CN112794279A - Artificial synapse device and method for manufacturing artificial synapse device - Google Patents
Artificial synapse device and method for manufacturing artificial synapse device Download PDFInfo
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Abstract
The invention discloses an artificial synapse device and a preparation method thereof, wherein the artificial synapse device comprises: a flexible substrate; a pair of electrodes disposed opposite to each other in a plane parallel to the flexible substrate; the resistance change layer comprises a first sublayer and a second sublayer which are arranged in sequence; the first sub-layer covers partial areas of the two electrodes respectively, and the vertical projection of the second sub-layer on the flexible substrate is superposed with the vertical projection of the first sub-layer on the flexible substrate; wherein the first sub-layer comprises a two-dimensional material or a one-dimensional material and the second sub-layer comprises a polymer electrolyte material of ionic conductivity type; the ion species, ion concentration and mobility of the second sub-layer can be regulated. The technical scheme provided by the embodiment of the invention can better simulate the working mechanism of biological synapses, and can simulate different ions, biological ligands and the like in organisms by regulating and controlling the second sublayer; the first sublayer can also simulate the function of biological receptors in cell membranes, and realize bionic design from the perspective of synaptic working mechanisms.
Description
Technical Field
The embodiment of the invention relates to the technical field of bionic artificial synapse devices and quasi-biological sensing systems, in particular to an artificial synapse device and a preparation method of the artificial synapse device.
Background
The development of artificial intelligence technology brings revolutionary changes to human-computer interaction, a sensing system, control of a robot artificial limb and the like, and simultaneously, new requirements on complex data processing and a human-computer interaction interface are provided. Different from the current neural network realized based on a software system and a von Neumann framework, the human brain operation mode has the characteristics of high efficiency and low power consumption. Therefore, the neural mimicry device for simulating the human brain on the hardware level has important significance for constructing a new operation system. In addition, the nerve mimicry device can convert the sensor digital signal into a nerve analog signal, is hopeful to realize the compatibility with biological nerve signals, and constructs an intelligent and efficient human-computer interaction interface. Therefore, neuromorphic devices have been extensively studied, and their related materials, fabrication processes, and device structures have been continuously optimized.
The structure and working mechanism of memristors similar to biological synapses have attracted extensive attention in recent years in the field of (biomimetic) artificial synapses. The connection strength of neurons in an organism can be modulated by changes in synaptic weights, Na+、Ca2+And K+Plays an important role in the regulation of synaptic weights and the transmission of synaptic signals, each neuron being approximately 10 f from the surroundings3The synapses are interrelated, and therefore, the simulation of the biological nervous system is very complex and difficult to reach the ideal state.
Disclosure of Invention
The embodiment of the invention provides an artificial synapse device and a preparation method thereof, which can better simulate the working mechanism of biological synapse, and can simulate different ions, biological ligands and the like in organisms by regulating and controlling a second sublayer; the first sublayer can also simulate the function of biological receptors in cell membranes, and realize bionic design from the perspective of synaptic working mechanisms.
The embodiment of the invention provides an artificial synapse device, comprising:
a flexible substrate;
the two electrodes are arranged on one side of the flexible substrate and are oppositely arranged in a plane parallel to the flexible substrate;
the resistance change layer comprises a first sublayer and a second sublayer, and the first sublayer is positioned on one side, close to the flexible substrate, of the second sublayer; the first sub-layers respectively cover partial areas of the two electrodes, and the vertical projection of the second sub-layers on the flexible substrate is superposed with the vertical projection of the first sub-layers on the flexible substrate;
wherein the first sublayer comprises a two-dimensional material or a one-dimensional material and the second sublayer comprises a polymer electrolyte material of ionic conductivity type; the ion species, ion concentration and mobility of the second sub-layer can be regulated and controlled.
In one embodiment, the first sublayer comprises surface functional groups and surface defects;
the surface functional groups are regulated by a chemical method, and the surface defects are regulated by a physical method.
In an embodiment, the second sublayer further comprises a dopant species, a plasticizer, and nanoparticles;
the ion species is determined by the species of the dopant species; the ion concentration and the mobility are regulated by the doping concentration of the plasticizer and the nanoparticles.
In one embodiment, the thickness of the electrode is 40nm-150 nm.
In one embodiment, the flexible substrate surface is treated by plasma interface treatment or ultraviolet hydrophilic treatment.
In one embodiment, the material of the flexible substrate comprises a polymer material or a biomaterial having flexibility and biocompatibility.
In one embodiment, the flexible substrate has a thickness of 10 μm to 20 μm.
The embodiment of the invention also provides application of any artificial synapse device in a quasi-neural mimicry device, a neural network algorithm basic unit device and an intelligent bionic perception system.
The embodiment of the invention also provides a preparation method of the artificial synapse device, which is used for forming any one of the artificial synapse devices, and the preparation method comprises the following steps:
providing a hard substrate;
forming a flexible substrate on one side of the hard substrate;
forming the electrode on the side of the flexible substrate facing away from the hard substrate;
forming the first sub-layer on a side of the electrode facing away from the flexible substrate;
forming the second sub-layer on a side of the first sub-layer facing away from the flexible substrate;
separating the flexible substrate from the rigid substrate.
In an embodiment, before forming the electrode on the side of the flexible substrate facing away from the hard substrate, the method further comprises:
carrying out plasma interface treatment on the surface of the flexible substrate;
after the electrode is formed on the side of the flexible substrate facing away from the hard substrate and before the first sub-layer is formed on the side of the electrode facing away from the flexible substrate, the method further comprises the following steps:
carrying out plasma hydrophilic treatment or ultraviolet hydrophilic treatment on the surface of the flexible substrate;
after the first sub-layer is formed on the side of the electrode facing away from the flexible substrate and before the second sub-layer is formed on the side of the first sub-layer facing away from the flexible substrate, the method further comprises the following steps:
and regulating and controlling the surface functional groups of the first sublayer by adopting a chemical method, and regulating and controlling the surface defects of the first sublayer by adopting a physical method.
The artificial synapse device provided by the embodiment of the invention is provided with a flexible substrate; the two electrodes are arranged on one side of the flexible substrate and are oppositely arranged in a plane parallel to the flexible substrate; the resistance change layer comprises a first sublayer and a second sublayer, wherein the first sublayer is positioned on one side, close to the flexible substrate, of the second sublayer; the first sub-layer covers partial areas of the two electrodes respectively, and the vertical projection of the second sub-layer on the flexible substrate is superposed with the vertical projection of the first sub-layer on the flexible substrate; wherein the first sub-layer comprises a two-dimensional material or a one-dimensional material and the second sub-layer comprises a polymer electrolyte material of ionic conductivity type; the ion species, ion concentration and mobility of the second sublayer can be regulated and controlled; therefore, the working mechanism of biological synapse can be well simulated, and different ions, biological ligands and the like in organisms can be simulated through regulating the second sublayer; the first sublayer can also simulate the function of biological receptors in cell membranes, and further realize bionic design from the perspective of synaptic working mechanisms.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the technical solutions in the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an artificial synapse device according to an embodiment of the invention;
FIG. 2 is a graph of current-voltage characteristics of a memristor in an artificial synapse device as provided by embodiments of the present disclosure;
FIG. 3 is a schematic diagram illustrating the response of a memristor in an artificial synapse device to simulate a post-synaptic signal under a pulsed stimulus according to an embodiment of the present disclosure;
FIG. 4 is a flow chart illustrating a method for fabricating an artificial synapse device in accordance with an embodiment of the invention;
FIG. 5 is a flow chart illustrating a method for fabricating an artificial synapse device in accordance with an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures. The described embodiments are only a part of the embodiments of the present invention, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
In the related art, the simulation of the neurosynaptic function by utilizing the structural similarity of the memristor is a simple and effective method, and can realize partial basic biological synapse behaviors such as short-term plasticity, long-term plasticity and the like at present, but deep mechanisms still need to be excavated so as to understand and simulate the neurosynaptic working principle from the working mechanism, improve the device properties in the aspects of stability, energy consumption and the like, and enable the brain-like cognitive intelligence to be realized.
The embodiment of the invention provides a flexible artificial synapse device based on a double-layer structure resistance change layer memristor and a preparation method thereof. The artificial synapse device is a planar structure, and specifically comprises: the device comprises a flexible substrate, a pair of electrodes and a resistance change layer, wherein the pair of electrodes are positioned on one side of the flexible substrate and are oppositely arranged on the same plane; the flexible substrate is a polymer film such as polyimide and the like; the electrode material consists of an adhesion layer and an inert electrode, such as Ti/Au and the like; the first sub-layer (i.e., the lower layer) of the resistive layer of the double-layer structure is a functionalized two-dimensional material or a one-dimensional material, and the second sub-layer (i.e., the upper layer) of the resistive layer of the double-layer structure is a polymer electrolyte material of an ion conductive type. According to the embodiment of the invention, the simulation of the neurosynaptic functions including short-term plasticity, long-term plasticity and the like is realized by adjusting the surface functional groups and defects of the lower-layer material of the resistive layer with the double-layer structure and the ion species, concentration, mobility and the like of the upper-layer material; specifically, different kinds of ions, biological ligands and the like in an organism can be simulated through regulating the second sublayer; the first sublayer can also simulate the function of biological receptors in cell membranes, thereby being beneficial to realizing the bionic design of the artificial synapse device from the perspective of a synapse working mechanism.
Referring to FIG. 1, the artificial synapse device 10 (also referred to herein simply as "device") comprises: a flexible substrate 110; two electrodes 120 disposed on one side of the flexible substrate 110 and disposed opposite to each other in a plane parallel to the flexible substrate 110; the resistance change layer 130 comprises a first sublayer 131 and a second sublayer 132, wherein the first sublayer 131 is positioned on one side of the second sublayer 132 close to the flexible substrate 110; the first sub-layers 131 respectively cover partial areas of the two electrodes 120, and a vertical projection of the second sub-layers 132 on the flexible substrate 110 is overlapped with a vertical projection of the first sub-layers 131 on the flexible substrate 110; wherein the first sub-layer 131 comprises a two-dimensional material or a one-dimensional material, and the second sub-layer 132 comprises a polymer electrolyte material of an ionic conductivity type; the ion species, ion concentration and mobility of the second sub-layer 132 can be controlled.
Wherein the artificial synapse device 10 is formed as a flexible artificial synapse device based on a two-layer structure resistive layer memristor. The lower layer material of the resistance change layer is a functionalized two-dimensional material or a functionalized one-dimensional material; illustratively, the two-dimensional material may include graphene or transition metal sulfide, and the number of layers of the functionalized two-dimensional material may be 3 to 10; the one-dimensional material may comprise carbon nanotubes. The material of the upper layer of the resistive layer is a polymer electrolyte material with ion conduction type, wherein the change of the ion type, concentration and mobility can simulate the change of synaptic weight and the change of transmission path of synaptic signals in the connection relation of neurons in a living body.
Thus, the artificial synapse device 10 provided by the embodiment of the invention can be used to better simulate the working mechanism of biological synapses, and by controlling the second sublayer 132, different types of ions, biological ligands, etc. in an organism can be simulated; the first sublayer 131 can also simulate the function of biological receptors in cell membranes, and further realize bionic design from the perspective of synaptic working mechanisms.
In one embodiment, the first sublayer 131 includes surface functional groups and surface defects; the surface functional groups are regulated by a chemical method, and the surface defects are regulated by a physical method.
Thus, by regulating and controlling the surface energy clusters and the surface defects, simulation of different states of the biological receptors in the cell membrane can be realized, namely, simulation of functions of the biological receptors in the cell membrane can be realized by regulating and controlling the surface of the first sublayer 131.
Illustratively, the chemical process may include any chemical process known to those skilled in the art, such as chemical redox; the physical means may include any physical means known to those skilled in the art such as ultraviolet light irradiation, electron beam irradiation, and the like.
In one embodiment, the second sub-layer 132 further includes a dopant species, a plasticizer, and nanoparticles; the ion species is determined by the species of the dopant species; the ion concentration and mobility are regulated by the plasticizer and the doping concentration of the nanoparticles.
For example, the ion conductive polymer electrolyte material may include chitosan, polyethylene oxide, polyvinyl alcohol (PVA), or other types of ion conductive polymer electrolytes known to those skilled in the art; the dopant species may include lithium (Li)+) Salt, sodium (Na)+) Salts or other metal salts known to those skilled in the art.
Plasticizers are additives for polymer materials, which are widely used in industrial production, and are also called plasticizers. Any substance added to a polymeric material that increases the plasticity of the polymer is called a plasticizer. The plasticizer can improve the performance of the high polymer material, reduce the production cost and improve the production benefit.
The nano particles, also called nano dust and nano dust, refer to nano-scale microscopic particles. It is defined as particles smaller than 100 nm in at least one dimension. Semiconductor nanoparticles smaller than 10nm are also called quantum dots due to their electronic energy level quantization.
Exemplary plasticizers may be Ethylene Carbonate (EC) or Polymethylmethacrylate (PMMA); the nanoparticles may comprise nano-titanium dioxide (TiO)2) Particulate or nano nickel dioxide (NiO)2) And (3) granules.
In other embodiments, the plasticizer and the nanoparticles may be any plasticizer or nanoparticle material known to those skilled in the art, and the description of the embodiment of the present invention is omitted here and is not limited thereto.
The regulation and control of the ion species in the polymer electrolyte material can be realized by changing the species of metal ions in the metal salt; by changing the doping of the plasticizer and the nanoparticles, the ion concentration and the mobility can be regulated and controlled. Furthermore, ions in the artificial synapse device 10 can be used for simulating an ion action mechanism in an organism, so that a bionic function of the device is realized, and the performance of the device is improved.
In one embodiment, the thickness of the electrode 120 is 40nm-150 nm.
Wherein, the electrode may be composed of an adhesion layer and an inert metal material layer, and the material layer is located on one side of the inert metal material layer close to the flexible substrate 110. Illustratively, the material of the adhesion layer may be titanium (Ti), chromium (Cr), nickel (Ni), or other conductive materials with good adhesion known to those skilled in the art; the material of the inert metal material layer may be gold (Au), platinum (Pt), or other inert metal materials known to those skilled in the art. Thus, the electrode 120 can be ensured to be well attached to the flexible substrate 110, and the electrode 120 can be ensured to have good conductivity.
Wherein, by setting the thickness of the electrode 120 within the above range, the electrode 120 can be ensured to have a good adhesion and a good conductivity.
Illustratively, the thickness of the electrode 120 may also range from 40nm to 60 nm; when the thickness of the electrode 120 is 60nm, the thickness of the adhesion layer may be 10nm, and the thickness of the inert metal material layer may be 50 nm.
In other embodiments, the thicknesses of the electrode 120 and the adhesion layer and the inert metal layer therein may also be set according to the practical requirements of the memristor and the artificial synapse device 10 based on the memristor, which is not limited by the embodiments of the present invention.
In the above embodiments, the interface between the layers may also be controlled in order to ensure the stability of the interface and the adhesion of the materials of the layers.
In one embodiment, the surface of the flexible substrate 110 is treated with plasma interface or UV hydrophilic treatment.
Illustratively, the surface of the flexible substrate 110 is subjected to a plasma interface treatment prior to forming the electrode 120, which is beneficial for enhancing the adhesion between the electrode 120 and the flexible substrate 110. After the electrode 120 is formed and before the first sub-layer 131 is formed, a plasma hydrophilic treatment or an ultraviolet hydrophilic treatment may be performed on the flexible substrate 110 to enhance the hydrophilicity of the surface of the flexible substrate 110, so as to prepare for forming the first sub-layer 131, which is beneficial to enhancing the adhesion between the first sub-layer 131 and the flexible substrate 110.
In other embodiments, the interface treatment may be performed by other methods known to those skilled in the art (e.g., ozone treatment), which may be selected according to the actual requirements of the artificial synapse device 10, and is not limited by the embodiments of the invention.
In one embodiment, the material of the flexible substrate 110 includes a polymer material or a biomaterial having flexibility and biocompatibility.
Illustratively, the flexible substrate 110 may be a Polyimide (PI) film, a Polyethylene terephthalate (PET), a natural biomaterial film, or other flexible stretchable films known to those skilled in the art.
In one embodiment, the thickness of the flexible substrate 110 is 10 μm-20 μm.
So configured, the flexible substrate 110 is not too thin to form other film structures of the artificial synapse device 10, nor too thick to fall off the rigid substrate during processing.
It should be noted that the thickness of the flexible substrate 110 may also be 15 μm, 15 μm-18 μm, or other values or value ranges known to those skilled in the art, and may be set according to the actual requirements of the artificial synapse device 10, which is not limited by the embodiments of the invention.
The flexible artificial synapse device based on the double-layer structure resistance change layer memristor provided by the embodiment of the invention can simulate biological synapse behaviors from a working mechanism, realizes basic biological synapse behaviors such as short-range plasticity, long-range plasticity, pulse time dependent plasticity and the like, and can be applied to the fields of neural network calculation, construction of a bionic sensing system and the like. Specifically, the artificial synapse device based on the double-layer structure resistance change layer memristor provided by the embodiment of the invention can better simulate the working mechanism of biological synapses, and can simulate different ions, biological ligands and the like in organisms by regulating and controlling the upper layer material; the lower layer material also simulates the function of biological receptors in cell membranes, and carries out bionic design from the perspective of a synapse working mechanism. Compared with the traditional memristor which needs high-voltage induction operation, the device has low working voltage, can generate a continuous conductive state and has great advantages for simulating biological nerve signals.
Based on the same inventive concept, embodiments of the present invention further provide a method for manufacturing an artificial synapse device, where the method may be used to form any one of the artificial synapse devices provided in the above embodiments. Therefore, the manufacturing method also has the technical effects of the artificial synapse device in the above embodiments, and the same points can be understood by referring to the above explanation of the artificial synapse device, which is not described in detail below.
For example, referring to fig. 4, the method for manufacturing the artificial synapse device may comprise:
and S310, providing a hard substrate.
Wherein, the hard substrate plays a supporting role and prepares for forming the flexible substrate subsequently. For example, the hard substrate may be a glass substrate or other materials known to those skilled in the art, and the embodiments of the present invention are not described or limited herein.
And S320, forming a flexible substrate on one side of the hard substrate.
The flexible substrate can be formed by spin coating a pre-solution and curing. Illustratively, a polyimide film of suitable viscosity may be spin-coated on the rigid substrate such that the cured polyimide film has a thickness of 10 μm to 20 μm. The "suitable viscosity" in this paragraph means a viscosity that can achieve a thickness of the polyimide film in the range of 10 μm to 20 μm.
And S330, forming an electrode on one side of the flexible substrate, which is far away from the hard substrate.
Illustratively, the electrode may be formed by a physical film-forming method or a chemical film-forming method.
And S340, forming a first sub-layer on the side, away from the flexible substrate, of the electrode.
Illustratively, the first sub-layer may be formed by spraying.
And S350, forming a second sub-layer on the side, away from the flexible substrate, of the first sub-layer.
Illustratively, the second sub-layer may be formed by means of drop coating.
And S360, separating the flexible substrate from the hard substrate.
To this end, a flexible artificial synapse device is formed.
Illustratively, fig. 5 is a further refinement of the manufacturing method shown in fig. 4. Referring to fig. 5, the method for preparing the artificial synapse device may comprise:
and S410, providing a hard substrate.
Illustratively, the hard substrate is a glass substrate
And S420, forming a flexible substrate on one side of the hard substrate.
Illustratively, the thickness of the flexible substrate is 15 μm.
And S430, carrying out plasma interface treatment on the surface of the flexible substrate.
Illustratively, the glass and the flexible substrate formed thereon are treated in an oxygen plasma atmosphere for 2 minutes to improve the bonding force of the metal electrode and the flexible substrate before sputtering the metal in S440.
And S440, forming an electrode on the side, facing away from the hard substrate, of the flexible substrate.
Illustratively, patterned electrodes are fabricated on a flexible substrate by photolithography, sputtering or electron beam evaporation, with Ti/Au thicknesses of 10nm and 50nm, respectively, and a channel length defined between the boundaries of the two oppositely disposed electrodes, i.e., a channel length, of 20 μm.
S450, performing plasma hydrophilic treatment or ultraviolet hydrophilic treatment on the surface of the flexible substrate.
Illustratively, the sample with the patterned electrode was passed through the uv treatment for 10 minutes.
And S460, forming a first sub-layer on the side, away from the flexible substrate, of the electrode.
Illustratively, a functionalized two-dimensional material (e.g., a reduced graphene oxide dispersion) is sprayed onto a surface of a flexible substrate.
S461, regulating and controlling the surface functional groups of the first sublayer by adopting a chemical method, and regulating and controlling the surface defects of the first sublayer by adopting a physical method.
Illustratively, the sample formed after S460 is annealed in an argon (Ar) atmosphere for 1 hour to remove surface moisture, thereby reducing the contact resistance of the two-dimensional nanosheets and the electrode.
Thereafter, the method further comprises the following steps: the active region of the device is determined through photoetching and oxygen plasma etching, namely, the artificial synapse devices based on the memristors are isolated, so that the devices are mutually and electrically insulated.
And S470, forming a second sub-layer on the side, away from the flexible substrate, of the first sub-layer.
Illustratively, the PEO LiClO4(10:1) covering the two-dimensional material channel with acetonitrile solution, wherein the dosage of the solution is about 3 mu L each time; thus, a two-layer structure resistance change layer is formed.
And S480, separating the flexible substrate from the hard substrate.
To this end, a flexible artificial synapse device is formed.
The memristor prepared in the present embodiment is subjected to a direct current I-V test, an electrode at one end is grounded in the test process, and the scanning sequence is as shown in fig. 2, wherein the directions indicated by arrows 1-4 are voltage scanning directions. Illustratively, the device current follows the characteristics of space charge limited current, and furthermore, the mutual transition between short-range plasticity and long-range plasticity can be realized by adjusting the pulse voltage.
Referring to fig. 3, the change in conductance of the device in the pulsed voltage mode is shown. As shown in fig. 3, when the stimulation pulse acts, the conductance of the device spontaneously returns to the original state, the self-recovery process of the device is similar to the short-range plasticity of the synapse in the organism, and the long-term stability of the self-recovery process of the device is similar to the long-range plasticity of the synapse in the organism; this indicates that the memristor in the present embodiment has a function of simulating biological synapses.
On the basis of the above embodiment, any artificial synapse device provided by the embodiments of the invention can be applied to a quasi-neural mimicry device, a neural network algorithm basic unit device, and an intelligent bionic sensing system.
Illustratively, the bionic perception system can be used in the field of medical rehabilitation or the field of life-like human-computer interaction. Those skilled in the art will understand that the bionic sensing system may further include other structural components known to those skilled in the art, and the embodiment of the present invention is not described or limited herein.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. An artificial synapse device, comprising:
a flexible substrate;
the two electrodes are arranged on one side of the flexible substrate and are oppositely arranged in a plane parallel to the flexible substrate;
the resistance change layer comprises a first sublayer and a second sublayer, and the first sublayer is positioned on one side, close to the flexible substrate, of the second sublayer; the first sub-layers respectively cover partial areas of the two electrodes, and the vertical projection of the second sub-layers on the flexible substrate is superposed with the vertical projection of the first sub-layers on the flexible substrate;
wherein the first sublayer comprises a two-dimensional material or a one-dimensional material and the second sublayer comprises a polymer electrolyte material of ionic conductivity type; the ion species, ion concentration and mobility of the second sub-layer can be regulated and controlled.
2. The artificial synapse device of claim 1, wherein: the first sublayer comprises surface functional groups and surface defects;
the surface functional groups are regulated by a chemical method, and the surface defects are regulated by a physical method.
3. The artificial synapse device of claim 1, wherein the second sublayer further comprises a doping substance, a plasticizer, and nanoparticles;
the ion species is determined by the species of the dopant species; the ion concentration and the mobility are regulated by the doping concentration of the plasticizer and the nanoparticles.
4. The artificial synapse device of claim 1, wherein the electrode has a thickness of 40-150 nm.
5. The artificial synapse device of claim 1, wherein the flexible substrate surface is treated with a plasma interface or a uv hydrophilic treatment.
6. The artificial synapse device of claim 1, wherein the material of the flexible substrate comprises a polymer material or a biological material having flexibility and biocompatibility.
7. The artificial synapse device of claim 1, wherein the flexible substrate has a thickness of 10-20 μ ι η.
8. Use of the artificial synapse device of any one of claims 1-7 in neuromorphic devices, neural network algorithm-based cell devices, and intelligent biomimetic perception systems.
9. A method of making an artificial synapse device, for forming an artificial synapse device as claimed in any of claims 1-7; the preparation method comprises the following steps:
providing a hard substrate;
forming a flexible substrate on one side of the hard substrate;
forming the electrode on the side of the flexible substrate facing away from the hard substrate;
forming the first sub-layer on a side of the electrode facing away from the flexible substrate;
forming the second sub-layer on a side of the first sub-layer facing away from the flexible substrate;
separating the flexible substrate from the rigid substrate.
10. The method of claim 9, wherein:
before the electrode is formed on the side of the flexible substrate facing away from the hard substrate, the method further comprises the following steps:
carrying out plasma interface treatment on the surface of the flexible substrate;
after the electrode is formed on the side of the flexible substrate facing away from the hard substrate and before the first sub-layer is formed on the side of the electrode facing away from the flexible substrate, the method further comprises the following steps:
carrying out plasma hydrophilic treatment or ultraviolet hydrophilic treatment on the surface of the flexible substrate;
after the first sub-layer is formed on the side of the electrode facing away from the flexible substrate and before the second sub-layer is formed on the side of the first sub-layer facing away from the flexible substrate, the method further comprises the following steps:
and regulating and controlling the surface functional groups of the first sublayer by adopting a chemical method, and regulating and controlling the surface defects of the first sublayer by adopting a physical method.
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