CN112820671A - Transfer device, transfer system and method - Google Patents
Transfer device, transfer system and method Download PDFInfo
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- CN112820671A CN112820671A CN202110178478.3A CN202110178478A CN112820671A CN 112820671 A CN112820671 A CN 112820671A CN 202110178478 A CN202110178478 A CN 202110178478A CN 112820671 A CN112820671 A CN 112820671A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
The embodiment of the invention discloses a transfer device, a transfer system and a transfer method, wherein the transfer device comprises a transfer substrate, an excitation part and a flexible membrane, the excitation part is positioned between the transfer substrate and the flexible membrane, the excitation part is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate, so that the flexible membrane deforms at the position subjected to the thrust, the contact area between a chip to be transferred in a chip array to be transferred and the flexible membrane is reduced, the chip array to be transferred is separated from the transfer device, and the mass transfer of the chip to be transferred is realized. The flexible film can play the effect of buffering and uniform stress for at least some chips of waiting to shift in the chip array can be under the effect of uniform stress, and the separation has improved and has shifted the precision to the position that needs the alignment of target substrate. Due to the arrangement of the flexible film, the damage of corrosion and the like of the gas generated by the excitation of the excitation part on the chip to be transferred can be avoided.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a transfer device, a transfer system and a transfer method.
Background
Currently, Micro Light Emitting diodes (Micro LEDs) are called future display technologies due to their high response speed, high color gamut, high brightness, long lifetime, etc.; a Liquid Crystal Display (LCD) is used in combination with a Mini Light Emitting Diode (Mini LED) backlight technology, a quantum technology or a high color rendering technology, and is also a means for keeping the life and brightness advantages of the LCD compared to an Organic Light Emitting Diode (OLED) and reducing the relative disadvantages of the LCD in terms of contrast and color gamut.
At present, one of the bottlenecks of the mass transfer technology is that the currently adopted technology is mechanical type stamping, electrostatic type, fluid assembly and the like. Due to the problems of transfer efficiency, yield and precision, the mass production and popularization of Micro LED and MINI LED technologies are difficult to support.
Therefore, it is an urgent need to provide a device to realize mass transfer of Micro LEDs and MINI LEDs.
Disclosure of Invention
The invention provides a transfer device, a transfer system and a transfer method, which are used for realizing mass transfer of small-sized chips.
In a first aspect, an embodiment of the present invention provides a transfer device, including: the flexible film comprises a transfer substrate, an excitation part and a flexible film, wherein the excitation part is positioned between the transfer substrate and the flexible film, and is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed.
Optionally, the transfer substrate has a plurality of grooves thereon;
the excitation part is positioned in the groove,
the flexible membrane is located on the surface of the transfer substrate having the grooves.
Optionally, the cross section of the groove is rectangular, trapezoidal or arc; preferably, the cross-sectional shape of the groove is parabolic.
Optionally, the flexible film is made of a non-adhesive material, and the transfer device further includes a first adhesive layer and a second adhesive layer, the first adhesive layer is located between the flexible film and the transfer substrate, and the second adhesive layer is located on a side of the flexible film away from the transfer substrate;
alternatively, the material of the flexible membrane is a viscous material.
Optionally, the excitation source is an electromagnetic wave energy source, a heat source, or a chemical source, wherein the chemical source comprises a chemical substance.
Optionally, the excitation source is an electromagnetic wave energy source, at least one side of the excitation portion is transparent to an electromagnetic wave with a set wavelength emitted by the electromagnetic wave energy source, and the electromagnetic wave with the set wavelength is used for exciting the excitation portion.
Optionally, at least one of the flexible film and the transfer substrate is transparent to electromagnetic waves of a set wavelength;
optionally, an electromagnetic wave energy absorption film is disposed on a side of the structure that is far away from the excitation portion and is permeable to the electromagnetic wave with the set wavelength, and the electromagnetic wave energy absorption film is used for absorbing at least the electromagnetic wave with the set wavelength, wherein the structure that is permeable to the electromagnetic wave with the set wavelength is a flexible film or a transfer substrate;
optionally, the transfer substrate can be transparent to electromagnetic waves with a set wavelength;
alternatively, the flexible film may be transparent to the set wavelength of the electromagnetic wave, or the flexible film may be opaque to the set wavelength of the electromagnetic wave.
Optionally, the excitation portion comprises a host material, an absorption material for absorbing excitation energy of the excitation source.
In a second aspect, an embodiment of the present invention further provides a transfer system, including the transfer device provided in the first aspect; the chip transfer system further comprises a chip array to be transferred, a target substrate and an excitation source;
the chip array to be transferred is positioned on one side of a transfer substrate of the transfer device, which is provided with an excitation part, and the chip array to be transferred is positioned on one side of the excitation part, which is far away from the transfer substrate;
the target substrate is positioned on one side of the chip array to be transferred, which is far away from the transfer device, and is separated from the chip array to be transferred;
the excitation source is used for exciting the excitation part to generate gas so as to generate thrust at least in the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed, and at least part of chips to be transferred of the chip array to be transferred is separated from the flexible film of the transfer device to the target substrate.
Optionally, the excitation source is located on a side of the transfer device away from the array of chips to be transferred.
Optionally, the transfer substrate has a plurality of grooves, and the excitation portion is located in the grooves;
the chip array to be transferred comprises a plurality of chips to be transferred, and in the thickness direction of the transfer substrate, the vertical projection of each chip to be transferred on the substrate to be transferred covers at least one groove;
optionally, the vertical projection of each chip to be transferred on the substrate to be transferred covers at least two grooves.
In a third aspect, an embodiment of the present invention further provides a transfer method, including:
and exciting an excitation part on the transfer substrate through an excitation source, so that the excitation part generates gas to generate a thrust force at least along the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed, and at least part of the chips to be transferred of the chip array to be transferred is separated from the flexible film of the transfer device to the target substrate.
Optionally, the exciting portion in the groove of the transfer substrate is excited by an excitation source, so that the exciting portion generates gas to generate a thrust at least in the thickness direction of the transfer substrate, so as to deform at least a part of the position of the flexible film, so that at least a part of the chip to be transferred of the chip array to be transferred is separated from the flexible film of the transfer device to the target substrate, including:
and placing the surface of the transfer device provided with the flexible membrane towards the ground surface, and exciting an excitation part in the groove of the transfer substrate through an excitation source so that the excitation part generates gas to generate thrust at least in the direction vertical to the thickness direction of the transfer substrate, so that at least part of the chips to be transferred of the chip array to be transferred are separated from the flexible membrane of the transfer device to the target substrate under the action of the thrust and gravity.
The transfer device, the transfer system and the transfer method provided by the embodiment of the invention comprise a transfer substrate, an excitation part and a flexible membrane, wherein the excitation part is positioned between the transfer substrate and the flexible membrane, and is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate, so that the flexible membrane deforms at the position subjected to the thrust, the contact area between a chip to be transferred in a chip array to be transferred and the flexible membrane is reduced, the chip array to be transferred is finally separated from the transfer device, and the mass transfer of the chips to be transferred in the chip array to be transferred is realized. The flexible membrane sets up, can play buffering and the effect of uniform stress, and then makes the power that each position of waiting to shift the chip array received more even, makes the at least part of waiting to shift in the chip array and waits to shift the position that the chip can separate to the needs alignment of target substrate under the effect of uniform stress, has improved and has shifted the precision. In addition, the arrangement of the flexible film can reduce the contact between the gas generated by the excitation of the excitation part and the chip to be transferred, and further avoid the damage of the gas generated by the excitation of the excitation part, such as corrosion of the chip to be transferred.
Drawings
Fig. 1 is a schematic structural diagram of a transfer device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a transfer system according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of the separation of the chip to be transferred from the transferring device after the excitation source excites the excitation portion in the embodiment of the present invention;
FIG. 10 is a schematic structural diagram of a transfer system provided in an embodiment of the present invention;
FIG. 11 is a flow chart of a transfer method provided by an embodiment of the present invention;
fig. 12 is a schematic diagram of transferring a chip array to be transferred according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the present invention provides a transfer device, and fig. 1 is a schematic structural diagram of the transfer device provided in the embodiment of the present invention, and referring to fig. 1, the transfer device includes: the transfer substrate 110, the excitation portion 120 and the flexible film 130, wherein the excitation portion 120 is located between the transfer substrate 110 and the flexible film 130, and the excitation portion 120 is configured to generate a gas under excitation of an excitation source to generate a thrust force at least in a thickness direction y of the transfer substrate 110, so as to deform at least a portion of the flexible film 130.
The transfer device of the embodiment can be used for mass transfer of Micro LEDs, MINI LEDs and other small-sized devices.
Specifically, the transfer substrate 110 may be a rigid substrate or a flexible substrate. When the transfer substrate 110 is a hard substrate, the material of the transfer substrate 110 may be a hard material such as glass or quartz glass; when the transfer substrate 110 is a flexible substrate, the material of the transfer substrate 110 may be a flexible material such as Polyethylene terephthalate (PET), Polycarbonate (PC), polymethyl methacrylate (PMMA), and the like.
The excitation portion 120 may include a material that may generate a gas under excitation by an excitation source, wherein the excitation portion 120 may be in a solid, liquid, or molten state in an unexcited configuration. Optionally, after the excitation part 120 is excited, the excitation part 120 itself generates a physical reaction, and/or a chemical reaction generates a gas to expand in volume. The excitation part 120 may be disposed at least at a portion of the surface of the transfer substrate 110, wherein the position of the excitation part 120 may be set according to an object to be transferred by the transfer apparatus. Alternatively, each excitation portion 120 may correspond to one object to be transferred, or a plurality of excitation portions 120 may correspond to one object to be transferred, where the object to be transferred may be a small-sized device, such as a Micro LED or a MINI LED.
The object to be transferred can be a chip array to be transferred, the chip array to be transferred comprises a plurality of chips to be transferred, and the chips to be transferred can comprise a plurality of Micro LEDs, MINI LEDs and other small-size devices. The process of transferring the chip array to be transferred by using the transferring device of this embodiment may be that the chip array to be transferred is disposed on one side of the flexible film 130 of the transferring device, which is far away from the transferring substrate 110, the excitation portion 120 of the transferring device is excited by the excitation source, the excitation portion 120 is excited to generate gas, the volume of the gas expands and generates thrust at least in the thickness direction y of the transferring substrate 110, so that the flexible film 130 deforms at the position where the thrust is applied, and then the contact area between the chip to be transferred in the chip array to be transferred and the flexible film 130 is reduced, and finally the chip array to be transferred is separated from the transferring device, and then the transfer of the chip array to be transferred is realized.
The setting of flexible membrane 130, can be so that the excited generation of portion 120 is gaseous, the thrust that the volume expansion and produce can not directly be used in waiting to shift on the chip, but on waiting to shift the chip through flexible membrane 130 effect, make flexible membrane 130 can play the effect of buffering and uniform stress, and then make the power that each position of waiting to shift the chip received more even, make the chip that waits to shift in the chip array can separate the position that needs to aim at to the target substrate under the effect of uniform stress, the transfer precision has been improved. Moreover, the arrangement of the flexible film 130 can reduce the contact between the gas generated by the excitation of the excitation portion 120 and the chip to be transferred, thereby avoiding the damage of the gas generated by the excitation of the excitation portion 120 to the chip to be transferred, such as corrosion.
It should be noted that, the hard substrate is less prone to deformation relative to the flexible substrate, and therefore, when the transfer substrate 110 is a hard substrate, after the chip array to be transferred is transferred by using the transfer device of this embodiment, the deformation amount of the transfer substrate 110 is smaller, and therefore, the transfer substrate can be used again for transferring the chip array to be transferred, and the recycling rate is higher.
The transfer device provided by the embodiment comprises a transfer substrate, an excitation part and a flexible membrane, wherein the excitation part is positioned between the transfer substrate and the flexible membrane, the excitation part is used for generating gas under the excitation of an excitation source so as to generate thrust at least in the thickness direction of the transfer substrate, and the flexible membrane deforms at the position subjected to the thrust, so that the contact area between a chip to be transferred in a chip array to be transferred and the flexible membrane is reduced, and finally the chip array to be transferred is separated from the transfer device, so that the mass transfer of the chip array to be transferred is realized. The flexible membrane sets up, can play buffering and the effect of uniform stress, and then makes the power that each position of waiting to shift the chip array received more even, makes the at least part of waiting to shift in the chip array and waits to shift the position that the chip can separate to the needs alignment of target substrate under the effect of uniform stress, has improved and has shifted the precision. In addition, the arrangement of the flexible film can reduce the contact between the gas generated by the excitation of the excitation part and the chip to be transferred, and further avoid the damage of the gas generated by the excitation of the excitation part, such as corrosion of the chip to be transferred.
Fig. 2 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention, fig. 3 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention, fig. 4 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention, and referring to fig. 2 to fig. 4, optionally, a plurality of grooves 111 are formed on the transfer substrate 110; the excitation part 120 is located in the groove 111, and the flexible film 130 is located on the surface of the transfer substrate 110 having the groove 111.
Specifically, the groove 111 may be a structure of the transfer substrate 110 itself, and optionally, at least one surface of the transfer substrate 110 has a plurality of grooves 111. The groove 111 may also be a structure of other film layers on the transfer substrate 110, and exemplarily, a setting film layer structure fixed with the transfer substrate 110 is included on the transfer substrate 110, and a surface of the setting film layer structure away from the transfer substrate 110 has a plurality of grooves 111. In this embodiment, the transfer substrate 110 has a plurality of grooves 111, and when the grooves 111 are manufactured, the size of the grooves 111 can be designed according to the size of the chip to be transferred in the chip array to be transferred, so as to manufacture an accurate groove 111 structure. Optionally, one groove 111 corresponds to one chip to be transferred or at least one groove 111 corresponds to one chip to be transferred.
When the transfer substrate 110 is a hard substrate, the groove 111 may be formed by etching the surface of the hard substrate. When the transfer substrate 110 is a flexible substrate, the groove 111 may be formed by a hot pressing or a UV transfer.
On the basis of the above embodiment, the cross section of the groove 111 may be rectangular (the structure shown in fig. 2), trapezoidal (the structure shown in fig. 3) or arc (the structure shown in fig. 4). Wherein, the cross section of the groove 111 is the cross section of the groove 111 obtained when the transfer device is cut along the thickness direction y of the transfer substrate 110.
Further, the size of the groove 111 gradually increases from the bottom of the groove 111 to the opening of the groove 111; optionally, the cross-sectional shape of the groove 111 is parabolic, so that after the excitation portion 120 is excited to generate gas, a jet flow pointing to the direction of the flexible film 130 from the bottom of the groove 111 is more easily formed, and the falling direction of the chip to be transferred from the transfer device can be parallel to the thickness direction y of the transfer substrate 110, that is, when the chip to be transferred is separated from the transfer device, the falling direction from the transfer device can be precisely controlled.
With continued reference to fig. 1-4, the material of flexible membrane 130 may alternatively be an adhesive material. For example, the material of the flexible film 130 may be a colloid such as a pressure sensitive adhesive, an optical adhesive, or the like. When the material of the flexible film 130 is a viscous material, the flexible film 130 itself has viscosity, so that the flexible film 130 can be bonded to the transfer substrate 110 without providing an additional adhesive layer; when the transfer device is used for transferring the chip array to be transferred, the flexible film 130 can be bonded with the chip array to be transferred, so that the structure of the transfer device is light and thin.
Fig. 5 is a schematic structural diagram of another transfer device provided in an embodiment of the present invention, and referring to fig. 5, in another alternative embodiment of the present invention, the flexible film 130 is a non-adhesive material, the transfer device further includes a first adhesive layer 141 and a second adhesive layer 142, the first adhesive layer 141 is located between the flexible film 130 and the transfer substrate 110, and the second adhesive layer 142 is located on a side of the flexible film 130 away from the transfer substrate 110.
Specifically, the first adhesive layer 141 may be used to adhere the flexible film 130 and the transfer substrate 110, so that the flexible film 130 and the transfer substrate 110 are fixed. The second adhesive layer 142 may be used to adhere the array of chips to be transferred when transferring the array of chips to be transferred.
On the basis of the above technical solutions, the excitation source may be an electromagnetic wave energy source, a heat source, or a chemical source, wherein the chemical source includes a chemical substance.
Alternatively, the electromagnetic wave energy source may be a light source, and the light source may be a visible light source, a non-visible light source, or a laser light source. Specifically, an excitation portion that can be excited by the excitation source may be provided according to the excitation source, or the excitation source may be selected according to the excitation condition of the excitation portion. Specifically, when the transfer device is used for transferring the chip array to be transferred, it is required to ensure that energy (when the excitation source is an electromagnetic wave energy source, the energy provided by the excitation source is electromagnetic wave energy; when the excitation source is a heat source, the energy provided by the excitation source is heat energy) or a substance (when the excitation source is a chemical source, the substance provided by the excitation source is a chemical substance) provided by the excitation source can reach the excitation part, so that the excitation part can be excited.
Optionally, the excitation source is an electromagnetic wave energy source, at least one side of the excitation portion 120 is transparent to an electromagnetic wave with a set wavelength emitted by the electromagnetic wave energy source, and the electromagnetic wave with the set wavelength is used for exciting the excitation portion 120.
At least one side of the excitation portion 120 can be transparent to the electromagnetic wave with the set wavelength emitted by the electromagnetic wave energy source, which means in the transfer device, the structure on at least one side of the excitation portion 120 can be transparent to the electromagnetic wave with the set wavelength emitted by the electromagnetic wave energy source, so as to ensure that the electromagnetic wave with the set wavelength for exciting the excitation portion 120 can reach the excitation portion 120, and further ensure that the excitation portion 120 can separate at least part of the chip array to be transferred from the transfer device under the excitation of the excitation source.
One side of the excitation portion 120 is structured as a flexible film 130, and the other side of the excitation portion 120 is structured as a transfer substrate 110. Taking the structure shown in fig. 2 as an example, the upper side of the excitation portion 120 is the flexible film 130, and the lower side of the excitation portion 120 is the transfer substrate 110, and optionally, a film layer structure (not shown in the figure) may be included on the left side and the right side of the excitation portion 120, and in this embodiment, any side structure of the excitation portion 120 may be configured to transmit the electromagnetic wave with the set wavelength emitted by the electromagnetic wave energy source.
Based on the above technical solution, optionally, at least one of the flexible film 130 and the transfer substrate 110 is transparent to electromagnetic waves with a set wavelength.
Alternatively, the transfer substrate 110 can transmit the electromagnetic wave with a set wavelength, and when the chip array to be transferred is transferred, the excitation source can be disposed on the side of the transfer substrate 110 away from the flexible film 130.
Alternatively, the flexible film 130 can transmit the electromagnetic wave with a set wavelength, and when the chip array to be transferred is transferred, the excitation source can be disposed on a side of the flexible film 130 away from the transfer substrate 110.
Optionally, an electromagnetic wave energy absorption film is disposed on a side of the structure that is far away from the excitation portion and is permeable to the electromagnetic wave with the set wavelength, and the electromagnetic wave energy absorption film is configured to absorb at least the electromagnetic wave with the set wavelength, wherein the structure that is permeable to the electromagnetic wave with the set wavelength is a flexible film or a transfer substrate.
Wherein, the electromagnetic wave energy absorption film is used for absorbing at least the electromagnetic wave with the set wavelength, so that the electromagnetic wave with the set wavelength can not reach the excitation part. The electromagnetic wave energy absorption film is arranged on one side, away from the excitation part, of the structure, which can be penetrated by the electromagnetic waves with the set wavelength, so that the excitation part of the transfer device can be prevented from being excited in the transportation process, and the stability of the transfer device in the transportation process is improved. When the chip array to be transferred is transferred by using the transfer device of the embodiment, the electromagnetic wave energy absorption film can be removed, and then the chip array to be transferred is fixed on the flexible film for transfer. When the electromagnetic wave energy source is a light source, the electromagnetic wave energy absorbing film can be a light shielding film which can absorb light rays to prevent the light rays from irradiating the excitation part.
Fig. 6 is a schematic structural diagram of another transfer device provided by an embodiment of the present invention, and referring to fig. 6, optionally, the transfer substrate 110 is transparent to electromagnetic waves of a set wavelength, and the transfer device further includes a first electromagnetic wave energy absorption film 150 located on a side of the transfer substrate 110 away from the flexible film 130.
Fig. 7 is a schematic structural diagram of another transfer device provided by an embodiment of the present invention, and referring to fig. 7, optionally, the flexible film 130 is transparent to electromagnetic waves with a set wavelength, and the transfer device further includes a second electromagnetic energy absorption film 160 located on a side of the flexible film 130 away from the transfer substrate 110.
In another alternative embodiment of the invention, the flexible membrane is impermeable to electromagnetic waves of a set wavelength; the flexible film can be used as an electromagnetic wave energy absorption film, so that the electromagnetic waves with set wavelengths in the transportation process of the transfer device are prevented from reaching the excitation part through the flexible film, and the stability of the transfer device in the transportation process is improved. When the flexible film is impermeable to electromagnetic waves of a set wavelength, the transfer substrate can transmit the electromagnetic waves of the set wavelength.
In addition to the above embodiments, the excitation portion may optionally include a main material and an absorption material for absorbing excitation energy of the excitation source.
Specifically, the absorption material is used for absorbing energy of the excitation source, so that the host material of the excitation portion of the excitation source can generate gas through at least one of physical reaction and chemical reaction, or the host material of the excitation portion of the excitation source and the absorption material can generate gas through at least one of physical reaction and chemical reaction.
Optionally, the excitation part at least generates a chemical reaction under excitation of the excitation source, the main material may be ether, and the absorption material may be carbon powder; the excitation part also comprises an oxidant, and the oxidant can enable the reaction of the excitation part to be more violent, so that a larger thrust force is generated, and the chip array to be transferred can be separated from the transfer device.
Optionally, when the transfer device is manufactured, the material of the excitation portion may be in a liquid state or a molten state, the material of the excitation portion in the liquid state or the molten state may be coated on the transfer substrate in a coating manner, and when the transfer substrate has a groove, the material of the excitation portion may be coated in the groove, and the coating manner may be doctor blade coating or micro-gravure coating.
Fig. 8 is a schematic structural diagram of a transfer system provided in an embodiment of the present invention, and fig. 9 is a schematic structural diagram of a chip to be transferred after an excitation source excites an excitation portion in an embodiment of the present invention and is separated from a transfer device. Referring to fig. 8 and 9, the transfer system includes the transfer device 100 provided in any of the above embodiments, further including a chip array 200 to be transferred, a target substrate 300, and an excitation source 400;
the chip array 200 to be transferred is located on one side of the transfer substrate 110 of the transfer device 100, where the excitation part 120 is arranged, and the chip array 200 to be transferred is located on one side of the excitation part 120, which is far away from the transfer substrate 110;
the target substrate 300 is positioned at one side of the chip array 200 to be transferred away from the transfer device 100 and is separated from the chip array 200 to be transferred;
the excitation source 400 is configured to excite the excitation portion 120 to generate a gas to generate a thrust force at least in the thickness direction y of the transfer substrate 110, so as to deform at least a portion of the position of the flexible film 130, and separate at least a portion of the chips to be transferred of the chip array to be transferred 200 from the flexible film 130 of the transfer apparatus 100 to the target substrate 300.
Optionally, the chip array to be transferred 200 may include the chip to be transferred 210, and the chip to be transferred may be a Micro LED or a MINI LED.
Optionally, the target substrate 300 is a driving backplane, and the driving backplane includes a plurality of driving circuits, where each driving circuit may correspond to at least one light emitting device. When the chip array 200 to be transferred is transferred from the transfer apparatus 100 to the target substrate 300, each light emitting device may be aligned with a corresponding driving circuit, and then the excitation portion 120 in the transfer apparatus 100 is excited by the excitation source 400, so that the excitation portion 120 is excited to generate gas and generate a thrust at least in the thickness direction y of the transfer substrate 110, and further the flexible thin film is deformed, for example, the generated deformation is a protruding structure protruding toward the chip to be transferred (see fig. 9), so that the contact area between the flexible thin film 130 and the chip to be transferred in the chip array 200 to be transferred is reduced, and further the chip to be transferred is separated from the transfer apparatus 100 to the target substrate 300.
In other optional embodiments of the present invention, the target substrate 300 may also be an intermediate carrier, and after the chips to be transferred are separated from the intermediate carrier, the chips may also be transferred to other positions from the intermediate carrier.
The transfer system comprises a transfer device, wherein the transfer device comprises a transfer substrate, an excitation part and a flexible membrane, the excitation part is positioned between the transfer substrate and the flexible membrane, and the excitation part is used for generating gas under the excitation of an excitation source 4 so as to generate thrust at least in the thickness direction of the transfer substrate, so that the flexible membrane deforms at the position subjected to the thrust, the contact area between a chip to be transferred in a chip array to be transferred and the flexible membrane is reduced, the chip array to be transferred is separated from the transfer device, and the transfer of the chip array to be transferred is realized. The flexible membrane sets up, can play buffering and the effect of uniform stress, and then makes the power that each position of waiting to shift the chip array received more even, makes the at least part of waiting to shift in the chip array and waits to shift the position that the chip can separate to the needs alignment of target substrate under the effect of uniform stress, has improved and has shifted the precision. In addition, the arrangement of the flexible film can reduce the contact between the gas generated by the excitation of the excitation part and the chip to be transferred, and further avoid the damage of the gas generated by the excitation of the excitation part, such as corrosion of the chip to be transferred.
With continued reference to fig. 8 and 9, optionally, excitation source 400 is located on a side of transfer device 100 remote from chip array 200 to be transferred; the excitation source 400 is located between the transfer device 100 and the target substrate 300, so that when a chip to be transferred in the chip array 200 to be transferred is separated from the transfer device 100 to the target substrate 300, the excitation source 400 does not block the chip to be transferred, the chip to be transferred can directly reach the target substrate 300 after falling off from the transfer device 100, that is, a separation path from the transfer device 100 to the target substrate 300 of the chip to be transferred is not changed, and thus, after the chip array 200 to be transferred is aligned with the target substrate 300, the chip to be transferred can be separated to a position of a corresponding driving circuit of the target substrate 300, and the transfer accuracy is ensured.
In other alternative embodiments of the present invention, the excitation source 400 may also be located on a side of the flexible film 130 away from the transfer substrate 110 or other positions, and the embodiment is not limited in this respect.
Fig. 10 is a schematic structural diagram of a transfer system according to an embodiment of the present invention, and referring to fig. 10, in an alternative, a transfer substrate 110 has a plurality of grooves 111, and an excitation portion 120 is located in the grooves 111; the chip array to be transferred 200 includes a plurality of chips to be transferred, and a vertical projection of each chip to be transferred on the substrate to be transferred 110 in the thickness direction y of the transfer substrate 110 covers at least one groove 111.
Specifically, the excitation portion 120 is located in the groove 111 of the transfer substrate 110, and after the excitation portion 120 is excited, the position of the flexible film 130 corresponding to the groove 111 is deformed. In the thickness direction y of the transfer substrate 110, a vertical projection of each chip to be transferred on the substrate 110 to be transferred covers at least one groove 111, that is, in the thickness direction y of the transfer substrate 110, each chip to be transferred corresponds to at least one groove 111, so that after the flexible film 130 corresponding to the position of the groove 111 is deformed, the chip to be transferred corresponding to the position of the groove 111 can be separated from the transfer device 100.
Optionally, the vertical projection of each chip to be transferred on the substrate 110 to be transferred covers at least two grooves 111, so that the thrust applied to the chip to be transferred is more uniform, which is beneficial to more accurately controlling the separation direction of the chip to be transferred from the device 100 to be transferred, so that the chip to be transferred can be separated to the position of the driving circuit corresponding to the chip to be transferred on the target substrate 300, and the transfer precision is improved.
An embodiment of the present invention further provides a transfer method, and fig. 11 is a flowchart of the transfer method provided in the embodiment of the present invention, and referring to fig. 11, the transfer method includes:
and 510, exciting an excitation part on the transfer substrate through an excitation source, so that the excitation part generates gas to generate a thrust force at least along the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed, and at least part of the chips to be transferred of the chip array to be transferred is separated from the flexible film of the transfer device to the target substrate.
The transfer method provided in this embodiment is executed by the transfer system according to any of the above embodiments of the present invention, and has the technical effect of transferring system response, which is not described herein again.
Fig. 12 is a schematic diagram of transferring a chip array to be transferred according to an embodiment of the present invention, and referring to fig. 12, optionally, step 510 may include:
and placing the surface of the transfer device provided with the flexible membrane towards the ground surface, and exciting an excitation part in the groove of the transfer substrate through an excitation source so that the excitation part generates gas to generate thrust at least in the direction vertical to the thickness direction of the transfer substrate, so that at least part of the chips to be transferred of the chip array to be transferred are separated from the flexible membrane of the transfer device to the target substrate under the action of the thrust and gravity.
Specifically, due to the gravity action of the chip to be transferred, when the surface of the transfer device 100 provided with the flexible film 130 is placed towards the ground surface 600, the thrust generated by the excitation of the excitation part 120 does not need to be too large, and it can be ensured that at least part of the chip to be transferred of the chip array 200 to be transferred is separated from the flexible film 130 of the transfer device 100 to the target substrate 300, so that the separation of the chip to be transferred and the transfer device 100 is more easily achieved.
In other alternative embodiments of the present invention, the surface of the transfer device 100 on which the flexible membrane 130 is disposed may also be disposed away from the surface 600, and the present invention is not particularly limited thereto.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (13)
1. A transfer device, comprising: the flexible film comprises a transfer substrate, an excitation part and a flexible film, wherein the excitation part is positioned between the transfer substrate and the flexible film, and the excitation part is used for generating gas under the excitation of an excitation source so as to generate a thrust force at least in the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed.
2. The transfer device of claim 1, wherein the transfer substrate has a plurality of grooves thereon;
the excitation portion is located within the recess,
the flexible film is located on the surface of the transfer substrate having the grooves.
3. The transfer device of claim 2, wherein the grooves are rectangular, trapezoidal, or arcuate in cross-section; preferably, the cross-sectional shape of the groove is parabolic.
4. The transfer device of claim 1,
the flexible film is made of a non-sticky material, the transfer device further comprises a first adhesive layer and a second adhesive layer, the first adhesive layer is located between the flexible film and the transfer substrate, and the second adhesive layer is located on the side, away from the transfer substrate, of the flexible film;
alternatively, the material of the flexible membrane is a viscous material.
5. The transfer device of claim 1, wherein the excitation source is an electromagnetic wave energy source, a heat source, or a chemical source, wherein the chemical source comprises a chemical species.
6. The transfer device of claim 5, wherein the excitation source is an electromagnetic wave energy source, and at least one side of the excitation portion is transparent to a set wavelength of electromagnetic waves emitted by the electromagnetic wave energy source, the set wavelength of electromagnetic waves being used to excite the excitation portion.
7. The transfer device of claim 6, wherein at least one of the flexible film and the transfer substrate is transparent to the set wavelength of electromagnetic waves;
preferably, an electromagnetic wave energy absorption film is disposed on a side of the structure that is transparent to the electromagnetic wave with the set wavelength and is far away from the excitation portion, and the electromagnetic wave energy absorption film is configured to absorb at least the electromagnetic wave with the set wavelength, wherein the structure that is transparent to the electromagnetic wave with the set wavelength is the flexible film or the transfer substrate;
preferably, the transfer substrate is transparent to the electromagnetic wave with the set wavelength;
preferably, the flexible film is transparent to the electromagnetic wave with the set wavelength, or the flexible film is not transparent to the electromagnetic wave with the set wavelength.
8. The transfer device of claim 1, wherein the excitation portion comprises a host material, an absorption material for absorbing excitation energy of the excitation source.
9. A transfer system comprising the transfer device of any one of claims 1-8;
the chip transfer system further comprises a chip array to be transferred, a target substrate and an excitation source;
the chip array to be transferred is positioned on one side, provided with an excitation part, of the transfer substrate of the transfer device, and the chip array to be transferred is positioned on one side, far away from the transfer substrate, of the excitation part;
the target substrate is positioned on one side of the chip array to be transferred, which is far away from the transfer device, and is separated from the chip array to be transferred;
the excitation source is used for exciting the excitation part to generate gas so as to generate thrust at least in the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed, and at least part of chips to be transferred of the chip array to be transferred is separated from the flexible film of the transfer device to the target substrate.
10. The transfer system of claim 9, wherein the excitation source is located on a side of the transfer device remote from the array of chips to be transferred.
11. The transfer system of claim 9, wherein the transfer substrate has a plurality of grooves thereon, the excitation sites being located within the grooves;
the chip array to be transferred comprises a plurality of chips to be transferred, and in the thickness direction of the transfer substrate, the vertical projection of each chip to be transferred on the substrate to be transferred covers at least one groove;
preferably, each chip to be transferred covers at least two grooves in a vertical projection on the substrate to be transferred.
12. A method of transferring, comprising:
and exciting an excitation part on the transfer substrate through an excitation source, so that the excitation part generates gas to generate a thrust force at least along the thickness direction of the transfer substrate, so that at least part of the position of the flexible film is deformed, and at least part of the chips to be transferred of the chip array to be transferred is separated from the flexible film of the transfer device to the target substrate.
13. The transfer method according to claim 12, wherein the exciting portion in the groove of the transfer substrate by the excitation source to generate gas to generate a pushing force at least in the thickness direction of the transfer substrate to deform at least a part of the position of the flexible film to separate at least a part of the chip to be transferred of the chip array to be transferred from the flexible film of the transfer device to the target substrate comprises:
placing the surface, provided with the flexible membrane, of the transfer device towards the ground surface, and exciting an excitation part in a groove of a transfer substrate through an excitation source so that the excitation part generates gas to generate a thrust force at least along the direction vertical to the thickness direction of the transfer substrate, so that at least part of chips to be transferred of the chip array to be transferred are separated from the flexible membrane of the transfer device to the target substrate under the action of the thrust force and gravity.
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| CN202110178478.3A CN112820671A (en) | 2021-02-09 | 2021-02-09 | Transfer device, transfer system and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823997A (en) * | 2022-05-26 | 2022-07-29 | 东莞市中麒光电技术有限公司 | Chip transfer method |
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