CN112821176B - Frequency doubling laser generating device - Google Patents
Frequency doubling laser generating device Download PDFInfo
- Publication number
- CN112821176B CN112821176B CN202110001753.4A CN202110001753A CN112821176B CN 112821176 B CN112821176 B CN 112821176B CN 202110001753 A CN202110001753 A CN 202110001753A CN 112821176 B CN112821176 B CN 112821176B
- Authority
- CN
- China
- Prior art keywords
- frequency
- laser
- amplifier
- signal
- phase modulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10053—Phase control
Abstract
A frequency-doubled laser generating apparatus comprising: single frequency laser ware, phase modulator, laser amplifier, space isolator and the frequency doubling device that connects gradually still include signal generator, and this signal generator produces radio frequency or pseudo-random signal, is used for the drive phase modulator, modulation output phase amplitude is the single-frequency laser of N pi, this single-frequency laser is through after laser amplifier enlargies, the warp the space isolator shoot into the frequency doubling device obtains laser phase modulation amplitude and is 2N pi's single-frequency or narrow linewidth frequency doubling light, and N is the odd number. The phase modulator can realize phase modulation in a wider wavelength range, and meanwhile, single-frequency or narrow-linewidth frequency doubling light can be obtained by high-power less-frequency fundamental frequency light obtained by the laser amplifier through frequency doubling, so that the structure has the advantages of simplicity, flexible design and the like, a new technical scheme is provided for high-power and high-stability single-frequency or narrow-linewidth laser frequency doubling, and the phase modulator has higher practical value and application prospect.
Description
Technical Field
The invention relates to the field of photoelectric technology, in particular to a phase-modulated frequency doubling laser generating device for fundamental frequency light, which is used for generating frequency doubling laser with high spectral intensity.
Background
Visible light and ultraviolet laser have important applications in the fields of display, quantum information technology, laser remote sensing, astronomy and geophysical, biomedical imaging and treatment, industrial processing, cold atom and the like. The infrared laser frequency doubling is the most common method, and the laser cavity external frequency doubling technology mainly comprises single-pass frequency doubling and resonant frequency doubling, and is an effective way for obtaining high-power visible light and ultraviolet laser. In laser frequency doubling, to achieve high-efficiency nonlinear conversion efficiency, the fundamental frequency light is required to be single-frequency or narrow-linewidth laser. Along with the power improvement of single-frequency and narrow-linewidth lasers, especially the power improvement of optical fiber lasers, various nonlinear effects are easily caused, especially Stimulated Brillouin Scattering (SBS), the power of fundamental frequency optical fiber lasers is greatly limited, and therefore the power of visible light and ultraviolet lasers is limited. Currently, in the method for increasing the power of single-frequency and narrow-linewidth laser, the phase modulation technique is widely applied due to many advantages, and generally includes periodic signal modulation (e.g., phase modulation of signals such as sine wave, triangular wave, square wave, and pseudo-random code) and non-periodic signal modulation (e.g., white noise phase modulation). However, in the phase modulation process, the line width of the single-frequency or narrow-line-width laser needs to be broadened and then amplified, so that the narrow-line-width characteristic of the laser is damaged to a certain extent, the line width of the laser is further broadened after frequency doubling, and the high-power single-frequency or narrow-line-width frequency-doubled laser cannot be obtained.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a novel frequency doubling laser generation device. Through phase modulation of any signal, the phase of the single-frequency fundamental frequency light is changed between 0 and odd multiples of pi, the low-frequency fundamental frequency light is generated, and the high-power single-frequency doubled light with the phase changed between 0 and odd multiples of 2 pi is obtained through laser amplification and frequency doubling.
The concrete technical scheme of the invention is as follows:
a frequency-doubled laser generating apparatus comprising: the single frequency laser, phase modulator, laser amplifier, space isolator and the frequency doubling device that connect gradually, its characteristics lie in: the laser phase modulation device further comprises a signal generator, the signal generator generates a driving signal and is used for driving the phase modulator to modulate single-frequency laser, less-frequency laser with the phase amplitude being N pi is output, the less-frequency laser is amplified by the laser amplifier and then is emitted into the frequency doubling device through the space isolator, single-frequency or narrow-line-width frequency doubling light with the laser phase modulation amplitude being 2N pi is obtained, and N is an odd number.
The single-frequency laser is a rare earth doped solid laser, a solid Raman laser, a fiber Raman laser, a Distributed Feedback (DFB) semiconductor laser, an external cavity semiconductor (ECDL) laser, a Distributed Feedback (DFB) fiber laser or a Distributed Bragg Reflector (DBR) fiber laser, and the like, and the line width of the generated single-frequency laser is less than 120 MHz.
The single-frequency laser comprises a single-frequency laser seed, a driving circuit, a power supply and an isolator.
The phase modulator is an electro-optic phase modulator or a space electro-optic phase modulator containing a fiber tail;
the crystal used by the phase modulator is lithium niobate doped with magnesium oxide (MgO: LiNbO3), lithium niobate (LiNbO3), lithium tantalate (LiTaO3), potassium titanyl phosphate (KTP), potassium dideuterium phosphate (KDP) and the like.
The signal generator generates a driving signal, and the output amplitude and frequency of the driving signal can be adjusted;
the driving signal is a pulse signal, a square wave signal, a pseudo-random code signal, or any signal with amplitude changing along with time step type change, and the like;
the signal generator generates a driving signal with the frequency range of 0-100 GHz or the code rate of 0-500 Gbps, and the peak-to-peak value is not more than 1 kV;
the phase modulator is driven by the signal generator, adjusts the output power and frequency (or code rate) of the signal generator, and can respectively change the modulation depth and frequency interval of the low-frequency fundamental frequency light;
taking the square wave signal modulation condition as an example, the signal generator drives the phase modulator to perform phase modulation on the single-frequency seed laser, and the formula is satisfied:
Einc＝E0exp{i[ωt+βsquare(Ωt)]} (1)
wherein E isincFor incident single-frequency fundamental optical field intensity, E0The amplitude of incident single-frequency fundamental frequency light is shown, beta is phase modulation depth, square (omega t) is a square wave function, omega is the angular frequency of laser, and omega is phase modulation frequency. By varying the output power and frequency (or code rate) of the signal generator, the phase modulation depth β and modulation frequency Ω, respectively, can be varied.
The laser amplifier comprises an isolator and a laser amplifier which are connected in sequence, or a multi-stage cascade isolator and a laser amplifier.
The amplifier is a rare earth doped solid amplifier, a solid Raman amplifier, a rare earth doped optical fiber amplifier or an optical fiber Raman amplifier.
The space isolator prevents the amplifier from being damaged due to the fact that the output laser is reflected back to the amplifier.
The frequency doubling device adopts intracavity frequency doubling or extracavity frequency doubling.
The extra-cavity frequency doubling comprises: a single-pass frequency doubling device or a resonant frequency doubling device.
The frequency doubling crystal in the frequency doubling device is Periodically Polarized Lithium Niobate (PPLN), Periodically Polarized Stoichiometric Lithium Tantalate (PPSLT), periodically polarized potassium titanyl phosphate crystal (PPKTP), beta-barium metaborate crystal (BBO), lithium triborate crystal (LBO), bismuth borate crystal (BIBO), lithium cesium borate Crystal (CLBO) or potassium titanyl phosphate crystal (KTP).
Compared with the prior art, the invention has the beneficial effects that:
1) the single-frequency fundamental frequency light is subjected to phase modulation to obtain multi-frequency fundamental frequency light, so that the laser power density is reduced, the SBS effect in the optical fiber amplifier is inhibited, and the output laser power is stable; the multi-frequency fundamental frequency light obtained by phase shift modulation of odd multiples of pi is frequency-doubled, so that single-frequency or narrow linewidth frequency-doubled light can be generated, the influence of a laser amplifier on the linewidth of the frequency-doubled light caused by SBS can be avoided, and the frequency-doubled linewidth characteristic of the single-frequency laser before phase modulation is kept.
2) The method comprises the steps that a driving signal with modulation amplitude being odd times of pi is adopted to perform phase modulation on single-frequency fundamental frequency light, frequency multiplication is performed after amplification to obtain high-power single-frequency multiplication light, a complex active adjustment system can be avoided, and therefore the device is simplified, and the low-frequency fundamental frequency light can meet the conditions of single-pass or resonant frequency multiplication by adjusting the frequency or code rate of a signal generator of a single-frequency fundamental frequency light phase modulator; the amplitude of the signal generator of the fundamental frequency light phase modulator is adjusted, so that the modulation depth of the few-frequency fundamental frequency light can be changed, the power spectral density of the single-frequency laser can be reduced, the signal phase modulator has the characteristics of simple structure, flexibility in modulation, high output power and the like, a new scheme is provided for the single-frequency laser frequency doubling technology with high power and high stability, and the signal phase modulator has important practical value and wide application prospect.
Drawings
FIG. 1 is a schematic diagram of a high power single-frequency and frequency-doubled laser generator according to the present invention;
FIG. 2 is a schematic diagram of a laser amplifier according to the present invention;
FIG. 3 is a schematic diagram of a frequency doubling structure of a frequency doubling apparatus provided by the present invention;
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The invention provides a method for generating high-power single-frequency doubling laser in order to further improve the output power of the single-frequency or narrow-linewidth frequency doubling laser in the prior art. The principle of the method is as follows: the single-frequency fundamental light is subjected to phase modulation to generate the low-frequency fundamental light with the phase modulation amplitude being odd times of pi, and the low-frequency fundamental light is subjected to laser amplification and frequency doubling to obtain the high-power single-frequency doubled light.
An example of a specific implementation of the above method is given below.
The first embodiment is as follows:
the single-frequency laser 1 is a single-frequency Distributed Feedback (DFB) optical fiber laser with the line width less than 100MHz and the central wavelength is 1064 nm; the phase modulator 2 adopts an electro-optic phase modulator with a fiber tail, the signal generator 3 adopts an arbitrary wave signal source to generate a square wave signal, the frequency is 100MHz, and the output amplitude is 6V; the laser amplifier 4 is a rare earth doped fiber laser amplifier, the gain fiber of the laser amplifier is an ytterbium doped fiber and consists of a primary isolator 4.1, a primary ytterbium doped fiber amplifier 4.2, a secondary isolator 4.3, a secondary ytterbium doped fiber amplifier 4.4, … …, (N + 1)/2-stage isolator 4.N, (N + 1)/2-stage ytterbium doped fiber amplifier 4.N +1 which are connected in sequence, and N is an odd number; the frequency doubling device 6 is a single-pass frequency doubling device, and is composed of an optical lens 6.1, a periodically polarized stoichiometric ratio lithium tantalate (PPSLT) frequency doubling crystal 6.2, an optical lens and a spectroscope 6.1, as shown in fig. 3.
Example two:
the single-frequency laser 1 is a single-frequency external cavity semiconductor (ECDL) laser with the line width less than 120MHz, has the central wavelength of 1178nm and can load external radio-frequency signals; the phase modulator 2 is an electro-optical phase modulator with a fiber tail; the signal generator 3 adopts an arbitrary wave signal source to generate a square wave signal with the frequency of 1.71GHz and the output amplitude of 10V; the laser amplifier 4 is a fiber Raman laser amplifier, the gain fiber of the laser amplifier is a phosphor fiber, and the laser amplifier comprises an isolator of the phosphor fiber amplifier and the phosphor fiber amplifier; the frequency doubling device 6 is a resonance frequency doubling device and comprises an endoscope and a digital lock cavity servo system, a 25MHz radio frequency signal is loaded on a single-frequency laser, a triangular wave is output and amplified by a high-voltage amplification module, the piezoelectric ceramic PZT is controlled, the frequency of the triangular wave is integral multiple of 50Hz, and lithium triborate (LBO) crystal is formed.
Example three:
the single-frequency laser 1 is a Distributed Bragg Reflector (DBR) single-frequency fiber laser with the line width smaller than 10MHz, and the central wavelength is 1018 nm; the phase modulator 2 is a space electro-optic phase modulator; the signal generator 3 is a pseudo random code signal source and generates 27-1 pseudo-random signal, pseudo code rate 2Gbps, output amplitude 8V; the laser amplifier 4 is a rare earth doped solid laser amplifier, the gain of the laser amplifier is ytterbium-doped yttrium aluminum garnet (Yb: YAG) crystal, and the laser amplifier is composed of a primary isolator 4.1, a primary Yb: YAG amplifier 4.2, a secondary isolator 4.3, a secondary Yb: YAG amplifier 4.4, a tertiary isolator 4.5 and a tertiary Yb: YAG amplifier 4.6 which are connected in sequence; the frequency doubling device 6 is a single-pass frequency doubling device and consists of an optical lens, a spectroscope 6.1 and a frequency doubling crystal lithium triborate crystal (LBO) 6.2.
Example four:
the single-frequency laser 1 is a single-frequency Distributed Feedback (DFB) semiconductor laser with the line width less than 0.5MHz, the central wavelength can be 1560nm, and an external radio-frequency signal is loaded; phase modulator2 is an electro-optic phase modulator with a fiber tail; the signal generator 3 is a pseudo random code signal source and generates 23-1 pseudo-random signal, pseudo code rate 22Gbps, output amplitude 10V; the laser amplifier 4 is a solid Raman laser amplifier, has only one-stage amplification and comprises an isolator and an amplifier; the frequency doubling device 6 is a resonance frequency doubling device, 6.1 is an endoscope and a simulation lock cavity servo system, a radio frequency signal of 12.5MHz is loaded on a single-frequency laser, a triangular wave is output and amplified by a high-voltage amplification module, the piezoelectric ceramic PZT is controlled, the frequency of the triangular wave is 100Hz, and the frequency doubling crystal 6.2 is a lithium triborate Crystal (CLBO).
Claims (8)
1. A frequency-doubled laser generating apparatus comprising: single-frequency laser (1), phase modulator (2), laser amplifier (4), space isolator (5) and frequency doubling device (6) that connect gradually, its characterized in that: still include signal generator (3), the drive signal that this signal generator (3) produced is used for the drive phase modulator (2) modulate single-frequency laser, output phase amplitude is the few frequency laser of N pi, this few frequency laser warp laser amplifier (4) enlargies the back, the warp spatial isolation ware (5) inject into frequency doubling device (6), obtain laser phase modulation amplitude and be 2N pi's single-frequency or narrow linewidth frequency doubling light, N is the odd number.
2. The frequency-doubled laser generating apparatus according to claim 1, wherein the single-frequency laser (1) is a rare-earth-doped solid-state laser, a solid-state raman laser, a Distributed Feedback (DFB) semiconductor laser, an external cavity semiconductor (ECDL) laser, a Distributed Feedback (DFB) fiber laser, or a Distributed Bragg Reflector (DBR) fiber laser, and a line width for generating single-frequency laser is less than 120 MHz.
3. The apparatus according to claim 1, wherein said phase modulator (2) is a pigtailed electro-optic phase modulator or a spatial electro-optic phase modulator.
4. The apparatus for generating frequency-doubled laser according to claim 1, wherein the peak-to-peak value of the signal generated by the signal generator (3) is not greater than 1kV, the modulation depth of the low-frequency fundamental light can be changed by adjusting the output power of the signal generator (3), the frequency or code rate of the signal generator (3) can be adjusted, and the frequency interval of the low-frequency fundamental light can be changed.
5. The frequency-doubled laser generating device according to claim 1 or 4, wherein the phase-modulated driving signal of the signal generator (3) is a pulse signal, a square wave signal, a pseudo-random code signal, or any signal with amplitude varying in a time step type.
6. The apparatus according to claim 1, wherein the laser amplifier (4) is a rare-earth doped solid-state amplifier, a solid-state raman amplifier, a rare-earth doped fiber amplifier, or a fiber raman amplifier.
7. A frequency-doubled laser generator according to claim 1, wherein the frequency doubling means (6) employs intracavity frequency doubling or extracavity frequency doubling.
8. The frequency-doubled laser generator according to claim 1 or 7, wherein the frequency-doubled crystal in the frequency-doubled device (6) is Periodically Poled Lithium Niobate (PPLN), Periodically Poled Stoichiometric Lithium Tantalate (PPSLT), periodically poled potassium titanyl phosphate crystal (PPKTP), β -barium metaborate crystal (BBO), lithium triborate crystal (LBO), bismuth borate crystal (BIBO), cesium lithium borate Crystal (CLBO), or potassium titanyl phosphate crystal (KTP).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110001753.4A CN112821176B (en) | 2021-01-04 | 2021-01-04 | Frequency doubling laser generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110001753.4A CN112821176B (en) | 2021-01-04 | 2021-01-04 | Frequency doubling laser generating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112821176A CN112821176A (en) | 2021-05-18 |
| CN112821176B true CN112821176B (en) | 2022-05-31 |
Family
ID=75856855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110001753.4A Active CN112821176B (en) | 2021-01-04 | 2021-01-04 | Frequency doubling laser generating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112821176B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114614331A (en) * | 2021-12-09 | 2022-06-10 | 国科大杭州高等研究院 | High-power sum frequency laser generation method and system and phase modulation method used by same |
| CN114300937A (en) * | 2021-12-16 | 2022-04-08 | 成都天奥电子股份有限公司 | Narrow linewidth frequency doubling laser based on optical microcavity feedback injection locking |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123926A (en) * | 2017-05-05 | 2017-09-01 | 中国科学技术大学 | The production method of super-narrow line width, tunable high power laser system and laser |
| CN112103758A (en) * | 2020-08-07 | 2020-12-18 | 中国科学院上海光学精密机械研究所 | High-power frequency doubling single-frequency laser generating device for phase modulation and demodulation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10520790B2 (en) * | 2015-01-06 | 2019-12-31 | Ipg Photonics Corporation | Ultra-high power single mode green fiber laser operating in continuous wave and quasi-continuous wave regimes |
| CN111564750B (en) * | 2020-05-18 | 2021-05-07 | 中国人民解放军国防科技大学 | System and method for inhibiting stimulated Brillouin scattering effect in high-power narrow-linewidth optical fiber laser amplifier |
-
2021
- 2021-01-04 CN CN202110001753.4A patent/CN112821176B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107123926A (en) * | 2017-05-05 | 2017-09-01 | 中国科学技术大学 | The production method of super-narrow line width, tunable high power laser system and laser |
| CN112103758A (en) * | 2020-08-07 | 2020-12-18 | 中国科学院上海光学精密机械研究所 | High-power frequency doubling single-frequency laser generating device for phase modulation and demodulation |
Non-Patent Citations (1)
| Title |
|---|
| Resonant frequency doubling of phase-modulation-generated few-frequency fiber laser;Xin Zeng, et al.;《Optics Letters》;20200901;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112821176A (en) | 2021-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8630320B2 (en) | Method and apparatus for a hybrid mode-locked fiber laser | |
| US5832009A (en) | Laser light emitting device, laser beacon device and laser imager display device | |
| US5894489A (en) | Solid-state laser system for color picture projection | |
| CN112103758B (en) | High-power frequency doubling single-frequency laser generating device for phase modulation and demodulation | |
| CN112821176B (en) | Frequency doubling laser generating device | |
| CN114709707B (en) | High-power sum frequency laser generation method and system and phase modulation method thereof | |
| US9001853B2 (en) | Internal optical mixer pulsed at larmor frequency | |
| CN111725693B (en) | High-power multi-single-frequency fiber laser frequency doubling system and method | |
| US20070237191A1 (en) | Devices for high power, high-repetition rate, broadly tunable coherent radiation, and its applications | |
| US20030112494A1 (en) | Hybrid chirped pulse amplification system | |
| CN101964498A (en) | Seed injection ArF excimer laser device | |
| US10642127B1 (en) | Single Crystal optical parametric amplifier | |
| US11482834B1 (en) | High power long wavelength pulsed IR laser system with highly variable pulse width and repetition rate | |
| RU128020U1 (en) | OPTICAL SYSTEM FOR PRODUCING POWERFUL LASER RADIATION MODULATED IN THE HIGH FREQUENCY RANGE | |
| CN116417908A (en) | High-power difference frequency laser generation method and system | |
| US20230387646A1 (en) | Pulsed laser with temporal coherence control | |
| CN117578170A (en) | Ultraviolet continuous laser generating system with full single-pass structure | |
| Champert et al. | Deep UV, tandem harmonic generation using kW peak power Yb fibre source | |
| EP2317377B1 (en) | High-power electromagnetic sum frequency generator system | |
| Antipov et al. | Phase conjugator of the light beams based on Nd: YAG rod with the reciprocal feedback. | |
| Xu et al. | Frequency-Tripling OEO based on Frequency Multiplication in Saturated Low Phase Noise Amplifier | |
| Henrich et al. | Concepts and technologies of advanced RGB sources | |
| Murray et al. | Fibre-based Sources from the UV to Mid-Infrared | |
| Baudisch et al. | 100 kHz, femtosecond, 4-10 μm tunable, AgGaSe2-based OPA pumped by a CPA Tm: fiber laser system | |
| Innerhofer et al. | Powerful RGB laser source for projection displays based on a passively mode-locked thin disk laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |