the electrical length is 90 degrees; TL4 characteristic impedance is 25 Ω and electrical length is 79 degrees; TL5 characteristic impedance is 98 Ω, electrical length is 90 degrees; TL6 characteristic impedance is 37 Ω, electrical length is 90 degrees; the TL7 characteristic impedance is 31 Ω and the electrical length is 180 degrees.
2. A dual frequency matching network as claimed in claim 1, wherein: the transmission line in the dual-frequency matching network is combined with different radio frequency substrates to be converted into the actual transmission line structure size of a microstrip line, a strip line, a coplanar waveguide or a slot line.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011562335.4A CN112821880B (en) | 2020-12-25 | 2020-12-25 | Double-circuit double-frequency matching network |
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| CN202011562335.4A CN112821880B (en) | 2020-12-25 | 2020-12-25 | Double-circuit double-frequency matching network |
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| CN112821880A CN112821880A (en) | 2021-05-18 |
| CN112821880B true CN112821880B (en) | 2022-12-23 |
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| CN102956948A (en) * | 2011-08-29 | 2013-03-06 | 黄森 | Novel ultra wide band Wilkinson power divider |
| CN102324623B (en) * | 2011-08-31 | 2014-05-28 | 华南理工大学 | Dual-band biorthogonal phase output power division feed network |
| CN102544675B (en) * | 2012-01-13 | 2014-07-09 | 重庆邮电大学 | Double-frequency unequal power divider |
| CN103427145A (en) * | 2013-04-27 | 2013-12-04 | 卑璐璐 | Novel double-frequency Wilkinson power divider design |
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