CN112803757A - Charge pump boost IC and electronic device - Google Patents
Charge pump boost IC and electronic device Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
本申请公开了一种电荷泵升压IC和电子设备，电荷泵升压IC包括：第一开关、第二开关、第三开关、第四开关、第六开关、第七开关、处理单元以及第一电容，其中：第七开关、第一开关、第二开关、第三开关以及第四开关依次串联在电荷泵升压IC的二次升压的电压输出端与第一接地端之间；第六开关的第一端连接在第二开关和第三开关之间，第六开关的第二端作为电荷泵升压IC的一次升压的电压输出端；第一电容的第一端连接在第一开关与第二开关之间，第一电容的第二端连接在第三开关与第四开关之间；第一开关、第二开关、第三开关、第四开关、第六开关、第七开关与处理单元连接。本电荷泵升压IC可解决在实现2次升压时升压成本高以及占板面积大的问题。
The present application discloses a charge pump boost IC and an electronic device. The charge pump boost IC includes: a first switch, a second switch, a third switch, a fourth switch, a sixth switch, a seventh switch, a processing unit, and a first switch. a capacitor, wherein: the seventh switch, the first switch, the second switch, the third switch and the fourth switch are connected in series between the voltage output terminal of the secondary boost of the charge pump boost IC and the first ground terminal in sequence; The first end of the six switches is connected between the second switch and the third switch, and the second end of the sixth switch is used as the voltage output end of the first boost of the charge pump boost IC; the first end of the first capacitor is connected to the Between a switch and the second switch, the second end of the first capacitor is connected between the third switch and the fourth switch; the first switch, the second switch, the third switch, the fourth switch, the sixth switch, the seventh switch The switch is connected to the processing unit. The charge pump boost IC can solve the problems of high boost cost and large board area when boosting twice.
Description
Technical Field
The present application relates to the field of integrated circuit technology, and in particular, to a charge pump boost IC and an electronic device.
Background
With the development of science and technology, terminal devices such as mobile phones and the like are widely used. At present, a charge pump boost IC is used in a terminal device such as a mobile phone to realize conversion of dc-dc voltage.
When a charge pump boost IC is used to achieve the conversion of the dc-dc voltage, boosting can generally be achieved only once, i.e. the dc voltage is raised by a factor of 2 of the input voltage. For example, converting a 4V dc voltage to an 8V dc voltage may be accomplished using a charge pump boost IC.
If 2 boosting is required, i.e. the dc voltage is raised to 4 times the input voltage, e.g. 4V dc voltage is converted to 16V dc voltage, two charge pump boost ICs are required to boost in sequence. Specifically, the method comprises the following steps: the charge pump boost IC a is required to convert the 4V dc voltage into 8V dc voltage, and the charge pump boost IC B is required to convert the 8V dc voltage converted by the charge pump boost IC a into 16V dc voltage.
Because two charge pump boost ICs are needed when 2-time boosting is realized, the conventional boosting has high cost and large occupied area.
Disclosure of Invention
The application aims at providing a charge pump step-up IC and electronic equipment, has solved at least and has boosted with high costs and account for the big problem of face area when realizing 2 times and stepping up.
In order to solve the technical problem, the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a charge pump boost IC, including: first switch, second switch, third switch, fourth switch, sixth switch, seventh switch, processing unit and first electric capacity, wherein:
the seventh switch, the first switch, the second switch, the third switch and the fourth switch are sequentially connected in series between a secondary boosted voltage output end of the charge pump boosting IC and the first ground end;
a first end of the sixth switch is connected between the second switch and the third switch, and a second end of the sixth switch is used as a primary boosted voltage output end of the charge pump boosting IC;
a first end of the first capacitor is connected between the first switch and the second switch, and a second end of the first capacitor is connected between the third switch and the fourth switch;
the control end of the first switch, the control end of the second switch, the control end of the third switch, the control end of the fourth switch, the control end of the sixth switch and the control end of the seventh switch are connected with the processing unit.
In a second aspect, embodiments of the present application provide an electronic device including a charge pump boost IC as described in the first aspect.
The application provides a charge pump step-up IC, includes: first switch, second switch, third switch, fourth switch, sixth switch, seventh switch, processing unit and first electric capacity, wherein: the seventh switch, the first switch, the second switch, the third switch and the fourth switch are sequentially connected in series between the secondary boosted voltage output end of the charge pump boosting IC and the first grounding end; the first end of the sixth switch is connected between the second switch and the third switch, and the second end of the sixth switch is used as a primary boosted voltage output end of the charge pump boosting IC; the first end of the first capacitor is connected between the first switch and the second switch, and the second end of the first capacitor is connected between the third switch and the fourth switch; the control end of the first switch, the control end of the second switch, the control end of the third switch, the control end of the fourth switch, the control end of the sixth switch and the control end of the seventh switch are connected with the processing unit. In the application, a voltage output end of the charge pump boosting IC for primary boosting is used as a voltage output end of secondary boosting, and the processing unit controls on-off states of the first switch, the second switch, the third switch, the fourth switch, the sixth switch and the seventh switch to realize secondary boosting so as to increase direct-current voltage output by the voltage output end of the charge pump boosting IC for primary boosting to one time. Thus, 2-time boosting can be realized by integrating elements such as switches on the conventional charge pump boosting IC. That is, only one charge pump boost IC is needed to realize 2 times of boosting, which reduces the boosting cost and the board occupation area.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
Fig. 1 is a schematic structural diagram of a charge pump boost IC according to an embodiment of the present disclosure;
fig. 2a is an equivalent circuit schematic diagram of a charge pump boost IC according to an embodiment of the present disclosure;
FIG. 2b is a schematic diagram of an equivalent circuit of another charge pump boost IC according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of another charge pump boost IC according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
The charge pump boost IC and the electronic device provided by the embodiments of the present application are described in detail with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
An embodiment of the present application provides a charge pump boost IC, as shown in fig. 1, including: a first switch 101, a second switch 102, a third switch 103, a fourth switch 104, a sixth switch 106, a seventh switch 107, a processing unit 109, and a first capacitor 110, wherein:
the seventh switch 107, the first switch 101, the second switch 102, the third switch 103 and the fourth switch 104 are sequentially connected in series between the secondary boosted voltage output end of the charge pump boosting IC and the first ground end;
a first end of the sixth switch 106 is connected between the second switch 102 and the third switch 103, and a second end of the sixth switch 106 is used as a voltage output end of the primary boost of the charge pump boost IC;
a first end of the first capacitor 110 is connected between the first switch 101 and the second switch 102, and a second end of the first capacitor 110 is connected between the third switch 103 and the fourth switch 104;
a control terminal of the first switch 101, a control terminal of the second switch 102, a control terminal of the third switch 103, a control terminal of the fourth switch 104, a control terminal of the sixth switch 106, and a control terminal of the seventh switch 107 are connected to the processing unit 109.
In the embodiment of the present application, the voltage output terminal of the charge pump boost IC for boosting once is the voltage output terminal of the conventional charge pump boost IC. In one example, if the conventional charge pump boost IC is a charge pump boost IC that converts a 4V dc voltage into an 8V dc voltage, the dc voltage output by the voltage output terminal of the charge pump boost IC that is boosted once is 8V.
In the embodiment of the application, the voltage output end of the primary boosting of the charge pump boosting IC is used as the voltage input end of the secondary boosting. The processing unit 109 performs secondary boosting by controlling on/off states of the first switch 101, the second switch 102, the third switch 103, the fourth switch 104, the sixth switch 106, and the seventh switch 107, so as to double a dc voltage output from a primary-boosted voltage output terminal of the charge pump boost IC, for example, to increase a voltage of 8V to 16V.
The principle of realizing secondary boosting of the charge pump boosting IC provided by the embodiment of the application is as follows: the processing unit 109 controls the sixth switch 106 and the seventh switch 107 to be turned on; during the first half time t1 of a boosting period, the first switch 101 and the third switch 103 are controlled to be turned off, and the second switch 102 and the fourth switch 104 are controlled to be turned on to charge the first capacitor 110, and the equivalent circuit diagram is shown in fig. 2 a; during the second half time t2 of the boosting period, the first switch 101 and the third switch 103 are controlled to be turned on, and the second switch 102 and the fourth switch 104 are controlled to be turned off, so as to discharge the first capacitor 110, and the equivalent circuit diagram is shown in fig. 2 b.
For fig. 2a, during the time period t1, Vfly is Vin; during a time period t2, Vout ═ Vfly + Vin; since t1 equals t2, Vout equals Vfly + Vin equals 2 Vin.
Wherein Vin is a dc voltage output by the primary boosted voltage output terminal of the charge pump boost IC, Vfly is a voltage across the first capacitor 110, and Vout is a dc voltage output by the secondary boosted voltage output terminal of the charge pump boost IC.
In the embodiment of the present application, the first switch 101, the second switch 102, the third switch 103, the fourth switch 104, the sixth switch 106, and the seventh switch 107 can be implemented by NMOS (N-channel Metal Oxide Semiconductor) transistors. Of course, the switching device can also be implemented by other types of switching devices, such as a PMOS (P-channel Metal Oxide Semiconductor) transistor.
The application provides a charge pump step-up IC, includes: first switch, second switch, third switch, fourth switch, sixth switch, seventh switch, processing unit and first electric capacity, wherein: the seventh switch, the first switch, the second switch, the third switch and the fourth switch are sequentially connected in series between the secondary boosted voltage output end of the charge pump boosting IC and the first grounding end; the first end of the sixth switch is connected between the second switch and the third switch, and the second end of the sixth switch is used as a primary boosted voltage output end of the charge pump boosting IC; the first end of the first capacitor is connected between the first switch and the second switch, and the second end of the first capacitor is connected between the third switch and the fourth switch; the control end of the first switch, the control end of the second switch, the control end of the third switch, the control end of the fourth switch, the control end of the sixth switch and the control end of the seventh switch are connected with the processing unit. In the application, a voltage output end of the charge pump boosting IC for primary boosting is used as a voltage output end of secondary boosting, and the processing unit controls on-off states of the first switch, the second switch, the third switch, the fourth switch, the sixth switch and the seventh switch to realize secondary boosting so as to increase direct-current voltage output by the voltage output end of the charge pump boosting IC for primary boosting to one time. Thus, 2-time boosting can be realized by integrating elements such as switches on the conventional charge pump boosting IC. That is, only one charge pump boost IC is needed to realize 2 times of boosting, which reduces the boosting cost and the board occupation area.
On the basis of any of the above embodiments, as shown in fig. 3, the charge pump boost IC provided in the embodiments of the present application further includes a fifth switch 105 and an eighth switch 108, where:
a first end of the fifth switch 105 is connected between the first switch 101 and the seventh switch 107, and a second end of the fifth switch 105 is connected with a voltage output end of the first-stage boosting of the charge pump boosting IC;
a first terminal of the eighth switch 108 serves as a voltage input terminal of the charge pump boost IC, and a second terminal of the eighth switch 108 is connected between the second switch 102 and the third switch 103.
In the embodiment of the present application, the fifth switch 105 and the eighth switch 108 may be implemented by NMOS transistors. Of course, the switching device can also be realized by other forms of switching devices, such as a PMOS tube. In addition, the voltage input terminal of the charge pump boost IC may be a power pin of the USB interface.
In this embodiment of the application, the processing unit 109 may control on/off states of the first switch 101, the second switch 102, the third switch 103, the fourth switch 104, the fifth switch 105, the sixth switch 106, the seventh switch 107, and the eighth switch 108 to implement primary boosting of the charge pump boost IC, that is, a voltage output end that implements primary boosting of the charge pump boost IC outputs 2 times of a dc voltage input by a voltage input end of the charge pump boost IC, specifically:
the processing unit 109 controls the sixth switch 106 and the seventh switch 107 to be turned off, and the fifth switch 105 and the eighth switch 108 to be turned on; during the first half time t3 of one boosting period, the first switch 101 and the third switch 103 are controlled to be turned off, and the second switch 102 and the fourth switch 104 are controlled to be turned on, so as to charge the first capacitor 110; during the second half of the boost period, time t4, the first switch 101 and the third switch 103 are controlled to be on, and the second switch 102 and the fourth switch 104 are controlled to be off, to achieve the discharge of the first capacitor 110.
It should be noted that the circuit principle of the above-mentioned circuit for outputting 2 times of the dc voltage output by the voltage input terminal of the charge pump boost IC when the voltage output terminal of the charge pump boost IC performs primary boosting is similar to that of fig. 2a and 2b, and is not described again here.
In the embodiment of the application, a circuit structure for realizing primary boosting of a charge pump boosting IC is provided. Meanwhile, based on the above, when the charge pump boost IC provided in the embodiment of the present application implements primary boost and secondary boost, the first switch, the second switch, the third switch, the fourth switch, and the processing unit are shared, so that the number of electronic components in the charge pump boost IC is reduced, and the board area of the charge pump boost IC is further reduced. In addition, because the voltage output end of the primary boosting and the voltage output end of the secondary boosting are in a parallel connection relationship, the path impedance of the charge pump boosting IC is reduced, which reduces the path loss and further improves the service life of the charge pump boosting IC. Due to the fact that the service life of the charge pump boosting IC is prolonged, the use experience of a user can be further improved.
On the basis of the above, in an embodiment of the present application, the processing unit 109 controls the fifth switch 105 and the eighth switch 108 to be turned on when determining to boost once;
the sixth switch 106 and the seventh switch 107 are controlled to be turned off;
controlling the second switch 102 and the fourth switch 104 to be turned on and controlling the first switch 101 and the third switch 103 to be turned off in a first period of time;
controlling the first switch 101 and the third switch 103 to be turned on and the second switch 102 and the fourth switch 104 to be turned off in a second period;
wherein the duration of the first time period is equal to the duration of the second time period.
In one embodiment of the present application, the processing unit determines to boost once when receiving an indication of boosting once input by a user.
As can be seen from the above, in an embodiment of the present application, the processing unit 109 controls the fifth switch 105 and the eighth switch 108 to be turned off when determining to boost twice;
the sixth switch 106 and the seventh switch 107 are controlled to be turned on;
controlling the second switch 101 and the fourth switch 104 to be turned on and controlling the first switch 101 and the third switch 103 to be turned off in a third period;
controlling the first switch 101 and the third switch 103 to be turned on and the second switch 102 and the fourth switch 104 to be turned off during a fourth period;
and the duration of the third time period is the same as that of the fourth time period.
In one embodiment of the present application, the processing unit determines to boost twice when receiving an indication to boost twice from a user.
On the basis of any of the above embodiments, two charge pump boost ICs (respectively denoted as charge pump boost IC 1 and charge pump boost IC 2) as shown in fig. 3 may be integrated into the same IC. On the basis, the processing unit controls the charge pump boosting IC 1 to boost once in the first half of a boosting period, and controls the charge pump boosting IC 2 to boost once in the second half of the boosting period, so that the integrated IC can continuously realize boosting once in the whole boosting period. Furthermore, in the first half of a boosting period, the processing unit controls the charge pump boosting IC 2 to boost twice, so that the integrated IC can perform boosting once and boosting twice.
In addition to any of the above embodiments, as shown in fig. 3, the charge pump boost IC further includes a second capacitor 111, a first end of the second capacitor 111 is connected to the second ground terminal, and a second end of the second capacitor 111 is connected between the second switch 102 and the third switch 103.
In the embodiment of the present application, the second capacitor 111 may filter a high-frequency interference signal in the input voltage, so as to achieve a wave stabilizing effect. The input voltage may be a voltage output from a voltage output terminal of the charge pump boost IC shown in fig. 1, or may be a voltage input to a voltage input terminal of the charge pump boost IC shown in fig. 3.
On the basis of any of the above embodiments, as shown in fig. 3, the charge pump boost IC provided in the embodiment of the present application further includes a third capacitor 112, a first end of the third capacitor 112 is connected to a primary boosted voltage output end of the charge pump boost IC, and a second end of the third circuit 112 is connected to a third ground end.
In the embodiment of the present application, the third capacitor 112 may filter a high-frequency interference signal in the voltage output from the voltage output terminal of the charge pump boost IC that is boosted once, so as to achieve a wave stabilizing effect.
On the basis of any of the above embodiments, as shown in fig. 3, the charge pump boost IC provided in the embodiment of the present application further includes a fourth capacitor 113, a first end of the fourth capacitor 113 is connected to the secondary boosted voltage output end of the charge pump boost IC, and a second end of the fourth capacitor 113 is connected to a fourth ground end.
In this embodiment, the fourth capacitor 113 may filter a high-frequency interference signal in the output voltage of the secondary boosted voltage output terminal of the charge pump boost IC, so as to achieve a wave stabilizing effect.
In one example, the first ground terminal, the second ground terminal, the third ground terminal and the fourth ground terminal may be the same ground terminal.
An embodiment of the present application further provides an electronic device, which includes the charge pump boost IC provided in any of the above embodiments.
In one example, the electronic device may be a mobile electronic device or a non-mobile electronic device. By way of example, the mobile electronic device may be a mobile phone, a tablet computer, a notebook computer, a palm top computer, a vehicle-mounted electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook or a Personal Digital Assistant (PDA), and the like, and the non-mobile electronic device may be a server, a Network Attached Storage (NAS), a Personal Computer (PC), a Television (TV), a teller machine or a self-service machine, and the like, and the embodiment of the present application is not particularly limited thereto.
The above embodiments mainly describe the differences between the corresponding embodiments and other embodiments, and each embodiment may be used alone or in combination with each other, which is not limited herein, and the same or similar parts of each embodiment may be referred to each other.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A charge pump boost IC, comprising: first switch, second switch, third switch, fourth switch, sixth switch, seventh switch, processing unit and first electric capacity, wherein:
the seventh switch, the first switch, the second switch, the third switch and the fourth switch are sequentially connected in series between a secondary boosted voltage output end of the charge pump boosting IC and the first ground end;
a first end of the sixth switch is connected between the second switch and the third switch, and a second end of the sixth switch is used as a primary boosted voltage output end of the charge pump boosting IC;
a first end of the first capacitor is connected between the first switch and the second switch, and a second end of the first capacitor is connected between the third switch and the fourth switch;
the control end of the first switch, the control end of the second switch, the control end of the third switch, the control end of the fourth switch, the control end of the sixth switch and the control end of the seventh switch are connected with the processing unit.
2. The charge pump boost IC of claim 1, wherein said charge pump buck IC further comprises: a fifth switch and an eighth switch, wherein:
a first end of the fifth switch is connected between the first switch and the seventh switch, and a second end of the fifth switch is connected with a voltage output end of the primary boosting of the charge pump boosting IC;
a first terminal of the eighth switch serves as a voltage input terminal of the charge pump boost IC, and a second terminal of the eighth switch is connected between the second switch and the third switch.
3. The charge pump boost IC of claim 1, further comprising a second capacitor, a first terminal of said second capacitor being connected to a second ground terminal, a second terminal of said second capacitor being connected between said second switch and said third switch.
4. The charge pump boost IC of claim 1, further comprising a third capacitor, wherein a first terminal of said third capacitor is connected to a primary boosted voltage output terminal of said charge pump boost IC, and a second terminal of said third circuit is connected to a third ground terminal.
5. The charge pump boost IC of claim 1, further comprising a fourth capacitor, wherein a first terminal of said fourth capacitor is connected to a secondary boosted voltage output terminal of said charge pump boost IC, and a second terminal of said fourth capacitor is connected to a fourth ground terminal.
6. The charge pump boost IC of claim 2, wherein said processing unit controls said sixth switch and said seventh switch to be turned off if it is determined that boosting is performed once;
controlling the fifth switch and the eighth switch to be conducted;
controlling the second switch and the fourth switch to be switched on and controlling the first switch and the third switch to be switched off in a first time period;
controlling the first switch and the third switch to be turned on and the second switch and the fourth switch to be turned off in a second time period;
wherein the duration of the first time period is the same as the duration of the second time period.
7. The charge pump boost IC of claim 2, wherein said processing unit controls said fifth switch and said eighth switch to be turned off if it is determined to boost twice;
controlling the sixth switch and the seventh switch to be conducted;
controlling the second switch and the fourth switch to be switched on and controlling the first switch and the third switch to be switched off in a third time period;
controlling the first switch and the third switch to be turned on and controlling the second switch and the fourth switch to be turned off in a fourth time period;
wherein the duration of the third time period is the same as the duration of the fourth time period.
8. An electronic device, characterized in that the electronic device comprises a charge pump boost IC according to any of claims 1-7.
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| CN202110123726.4A CN112803757B (en) | 2021-01-28 | 2021-01-28 | Charge Pump Boost ICs and Electronics |
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| CN202110123726.4A CN112803757B (en) | 2021-01-28 | 2021-01-28 | Charge Pump Boost ICs and Electronics |
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| WO2024174958A1 (en) * | 2023-02-24 | 2024-08-29 | 维沃移动通信有限公司 | Charge pump circuit and electronic device |
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| WO2024174958A1 (en) * | 2023-02-24 | 2024-08-29 | 维沃移动通信有限公司 | Charge pump circuit and electronic device |
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| CN112803757B (en) | 2022-05-03 |
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