CN112799278A - Mask, preparation method thereof and display panel - Google Patents
Mask, preparation method thereof and display panel Download PDFInfo
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- CN112799278A CN112799278A CN202110035362.4A CN202110035362A CN112799278A CN 112799278 A CN112799278 A CN 112799278A CN 202110035362 A CN202110035362 A CN 202110035362A CN 112799278 A CN112799278 A CN 112799278A
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- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000005855 radiation Effects 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims description 50
- 230000005540 biological transmission Effects 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052729 chemical element Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 42
- 239000011651 chromium Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 239000011343 solid material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Abstract
The invention provides a mask, which comprises: a substrate; a light shielding region formed on the substrate to shield a predetermined wavelength band of radiation light; a fully transmissive region formed on the substrate to fully transmit the irradiated light; and more than two semi-transmission areas formed on the substrate to transmit part of the radiation light; according to the invention, according to the principle that the semi-transmission material has selective absorption on radiation light with different wavelengths, the absorption of the semi-transmission material on the radiation light is controlled by adjusting the forbidden band width of the semi-transmission material, a single mask can form the pattern effect of multiple film layers, and the manufacturing cost of the display panel is saved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a mask, a preparation method thereof and a display panel.
Background
In the prior art, a TFT (thin film transistor) and a CF (color filter) in a display panel are deposited/coated with a plurality of films, an exposure (photo) process is a key technology in a process of manufacturing the plurality of films in the display panel, a key device of the exposure process is an exposure machine, and each exposure process requires a mask in the exposure machine.
The traditional exposure machine is mainly a photomask pattern transfer type exposure machine, the exposure machine is limited by a photomask mask transfer technology, patterns on a mask are transferred to a substrate, the patterns formed by one mask are limited, and a step exposure strategy is difficult to realize.
Therefore, a plurality of masks are needed in the process of manufacturing a plurality of films in the display panel. There arises a problem that the manufacturing process of the display panel becomes complicated and the cost of the display panel increases.
Disclosure of Invention
In order to solve the above problems, the present invention provides a mask, a method for manufacturing the same, and a display panel, which aims to solve the problems that the existing mask has too few patterns, a plurality of films need to use a plurality of masks, and the manufacturing cost of the display panel is increased
In one aspect, the present invention provides a mask, comprising:
a substrate;
a light shielding region formed on the substrate to shield a predetermined wavelength band of radiation light;
a fully transmissive region formed on the substrate to fully transmit the irradiated light; and
two or more semi-transmissive regions formed on the substrate to transmit a part of the radiation light;
wherein each semi-transmission area is respectively composed of semi-transmission materials with different forbidden band widths.
In some embodiments, the semi-transmissive material comprises a semiconductor material having light absorbability, and the amount or intensity of the radiated light transmitted through the two or more semi-transmissive regions is controlled according to a forbidden bandwidth of the semiconductor material.
In some embodiments, the semi-transmissive material further comprises a dopant material having an adjustability of the forbidden bandwidth of the semiconductor material to adjust the amount or intensity of transmitted radiant light in the semi-transmissive region.
In some embodiments, the weight percentage of the doping material in the semiconductor material may be in a range of 0% to 50%, 1% to 40%, 2% to 30%, and specifically may be 0.01%, 0.05%, 0.1%, 1%, 5%, 15%, 20%, 35%, 40%, etc., and the above weight percentage ranges are merely examples, and in other embodiments of the present invention, the weight percentage of the doping material in the semiconductor material may also be in other ranges, such as 0% to 10%.
In some embodiments, the semiconductor material comprises zinc oxide (ZnO) and the dopant material comprises (CdS)1-x (zns) x, where subscript x is a natural number, such as 1 or 0, to define the number of each chemical element.
In some embodiments, the semiconductor material comprises TiO2The doping material includes a metal material, such as vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), niobium (Nb), molybdenum (Mo), and rhodium (Rh).
In some embodiments, the light-shielding region is composed of a light-shielding material including chromium (Cr).
In some embodiments, the thickness of the semi-transmissive material may be in a range of 0.01mm to 2mm, and specifically may be in a range of 0.05mm, 0.1mm, 0.25mm, 0.5mm, 1mm, 1.5mm, etc., and the thickness of the semi-transmissive material is only an example, and in other embodiments of the present invention, the thickness of the semi-transmissive material may be in other ranges, such as 0.01mm to 0.2 mm.
In a second aspect, the present invention provides a method for preparing a mask, comprising:
a light shielding region for shielding the radiation light of a predetermined wavelength band, a complete transmission region for completely transmitting the radiation light, and more than two semi-transmission regions for transmitting part of the radiation light are formed on the substrate,
wherein each semi-transmission area is respectively composed of semi-transmission materials with different forbidden band widths.
In some embodiments, the light-shielding region and the two or more semi-transmission regions are formed on the substrate by using an evaporation process, a photoresist coating process, an exposure process, a development process, an etching process and a photoresist removing process.
In a third aspect, the present invention provides a display panel, where the display panel includes a substrate, the substrate includes a plurality of film layers stacked in sequence from bottom to top, and the plurality of film layers are prepared by using the mask according to the first aspect.
In some embodiments, the plurality of film layers include a first film layer, a second film layer and a third film layer stacked in sequence from bottom to top, and when the transmission amount or intensity of the radiation light of the first semi-transmission region in the mask is greater than that of the second semi-transmission region, the first film layer corresponds to the first semi-transmission region, the second film layer corresponds to the second semi-transmission region, and the third film layer corresponds to the light shielding layer. The mask can realize different light transmission amounts and intensities in different areas according to the first semi-transmission area, the second semi-transmission area and the light shielding layer, thereby realizing step exposure and forming a pattern with multiple film layers by one mask.
Has the advantages that: the invention provides a mask plate, which is provided with more than two semi-transmission areas formed on a substrate, wherein each semi-transmission area is respectively made of semi-transmission materials with different forbidden band widths. According to the principle that the semi-transmission material has selective absorption on the radiation light with different wavelengths, the absorption of the semi-transmission material on the radiation light is controlled by adjusting the forbidden band width of the semi-transmission material. And then the radiation light is selectively absorbed by areas by utilizing the patterned distribution of the semi-transmission material, so that the exposure degree of different areas of an exposure target object is accurately controlled, the pattern effect of forming a plurality of film layers by one mask is realized, the step exposure of the traditional exposure machine is realized, and the manufacturing cost of the display panel is saved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below.
FIG. 1 is a schematic structural diagram of a mask provided in an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a process for preparing a mask provided in an embodiment of the present invention;
fig. 3 is a schematic process flow diagram of a process for preparing a plurality of films by using a mask provided in an embodiment of the present invention.
Wherein the reference numbers indicate:
10-mask plate; 11-a substrate; 12-a shading area; 13-a fully transmissive region; 14-a semi-transmissive region; 141-a first semi-transmissive region; 142-a second semi-transmissive region; 15-a light-shielding layer; 16-a first semi-transmissive layer; 17-a second semi-transmissive layer; 20-a substrate; 21-a film layer; 211-a first film layer; 212-a second film layer; 213-third film layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present disclosure, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The embodiment of the invention provides a mask, a preparation method thereof and a display panel. The following are detailed below.
First, referring to fig. 1, the present invention provides a mask 10, wherein the mask 10 includes: a substrate 11, a light-shielding region 12, a full transmission region 13, and two or more semi-transmission regions 14. In one embodiment, the light-shielding region 12, the fully transmissive region 13, and the two or more semi-transmissive regions 14 are disposed above the substrate 11.
The substrate 11 is generally made of a material that is capable of transmitting light, such as: quartz or glass.
The light-shielding region 12 is formed by patterning a light-shielding layer 15 deposited on the substrate 11, and the light-shielding layer 15 is made of a light-shielding material including, for example, chromium (Cr), CrxOy, or a mixed material thereof, for shielding a predetermined wavelength band of radiation light. But not limited thereto, the light-shielding material includes all materials capable of shielding light.
The two or more semi-transmissive regions are formed by patterning a semi-transmissive layer deposited on the substrate 11, and the full transmission region 13 is a portion exposed on the substrate 11 by patterning of the semi-transmissive region and the light-shielding region 12, for completely transmitting radiation of a predetermined wavelength band.
The semi-transmission layer is made of semi-transmission material, and the semi-transmission material is used for transmitting part of the radiation light with the preset wave band. Specifically, each of the semi-transmissive regions 14 is formed of a semi-transmissive material having a different band gap, so that different semi-transmissive regions 14 have different transmission amounts or transmission intensities of the radiated light.
For example, in fig. 1, the half transmission region 14 includes a first half transmission region 141 and a second half transmission region 142, the first half transmission region 141 corresponding to a first half transmission material, and the second half transmission region corresponding to a second half transmission material. If desired, there may be other numbers of semi-transmissive regions and corresponding semi-transmissive materials, such as a third semi-transmissive region and a third semi-transmissive material, and the details are not limited herein.
In addition to the above embodiments, in an embodiment of the present invention, the semi-transmissive material includes a semiconductor material having light absorbability, and the transmission amount or intensity of the radiated light in the two or more semi-transmissive regions 14 is controlled according to a forbidden bandwidth of the semiconductor material.
In one embodiment, the semi-transmissive material further includes a doping material that can adjust the forbidden band width of the semiconductor material to adjust the transmission amount or transmission intensity of the radiation of the semi-transmissive region 14. In other words, the amount or intensity of the radiated light transmitted by the two or more semi-transmissive regions 14 may be adjusted according to the type or/and weight percentage of the doping material, for example, when the weight percentages of the doping materials are the same, the amount or intensity of the radiated light may be adjusted according to the type of the doping material. For another example, the semiconductor material and the doping of the two or more semi-transmissive regions 14 are not uniform, and the amount or intensity of the transmitted radiation light is adjusted by the different semiconductor material and the different doping material.
Specifically, the weight percentage of the doping material in the semiconductor material is in a range of 0% to 50%, 1% to 40%, 2% to 30%, and specifically may be 0.01%, 0.05%, 0.1%, 1%, 5%, 15%, 20%, 35%, 40%, and the like, and the above weight percentage ranges are merely examples, and in other embodiments of the present invention, the weight percentage of the doping material in the semiconductor material may also be in other ranges, for example, 0% to 10%, and specifically, the present invention is not limited herein.
In some embodiments, the semiconductor material comprises TiO2The doping material includes a metal material, such as vanadium (V), chromium (Cr), manganese (Mn), iron (Fe)Cobalt (Co) and rhodium (Rh) in other embodiments of the present invention, the doping material may also be other metal materials, such as niobium (Nb) and molybdenum (Mo), which is not limited herein.
In one embodiment, the semiconductor material comprises zinc oxide (ZnO) and the dopant material comprises (CdS)1-x(ZnS)x. Where the subscript x is a natural number, such as 1 or 0, to define the number of each chemical element. For example, in one embodiment, by adjusting the content of the doped material, the forbidden bandwidth can be adjusted within a range of 2eV to 4eV, and the corresponding absorption boundary can be adjusted within a range of 300-550 nm.
It should be noted that the wavelength of the radiation light is not limited in the embodiments of the present invention, and in one embodiment, the wavelength of the radiation light is a conventionally used wavelength, for example: 436nm, 405nm or 365 nm.
It is understood that the semiconductor material is only an example, and in other embodiments of the present invention, the semiconductor material may be any material capable of absorbing the radiation light or generating the excitation light by absorbing the radiation light, and is not limited herein.
In one embodiment, the thickness of the semi-transmissive material may be in a range of 0.01mm to 2mm, and specifically may be in a range of 0.05mm, 0.1mm, 0.25mm, 0.5mm, 1mm, 1.5mm, etc., it is understood that the thickness of the semi-transmissive material is merely exemplary, and in other embodiments of the present invention, the thickness of the semi-transmissive material may be in other ranges, such as 0.01mm to 0.2 mm.
The principle of realizing the step exposure of the mask plate 10 provided by the embodiment of the invention is as follows: different substances have different molecular compositions and structures, have different characteristic energy levels and different energy level differences, and can only absorb light radiation equivalent to the energy level difference inside the molecules of the substances, so that the different substances have selectivity on the absorption of light with different wavelengths. Taking a solid material as an example, the solid material includes a semiconductor material in an embodiment of the present invention, wherein a relationship between an absorption boundary (i.e., a wavelength range of absorbing radiation light, in nm) of the solid material and a forbidden bandwidth (in eV) is shown in formula 1:
absorption boundary (λ) ═ 1240/forbidden band width (Eg) (1)
In the mask 10 provided by the embodiment of the present invention, each of the semi-transmissive regions 14 is made of a semi-transmissive material having a different band gap. According to the principle that the semi-transmission material has selective absorption on the radiation light with different wavelengths, the absorption boundary of the semi-transmission material on the radiation light is controlled by adjusting the forbidden band width of the semi-transmission material. The difference of the absorption boundaries can realize the difference of the transmission amount or the transmission intensity of the radiation light, and further the invention can utilize the patterned distribution of the semi-transmission material to selectively absorb the radiation light in different areas, thereby accurately controlling the exposure degree of different areas of the exposure target object, namely realizing the pattern effect of forming a plurality of film layers by one mask plate 10, realizing the step exposure, enriching the diversity of the manufacturing process and saving the manufacturing cost of the display panel.
In order to better understand the present invention, an embodiment of the present invention further provides a method for preparing a mask 10, where the method includes:
a light-shielding region 12 for shielding radiation light of a predetermined wavelength band, a full-transmission region 13 for transmitting the radiation light, and two or more semi-transmission regions 14 for transmitting a part of the radiation light are formed on a substrate 11, respectively, wherein each of the semi-transmission regions 14 is formed of a semi-transmission material having a different band gap.
In some embodiments, the light-shielding region 12 and the two or more half-transmission regions 14 are formed on the substrate 11 by using an evaporation process, a photoresist coating process, an exposure process, a development process, an etching process, and a photoresist removing process.
In an embodiment, referring to fig. 2, the semi-transmissive material includes a first semi-transmissive material and a second semi-transmissive material, and the method for preparing the mask 10 includes:
s1, forming a light shielding layer 15 and first photoresist on the substrate 11 in sequence, and patterning the light shielding layer 15 by using an exposure process, a developing process, an etching process and a process for removing the first photoresist in sequence to form a light shielding area 12 for shielding radiation light.
S2, sequentially forming a first semi-transmission layer 16 and second photoresist on the shading layer 15, and sequentially using an exposure process, a developing process, an etching process and a process for removing the second photoresist to pattern the first semi-transmission layer 16 to form a first semi-transmission region 141 for transmitting partial radiation light.
The first semi-transmissive layer 16 is composed of a first semi-transmissive material.
And S3, sequentially forming a second semi-transmission area 142 and a third photoresist on the first semi-transmission layer 16, and sequentially forming the second semi-transmission area 142 for transmitting part of light on the first semi-transmission layer 16 by using an exposure process, a development process, an etching process and a photoresist removing process.
The second semi-transmissive layer 17 is made of a second semi-transmissive material having a different band gap from the first semi-transmissive material.
After the light-shielding layer 15, the first semi-transmissive layer 16 and the second semi-transmissive layer 17 are patterned, an exposed portion is formed on the substrate 11, and the exposed portion of the substrate 11 is used as a complete transmission region 13 for transmitting light and completely transmitting radiation of a predetermined wavelength band.
The preparation method of the mask 10 provided by the embodiment of the invention is simple, and each semi-transmission area 14 in the prepared mask 10 is made of semi-transmission materials with different forbidden band widths. According to the principle that the semi-transmission material has selective absorption on the radiation light with different wavelengths, the absorption of the semi-transmission material on the radiation light is controlled by adjusting the forbidden band width of the semi-transmission material. And then the radiation light is selectively absorbed by areas by utilizing the patterned distribution of the semi-transmission material, so that the exposure degree of the photoresist in different areas is accurately controlled, the effect of forming a pattern of a plurality of films by one mask plate 10 is realized, and the step exposure of the traditional exposure machine is realized.
For better understanding of the present invention, based on the above embodiments, the present invention further provides a display panel, referring to fig. 3, the display panel includes a substrate 20, the substrate 20 includes a plurality of layers 21, and the plurality of layers 21 are prepared by using the mask 10 described in any of the above embodiments.
The plurality of film layers 21 include a first film layer 211, a second film layer 212 and a third film layer 213 which are sequentially stacked from bottom to top, the mask 10 can realize different transmission amounts and intensities of light in different areas according to the first semi-transmission area 141, the second semi-transmission area 142 and the light shielding layer 15, thereby realizing step exposure, and the pattern of the plurality of film layers 21 can be formed by one mask 10.
For example, as shown in fig. 3, when the amount or intensity of the radiated light in the second semi-transmissive region 141 of the reticle 10 is greater than that of the first semi-transmissive region 142, in the case of a positive photoresist coated on the film layers, the first film layer 211 corresponds to the first semi-transmissive region 141, the second film layer 212 corresponds to the second semi-transmissive region 142, and the third film layer 213 corresponds to the light-shielding layer 15.
The widths of the first film layer 211, the second film layer 212 and the third film layer 213 are gradually decreased from bottom to top. It should be noted that the distribution of the first semi-transmissive region 141, the second semi-transmissive region 142 and the light-shielding region 12 in the mask 10 is not limited to the distribution shown in fig. 3, and in another embodiment of the present invention, the distribution may be adjusted according to actual conditions, and the shape of the stack of the plurality of corresponding film layers 21 is also different, and is not limited herein.
It should be noted that the film 21 is only an example, and in an embodiment, the film 21 may be correspondingly disposed in other numbers, such as four layers or five layers, according to the number of the semi-transmission regions.
In some embodiments, the process of forming the plurality of film layers 21 by the mask 10 includes an evaporation process, a photoresist coating process, an exposure process, a developing process, an etching process, and a photoresist removing process.
On the basis of the above embodiment, the present invention further provides a specific embodiment, where the substrate is specifically an array substrate, the array substrate includes a plurality of film layers 21, and the film layers 21 respectively include a gate, an active layer, and a source/drain (not shown) stacked in sequence from bottom to top, where the active layer is located above the gate, and the source/drain is located on the same layer as the active layer.
When the transmission amount or intensity of the radiation light passing through the second semi-transmission region 142 in the mask 10 is greater than that of the first semi-transmission region 141, under the condition of the positive photoresist coated on the film layer, the gate corresponds to the first semi-transmission region 141, the active layer corresponds to the second semi-transmission region 142, and the source/drain corresponds to the light shielding layer 15.
Specifically, when forming the patterns of the plurality of films 21, only different regions of the mask 10 need to be opened, for example, when a gate needs to be formed, only the pattern of the gate needs to be opened, and processes such as exposure and etching are performed, where the pattern forming process is a conventional process, and is not described herein again.
It should be noted that, in the above-mentioned display panel embodiment, only the above-mentioned structure is described, and it is understood that, in one example, the display panel is a liquid crystal display panel, and in addition to the above-mentioned structure, the liquid crystal display panel includes an array substrate and an opposite substrate, which are opposite to each other to form a liquid crystal cell, and a liquid crystal material is filled in the liquid crystal cell. The counter substrate is, for example, a color filter substrate. The pixel electrode of each sub-pixel unit of the array substrate is used for applying an electric field to control the rotation degree of the liquid crystal material so as to perform display operation. In general, a liquid crystal display panel includes a backlight which is disposed on the rear side of an array substrate with respect to a counter substrate, for example.
Another example of the display panel is an Organic Light Emitting Diode (OLED) display panel, in which organic light emitting diodes are formed on an array substrate, and a pixel electrode of each sub-pixel unit may serve as an anode or a cathode of the organic light emitting diode or may be electrically connected to the anode or the cathode of the organic light emitting diode for driving the organic light emitting diode to emit light for a display operation.
Still another example of the display panel is an electronic paper display panel in which an electronic ink layer is formed on an array substrate, and a pixel electrode of each sub-pixel unit is used as a voltage for applying a voltage for driving charged microparticles in the electronic ink to move for a display operation.
The mask, the preparation method thereof and the display panel provided by the embodiment of the invention are described in detail, a specific example is applied in the description to explain the principle and the implementation of the invention, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A reticle, comprising:
a substrate;
a light shielding region formed on the substrate to shield a predetermined wavelength band of radiation light;
a fully transmissive region formed on the substrate to fully transmit the irradiated light; and
two or more semi-transmissive regions formed on the substrate to transmit a part of the radiation light;
wherein each semi-transmission area is respectively composed of semi-transmission materials with different forbidden band widths.
2. The reticle of claim 1, wherein the semi-transmissive material comprises a semiconductor material.
3. The reticle of claim 2, wherein the semi-transmissive material further comprises a dopant material having an adjustability of a forbidden bandwidth of the semiconductor material.
4. The mask as claimed in claim 3, wherein the semiconductor material comprises ZnO, and the dopant material comprises ZnOMaterial comprises (CdS)1-x(ZnS)xWherein the subscript x is a natural number and defines the number of each chemical element.
5. The reticle of claim 3, wherein the semiconductor material comprises TiO2The doping material comprises a metal material.
6. The reticle of claim 1, wherein the light-blocking region is comprised of a light-blocking material, the light-blocking material comprising Cr.
7. The reticle of claim 1, wherein the semi-transmissive material has a thickness in a range of 0.01mm to 0.2 mm.
8. A preparation method of a mask is characterized by comprising the following steps:
a light shielding region for shielding the radiation light of a predetermined wavelength band, a complete transmission region for completely transmitting the radiation light, and more than two semi-transmission regions for transmitting part of the radiation light are formed on the substrate,
wherein each semi-transmission area is respectively composed of semi-transmission materials with different forbidden band widths.
9. The method of claim 8, wherein the light-shielding region and the at least two semi-transmissive regions are formed by an evaporation process, a photoresist coating process, an exposure process, a development process, an etching process, and a photoresist removal process.
10. A display panel, comprising a substrate, wherein the substrate comprises a plurality of layers stacked in sequence from bottom to top, and the plurality of layers are prepared by using the mask according to any one of claims 1 to 7.
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| CN202110035362.4A CN112799278A (en) | 2021-01-12 | 2021-01-12 | Mask, preparation method thereof and display panel |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101438386A (en) * | 2007-05-11 | 2009-05-20 | Lg麦可龙电子公司 | Intermediate tone mask with a plurality of semi-permeation parts and method of manufacturing the same |
| CN110347012A (en) * | 2019-06-26 | 2019-10-18 | 深圳市华星光电技术有限公司 | A kind of mask plate and preparation method thereof |
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2021
- 2021-01-12 CN CN202110035362.4A patent/CN112799278A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101438386A (en) * | 2007-05-11 | 2009-05-20 | Lg麦可龙电子公司 | Intermediate tone mask with a plurality of semi-permeation parts and method of manufacturing the same |
| CN110347012A (en) * | 2019-06-26 | 2019-10-18 | 深圳市华星光电技术有限公司 | A kind of mask plate and preparation method thereof |
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Application publication date: 20210514 |