CN112786767B

CN112786767B - Fluid assembled micron-scale device module and manufacturing method thereof

Info

Publication number: CN112786767B
Application number: CN202110034154.2A
Authority: CN
Inventors: 周玉刚; 贾先韬; 许朝军; 张�荣
Original assignee: Nanjing University
Current assignee: Nanjing University
Priority date: 2021-01-11
Filing date: 2021-01-11
Publication date: 2022-04-22
Anticipated expiration: 2041-01-11
Also published as: CN112786767A

Abstract

The invention discloses a fluid-assembled micron-sized device module and a manufacturing method thereof. The fluid-assembled micron-scale device module comprises a supporting substrate and a micron-scale device, the micron-scale device comprises a micron-scale functional chip and a medium substrate, the micron-scale functional chip comprises an epitaxial structure, a first electrode and a second electrode, the first electrode and the second electrode are respectively arranged on two sides of the epitaxial structure in a back-to-back mode, and the first electrode is electrically connected with the medium substrate; when the micron-scale device is combined with the supporting substrate in a fluid assembly mode, the second electrode of the micron-scale device is directly electrically connected with the circuit wiring layer, and the first electrode is electrically connected with the circuit wiring layer through the intermediate substrate. The invention reduces the size of the micron-sized chip, greatly reduces the cost of the large-scale micron-sized device module, and can select the micron-sized functional chip and the micron-sized device through the preselection test, thereby greatly improving the yield of the large-scale micron-sized device module.

Description

Fluid assembled micron-scale device module and manufacturing method thereof

Technical Field

The invention particularly relates to a micron-sized device module assembled by fluid and a manufacturing method thereof, belonging to the technical field of semiconductors.

Background

The Micro-LED technology is a technology for miniaturizing and arraying Light Emitting Diode (LED) chips, and refers to integrating a high-density Micro-sized LED array on one chip. The Micro-LED display technology is characterized in that a Micro-LED is used as a light emitting unit, a Micro-LED array is manufactured through a massive transfer and/or bonding technology and is integrated with a driving circuit, and the Micro-LED array is independently addressed and lightened, so that single-color or blue, green and Red (RGB) light emitting is realized, and a high-resolution display screen is formed. Compared with other display technologies, the Micro-LED display technology has obvious advantages, and firstly, theoretically, the power consumption of an LED is very low, about 50% of that of an OLED (organic light emitting diode) and 10% of that of an LCD (liquid crystal display); furthermore, the resolution of the Micro-LED can exceed 1500PPI, and the brightness is extremely high and is 30 times higher than that of the OLED; the Micro-LED also has the advantages of high response speed, long service life, high contrast, high color saturation, wide visual angle, no need of a backlight source, self-luminescence and the like, and is considered as a next generation novel display technology after an LCD and an OLED due to the unique excellent performance of the Micro-LED.

However, the Micro-LED needs to be manufactured in mass production, and some technical bottlenecks need to be overcome, wherein the key technical difficulties are that the yield and efficiency of mass transfer are not high, and the production cost of the Micro-LED is far higher than that of its competitors LCD and OLED.

The major routes of mass transfer at present are divided into precision capture, self-assembly, selective release and transfer techniques. The precision gripping technique is classified into electrostatic force, electromagnetic force, and van der waals force according to a medium used in transfer. There is fluidic self-assembly in the self-assembly route. Representative techniques for selective release are laser assisted selective release.

The key technical indexes of mass transfer are yield and transfer speed, accurate capture technology using electrostatic force or electromagnetic force as a medium and laser-assisted selective release can realize accurate capture, and the method has the advantages of high fineness and support of real-time detection and repair, but the transfer speed is relatively low, the accurate capture technology using van der Waals force as a medium and the transfer technology are suitable for large-area transfer of Micro-LEDs, and the production speed is high but is not favorable for subsequent detection and repair. In addition, the relative position relationship of the array devices transferred at a time on the wafer in the massive transfer process is not changed, and because the uniformity and yield of the wafer are problems, a plurality of devices needing to be detected and repaired exist, and the transfer speed is limited.

For example, CN107833525A discloses a fluidic self-assembly process, which is a very potential technology because the total time required for switching a large number of chips is greatly reduced, and the chips are mixed and assembled in the row and column positions on the substrate after being disturbed, so that the bad chips can be tested and removed before mixing, and the repair cost is greatly reduced. In order to further reduce the cost of the micro-LED display to make it competitive with other displays, it is generally considered that the active region of the micro-LED needs to have a diameter or side length of 3-5 microns, so as to fabricate more micro-LED unit devices on a single chip epitaxy. The fluid assembly technique disclosed in CN107833525A is to arrange the two electrodes of the chip on the same side, and since the electrodes themselves need to have a certain size and a certain distance is left between the two electrodes to avoid short circuit, the diameter of the unit chip is still above 15 micrometers and below 5 micrometers. In addition, the chip in the fluid self-assembly usually adopts the substrate stripping process, only remains the epitaxial layer with the typical value of thickness of 3-6 microns, if the diameter of the functional chip is close to the thickness of the functional chip, the functional chip can roll over too easily, the chance of embedding the functional chip into the well on the substrate through the protrusion can be greatly reduced, and the assembly is not facilitated.

Disclosure of Invention

The present invention is directed to a micro-scale device module assembled by a fluid and a method for manufacturing the same, which overcome the disadvantages of the prior art.

In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:

the embodiment of the invention provides a fluid-assembled micron-scale device module, which comprises a supporting substrate and a micron-scale device, wherein the micron-scale device comprises a micron-scale functional chip fixedly connected with an intermediary substrate, the micron-scale functional chip comprises an epitaxial structure, a first electrode and a second electrode, the first electrode and the second electrode are respectively arranged on two opposite sides of the epitaxial structure, and the first electrode is also electrically connected with a conducting layer on the intermediary substrate;

the support substrate is provided with more than one mounting groove and a circuit wiring layer, the circuit wiring layer comprises a first circuit wiring layer and a second circuit wiring layer, each mounting groove at least contains an epitaxial structure of a corresponding micron-scale functional chip, a second electrode of the corresponding micron-scale functional chip is electrically connected with the first circuit wiring layer, and the second circuit wiring layer is electrically connected with a conductive layer on the intermediate substrate.

The embodiment of the invention also provides a manufacturing method of the fluid-assembled micron-sized device module, which comprises the following steps:

the manufacturing method comprises the steps of manufacturing and forming a micron-scale functional chip, manufacturing and forming an intermediate substrate and manufacturing and forming a supporting substrate, wherein the micron-scale functional chip comprises an epitaxial structure, a first electrode and a second electrode which are respectively arranged on two sides of the epitaxial structure in a back-to-back mode, a mounting groove circuit wiring layer is arranged on the supporting substrate, and the circuit wiring layer comprises a first circuit wiring layer and a second circuit wiring layer;

electrically combining the first electrode of the micron-scale functional chip with an intermediate substrate to obtain a micron-scale device;

and assembling the micron-sized device and the supporting substrate by adopting a fluid assembling process, at least accommodating the micron-sized functional chip in the installation groove, and electrically connecting the first electrode with the second circuit wiring layer and the second electrode with the first circuit wiring layer through the intermediate substrate.

Compared with the prior art, the invention has the advantages that:

1) according to the fluid-assembled micron-sized device module, the intermediary substrate is arranged, the two electrodes of the micron-sized functional chip with the vertical structure are arranged on the two sides of the epitaxial structure, and the intermediary substrate and the micron-sized functional chip are combined to form the micron-sized device, so that a large number of micron-sized devices can be quickly transferred to the supporting substrate by adopting a standard fluid self-assembly process, and the problem of size limitation caused by the fact that the two electrodes are arranged on the same side is solved;

2) according to the micron-sized device module assembled by the fluid, the size of the micron-sized functional chip is reduced to 2-10 micrometers, preferably 3-5 micrometers, so that the cost for manufacturing the LED chip is greatly reduced;

3) the intermediate substrate of the fluid-assembled micron-scale device module provided by the embodiment of the invention can be integrated with other functional modules such as color conversion, driving and the like, so that a low-cost scheme can be provided for integrated devices such as full-color display, driving and the like.

Drawings

FIG. 1a is a schematic cross-sectional view of a functional chip with micron scale in embodiment 1 of the present invention;

FIG. 1b is a schematic cross-sectional view of an interposer substrate according to embodiment 1 of the present invention;

fig. 1c is a schematic cross-sectional structure diagram of a micron-scale device formed by connecting a micron-scale functional chip and a dielectric substrate according to embodiment 1 of the present invention;

FIG. 1d is a schematic cross-sectional view of a supporting substrate according to embodiment 1 of the present invention;

fig. 1e is a schematic cross-sectional view of an entire micro device module according to embodiment 1 of the present invention;

FIG. 2a is a bottom view of an interposer substrate according to embodiment 1 of the present invention;

FIG. 2b is a bottom view of a micron-scale device formed by connecting a micron-scale functional chip and a dielectric substrate according to embodiment 1 of the present invention;

FIG. 2c is a top view of a support substrate according to embodiment 1 of the present invention;

fig. 3a to 3m are a top view and a cross-sectional view of a device formed in different process steps when a conductive layer and a solder layer are formed on a supporting substrate according to a method for manufacturing a fluid-assembled micro-scale device module according to embodiment 1 of the present invention;

FIG. 4a is a schematic cross-sectional view of a support substrate according to embodiment 2 of the present invention;

FIG. 4b is a schematic cross-sectional view of a micro-scale device module according to embodiment 2 of the present invention;

fig. 4c is a detailed schematic diagram of a cross-sectional structure of a micro device module according to embodiment 2 of the present invention;

FIG. 4d is a top view of a supporting substrate according to embodiment 2 of the present invention;

fig. 5 is a cross-sectional view of a micron-scale device module finally manufactured through various processes in example 2 of the present invention.

Detailed Description

In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.

Further, the supporting substrate comprises a supporting substrate main body, the supporting substrate main body is provided with the mounting groove, and the supporting substrate main body is provided with the circuit wiring layer, wherein the groove bottom surface and part of groove wall of the mounting groove are continuously covered by the first circuit wiring layer;

furthermore, each micron-sized functional chip is integrally contained in a corresponding mounting groove, the interposer substrate is arranged outside the more than one mounting grooves, the first circuit wiring layer is continuously covered on the bottom surface and the side wall of the mounting groove, and the second circuit wiring layer is arranged outside the mounting groove.

Further, the whole micron order device is acceptd in a corresponding mounting groove, each the mounting groove includes first recess and second recess, first recess sets up the tank bottom surface of second recess, and each micron order function chip is wholly acceptd in corresponding first recess, and each intermediary's base plate is wholly acceptd in corresponding second recess, wherein, first circuit wiring layer covers in succession establishes the tank bottom surface and the lateral wall of first recess, second circuit wiring layer covers establishes the tank bottom surface of second recess.

Furthermore, the micron-scale device module assembled by the fluid comprises a plurality of micron-scale devices, a plurality of mounting grooves are formed in the supporting substrate and matched with the micron-scale devices, each mounting groove at least contains an epitaxial structure of a corresponding micron-scale functional chip, a second electrode of the corresponding micron-scale functional chip is electrically connected with the first circuit wiring layer, and the second circuit wiring layer is electrically connected with the conducting layer on the intermediary substrate.

Further, the sizes of the mounting grooves are the same or different, and the micron-sized devices are the same or different types of devices.

Furthermore, the micron-scale devices comprise N (N is more than or equal to 2) types of micron-scale devices, the mounting grooves have N sizes, and the nth (N is more than or equal to 1 and less than or equal to N) type of micron-scale devices correspond to the mounting grooves with the nth size.

Further, the nth type of micron-scale device includes an nth type of micron-scale functional chip and an nth type of interposer, the diameter of the second groove of the mounting groove having the nth size is larger than the diameter of the nth type of interposer and smaller than the diameter of the n +1 th type of interposer, and the diameter of the first groove of the mounting groove having the nth size is larger than the diameter of the nth type of micron-scale functional chip and smaller than the diameter of the n-1 th type of micron-scale functional chip.

Furthermore, the installation grooves are distributed in an array mode.

Further, the centers of the grooves of the mounting grooves are aligned in two directions which are arranged at an angle.

Further, the centers of the plurality of grooves of the plurality of mounting grooves are aligned in two mutually perpendicular directions.

Further, the interposer includes an interposer body and a conductive layer, and a solder layer is electrically connected to the conductive layer, the solder layer is electrically connected to the first electrode, and the conductive layer is electrically connected to the second circuit wiring layer.

Further, the material of the interposer substrate body includes transparent glass, and the conductive layer includes a transparent conductive layer.

Further, the interposer further comprises a color conversion module and/or a driving module.

Further, the micro-scale functional chip includes an LED chip having a vertical structure.

Further, the diameter of the epitaxial structure is 2-10 μm, preferably 3-5 μm.

Further, the diameter of the first electrode is smaller than the diameter of the epitaxial structure.

and assembling the micron-sized device and the supporting substrate by adopting a fluid assembling process, at least accommodating the epitaxial structure of the micron-sized functional chip in the installation groove, and electrically connecting the first electrode with the second circuit wiring layer and the second electrode with the first circuit wiring layer through the intermediary substrate.

Further, the manufacturing method comprises the following steps:

and processing a plurality of mounting grooves on the support substrate, assembling the micron-sized devices and the support substrate by adopting a fluid assembly process, and at least correspondingly accommodating the epitaxial structures of the micron-sized functional chips in the mounting grooves.

Further, the manufacturing method specifically comprises the following steps:

processing and forming a first table-board array comprising a plurality of first table-boards on an epitaxial wafer of the micron-scale functional chip, and respectively manufacturing first electrodes on the plurality of first table-boards, wherein the plurality of first table-boards are electrically isolated from each other;

processing and forming a second table-board array comprising a plurality of second table-boards on the intermediate substrate main body, and respectively manufacturing a conductive layer on the plurality of second table-boards;

combining the epitaxial wafer of the micron-scale functional chip with the intermediate substrate main body, and electrically connecting the first electrode on each first table top with the conductive layer on the second table top;

removing the substrate of the epitaxial wafer of the micron-scale functional chip to obtain a plurality of epitaxial structures of the micron-scale functional chip, and then manufacturing a second electrode on the epitaxial structure of each micron-scale functional chip to form a plurality of micron-scale functional chips, wherein the second electrodes and the first electrodes are arranged in a back-to-back mode;

thinning the intermediary substrate to form a plurality of micron-sized devices, wherein each micron-sized device comprises a micron-sized functional chip and an intermediary substrate;

providing a supporting substrate, wherein more than one mounting groove and circuit wiring layers are arranged on the supporting substrate, each circuit wiring layer comprises a first circuit wiring layer and a second circuit wiring layer, the micron-scale devices are transferred onto the supporting substrate, at least the epitaxial structure of one corresponding micron-scale functional chip is contained in the mounting groove, the second electrode of the corresponding micron-scale functional chip is electrically connected with the first circuit wiring layer, and the second circuit wiring layer is electrically connected with the conducting layer on the intermediary substrate.

Further, the plurality of first table tops and the plurality of second table tops are distributed in an array mode.

Further, the second array of mesas has a mesa pitch that is an integer multiple of the pitch of the first array of mesas in the two angularly disposed directions.

Further, the second mesa array has a mesa pitch that is an integer multiple of the first mesa array pitch in two mutually perpendicular directions.

Further, the manufacturing method specifically comprises the following steps: providing a support substrate, and processing and forming a plurality of mounting grooves distributed in an array on the support substrate;

manufacturing a first circuit wiring layer in the mounting groove, and enabling the first circuit wiring layer to continuously cover the bottom surface and the side wall of the mounting groove;

forming an insulating layer on the first circuit wiring layer and processing the insulating layer to form a window exposing the first circuit wiring layer,

forming a first conductive connecting layer at the window, and electrically connecting the first conductive connecting layer with the first circuit wiring layer;

arranging a second circuit wiring layer and a second conductive connecting layer in or outside the mounting groove, and enabling at least part of the second circuit wiring layer to be located above the insulating layer, wherein the second conductive connecting layer is electrically connected with the second circuit wiring layer;

and transferring the micron-scale device to the supporting substrate, at least accommodating the epitaxial structure of the corresponding micron-scale functional chip in the installation groove, electrically connecting the second electrode of the corresponding micron-scale functional chip with the first conductive connecting layer, and electrically connecting the second conductive connecting layer with the conductive layer on the intermediate substrate.

The technical solution, the implementation process and the principle thereof will be further explained with reference to the drawings, and the following materials, the manufacturing process and the like used therein may be known to those skilled in the art unless otherwise specified.

The invention provides a fluid-assembled micron-sized device module, which comprises a micron-sized functional chip, an intermediate substrate and a supporting substrate, wherein the micron-sized functional chip and the intermediate substrate are connected to form a micron-sized device, and the supporting substrate is connected with a plurality of micron-sized devices;

the micron-scale functional chip comprises an epitaxial structure (which can be understood as a chip main body, the same below), a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively arranged on two sides of the epitaxial structure in a back-to-back manner; the supporting substrate comprises a supporting substrate main body, and a mounting groove and a circuit wiring layer which are arranged on the supporting substrate main body, wherein the circuit wiring layer is also electrically connected with the conductive connecting layer;

the first electrode of the micron-scale functional chip is electrically connected with the welding layer of the intermediate substrate, the second electrode of the micron-scale functional chip is electrically connected with the circuit wiring layer on the supporting substrate, and the welding layer of the intermediate substrate is electrically connected with the circuit wiring layer.

Specifically, the substrate main body of the interposer substrate may be transparent glass, the micron-sized functional chip may be an LED chip having a vertical structure, the whole micron-sized functional chip may be approximately cylindrical, and the diameter of the epitaxial structure of the micron-sized functional chip is 3-5 um.

Specifically, the LED chip has a first electrode and a second electrode arranged oppositely, and the transparent glass (i.e., the interposer substrate, the same applies below) has a conductive layer and a solder layer arranged in a stacked manner, wherein a coverage area of the conductive layer is larger than that of the first electrode of the micron-scale functional chip, the solder layer is approximately circular, and a coverage area of the solder layer is within a coverage area of the first electrode of the micron-scale functional chip.

Specifically, the center of a plurality of mounting grooves on the supporting substrate is array arrangement and distribution, each mounting groove corresponds to a micron-sized functional chip, all mounting grooves are all arranged at the same height, a plurality of centers of the mounting grooves are aligned in two directions with a certain included angle, the sizes of all mounting grooves can be the same, the mounting grooves are approximately cylindrical, and for example, the centers of the mounting grooves on the supporting substrate are aligned in two mutually perpendicular directions.

Specifically, the diameter of the mounting groove on the supporting substrate is larger than that of the micron-sized functional chip and smaller than that of the interposer substrate.

Specifically, the first conductive connection layer located at the bottom of the mounting groove is approximately circular, the second conductive connection layer around each mounting groove is connected with the corresponding conductive layer of the interposer substrate, and the second conductive connection layer around the mounting groove is circular.

In order to achieve the purpose of providing a method for manufacturing a micron-sized device module for fluid assembly, the technical scheme of the invention is as follows: a method for manufacturing a fluid-assembled micron-sized device module comprises the following steps:

step S1: preparing a micron-scale functional chip and a medium substrate, and connecting the micron-scale functional chip and the medium substrate to form a micron-scale device;

step S2: preparing a supporting substrate with mounting grooves, conductive connecting layers and circuit wiring layers which are arranged in an array;

step S3: connecting the support substrate and the micron-sized device in a fluid assembly mode to enable the micron-sized device to be embedded into the mounting groove;

step S4: and electrically connecting the electrode of the micron-scale device with the circuit wiring layer of the supporting substrate in a reflow or hot-press welding mode.

Specifically, step S1 specifically includes:

step S1.1: preparing an array comprising a plurality of epitaxial structures and a first electrode on an epitaxial wafer of the micron-scale functional chip;

step S1.2: preparing a table top on the intermediary substrate, and sequentially preparing a conductive layer and a welding layer on the table top;

step S1.3: moving the epitaxial wafer to a proper position above the intermediate substrate, so that the centers of the first electrodes of the partial micron-sized functional chips are aligned with the center of the welding layer on the intermediate substrate;

step S1.4: placing down the epitaxial wafer, enabling the first electrode of the micron-scale functional chip to be in contact with the conductive layer on the medium substrate, and then bonding to form electrical connection;

step S1.5: stripping the substrate of the epitaxial wafer by adopting a laser stripping mode to form an epitaxial structure;

step S1.6: repeating steps S1.3-S1.5 until all of the epitaxial structures are transferred to the interposer substrate;

step S1.7: preparing a second electrode on the newly exposed surface of the epitaxial structure stripped by the laser;

step S1.8: and cutting the intermediary substrate to obtain a plurality of micron-scale devices, wherein each micron-scale device comprises an intermediary substrate and a micron-scale functional chip.

Example 1

The present embodiment provides a micron-scale device module for fluid assembly and a corresponding manufacturing method, wherein the functions of the micron-scale functional chips included in each micron-scale device are the same.

Referring to fig. 1a to 1e, fig. 1a to 1e are schematic structural diagrams illustrating components and the whole of a fluid-assembled micro-scale device module provided in embodiment 1, wherein fig. 1a is a schematic cross-sectional structure of a micro-scale functional chip, the micro-scale functional chip is a vertical-structure chip, and the micro-scale functional chip has a first electrode 102 and a second electrode 103; FIG. 1b is a cross-sectional view of an interposer substrate having a conductive layer 202 and a solder layer 203; FIG. 1c shows the structure of a micron-scale device 200 formed by connecting a micron-scale functional chip and an intermediate substrate; fig. 1d shows a structure of the supporting substrate 300, the supporting substrate 300 includes a supporting substrate main body 301, the supporting substrate main body 301 is provided with a plurality of mounting grooves 304, a second conductive connecting layer 302 is disposed around the mounting grooves 304, a first conductive connecting layer 303 is disposed at the bottom of the mounting grooves, fig. 1e is a cross-sectional view of the whole module of the micron-scale device, which includes a plurality of micron-scale devices and a supporting substrate, wherein the first electrode 102 of the micron-scale functional chip is connected to the bonding layer 203 of the intermediate substrate, the second electrode 103 of the micron-scale functional chip is connected to the first conductive connecting layer 303 of the supporting substrate, and the conductive layer 202 of the intermediate substrate is connected to the second conductive connecting layer 302 of the supporting substrate.

Referring to fig. 2a, fig. 2a is a bottom view of the interposer substrate in the fluid-assembled micro-scale device module according to the present embodiment, the bottom view is viewed from the solder layer of the interposer substrate to the main body of the interposer substrate, the solder layer 203 of the interposer substrate is on the top, the conductive layer 202 is on the bottom, and the main body 201 of the interposer substrate is under the conductive layer 202.

Fig. 2b is a bottom view of the micron-scale functional chip and the interposer substrate in the fluid-assembled micron-scale device module according to the present embodiment, the bottom view is viewed from the second electrode of the micron-scale functional chip to the main body of the interposer substrate, wherein the second electrode 103 of the micron-scale functional chip is at the top, and then the epitaxial structure 101, the first electrode 102 and the bonding layer 203 of the interposer substrate are respectively disposed, and finally the conductive layer 202 of the interposer substrate and the main body of the interposer substrate 201 are disposed; please refer to fig. 1 a-1 e, fig. 2a and fig. 2b to show the position relationship of the micro functional chip and each portion of the interposer.

Fig. 2c is a top view of the supporting substrate in the fluid-assembled micro-scale device module of this embodiment, a second conductive connection layer 302 is disposed around the mounting groove 304, and a first conductive connection layer 303 is disposed at the bottom of the mounting groove 304, so as to understand the top-bottom relationship of each portion of the supporting substrate with reference to fig. 1 and fig. 2 c.

The connection relationship, shape and size of the micron-scale device module in this embodiment will be described in detail below.

Referring to fig. 1 a-1 e, and fig. 2 a-2 c, a conductive layer 202 and a bonding layer 203 are sequentially disposed on a main body 201 of an interposer substrate, wherein the bonding layer 203 of the interposer substrate has a smaller diameter than the epitaxial structure 101 of the micron-scale functional chip; the mounting grooves 304 on the supporting substrate main body 301 are arranged in an array, each mounting groove 304 corresponds to each micron-sized functional chip, all the mounting grooves are at the same height, the mounting grooves are aligned in two mutually perpendicular directions, the diameters of all the mounting grooves 304 on the supporting substrate 300 are the same, and the diameters of the mounting grooves 304 are larger than the diameter of the epitaxial structure 101 and smaller than the diameter of the interposer substrate main body 201.

Specifically, the micron-scale functional chip is an LED chip with a vertical structure, the whole structure is approximately cylindrical, the diameter of the epitaxial structure 101 is 5um, the upper surface and the lower surface of the epitaxial structure are respectively provided with a circular first electrode 102 and a circular second electrode 103, the diameter of the first electrode 102 is smaller than that of the epitaxial structure 101, the diameter of the first electrode 102 can be 2um, the diameter of the second electrode is close to that of the epitaxial structure 101, and the diameter of the second electrode 103 is 4 um; the interposer substrate body 201 is made of transparent glass, a conductive layer (which may be a transparent conductive layer, the same below) 202 and a solder layer 203 are sequentially disposed on the transparent glass, the conductive layer 202 is approximately circular, the diameter may be 15um, the solder layer 203 is approximately circular, the diameter should be smaller than the epitaxial structure 101, the diameter of the solder layer 203 may be 2um, the shapes of all the mounting grooves 304 on the support substrate 300 may be cylindrical or approximately cylindrical, the diameter of the mounting groove 304 may be 7um, the first conductive connection layer 303 at the bottom of the mounting groove 304 on the support substrate is a circular structure, the diameter may be 4um, the second conductive connection layer 302 at the periphery of each mounting groove 304 is circular, the outer diameter may be 12um, and the inner diameter may be 10 um.

The following steps of fabricating the fluid-assembled micro-scale device module according to embodiment 1 of the present invention are described in detail, and the following steps are described based on the above preferred embodiments.

S1, connecting the micron-scale functional chip with a medium substrate to form a micron-scale device, which specifically comprises the following steps:

s1.1, firstly, defining a plurality of first table tops distributed in an array form on an LED epitaxial wafer by using an etching process, and then etching a plurality of deep grooves by using the etching process to form electric isolation among the plurality of first table tops so as to form a plurality of LED epitaxial structures 101; then, respectively manufacturing first electrodes 102 on the plurality of first table tops through processes of evaporation, sputtering and the like, wherein the first electrodes 102 are in contact with a p-type GaN epitaxial layer of an LED epitaxial wafer, the first electrodes 102 are p-type metal conducting layers of an LED chip, the first electrodes 102 comprise current diffusion layers and under-bump metal layers, the current diffusion layers can be made of ITO, and the under-bump metal layers can be made of materials which are in good contact with the ITO current diffusion layers, such as Cr/Pt/Au and the like;

step s1.2. providing transparent glass to prepare an interposer substrate, specifically comprising:

firstly, etching a plurality of second table tops distributed in an array form on transparent glass (namely an intermediate substrate main body, the lower part is the same as the intermediate substrate main body) by utilizing a mask etching process, wherein the table top pitch of the plurality of second table tops on the transparent glass is integral multiple of the pitch of the plurality of first table tops on the LED epitaxial wafer prepared in the step S1.1 in two directions with a certain included angle; then, preparing a conductive layer 202 on the table top of the transparent glass by processes such as evaporation, sputtering and the like, wherein the conductive layer 202 can be made of a transparent conductive film material which can be patterned such as ITO and the like;

preparing a welding layer 203 on the conducting layer 202 through processes of evaporation, sputtering and the like, wherein the welding layer 203 can be of a multilayer structure, the welding layer 203 can comprise an under-bump metallization layer and a metal bump layer, the under-bump metallization layer can be made of Cr/Pt/Au and other materials which are in good contact with an ITO current diffusion layer, and the metal bump layer can be made of AuSn, SnAg, SnAgCu, InSn and other solder bumps or Au bumps, Cu bumps and the like;

step S1.1 and step S1.2 have no precedence relationship and can be executed in parallel;

step S1.3, after the step S1.1 and the step S1.2 are both completed, moving the LED epitaxial wafer to a proper position above the intermediate substrate, so that the first electrode 102 of part of the LED epitaxial wafer is aligned with the welding layer 203 on the transparent glass;

s1.4, putting down the LED epitaxial wafer, enabling the first electrode 102 combined with the LED epitaxial wafer to be in contact with the welding layer 203 on the transparent glass, and bonding the whole LED epitaxial wafer and the transparent glass in a combined mode of heating, pressurizing or ultrasonic, so that the first electrode 102 is electrically connected with the welding layer 203;

s1.5, stripping the substrate of the LED epitaxial wafer by adopting a laser stripping mode to obtain an LED epitaxial structure array, wherein the first electrode 102 on each LED epitaxial structure 101 is connected with the welding layer 203 on the transparent glass serving as the substrate main body;

step S1.6, repeating the step S1.3 to the step S1.5 to finish the transfer of all LED epitaxial structures on the whole LED epitaxial wafer, wherein in the two directions forming a certain included angle, the mesa pitch of the mesa array of the transparent glass is integral multiple of the mesa pitch of the mesa array of the LED epitaxial wafer, and the LED epitaxial structures on the whole LED epitaxial wafer can be completely utilized by multiple times of transfer;

step S1.7, manufacturing a second electrode 103 on the n-type GaN epitaxial layer of the LED epitaxial structure transferred onto the interposer substrate through processes of evaporation, sputtering and the like, wherein the second electrode 103 is an n-type metal conducting layer, the second electrode 103 comprises a conducting layer and an under bump metal layer, the conducting layer is a multilayer metal structure, and the multilayer metal structure with high reflectivity and good conducting property is required to be selected, for example, Cr/A1/Ti/Au multilayer metal is used, and the under bump metal layer can be a material which is in good contact with the conducting layer, such as Cr/Pt/Au and the like;

s1.8, transferring and bonding an intermediate substrate (containing functional chips) to a grinding disc by using wax, grinding and thinning the intermediate substrate, only reserving a second table surface part, and then removing the wax to obtain independent LED chips and the intermediate substrate connected with the LED chips in a one-to-one correspondence manner, namely the micron-scale device 200 is obtained;

s2, preparing a supporting substrate with mounting grooves arranged in an array manner, a conductive connecting layer (comprising a first conductive connecting layer and a second conductive connecting layer) and a circuit wiring layer;

step S2.1: providing a micron-scale device composed of an LED chip and an intermediate substrate and a supporting substrate main body 301 for preparing a final micron-scale device module, wherein the supporting substrate main body 301 can be a silicon substrate;

step S2.2: a plurality of mounting grooves, conductive connection layers and circuit wiring layers are formed on the supporting substrate body 301, as shown in fig. 3a to 3m, which are top views and cross-sectional views after different process steps;

the specific process comprises the following steps:

step S2.2.1: preparing a plurality of mounting grooves 402 on a support substrate main body 401 by an etching process, wherein the depth of each mounting groove 402 is equivalent to the thickness of a single LED chip (i.e., the aforementioned micron-sized functional chip, the same applies below), the depth of the mounting groove 402 is 2-7um, fig. 3a is a top view after this step, fig. 3b is a cross-sectional view after this step, a first plane (i.e., a groove bottom surface of the mounting groove) 403 at the bottom of the mounting groove 402 is approximately circular, and the diameter thereof is slightly larger than the diameter of the single LED chip;

step S2.2.2: a first circuit wiring layer 404 is deposited on the supporting substrate main body 401, fig. 3c is a top view after this step, fig. 3d is a cross-sectional view after this step, the first circuit wiring layer 404 covers the first plane 403 of each mounting groove, and the first circuit wiring layer 404 on the first plane 403 of each column of mounting grooves covers the side wall on the same side of the mounting groove and is connected on the second plane 405 of the supporting substrate main body 401, the first circuit wiring layer 404 in each column of mounting grooves is led out to the interconnection channel of this column, and the material of the first circuit wiring layer 404 is a low-resistance metal, such as Al.

Step S2.2.3: depositing an insulating layer 406 on the first circuit wiring layer 404 and etching an insulating layer opening 407, wherein the insulating layer may be SiO2, etc., fig. 3e is a top view after the step, fig. 3f is a cross-sectional view after the step, the insulating layer opening 407 is used for a first conductive connection layer 408 to be deposited later, the first conductive connection layer 408 is surrounded by the insulating layer to reduce the risk of solder flowing/overflowing during soldering and short-circuiting, the first conductive connection layer 408 is connected to the first circuit wiring layer 404, the insulating layer 406 is not shown in fig. 3e, a circle 407 marked by a dotted line in fig. 3e indicates a position of the insulating layer opening 407, and the insulating layer 406 is provided to isolate the first circuit wiring layer 404 from a second circuit wiring layer 409 to be deposited later;

step S2.2.4: depositing a first conductive connection layer 408 covering the insulating layer opening 407, wherein the first conductive connection layer 408 is electrically connected to the first circuit wiring layer 404, fig. 3g is a top view after the step, and fig. 3h is a cross-sectional view after the step, the first conductive connection layer 408 includes an under bump metallization layer and a metal bump layer, the material of the under bump metallization layer may be Cr/Pd/Au, and the metal bump layer may be a multi-layer structure of pure In or In/Sn, or an eutectic material such as AuSn;

step S2.2.5: depositing a second circuit wiring layer 409 solder layer, fig. 3i being a top view and fig. 3j being a cross-sectional view after this step, the second circuit wiring layer 409 material being in line with the first circuit wiring layer 404; as shown in fig. 3i, the second circuit wiring layer 409 may be in the shape of an open circular ring or a closed circular ring, the second circuit wiring layer 409 in each row of mounting slots is led out to the interconnection channel in the row, and the second circuit wiring layer 409 is above the first circuit wiring layer 404 at the position where the second circuit wiring layer 409 and the first circuit wiring layer 404 intersect, and is separated by an insulating layer 406;

step S2.2.6: depositing a second conductive connection layer 410, wherein the second conductive connection layer 410 is electrically connected to the second circuit wiring layer 409, fig. 3k is a top view after the step, fig. 3l is a cross-sectional view after the step, and the material of the second conductive connection layer 410 is the same as the material of the first conductive connection layer 408;

step S3: assembling the support substrate and the micron-sized device in a fluid assembling mode, so that the micron-sized device is embedded into the mounting groove, and the effect of transferring the LED device to the support substrate is achieved;

step S4: the second electrode 103 of the micron-scale functional chip is electrically connected with the first conductive connecting layer 408 on the supporting substrate main body 401 through reflow or thermocompression bonding; and, the conductive layer 202 on the interposer substrate main body 201 is electrically connected to the second conductive connection layer 410 on the support substrate main body 401, and the cross-sectional view of the micron-scale device module is shown in fig. 3 m.

Example 2

In the micron-scale device module for fluid assembly and the corresponding manufacturing process provided by the embodiment, the micron-scale functional chips included in each micron-scale device have different functions, and typically, three micron-scale functional chips with different functions can be provided.

Referring to fig. 4a, which is a schematic structural diagram of a support substrate in a fluid-assembled micro-scale device module according to the present embodiment, the support substrate is 300, and a main body of the support substrate is provided with three mounting grooves having three structures and sizes, namely, a first mounting groove 311, a second mounting groove 321, and a third mounting groove 331.

Fig. 4b is a schematic structural diagram of a fluid-assembled micro-scale device module according to the present embodiment, which includes a first micro-scale functional chip 110, a first interposer 210, a second micro-scale functional chip 120, a second interposer 220, a third micro-scale functional chip 130, a third interposer 230, and a supporting substrate 300.

Fig. 4c illustrates each component in the micron-scale device module in detail, a first micron-scale functional chip and a first interposer substrate are disposed in a first mounting slot 311 of the support substrate, the first micron-scale functional chip includes an epitaxial structure 111, a first electrode 112 and a second electrode 113, the first interposer substrate includes an interposer substrate main body 211, a conductive layer 212 and a solder layer 213, the first mounting slot 311 has a first plane 312 and a second plane 313 sequentially disposed along a depth direction thereof, circuit wiring layers are disposed on the first plane 312 and the second plane 313, the circuit wiring layers are further connected to the first conductive connection layer 314 and the second conductive connection layer 315, and the second mounting slot is similar to the first mounting slot in the micron-scale functional chip, the interposer substrate, the two platforms and the two conductive connection layers disposed in the third mounting slot.

Fig. 4d is a top view of the support substrate showing the mounting grooves and the conductive connection layer provided on the support substrate main body.

The functions and relationships of the components of the micron-scale device module are described in detail below.

Referring to fig. 4 a-4 d, the definition of the first, second and third micron-scale devices in this embodiment is similar to that in embodiment 1, the whole formed by connecting the first micron-scale functional chip 110 and the first interposer 210 in this embodiment is called a first micron-scale device, the whole formed by connecting the second micron-scale functional chip 120 and the second interposer 220 is called a second micron-scale device, the whole formed by connecting the third micron-scale functional chip 130 and the third interposer 230 is called a third micron-scale device, the three different micron-scale devices correspond to the three mounting grooves, and the final micron-scale device module comprises the three different micron-scale devices, although not specifically described, however, n different micron-scale devices and n corresponding mounting grooves (n is an integer greater than or equal to 2) may be disposed in the micron-scale module, and the types and the numbers of the micron-scale devices and the mounting grooves are not particularly limited.

The first, second, and third micron-scale functional chips in this embodiment have the same structure as the micron-scale functional chip in embodiment 1, the first micron-scale functional chip 110 in this embodiment includes a first epitaxial structure 111, and the front and back surfaces of the first epitaxial structure 111 are respectively provided with a first electrode 112 and a second electrode 113; similarly, the second micron-scale functional chip 120 includes a second epitaxy structure 121, and the front and back sides of the second epitaxy structure 121 are respectively provided with a first electrode 122 and a second electrode 123; the third micron-scale functional chip 130 includes a third epitaxial structure 131, and a first electrode 132 and a second electrode 133 are respectively disposed on front and back sides of the third epitaxial structure 131.

Specifically, the structures of the first, second, and third interposer are the same as those of the interposer in embodiment 1, and the first interposer 210 in this embodiment includes a first interposer main body 211, and a conductive layer 212 and a solder layer 213 are disposed on the first interposer main body 211; similarly, the second interposer 220 includes a second interposer body 221, the second interposer body 221 having a conductive layer 222 and a solder layer 223 disposed thereon; the third interposer 230 includes a third interposer body 231, and a conductive layer 232 and a solder layer 233 are disposed on the third interposer body 231.

The structure of the support substrate 300 is similar to that of the support substrate of embodiment 1, mounting grooves of various sizes and types are provided on the support substrate main body, each mounting groove includes two platforms (i.e., two step platforms), three types of mounting grooves are shown in fig. 4a-c, a first type mounting groove 311 has a first plane 312 and a second plane 313 sequentially arranged along the depth direction thereof, a first conductive connecting layer 314 is provided on the first plane 312, a second conductive connecting layer 315 is provided on the second plane 313, the first plane 312 is lower than the second plane 313, and the second plane 313 is lower than the support substrate main body; similarly, the second mounting groove 321 has a first plane 322 and a second plane 323 sequentially arranged along the depth direction thereof, the first conductive connecting layer 324 is arranged on the first plane 322, the second conductive connecting layer 325 is arranged on the second plane 323, and each platform of the second mounting groove 321 is close to that of the first mounting groove 311 in height; the third mounting groove 331 has a first plane 332 and a second plane 333 sequentially arranged in a depth direction thereof, the first conductive connecting layer 334 is arranged on the first plane 332, the second conductive connecting layer 335 is arranged on the second plane 333, and each platform of the third mounting groove 331 is close to that of the first mounting groove 311 in height.

In order to enable different types of micron-sized devices to be smoothly assembled into the corresponding mounting grooves on the supporting substrate main body in the fluid self-assembly process, the micron-sized functional chips and the mounting grooves of the present embodiment are limited by a certain size relationship, and three types of micron-sized functional chips, three types of interposer substrates, a supporting substrate, and three types of mounting grooves on the supporting substrate are exemplified below.

Specifically, the first micron-sized functional chip 110, the second micron-sized functional chip 120, and the third micron-sized functional chip 130 are vertical-structured chips, the main body is approximately cylindrical, and the dimensional relationship is as follows: the diameter of the first epitaxy structure 111 is smaller than the diameter of the main body of the second epitaxy structure 121, the diameter of the second epitaxy structure 121 is smaller than the diameter of the main body of the third epitaxy structure 131, each micron-sized functional chip is provided with a first electrode and a second electrode of different sizes, the sizes of the first electrode and the second electrode are related to the sizes of the mounting grooves of the corresponding micron-sized functional chip, the corresponding intermediate substrate and the corresponding support substrate, and the first electrode and the second electrode are arranged according to the same criteria as the first electrode and the second electrode of the micron-sized functional chip in embodiment 1.

Specifically, the first interposer 210, the second interposer 220, and the third interposer 230 are sized such that the diameter of the first interposer body 211 is larger than that of the second interposer body 221 and that of the third interposer body 231, and a conductive layer and a solder layer are respectively disposed on the interposer bodies of the interposers, and the conductive layer and the solder layer are disposed as in the conductive layer and the solder layer of the interposer of embodiment 1.

Specifically, the support substrate 300 includes a plurality of first mounting grooves 311, second mounting grooves 321, and third mounting grooves 331, the three mounting grooves respectively corresponding to the overall shapes of three micron-sized devices, the diameter of the first plane 312 in the first mounting groove 311 is larger than the diameter of the first epitaxial structure 111, and the diameter of the second plane 313 in the first mounting groove 311 is larger than the diameter of the first interposer substrate main body 211; similarly, the diameter of the first flat surface 322 in the second type of mounting groove 321 is larger than the diameter of the second extension 121, and the diameter of the second flat surface 323 in the second type of mounting groove 321 is larger than the diameter of the second interposer substrate body 221; the diameter of the first flat surface 332 in the third mounting recess 331 is larger than the diameter of the third extension 131, and the diameter of the second flat surface 333 in the third mounting recess 331 is larger than the diameter of the third interposer body 231.

Specifically, the first electrode 112 of the first micron-scale functional chip 110 is electrically connected to the solder layer 213 of the first interposer substrate 210, the second electrode 113 of the first micron-scale functional chip 110 is electrically connected to the first conductive connection layer 314 on the first plane 312 in the first mounting slot 311, the conductive layer 212 of the first interposer substrate 210 is electrically connected to the second conductive connection layer 315 on the second plane 313 in the first mounting slot 311, and the connection relationships between the second/third micron-scale functional chip, the second/third interposer substrate, and the second/third mounting slot are similar.

In this embodiment, the first, second, and third micron-sized functional chips may be arbitrarily selected, and for the LED display application field, the blue LED chip may be selected for use as the first and second micron-sized functional chips, the third micron-sized functional chip may be a green LED chip, the first, second, and third interposer substrates may be transparent glass, and red light quantum dot fluorescent powder may be further disposed on the surface of the second interposer substrate.

The following steps of fabricating the fluid-assembled micro-scale device module according to embodiment 2 of the present invention are described in detail, and the following steps are described based on the preferred embodiments.

Referring to fig. 5, fig. 5 is a cross-sectional view of a micro device module, which includes only a first micro functional chip, an interposer substrate, and a portion of a support substrate.

The manufacturing method of the fluid-assembled micron-scale device module specifically comprises the following steps:

step S1: connecting the micron-scale functional chip with the medium substrate to form a micron-scale device, specifically comprising:

step S1.1: preparing a plurality of first table tops distributed in an array on an LED epitaxial wafer, and depositing a first electrode on the first table tops on the LED epitaxial wafer, wherein the manufacturing process of the embodiment is the same as the step S1.1 of the embodiment 1 except that the type and the size of a chip may be different from those of the embodiment 1;

step S1.2: the transparent glass is used as an intermediate substrate main body, and a conductive layer and a welding layer are sequentially processed and formed on the intermediate substrate main body, wherein the manufacturing process is the same as the step S1.2 of the embodiment 1 except that the sizes of the transparent glass can be different;

step S1.3: after the step S1.1 and the step S1.2 are both completed, moving the LED epitaxial wafer to a proper position above the transparent glass, so that the first electrode of the LED epitaxial wafer is aligned with the solder layer of the transparent glass, and during alignment, the first electrode of the first micron-scale functional chip is required to be aligned with the solder layer of the first interposer substrate, or the first electrode of the second micron-scale functional chip is required to be aligned with the solder layer of the first interposer substrate, or the first electrode of the third micron-scale functional chip is required to be aligned with the solder layer of the third interposer substrate;

step S1.4: forming electrical connection between the micron-sized functional chip and the transparent glass through bonding, wherein the process details are the same as the step S1.4 of the embodiment 1;

step S1.5: stripping the substrate of the LED epitaxial wafer in a laser stripping mode to form an LED epitaxial structure;

step S1.6: repeating the step S1.3 to the step S1.5 to complete the transfer of all chips on the whole LED epitaxial wafer, wherein each transfer transfers an LED epitaxial structure onto the interposer substrate, because the mesa array period of the transparent glass is an integral multiple of the mesa array period of the LED epitaxial wafer, multiple transfers are required to enable the epitaxial structure on the epitaxial wafer to be fully utilized, the first micron-scale functional chip corresponds to the first interposer substrate, the second micron-scale functional chip corresponds to the second interposer substrate, and the third micron-scale functional chip corresponds to the third interposer substrate.

Step S1.7: manufacturing the second electrodes of the first, second and third micron-scale functional chips, wherein the manufacturing process is the same as the step S1.7 of the embodiment 1;

step S1.8: transferring and bonding the intermediate substrate (containing functional chips) onto a grinding disc by using wax, grinding and thinning the intermediate substrate, only keeping the second table-board part, and then removing the wax to obtain independent LED chips in one-to-one correspondence and a part of transparent glass serving as the intermediate substrate, namely a first micron-scale device, a second micron-scale device and a third micron-scale device;

step S2: preparing a support substrate with mounting grooves arranged in an array, conductive connecting layers (including a first conductive connecting layer and a second conductive connecting layer) and a circuit wiring layer;

step S2.1: providing a micron-scale device consisting of an LED chip and an intermediary substrate and a supporting substrate main body, wherein the supporting substrate main body is used for preparing a final micron-scale device module and can be a silicon substrate;

step S2.2: preparing a plurality of mounting grooves, a conductive connecting layer and a circuit wiring layer on a supporting substrate main body, and specifically comprising the following steps:

step S2.2.1: preparing a plurality of mounting grooves on a supporting substrate by an etching process, wherein each mounting groove is in the shape of two superposed coaxial cylindrical grooves, the diameter of the upper cylindrical groove is large, the diameter of the lower cylindrical groove is small, the preparation process is similar to that of embodiment 1, and the difference is that two planes are defined in one mounting groove: the second plane is higher than the first plane;

s2.2.1 the subsequent process is substantially the same as the steps S2.2.2-S2.2.6 of example 1, and a conductive connecting layer is arranged at the bottom of the lower cylinder (i.e. on the first plane) and the bottom of the upper cylinder (i.e. on the second plane) of each mounting groove;

step S3: assembling the supporting substrate and the micron-sized devices through a fluid process, so that the micron-sized devices are embedded into the mounting grooves, and the effect of transferring the LED devices to the supporting substrate is achieved, for example, a plurality of micron-sized devices can be placed into fluid one time or multiple times, and one or more micron-sized devices are transferred into corresponding mounting grooves each time;

step S4: and obtaining a final micron-scale device module through reflow or thermocompression bonding, wherein a cross-sectional view of the micron-scale device module is shown in fig. 5, only a part of the first micron-scale functional chip, an intermediate substrate and a supporting substrate is shown in fig. 5, and the second to third micron-scale device modules have basically the same structure, and the difference lies in that the sizes of each device and the corresponding mounting groove are different.

The invention introduces the intermediate substrate to reduce the size of the device; the introduction of the intermediate substrate can utilize the advantages of mass transfer and avoid the defect of difficult mass transfer repair, and the defects of epitaxy and chip process introduction can be greatly reduced only by screening out bad device marks and then combining fluid assembly; the interposer substrate may also perform color conversion, driving, and other functions.

According to the fluid-assembled micron-scale device module, the intermediary substrate is arranged, the two electrodes of the micron-scale functional chip with the vertical structure are arranged on the two sides of the epitaxial structure, and the intermediary substrate and the micron-scale functional chip are combined to form the micron-scale device, so that a large number of micron-scale devices can be quickly transferred to the supporting substrate by adopting a standard fluid self-assembly process, and the problem of size limitation caused by the fact that the two electrodes are arranged on the same side is solved.

According to the micron-sized device module assembled by the fluid, the size of the micron-sized functional chip is reduced to 2-10 micrometers, preferably 3-5 micrometers, so that the cost for manufacturing the LED chip is greatly reduced; in addition, the intermediate substrate of the fluid-assembled micron-scale device module provided by the embodiment of the invention can be integrated with other functional modules such as color conversion, driving and the like, so that a low-cost scheme can be provided for integrated devices such as full-color display, driving and the like.

It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims

1. A micron-scale device module assembled by fluids comprises a supporting substrate and is characterized by further comprising a micron-scale device, wherein the micron-scale device comprises a micron-scale functional chip fixedly connected with an intermediary substrate, the micron-scale functional chip comprises an epitaxial structure, a first electrode and a second electrode, the first electrode and the second electrode are respectively arranged on two opposite sides of the epitaxial structure, and the first electrode is further electrically connected with a conductive layer on the intermediary substrate;

2. The fluidically assembled microscale device module of claim 1, wherein: the supporting substrate comprises a supporting substrate main body, the supporting substrate main body is provided with the mounting groove, the supporting substrate main body is provided with the circuit wiring layer, and the groove bottom surface and part of groove wall of the mounting groove are continuously covered by the first circuit wiring layer.

3. The fluidically assembled microscale device module of claim 2, wherein: each micron-scale functional chip is integrally contained in a corresponding mounting groove, the intermediary substrate is arranged outside the more than one mounting grooves, the first circuit wiring layer continuously covers the bottom surface and the side wall of the mounting groove, and the second circuit wiring layer is arranged outside the mounting groove.

4. The fluidically assembled microscale device module of claim 3, wherein: the whole micron order device of being acceptd in a corresponding mounting groove, each the mounting groove includes first recess and second recess, first recess sets up the tank bottom surface of second recess, each micron order function chip is wholly acceptd in corresponding first recess, and each intermediary's base plate is wholly acceptd in corresponding second recess, wherein, first circuit wiring layer covers in succession establishes the tank bottom surface and the lateral wall of first recess, second circuit wiring layer covers establishes the tank bottom surface of second recess.

5. The fluidly assembled microscale device module of claim 4 further comprising a plurality of microscale devices, wherein the support substrate has a plurality of mounting slots formed therein, the plurality of mounting slots being compatible with the plurality of microscale devices, each mounting slot containing at least an epitaxial structure of a corresponding one of the microscale functional chips, and wherein the second electrode of the corresponding one of the microscale functional chips is electrically connected to the first circuit-wiring layer, and wherein the second circuit-wiring layer is electrically connected to the conductive layer on the interposer substrate.

6. The fluidically assembled microscale device module of claim 5, wherein: the mounting grooves are the same in size or different in size, and the micron-sized devices are the same in type or different in type.

7. The fluidically assembled microscale device module of claim 6, wherein: the plurality of micron-sized devices comprise N types of micron-sized devices, the plurality of mounting grooves have N sizes, the nth type of micron-sized device corresponds to the mounting groove with the nth size, N is larger than or equal to 2, and N is larger than or equal to 1 and smaller than or equal to N.

8. The fluidically assembled microscale device module of claim 7, wherein: the nth type of micron-scale device comprises an nth type of micron-scale functional chip and an nth type of interposer, wherein the diameter of the second groove of the mounting groove with the nth size is larger than that of the nth type of interposer and smaller than that of the (n + 1) th type of interposer, and the diameter of the first groove of the mounting groove with the nth size is larger than that of the nth type of micron-scale functional chip and smaller than that of the (n-1) th type of micron-scale functional chip.

9. The fluidically assembled microscale device module of claim 5, wherein: the installation grooves are distributed in an array mode.

10. The fluidically assembled microscale device module of claim 9, wherein: the centers of a plurality of grooves of the plurality of mounting grooves are aligned in two directions which are arranged at an angle.

11. The fluidically assembled microscale device module of claim 10, wherein: the centers of the grooves of the mounting grooves are aligned in two mutually perpendicular directions.

12. The fluidically assembled microscale device module of claim 1, wherein: the interposer includes an interposer main body and a conductive layer, and the conductive layer is electrically connected with a solder layer, the solder layer is electrically connected with the first electrode, and the conductive layer is electrically connected with the second circuit wiring layer.

13. The fluidically assembled microscale device module of claim 12, wherein: the material of the intermediate substrate body comprises transparent glass, and the conductive layer comprises a transparent conductive layer.

14. The fluidically assembled microscale device module of claim 12, wherein: the interposer substrate further includes a color conversion module and/or a driving module.

15. The fluidically assembled microscale device module of claim 12, wherein: the micro-scale functional chip comprises an LED chip with a vertical structure.

16. The fluidically assembled microscale device module of claim 12, wherein: the diameter of the epitaxial structure is 2-10 μm.

17. The fluidically assembled microscale device module of claim 12, wherein: the diameter of the first electrode is smaller than the diameter of the epitaxial structure.

18. The method of fabricating a fluidically assembled microscale device module of any one of claims 1-17, comprising:

the manufacturing method comprises the steps of manufacturing and forming a micron-scale functional chip, manufacturing and forming an intermediate substrate and manufacturing and forming a supporting substrate, wherein the micron-scale functional chip comprises an epitaxial structure, a first electrode and a second electrode which are respectively arranged on two sides of the epitaxial structure in a back-to-back mode, a mounting groove and a circuit wiring layer are arranged on the supporting substrate, and the circuit wiring layer comprises a first circuit wiring layer and a second circuit wiring layer;

19. The manufacturing method according to claim 18, characterized by comprising:

20. The manufacturing method according to claim 18, characterized by comprising in particular:

providing a supporting substrate, wherein more than one mounting groove and circuit wiring layers are arranged on the supporting substrate, each circuit wiring layer comprises a first circuit wiring layer and a second circuit wiring layer, the micron-scale devices are transferred onto the supporting substrate, at least one corresponding micron-scale functional chip is accommodated in the mounting groove, a second electrode of the corresponding micron-scale functional chip is electrically connected with the first circuit wiring layer, and the second circuit wiring layer is electrically connected with a conductive layer on the intermediate substrate.

21. The manufacturing method according to claim 20, characterized in that: the plurality of first table-boards and the plurality of second table-boards are distributed in an array.

22. The manufacturing method according to claim 21, characterized in that: the second array of mesas has a mesa pitch that is an integer multiple of the pitch of the first array of mesas in the two angularly disposed directions.

23. The manufacturing method according to claim 22, wherein: the second mesa array has a mesa pitch that is an integer multiple of the first mesa array pitch in two mutually perpendicular directions.

24. The manufacturing method according to claim 20, characterized by comprising in particular: providing a support substrate, and processing and forming a plurality of mounting grooves distributed in an array on the support substrate;

25. The manufacturing method according to claim 24, characterized in that: the centers of a plurality of grooves of the plurality of mounting grooves are aligned in two directions which are arranged at an angle.

26. The manufacturing method according to claim 25, characterized in that: the centers of the grooves of the mounting grooves are aligned in two mutually perpendicular directions.