CN112820697A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- CN112820697A CN112820697A CN202011622377.2A CN202011622377A CN112820697A CN 112820697 A CN112820697 A CN 112820697A CN 202011622377 A CN202011622377 A CN 202011622377A CN 112820697 A CN112820697 A CN 112820697A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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Abstract
The application discloses a wafer processing method, which comprises the following steps: the front surface of the wafer without the film is subjected to laser grooving treatment, the back surface of the wafer is subjected to thinning treatment, the back surface of the wafer is subjected to laser modification cutting treatment, the back surface of the wafer is subjected to bonding cutting tape treatment, and the wafer is treated according to the cutting tape so as to be separated into a plurality of chips. Through carrying out laser grooving treatment on the front surface of the wafer without the film, compared with the prior art, the laser grooving treatment is carried out on the front surface of the wafer with the film, the process step of firstly installing the iron ring on the wafer before carrying out the laser grooving treatment on the front surface of the wafer is omitted, and therefore the effect of simplifying the processing process flow of the wafer to improve the production efficiency is achieved.
Description
Technical Field
The application relates to the technical field of semiconductor processing, in particular to a wafer processing method.
Background
The whole original wafer is processed into a plurality of scattered chips, a plurality of process flows such as grooving, cutting and the like are needed, and each process flow involves a plurality of small process steps such as feeding, blanking and the like, so that the whole processing process flow of the wafer is not simplified enough. Therefore, how to simplify the wafer processing process flow is a problem to be solved.
Disclosure of Invention
The embodiment of the application provides a wafer processing method, which can effectively simplify the processing process flow of a wafer so as to improve the production efficiency.
In a first aspect, an embodiment of the present application provides a wafer processing method; the method comprises the following steps:
carrying out laser grooving treatment on the front side of the wafer without the film;
thinning the back of the wafer;
carrying out laser modification cutting processing on the back of the wafer;
carrying out adhesive tape sticking and cutting treatment on the back surface of the wafer; and
the wafer is processed according to the dicing tape so that the wafer is separated into a plurality of chips.
According to the wafer processing method based on the embodiment of the application, the front surface of the wafer without the film is subjected to laser grooving, compared with the laser grooving of the front surface of the wafer with the film in the prior art, the process step that the iron ring is firstly arranged on the wafer before the laser grooving of the front surface of the wafer is carried out is omitted, and therefore the effect that the processing process flow of the wafer is simplified to improve the production efficiency is achieved.
In some embodiments, the step of performing laser grooving on the front side of the un-filmed wafer comprises:
transferring the wafer to a first preset position through a C-shaped shovel;
transferring the wafer to a first processing station and carrying out spin coating protection liquid treatment on the wafer; and
and transferring the wafer to a second processing station and carrying out front laser grooving processing on the wafer to form a cutting channel.
Based on the embodiment, the C-shaped shovel is designed for the wafer without the film, and compared with the prior art that the wafer with the iron ring is sucked by adopting a vacuum sucking disc vacuum adsorption mode, the possibility of failure in grabbing the wafer due to air leakage is effectively avoided, and the probability of successfully grabbing the wafer is improved by grabbing the wafer without the film (without the iron ring) by using the C-shaped shovel; the wafer is treated by spin coating of a protective solution, so that impurities adhered to the surface of the wafer can be cleaned, and the protective solution plays a role in protecting the subsequent processing of the wafer; the front surface of the wafer is scanned by the laser to form the cutting channel, and compared with the operation of performing grooving treatment on the front surface of the wafer by adopting cutters such as a cutter wheel and the like in the prior art, the consumption of parts such as the cutter wheel and the like is reduced, and the cost of consumable materials is low.
In some embodiments, the step of performing a laser modified dicing process on the back side of the wafer comprises:
transferring the wafer to a second preset position through a C-shaped shovel;
transferring the wafer to a third processing station through a transfer ceramic disc, and carrying out back laser modification cutting treatment on the wafer;
and transferring the wafer to a fourth processing station through a transfer ceramic disc.
Based on the embodiment, the C-shaped shovel is used for grabbing the transferred wafer, and compared with the method of grabbing the transferred wafer in a vacuum adsorption mode in the prior art, the probability of successfully grabbing the wafer is improved, so that the effect of improving the production efficiency of the wafer is achieved; the transfer ceramic disc is a structure designed for wafers which are not pasted with films, and the transfer ceramic disc is used for grabbing the wafers, so that the connection stability between the transfer ceramic disc and the wafers can be effectively enhanced; the laser is adopted to scan the back surface of the wafer to carry out modification treatment on the wafer, and compared with the operation of cutting the back surface of the wafer by adopting a cutter wheel and other cutters in the prior art, the consumption of the cutter wheel and other parts is reduced, and the cost of consumable materials is low.
In some embodiments, transferring the wafer to the third processing station through the transfer ceramic disk and performing the backside laser modified dicing process on the wafer comprises:
transferring the wafer to a third processing station through a transfer ceramic disc;
transferring the wafer to the lower part of the infrared camera, so that the infrared camera can shoot and recognize the front side graph of the wafer through the back side of the wafer;
and adjusting the wafer until the back surface of the wafer is vertical to the vertical direction, and performing laser modification cutting processing on the interior of the wafer by using an infrared camera.
Based on the embodiment, the shape of the pattern of the cutting street formed after the front laser grooving process is performed on the wafer, namely the front pattern, can be seen through the infrared camera, the infrared camera performs laser scanning on the back surface of the wafer from the back surface of the wafer according to the front pattern to form the cutting path corresponding to the cutting street, and compared with the prior art that the back surface of the wafer is processed by adopting cutters such as cutter wheels and the like, the purpose of reducing the back surface processing difficulty of the wafer is achieved.
In some embodiments, the step of applying the adhesive dicing tape to the back surface of the wafer comprises:
the iron ring is transferred to a fourth processing station, and the fourth processing station is moved to a preset film pasting position so that the cutting adhesive tape is adhered to the wafer and one side of the iron ring, which is far away from the fourth processing station, and the wafer is attached to the iron ring;
and transferring the wafer adhered with the iron ring to a fifth machining station.
Based on the above embodiment, the dicing tape is arranged to be expanded to generate tensile force pointing to the periphery in the subsequent process of separating the wafer, so that the wafer is separated into a plurality of chips, and meanwhile, the dicing tape is adhered to the side of the wafer departing from the fourth processing station, so that the wafer can be prevented from scattering into individual chips after being subjected to back laser modification and dicing treatment.
In some embodiments, when the iron ring is transferred to the fourth processing station, the iron ring is arranged around the wafer, and the surface of the iron ring on the side away from the fourth processing station and the surface of the wafer on the side away from the fourth processing station are in the same plane.
Based on the above embodiment, the surface of the iron ring deviating from one side of the fourth processing station and the surface of the wafer deviating from one side of the fourth processing station are arranged in the same plane, so that gaps at the bonding positions of the cutting adhesive tape, the wafer and the iron ring are reduced, and the effect of enhancing the connection stability between the cutting adhesive tape, the wafer and the iron ring is achieved.
In some embodiments, the step of processing the wafer according to the dicing tape so that the wafer is separated into the plurality of chips includes:
placing the inner ring of the expansion ring on a sixth processing station, and placing the outer ring of the expansion ring on a fastening cylinder so that the central axis of the inner ring is collinear with the central axis of the outer ring;
placing the wafer on a sixth processing station;
and pressing the cutting adhesive tape from at least one side at the sixth processing station so that the wafer is separated into a plurality of chips.
Based on the above embodiment, the sixth station is raised to press the dicing tape, and the dicing tape is deformed, so that the wafer bonded to the dicing tape is separated into the plurality of chips along with the deformation of the dicing tape.
In some embodiments, the step of thinning the back side of the wafer further includes:
and sticking a protective tape on the front surface of the wafer.
Based on the above embodiments, the protective tape can effectively prevent the wafer from being directly scattered into a plurality of chips after the back laser modification treatment.
In some embodiments, in the step of thinning the back surface of the wafer, the thickness of the wafer after grinding and thinning is less than or equal to 400 μm.
Based on the above embodiment, the thickness of the wafer subjected to the front surface laser grooving process is reduced to less than or equal to 400 microns through grinding, so that on one hand, the time of the back surface laser modification process can be reduced, and on the other hand, the smoothness of the back surface of the wafer can be improved, thereby facilitating the subsequent laser modification process of the back surface of the wafer.
In some of these embodiments, the wafer comprises a silicon wafer.
Based on the above embodiment, the silicon wafer is used as a raw material of the wafer, and the purity is high and the performance is good.
According to the wafer processing method based on the embodiment of the application, the front surface of the wafer without the film is subjected to laser grooving processing, and compared with the laser grooving processing of the front surface of the wafer with the film in the prior art, the processing step that the iron ring is firstly installed on the wafer before the laser grooving processing of the front surface of the wafer is carried out is omitted, so that the effect of simplifying the processing process flow of the wafer and improving the production efficiency is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart illustrating a wafer processing method according to an embodiment of the present disclosure;
FIG. 2 is a schematic flow chart illustrating a laser grooving process for a front side of an un-coated wafer according to an embodiment of the present disclosure;
FIG. 3 is a schematic flow chart illustrating an exemplary embodiment of a laser modified dicing process on the backside of a wafer;
FIG. 4 is a schematic view of an embodiment of the present disclosure illustrating a process of transferring a wafer to a third processing station through a transfer ceramic disk and performing a backside laser modified dicing process on the wafer;
FIG. 5 is a schematic view illustrating a process of applying a dicing tape to the back surface of a wafer according to an embodiment of the present disclosure;
FIG. 6 is a schematic flow chart illustrating a separation process performed on a wafer according to an embodiment of the present disclosure;
FIG. 7 is a schematic flow chart illustrating a wafer processing method according to another embodiment of the present application;
FIG. 8 is a schematic structural view of a C-shovel according to an embodiment of the present application;
FIG. 9 is a schematic view of a C-shovel from another perspective in an embodiment of the present application;
fig. 10 is a schematic view of a portion of a transfer ceramic disk according to an embodiment of the present application.
Reference numerals: 110. a C-shaped tray; 111. a bearing surface; 120. an intermediate connection structure; 121. a gas pipe connector; 130. a guide bar; 140. a movable cylinder; 210. a ceramic chuck; 211. mounting grooves; 2111. a tank bottom wall; 2112. a trench sidewall; 2113. a hole; 220. and (5) a wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the related art, a whole original wafer is processed into a plurality of dispersed chips, a plurality of process flows such as grooving and cutting are required, and each process flow involves a plurality of small process steps such as loading and unloading, so that the whole processing process flow of the wafer is not simplified enough. Therefore, how to simplify the wafer processing process flow is a problem to be solved.
In order to solve the above technical problems, referring to fig. 1 to 10, a first aspect of the present application provides a wafer processing method, which can effectively simplify a wafer processing process flow to improve production efficiency. Wafer processing methods according to some embodiments of the present application are described in detail below.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a wafer processing method according to an embodiment of the present disclosure.
In step S201, the front surface of the wafer to which the film is not attached is subjected to laser grooving processing.
The wafer is an original wafer, no iron ring is arranged on the periphery of the wafer, the iron ring is used for bearing the wafer and providing a grabbing position for a vacuum suction chuck, that is, the iron ring is arranged on the wafer to prevent the chuck from being directly vacuum-sucked on the wafer to shield the wafer. And the surface of the wafer near the metal layer or the oxide layer of silicon is defined as the front side of the wafer. The wafer comprises a silicon wafer which is used as a raw material of the wafer, and the purity and the performance of the wafer are high.
In step S202, the back surface of the wafer is thinned.
The surface of the wafer, which is away from the metal layer or the silicon oxide layer, is defined as the back surface of the wafer, i.e., the surface opposite to the front surface of the wafer is the back surface of the wafer.
In step S203, the back surface of the wafer is subjected to laser modified dicing processing.
The laser modified cutting is to focus laser beam with specific wavelength inside the wafer via lens to produce local modified layer comprising mainly holes, high dislocation density layer and cracks. The modified layer is the starting point of subsequent wafer cutting crack, can be limited in the wafer by optimizing the laser and the optical path system, does not generate thermal damage to the surface and the bottom surface of the wafer, and then leads the crack to the surface and the bottom surface of the wafer by external force so as to separate the wafer into required sizes.
In step S204, the dicing tape is applied to the back surface of the wafer.
The cutting adhesive tape is arranged on the back surface of the wafer, so that the wafer can be effectively prevented from being directly scattered into a plurality of chips after being subjected to back surface laser modification cutting treatment.
In step S205, the wafer is processed according to the dicing tape so that the wafer is separated into a plurality of chips.
The dicing tape is stretched to generate a tensile force directed to the periphery, and the wafer is attached to the dicing tape, so that the wafer is also subjected to the tensile force directed to the periphery, and is separated into a plurality of chips.
In summary, by performing the laser grooving process on the front surface of the wafer without the film, compared with the prior art in which the laser grooving process is performed on the front surface of the wafer with the film, the process step of mounting the iron ring on the wafer before performing the laser grooving process on the front surface of the wafer is omitted, so that the effect of simplifying the processing process flow of the wafer to improve the production efficiency is achieved. In the wafer processing technology, the technological process of combining laser grooving on the front side of the wafer with invisible cutting on the back side of the wafer is adopted, and compared with the technology of cutting the wafer by adopting cutters such as a cutter wheel and the like in the prior art, the wafer processing technology has the advantages that the structure of the wafer cannot be damaged, the wafer cannot be secondarily polluted, the edge breakage phenomenon of the wafer is not easy to generate, the strength of a chip is high, and the like. And the step of thinning the wafer is placed before the step of laser modification and cutting treatment of the back of the wafer, and the back of the thinned wafer is smoother, so that the back of the wafer is more beneficial to subsequent cutting treatment of the back of the wafer.
More specifically, referring to fig. 2, fig. 2 is a schematic flow chart illustrating a laser grooving process performed on a front surface of an un-filmed wafer according to an embodiment of the present application. In some embodiments, step S201 may further include the steps of:
step S301, transferring the wafer to a first preset position through a C-shaped shovel;
step S302, transferring the wafer to a first processing station and carrying out spin coating protective solution treatment on the wafer; and
step S303, the wafer is transferred to the second processing station and front laser grooving is performed on the wafer to form a scribe line.
More specifically, in step S301, the wafer without film is placed in the magazine, and a first wafer in the magazine is sucked out to a first predetermined position by the C-shaped shovel. The thickness of the wafer without the film can be 800 micrometers, the first preset position can be regarded as a middle transition point position in the process of transferring the wafer by the C-shaped shovel, and designers can consider the motion path of the C-shaped shovel and avoid other components to reasonably set the point position.
Referring to fig. 8-9, fig. 8 is a schematic structural view of a C-shaped shovel in an embodiment of the present application, and fig. 9 is a schematic structural view of another angle of the C-shaped shovel in an embodiment of the present application.
The C-shovel includes a C-shaped tray 110, an intermediate linkage 120, a guide bar 130, and a traveling cylinder 140. The C-shaped tray 110 is fixedly installed at one end of the intermediate connection structure 120, for example, the C-shaped tray 110 may be connected to the intermediate connection structure 120 by a bolt and a thread, the C-shaped tray 110 has a carrying surface 111 adapted to carry a wafer, the carrying surface 111 has an air hole (not shown), the intermediate connection structure 120 is installed with an air pipe connector 121, the air pipe connector 121 is used to connect an air pipe (not shown), wherein the intermediate connection structure 120 is a sheet metal part, an air passage (not shown) is designed in the intermediate connection structure and is communicated with the air pipe connector 121 and the C-shaped tray 110, the guide rod 130 is fixedly installed at one end of the intermediate connection structure 120 away from the C-shaped tray 110, the movable cylinder 140 is a linear cylinder, the guide rod 130 is slidably connected in the movable cylinder 140, that is, the movable cylinder 140 can push the guide rod 130 to move so that the guide rod 130 has a movement stroke along a direction, the guide rod 130 makes telescopic motion along the length direction parallel to the movable cylinder 140, so that the intermediate connection structure 120 drives the C-shaped tray 110 to make reciprocating motion along the length direction parallel to the movable cylinder 140, the magazine is placed on the motion track corresponding to the C-shaped tray 110, the action that the C-shaped tray 110 shovels the wafer from the magazine can be realized, after the wafer is shoveled from the magazine by the C-shaped tray 110, the vacuum suction is opened, and the wafer can be sucked by the air holes on the bearing surface 111, so that the relative fixation of the position between the wafer and the C-shaped tray 110 is realized.
In step S302, the material suction claw moves right above the C-shaped shovel, the wafer is clamped from the outer periphery of the wafer, the C-shaped shovel releases vacuum, the material suction claw transfers the wafer to a first processing station, the first processing station may be a coating cleaning table of a coating cleaning bucket, the coating cleaning table vacuum-adsorbs the wafer, the material suction claw releases and moves away the wafer, and then the coating cleaning table performs spin-coating protection solution treatment on the wafer. The specific structures of the material suction claw, the coating cleaning barrel and the coating cleaning platform are not limited, a designer can design according to actual needs, and only the specific structures need to realize required functions.
In step S303, the feeding claw grips the wafer coated with the protective liquid from the coating cleaning table, and transfers the wafer to a second processing station, where the second processing station may be a processing platform on the first laser processing device, the processing platform vacuum-adsorbs the wafer, the feeding claw releases and moves the wafer, a camera in the first laser processing device recognizes a surface pattern of the wafer, and the wafer is adjusted to be parallel and then front-side laser grooving is performed on the wafer. The specific structures of the feeding claw, the first laser processing equipment and the processing platform are not limited, and designers can design according to actual needs and can realize required functions respectively.
In the design, the C-shaped shovel is a structure designed for the wafer without the film, and compared with the prior art that the wafer with the iron ring is sucked by adopting a sucker vacuum adsorption mode, the possibility of failure in grabbing the wafer due to air leakage is effectively avoided, and the probability of successfully grabbing the wafer is improved by grabbing the wafer without the film (without the iron ring) by using the C-shaped shovel; the wafer is treated by spin coating of a protective solution, so that impurities adhered to the surface of the wafer can be cleaned, and the protective solution plays a role in protecting the subsequent processing of the wafer; the front surface of the wafer is scanned by the laser to form the cutting channel, and compared with the operation of performing grooving treatment on the front surface of the wafer by adopting cutters such as a cutter wheel and the like in the prior art, the consumption of parts such as the cutter wheel and the like is reduced, and the cost of consumable materials is low.
Of course, in some other embodiments, the step S201 may further include the following steps:
step S304, the C-shaped shovel takes out a second wafer from the material box, and the step S301 and the step S302 are repeated, at the moment, the second wafer is coated with the protection liquid in a spinning mode and waits on a coating cleaning table;
step S305, after the first wafer is processed, the processing platform releases vacuum, and the material sucking claw clamps the wafer on the processing platform and transfers the wafer to a waiting position. The waiting position is to be understood as an intermediate transition point position of the material suction claw in the process of transferring the wafer, and a designer can reasonably set the point position by considering the motion path of the material suction claw and avoiding other components.
Step S306, the feeding claw clamps the second wafer placed on the coating and cleaning table, and transfers the wafer to the processing platform, and performs front surface grooving on the wafer, that is, step S303.
And step S307, the material sucking claw clamps the processed first wafer and transfers the first wafer to a coating cleaning table, and spin coating protective solution treatment is carried out on the wafer.
And S308, the material sucking claw clamps the cleaned first wafer and transfers the first wafer to the upper part of the C-shaped shovel, the C-shaped shovel adsorbs the wafer in vacuum, the material sucking claw releases the vacuum and moves away, and then the C-shaped shovel transfers the first wafer to the first layer of the material box.
And step S309, taking out a third wafer from the material box by the C-shaped shovel, and repeating the steps S304 to S309 until all the wafers in the material box are processed.
More specifically, referring to fig. 3, fig. 3 is a schematic flow chart illustrating a laser modified dicing process performed on the back surface of a wafer according to an embodiment of the present application. In some embodiments, step S203 may further include the steps of:
step S401, transferring the wafer to a second preset position through a C-shaped shovel;
step S402, transferring the wafer to a third processing station through a transfer ceramic disc and carrying out back laser modification cutting processing on the wafer;
step S403, the wafer is transferred to a fourth processing station through the transferring ceramic disc.
More specifically, in step S401, the C-shaped shovel takes out a first wafer from the magazine, and transfers the wafer to a second predetermined position to pre-position the wafer by using the pre-positioning device. The second preset position can be regarded as another intermediate transition point position in the process of transferring the wafer by the C-shaped shovel, a designer can consider the motion path of the C-shaped shovel and avoid other components to reasonably set the point position, the specific structure of the pre-positioning device is not limited, the designer can design according to actual needs, and the wafer can be positioned.
In step S402, the transfer ceramic disk absorbs the pre-positioned wafer and transfers the wafer to a third processing station, where the third processing station may be a processing platform of a second laser processing device, the processing platform vacuum-absorbs the wafer, the transfer ceramic disk releases the wafer and moves away, and then the second laser processing device performs laser modification cutting processing on the back surface of the wafer. The specific structures of the second laser processing device and the processing platform are not limited, and designers can design according to actual needs as long as the second laser processing device and the processing platform can respectively realize corresponding functions.
Referring to fig. 10, fig. 10 is a partial structural schematic view of a relay ceramic disk according to an embodiment of the present application.
The ceramic transfer chuck 210 includes a ceramic chuck 210, the ceramic chuck 210 has a mounting groove 211 for receiving the wafer 220, the ceramic chuck 210 is adapted to the wafer 210, for example, when the wafer 210 is a wafer, the ceramic chuck 220 is also circular, and a portion of the circular surface of the ceramic chuck 220 is recessed to form the mounting groove 211, the mounting groove 211 includes a bottom wall 2111 and a side wall 2112 disposed around the bottom wall 2111, the bottom wall 2111 is used for forming a suction surface of the ceramic chuck 210, for example, the bottom wall 2111 has a plurality of holes 2113 for vacuum suction, and the ceramic chuck 210 vacuum-sucks the wafer 220 pre-positioned through the holes 2113 and transfers the wafer 220 to a third processing station.
In step S403, the transferring ceramic disc absorbs the processed wafer and transfers the wafer to a fourth processing station, where the fourth processing station may be a film pasting platform of a film pasting machine, and the specific structures of the film pasting machine and the film pasting platform are not limited, and a designer may design the wafer according to actual needs as long as the wafer can respectively realize related functions.
In the design, the C-shaped shovel is used for grabbing the transferred wafer, so that compared with the prior art that the transferred wafer is grabbed in a vacuum adsorption mode, the probability of successfully grabbing the wafer is improved, and the effect of improving the production efficiency of the wafer is achieved; the transfer ceramic disc is a structure designed for wafers which are not pasted with films, and the transfer ceramic disc is used for grabbing the wafers, so that the connection stability between the transfer ceramic disc and the wafers can be effectively enhanced; the laser is adopted to scan the back surface of the wafer to carry out modification treatment on the wafer, and compared with the operation of cutting the back surface of the wafer by adopting a cutter wheel and other cutters in the prior art, the consumption of the cutter wheel and other parts is reduced, and the cost of consumable materials is low.
More specifically, referring to fig. 4, fig. 4 is a schematic flow chart illustrating a process of transferring a wafer to a third processing station through a transfer ceramic disk and performing a backside laser modification cutting process on the wafer according to an embodiment of the present disclosure. In some embodiments, step S402 may further include the steps of:
step S501, transferring the wafer to a third processing station through a transfer ceramic disc;
step S502, the wafer is transferred to the lower part of the infrared camera, so that the infrared camera can shoot and recognize the front side graph of the wafer through the back side of the wafer;
step S503, adjusting the wafer until the back of the wafer is vertical to the vertical direction, and performing laser modification cutting processing on the inside of the wafer by the infrared camera.
The front pattern can be understood as the shape of a cutting street formed on the front surface of the wafer after the front surface is subjected to the front surface grooving treatment, and in the process of carrying out the back surface laser modification cutting treatment on the wafer, the laser carries out invisible cutting treatment on the wafer according to a cutting path corresponding to the cutting street, wherein the vertical direction is the direction vertical to the horizontal plane.
In the design, the pattern shape of a cutting channel formed after the front laser grooving of the wafer can be seen through the infrared camera, namely the front pattern, the infrared camera performs laser scanning on the back of the wafer from the back of the wafer according to the front pattern to form a cutting path corresponding to the cutting channel, and compared with the prior art that the back of the wafer is processed by adopting cutters such as a cutter wheel and the like, the purpose of reducing the back processing difficulty of the wafer is achieved.
Further, in some embodiments, the width dimension of the scribe line may be greater than the width dimension of the scribe path of the laser stealth scribe. In some embodiments, the width dimension of the scribe line may be less than or equal to 20 microns, for example the width dimension of the scribe line may be 5 microns, 10 microns, or 15 microns. In some embodiments, the width dimension of the cutting path may be less than or equal to 2 microns, for example the width dimension of the cutting path may be 0.5 microns, 1 micron, or 1.5 microns.
More specifically, referring to fig. 5, fig. 5 is a schematic flow chart illustrating a process of applying a dicing tape to the back surface of a wafer according to an embodiment of the present disclosure. In some embodiments, step S204 may further include the steps of:
step S601, transferring the iron ring to a fourth processing station, and moving the fourth processing station to a preset film pasting position to enable the cutting adhesive tape to be adhered to the wafer and one side of the iron ring, which is far away from the fourth processing station, so that the wafer is attached to the iron ring;
step S602, the wafer adhered with the iron ring is transferred to the fifth machining station.
The preset film sticking position is understood to be a film sticking point position on the film sticking platform, and a designer can define the position at which the cutting tape has the best bonding effect with the iron ring and the wafer as the film sticking point position. The fifth worker station can be a blanking transfer sliding table which is used for bearing and transferring the wafer adhered with the cutting adhesive tape, the specific structure of the blanking transfer sliding table is not limited, a designer can design according to actual needs, and only the designer needs to realize corresponding functions.
Further, in some embodiments, when the iron ring is transferred to the fourth processing station, the iron ring is arranged around the wafer, and the surface of the iron ring on the side away from the fourth processing station and the surface of the wafer on the side away from the fourth processing station are in the same plane. Wherein, the hoop is used for bearing the weight of the wafer, the shape of hoop and the shape looks adaptation of wafer, for example the wafer is circular, then the hoop is circular frame construction, in this design, after the wafer was placed on fourth processing station, through setting up the surface that deviates from fourth processing station and the surface that deviates from the fourth processing platform of hoop with the surface that deviates from of wafer in the coplanar, can reduce the clearance between the contact surface of cutting sticky tape and wafer and hoop to reach the effect of reinforcing the stability of being connected between cutting sticky tape and wafer and the hoop.
More specifically, referring to fig. 6, fig. 6 is a schematic flow chart illustrating a separation process performed on a wafer according to an embodiment of the present disclosure. In some embodiments, step S205 may further include the steps of:
step S701, placing an inner ring of the expansion ring on a sixth processing station, and placing an outer ring of the expansion ring on a fastening cylinder so as to enable the central axis of the inner ring and the central axis of the outer ring to be collinear;
step S702, placing the wafer on a sixth processing station;
in step S703, the dicing tape is pressed from at least one side at the sixth processing station to separate the wafer into a plurality of chips.
The sixth processing station can be a film expanding platform of the film expanding machine, the specific structures of the film expanding machine and the film expanding platform are not limited, and designers can set the film expanding machine and the film expanding platform according to actual needs as long as the film expanding machine and the film expanding platform can respectively realize corresponding functions.
In the design, the sixth station rises to enable the cutting adhesive tape to be pressed, the cutting adhesive tape deforms, and therefore the wafer bonded on the cutting adhesive tape is separated into a plurality of chips along with the deformation of the cutting adhesive tape.
Referring to fig. 7, fig. 7 is a schematic flow chart illustrating a wafer processing method according to another embodiment of the present disclosure. In some embodiments, the step of thinning the back side of the wafer may further include: and sticking a protective tape on the front surface of the wafer. According to the design, on one hand, the protection tape is pasted on the front surface of the wafer, so that the front surface of the wafer can be protected in the subsequent thinning process of the back surface of the wafer, and on the other hand, the wafer can be prevented from scattering in the laser modification cutting process of the back surface of the wafer. Specifically, the dicing tape may be a BG tape (backsize Grinding tape).
In some embodiments, the step of thinning the back surface of the wafer and the step of processing the wafer according to the dicing tape to separate the wafer into a plurality of chips may further include the steps of: the protective tape is removed. The design is beneficial to the operation of separating and processing the wafer.
Considering that the laser cutting time is also related to the thickness dimension of the wafer, for example, the thinner the wafer is, the shorter the laser cutting time may be, the cross section of the wafer may be cut by cutting with a cutter to reduce the thickness dimension of the wafer, in some embodiments, in the step of thinning the back surface of the wafer, the thickness dimension of the wafer after grinding and thinning is less than or equal to 400 micrometers.
In the design, the thickness of the wafer subjected to front laser grooving is reduced to be less than or equal to 400 microns through grinding, so that on one hand, the time of back laser modification treatment can be reduced, and on the other hand, the smoothness of the back of the wafer can be improved, and therefore the back of the wafer can be subjected to laser modification treatment later.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components; in the description of the present application, it is to be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only for illustrative purposes and are not to be construed as limitations of the present patent, and specific meanings of the above terms may be understood by those skilled in the art according to specific situations.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A method of processing a wafer, comprising:
carrying out laser grooving treatment on the front side of the wafer without the film;
thinning the back of the wafer;
carrying out laser modification cutting processing on the back of the wafer;
carrying out adhesive tape pasting and cutting treatment on the back surface of the wafer; and
and processing the wafer according to the cutting adhesive tape so that the wafer is separated into a plurality of chips.
2. The method of claim 1, wherein the step of laser grooving the front side of the un-filmed wafer comprises:
transferring the wafer to a first preset position through a C-shaped shovel;
transferring the wafer to a first processing station and carrying out spin coating protection liquid treatment on the wafer; and
and transferring the wafer to a second processing station and carrying out front laser grooving processing on the wafer to form a cutting channel.
3. The method of claim 1, wherein the step of laser modifying the backside of the wafer comprises:
transferring the wafer to a second preset position through a C-shaped shovel;
transferring the wafer to a third processing station through a transfer ceramic disc, and carrying out back laser modification cutting treatment on the wafer;
and transferring the wafer to a fourth processing station through the transfer ceramic disc.
4. The method of claim 3, wherein said transferring said wafer to a third processing station via a transfer ceramic disk and back side laser modified dicing said wafer comprises:
transferring the wafer to the third processing station through the transfer ceramic disc;
transferring the wafer to the position below an infrared camera so that the infrared camera can shoot and recognize the front side graph of the wafer through the back side of the wafer;
and adjusting the wafer until the back surface of the wafer is vertical to the vertical direction, and performing laser modification cutting processing on the inside of the wafer by the infrared camera.
5. The method of claim 1, wherein the step of applying a dicing tape to the back side of the wafer comprises:
transferring an iron ring to a fourth processing station, wherein the fourth processing station moves to a preset film pasting position to enable the cutting adhesive tape to be adhered to the wafer and one side of the iron ring, which is far away from the fourth processing station, so that the wafer is attached to the iron ring;
and transferring the wafer adhered with the iron ring to a fifth machining station.
6. The method of claim 5,
and when the iron ring is transferred to the fourth processing station, the iron ring is arranged around the wafer, and the surface of the iron ring, which is deviated from one side of the fourth processing station, and the surface of the wafer, which is deviated from one side of the fourth processing station, are positioned in the same plane.
7. The method of claim 1, wherein the step of processing the wafer in accordance with the dicing tape to separate the wafer into a plurality of chips comprises:
placing an inner ring of an expansion ring at a sixth processing station, placing an outer ring of the expansion ring on a fastening cylinder such that a central axis of the inner ring is collinear with a central axis of the outer ring;
placing the wafer on the sixth processing station;
and pressing the cutting adhesive tape from at least one side at the sixth processing station so that the wafer is separated into a plurality of chips.
8. The method of claim 1, wherein thinning the back side of the wafer further comprises:
and sticking a protective adhesive tape on the front surface of the wafer.
9. The method of claim 1,
in the step of thinning the back of the wafer, the thickness of the ground and thinned wafer is less than or equal to 400 microns.
10. The method of claim 1,
the wafer comprises a silicon wafer.
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Cited By (1)
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| CN118024057A (en) * | 2024-04-15 | 2024-05-14 | 东莞市鼎力自动化科技有限公司 | Prevent two-sided mill of wafer of pressure loss |
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