CN112813414B

CN112813414B - Chemical vapor deposition system

Info

Publication number: CN112813414B
Application number: CN202011618732.9A
Authority: CN
Inventors: 丁欣
Original assignee: Shanghai Aiyan Semiconductor Co ltd
Current assignee: Shanghai Aiyan Semiconductor Co ltd
Priority date: 2020-12-30
Filing date: 2020-12-30
Publication date: 2022-12-09
Anticipated expiration: 2040-12-30
Also published as: CN112813414A

Abstract

The invention discloses a chemical vapor deposition system, comprising: the reaction chamber comprises a hollow shell, the shell is horizontally arranged, an air inlet, an air outlet and/or an operation opening are/is formed in two sides of the hollow shell, and air enters the reaction chamber from the air inlet along the horizontal direction; the wafer to be processed is placed on the first pedestal and the second pedestal and is positioned in the upper cavity, wherein the first pedestal comprises a first rotatable pedestal and a first outer box at the periphery of the first rotatable pedestal, the second pedestal comprises a second rotatable pedestal and a second outer box at the periphery of the second rotatable pedestal, the first outer box is in contact with the second outer box or has a first gap, the first rotatable pedestal and the second rotatable pedestal rotate oppositely at the gas flow inlet, and the rotating direction is the same as the gas flow direction at the position where the first rotatable pedestal and the second rotatable pedestal are closest to each other.

Description

Chemical vapor deposition system

Technical Field

The invention relates to the technical field of semiconductor manufacturing. In particular, the present invention relates to a chemical vapor deposition system.

Background

The equipment of modern semiconductor factories is placed in ultra-clean plants with high cleanliness. The construction and use costs of hundreds and thousands of ultra-clean plants are very high. It is therefore desirable as a user of a chip factory to use a chip manufacturing apparatus that achieves as large a throughput as possible with as small a footprint as possible.

Us patent 5261960 discloses a reaction chamber for a CVD system as shown in fig. 1. The reaction chamber has a rectangular cross-section. The wafer pedestal is mounted in the rectangular cross-sectional area.

Fig. 2 shows a schematic cross-sectional view of a conventional reaction chamber. Fig. 3 is a schematic perspective sectional view of a conventional reaction chamber. The susceptor 201 and the wafer 202 are placed therein from one side of the reaction chamber 203. A reaction gas 204 is introduced into the reaction chamber 203 from one side thereof. The heater 205 is placed outside the reaction chamber.

In the above and other various existing chemical vapor deposition apparatuses, a high-purity quartz (silicon) tube is largely used as a reaction chamber. The substrates for processing, the wafer boat, and various sensors need to be put in from one end of the quartz tube to be manufactured. When in repair or maintenance, the aforementioned substrate, boat, susceptor, various sensors, and the like are also detached from one end of the quartz tube. That is, the equipment is located at one end of the quartz tube, and a sufficient clearance (not smaller than the size of the substrate, the wafer boat or the susceptor) is required to ensure normal operation in daily life. If the quartz tube is horizontally arranged, the maintenance space required for loading the substrate, the wafer boat or the pedestal occupies more transverse space, so that the chemical vapor deposition equipment occupies larger projection area, and the construction and use cost of a chip factory is greatly increased.

In addition, modern chip manufacturing equipment largely uses a cluster type multi-reaction-chamber design, and a quartz tube leads the floor area of a single reaction chamber to be increased, so that the cluster type design is also large in size, and even is difficult to integrate into multi-chamber cluster type equipment.

Meanwhile, the reaction gas at the downwind side of the autorotation of the wafer has a local low temperature region due to the thermodynamic distribution of the reaction chamber for horizontally rotating side gas inlet, so that the uniformity of the formed film is unsatisfactory. FIG. 11 shows the temperature contour of a single chip with the susceptor not rotated and rotated at 30 rpm. As shown in fig. 11, the lower arrows indicate the flow direction of the horizontally introduced reaction gas. The base rotates to deflect the cold air flow to one side. The invention designs a series of temperature compensation mechanisms based on the two counter-rotating wafers to improve the temperature of the reaction gas in the low-temperature region, thereby improving the film-forming uniformity of chemical vapor deposition.

Disclosure of Invention

In view of the problems in the prior art, according to one aspect of the present invention, there is provided a chemical vapor deposition system including:

the reaction chamber comprises a hollow shell, the shell is horizontally arranged, an air inlet, an air outlet and/or an operation opening are/is formed in two sides of the hollow shell, and air enters the reaction chamber from the air inlet along the horizontal direction;

the wafer to be processed is placed on the first pedestal and the second pedestal and is positioned in the upper cavity, wherein the first pedestal comprises a first rotatable pedestal and a first outer box at the periphery of the first rotatable pedestal, the second pedestal comprises a second rotatable pedestal and a second outer box at the periphery of the second rotatable pedestal, the first outer box is in contact with the second outer box or has a first gap, the first rotatable pedestal and the second rotatable pedestal rotate oppositely at the gas flow inlet, and the rotating direction is the same as the gas flow direction at the position where the first rotatable pedestal and the second rotatable pedestal are closest to each other.

In one embodiment of the present invention, the first rotatable base and the second rotatable base are connected to a rotating rod, and are rotated and lifted by the rotating rod, and the thermocouple is disposed under the first outer box and/or the second outer box.

In one embodiment of the invention, the adjacent surfaces of the first base and the second base are parallel to each other and are not perpendicular to the top surface.

In one embodiment of the present invention, the rim of the first base has a first step facing downward from the upper surface, the rim of the second base has a second step facing upward from the lower surface, the rim of the first base and the rim of the second base partially overlap such that the rim portion of the second base overlaps the horizontal portion of the first step, and an outermost side of the rim of the first base has a second gap from a vertical surface of the second step and an outermost side of the rim of the second base has a third gap from a vertical surface of the first step.

In one embodiment of the invention, the top surfaces of the first and second bases are contoured as right trapezoids, the first and second bases being adjacent at the hypotenuse of the right trapezoid.

In one embodiment of the present invention, the chemical vapor deposition system further comprises one or more fins disposed between the first susceptor and the second susceptor near the gas inlet and protruding upward.

In one embodiment of the invention, the bottom of the fin comprises a bottom plate perpendicular to the raised part of the fin and a lower fin below the bottom plate, the bottom plate is lapped on the first base and the second base at two sides, the lower fin passes through a gap between the first base and the second base, and the thickness of the lower fin is smaller than the width of the gap between the first base and the second base; the width of the bottom plate is greater than the width of the gap between the first base and the second base, so that when the lower fin is inserted into the gap, two sides of the bottom plate are respectively contacted with the edges of the first base and the second base, and the supporting fin is positioned above the first base and the second base.

In one embodiment of the invention, the bottom of the fin is wedge-shaped and inserted into the gap between the first base and the second base, and the edges of the first base and the second base, which are in contact with the fin, have slopes matching the wedge-shape.

In one embodiment of the invention, the bottom of the hollow housing is flush with the top of the base in the region from the air inlet to the base, and the housing has vertically downward side walls near the base so that the bottom of the housing is stepped down to form a lower cavity below the base.

In one embodiment of the present invention, the chemical vapor deposition system further comprises: and the stop or the L-shaped baffle is arranged in the area from the air inlet to the base of the hollow shell, and the top surface of the stop or the L-shaped baffle is flush with the top of the base.

In one embodiment of the invention, the top or bottom of the hollow shell has an opening, and further comprises a cover covering the opening, the edge of the cover overlaps with the edge of the opening of the hollow shell, the overlapped part is a sealing surface, and a sealing ring is arranged between the sealing surfaces to realize sealing.

In an embodiment of the invention, the fins and/or the non-linear infrared heating lamp source with the enlarged heat exchange area, the added points and the linear infrared heater form a temperature compensation mechanism for the low-temperature region of the reaction gas of the horizontal contra-rotating double-base reaction cavity.

Drawings

To further clarify the above and other advantages and features of embodiments of the present invention, a more particular description of embodiments of the invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.

Fig. 1 shows a schematic cross-sectional view of a reaction chamber according to the prior art.

Fig. 2 shows a schematic cross-sectional view of a conventional reaction chamber.

Fig. 3 is a schematic perspective sectional view of a conventional reaction chamber.

FIG. 4A shows a top view of a reaction chamber 400 according to one embodiment of the invention.

FIG. 4B shows a side view of the reaction chamber 400 according to one embodiment of the invention.

FIG. 4C shows a cross-sectional view of reaction chamber 400 along B-B, according to one embodiment of the present invention.

Fig. 5A illustrates a bottom view of a reaction chamber 500 according to another embodiment of the present invention.

FIG. 5B shows a side view of the reaction chamber 500 according to one embodiment of the invention.

FIG. 5C shows a cross-sectional view of reaction chamber 500 along B-B, according to one embodiment of the present invention.

FIG. 6A shows a top view of a reaction chamber 600 having a cooling device and protruding ears according to one embodiment of the invention.

FIG. 6B shows a side view of reaction chamber 600 with cooling devices and protruding ears according to one embodiment of the invention.

FIG. 6C shows a cross-sectional view along B-B of reaction chamber 600 having a cooling device and protruding ears according to one embodiment of the invention.

Fig. 7A and 7B show schematic views of the cooling device 620 and O-ring 610 of fig. 6A-6C.

Fig. 8 shows a schematic perspective exploded view of a reaction chamber 800 according to an embodiment of the present invention.

FIG. 9A shows a top view of a reaction chamber 900 having an arcuate top and bottom according to one embodiment of the invention.

FIG. 9B shows a side view of reaction chamber 900 according to one embodiment of the present invention.

FIG. 9C shows a cross-sectional view of reaction chamber 900 along B-B, according to one embodiment of the present invention.

FIG. 10A shows a schematic perspective view of a reaction chamber with arches and ribs according to one embodiment of the present invention.

FIG. 10B shows a schematic perspective view of a reaction chamber with an arch and ribs according to one embodiment of the invention.

FIG. 10C shows a schematic perspective view of a reaction chamber with an arch and ribs according to one embodiment of the invention.

FIG. 10D shows a schematic perspective view of a reaction chamber with arches and ribs according to one embodiment of the present invention.

FIG. 11 shows a temperature isotherm representation of a single chip with the susceptor not rotated and rotated at 30 rpm.

FIG. 12A shows a schematic view of a chemical vapor deposition system according to one embodiment of the invention.

FIG. 12B shows a schematic view of a chemical vapor deposition system according to one embodiment of the invention.

FIG. 13 shows a schematic cross-sectional view and a top view of two susceptors placed within a reaction chamber according to one embodiment of the present invention.

FIG. 14 shows a partial schematic view of two base abutments according to one embodiment of the present invention.

FIG. 15 shows a partial schematic view of two base abutments according to another embodiment of the present invention.

FIG. 16 shows a partial schematic view of two base abutments according to yet another embodiment of the present invention.

Figure 17A shows a top view of the addition of fins at the front of the base according to one embodiment of the present invention.

Figure 17B illustrates a cross-sectional view of the addition of fins at the front end of the base, according to one embodiment of the present invention.

Figure 17C illustrates a bottom view of the addition of fins to the front end of the base according to one embodiment of the present invention.

Figure 18 illustrates a schematic view of the assembly of a fin with a base, according to one embodiment of the present invention.

Figure 19 illustrates a schematic view of a fin and base assembly according to another embodiment of the present invention.

FIG. 20 illustrates a top, cross-sectional, front, and bottom view of a base with a minimized base center-to-center spacing according to one embodiment of the present invention.

Fig. 21 shows a partially enlarged view of the connection portion of the base where the center-to-center distance of the base is minimized.

FIG. 22 illustrates a top, cross-sectional, front, and bottom view of bases connected in diagonal lines of adjacent bases, according to one embodiment of the invention.

Fig. 23 illustrates a top view, a cross-sectional view, and a perspective view of a reaction chamber 2300, according to one embodiment of the invention.

FIG. 24 shows a top view, a cross-sectional view and a perspective view of a variation of the reaction chamber shown in FIG. 23.

FIG. 25 shows a top view, a cross-sectional view and a perspective view of another variation of the reaction chamber shown in FIG. 23.

FIG. 26 shows a top view, a cross-sectional view and a perspective view of a variation of the reaction chamber shown in FIG. 25.

Fig. 27A to 27D are schematic views showing the layout of heaters on a reaction chamber according to an embodiment of the present invention.

Fig. 28 shows a schematic diagram of a thermocouple layout in which the connecting lines of adjacent pedestals are diagonal.

FIG. 29A shows a top view of a base sleeve according to one embodiment of the invention.

FIG. 29B illustrates a back view of a base sleeve according to one embodiment of the invention.

FIG. 29C illustrates a bottom view of a base sleeve according to one embodiment of the invention.

FIG. 29D shows a partial cross-sectional view of the groove and plug 2920.

Fig. 30A shows a schematic perspective view of a stopper according to an embodiment of the invention.

Fig. 30B illustrates a top view and a front view of a plug according to an embodiment of the invention.

Fig. 30C illustrates a bottom view of a plug according to an embodiment of the invention.

FIG. 31A illustrates a top view of a dual susceptor according to one embodiment of the present invention.

FIG. 31B shows a perspective view of a dual base, according to one embodiment of the invention.

Detailed Description

In the following description, the invention is described with reference to various embodiments. One skilled in the relevant art will recognize, however, that the embodiments may be practiced without one or more of the specific details, or with other alternative and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the embodiments of the invention. However, the invention may be practiced without specific details. Further, it should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

Reference in the specification to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

Aiming at the problem of overlarge occupied area of a reaction cavity in the prior art, one embodiment of the application provides that a horizontal quartz tube is decomposed into an upper part and a lower part, and the two parts are directly sealed through a sealing ring. The base, the baffle plate, various sensors and the like are arranged from the upper part, namely the originally required horizontal maintenance space is changed to the upper part of the reaction cavity, so that a large amount of occupied area is saved.

However, quartz tube reaction chambers are commonly used in high temperature processes, with typical reaction temperatures in the range of 400-1650 degrees Celsius, and even higher. The operating temperature of the quartz tube itself is also often as high as 700 degrees celsius, far exceeding the operating temperature of O-ring seals used in the semiconductor industry. Therefore, a scheme that the quartz reaction chamber can work at high temperature and the sealing ring can work in a proper lower temperature interval needs to be further provided.

FIG. 4A shows a top view of a reaction chamber 400 according to one embodiment of the invention. FIG. 4B shows a side view of the reaction chamber 400 according to one embodiment of the invention. FIG. 4C shows a cross-sectional view of reaction chamber 400 along B-B, according to one embodiment of the present invention.

The reaction chamber 400 is a hollow case. For example, the reaction chamber 400 is shaped as a mirror-symmetrical body having a central axis, such as a hollow cylinder or a rectangular parallelepiped. The reaction chamber 400 may be a non-symmetrical body in shape, and may be a reaction chamber of the present invention as long as it has a space sufficient for work inside.

In the embodiment shown in fig. 4A to 4C, the reaction chamber 400 is a hollow rectangular parallelepiped having a rectangular cross-sectional shape. In other embodiments, the cross-sectional shape of the reaction chamber 400 may be circular or other shapes. It should be understood by those skilled in the art that the present invention has no limitation on the sectional shape of the reaction chamber 400.

The material of the housing of the reaction chamber 400 may be quartz, silicon, ceramic, etc.

The components of the reaction chamber 400 are sealed from the external environment by sealing rings or the like.

The reaction chamber 400 is disposed in a horizontal direction. The susceptor 410 and the wafer 420 to be processed are placed in a horizontal direction within the sealed cavity of the reaction chamber. The material of the base 410 may be a graphite material, but is not limited thereto. A baffle plate is provided in the sealed cavity, extends to the base, and divides the interior into an upper part participating in the reaction and a lower part not participating in the reaction.

Both sides of the reaction chamber 400 may be provided with two

side doors

441 and 442, an intake port, an exhaust port (not shown), and/or an operation port 443, etc. A special isolation valve, such as a gate valve, is usually designed between the side door on the gas inlet side and the reaction chamber, and the wafer is fed into the reaction chamber and then closed to isolate the reaction chamber 400 from the outside, typically 443 is an opening of the isolation valve. The reaction gas for growth flows through the gas inlet port into the surface of the substrate in the horizontal direction. The shape of the air inlets may be slits or rectangles parallel to the silicon wafer. More openings with complex shapes can be arranged in the slit so as to adjust parameters such as flow velocity distribution of gas distribution and the like. The two

side doors

441 and 442 form a seal with the main housing of the reaction chamber 400 by means of seal rings. The wafer is put into the reaction chamber 400 through the process port 443, or the wafer is taken out of the reaction chamber 400 through the process port 443. The sealed cavity is also provided with various sensors, a wafer rotating mechanism and the like, which are not shown in the figure for the sake of simplicity. In an embodiment of the present invention, a kovar alloy may be used for a portion of the reaction chamber 400. The kovar alloy can be fusion welded to the quartz.

The top of the reaction chamber 400 has an upper cover 430 that can be opened and closed. As shown in fig. 4C, the top of the reaction chamber 400 has an opening, the upper cover 430 covers the opening, and the edge of the top opening of the reaction chamber 400 overlaps with the edge of the upper cover. In other words, the intersection of the upper cover 430 and the top of the reaction chamber 400 is a continuous closed loop. The packing 431 is provided at an overlapping position of the edge of the opening and the edge of the upper cover so that air-tightness is achieved when the upper cover 430 is covered on the opening. The seal 431 may be an O-ring seal on a continuous closed ring or similar structure. The heaters 450 are disposed at the top and bottom of the reaction chamber 400. The heater 450 may be an infrared halogen heating lamp in the shape of a dot, a wire, a ring, a resistance heater, or an induction coil.

At the overlapping position of the opening edge and the upper lid edge, a complete sealing surface and/or O-ring groove is machined, so that sealing can be achieved by means of a sealing ring, i.e. an O-ring on the sealing surface of a continuous closed loop. In the preferred embodiment of the invention, double seal rings can be used between the sealing surfaces to achieve better sealing or to prevent failure of a single seal ring at high temperatures from causing seal failure.

Table 1 shows the parameters of several common O-rings.

As can be seen from Table 1, the maximum temperature of a typical O-ring seal is typically between 220 degrees Celsius and 320 degrees Celsius. High purity non-metal (e.g., high purity quartz) reaction chambers are typically used in high temperature processes, with typical reaction temperatures ranging from 400 to 1650 degrees celsius, and even higher. The operating temperature of the reaction chamber itself is often as high as 700-800 degrees celsius, far exceeding the operating temperature of O-ring seals used in the semiconductor industry.

In the embodiment shown in fig. 4A to 4C, the region where the wafer to be processed is located is a reaction region, and a heater 450 is disposed nearby so as to heat the reaction region. In order to avoid the temperature of the O-shaped sealing ring from being too high, the sealing ring is arranged far away from the reaction zone as far as possible. As can be seen from the top view shown in FIG. 4A, an O-ring 431 is disposed along the edge of the top surface of the reaction chamber.

The housing and the upper cover of the reaction chamber 400 are subjected to sintering molding or hot bending, hot pressing and high-temperature drawing, so that the molding processes such as sheet metal, stamping, casting of complex shapes and the like cannot be performed, and a small amount of turning with simple steps can be performed. The original shape of the composite material is only a plane plate, a cuboid, a cylinder, a drawn ring and a drawn pipe, and the composite material is spliced and formed by welding, gluing and the like.

Fig. 5A illustrates a bottom view of a reaction chamber 500 according to another embodiment of the present invention. FIG. 5B shows a side view of a reaction chamber 500 according to one embodiment of the invention. FIG. 5C shows a cross-sectional view of reaction chamber 500 along B-B, according to one embodiment of the present invention.

The reaction chamber 500 shown in fig. 5A to 5C is similar to the reaction chamber 400 shown in fig. 4A to 4C, except that the opening of the reaction chamber 500 is located at the bottom. The lower cover 510 covers the opening, and the bottom opening edge of the reaction chamber 500 overlaps the lower cover edge. The lower cover 510 is protruded downward at the working area, and the edge of the lower cover extends to both the outside and the upper portion, thereby forming a step at the edge and the middle of the lower cover, forming an ear 520 protruded outside. The intersection of the lower cover 510 and the bottom of the reaction chamber 400 is a continuous closed loop. The packing 511 is provided at an overlapping position of the opening edge and the lower cap edge so that airtightness is achieved when the lower cap 510 is covered on the opening.

In the above embodiments, the top and bottom surfaces of the reaction chamber are substantially flat, and since the reaction chamber is generally operated in a certain vacuum state, in order to increase the strength of the reaction chamber housing, reinforcing ribs may be formed on the top and bottom surfaces of the reaction chamber or the top and bottom surfaces may be protruded to be arched, or even the combination of the arch and the reinforcing ribs.

In some embodiments of the invention, to further reduce the temperature resistance requirements of the seal ring, the sealing surface of the seal ring may be extended outward away from the high temperature zone of reaction. The projecting ears are formed so that the O-ring can operate at a suitable temperature.

In the embodiment of the present invention, the protruding ear portion may be further cooled by water cooling or air cooling, as shown in fig. 6A to 6C. FIG. 6A shows a top view of a reaction chamber 600 having a cooling device and protruding ears according to one embodiment of the invention. FIG. 6B shows a side view of reaction chamber 600 with a cooling device and protruding ears according to one embodiment of the invention. FIG. 6C shows a cross-sectional view along B-B of reaction chamber 600 with cooling devices and protruding ears according to one embodiment of the invention. As can be seen in fig. 6A-6C, the sealing surface expands outward forming protruding ears 630 that keep the seal ring 610 away from the high temperature zone. Cooling

devices

620, 640 and 650 are provided in the vicinity of the sealing ring 610. The

cooling devices

620, 640, and 650 may be cooling water plates or cooling water jackets. For example, the sealing surface may be bolted to metal containing a water cooling circuit to assist in heat dissipation.

Fig. 7A and 7B show schematic views of the cooling device 620 and O-ring 610 of fig. 6A-6C. The O-rings 610 may include a sealing ring for sealing the side door and a sealing ring for sealing the upper cover.

In other embodiments of the present invention, the cooling device 620 may be a metal cooling jacket sandwiched between upper and lower sealing surfaces and having upper and lower sealing surfaces. The metal cooling jacket forms a sliding support surface to absorb the differential expansion between the quartz and the metal. Meanwhile, the sealing failure of the front supporting surface and the rear supporting surface caused by the softening deformation of the thermal expansion of the quartz at high temperature is avoided. Or the cooling water jacket does not contact with the quartz cavity.

Fig. 8 shows a schematic perspective exploded view of a reaction chamber 800 according to an embodiment of the present invention. As shown in FIG. 8, the reaction chamber 800 includes a main housing 810, an outer casing 820, a rotatable base 830, a sealing ring 840, and a cover 850. Both above and below, outer casing 820 and rotatable base 830 are commonly referred to collectively as a base.

FIG. 9A shows a top view of a reaction chamber 900 having an arcuate top and bottom according to one embodiment of the invention. FIG. 9B shows a side view of reaction chamber 900 according to one embodiment of the present invention. FIG. 9C shows a cross-sectional view of reaction chamber 900 along B-B, according to one embodiment of the present invention.

The reaction chamber 900 is a hollow housing. For example, the reaction chamber 900 is shaped as a mirror-symmetrical body having a central axis, such as a hollow cylinder or a rectangular parallelepiped. The reaction chamber 900 may be asymmetric in shape, and may be a reaction chamber of the present invention as long as it has a space sufficient for work inside.

The housing of the reaction chamber 900 may be made of quartz, silicon, ceramic, or the like.

The components of the reaction chamber 900 are sealed by sealing rings to isolate them from the external environment.

As shown in the top view of FIG. 9A, the reaction chamber 900 is horizontally disposed and has four sides, i.e., front, rear, left and right sides. The susceptor 910 and the wafer 920 to be processed are placed in a horizontal direction in a sealed cavity of the reaction chamber. The material of the base 910 may be a graphite material, but is not limited thereto. The sealed cavity has a baffle plate extending to the base to divide the interior into an upper part participating in the reaction and a lower part not participating in the reaction.

The left and right sides of the reaction chamber 900 may be provided with two

side doors

941 and 942, an intake port, an exhaust port (not shown), and/or an operation port 943, etc. The reaction gas for growth flows through the gas inlet port into the surface of the substrate in the horizontal direction. The two

side doors

941 and 942 form a seal with the main housing of the reaction chamber 900 by sealing rings. The wafer is put into the reaction chamber 900 through the handling hole 943, or the wafer is taken out of the reaction chamber 900 through the handling hole 943. Various sensors, wafer rotation mechanisms, and the like are also provided in the sealed cavity, and are not shown in the figure for simplicity of illustration. In embodiments of the present invention, kovar alloys may be used for joints, elbows, etc. between the components. The kovar alloy can be fusion welded to the quartz.

The top of the reaction chamber 900 has an upper cover 930 that can be opened and closed. As shown in fig. 4C, the top of the reaction chamber 900 has an opening, an upper cover 930 is covered on the opening, and the edge of the opening of the top of the reaction chamber 900 overlaps with the edge of the upper cover. In other words, the intersection of the upper cover 930 and the top of the reaction chamber 900 is a continuous closed loop. A packing 931 is provided at an overlapping position of the opening edge and the upper cover edge, thereby achieving airtightness when the upper cover 930 is put on the opening. The sealing ring 931 may be an O-ring or similar structure on a continuous closed ring. Heaters 950 are disposed at the top and bottom of the reaction chamber 900. The heater 950 may be a point, wire, ring shaped infrared halogen heating lamp, a resistance heater, or an induction coil

The top or bottom of the arc is used to resist atmospheric pressure when the internal vacuum is applied. The arc (arch) shapes of the top and bottom of the reaction chamber 900 have symmetrical center lines, respectively, which are orthogonal to each other. The top and bottom linear lamps are parallel to the symmetric central line of their arc surfaces and are orthogonal to each other. The orientation of the top and bottom arches may be interchanged. Specifically, the top arc of the reaction chamber 900 is symmetrically and upwardly protruded from the front and rear sides, and the highest arc surface is located at the center line of the front and rear sides, which is the symmetric center line of the arc surface. The bottom arc of the reaction chamber 900 is symmetrically protruded downwards from the left and right sides, and the arc surface is the lowest at the center line of the left and right sides, which is the symmetric center line of the arc surface.

The top and bottom dome shaped orthogonal design of the reaction chamber 900 has the advantage of facilitating the placement of orthogonal heaters. In some embodiments, the heater is a line heat source, such as a lamp tube. That is, a single linear heat source lamp can be continuously used without designing a lamp having the same shape as an arched curve.

In addition, the top arch of the reaction chamber 900 is symmetrically upwardly protruded from the front and rear sides, and the reaction gas flows in the left-to-right direction. If the top of the reaction chamber 900 is symmetrically protruded upward from the left and right sides, the flow velocity of the middle portion of the arch is decreased and the flow velocity is high at both sides, and there is a case that the flow velocity difference needs to be compensated for at the middle and both sides.

To further increase the strength of the reaction chamber, ribs may be provided on the top and bottom arches of the reaction chamber 900. The material of the reinforcing rib is the same as that of the reaction cavity shell, and the reinforcing rib is fixed in a welding mode. The ribs may be parallel or orthogonal to the centre line of the arch.

FIG. 10A shows a schematic perspective view of a reaction chamber with an arch and ribs according to one embodiment of the invention. As shown in FIG. 10A, the reaction chamber 1000 is disposed horizontally and has four sides, i.e., front, rear, left, and right sides. The top arc of the reaction chamber 1000 is symmetrically and upwardly protruded from the left side and the right side, the arc surface is highest at the center line of the left side and the right side and is the symmetric center line of the arc surface, and the top reinforcing ribs 1010 are perpendicular to the symmetric center line of the arc surface at the top. The bottom arc of the reaction chamber 1000 is symmetrically and downwardly protruded from the front side and the rear side, the arc surface at the center line of the front side and the rear side is the lowest and is the symmetric center line of the arc surface, and the bottom reinforcing ribs 1020 are perpendicular to the symmetric center line of the arc surface at the bottom.

FIG. 10B shows a schematic perspective view of a reaction chamber with arches and ribs according to one embodiment of the present invention. As shown in FIG. 10B, the reaction chamber 1000 is disposed in a horizontal direction and has four sides, i.e., front, rear, left, and right sides. The top arc of the reaction chamber 1000 is symmetrically raised upwards from the left and right sides, the arc surface is highest at the center line of the left and right sides and is the symmetric center line of the arc surface, and the top reinforcing ribs 1010 are parallel to the symmetric center line of the arc surface at the top. The bottom arc of the reaction chamber 1000 is symmetrically and downwardly protruded from the front side and the rear side, the arc surface at the center line of the front side and the rear side is the lowest and is the symmetric center line of the arc surface, and the bottom reinforcing ribs 1020 are parallel to the symmetric center line of the arc surface at the bottom.

FIG. 10C shows a schematic perspective view of a reaction chamber with arches and ribs according to one embodiment of the present invention. As shown in fig. 10C, the reaction chamber 1000 is disposed horizontally and has four sides, i.e., front, rear, left, and right. The top arc of the reaction chamber 1000 is symmetrically raised upwards from the left and right sides, the arc surface is highest at the center line of the left and right sides and is the symmetric center line of the arc surface, and the top reinforcing ribs 1010 are parallel to the symmetric center line of the arc surface at the top. The bottom arc of the reaction chamber 1000 is symmetrically and downwardly protruded from the left and right sides, the arc surface is the lowest at the center line of the left and right sides and is the symmetric center line of the arc surface, and the bottom reinforcing ribs 1020 are parallel to the symmetric center line of the arc surface at the bottom.

FIG. 10D shows a schematic perspective view of a reaction chamber with arches and ribs according to one embodiment of the present invention. As shown in fig. 10D, the reaction chamber 1000 is disposed horizontally and has four sides, i.e., front, rear, left, and right. The top arc of the reaction chamber 1000 is symmetrically and upwardly protruded from the front and rear sides, the arc surface is highest at the center line of the front and rear sides and is the center line of the arc surface, and the top reinforcing ribs 1010 are parallel to the symmetrical center line of the arc surface at the top. The bottom arc of the reaction chamber 1000 is symmetrically and downwardly protruded from the front side and the rear side, the arc surface at the center line of the front side and the rear side is the lowest and is the symmetric center line of the arc surface, and the bottom reinforcing ribs 1020 are parallel to the symmetric center line of the arc surface at the bottom.

Too large a reinforcement bar makes the device thicker and larger in size while still being fragile. Simultaneously the strengthening rib can shelter from infrared radiation for the strengthening rib is overheated.

By performing stress and strain analysis in the presence of vacuum in the reaction chamber without the dome shape, the reaction chamber with the dome shape at the top and/or bottom, the reaction chamber with the dome shape and the ribs at the top and/or bottom, and one atmosphere outside the chamber, it was found that the stress and strain in the reaction chamber with the dome shape at the top and/or bottom was significantly reduced, but the dome shape resulted in a larger chamber volume with greater mass and memory effect. The combination of the arch and the ribs allows the volume in the cavity to be not increased too much but still be strong enough. Meanwhile, the whole volume containing the reinforcing ribs is not increased much.

Preliminary simulations show that: the parallel of the reinforcing ribs and the arched cross section (i.e. the cross section is arched) has better supporting deformation effect than the orthogonal of the reinforcing ribs and the arched cross section.

In summary, the reaction chamber disclosed by the embodiment of the invention has the advantages of smaller inner capacity, smaller outer volume of the chamber, smaller thermal capacity of quartz, smaller surface area in the chamber, smaller memory effect, and no great influence on infrared radiation (more quartz and the thermodynamic of the reaction chamber are influenced by the orthogonal shielding of the reinforcing ribs and the lamp tubes on the infrared radiation), thereby having better comprehensive performance.

In the embodiment shown in fig. 10D, the stiffeners and arches are placed on the short sides so that the stresses are minimized and the raw material used is minimized.

When the reaction chamber disclosed by the application is used for processing, the vertical sealing surfaces on two sides of the reaction chamber are compressed to realize sealing. Open from above or below, separating the upper half from the lower half. The base is put in from the opening. The rotary lifting mechanism of the base is accessed from below. Thermocouples or the like of the susceptor are connected from the rear, the front or the lower side. And a sealing ring is arranged on the sealing surface, and the upper half part is pressed on the sealing surface of the lower half part through pressure to realize sealing. The substrate is placed by a robot or other means. Reaction gas is horizontally introduced, and plasma is heated or excited. Thereby enabling the chemical vapor deposition film growth process to begin.

During the processing of the wafer in the reaction chamber, the wafer is usually rotated by the rotation of the susceptor in order to obtain a uniform structure on the wafer surface due to the gas flow and the temperature difference between different regions. FIG. 11 shows the temperature contours of a single wafer with the susceptor not rotated and rotated at 30 rpm. As shown in fig. 11, the lower arrows indicate the flow direction of the reaction gas introduced horizontally. The susceptor rotates to deflect the cold airflow to one side. In one embodiment of the present invention, a dual pedestal design is provided to compensate for the cold region of the airflow and improve uniformity.

The susceptor outside the wafer and the susceptor enclosure are temperature extension portions that are close to the temperature of the wafer to reduce the temperature gradient at the edge of the wafer. Which is beneficial to the uniformity of the wafer temperature. Thus, the larger susceptor and susceptor outer casing facilitate uniformity of wafer temperature.

The twin susceptor allows the extension of the twin susceptor near each other to be near infinity (i.e., adjacent susceptors are susceptor extensions of each other), thus contributing to improved temperature uniformity.

Meanwhile, the double bases rotate oppositely, so that the reaction gas low-temperature area of the base on the left side moves to the right side, namely to one side close to the other base. Compared with a similar single-base reaction cavity, the heat escaping from the side edge of the low-temperature side of the original single-base reaction cavity further heats the reaction gas in the low-temperature area on the adjacent base in the double-base design, so that the mutual compensation of the low-temperature areas is realized, the temperature uniformity of the reaction gas is improved, and the uniformity of the formed film is improved.

In addition, the linear heater (lamp) has a high temperature in the middle and two low sides, and the high temperature part of the linear heater (lamp) just corresponds to the low temperature area of the double-base contra-rotating reaction cavity, so that the temperature uniformity of the reaction gas in the reaction cavity is compensated and improved, and the thickness uniformity of the formed film is improved.

The invention further designs an infrared heating lamp for temperature compensation in a low-temperature region. The method comprises the following steps that 1, the power of the linear infrared lamp in a low-temperature region is encrypted (the power is increased by increasing the filament resistance in the middle of the same linear lamp tube). Furthermore, the low-temperature area is locally heated by an infrared heat source (a ball) at a design point of the low-temperature area, and the temperature of the reaction gas in the low-temperature area is further compensated.

Most of the reaction gases for chemical vapor deposition are difficult to be heated directly by infrared rays, but exchange heat with a high-temperature silicon wafer and a base, and the heat exchange (heating) capacity of the gases is limited by the temperature and the area of a certain base. The temperature compensation of the reaction gas in the low-temperature region requires the temperature of the pedestal to be increased (according to the heat exchange rule, the increase of the heat exchange capacity depends on the temperature rise of the relevant heat exchange area of the low-temperature region), and because the temperature of the pedestal has various other physical limitations, the temperature cannot be increased well due to the fact that the power is simply increased. Therefore, the heat exchange area is increased to be more reasonable selection. The invention increases the heat exchange area by adding the erected fins or bulges between the two bases. Meanwhile, the fins can rectify reaction gas, and reduce eddy current (which is not beneficial to growth of chemical vapor deposition epitaxy) caused by meeting of airflow towards the inside and head due to contrarotation of the double bases.

The operating temperature of the quartz needs to be below 700 to 800 degrees celsius.

The reaction chamber is divided into an upper chamber and a lower chamber by the susceptor. The wafer to be processed is placed on the base and is positioned in the upper cavity, and the reaction gas flows through the upper cavity to form a deposition layer on the surface of the wafer. Meanwhile, it is undesirable that the reaction gas flows into the lower chamber to cause deposition. The lower chamber is typically filled with H2 as a displacement or shielding gas. The double bases disclosed by the embodiment of the invention can be contacted with each other after expansion to realize sealing, and can protect the lower cavity and the TC thermocouple.

FIG. 12A shows a schematic view of a chemical vapor deposition system according to one embodiment of the invention. As shown in fig. 12A, the chemical vapor deposition system includes a reaction chamber 1210, a process controller 1220, a human interface 1230, a power source 1240, a rotary lift mechanism 1250, a gas source 1260, and a robot 1270.

Reaction chamber 1210 may employ the reaction chambers described in the above embodiments or combinations thereof. Two susceptors are placed in the reaction chamber.

FIG. 12B shows a schematic view of a chemical vapor deposition system according to one embodiment of the invention. The system of FIG. 12B is similar to the system of FIG. 12A, except that multiple reaction chambers 1210 are integrated, controlled by a process controller 1220, and displayed and operated on a human-machine interface 1230.

FIG. 13 shows a schematic cross-sectional view and a top view of two susceptors placed within a reaction chamber according to one embodiment of the present invention. As shown in fig. 13, two bases 1302 are disposed in a reaction chamber 1301, a wafer 1303 is disposed on the bases 1302, and the bases 1302 are connected to a rotating rod 1307, and are rotated and lifted by the rotating rod. The non-rotating portion of the base 1302 is an outer casing that acts as a continuation of the reduced temperature gradient. The enclosure is divided into an upper base 1306 and a lower base 1305, and a temperature control device 1304 is disposed in the space formed by the upper base 1306 and the lower base 1305 and is contained therein to protect it from the process and corrosive gases.

As can be seen from the top view shown in fig. 13, the two bases are adjacent. To minimize the entry of upper reactant gases into the lower chamber, the two susceptors should be as close to each other as possible so that the gap 1308 between the two is minimized. In the working process, airflow enters from the front of the two bases, the left base rotates clockwise, and the right base rotates anticlockwise. That is, at the airflow inlet, the rotating portions of the two bases rotate toward each other, and the moving direction of the bases at the closest position of the rotating portions of the two bases is the same as the airflow direction. FIG. 14 shows a partial schematic view of two base abutments according to one embodiment of the present invention. Since the reaction chamber operates at a high temperature, a gap 1308 between the two bases needs to be set to a size in consideration of thermal expansion and the like, so as to prevent the two bases from being pressed against each other to cause damage under the thermal expansion condition.

FIG. 15 shows a partial schematic view of two base abutments according to another embodiment of the present invention. As shown in fig. 15, the adjacent surfaces of the first and

second susceptors

1510 and 1520 are slopes, that is, the adjacent surfaces of the first and

second susceptors

1510 and 1520 are not perpendicular to the top surface, and at normal temperature, the slopes are parallel to each other and have a certain gap 1530, and at high temperature, the gap becomes small due to the effect of thermal expansion, and even the slopes contact each other; when the temperature is further increased and the base is further expanded, the two inclined surfaces can slide each other, so that the two bases are prevented from being pressed against each other to damage under the condition of thermal expansion.

FIG. 16 shows a partial schematic view of two base abutments according to yet another embodiment of the present invention. As shown in fig. 16, the edge 1611 of the first base 1610 has a step downward from an upper surface, i.e., the upper surface of the edge 1611 of the first base 1610 has a height lower than that of the upper surface of the body portion 1612. The rim 1621 of the second base 1620 has a step upward from the lower surface, that is, the height of the lower surface of the rim 1621 of the second base 1620 is higher than the height of the lower surface of the body portion 1622. In other words, the thickness of the edge 1611 of the first base 1610 and the edge 1621 of the second base 1620 is thinner than the thickness of the respective main body portions. The edge 1611 of the first base 1610 and the edge 1621 of the second base 1620 only partially overlap such that an outermost side of the edge 1621 of the first base 1610 has a first gap 1613 with the body portion 1622 of the second base 1620 and an outermost side of the edge 1621 of the second base 1620 has a second gap 1623 with the body portion 1612 of the first base 1610. At normal temperature, the edge 1621 of the second base 1620 is partially stacked on the edge 1611 of the first base 1610, the first gap 1613 and the second gap 1623 are set values, and at high temperature, due to thermal expansion, the first base and the second base approach each other, the

edges

1611 and 1621 slide, and the first gap 1613 and the second gap 1623 become small, so that damage caused by the two bases being pressed against each other under thermal expansion is avoided.

To increase the temperature of the incoming gas, one or more vertical foil fins may be added between the two pedestals. Figure 17A shows a top view of the addition of fins at the front of the base according to one embodiment of the present invention. Figure 17B illustrates a cross-sectional view of the addition of fins at the front end of the base according to one embodiment of the present invention. Figure 17C illustrates a bottom view of the addition of fins to the front end of the base according to one embodiment of the present invention. The fin 1710 is added at the middle position of the front end of the susceptor which is firstly contacted with the reaction gas, the heat conduction area to the gas flow is increased so as to compensate the temperature difference caused by the gas flow driven by the self-rotation of the opposite substrate at the middle part, and the fin is also used for isolating the vortex possibly caused by the opposite gas flow caused by the opposite rotation.

In other embodiments of the invention, the fins can be lifted, and the fins are lowered when the chemical vapor deposition is not carried out; during deposition and cleaning, the fins are raised.

Figure 18 illustrates a schematic view of the assembly of a fin with a base, according to one embodiment of the present invention. As shown in fig. 18, the bottom of fin 1810 includes a base 1811 perpendicular to fin 1810, base 1811 overlapping

bases

1820 and 1830 on either side. The bottom plate 1811 has lower fins 1814 thereunder. The lower fins 1814 pass through the gap between the

bases

1820 and 1830. The thickness of the lower fins 1814 is less than the width of the gap between the

pedestals

1820 and 1830; the bottom plate 1811 has a width greater than that of the gap between the

bases

1820 and 1830 so that when the lower fins 1814 are inserted into the gap, the bottom plate 1811 contacts the edges of the

bases

1820 and 1830, respectively, and the support fins 1810 are above the bases. Slots may also be provided at the edges of the

bases

1820 and 1830 to accommodate the bottom plate 1811, the slots having a width greater than the bottom plate 1811, with

gaps

1812 and 1813 between the bottom plate 1811 and the slots after the bottom plate 1811 is installed in the slots.

Figure 19 illustrates a schematic view of a fin and base assembly according to another embodiment of the present invention. As shown in fig. 19, the bottom of fin 1910 is tapered and inserted into the gap between base 1920 and base 1930, and the edges of base 1920 and base 1930 that contact fin 1910 have tapered mating slopes. That is, the bottom of fin 1910 includes two

ramps

1911 and 1912, the edge of base 1920 is ramp 1921, and the edge of base 1930 is ramp 1931. Base 1920 and base 1930 have a gap therebetween. When fin 1910 is inserted into the gap between base 1920 and base 1930, angled surface 1911 is parallel to and in contact with angled surface 1921 and angled surface 1912 is parallel to and in contact with angled surface 1931, thereby supporting fin 1910 above the base.

FIG. 20 illustrates a top, cross-sectional, front, and bottom view of a base with a minimized center-to-center spacing of the base according to one embodiment of the present invention. A certain gap is required between the two bases in consideration of thermal expansion. Furthermore, the placement of the thermocouples under the two pedestals also requires a space. In this case, in order to minimize the center-to-center distance of the pedestals, it is necessary to consider the arrangement of the connection structure of the adjacent pedestals and the control means such as the thermocouple. Fig. 21 shows a partially enlarged view of the connection portion of the base where the center-to-center distance of the base is minimized. As shown in FIG. 21, the edge of the left base 2110 protrudes outward, the edge of the right base 2120 has a groove corresponding to the left protrusion, and the thermocouple 2130 is disposed below the groove. The edge portion of the left base 2110 is layered in the groove of the right base, and the outermost side of the left base 2110 has a certain gap 2140 with the main portion of the right base.

FIG. 22 illustrates a top, cross-sectional, front, and bottom view of bases connected in diagonal lines of adjacent bases, according to one embodiment of the invention. In this embodiment, the structure shown in fig. 14 to 16 may be adopted where two bases are abutted. The top surface profiles of the two bases are right trapezoid, the two bases are adjacent at the bevel edge of the right trapezoid, and the two bases slide through the bevel edge to realize opposite impact thermal expansion.

In the above embodiment, the reaction chamber is a hollow cuboid, the sealing ring of the upper cover is located in the peripheral low-temperature region, and the concentric high-temperature quartz has a temperature gradient. Following some embodiments of the present invention, providing at least a portion of the sides of the upper cover portion and/or the plane of the reaction chamber housing as an oval or even circular structure helps to absorb the stresses caused by temperature gradients.

Fig. 23 illustrates a top view, a cross-sectional view, and a perspective view of a reaction chamber 2300, according to one embodiment of the invention. As shown in FIG. 23, the front and rear

parallel edges

2311 and 2312 of the upper cover 2310 of the reaction chamber 2300 are protruded outward to form an arc shape. The sealing ring 2320 is provided along the outer edge of the upper cover 2310, thus having a corresponding arc shape. The main housing 2330 of the reaction chamber 2300 is still a hollow rectangular parallelepiped, and the open edge of the hollow housing expands outward of the housing to form a sealing surface that matches the edge of the upper cover 2310.

FIG. 24 shows a top view, a cross-sectional view and a perspective view of a variation of the reaction chamber shown in FIG. 23. The reaction chamber shown in fig. 24 differs from the reaction chamber shown in fig. 23 in that: the cross-sectional shape of the housing on the gas inlet side is different. To avoid the reaction gas entering the lower chamber, the gas inlet side of the chamber shown in FIG. 23 has a bottom that is flush with the top of the susceptor and a vertical sidewall adjacent the susceptor in the inlet region, so that the bottom of the chamber is stepped down to form the lower chamber below the susceptor. In FIG. 24, the cross section of the inlet side of the reaction chamber is identical to that of the rear side, and in order to prevent the reaction gas from entering the lower chamber, a stopper or L-shaped baffle 2410 is added to the section from the inlet to the susceptor.

In the above-described other embodiments and the embodiments described later of the present invention, the inlet of the reaction chamber may be arbitrarily selected from the structure shown in fig. 23 or the structure shown in fig. 24.

FIG. 25 shows a top view, a cross-sectional view and a perspective view of another variation of the reaction chamber shown in FIG. 23. The reaction chamber shown in FIG. 25 differs from the reaction chamber shown in FIG. 23 in that: in fig. 25, the side wall of the housing is formed into a curved surface along with the side surface of the upper cover.

FIG. 26 shows a top view, a cross-sectional view and a perspective view of a variation of the reaction chamber shown in FIG. 25. The reaction chamber shown in FIG. 26 differs from the reaction chamber shown in FIG. 25 in that: all the sides of the upper cover 2610 are composed of smooth curves.

Fig. 27A to 27D are schematic views showing the layout of heaters on a reaction chamber according to an embodiment of the present invention. As shown in fig. 27A, the heaters 2710 are uniformly distributed on the top of the upper cover. The heater 2710 may be a lamp, coil, or similar structure. As shown in fig. 27B, the heater 2710 is denser in the central portion of the top cover. As shown in fig. 27C, a U-shaped heater 2711 is additionally added to the top cover above the gas inlet. As shown in fig. 27D, additional point light sources 2712 are added to the top cover above the gas inlet. In the above or other embodiments of the invention, the power distribution of the wire heater 2710 may be uniform or non-uniform, and the temperature of a certain section of the wire heater 2710 may be significantly higher than the temperature of other sections.

For the temperature control strategy within the reaction chamber, in the embodiment of the present invention, a single inside TC thermocouple was used, and only one susceptor temperature could be obtained since there were two susceptors. In another embodiment of the present invention, two TC thermocouples are used to control the left and right susceptors, respectively, and the temperature difference is judged. With the twin bases in close proximity, the twin TCs are slightly set back. In the case where the connecting lines between the adjacent bases are oblique lines as shown in fig. 22, two temperature measuring points of the front and rear double junctions or two TC thermocouples are used. Fig. 28 shows a schematic diagram of a thermocouple layout in which the connecting lines of adjacent pedestals are diagonal. As shown in FIG. 28, a first thermocouple TC1 measures the temperature at the front of the left base, and a second thermocouple TC2 measures the temperature at the back of the right base.

With respect to the installation manner of the thermocouple TC, in the above embodiment, the outer case of the susceptor is divided into the upper susceptor and the lower susceptor, and the upper susceptor and the lower susceptor are used to form the sealed space for placing the thermocouple. In other embodiments of the present invention, other outer box structures may be used to seal the thermocouple. FIG. 29A shows a top view of a base sleeve according to one embodiment of the invention. FIG. 29B illustrates a back view of a base sleeve according to one embodiment of the invention. Figure 29C illustrates a bottom view of a base sleeve according to one embodiment of the present invention.

As shown in fig. 29B and 29C, the back of the base has a protrusion 2910 that is recessed into the groove 2911 to accommodate at least 2 TC thermocouples. The TC is inserted into the well and then one or more plugs 2920 are plugged into the well to protect the TC thermocouple. A quartz protective sleeve may be provided outside the TC thermocouple. The plugs 2920 may be graphite plugs. The side of the plug 2920 facing away from the TC thermocouple has three or more concave points (grooves) that engage with the convex points (blocks) of the quartz support and fall as a support structure on a quartz support at least three points, the plug supporting the base enclosure and TC. Figure 29D shows a partial cross-sectional view of the recess and plug 2920. One or more plugs plug the slot to protect the TC thermocouple. And a quartz protective sleeve is arranged outside the TC thermocouple. In the embodiment shown in fig. 29A to 29D, the protrusion 2910 on the back of the susceptor and the recess inside it are arranged along the inner circular edge of the susceptor and lead out the lead wires of the TC thermocouple so that the TC thermocouple can be as close as possible to the wafer on the spin susceptor.

Fig. 30A shows a schematic perspective view of a stopper according to an embodiment of the invention. Fig. 30B illustrates a top view and a front view of a plug according to an embodiment of the invention. Fig. 30C illustrates a bottom view of a plug according to an embodiment of the invention. The plug may be a graphite plug.

The plug 3000 has a T-shaped cross-section, with the top portion 3010 of the plug inserted into the channel being smaller in cross-section than the bottom portion 3020 remaining outside the channel. The overall shape of the plug 3000 matches the shape of the recess in the outer box. As shown in fig. 30A and 30B, the top of the plug 3000 conforms to the recess in the back of the base, with the bottom of the plug covering the top of the recess.

As shown in fig. 30C, the side of the plug facing away from TC has three or more concave points or grooves 3030 to engage with the convex points or protrusions of the quartz support, and to act as a support structure for the plug resting on a quartz support at least three points, the plug supporting the base housing and TC. The plug and the graphite base may be in a non-tight fit.

FIG. 31A shows a top view of a dual base, according to one embodiment of the invention. FIG. 31B shows a perspective view of a dual base, according to one embodiment of the present invention. As shown in fig. 31A and 31B, the rotatable susceptor of each susceptor has three wafer zones thereon. The base shown in fig. 31A and 31B can be applied to the above-described embodiments of the present invention.

It will be appreciated by those skilled in the art that in other embodiments of the invention, the shape of the plug and recess is not limited to that shown in the above embodiments. Those skilled in the art can set the position and size of the protrusion on the back of the base and the internal groove thereof according to the actual process requirements, for example, the protrusion is a broken line rather than an arc, and it is within the scope of the present invention as long as the TC thermocouple can be set at a specific position and lead out of the lead thereof.

While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

Claims

1. A chemical vapor deposition system comprising:

the reaction chamber comprises a hollow shell, the shell is horizontally arranged, an air inlet, an air outlet and/or an operation opening are formed in two sides of the hollow shell, and air enters the reaction chamber from the air inlet along the horizontal direction;

heating devices are arranged above and below the reaction cavity;

2. The chemical vapor deposition system of claim 1, wherein the first rotatable susceptor and the second rotatable susceptor are connected to a rotating shaft, and are rotated and lifted by the rotating shaft, and the thermocouple is disposed under the first cassette and/or the second cassette.

3. The chemical vapor deposition system of claim 1, wherein adjacent surfaces of the first susceptor and the second susceptor are parallel to each other and non-perpendicular to a top surface.

4. The chemical vapor deposition system of claim 1, wherein an edge of the first susceptor has a first step facing downward from an upper surface, an edge of the second susceptor has a second step facing upward from a lower surface, the edge of the first susceptor and the edge of the second susceptor partially overlap such that the edge of the second susceptor partially overlaps a horizontal portion of the first step, and an outermost side of the edge of the first susceptor has a second gap from a vertical surface of the second step, and an outermost side of the edge of the second susceptor has a third gap from a vertical surface of the first step.

5. The chemical vapor deposition system of claim 1, wherein the top surfaces of the first susceptor and the second susceptor are contoured in a right trapezoid, the first susceptor and the second susceptor being adjacent at a hypotenuse of the right trapezoid.

6. The chemical vapor deposition system of claim 1, further comprising one or more fins disposed between the first pedestal and the second pedestal proximate the gas inlet and protruding upward.

7. The chemical vapor deposition system of claim 6, wherein the bottom of the fin includes a bottom plate perpendicular to the protruding portion of the fin and a lower fin below the bottom plate, the bottom plate overlapping the first pedestal and the second pedestal on both sides, the lower fin passing through a gap between the first pedestal and the second pedestal, the lower fin having a thickness smaller than a width of the gap between the first pedestal and the second pedestal; the bottom plate has a width greater than a width of a gap between the first base and the second base, so that when the lower fin is inserted into the gap, both sides of the bottom plate are respectively in contact with edges of the first base and the second base, and the support fin is positioned above the first base and the second base.

8. The chemical vapor deposition system of claim 6, wherein the fin has a tapered bottom that is inserted into a gap between the first pedestal and the second pedestal, and wherein edges of the first pedestal and the second pedestal that contact the fin have a slope that matches the taper.

9. The chemical vapor deposition system of claim 1, wherein a bottom of the hollow enclosure is flush with a top of the susceptor in a region from the gas inlet to the susceptor, the enclosure having a vertical downward sidewall near the susceptor such that the bottom of the enclosure is stepped down to form a lower cavity below the susceptor.

10. The chemical vapor deposition system of claim 1, further comprising: and the stop block or the L-shaped baffle is arranged in the area from the air inlet to the base of the hollow shell, and the top surface of the stop block or the L-shaped baffle is flush with the top of the base.

11. The chemical vapor deposition system of claim 1, wherein the top or bottom of the hollow enclosure has an opening, and further comprising a lid covering the opening, wherein an edge of the lid overlaps an edge of the opening of the hollow enclosure, the overlapping portion being a sealing surface, and wherein a sealing ring is disposed between the sealing surfaces to effect the seal.