CN109473548A - The bionical cynapse electronic device in three ends based on P3HT nano wire - Google Patents
The bionical cynapse electronic device in three ends based on P3HT nano wire Download PDFInfo
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- CN109473548A CN109473548A CN201811219439.8A CN201811219439A CN109473548A CN 109473548 A CN109473548 A CN 109473548A CN 201811219439 A CN201811219439 A CN 201811219439A CN 109473548 A CN109473548 A CN 109473548A
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- nano wire
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- cynapse
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Abstract
The present invention provides a kind of bionical cynapse electronic devices in three ends based on P3HT nano wire.The simulation that nerve signal transmits between cynapse is realized by designing the P3HT nano wire nerve synapse bionic device of class field-effect tube structure.By carrying out electrical characterization to the P3HT nano wire cynapse electronic device, it proves the short-term synaptic journey plasticity and part synaptic function that the device has, has great importance in the novel computing system that building has the functions such as pattern-recognition, reasoning from logic, induction and conclusion, autonomous learning.
Description
Technical field
The present invention relates to field of electronic devices, are based particularly on the bionical cynapse electronic device in three ends of P3HT nano wire.
Background technique
The powerful function of human brain is by being formed by connecting by nearly hundred billion neurons by up to a million hundred million nerve synapses
Neural fusion.In this network, cynapse is generally formed in preceding neuron axon and rear neuron cell body or dendron
Between about 20-40nm one wide gap, be connecting portion between each neuron structurally and functionally, be responsible for information storage
And transmitting.By the subject crossing research to Neuscience, physics, chemistry, Materials Science and Engineering etc., scientist is invented
Electronic device with class synaptic plasticity, i.e. artificial synapse.Novel artificial cynapse device is not only likely to become high apery brain meter
A part in calculation machine will also be for emerging fields such as intelligent robot, difficult and complicated illness medical diagnosis, securities trading analyses
There is broad prospect of application by acquisition vision, the sense of hearing, smell and haptic signal come the computer aspect of work, such as unmanned vapour
Vehicle, acoustic control interface, odor identification and artificial skin perception etc..
The development of cynapse bionic starts from the research to two-terminal device.It succeeds in developing, is had from memristor in 2008
More resistance states of standby class cynapse cause the concern of electronics subject.The numerous more mature fields of electronic device also grinding oneself
Study carefully range and is extended to cynapse electronics.Phase transition storage, conductive bridge-type random access memory, resistive formula memory all realize pair
It imitates the part of biological synapse function.But device architecture too simple possessed by two ends, selecting suitable active layer
Material and stimulus signal are arranged often with greatly challenge: 1) prominent in order to read and regulate and control in two distal process touching device system
Plasticity is touched, when operation needs to provide the non-concurrent pulse of read-write of non-class biology.This means that real simultaneously in similar biological synapse
The function of existing signal transmitting and study cannot be implemented in this system.2) in order to realize two end of more resistance states of similar biological synapse
The electrochemistry or macroscopic property that material in cynapse device usually needs to have active.But high activity material can not be kept away
Cause device that there is excessive sensitivity with exempting from, and vulnerable to effect of signals uncontrollable and nonlinear in environment.3) due to two
Two ports of input and output, complicated synaptic function are only existed in end-apparatus part, such as heterogeneous plasticity cannot be implemented.
The development of three distal process tentaculum parts preferably solves the limitation of two distal process tentaculum parts.In recent years to the touching of three distal process
Device research has shown that the field-effect tube structure cynapse electronics at three ends has relatively more controllable test parameter, higher stabilization
Property and the bigger electrode of range of choice, channel layer materials.
Summary of the invention
The present invention is based on three end Artificial neural's cynapse bionics of semiconducting polymer's material P3HT/ ion glue complex
The systematic Study of device progress neurobionics electronic device property relationship.Obtain having having for scientific guidance meaning regular
Conclusion, to this field device material selection with design aspect have important directive significance.
Above-mentioned purpose of the invention is by the preparation of the three terminal nerve bionic devices based on P3HT nano wire come real
Existing.
Technical scheme is as follows:
A kind of bionical cynapse electronic device in three ends based on P3HT nano wire, the nerve synapse bionic device is by grid
Pole, ion glue, semiconductor layer and source/drain composition.
The grid is probe, and electric impulse signal is applied to the ion glue-line by grid, and neuron generates before simulating
Excitatory neuron get excited the process for being spread out of in the form of action potential and reaching presynaptic membrane by the branch of aixs cylinder；Pass through grid
Pole acts on the presynaptic fringe in the electric impulse signal analog neuron cynapse working mechanism of ion glue.
The source electrode and drain electrode are gold, and simulation postsynaptic membrane receives display signal.
The ion glue be mass ratio be 1:7:4 PVDF-HFP, EMIM, acetone mixed solution, the ion glue makees
For the medium of ion transport, simulates synaptic cleft and the space of Ion transfer is provided；The ion that can be migrated rapidly under external influence
The signal that then presynaptic membrane is received to a certain extent transmits, and causes the corresponding current potential of postsynaptic membrane and curent change,
The effect of neurotransmitter is simulated to a certain extent.
The semiconductor layer is P3HT nano wire, and the interaction of the nano wire and the ion glue forms short distance note
Recall or long-range is remembered.
Further, the P3HT nano wire is made by electrostatic spinning technique, be by P3HT mass fraction be 1.5%, PEO
The P3HT chloroformic solution that mass fraction is 1%, setting needle point to parallel pole wire drawing device plane are 11cm, and setting flow velocity is
0.5mL/min, adjusting voltage are 9kV, and P3HT nano wire is made in electrostatic spinning.
Further, the transfer of the P3HT nano wire is located between gold electrode source electrode and drain electrode and perpendicular to electrode direction
It is attached to silicon chip surface.
Further, the short term memory: if of short duration stimulation make after nerve synapse after the enhancing of electric current journey microsecond to
Original levels of current is replied in the time of dry minute, forms short term memory (STM)
Further, ion implanting P3HT semiconducting polymer the long-range memory: can be made.Ion is partly led in macromolecule
Solubility in body is lower, is relatively difficult to diffuse out.Therefore it is able to maintain the chanza of long period, device is made to realize length
Journey remembers (LTM).
Characteristic of the invention is with innovation: 1) breaking through device by substituting common inorganic material with organic semiconductor
Limitation in terms of the material/structure of part, 2) simulation of the realization to human body synaptic function critical function in same device, 3) it utilizes
Organic semiconductor/ion glue complex realizes the research of new device working mechanism and obtains the device with scientific guidance meaning
The conclusion of material selection and design aspect.
The invention has the benefit that by carrying out electrical characterization to designed P3HT nano wire cynapse electronics, it was demonstrated that
Testing resulting device has certain short-term synaptic journey plasticity and part synaptic function, such as SRDP, SVDP.Have broader
Application space, corresponding energy consumption is also relatively low.For realizing the simulation to synaptic function and realizing the low energy being mutually equal to brain
Taking up one's energy has very important meaning through morphology techniques.
Detailed description of the invention
Fig. 1 is the structural schematic diagram based on three terminal nerve cynapse bionic device of P3HT nano wire.
Fig. 2 is that the three terminal nerve cynapse bionic device bionic devices based on P3HT nano wire are grounded in source electrode,
Drain voltage is the short term plasticity under the conditions of 1V.
It is 1V that Fig. 3, which is the three terminal nerve cynapse bionic devices based on P3HT nano wire in source-drain voltage, sets every group
Pulse number is 10, and the time interval controlled between pulse is 10 potential time, changes every group pulse size (respectively
0.2,0.5,1,2,4V) the pulse voltage dependence under the conditions of.
It is 1V that Fig. 4, which is the three terminal nerve cynapse bionic devices based on P3HT nano wire in source-drain voltage, sets every group
Pulse number is 1, and the time interval controlled between pulse is 10 potential time, changes every group pulse size (respectively
0.2,0.5,1,2,4V) the pulse voltage dependence under the conditions of.Source-drain voltage is set as 1V, sets every group pulse number as 10
It is a, control pulse between time interval be 10 potential time, change every group pulse size (respectively 0.2,0.5,1,2,
4V)。
Fig. 5 is -1V and drain voltage in grid voltage based on three terminal nerve cynapse bionic devices of P3HT nano wire
For the long term potentiation performance under the conditions of -1V.It is the three terminal nerve cynapse bionic devices based on P3HT nano wire in source and drain
Voltage is 1V, sets every group pulse number as 1, and the time interval controlled between pulse is 10 potential time, changes every group
Pulse voltage dependence under the conditions of impulse magnitude (respectively 0.2,0.5,1,2,4V).
Specific embodiment:
A specific embodiment of the invention is described in further detail with reference to the accompanying drawing.
As shown in Figure 1, being a kind of biological neural net of the breadboardin based on class PMOS luminescent device provided by the invention
The structural schematic diagram of network, the nerve synapse bionic device by designing class field-effect tube structure exist to nerve signal to realize
The simulation transmitted between cynapse, with SiO2/ Si is substrate, and au film coating is as source-drain electrode, using P3HT nano wire as conducting channel,
Ion glue is made with PVDF-HFP and ionic liquid.The working principle of the neuroelectronic devices are as follows: to act on ion through grid
The electric impulse signal of glue simulates presynaptic fringe (Presynaptic Spikes), neuron before electric impulse signal is simulated by grid
The excitatory neuron impulsion of generation is simultaneously spread out of in the form of action potential, by the branch of aixs cylinder reach presynaptic membrane act on from
Sub- glue-line；Synaptic cleft is simulated with ion glue and P3HT nano wire conducting channel, pulse voltage, which will lead to, is gathered in semiconductor layer
The cation or anion concentration of surrounding change, and form electric double layer, and current strength in semiconductor layer is made to generate variation, effect
It is released neurotransmitter in the action potential of presynaptic membrane, is then combined with postsynaptic membrane epineural member receptor；With leakage
Postsynaptic membrane is simulated in pole, and the opening of ion channel results in the potential change of postsynaptic membrane, so as to complete cynapse signal prominent
Touch the transmittance process in gap.
The preparation of the bionical device of P3HT nano wire cynapse specifically includes that silicon base cleaning and gold electrode vapor deposition, ion
Glue preparation, P3HT nano wire and ion glue shift.
Further, silicon base cleaning is deposited with gold electrode.4 inch silicon wafers are cut to about 20* using silicon wafer knife and tweezers
The square of 20mm size.Silicon chip surface clast is blown away with ear washing bulb or laboratory nitrogen, the silicon wafer cut is placed on Teflon
In imperial frame, acetone ultrasound 15min is immersed.Teflon frame is put to immerse after acetone ultrasound and continues ultrasound 15min in IPA.IPA
After ultrasound, this beaker is placed in heating plate, setting temperature is 350 DEG C, after IPA boiling, is put with tweezers clipping silicon chip
It is placed in beaker mouth, utilizes IPA heat steam cleaning silicon chip surface.Silicon chip surface remnants IPA drop is blown away using nitrogen gun, by silicon wafer
It is placed in sample box.
Further, gold electrode is deposited.Silicon wafer after cleaning is placed on smooth glass plate.50 μ m-thicks are taken out independently to set
Mask is counted, it is entirely bonded and silicon wafer SiO2Surface.PI heat resistant adhesive tape is cut to segment, is attached to mask and silicon wafer circle
Face.The silicon wafer for being bonded mask is arranged in glass plate surface, is fixed with PI heat resistant adhesive tape.Glass plate is inverted into steaming gold
Equipment.
Further, the preparation of ion glue is carried out.Weighed respectively in ultra-clean chamber with prepare PVDF-HFP acetone soln with
EMIM acetone soln, so that mixing latter three mass ratio is 1:7:4.PVDF-HFP acetone soln is set respectively with EMIM acetone soln
Diel is stirred under the conditions of room temperature 400rpm in super-clean environment.After PVDF-HFP dissolution completely, by EMIM acetone soln
It is mixed with PVDF-HFP acetone soln, tightens sample bottle cover, room temperature 400rpm is stirred overnight.Clean glass slide.Rapidly will
PVDF-HFP and EMIM mixed solution drop to clean slide surface.The glass slide that ionic liquid is added dropwise is placed in vacuum to dry
Case opens vacuum pump, vacuumizes 30min.It is 70 DEG C that temperature, which is arranged, continues to vacuumize 30min, closes vacuum pump.It is closed after one night
Vacuum drying oven power supply is closed, it is slow to deflate, it takes out ion glue and is placed on nitrogen glove box preservation or is put into sample box pumping very
Sky saves.
Further, P3HT nano wire is shifted.Parallel pole wire drawing device is collected after obtaining P3HT nano wire, is tipped upside down on
The silicon chip surface of gold electrode is deposited, so that P3HT nano wire is located exactly between gold electrode source electrode and drain electrode.Take dust-free cotton bud
Chlorobenzene is dipped, P3HT nano wire boundary part is carefully wiped, so that P3HT nano wire can hang down after removing parallel pole wire drawing device
Directly silicon chip surface is attached in electrode direction.Use nano wire pattern after the transfer of optical microphotograph sem observation, mark position.
Further, ion glue is shifted.PVDF-HFP ion glue is cut to narrow strip or square shape with blade, uses tweezers
Place it on the source-drain electrode marked that (source-drain electrode needs reserved not in contact with ion Jiao Chu).
Fig. 2 is the simulation to short term plasticity of the three terminal nerve cynapse bionic devices based on P3HT nano wire.
Source electrode is grounded, setting drain voltage is 1V, after device source-drain current is stablized, applies certain stimulation, observes source-drain current
Variation.As shown in Fig. 2, meeting when applying voltage above-mentioned it is assumed that there is inhibition trend, still applying a 1V positive pulse
After removing voltage pulse, source-drain current shows levels of current instead and is higher than the level not plus stimulated.In this cynapse device,
It can prove that ion glue can preferably realize that charged ion carries out transfer under electrical field stimulation and slowly restores, so that device
The phenomenon that showing more resistance states.
Relationship between number of pulses and synaptic plasticity can pass through cynapse number of pulses dependence (SNDP) Lai Hengliang.
It is 1V that Fig. 3, which is the three terminal nerve cynapse bionic devices based on P3HT nano wire in source-drain voltage, sets every group pulse number
Be 10, control pulse between time interval be 10 potential time, change every group pulse size (respectively 0.2,0.5,1,
2,4V) to the imitation of cynapse number of pulses dependence under the conditions of.
For in the characterization experiment of the plasticity of pulse voltage dependence, Fig. 4 is that three terminal nerves based on P3HT nano wire are prominent
It is 1V that bionic device, which is touched, in source-drain voltage, sets every group pulse number as 1, controlling the time interval between pulse is 1
A 0 potential time changes the pulse voltage dependence under the conditions of every group pulse size (respectively 0.2,0.5,1,2,4V).Fig. 5
Then indicate that other conditions are identical, under the conditions of pulse, influence of the impulse magnitude to synaptic plasticity.The data of comprehensive two figures,
For the cynapse of P3HT nano wire for pulse voltage magnitude, the degree of plasticity influence by voltage is far more than linear, institute
With future apply the brain behavior of cynapse electronic die apery when, can also by under higher voltage level trim voltage realize to signal
Screening.
The present invention devise may have biological synapse plasticity with and biological synapse function class field-effect tube structure
Three distal process of P3HT nano wire touches electronic device.By carrying out electrical characterization to designed P3HT nano wire cynapse electronics, it was demonstrated that
Testing resulting device has certain short-term synaptic journey plasticity and part synaptic function, such as SRDP, SVDP.Have broader
Application space, corresponding energy consumption is also relatively low.For realizing the simulation to synaptic function and realizing the low energy being mutually equal to brain
Taking up one's energy has very important meaning through morphology techniques.
Claims (7)
1. a kind of bionical cynapse electronic device in three ends based on P3HT nano wire, the nerve synapse bionic device is by grid
Pole, source/drain, ion glue and semiconductor layer composition.
2. the bionical cynapse electronic device in three ends according to claim 1 based on P3HT nano wire, which is characterized in that described
Grid is probe, and electric impulse signal is applied to the ion glue-line by grid, the excitatory neuron that neuron generates before simulating
It gets excited and is spread out of in the form of action potential and by the process of the branch of aixs cylinder arrival presynaptic membrane；Ion is acted on by grid
Presynaptic fringe in the electric impulse signal analog neuron cynapse working mechanism of glue.
3. the bionical cynapse electronic device in three ends according to claim 1 based on P3HT nano wire, which is characterized in that described
Source electrode and drain electrode are gold, and simulation postsynaptic membrane receives display signal.
4. the bionical cynapse electronic device in three ends according to claim 1 based on P3HT nano wire, which is characterized in that described
Ion glue be mass ratio be 1:7:4 PVDF-HFP, EMIM, acetone mixed solution, the ion glue is as ion transport
Medium, simulation synaptic cleft provide the space of Ion transfer；The ion that can be migrated rapidly under external influence is then to a certain degree
On signal that presynaptic membrane is received transmit, cause the corresponding current potential of postsynaptic membrane and curent change, to a certain extent mould
The effect of neurotransmitter is intended.
5. the bionical cynapse electronic device in three ends according to claim 1 based on P3HT nano wire, which is characterized in that described
Semiconductor layer is P3HT nano wire, and the interaction of the nano wire and the ion glue forms short term memory or long-range memory.
6. the bionical cynapse electronic device in three ends according to claim 5 based on P3HT nano wire, it is characterised in that described
P3HT nano wire is made by electrostatic spinning technique, to be by P3HT mass fraction be P3HT chlorine that 1.5%, PEO mass fraction is 1%
Imitative solution, setting needle point to parallel pole wire drawing device plane are 11cm, and setting flow velocity is 0.5mL/min, and adjusting voltage is 9kV,
P3HT nano wire is made in electrostatic spinning.
7. the bionical cynapse electronic device in three ends according to claim 1 based on P3HT nano wire, it is characterised in that described
The transfer of P3HT nano wire is located between gold electrode source electrode and drain electrode and is attached to silicon chip surface perpendicular to electrode direction.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920912A (en) * | 2019-03-28 | 2019-06-21 | 江苏师范大学 | A kind of bionical device of multi-functional cynapse and preparation method thereof |
| CN110165049A (en) * | 2019-04-26 | 2019-08-23 | 华中科技大学 | It is a kind of based on receive fluid interface type memristor and its preparation and application |
| CN110277496A (en) * | 2019-06-26 | 2019-09-24 | 南开大学 | A kind of three end artificial synapse devices based on P3HT ultrathin membrane |
| CN110736575A (en) * | 2019-10-23 | 2020-01-31 | 中国科学院半导体研究所 | artificial synapse sensors and preparation method thereof |
| CN111430538A (en) * | 2020-03-31 | 2020-07-17 | 清华大学 | Flexible memristor based on weaving type and preparation method thereof |
| CN111564489A (en) * | 2020-05-20 | 2020-08-21 | 北京大学 | Nanowire ion gate control synaptic transistor and preparation method thereof |
| CN112201750A (en) * | 2020-10-09 | 2021-01-08 | 南开大学 | Preparation method of dual-excitability artificial synapse device for simulating biological synapse neurotransmitter multiplexing |
| CN112794279A (en) * | 2019-11-13 | 2021-05-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Artificial synapse device and method for manufacturing artificial synapse device |
| CN113363386A (en) * | 2021-06-04 | 2021-09-07 | 南开大学 | Preparation method of three-terminal three-dimensional artificial synapse electronic device based on P3HT nanowire |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920912A (en) * | 2019-03-28 | 2019-06-21 | 江苏师范大学 | A kind of bionical device of multi-functional cynapse and preparation method thereof |
| CN109920912B (en) * | 2019-03-28 | 2023-02-03 | 江苏师范大学 | Multifunctional synapse bionic device and preparation method thereof |
| CN110165049B (en) * | 2019-04-26 | 2020-12-08 | 华中科技大学 | Interface type memristor based on nanofluid and preparation and application thereof |
| CN110165049A (en) * | 2019-04-26 | 2019-08-23 | 华中科技大学 | It is a kind of based on receive fluid interface type memristor and its preparation and application |
| CN110277496A (en) * | 2019-06-26 | 2019-09-24 | 南开大学 | A kind of three end artificial synapse devices based on P3HT ultrathin membrane |
| CN110736575A (en) * | 2019-10-23 | 2020-01-31 | 中国科学院半导体研究所 | artificial synapse sensors and preparation method thereof |
| CN112794279A (en) * | 2019-11-13 | 2021-05-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Artificial synapse device and method for manufacturing artificial synapse device |
| CN111430538B (en) * | 2020-03-31 | 2022-04-08 | 清华大学 | Flexible memristor based on weaving type and preparation method thereof |
| CN111430538A (en) * | 2020-03-31 | 2020-07-17 | 清华大学 | Flexible memristor based on weaving type and preparation method thereof |
| CN111564489A (en) * | 2020-05-20 | 2020-08-21 | 北京大学 | Nanowire ion gate control synaptic transistor and preparation method thereof |
| CN111564489B (en) * | 2020-05-20 | 2021-03-23 | 北京大学 | Nanowire ion gate control synaptic transistor and preparation method thereof |
| CN112201750A (en) * | 2020-10-09 | 2021-01-08 | 南开大学 | Preparation method of dual-excitability artificial synapse device for simulating biological synapse neurotransmitter multiplexing |
| CN112201750B (en) * | 2020-10-09 | 2023-01-24 | 南开大学 | Preparation method of dual-excitability artificial synapse device for simulating biological synapse neurotransmitter multiplexing |
| CN113363386A (en) * | 2021-06-04 | 2021-09-07 | 南开大学 | Preparation method of three-terminal three-dimensional artificial synapse electronic device based on P3HT nanowire |
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