CN112817075A - Tunable and directionally-generated on-chip diffraction-free beam device and implementation method thereof - Google Patents
Tunable and directionally-generated on-chip diffraction-free beam device and implementation method thereof Download PDFInfo
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Abstract
The invention provides a tunable and directionally-generated on-chip diffraction-free beam device and an implementation method thereof. The method is characterized in that: the tunable and directionally generated on-chip diffraction-free beam device structure comprises a substrate 1, a nano metal film 2 and a nano structure array 3; the nanostructure array 3 comprises two sub-arrays 3-1, 3-2 with different responses to different polarization states of the incident light, such that the responses of the different polarization states have a spatial discrimination, and the nanostructure array 3 has a function similar to a spatial lens. The specific implementation method is that a nano-structure array 3 is obtained on the surface of a nano-metal film 2 by a focused ion beam etching mode, incident light with a specific polarization state is input from the lower surface of a substrate 1, an input signal forms a Surface Plasmon Polariton (SPPs) light field on the surface of the nano-metal film 2, the generated SPPs light field is focused to form a non-diffraction light beam due to the special arrangement mode of the nano-structure array 3, and the polarization state and the incident angle of the incident light are changed so as to adjust the emission direction of the non-diffraction light beam.
Description
(I) technical field
The invention relates to the fields of all-optical calculation and all-optical information processing, in particular to a method for manufacturing an on-chip device for generating a special light field.
(II) background of the invention
Due to the disadvantages of long response time and high heat loss of electronic components in the conventional communication system, the communication speed of the communication system using the conventional electronic components has reached a bottleneck and has high energy loss. On-chip optics is an effective solution to these problems, and therefore all-optical communication is considered as a next-generation information processing technology. The generation and transmission of on-chip optical signals are one of the core technologies of all-optical communication, and how to effectively generate optical signals and ensure that the optical signals can be received and processed by the next-stage device becomes a leading-edge hotspot which is widely researched in recent years.
SPPs are optical fields which are generated by forced vibration of free electrons in the metal under the excitation of incident photons and are locally in the sub-wavelength scale range of the metal and the medium surface, and have strong optical field enhancement effect. Because of these excellent characteristics, SPPs are widely used in the design of photonic devices on chip, such as optical switches [ Scientific Reports 2017,743723; scientific Reports 2013,31541 ], optical logic gate [ Nanoscale, 2018,10, 4523; nano Letters,2012,12, 5784-; laser & Photonics Reviews,2018,12, 1700331.1-1700331.5 ], and the like. However, under the condition of no restriction, the SPPs optical field generated by the metal surface micro-nano structure is a plane wave which is transmitted to multiple directions on the surface of the metal medium, and the requirement of on-chip optical signal adjustability and controllability in practical application is not met, so that the directional generation of the SPPs is a key scientific problem. In 2013, there is a report on Science that the emission directions of SPPs can be adjusted by constructing a special geometric array structure by inputting incident light of different circular polarization states [ Science,2013,340,331 ]. In recent years, researchers have designed surface plasma vortex field generating devices that can operate in the terahertz band by using this principle, and the geometric center of the device will generate surface plasma vortex fields of different orders under different incident circularly polarized light [ advanced Optical Materials,2019,7,1900713 ]. However, the polarization-sensitive SPPs optical field directional emission device designed above can only realize two-direction modulation on SPPs on the surface of a metal medium, and still cannot meet the requirements of practical application. In order to realize flexible modulation of the emission direction of the SPPs optical field, researchers designed SPPs optical field generation devices sensitive to more polarization states in 2019. The cross-shaped rectangular nanometer groove is utilized to realize the adjustment of the emission direction of the SPPs light field in the first quadrant, and has higher adjustment flexibility [ Laser & Photonics Reviews,2020,14,2000076 ].
However, the SPPs optical field generated by the on-chip optical device that can control the emission direction of the SPPs optical field has little anti-interference capability. When other obstacles exist on the propagation path, the optical field of the SPPs is damaged, so that the next-stage optical device cannot receive the optical signal and the information processing flow is interrupted, and the on-chip optical devices have poor robustness due to the defect. Therefore, researchers need to know how to generate SPPs light fields with strong anti-interference capability. In space optics, various diffraction-free optical fields with strong interference resistance, such as bessel beams, airy beams, etc., have been constructed. However, their generation depends on large-sized space devices such as liquid crystal modulators, phase plates, and axicons, and cannot be directly applied to the generation of on-chip diffraction-free beams. Therefore, researching how to construct a special geometric structure to modulate the SPPs light field and further generate the diffraction-free light beam is an effective way for improving the anti-interference capability of the SPPs light field. Studies have reported that by fabricating a ridge structure on a metal thin film, the SPPs beam can become a zero-order or first-order bessel beam, and the zero-order bessel SPPs beam can reduce diffraction effect when passing through a cylindrical barrier [ Optics Letters,2013,38, 905-. Although research reports in recent years show that the generation of zero-order bessel-like undiffracted SPPs beams is controlled in two directions, the degree of freedom of regulation is still insufficient, and unfortunately, when the zero-order bessel-like undiffracted SPPs beams are emitted along a certain direction, first-order bessel-like SPPs beams are generated in the opposite direction, which brings about strong background interference [ Nanomaterials,2018,8,975 ]. Therefore, how to obtain the diffraction-free SPPs structured light beam with adjustable propagation direction is a problem to be solved urgently.
Against the above background, the present invention provides a tunable directionally-generated on-chip diffraction-free beam device and a method for implementing the same. The on-chip diffraction-free SPPs light beam generating device provided by the invention can realize the adjustment of the emission direction of the diffraction-free SPPs light beam in a two-dimensional plane of the surface of a metal medium by changing the polarization state of incident light on the basis of generating the diffraction-free SPPs light beam, which is essentially different from the previous research. In performance, the propagation distance of the non-diffraction SPPs light beam generated by the invention is more than 10 microns, and a good foundation is laid for the cascade connection of the on-chip optical devices; and by changing the incident angle of incident light, the SPPs non-diffraction light beams generated by the invention can realize the continuous adjustment of the propagation direction, and lay a good foundation for the distribution processing of on-chip optical signal routing. Therefore, the tunable and directionally-generated on-chip diffraction-free beam device and the implementation method thereof provided by the invention have very important application values in all-optical calculation and all-optical information processing based on-chip polarization photonic devices, especially polarization routing photonic devices in the future.
Disclosure of the invention
The invention aims to provide a device for generating on-chip diffraction-free light beams in a tunable and directional mode and an implementation method thereof.
The purpose of the invention is realized as follows:
the tunable and directionally-generated on-chip diffraction-free beam device structure comprises a substrate 1, a nano metal film 2 and a nano structure array 3. The input signal substrate 1 is incident from the lower surface, the nano-structure array 3 on the surface of the nano-metal film 2 enables the incident light to generate SPPs on the surface of the nano-metal film 2, and the wavelength of the incident light and the wavelength of the generated SPPs meet the requirement
Wherein λ0Represents the wavelength of incident light,. epsilonm' represents the real part of dielectric constant, ε, of the nanometal film 2dRepresenting the dielectric constant of the medium. The basic structure of the nanostructure array 3 is a pair of rectangular nano-grooves having a horizontal distance S therebetween and a specific rotation angle α1、α2SPPs can be generated only by polarized light components perpendicular to the rectangular nano-grooves, so that the SPPs light fields generated by the rectangular nano-grooves with different rotation angles have different geometric initial phases
And
as the SPPs optical field generated on the surface of the nano metal film 2 can be regarded as plane wave transmission, according to the Huygens principle, the SPPs optical fields generated by the two rectangular nano grooves can interfere by designing the rotating angles and the intervals of the two rectangular nano grooves, and when the SPPs optical field is used, the SPPs optical field can be regarded as plane wave transmission
When the constructive interference condition is satisfied in one direction and the destructive interference condition is satisfied in the opposite direction, it is possible to realize propagation of SPPs in a single direction. Preferably, the invention is that alpha1＝π/4,α2For left-handed circularly polarized light incidence, the initial phase of the SPPs light field generated by the two rectangular nano-grooves is phi (alpha)1)＝π/4,φ(α2) -pi/4, when the transverse (x-axis) distance between two rectangular nano-grooves is λsppAt the time of/4, the phase difference of SPPs generated by the two rectangular nanometer grooves in the left and right directions is respectively delta phileft＝0,ΔφrightPi. Therefore, for the case of left-handed circularly polarized light incidence, the base structure of the nanostructure array 3 enables the SPPs on the surface of the nano metal film to satisfy the constructive interference condition on the left side of the rectangular nano groove and satisfy the destructive interference condition on the right side of the rectangular nano groove, and finally the left emission of the SPPs light field on the surface of the nano metal film 2 is realized; for the case of right-handed circularly polarized light incidence, the SPPs are emitted in the opposite direction.
The basic structures that make up the nanostructure array 3 have a special arrangement for producing an on-chip diffraction-free beam. Firstly, rectangular nanometer grooves are arranged in an array mode in the longitudinal direction (y axis), and the arrangement enables incident light in a specific polarization state to generate a large-area directional SPPs light field on the surface of the nanometer metal film 2; secondly, the rectangular nanometer groove arrays above the x axis and below the x axis rotate by an angle theta along the clockwise/anticlockwise direction by taking the coordinate axis center as a rotating shaft, at the moment, directional SPPs light fields generated by the two rectangular nanometer groove arrays can interfere, and constructive interference occurs when the phase difference between the SPPs light fields generated by the rectangular nanometer groove arrays on the upper side and the lower side of the x axis is integral multiple of 2 pi. And when the initial phase of the SPPs light fields generated by the two rectangular nanometer groove arrays is the same, the interference bright fringes are positioned on the x axis. Since each pair of rectangular nano-grooves can be regarded as a wavelet source of the SPPs optical field, the nano-structure arrays 3-1 and 3-2 have the function similar to a space cone lens, and can form a diffraction-free light beam with self-healing property. The nano-metal film 2 is etched with the nano-structure arrays 3-1 and 3-2 which are symmetrical about the y axis, and the excitation directions of the nano-structure arrays 3-1 and 3-2 to light with the same circular polarization state are the same, which is specifically shown in the fact that under the condition of left-handed circularly polarized light incidence, the SPPs optical fields generated by the nano-structure arrays 3-1 and 3-2 are all transmitted to the left. And because the rectangular nanometer groove array of the nanometer structure array 3-1 positioned above the x axis and the rectangular nanometer groove array of the nanometer structure array 3-2 positioned below the x axis have the same modulation effect on the incident light with the same polarization state, namely the transmission directions of the generated SPPs light fields are consistent, the SPPs light fields generated by the two rectangular nanometer groove arrays positioned on the same side of the x axis also interfere to form the diffraction-free light beams, and the diffraction-free light beams have the same transmission directions as the diffraction-free light beams generated by the 3-1 and the 3-2.
When the included angle between the incident direction and the normal vector (z axis) of the lower surface of the substrate is not zero, the increased in-plane vector on the surface of the nano metal film 2 will cause the wave vector direction of the SPPs optical field generated by the rectangular nano groove to change, but the size of the SPPs optical field does not change. Therefore, for the incident light of a specific polarization state, when the incident angle is not zero, the optical field of SPPs generated by the basic rectangular nano-groove structure constituting the nano-structure array 3 no longer propagates along the positive direction or the negative direction of the x-axis, but has a certain rotation angle β, so that the non-diffracted light beam generated by the nano-structure array 3 can be emitted not only along the positive direction or the negative direction of the x-axis, but also along other directions in the two-dimensional plane.
Compared with the prior art, the invention has the outstanding advantages that:
(1) compared with other on-chip diffraction-free beam generation devices, the invention realizes the adjustability and controllability of the emission direction of the diffraction-free beam; (2) the invention realizes the directional emission of a plurality of non-diffraction light beams by designing the arrangement mode of the rectangular nanometer grooves; (3) in the invention, the energy of the SPPs light field generated under a specific incidence condition is concentrated in a target area, which is specifically shown in the way that most of the light field energy is distributed in a non-diffraction beam emission area, and the light intensity outside the emission area is almost 0.
(IV) description of the drawings
FIG. 1 is a schematic diagram of a device for generating on-chip diffraction-free beams in a tunable and directional mode and a method for realizing the device.
Fig. 2 is a schematic diagram of an array arrangement of substantially rectangular nano-grooves constituting a nano-structure array 3 in a tunable and directionally produced on-chip diffraction-free beam device and a method for implementing the same.
FIG. 3 is a simulation result of the directional emission of a single non-diffracted beam in a tunable and directionally generated on-chip non-diffracted beam device and a realization method thereof, wherein the incident condition is that left-handed circularly polarized light is vertically incident.
Fig. 4 is a simulation result of self-healing of the diffraction-free beam generated by the tunable and directionally-generated on-chip diffraction-free beam device behind the obstacle when the incident light is left-handed circularly polarized light and vertical in the implementation method of the device.
FIG. 5 is a simulation result of the directional emission of multi-directional non-diffracted beams in a tunable directionally generated on-chip non-diffracted beam device and a method for implementing the same, wherein the incident condition of the graph (a) is that left-handed circularly polarized light is incident obliquely by 5 degrees; the incidence condition of graph (b) is that the left-handed circularly polarized light is obliquely incident by minus 5 degrees; the incidence condition of the graph (c) is that the right-handed circularly polarized light is incident obliquely by 5 degrees; the incidence condition of the graph (d) is that the right-handed circularly polarized light is obliquely incident at minus 5 degrees.
Fig. 6 is a simulation result of self-healing of the diffraction-free beam generated by the tunable and directionally-generated on-chip diffraction-free beam device behind the obstacle when the incident light is right-handed circularly polarized light and the incident angle is 5 degrees in the implementation method of the device.
FIG. 7 is a simulation result of directional emission of multi-directional multiple non-diffracted beams in tunable and directionally-generated on-chip non-diffracted beam device and the implementation method thereof, wherein the incidence condition of the graph (a) is that left-handed circularly polarized light is incident obliquely by 5 degrees; the incidence condition of graph (b) is that the left-handed circularly polarized light is obliquely incident by minus 5 degrees; the incidence condition of the graph (c) is that the right-handed circularly polarized light is incident obliquely by 5 degrees; the incidence condition of the graph (d) is that the right-handed circularly polarized light is obliquely incident at minus 5 degrees.
Fig. 8 is a simulation result of self-healing of multiple non-diffracted light beams behind an obstacle, which is generated when incident light is right circularly polarized light and an incident angle is 5 degrees in a tunable and directionally generated on-chip non-diffracted light beam device and an implementation method thereof, wherein graphs (a), (b) and (c) respectively represent simulation results of self-healing of the non-diffracted light beams below, in the middle and above, behind the obstacle.
(V) detailed description of the preferred embodiments
The present invention will be described in detail below by taking as an example a device that can generate multiple on-chip diffraction-free beams in a tunable orientation and a method for implementing the same.
As shown in FIG. 1, the device for generating a plurality of diffraction-free light beams on a chip in a tunable and directional mode in the embodiment comprises a silicon dioxide substrate 1, a nanogold film 2 and nanostructure arrays 3-1 and 3-2. The basic structure of the nanostructure arrays 3-1, 3-2 is a pair of rectangular nanochannels. The single rectangular nanometer groove has a width of 40nm, a length of 200nm and a rotation angle of 45 degrees or-45 degrees, and is etched on a nanometer gold film 2 with a height of 200nm, the nanometer gold film 2 is positioned on a silicon dioxide substrate 1, and the transverse distance between the same pair of rectangular nanometer grooves is lambdasppAnd 4, the longitudinal distance is 150nm, and the structure is shown in figure 2. For left-handed circularly polarized light, the SPPs light field generated by a pair of rectangular nano-grooves will be emitted along the negative x-axis. The rectangular nanometer grooves are arranged in an array mode in the y-axis direction to form a rectangular nanometer array, and then the rectangular nanometer array is rotated by 10 degrees or 10 degrees to 10 degrees around the origin of coordinates to obtain the nanometer structure arrays 3-1 and 3-2. Therefore, when the incident light is left-handed circularly polarized light, the emission directions of the SPPs generated by the nanostructure arrays 3-1 and 3-2 are both along the negative x-axis. Meanwhile, when left-handed circularly polarized light is vertically incident with the lower surface of the substrate, SPPs generated by rectangular nanostructure arrays positioned at the upper side and the lower side of the x axis in the nanostructure array 3-1 can be converged in the negative direction of the x axis to form interference; and the rectangular nano-structure on the upper and lower sides of the x-axis in the nano-structure array 3-2SPPs generated by the rice structure array are diverged in the negative direction of the x axis, and cannot form interference; when the incidence condition is that right-handed circularly polarized light vertically enters, the nanostructure array 3-2 interferes in the positive direction of the x axis to form a non-diffraction light beam, and the nanostructure array 3-1 cannot form the non-diffraction light beam in the positive direction of the x axis. The lateral distance between the nanostructure arrays 3-1 and 3-2 is 1 micrometer, under the condition, the rectangular nanostructure arrays positioned on the same side of the x axis can generate diffraction-free light beams along different directions of the x axis under the vertical irradiation of different circularly polarized light, and further realize the directional emission of a plurality of diffraction-free light beams along the positive direction or the negative direction of the x axis.
Further, the incident angle is changed in the y-z plane to make the included angle gamma between the incident light and the z axis not 0, and the incident light has an in-plane vector k on the surface of the nano gold film 2inThe relationship between the in-plane vector and the wave vector of the incident light is kin＝koSin (γ), where the angle β between the propagation direction of the SPPs optical field generated by the rectangular nano-array and the positive or negative direction of the x-axis is arcsin (k)osin(γ)·cos(θ)/kspp) And an included angle beta is formed between the emission direction of the finally formed diffraction-free light beam and the positive direction or the negative direction of the x axis, so that the directional emission of a plurality of diffraction-free light beams on the multi-directional chip is realized.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. A tunable and directional on-chip diffraction-free beam generating device and a realization method thereof are characterized in that: the tunable directionally-generated on-chip diffraction-free light beam device comprises a substrate 1, a nano metal film 2 and a nano structure array 3, wherein the nano structure array 3 has different responses to different polarization states of incident light, and enables the responses of the different polarization states to have spatial discrimination, and the nano structure array 3 has a function similar to a spatial lens, so that diffraction-free light beams are formed by interference among SPPs light fields generated by different nano structure sub arrays; the specific implementation method is that a nano-structure array 3 is obtained on the surface of a nano-metal film 2 in a focused ion beam etching mode, incident light beams in a specific polarization state are input from the lower surface of a substrate 1, the incident light generates SPPs light fields on the surface of the nano-metal film 2 due to the nano-structures on the surface of the nano-metal film 2, and meanwhile, the special arrangement mode of the nano-structure array 3 enables the SPPs light fields generated by different nano-structure subarrays 3-1 and 3-2 to interfere with each other to form a non-diffraction light beam, so that the polarization state and the incident angle of the incident light are changed, and the emission direction of.
2. The device for tunable directional generation of on-chip diffraction-free beams and the implementation method thereof according to claim 1, wherein: the basic structure of the nanostructure array 3 has different responses to incident lights with different polarization states, which is embodied in that SPPs light fields generated by the incident lights with different polarization states on the surface of the nano metal film 2 are emitted along different directions under the action of the nanostructure array 3.
3. The device for tunable directional generation of on-chip diffraction-free beams and the implementation method thereof according to claim 1, wherein: the arrangement mode of the nano-structure array 3 meets two conditions, and the SPPs light field generated by the single nano-structure array 3 has no diffraction characteristic; the light fields of SPPs generated by the multiple nanostructure arrays 3-1, 3-2 interfere with each other to generate a diffraction-free light beam.
4. The device for tunable directional generation of on-chip diffraction-free beams and the implementation method thereof according to claim 1, wherein: changing the polarization state of the incident light as well as the angle of incidence can change the direction of emission of the undiffracted light beam.
5. The device for tunable directional generation of on-chip diffraction-free beams and the implementation method thereof according to claim 1, wherein: the material of the nano metal film 2 can be gold or silver.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108983443A (en) * | 2018-08-20 | 2018-12-11 | 德州学院 | Metasurface for generating diffraction-free optical vortex lattice and design method thereof |
| CN110133856A (en) * | 2019-05-27 | 2019-08-16 | 暨南大学 | A kind of system and method generating salt free ligands vector Bezier light field |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108983443A (en) * | 2018-08-20 | 2018-12-11 | 德州学院 | Metasurface for generating diffraction-free optical vortex lattice and design method thereof |
| CN110133856A (en) * | 2019-05-27 | 2019-08-16 | 暨南大学 | A kind of system and method generating salt free ligands vector Bezier light field |
Non-Patent Citations (2)
| Title |
|---|
| SEN WANG: "Polarization-based dynamic manipulation of Bessel-like surface plasmon polaritons beam", 《OPTICS EXPRESS》 * |
| XUESI ZHAO: "Polarization-controllably launching localized cosine-Gauss beam with spatially varied metallic nano-apertures", 《OPTICS EXPRESS》 * |
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Application publication date: 20210518 |