CN112795891B - Semiconductor processing equipment - Google Patents

Semiconductor processing equipment Download PDF

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CN112795891B
CN112795891B CN202011528578.6A CN202011528578A CN112795891B CN 112795891 B CN112795891 B CN 112795891B CN 202011528578 A CN202011528578 A CN 202011528578A CN 112795891 B CN112795891 B CN 112795891B
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substrate
thickness
detection
uniformity
optical signal
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CN112795891A (en
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胡烁鹏
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Abstract

The invention provides semiconductor process equipment, which comprises a process chamber and a bearing disc arranged in the process chamber, and further comprises a thickness detection device, a bearing disc lifting device and a control device, wherein the thickness detection device is used for sending detection optical signals to a plurality of detection positions of a substrate on the bearing disc, receiving reflected optical signals of the plurality of detection positions and determining the thickness of the substrate at the plurality of detection positions according to the reflected optical signals, and the control device is used for determining the uniformity of the thickness of the substrate according to the thickness of the substrate at the plurality of detection positions and controlling the bearing disc lifting device to adjust the height of the bearing disc when the uniformity is higher than the preset uniformity. The semiconductor process equipment provided by the invention can adjust the uniformity of the film layer on the surface of the substrate in real time in the sputtering process, thereby improving the yield of products and saving the production cost.

Description

Semiconductor processing equipment
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to semiconductor process equipment.
Background
Physical Vapor Deposition (PVD) is widely used in the semiconductor industry, and has the advantages of low process temperature, fast Deposition rate, less impurities, environmental protection, no pollution, and the like. Magnetron sputtering is the most important one in PVD technology, and the basic principle of sputter coating is to make argon gas perform glow discharge under the vacuum condition of argon (Ar) gas, at this time, argon (Ar) atoms are ionized into argon ions (Ar +), the argon ions accelerate bombardment to form cathode target materials made of coating materials under the action of electric field force, and the target materials are sputtered out and deposited on the surface of a workpiece. Magnetron sputtering can be used not only for depositing metal films such as Au, ag, ti, al, cu, ni, ta \8230, but also for depositing compound films such as TiN, alN, ITO and SiO 2 And the like.
The uniformity of the film prepared by sputtering is the most important index of the process capability of PVD equipment, along with the development of semiconductor technology, the size requirement of a wafer is expanded, higher standards are provided for the precision of a semiconductor, the uniformity requirement of the film is higher and higher, along with the arrival of the 5G era, in the field of MEMS, particularly in a radio frequency device and a filter device, the fluctuation range of the film thickness in the semiconductor device does not exceed several angstroms
Figure BDA0002851558090000011
Higher standards are being put on the process capability of PVD equipment.
When a film growth process is performed by using the existing semiconductor processing equipment, the uniformity of the film is often poor, and the uniformity problem cannot be remedied when the workpiece is taken out of the process chamber and found. Therefore, how to provide a semiconductor processing apparatus capable of improving the uniformity of a thin film is a technical problem to be solved in the art.
Disclosure of Invention
The invention aims to provide semiconductor process equipment which can adjust the uniformity of a film layer on the surface of a substrate in real time, improve the yield of products and save the production cost.
In order to achieve the above object, the present invention provides a semiconductor processing apparatus, which includes a process chamber and a carrier tray disposed in the process chamber, and further includes a thickness detection device, a carrier tray lifting device, and a control device, wherein the thickness detection device is configured to send detection light signals to a plurality of detection positions of a substrate on the carrier tray and receive reflected light signals of the plurality of detection positions, and determine thicknesses of the substrate at the plurality of detection positions according to the reflected light signals, and the control device is configured to determine uniformity of the thickness of the substrate according to the thicknesses of the substrate at the plurality of detection positions, and control the carrier tray lifting device to adjust a height of the carrier tray when the uniformity is higher than a preset uniformity.
Optionally, the plurality of detection positions include a plurality of center detection points and an outer ring detection point arranged around the plurality of center detection points.
Optionally, the plurality of center detection points include a center detection point located at the center of the substrate and an inner circle detection point disposed around the center detection point.
Optionally, the number of the inner ring detection points is 4, the number of the outer ring detection points is 4, and the 4 inner ring detection points and the 4 outer ring detection points are distributed at equal intervals along the circumferential direction and are staggered in the radial direction.
Optionally, the control device is specifically configured to:
when the thickness uniformity of the substrate is higher than the preset uniformity and the average thickness of the substrate at the center detection point is lower than the average thickness of the substrate at the outer ring detection point, controlling the bearing disc lifting device to reduce the height of the bearing disc;
and when the thickness uniformity of the substrate is higher than the preset uniformity and the average thickness of the substrate at the center detection point is higher than the average thickness of the substrate at the outer ring detection point, controlling the bearing disc lifting device to lift the height of the bearing disc.
Optionally, the control device is configured to obtain the uniformity of the substrate thickness according to the variance and the mean of the substrate thickness at the plurality of detection positions.
Optionally, the thickness detection apparatus includes an optical signal emitter and an optical detector, both of which are disposed on a sidewall of the process chamber, the optical signal emitter is configured to emit the detection optical signal to a plurality of detection positions of the substrate on the carrier tray, and the optical detector is configured to receive the reflected optical signals of the plurality of detection positions and determine a thickness of the substrate at each of the detection positions according to the reflected optical signals;
the optical signal emitter and the optical detector are respectively arranged on two sides of the process chamber, and the heights of the optical signal emitter and the optical detector are consistent.
Optionally, an emitting hole and a receiving hole are formed on the sidewall of the process chamber, the optical signal emitter emits the detection optical signal through the emitting hole, and the optical detector receives the reflected optical signal through the receiving hole.
Optionally, the aperture of each of the emitting hole and the receiving hole is greater than or equal to 3cm and smaller than 5cm, and the aperture of each of the emitting hole and the receiving hole gradually increases along the direction of entering the process chamber.
Optionally, the inspection optical signal is polarized light, and the thickness detection device is configured to determine the thickness of the substrate at each of the inspection locations based on the wavelength, the horizontal component, and the vertical component of the inspection optical signal, and the horizontal component and the vertical component of the reflected optical signal.
In the semiconductor process equipment provided by the invention, the control device can monitor the thickness of the substrate at a plurality of detection positions in real time through the detection result of the thickness detection device, judge whether the uniformity of the thickness of the substrate meets the requirement, and adjust the height of the bearing plate through the bearing plate lifting device in time when the uniformity of the thickness of the substrate is poor, so that the variation trend of the deposition rate of the film layer on the surface of the substrate along the radial direction is changed, the uniformity of the film layer on the surface of the substrate is further improved, and the requirement of a future 5G device on high uniformity is met.
In addition, the semiconductor process equipment provided by the invention can adjust the uniformity of the film layer on the surface of the substrate in real time in the sputtering process, and compared with the existing scheme that the uniformity of the film can be measured after the sputtering is finished, the yield of the product is greatly improved, and the production cost is saved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of the distribution of monitoring points of a thickness measuring device in semiconductor processing equipment according to an embodiment of the present invention;
FIG. 3 is a schematic view of a semiconductor process performed by the semiconductor processing apparatus according to the embodiment of the present invention when the target and the substrate are close to each other;
FIG. 4 is a schematic view showing a variation tendency of the thickness of the substrate in the radial direction after completion of the semiconductor process in the case shown in FIG. 3;
FIG. 5 is a schematic view of a semiconductor process performed by the semiconductor processing apparatus according to the embodiment of the present invention when the target and the substrate are far apart from each other;
fig. 6 is a schematic view showing a variation in thickness of a substrate in a radial direction after completion of a semiconductor process in the case shown in fig. 5.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In order to solve the above technical problem, the present invention provides a semiconductor processing apparatus, as shown in fig. 1, the semiconductor processing apparatus includes a process chamber 1 and a carrier tray 8 disposed in the process chamber 1, the semiconductor processing apparatus further includes a thickness detection device, a carrier tray lifting device 103, and a control device 102, the thickness detection device is configured to send a detection light signal to a plurality of detection positions of a substrate 9 on the carrier tray 8 and receive a reflected light signal of the plurality of detection positions, and determine thicknesses of the substrate 9 (wafer) at the plurality of detection positions according to the reflected light signal, the control device 102 is configured to determine a uniformity B1 of the thickness of the substrate 9 according to the thicknesses of the substrate 9 at the plurality of detection positions, and control the carrier tray lifting device 103 to adjust a height of the carrier tray 8 when the uniformity B1 of the thickness of the substrate 9 is higher than a preset uniformity B2.
The inventors of the present invention have found in their research that the radial trend of the thickness of the substrate 9 is closely related to the distance between the substrate 9 and the sputtering target at the top of the process chamber. During sputtering, ar + ions bombard the target material, atoms on the surface of the target material escape, and the escape direction is disordered. As shown in fig. 3 to 4, when the distance between the target and the substrate 9 is closer, more particles fall on the edge of the substrate 9, resulting in a thicker film at the edge and thinner in the middle; conversely, as shown in fig. 5-6, when the target is farther away from the substrate 9, fewer atoms fall on the edge of the substrate 9, resulting in a thinner film at the edge and a thicker film in the middle.
Therefore, in the semiconductor process equipment provided by the invention, the control device 102 monitors the thickness of the substrate 9 at a plurality of detection positions in real time through the detection result of the thickness detection device, judges whether the uniformity of the thickness of the substrate 9 meets the requirement, and adjusts the height of the bearing disc 8 through the bearing disc lifting device 103 in time when the uniformity of the thickness of the substrate 9 is poor, so that the variation trend of the deposition rate of the surface film layer of the substrate 9 along the radial direction is changed, the uniformity of the surface film layer of the substrate 9 is further improved, and the requirement of a future 5G device on high uniformity is met.
In addition, the semiconductor process equipment provided by the invention can adjust the uniformity of the film layer on the surface of the substrate 9 in real time in the sputtering process, and compared with the existing scheme that the uniformity of the film can be measured only after the sputtering is finished, the yield of the product is greatly improved, and the production cost is saved.
The structure of the carrier tray lifting device 103 is not particularly limited in the embodiment of the present invention, for example, as an optional implementation manner of the present invention, the carrier tray lifting device 103 may include a lifting motor, the total step length of the motor may be set to 100000, 1mm per 1000 steps, and the total adjustment space is 10cm.
The embodiment of the present invention does not specifically limit how the thickness detection device determines the thickness of the substrate 9 at each detection position according to the reflected light signal, for example, as an optional implementation manner of the present invention, the detection light signal is polarized light (laser light), and after the polarized light is reflected by the thin film on the surface of the substrate 9, the polarization state (horizontal component and vertical component of the polarized light) changes, so that the thickness of the thin film at the position can be determined according to the polarization state of the reflected light signal.
For example, as an alternative embodiment of the present invention, the thickness detection means may be used to determine the thickness D of the substrate 9 at each of the detection positions based on the wavelength, the horizontal component, the vertical component of the detection optical signal, and the horizontal component and the vertical component of the reflected optical signal, specifically:
the thickness detection means may calculate D = λ tan (S2-S1) E j(P2-P1) Determining the thickness of the substrate 9 at each sensing location, wherein S1 is the horizontal component of the sensing optical signal, P1 is the vertical component of the sensing optical signal, S2 is the horizontal component of the reflected optical signal, P2 is the vertical component of the reflected optical signal, λ is the wavelength of the sensing optical signal, E j Maxwell's equations.
In order to accurately judge the variation tendency of the thickness of the substrate 9 in the radial direction, it is preferable that the plurality of detection positions include a plurality of center detection points a1 to a5 and outer circle detection points a6 to a9 arranged around the plurality of center detection points, as shown in fig. 2. When the control device 102 determines that the uniformity of the thickness of the substrate 9 is poor, the magnitude relationship between the center detection points a1 to a5 and the outer ring detection points a6 to a9 can be quickly compared. If the thickness value of the substrate 9 at the outer circle detection points a6 to a9 is smaller than the thickness value at the center detection points a1 to a5, the distance between the target and the substrate 9 is relatively long, the substrate 9 needs to move upwards, and the distance between the target and the substrate is reduced; if the thickness value of the substrate 9 at the outer circle detection points a6 to a9 is larger than that at the center detection points a1 to a5, it indicates that the distance between the target and the substrate 9 is relatively short, the substrate 9 needs to move downwards, and the distance between the target and the substrate is increased, specifically:
the control device 102 is used for controlling the bearing disc lifting device 103 to reduce the height of the bearing disc 8 when the thickness uniformity of the substrate 9 is higher than the preset uniformity B2, and the average thickness of the substrate 9 at the center detection points a1 to a5 is lower than the average thickness of the substrate 9 at the outer circle detection points a6 to a 9;
when the uniformity of the thickness of the substrate 9 is higher than the preset uniformity B2, and the average thickness of the substrate 9 at the center detection points a1 to a5 is higher than the average thickness of the substrate 9 at the outer circle detection points a6 to a9, the height of the bearing disc 8 is controlled to be raised by the bearing disc lifting device 103.
For example, as an optional implementation manner of the present invention, as shown in fig. 2, the plurality of center detection points may include a center detection point a1 located at the center of the substrate 9 and inner circle detection points (a 2 to a 5) disposed around the center detection point, where a circular path where the inner circle detection points (a 2 to a 5) are located and a circular path where the outer circle detection points (a 6 to a 9) are located are concentric circles.
For example, as an optional implementation manner of the present invention, as shown in fig. 2, the number of the inner ring detection points and the number of the outer ring detection points are 4 (a 2 to a 5), the number of the outer ring detection points is 4 (a 6 to a 9), and the 4 inner ring detection points (a 2 to a 5) and the 4 outer ring detection points (a 6 to a 9) are all distributed at equal intervals along the circumferential direction and are radially staggered.
It should be noted that, in the present invention, the uniformity is a value for reflecting the thickness uniformity of the substrate 9, and the embodiment of the present invention does not specifically limit how the control device 102 obtains the uniformity of the thickness of the substrate 9, for example, as an alternative embodiment of the present invention, the control device 102 may obtain the uniformity of the thickness of the substrate 9 according to the variance and the average of the thicknesses of the substrate 9 at the plurality of detection positions, specifically:
the controller 102 may calculate the uniformity B1 according to the formula B1= Standard/Average, where Standard is the variance of the thickness of the substrate 9 at the plurality of detection positions and Average is the arithmetic Average of the thicknesses of the substrate 9 at the plurality of detection positions.
For example, when there are 9 detection positions a1 to a9, the variance Standard of the thickness of the substrate 9 at the plurality of detection positions = sqrt (((a 1-a) 2+ (a 2-a) 2+ · 2.· a 9-a) 2)/9), wherein the arithmetic average a = (a 1+ a2+ a3+ \ 8230a 9)/9 of the thickness of the substrate 9 at the plurality of detection positions, and the uniformity B1 of the thickness of the substrate 9 = sqrt (((a 1-a) ^2+ (a 2-a) ^2+. A9-a. (a 9-a) ^ 2)/9)/a (where a1 to a9 represent the thickness values measured at the 9 detection positions a1 to a 9).
The embodiment of the present invention does not specifically limit the magnitude of the preset uniformity B2, for example, B2=1% may be set in the upper computer, and the control device 102 compares the values of B1 and B2, if B1 is not greater than B2, it indicates that the sputtering process meets the requirement, the current sputtering condition is kept unchanged, and if B1 is greater than B2, it indicates that the uniformity is poor, and the position of the substrate 9 needs to be adjusted.
The structure of the thickness detection apparatus is not particularly limited in the embodiments of the present invention, for example, to improve the semiconductor process effect, preferably, as shown in fig. 1, the thickness detection apparatus may include an optical signal transmitter 100 and an optical detector 101, where the optical signal transmitter 100 and the optical detector 101 are both disposed on a sidewall of the process chamber 1, the optical signal transmitter 100 is configured to transmit detection optical signals to a plurality of detection positions of the substrate 9 on the carrier tray 8, and the optical detector 101 is configured to receive reflected optical signals from the plurality of detection positions and determine the film thickness at the position according to the polarization state of the reflected optical signals. The optical signal emitter 100 and the optical detector 101 are respectively arranged at two sides of the process chamber 1, and the heights of the optical signal emitter 100 and the optical detector 101 are consistent.
In the embodiment of the present invention, the optical signal emitter 100 and the optical detector 101 are both disposed on the sidewall of the process chamber 1, so as to avoid affecting the electromagnetic field generated by the upper electrode and the uniformity of the plasma distribution formed in the process chamber, thereby improving the semiconductor process effect and further improving the uniformity of the thin film.
The structure and parameters of the optical signal transmitter 100 in the embodiment of the present invention are not particularly limited, for example, as an optional implementation manner of the present invention, the optical signal transmitter 100 may be a laser light source, and may emit tunable light waves with a wavelength of 100nm to 3um, and different wavelengths may be set for different materials.
In order to further improve the semiconductor process effect, it is preferable that, as shown in fig. 1, an emission hole through which the optical signal emitter 100 emits the detection optical signal and a reception hole through which the optical detector 101 receives the reflected optical signal are formed on the sidewall of the process chamber 1.
The positions of the emitting holes and the receiving holes are not particularly limited in the embodiments of the present invention, and for example, the emitting holes and the receiving holes may be disposed as close as possible, for example, at a distance of 0 to 20cm from the upper edge of the sidewall.
The positions of the emitting hole and the receiving hole are not particularly limited in the embodiments of the present invention, for example, in order to facilitate the thickness detection device to emit and receive light, it is preferable that the apertures of the emitting hole and the receiving hole are both equal to or larger than 3cm and smaller than 5cm, and the apertures of the emitting hole and the receiving hole are both gradually increased in the direction of entering the process chamber 1.
For example, as shown in fig. 1, an upper cover 2 made of an insulating material is disposed on the top of the process chamber 1, a space between the target 4 and the cavity of the upper cover 2 is filled with deionized water 3, and during sputtering, the DC/RF power supply 6 applies a bias voltage to the target 4 through the emitter 5, so that the bias voltage becomes negative with respect to the grounded cavity, so that the argon gas in the process chamber 1 is discharged to generate plasma, and the positively charged argon ions are attracted to the negatively biased target 4. When the energy of the argon ions is high enough, atoms on the target surface are sputtered out and finally deposited on the surface of the substrate 9 to form the required film.
It will be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present invention, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. The semiconductor processing equipment is characterized by further comprising a thickness detection device, a bearing plate lifting device and a control device, wherein the thickness detection device is used for sending detection optical signals to a plurality of detection positions of a substrate on the bearing plate, receiving reflected optical signals of the detection positions and determining the thickness of the substrate at the detection positions according to the reflected optical signals, the control device is used for determining the uniformity of the thickness of the substrate according to the thickness of the substrate at the detection positions, and when the uniformity is higher than a preset uniformity, the bearing plate lifting device is controlled to adjust the height of the bearing plate.
2. The semiconductor processing apparatus of claim 1, wherein the plurality of inspection locations comprises a plurality of center inspection points and an outer ring of inspection points disposed around the plurality of center inspection points.
3. The semiconductor processing apparatus of claim 2, wherein the plurality of center detection points include a center detection point located at a center of the substrate and an inner circle detection point located around the center detection point.
4. The semiconductor processing apparatus according to claim 3, wherein the number of the inner ring detection points is 4, the number of the outer ring detection points is 4, and the 4 inner ring detection points and the 4 outer ring detection points are all equally spaced and radially staggered in the circumferential direction.
5. The semiconductor processing equipment of claim 2, wherein the control device is specifically configured to:
when the thickness uniformity of the substrate is higher than the preset uniformity and the average thickness of the substrate at the center detection point is lower than the average thickness of the substrate at the outer ring detection point, controlling the bearing disc lifting device to reduce the height of the bearing disc;
and when the thickness uniformity of the substrate is higher than the preset uniformity and the average thickness of the substrate at the center detection point is higher than the average thickness of the substrate at the outer ring detection point, controlling the bearing disc lifting device to lift the height of the bearing disc.
6. The semiconductor processing apparatus of any of claims 1 to 5, wherein the control device is configured to derive a uniformity of substrate thickness based on a variance and a mean of thicknesses of the substrate at the plurality of inspection locations.
7. The semiconductor processing apparatus according to any one of claims 1 to 5, wherein the thickness detecting device comprises an optical signal emitter and an optical detector, the optical signal emitter and the optical detector are disposed on a sidewall of the process chamber, the optical signal emitter is configured to emit the detected optical signal to a plurality of detection positions of the substrate on the carrier tray, and the optical detector is configured to receive the reflected optical signals from the plurality of detection positions and determine a thickness of the substrate at each of the detection positions according to the reflected optical signal;
the optical signal emitter and the optical detector are respectively arranged on two sides of the process chamber, and the heights of the optical signal emitter and the optical detector are consistent.
8. The semiconductor processing apparatus of claim 7, wherein the sidewall of the process chamber has an emission aperture through which the optical signal emitter emits the detected optical signal and a reception aperture through which the optical detector receives the reflected optical signal.
9. The semiconductor processing apparatus of claim 8, wherein the apertures of the emitter and receiver holes are each greater than or equal to 3cm and less than 5cm, and the apertures of the emitter and receiver holes are each gradually increased in a direction into the process chamber.
10. The semiconductor processing apparatus of claim 7, wherein the inspection optical signal is polarized light and the thickness detection device is configured to determine the thickness of the substrate at each of the inspection locations based on the wavelength, horizontal component, vertical component of the inspection optical signal and the horizontal and vertical components of the reflected optical signal.
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US6547939B2 (en) * 2001-03-29 2003-04-15 Super Light Wave Corp. Adjustable shadow mask for improving uniformity of film deposition using multiple monitoring points along radius of substrate
JP2003082462A (en) * 2001-09-11 2003-03-19 Optorun Co Ltd Vacuum film deposition system
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
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