CN112820796A - Solar cell preparation method and solar cell - Google Patents
Solar cell preparation method and solar cell Download PDFInfo
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- CN112820796A CN112820796A CN202011619286.3A CN202011619286A CN112820796A CN 112820796 A CN112820796 A CN 112820796A CN 202011619286 A CN202011619286 A CN 202011619286A CN 112820796 A CN112820796 A CN 112820796A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- 238000005520 cutting process Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 49
- 238000004227 thermal cracking Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 64
- 230000008569 process Effects 0.000 description 12
- 238000010248 power generation Methods 0.000 description 9
- 238000005336 cracking Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010344 co-firing Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver aluminum Chemical compound 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell preparation method and a solar cell piece, and relates to the technical field of solar cell processing. After a silicon wafer is cut and a damage layer is removed, and before texturing is carried out on the surface of the silicon wafer, a focused laser beam is focused and scanned inside the silicon wafer, so that a modified layer and holes are formed inside the silicon wafer along the scanning direction of a laser focus. According to the solar cell preparation method and the solar cell, provided by the invention, the prepared solar cell has the advantages that the section is neat, no micro-cracks or cutting grooves exist, and no heat influence area exists.
Description
Technical Field
The invention relates to the technical field of solar cell processing, in particular to a solar cell preparation method and a solar cell piece.
Background
The development of photovoltaic technology has promoted the growth of the industries related to solar cell strings, and the demand for solar cell sheets is increasing. In the production process of solar cell sheets, large cell sheets need to be cut to form the required cell sheet size.
At present, a solar cell is generally cut by adopting a laser scribing mode, and the following problems exist: the heat affected zone at the cutting line is large, so that the power generation efficiency of the cell is influenced; the cutting grooves exist, and the groove body loss caused by the cutting grooves causes the reduction of the power generation area of the cell; microcracks exist at the cutting grooves, and hidden cracks are easy to generate.
Therefore, the design of a new battery piece preparation or cutting processing method is significant.
Disclosure of Invention
In order to solve the defects of the prior art, the main object of the present invention is to provide a method for manufacturing a solar cell and a solar cell, which can make the cross section of the manufactured solar cell regular without microcracks and cutting grooves and without heat-affected zone.
In order to achieve the purpose, the technical scheme of the invention is as follows:
after a silicon wafer is cut and a damage layer is removed, and before texturing is carried out on the surface of the silicon wafer, focusing and scanning are carried out on the inside of the silicon wafer through a focused laser beam, so that a modified layer and holes are formed in the inside of the silicon wafer along the scanning direction of a laser focus.
Optionally, the method comprises the following steps:
s1, cutting the silicon wafer and removing the damaged layer;
s2, focusing and scanning the inside of the silicon wafer through the focused laser beam to form a modified layer and a hole inside the silicon wafer along the scanning direction of the laser focus;
s3, texturing the surface of the silicon wafer, preparing PN junctions, and etching and cleaning the edges of the peripheral surface of the silicon wafer;
s4, depositing an antireflection layer on the surface of the silicon wafer;
s5, preparing electrodes on the silicon wafer, and making the silicon wafer into a battery piece;
and S6, testing the battery piece.
Optionally, the method further comprises the following steps:
and S7, cutting the battery piece, and cutting the battery piece along the modified layer by focusing the thermal cracking laser and then scanning along the modified layer.
Optionally, in S2, the focused laser beam is any one of a 1046-1342nm pulse laser, a nanosecond laser or a picosecond laser.
Alternatively, in S2, the number of times of the focused laser beam scanning is selected according to the thickness of the desired modified layer.
Optionally, in S2, the focused laser beam is scanned one or more times.
Optionally, in S7, the thermal cracking laser adopts 1050-1090nm continuous laser or 900-950nm semiconductor laser.
Optionally, the diameter of the focused spot of the thermal laser is 1-2 mm.
Alternatively, in S5, the electrode is prepared by screen printing, and then the electrode is formed into ohmic contact by co-firing.
The invention also provides a solar cell, and the solar cell is prepared and cut by adopting the solar cell preparation method.
According to the preparation method of the solar cell, in the preparation process, after the silicon wafer is cut and the damage layer is removed, the focusing laser beam is used for focusing and scanning in the silicon wafer, so that the modified layer and the hole are formed in the silicon wafer along the laser focus scanning direction. Namely, in the process of preparing a silicon wafer of a solar cell, a laser invisible cutting process is added so as to prefabricate a modified layer and holes in the silicon wafer; when the silicon wafer is made into a large cell (the large cell is a cell which is prepared from a complete silicon wafer and is not cut), laser scanning can be performed in a hot cracking mode, so that the modified layer and the holes are cracked under the action of thermal stress, and the cutting of the cell is completed.
The invention provides a solar cell preparation method, which creatively divides a complete laser invisible cutting process into two different procedures: namely, the working procedure of prefabricating modified layers and holes and the working procedure of heat cracking. The working procedures of prefabricating the modified layer and the hole are advanced to the working procedures of cutting the silicon wafer and removing the damaged layer, and the hot cracking working procedure is arranged after the preparation process of the complete battery piece is finished (the preparation process does not comprise the cutting of the battery piece), so that a series of problems caused by a cutting groove and a heat affected zone in the traditional battery piece cutting process can be avoided.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for manufacturing a solar cell according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a modified layer prepared from a silicon wafer according to the method for preparing a solar cell shown in FIG. 1;
FIG. 4 is a schematic structural view of a pre-fabricated modified layer inside a silicon wafer according to the method for manufacturing a solar cell shown in FIG. 1;
FIG. 5 is a schematic side view of an internally pre-fabricated modified layer of a silicon wafer according to the solar cell fabrication method shown in FIG. 1;
fig. 6 is a schematic structural view of a modified layer and holes inside a silicon wafer according to the method for manufacturing a solar cell shown in fig. 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The inventors of the present invention found that: when a traditional solar cell is cut, a cutting groove is inevitably generated, and the groove body loss caused by cutting the groove reduces the power generation area of the cell; heat influence areas are formed on two sides of the cutting groove, and the power generation efficiency of the battery piece is influenced; microcracks exist at the cutting grooves, and hidden cracks are easy to generate. The inventors have conducted a large number of experiments and found that the problem of the heat affected zone generated during cutting can be effectively avoided by disposing the cutting step before the battery sheet preparation step. Based on the technical scheme, the invention is provided.
As shown in fig. 1 to 6, in the method for manufacturing a solar cell provided by the present invention, a step of preparing a modified layer is added in the process of manufacturing a solar cell. After the silicon wafer 1 is cut and the damaged layer is removed, and before the surface of the silicon wafer is subjected to texturing, focusing and scanning are carried out inside the silicon wafer 1 through the focused laser beam 2, so that the modified layer 11 and the hole 12 are formed inside the silicon wafer 1 along the laser focus scanning direction.
Specifically, as shown in fig. 1, the method for manufacturing a solar cell provided by the present invention includes the following steps:
s1, cutting the silicon wafer 1 and removing the damaged layer;
s2, focusing and scanning the silicon wafer 1 by focusing the laser beam 2, so that the modified layer 11 and the hole 12 are formed in the silicon wafer 1 along the laser focus scanning direction;
s3, texturing the surface of the silicon wafer 1, preparing PN junctions, and etching and cleaning the edge of the peripheral surface of the silicon wafer 1;
s4, depositing an antireflection layer on the surface of the silicon wafer 1;
s5, preparing electrodes on the silicon wafer 1 to make the silicon wafer into a battery piece;
and S6, testing the battery piece.
The preparation processes of the solar cell are well known to those skilled in the art, and are S1, S3, S4, S5 and S6. For example, in S1, silicon wafer 1 is cut into: and cutting the silicon ingot into silicon wafers. The damaged layer is removed as follows: and removing a large number of surface defects of the silicon wafer 1 during the cutting process by alkali or acid etching. In S3, texturing on the surface of the silicon wafer 1 is: the surface of the silicon chip 1 is uneven and rough by acid or alkali corrosion to form diffuse reflection, so that the loss of solar energy directly irradiating the surface of the silicon chip 1 is reduced; the preparation of PN junction is: forming a PN junction by a diffusion method; the reason why the peripheral surface of the silicon wafer 1 is subjected to edge etching and cleaning is that a diffusion layer is also formed on the peripheral surface of the silicon wafer 1 in the diffusion process of preparing the PN junction of the silicon wafer 1. The peripheral diffusion layer is removed to form a short-circuiting ring for the upper and lower electrodes of the battery. In S4, depositing an antireflection layer on the surface of the silicon wafer 1; the antireflection layer is used for reducing the reflection of sunlight on the surface of the cell. S5, preparing electrodes on the silicon wafer 1, making the silicon wafer into a battery piece, preparing the electrodes by adopting a screen printing method, and then forming ohmic contact on the electrodes by co-firing. Namely, a screen printing method is adopted, silver paste aluminum paste (silver aluminum paste) is printed on the front surface and the back surface of the solar cell through a printer and a template special for cell preparation so as to form positive and negative electrode leads, then, a sintering process is carried out, so that metal contact is formed by co-firing, namely ohmic contact of upper and lower electrodes is formed, and the silicon wafer 1 is made into a silicon cell. And S6, testing the battery pieces, namely classifying the manufactured battery pieces through testing. The more detailed processes of S1, S3, S4, S5 and S6 are not described in detail herein.
According to the solar cell preparation method provided by the invention, particularly, a part of procedures of a laser invisible cutting process are added between S1 and S3. That is, the laser stealth dicing process is divided into two separate processes S2 and S7. In S2, the focusing laser beam 2 is focused and scanned inside the silicon wafer 1, so that the modified layer 11 and the hole 12 are formed inside the silicon wafer 1 along the laser focus scanning direction. And S7, focusing the thermal cracking laser and scanning along the modified layer 11 to crack the battery piece along the modified layer 11.
Specifically, in S2, the focused laser beam 2 is focused and scanned inside the silicon wafer 1, so that when the modified layer 11 and the hole 12 are formed inside the silicon wafer 1 along the laser focus scanning direction, the focused laser beam 2 adopts any one of a 1046-. The focused laser beam 2 is an ultrashort pulse laser which has penetrability to the material, the laser penetrates through the surface of the material and is focused in the material, and the material at the focus position is modified under the action of high-density energy to generate tiny holes. This modification has a sufficient penetration depth without damaging the surface of the silicon wafer 1 and without generating swarf. Of course, other lasers or laser beams commonly used in laser stealth dicing processes may also be used.
When the focused laser beam 2 is focused and scanned inside the silicon wafer 1, the number of times of scanning by the focused laser beam 2 may be one or more. The number of times of scanning of the focused laser beam is selected according to the desired thickness of the modified layer 11 and is in a proportional relationship with the thickness of the modified layer 11.
As shown in fig. 3-6, which is a schematic diagram of the silicon wafer 1 scanned by the focused laser beam 2, the focused laser beam 2 is focused inside the silicon wafer 1. A modified layer 11 and a hole 12 are formed inside the silicon wafer 1 along the scanning direction of the laser focus. The modified layer 11 and the holes 12 are not limited to one, and may be selected according to the requirement, for example, the modified layer 11 and the holes 12 are distributed in a grid shape. The modified layer 11 and the holes 12 are located inside the silicon wafer 1, so that the subsequent cell preparation process is not affected, and the power generation efficiency and the power generation area of the prepared cell are not affected.
The preparation method of the solar cell comprises the steps of S1-S6, and the uncut solar cell piece can be prepared. The solar cell sheet can be prepared by the existing preparation process (including the steps S1, S3, S4, S5 and S6), and has the same functions and effects. The difference is that the solar cell prepared by the method of the invention has the modified layer 11 and the holes 12 with the shapes preset according to the needs. Because the modified layer 11 and the holes 12 are generated before the surface of the cell is subjected to texturing and PN junction diffusion, the existence of the modified layer 11 and the holes 12 does not affect the power generation area of the prepared solar cell.
In another embodiment, the method for manufacturing a solar cell includes steps S1-S7, that is, after an uncut solar cell is manufactured, a thermal cracking process is added, and a thermal cracking laser is focused and then scanned along the modified layer 11 to crack the solar cell along the modified layer 11, so that the solar cell is cut into a desired size. Wherein, the thermal cracking laser adopts 1050 and 1090nm continuous laser or 900 and 950nm semiconductor laser. The diameter of the focusing light spot of the thermal cracking laser is 1-2 mm. The energy density of the thermal cracking laser is small, and the temperature of the focusing spot of the thermal cracking laser is low (compared with the laser scribing process in the prior art), so that a heat affected zone is not generated on the surface of the battery piece.
According to the preparation method of the solar cell, in the preparation process, after the silicon wafer is cut and the damage layer is removed, the focusing laser beam is used for focusing and scanning in the silicon wafer, so that the modified layer and the hole are formed in the silicon wafer along the laser focus scanning direction. Namely, in the process of preparing a silicon wafer of a solar cell, a laser invisible cutting process is added so as to prefabricate a modified layer and holes in the silicon wafer; when the silicon wafer is made into a large battery piece, laser scanning can be carried out in a thermal cracking mode, so that the modified layer and the holes are cracked under the action of thermal stress, and the battery piece is cut.
The invention provides a solar cell preparation method, which creatively divides a complete laser invisible cutting process into two different procedures: namely, the working procedure of prefabricating modified layers and holes and the working procedure of heat cracking. The working procedure of prefabricating the modified layer and the holes is advanced to the working procedure of cutting the silicon wafer and removing the damaged layer, and the hot cracking working procedure is arranged after the preparation process of the complete battery piece is completed (the preparation process does not comprise the cutting of the battery piece), so that a series of problems caused by a cutting groove and a heat affected zone when the traditional battery piece cutting process or the laser invisible cutting process is adopted to cut the battery piece after the battery piece is manufactured can be avoided.
After the solar cell is split by the thermal cracking process of S7, the preparation method of the solar cell provided by the invention has the following advantages:
1. the section is neat, has no microcrack, can not generate hidden crack, and has high bending strength.
2. No dust pollution.
3. The groove loss is avoided, the groove is not cut, and the effective power generation area of the battery is not reduced.
4. Without the heat affected zone, the cell does not decrease the power generation efficiency due to heat loss.
The invention also provides a solar cell slice which is prepared by the solar cell preparation method and cut. Namely, the invention also provides a solar cell, which is internally provided with a modifying layer and holes in a preset shape. The predetermined shape may be a bar, a grid, etc.
According to the solar cell provided by the invention, the modified layer and the holes in the solar cell can enable the solar cell to realize thermal cracking and splitting only through thermal cracking laser scanning at a lower temperature, so that the splitting process is simplified, and the solar cell has the advantages of neat section, no microcrack, no groove loss and no heat affected zone after splitting.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A preparation method of a solar cell is characterized in that after a silicon wafer is cut and a damage layer is removed, and before texturing is conducted on the surface of the silicon wafer, a focused laser beam is focused and scanned inside the silicon wafer, so that a modified layer and holes are formed inside the silicon wafer along the laser focus scanning direction.
2. The method for preparing a solar cell according to claim 1, comprising the steps of:
s1, cutting the silicon wafer and removing the damaged layer;
s2, focusing and scanning the inside of the silicon wafer through the focused laser beam to form a modified layer and a hole inside the silicon wafer along the scanning direction of the laser focus;
s3, texturing the surface of the silicon wafer, preparing PN junctions, and etching and cleaning the edges of the peripheral surface of the silicon wafer;
s4, depositing an antireflection layer on the surface of the silicon wafer;
s5, preparing electrodes on the silicon wafer, and making the silicon wafer into a battery piece;
and S6, testing the battery piece.
3. The method of claim 2, further comprising the steps of:
and S7, cutting the battery piece, and cutting the battery piece along the modified layer by focusing the thermal cracking laser and then scanning along the modified layer.
4. The method for preparing a solar cell according to claim 2, wherein in S2, the focused laser beam is any one of a 1046-1342nm pulse laser, a nanosecond laser or a picosecond laser.
5. The method of claim 2, wherein in S2, the number of times of the focused laser beam scanning is selected according to the thickness of the required modified layer.
6. The method for manufacturing a solar cell according to claim 5, wherein the number of times of scanning the focused laser beam is one or more in S2.
7. The method for preparing a solar cell according to claim 3, wherein in S7, 1050-1090nm continuous laser or 900-950nm semiconductor laser is used as the thermal cracking laser.
8. The method of claim 7, wherein the thermal laser has a focused spot of 1-2mm in diameter.
9. The method of claim 2, wherein in the step S5, the electrodes are prepared by screen printing and then are co-fired to form ohmic contacts.
10. A solar cell sheet, wherein the solar cell is cut by the method of any one of claims 1 to 9, and the solar cell sheet has a modified layer and holes with predetermined shapes inside.
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| CN202011619286.3A CN112820796A (en) | 2020-12-31 | 2020-12-31 | Solar cell preparation method and solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114188438A (en) * | 2021-11-22 | 2022-03-15 | 苏州腾晖光伏技术有限公司 | Passivated contact crystalline silicon battery without edge cutting loss and preparation method thereof |
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- 2020-12-31 CN CN202011619286.3A patent/CN112820796A/en active Pending
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