CN112799159B - Ultraviolet-visible-infrared all-band absorber and preparation method thereof - Google Patents
Ultraviolet-visible-infrared all-band absorber and preparation method thereof Download PDFInfo
- Publication number
- CN112799159B CN112799159B CN202110119397.6A CN202110119397A CN112799159B CN 112799159 B CN112799159 B CN 112799159B CN 202110119397 A CN202110119397 A CN 202110119397A CN 112799159 B CN112799159 B CN 112799159B
- Authority
- CN
- China
- Prior art keywords
- visible
- ultraviolet
- infrared
- layer
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Abstract
The invention discloses an ultraviolet-visible-infrared all-band absorber, which comprises: a substrate having a middle and far infrared band absorption function; an ultraviolet-visible-infrared full-band antireflection film system arranged on one side of the substrate; and the ultraviolet-visible-near infrared band absorption film system is arranged on the other side of the substrate. The invention also discloses a preparation method of the ultraviolet-visible-infrared full-waveband absorber. The ultraviolet-visible-infrared full-waveband absorber can realize efficient absorption of ultraviolet, visible and infrared full-waveband absorbers, is simple in structure and low in cost, and is suitable for large-area mass production.
Description
Technical Field
The invention belongs to the fields of stray light elimination, space detection, imaging, photo-thermal conversion, electromagnetic absorption and the like, and particularly relates to an ultra-wideband absorber of ultraviolet-visible-infrared full-waveband.
Background
Although broadband absorber research has been in progress for many years, most of the research is limited to the visible-near infrared band, and the ultraviolet-visible-infrared full band is rarely involved. In fact, carbon nanotubes or titanium oxide nanotubes and their derivatives have excellent absorption characteristics in all ultraviolet-visible-infrared bands, but their weak mechanical properties and unsatisfactory thermal/chemical stability severely limit their wide use and multi-field applications. The ultraviolet-visible-infrared full-band absorber has great requirements in the fields of stray light elimination, photo-thermal conversion, electromagnetic absorption and the like, so that an ultraviolet-visible-infrared full-band extremely-wide-band absorber which is simple in structure, simple and convenient in preparation method, excellent in mechanical property and excellent in thermal/chemical stability is urgently needed.
Disclosure of Invention
The invention provides an ultraviolet-visible-infrared full-waveband absorber which can cover absorption wavebands covering multiple ultraviolet, visible and infrared wavebands, has good absorption performance and has better incident angle insensitivity.
The invention also provides a preparation method of the ultraviolet-visible-infrared full-waveband absorber, and the method is convenient to prepare, low in cost and convenient for large-scale and batch production.
An ultraviolet-visible-infrared full-waveband absorber comprises a substrate, wherein an ultraviolet-visible-infrared full-waveband antireflection film system is arranged on one side of the substrate, an ultraviolet-visible-near infrared waveband absorption film system is arranged on the other side of the substrate, and light enters from the full-waveband antireflection film system side; the substrate has the function of absorbing middle and far infrared wave bands.
Preferably, the ultraviolet-visible-infrared full-band antireflection film system has a transmittance of more than 90% for incident ultraviolet-visible-near infrared; the substrate has an absorption rate of incident mid-infrared greater than 90%; the absorption rate of the ultraviolet-visible-near infrared band absorption film system to incident ultraviolet-visible-near infrared is more than 90%.
The substrate material is not limited, and the substrate can be selected from glass materials such as K9, fused silica, float glass and the like, and can also be selected from organic polymer materials such as organic glass (acrylic, PMMA, polymethyl methacrylate and the like), CR-39 (polypropylene-based diglycol carbonate), PC (polyethylene carbonate), PS (styrene) and the like. Further preferably, k9 glass.
The ultraviolet-visible-infrared full-band antireflection film system is formed by alternately stacking materials with similar ultraviolet-visible-near infrared band refractive indexes (the refractive index n to the ultraviolet-visible-near infrared band is generally lower than 1.6, the refractive index difference Deltan between the materials of two adjacent film layers is less than 0.1) and obvious middle and far infrared refractive index differences (the refractive index difference Deltan is greater than 0.4) (the middle and far infrared refractive indexes are low and are arranged close to a substrate, the film layers with low middle and far infrared refractive indexes are arranged on the top layer and the bottom layer of the ultraviolet-visible-infrared full-band antireflection film system), at least one of the materials is a middle and far infrared band absorbing material, wherein the middle and far infrared band absorbing material is selected from silicon oxide, titanium oxide, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, niobium oxide, silicon nitride, silicon carbide and compounds thereof, the middle-far infrared transparent material is selected from magnesium fluoride, yttrium fluoride, ytterbium fluoride, lanthanum fluoride, zinc sulfide and zinc selenide. Preferably, the refractive index of the ultraviolet-visible-infrared full-band antireflection film system to the ultraviolet-visible-near infrared band is similar to that of the substrate material at the same time.
Preferably, the ultraviolet-visible-infrared full-band antireflection film is a film stack formed by alternately stacking magnesium fluoride/silicon oxide film layers, and the magnesium fluoride film layers are positioned on the top layer and the bottom layer. Wherein the number of the magnesium fluoride film layers is 2-7; the number of layers of the silicon oxide film layer is 1-6. The thickness of the magnesium fluoride film layer is 100-1200 nm; the thickness of the silicon oxide film layer is 100-1000 nm. In a specific embodiment, the number of the magnesium fluoride film layers is 3, and the thicknesses of the magnesium fluoride film layers are 730nm, 1050nm and 140nm respectively; the number of the silicon oxide film layers is 2, and the thicknesses are 770nm and 180nm respectively.
The ultraviolet-visible-near infrared band absorption film is composed of two layers of wide band antireflection film layers, a top germanium layer, a germanium layer/metal absorption layer alternating film layer and a bottom metal absorption layer from the substrate to the outside; the two broadband antireflection film layers respectively comprise a bottom layer and a substrate layer which are sequentially arranged on the top germanium layer, and the refractive indexes of the bottom layer and the substrate layer which are closest to the bottom layer are gradually reduced (the refractive index of the bottom layer to the ultraviolet-visible-near infrared band is larger than that of the substrate layer which is closest to the bottom layer); the alternating germanium layer/metal absorber layer film layer is comprised of one or more germanium layer/metal absorber layer units, wherein the germanium layer is disposed adjacent to the bottom metal absorber layer.
Preferably, the metal absorbing layer (including the absorbing layer in the germanium layer/metal absorbing layer or the bottom metal absorbing layer) may be selected from chromium, titanium, iridium, tungsten, nickel, and alloys thereof; further preferably, the metal absorption layer may be chromium.
Preferably, the germanium layer/metal absorbing layer alternating film layer is formed by alternately stacking germanium layers and metal absorbing layers, wherein the metal absorbing layer is arranged close to the top germanium layer, and the germanium layer is arranged close to the bottom metal absorbing layer. Wherein the number of the germanium layers is 2-8, and the thickness is 30-100 nm; the number of the metal absorption layers is 2-8, and the thickness is 5-50 nm; more preferably, the number of the germanium layers is 3-6, and the thickness is 40-80 nm; the number of the metal absorption layers is 3-6, and the thickness is 20-30 nm. As a specific embodiment, the germanium layer/metal absorbing layer alternating film layer is formed by alternately stacking 4 germanium layers and 4 metal absorbing layers, wherein the thicknesses of the 4 germanium layers are 45nm, 59nm, 71nm and 73nm respectively; the thicknesses of the 4 metal absorption layers are respectively 13nm, 14nm, 17nm and 28nm in sequence.
The thickness of the bottom metal absorption layer is more than 100 nm; further preferably 100-500 nm; more preferably 150-300 nm.
Preferably, the thickness of the top germanium layer is 6nm to 40 nm; a further preferred thickness is from 15nm to 35 nm.
Preferably, the two broadband antireflection film layers consist of a bottom layer and an outermost layer, the refractive indexes of the materials of the bottom layer and the outermost layer are gradually reduced from bottom to top, the bottom layer thin film material close to the top germanium layer is made of silicon, the thickness of the bottom layer thin film material is 10 nm-40 nm, and the further preferable thickness of the bottom layer thin film material is 15 nm-35 nm; the outermost layer film material can be selected from high-refractive-index dielectric materials or low-refractive-index dielectric materials such as titanium dioxide, hafnium oxide, tantalum oxide, silicon nitride, magnesium fluoride, silicon dioxide, yttrium fluoride and the like, and the thickness is 10 nm-200 nm, and the further preferable thickness is 30 nm-60 nm. The two broadband antireflection film layers are preferably a silicon film layer and a titanium dioxide film layer from bottom to top, wherein the silicon film layer is arranged close to the top germanium layer, and the titanium dioxide film layer is arranged close to the bottom side face of the substrate.
The invention also provides a preparation method of the ultraviolet-visible-infrared full-waveband absorber, which comprises the following steps:
(1) designing an ultraviolet-visible-infrared full-waveband antireflection film system and an ultraviolet-visible-near-infrared waveband absorption film system which meet the requirements by optimizing the thickness of each layer of film according to the required bandwidth requirement and absorption rate requirement of the absorber; the step can adopt the existing software to realize the optimization operation;
(2) putting the substrate into an acetone solution for ultrasonic treatment, and then cleaning the substrate by using ethanol; then putting the substrate into an ethanol solution for ultrasonic treatment, and then cleaning the substrate by using deionized water; finally, putting the substrate into deionized water for ultrasonic treatment, and then cleaning the substrate again by using the deionized water;
(3) sequentially depositing each film layer of the ultraviolet-visible-infrared full-waveband antireflection film system on one side of a substrate by adopting vacuum coating; sequentially depositing film layers of an ultraviolet-visible-near infrared band absorption film system on the other side of the substrate by adopting vacuum coating; obtaining the ultraviolet-visible-infrared all-band absorber.
Preferably, in the step (2), the time for each ultrasonic treatment is generally 5-30 min; more preferably 5 to 10 min.
Because ultraviolet-visible-infrared full-waveband absorption relates to absorption of a plurality of wavebands, and band gaps of single materials cannot be realized, the ultraviolet-visible-infrared full-waveband antireflection film system/substrate/ultraviolet-visible-near infrared waveband absorption film system provided by the invention respectively realizes high-efficiency absorption of different wavebands, and is a wider and more excellent ultra-wide waveband absorber. The ultraviolet-visible-near infrared band absorption film system is responsible for the absorption requirements of the ultraviolet-visible-near infrared band, the substrate is mainly responsible for the absorption band of the middle and far infrared band, and the ultraviolet-visible-infrared full-band antireflection film system greatly improves the absorption of a part of middle and far infrared band (taking glass as an example, 8-10 mu m) with higher specific reflection under the condition of not influencing the low reflection of the ultraviolet-visible band, thereby further improving the absorption efficiency of the middle and far infrared band. Therefore, the film system/substrate/film system structure of the invention is not simply stacked, but is the overall optimized result after segmented high-efficiency absorption of the ultraviolet-visible-infrared full-wave band (0.3-25 μm).
Compared with the traditional absorber, the ultraviolet-visible-infrared full-waveband absorber has the advantages that the absorbing waveband which can be covered by the ultraviolet-visible-infrared full-waveband absorber is wider, the ultraviolet, visible and infrared wavebands are covered, and the ultraviolet-visible-infrared full-waveband absorber has better incident angle insensitivity. Therefore, the ultra-wide band absorption performance of the ultraviolet-visible-infrared band of the invention completely surpasses that of the traditional absorber. Because the ultra-wideband absorber structure of the ultraviolet-visible-infrared full-waveband is based on a compact multi-layer thin film structure, the structure is simpler compared with the traditional wideband absorber and the artificial electromagnetic absorber proposed in recent years. Due to the compact multi-layer thin film structure, the ultra-wideband absorber structure of the ultraviolet-visible-infrared full-waveband avoids complex nano processing technologies such as an electron beam processing technology, a focused ion beam etching technology, a reactive ion etching technology, a photoetching technology and the like, so that the production cost is obviously reduced, the production period is obviously shortened, and the large-scale and mass production is facilitated.
The invention utilizes materials with different absorption band gaps and the incident blocking effect of the metal absorption layer, and combines the design of an antireflection film system with an extremely wide waveband (part of waveband is aimed at not increasing reflection), thereby constructing a non-transmission antireflection structure with an ultraviolet-visible-infrared extremely wide waveband, and realizing the absorption of the ultraviolet-visible-infrared full waveband with high efficiency and insensitive angle. The ultraviolet-visible-infrared all-band absorber has the advantages of simple structure, convenient preparation and low cost, and is suitable for large-area mass production, so that the preparation cost of the ultraviolet-visible-infrared all-band absorber is greatly reduced. On the other hand, although the carbon nanotube/titanium dioxide nanotube and its derivatives have excellent absorption characteristics in the ultraviolet-visible-infrared band, their weak mechanical properties, and unsatisfactory thermal/chemical stability restrict large-area applications. The ultra-wide band absorber based on the compact film structure has the advantages of simple structure, good mechanical property and greatly improved thermal/chemical stability, so that the ultra-wide band absorber can be used in more and wider application occasions. Therefore, the invention is expected to be widely applied in the aspects of stray light elimination, photothermal conversion, electromagnetic absorption, detection, imaging and the like, and makes contributions to the fields of national economy, social development, scientific technology, national defense construction and the like in China.
Drawings
FIG. 1 is a schematic diagram of the structure of the ultraviolet-visible-infrared full-band absorber of the present invention;
FIG. 2 is a flow chart of the preparation of the UV-VIS-IR full band absorber of the present invention;
FIG. 3 is a chart of the reflection spectrum of the UV-VIS-IR full band antireflection film system/substrate in the 0.36 μm-25 μm band according to the present invention;
FIG. 4 is a 0.3 μm-3.5 μm band absorption spectrum of the substrate/UV-VIS-NIR band absorption film system of the present invention:
FIG. 5 is a 0.3-25 μm band absorption spectrum diagram of the ultraviolet-visible-infrared full band absorber of the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
As shown in figure 1, the ultraviolet-visible-infrared full-band absorber consists of a substrate 1, a plurality of ultraviolet-visible-infrared full-band antireflection film systems 2 above the substrate and a plurality of ultraviolet-visible-near infrared band absorption film systems below the substrate.
The substrate 1 is made of middle and far infrared absorbing materials, such as K9, fused quartz, float glass and other glass materials, and organic polymer materials such as organic glass (acrylic, PMMA, polymethyl methacrylate and the like), CR-39 (polypropylene diglycol carbonate), PC (polyethylene carbonate) and PS (styrene) can be selected.
The ultraviolet-visible-infrared full-band antireflection film system 2 is formed by alternately stacking materials with similar refractive indexes of ultraviolet-visible-near infrared bands but significant difference of middle and far infrared refractive indexes, wherein at least one material is a middle and far infrared band absorption material, and the other material is a middle and far infrared band transparent material, wherein the middle and far infrared band absorption material is selected from silicon oxide, titanium oxide, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, niobium oxide, silicon nitride, silicon carbide and compounds thereof, the middle and far infrared band transparent material is selected from magnesium fluoride, yttrium fluoride, ytterbium fluoride, lanthanum fluoride, zinc sulfide and zinc selenide, the middle and far infrared band absorption material is preferably silicon oxide, and the middle and far infrared band transparent material is preferably magnesium fluoride. The film system structure of the ultraviolet-visible-infrared all-band antireflection film system is preferably (magnesium fluoride/silicon oxide) S Magnesium fluoride, where S is an integer, represents the number of alternating stack units.
The bottom film of the ultraviolet-visible-near infrared band absorption film system is a metal absorption layer 3, and the thickness of the metal absorption layer is more than 100nm so as to prevent incident light from penetrating the whole device and increase absorption; on top of the bottom metal absorption layer is an alternating film layer 7 of germanium/metal absorption layer, the adopted film system structure is (germanium/chromium) S’ S' is an integer representing an alternating stack of sheetsNumber of bits, the thickness of each layer is 10 nm-100 nm. The top germanium layer 4 is arranged on the germanium layer/metal absorption layer alternating film layer, the thickness of the top germanium layer is 10 nm-100 nm, two antireflection films (labeled as 5-6 in figure 1) are arranged on the top germanium layer, the refractive index of the materials is gradually reduced from bottom to top, titanium dioxide/silicon can be selected, and the two antireflection films can be regarded as wide-band antireflection films of germanium. The bottom metal absorber layer 3 may be selected from chromium, titanium, iridium, tungsten, nickel, and alloys of the above materials, and the bottom metal absorber layer 3 is preferably chromium in the present invention. In the alternating germanium/metal absorption layer 7, the germanium layer is the same as the top germanium layer, and the metal absorption layer is the same as the bottom metal absorption layer 3. The two broadband antireflection film layers (5-6) are a bottom layer 5 and an outermost layer 6, the refractive indexes of the materials are gradually reduced from bottom to top, the film material of the bottom layer 5 close to the top germanium layer 4 is silicon, the thickness is 10 nm-100 nm, the film material of the outermost layer 6 can be high-refractive-index dielectric materials such as titanium dioxide, hafnium oxide, tantalum oxide and silicon nitride or low-refractive-index dielectric materials such as magnesium fluoride, silicon oxide and yttrium fluoride, and the thickness is 20 nm-130 nm. The two-layer broadband antireflection film layer is preferably made of silicon and titanium dioxide from bottom to top.
A method for preparing an ultraviolet-visible-infrared full-band absorber, comprising the following steps, as shown in fig. 2:
1) designing an ultraviolet-visible-infrared full-waveband antireflection film system and an ultraviolet-visible-near-infrared waveband absorption film system (comprising film layer materials, film layer number, film layer thickness and the like) which meet the requirements by optimizing the thickness of each layer of film according to the required bandwidth requirement and absorption rate requirement of the absorber; the step can adopt the existing software to realize the optimization operation; determining coating conditions according to the film layer material and the film layer thickness;
2) putting the substrate material into an acetone solution for ultrasonic treatment for 8 minutes, and then cleaning the substrate with ethanol; then putting the substrate into an ethanol solution for ultrasonic treatment for 8 minutes, and then cleaning the substrate by using deionized water; finally, putting the substrate into deionized water for ultrasonic treatment for 8 minutes, and then cleaning the substrate again by using the deionized water;
3) sequentially depositing each film layer of the ultraviolet-visible-infrared full-waveband antireflection film system on one side of a substrate by adopting vacuum coating; sequentially depositing film layers of an ultraviolet-visible-near infrared band absorption film system on the other side of the substrate by adopting vacuum coating; obtaining the ultraviolet-visible-infrared all-band absorber.
The ultra-wide band absorption of the ultraviolet-visible-infrared full-band absorber is realized based on a multi-absorption band gap material and a structural action and assisted by the design of an ultra-wide band anti-reflection film layer. The ultraviolet-visible-infrared full-waveband antireflection film system/substrate/ultraviolet-visible-near-infrared waveband absorption film system provided by the invention respectively realizes high-efficiency absorption on different wavebands. The ultraviolet-visible-near infrared band absorption film system is responsible for the absorption requirements of the ultraviolet-visible-near infrared band, the substrate is mainly responsible for the absorption band of the middle and far infrared band, and the ultraviolet-visible-infrared full band antireflection film system greatly improves the absorption of part of middle and far infrared bands (taking glass as an example, 8-10 mu m) with higher specific reflection under the condition of not influencing the low reflection of the ultraviolet-visible band, so that the absorption efficiency of the middle and far infrared bands is further improved. Therefore, the film system/substrate/film system structure of the invention is not simply stacked, but is the overall optimized result after segmented high-efficiency absorption of the ultraviolet-visible-infrared full-wave band (0.3-25 μm).
As shown in fig. 3, after the uv-visible-ir full-band antireflection film system (glass | magnesium fluoride | silicon oxide | magnesium fluoride, and the thicknesses of the film layers are 730nm, 770nm, 1050nm, 180nm, and 140nm in sequence) is deposited on the glass substrate, the apparent reflection loss of the mid-and far-infrared bands due to the mismatch of the refractive indexes of the substrate material and the air interface is greatly reduced, and the average reflection of the mid-and far-infrared bands at 3-25 μm can be reduced to within 5%; meanwhile, as the refractive indexes of the film layer alternate materials are similar to those of the substrate material in the ultraviolet-visible-near infrared band, no obvious reflection exists in the ultraviolet-visible-near infrared band. And a mid-infrared band absorbing material such as a glass substrate is opaque to the mid-infrared band, which means that the lower the reflectivity of the band, the higher the absorption. Therefore, the glass substrate/ultraviolet-visible-infrared full-band antireflection film system structure can effectively realize high-efficiency absorption of middle and far infrared bands, and the reflection of the ultraviolet-visible-near infrared bands is not obviously increased.
As shown in fig. 4, when the uv-visible-near infrared band absorption film system (glass | titania | silicon | germanium | chromium | germanium | chromium | deposition, each film thickness is 48nm, 31nm, 32nm, 13nm, 45nm, 14nm, 59nm, 17nm, 71nm, 28nm, 73nm, 200nm) is deposited on the glass substrate, the uv-visible-near infrared band absorption is significantly increased, and since the bottom metal layer is thick enough, no light is transmitted through the device. The band absorption occurs in the metal absorption layer and the semiconductor layers with different absorption band gaps, and the reflection loss of the band is further reduced by the antireflection combination of the uppermost layer, so that the absorption efficiency is improved.
The ultraviolet-visible-infrared full-waveband absorber is formed by skillfully combining the ultraviolet-visible-infrared full-waveband antireflection film system, the ultraviolet-visible-near infrared waveband absorption film system and the middle and far infrared absorption substrate, not only solves the defect of high reflectivity of the specific middle and far infrared waveband, but also overcomes the difficulty of incomplete absorption of the ultraviolet-visible-near infrared waveband, thereby realizing the high-efficiency absorption of the extremely wide waveband of 0.3-25 mu m, and as shown in figure 5, light is emitted into the structure from the upper part. The specific structure is magnesium fluoride/silicon oxide/magnesium fluoride/glass/titanium dioxide/silicon/germanium/chromium (the thicknesses are 140nm, 180nm, 1050nm, 770nm and 730nm in sequence; glass; 48nm, 31nm, 32nm, 13nm, 45nm, 14nm, 59nm, 17nm, 71nm, 28nm, 73nm and 200nm in sequence). the average absorption rate of the structure to the wave band with the wavelength of 0.3-25 mu m is higher than 95%, and the absorption rate of the structure to the whole wave band is higher than 90%. Therefore, the ultraviolet-visible-infrared full-band absorber can realize efficient absorption of ultraviolet-visible-infrared extremely wide bands only by a plurality of layers of films, and can be widely applied to a plurality of fields.
Claims (7)
1. An ultraviolet-visible-infrared full-band absorber, comprising:
a substrate having a middle and far infrared band absorption function;
an ultraviolet-visible-infrared full-band antireflection film system arranged on one side of the substrate;
an ultraviolet-visible-near infrared band absorption film system arranged on the other side of the substrate;
the transmittance of the ultraviolet-visible-infrared full-waveband antireflection film system to incident ultraviolet-visible-near infrared is more than 90%; the substrate has an absorption rate of incident mid-infrared greater than 90%; the absorption rate of the ultraviolet-visible-near infrared band absorption film system to incident ultraviolet-visible-near infrared is more than 90 percent
The ultraviolet-visible-infrared full-band antireflection film is formed by alternately stacking materials with similar refractive indexes of ultraviolet-visible-near infrared bands and obvious difference of medium and far infrared refractive indexes, wherein the refractive index n of the materials to the ultraviolet-visible-near infrared bands is lower than 1.6, the difference delta n of the refractive indexes of the materials of two adjacent film layers to the ultraviolet-visible-near infrared bands is less than 0.1, and the difference delta n of the refractive indexes of the materials of the two adjacent film layers to the far infrared bands is greater than 0.4; at least one of the materials is a middle and far infrared wave band absorption material; the refractive index of the ultraviolet-visible-infrared full-waveband antireflection film system to the ultraviolet-visible-near infrared waveband is similar to that of the substrate material.
2. The uv-vis-ir full band absorber according to claim 1, wherein the substrate material is selected from the group consisting of K9, fused silica, float glass, acrylic, PMMA, polymethylmethacrylate, polypropylene diglycol carbonate, polyethylene carbonate, styrene.
3. The ultraviolet-visible-infrared full band absorber according to claim 1, wherein the mid-far infrared band absorbing material is selected from one or more of silicon oxide, titanium oxide, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, niobium oxide, silicon nitride, silicon carbide; the other material is one or more of magnesium fluoride, yttrium fluoride, ytterbium fluoride, lanthanum fluoride, zinc sulfide and zinc selenide.
4. The uv-vis-ir full band absorber according to claim 1, wherein the uv-vis-nir band absorbing film stack comprises two broadband antireflection film layers, a top germanium layer, a germanium layer/metal absorbing layer alternating film layer and a bottom metal absorbing layer, arranged in sequence, the two broadband antireflection film layers respectively comprising a bottom layer and a most substrate layer arranged in sequence on the top germanium layer, the refractive indices of the bottom layer and the most substrate layer gradually decreasing; the alternating germanium layer/metal absorber layer film layer is comprised of one or more germanium layer/metal absorber layer units, wherein the germanium layer is disposed adjacent to the bottom metal absorber layer.
5. The uv-vis-ir full band absorber according to claim 4, wherein the metal absorber layer in the ge/metal absorber layer is selected from the group consisting of cr, ti, ir, w, ni and alloys thereof.
6. The UV-VIS-IR full band absorber according to claim 1, wherein the UV-VIS-IR full band antireflection film is composed of silicon oxide and magnesium fluoride stacked alternately, and the top and bottom layers are both magnesium fluoride; the ultraviolet-visible-near infrared band absorption film system comprises the following components in sequence from top to bottom: the film comprises two layers of broadband antireflection film layers consisting of titanium dioxide/silicon, a top germanium layer, a germanium layer/chromium alternating film layer and a bottom chromium metal absorption layer.
7. A method for preparing the ultraviolet-visible-infrared full-band absorber as claimed in any one of claims 1 to 6, comprising the steps of:
(1) designing parameters of an ultraviolet-visible-infrared full-waveband antireflection film system and an ultraviolet-visible-near-infrared waveband absorption film system which meet the requirements by optimizing the thickness of each layer of film according to the required bandwidth requirement and absorption rate requirement of the absorber;
(2) putting the substrate into an acetone solution for ultrasonic treatment, and then cleaning the substrate by using ethanol; then putting the substrate into an ethanol solution for ultrasonic treatment, and then cleaning the substrate by using deionized water; finally, putting the substrate into deionized water for ultrasonic treatment, and then cleaning the substrate again by using the deionized water;
(3) sequentially depositing each film layer of the ultraviolet-visible-infrared full-waveband antireflection film system on one side of a substrate by adopting vacuum coating; sequentially depositing film layers of an ultraviolet-visible-near infrared band absorption film system on the other side of the substrate by adopting vacuum coating; obtaining the ultraviolet-visible-infrared all-band absorber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110119397.6A CN112799159B (en) | 2021-01-28 | 2021-01-28 | Ultraviolet-visible-infrared all-band absorber and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110119397.6A CN112799159B (en) | 2021-01-28 | 2021-01-28 | Ultraviolet-visible-infrared all-band absorber and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112799159A CN112799159A (en) | 2021-05-14 |
| CN112799159B true CN112799159B (en) | 2022-08-05 |
Family
ID=75812508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110119397.6A Active CN112799159B (en) | 2021-01-28 | 2021-01-28 | Ultraviolet-visible-infrared all-band absorber and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112799159B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101403806A (en) * | 2008-11-05 | 2009-04-08 | 中国科学院上海技术物理研究所 | Visible/infrared wide optical spectrum color separation filter based on germanium substrate |
| CN105022106A (en) * | 2015-08-04 | 2015-11-04 | 浙江大学 | Absorber of ultra wide band of visible and near-infrared band and preparation method thereof |
| CN105891917A (en) * | 2016-04-22 | 2016-08-24 | 浙江大学 | Porous-alumina-based visible near infrared broadband absorber and preparation method thereof |
| CN110376666A (en) * | 2019-07-25 | 2019-10-25 | 江西师范大学 | A kind of ultra wide band perfection absorber of middle infrared band and preparation method thereof |
| CN112086522A (en) * | 2020-09-09 | 2020-12-15 | 浙江大学 | Radiation refrigeration solar cell module |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10481305B2 (en) * | 2015-08-04 | 2019-11-19 | Zhejiang University | Visible near-infrared ultra-broadband absorber and its preparation method |
| JP6707966B2 (en) * | 2016-04-18 | 2020-06-10 | 日本電気硝子株式会社 | Shading plate |
| FR3055706B1 (en) * | 2016-09-05 | 2018-09-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | ANTIREFLECTIVE, STRUCTURED AND HIGHLY LIFETIME OPTICAL SURFACE, AND METHOD FOR CARRYING OUT THE SAME |
| CN111025439B (en) * | 2019-12-16 | 2021-03-05 | 浙江大学 | Graphical broadband absorber and preparation method thereof |
-
2021
- 2021-01-28 CN CN202110119397.6A patent/CN112799159B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101403806A (en) * | 2008-11-05 | 2009-04-08 | 中国科学院上海技术物理研究所 | Visible/infrared wide optical spectrum color separation filter based on germanium substrate |
| CN105022106A (en) * | 2015-08-04 | 2015-11-04 | 浙江大学 | Absorber of ultra wide band of visible and near-infrared band and preparation method thereof |
| CN105891917A (en) * | 2016-04-22 | 2016-08-24 | 浙江大学 | Porous-alumina-based visible near infrared broadband absorber and preparation method thereof |
| CN110376666A (en) * | 2019-07-25 | 2019-10-25 | 江西师范大学 | A kind of ultra wide band perfection absorber of middle infrared band and preparation method thereof |
| CN112086522A (en) * | 2020-09-09 | 2020-12-15 | 浙江大学 | Radiation refrigeration solar cell module |
Non-Patent Citations (1)
| Title |
|---|
| 基于微纳结构的颜色滤光片研究;杨陈楹;《中国优秀博硕士学位论文全文数据库(博士)基础科学辑》;20170215;正文第79-87页、图5.1.12 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112799159A (en) | 2021-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Shanmugam et al. | Anti-reflective coating materials: A holistic review from PV perspective | |
| CN105022106B (en) | The ultra wide band absorber and preparation method of a kind of visible near-infrared wave band | |
| JP5774807B2 (en) | Narrow-band omnidirectional reflectors and their use as structural colors | |
| JP5580340B2 (en) | Method for manufacturing an omnidirectional multilayer photonic structure | |
| Moayedfar et al. | Various types of anti-reflective coatings (ARCS) based on the layer composition and surface topography: a review | |
| US20110168261A1 (en) | High transmittance optical windows and method of constructing the same | |
| US10481305B2 (en) | Visible near-infrared ultra-broadband absorber and its preparation method | |
| CN110441845B (en) | Method for improving laser damage threshold of reflecting film by gradient interface nano thin layer | |
| JP2018507429A (en) | IR reflective film | |
| CN111856639B (en) | All-dielectric ultraviolet filter film | |
| Schmid et al. | Nanoparticles for light management in ultrathin chalcopyrite solar cells | |
| CN107179571A (en) | A kind of visible ultra-wideband absorber and preparation method thereof | |
| WO2022253082A1 (en) | Visible light broadband perfect absorber based on transition metal film layer, and preparation method therefor | |
| CN108515743B (en) | Metal/medium ultra-wideband absorption film and preparation method thereof | |
| CN112799159B (en) | Ultraviolet-visible-infrared all-band absorber and preparation method thereof | |
| CN105161141B (en) | The ultra wide band absorber and preparation method of visible near-infrared wave band | |
| Hu et al. | Enhancement of solar absorption by a surface-roughened metal–dielectric film structure | |
| CN109521505B (en) | Optical absorption multilayer film | |
| Borisova et al. | Energy-efficient optically transparent coating based on a metal-dielectric composites | |
| CN115451594A (en) | Wide-spectrum solar absorption enhancement device and preparation method thereof | |
| CN115201941B (en) | Efficient infrared wide-spectrum antireflection film suitable for space environment | |
| CN103926642B (en) | Infrared cut-off light filtering films | |
| US20110083731A1 (en) | Solar-cell device with efficiency-improving nanocoating and method of manufacturing thereof | |
| RU2370797C1 (en) | Light-absorbing coating | |
| CN113759454B (en) | Incident light angle low-sensitivity structural color film of all-silicon material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |