CN112779502A

CN112779502A - Deposition source

Info

Publication number: CN112779502A
Application number: CN202010558692.7A
Authority: CN
Inventors: 吴守贤; 鲁硕原; 朴国喆
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2019-11-05
Filing date: 2020-06-18
Publication date: 2021-05-11
Also published as: KR20210054616A

Abstract

The invention provides a deposition source. The deposition source includes: a crucible extending in one direction and having an upper side opened; a cover plate combined with the crucible and shielding the open part of the crucible; and at least one nozzle group including a plurality of unit nozzles coupled to the cover plate and arranged in an extending direction of the crucible, each unit nozzle including: a first discharge port located on the upper side; and a first nozzle flow path which connects the first discharge port and the crucible and is surrounded by the unit nozzle side wall, the first nozzle flow path including: a first lower end portion located at the lower portion; and a first upper end portion connected to and located above the first lower end portion, the first lower end portion having a uniform width, the width of the first upper end portion becoming wider as the first upper end portion approaches the first discharge port, the unit nozzle side wall including: a first outer sidewall provided at one side of the first outermost unit nozzle; a second outer sidewall provided at the other side of the second outermost peripheral unit nozzle; and a common sidewall disposed between the adjacent unit nozzles.

Description

Deposition source

Technical Field

The present invention relates to a deposition apparatus and a method of manufacturing an organic light emitting display apparatus using the same.

Background

An organic light emitting display device is a display device utilizing the following phenomenon: electrons (electrons) injected from a Cathode (Cathode) and holes (Hole) injected from an Anode (Anode) are recombined in the organic thin film to form excitons, and light of a specific wavelength is generated by energy from the formed excitons.

In the organic light emitting display device, a vacuum deposition method may be used as a method of depositing an organic substance, a metal used as an electrode, or the like. The vacuum deposition method is performed by: after a substrate on which an organic thin film is to be formed is disposed inside a vacuum chamber and a mask assembly having the same pattern as that of the thin film or the like to be formed is closely attached, a deposition substance such as an organic substance is evaporated or sublimated using a deposition source and deposited on the substrate.

The deposition material ejected from the deposition source may be diffused in various directions. The deposition substance deposited on the substrate through the transmissive portion of the mask assembly may form a pattern having an area different from that of the transmissive portion.

In the deposition pattern formed on the substrate, a shadow phenomenon in which the deposition thickness of the edge is smaller than that of the central portion may occur. Such shadowing may occur because the protruding portions of the mask assembly block the path of the deposited material. When the shadow phenomenon occurs, the pattern of the deposition substance may be different from the design pattern, and a problem of a weakened degree of light emission may occur, so that a display device having uniform quality may not be manufactured.

Disclosure of Invention

The present invention has been made in an effort to provide a deposition apparatus that provides improved deposition uniformity and deposition efficiency by minimizing a shadow phenomenon, and a method of manufacturing an organic light emitting display device using the same.

The problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned will be clearly understood from the following description by those skilled in the art.

A deposition source of an embodiment for solving the above problems includes: a crucible extending in one direction and having an upper side opened; a cover plate combined with the crucible for shielding an open portion of the crucible; and at least one nozzle group including a plurality of unit nozzles coupled to the cover plate and arranged in an extending direction of the crucible, each of the unit nozzles including: a first discharge port located on the upper side; and a first nozzle flow path connecting the first discharge port and the crucible and surrounded by a unit nozzle side wall, the first nozzle flow path including: a first lower end portion located at the lower portion; and a first upper end portion connected to and located above the first lower end portion, the first lower end portion having a uniform width, the first upper end portion having a wider width as it approaches the first discharge opening, the unit nozzle sidewall including: a first outer sidewall provided at one side of a first outermost unit nozzle, the first outermost unit nozzle being a unit nozzle located at one outer side among the plurality of unit nozzles within the nozzle group; a second outer sidewall provided at the other side of a second outermost unit nozzle, the second outermost unit nozzle being a unit nozzle located at the other outer side among the plurality of unit nozzles; and a common sidewall disposed between adjacent ones of the unit nozzles.

The plurality of unit nozzles within the nozzle group may be integrated by the common sidewall.

The deposition source may further include a plurality of stand-alone nozzles coupled to the cover plate, the stand-alone nozzles including: a second discharge port located on the upper side; and a second nozzle flow path which connects the second discharge port and the crucible and is surrounded by isolated nozzle sidewalls, the isolated nozzle sidewall of each of the isolated nozzles being spaced apart from the isolated nozzle sidewalls of the other isolated nozzles and the unit nozzle sidewalls of the nozzle group.

The second nozzle flow path may include: a second lower end portion located at the lower portion; and a second upper end portion connected to and located above the second lower end portion, the second lower end portion having a uniform width, the second upper end portion having a wider width as it approaches the second discharge opening.

The deposition source may include a first outer region located at one side and a second outer region located at the other side with respect to a center of the extension direction of the crucible, and the nozzle group and the isolated nozzle may be disposed in the first outer region and the second outer region, respectively.

The isolated nozzles and the nozzle groups may be arranged in a symmetrical shape with respect to a center of the extension direction of the crucible.

Another embodiment of a deposition source for solving the above problems includes: a crucible extending in one direction and having an upper side opened; a cover plate combined with the crucible for shielding an open portion of the crucible; and a plurality of nozzles coupled to the cover plate and arranged in an extending direction of the crucible, each of the nozzles including: an outlet port located on the upper side; and a nozzle flow path connecting the discharge port and the crucible and surrounded by a nozzle side wall, the nozzle flow path including: a lower end portion located at the lower portion; and an upper end portion connected to and positioned above the lower end portion, the lower end portion having a uniform width, the upper end portion having a wider width as it approaches the discharge opening, at least some of the plurality of nozzles sharing the nozzle side wall between adjacent nozzles to form an integrated nozzle group.

The angle formed by the lower end portion of each nozzle and the normal line of the cover plate may be increased or maintained as it moves from the center of the crucible in the extending direction toward the outside.

An angle formed by the lower end portions of the nozzles within a single nozzle group and a normal line of the cap plate may be uniform.

The interval between the nozzles within the nozzle group may be smaller than the interval between the nozzles that do not constitute the nozzle group.

Specifics of other embodiments are included in the detailed description and the drawings.

According to the deposition apparatus of an embodiment, it is possible to provide a deposition apparatus including a deposition source that forms a nozzle group by a set of a plurality of nozzles, thereby improving the degree of integration of the nozzles.

According to a deposition apparatus of an embodiment, it is possible to provide a deposition apparatus that improves deposition uniformity and deposition efficiency by minimizing a shadow phenomenon, and a method of manufacturing an organic light emitting display apparatus using the same.

Effects of the embodiments of the present invention are not limited to the above exemplified ones, and more various effects are included in the present specification.

Drawings

Fig. 1 is a schematic cross-sectional view of a deposition apparatus of an embodiment.

FIG. 2 is a cross-sectional view schematically illustrating a relationship of a nozzle of a deposition source to a mask assembly of an embodiment.

FIG. 3 is a perspective view of a deposition source according to one embodiment.

Fig. 4 is a sectional view taken along IV-IV' of fig. 3.

FIG. 5 is a cross-sectional view of a nozzle of a deposition source according to one embodiment.

FIG. 6 is a cross-sectional view of a nozzle group of a deposition source of an embodiment.

Fig. 7 is a view schematically showing a deposition material ejection condition of the deposition apparatus of the embodiment.

Fig. 8 is a sectional view of a deposition apparatus according to another embodiment.

Fig. 9 is a sectional view of a nozzle group of a deposition apparatus according to still another embodiment.

Fig. 10 is a sectional view of a nozzle group of a deposition apparatus according to still another embodiment.

Fig. 11 is a sectional view of a nozzle group of a deposition apparatus according to still another embodiment.

Fig. 12 is a sectional view of a nozzle group of a deposition apparatus according to still another embodiment.

Fig. 13 is a sectional view of a nozzle group of a deposition apparatus according to still another embodiment.

Fig. 14 to 16 are sectional views of process steps of a method of manufacturing an organic light emitting display device using a deposition apparatus of an embodiment.

Detailed Description

The advantages, features and methods of accomplishing the same of the present invention will become apparent with reference to the following detailed description of the embodiments when taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms different from each other, and the embodiments are provided only for completeness of disclosure of the present invention and completeness of informing the scope of the present invention to those skilled in the art to which the present invention pertains, and the present invention is limited only by the scope of the claims.

The term "elements" or "layers on" another element or layer includes the case where the element or layer is directly on the other element or layer and the case where the other layer or element is provided in the middle. Like reference numerals refer to like elements throughout the specification.

Although the first, second, etc. are used to describe various structural elements, it goes without saying that these structural elements are not limited to these terms. These terms are only used to distinguish one structural element from another. Therefore, the first constituent element mentioned below may be a second constituent element within the technical idea of the present invention.

The embodiments are described below with reference to the drawings.

Referring to fig. 1, a deposition apparatus 1 of an embodiment may include: a chamber 100; a deposition source 200 disposed inside the chamber 100 and having at least one isolated nozzle 220 and a nozzle group 230 (see fig. 2); a substrate holder 110 disposed to be spaced apart from and opposite to the deposition source 200; and a mask assembly 130 disposed between the substrate holder 110 and the deposition source 200.

The chamber 100 may provide a space in which a deposition process is performed, and the inside of the chamber 100 may be maintained as a vacuum during the deposition process. Here, the vacuum may refer to maintaining the pressure inside the chamber 100 in a low pressure state.

The chamber may further comprise: a carry-out/carry-in port (not shown) for carrying out and carrying in the substrate 120; a vacuum pump (not shown) and an exhaust port (not shown) connected to the vacuum pump for controlling the pressure inside the chamber 100 and exhausting evaporated substances not deposited on the substrate 120.

The substrate 120 may be an insulating substrate, a semiconductor substrate, a display device substrate, or the like, but is not limited thereto. In this embodiment, a substrate 120 used in an organic light emitting display device will be described as an example.

A desired structure may be formed on the substrate 120 through a deposition process. The structure formed on the substrate 120 through the deposition process may be various according to the manufacturing process of the organic light emitting display device. For example, in the hole injection layer forming process, a pixel defining film and an anode electrode may be formed on the substrate 120, and in the organic light emitting layer forming process, not only the pixel defining film and the anode electrode but also a hole injection layer and/or a hole transport layer may be formed on the substrate 120.

The substrate holder 110 and the fixing member 140 may be disposed inside the chamber 100. The substrate holder 110 may function to dispose the substrate 120 carried into the chamber 100. In one embodiment, the substrate holder 110 may be disposed at an upper side inside the chamber 100, and the substrate 120 may be disposed at a lower side of the substrate holder 110 at the upper side inside the chamber 100.

The substrate holder 110 may include a substance having magnetism. For example, when the mask assembly 130 made of metal is used, the substrate holder 110 may have magnetism, so that the substrate holder 110 and the mask assembly 130 may be easily fixed. Specifically, the substrate holder 110 may include a magnet having a magnetic force, an electromagnet, or the like.

In addition, the fixing member 140 may assist the fixing of the substrate 120. Further, the fixing member 140 may assist the fixing of the mask assembly 130 while serving to maintain a constant distance between the mask assembly 130 and the substrate 120. Such a fixing member 140 may be formed of a frame structure that can be separately installed.

The mask assembly 130 may define an area where the material evaporated from the deposition source 200 is deposited. The mask assembly 130 may include a mask portion 130a, a transmissive portion 130b, and mask sidewalls 130c (see fig. 7).

The mask portion 130a may cover the substrate 120 to prevent deposition of the evaporated substance from the deposition source 200 at the corresponding region. The transmission part 130b is a region where the substrate 120 is exposed, and the substance evaporated from the deposition source 200 may be deposited in the region of the substrate 120 exposed by the transmission part 130 b. Accordingly, the substances evaporated from the deposition source 200 may be formed into a desired pattern by the mask assembly 130 and deposited on the substrate 120. The mask sidewall 130c is located at an edge region of the mask assembly 130, and prevents the evaporated material from diffusing to a region other than the substrate 120.

The mask assembly 130 may include an entire mask such as a Fine Metal Mask (FMM) or a plurality of divided masks, but is not limited thereto. The mask assembly 130 may be disposed and fixed adjacent to the substrate 120, and the interval between the mask assembly 130 and the substrate 120 may be adjusted by the substrate holder 110 and the fixing member 140.

The deposition source 200 may provide a deposition material DM (see fig. 4). The deposition source 200 may be located inside the chamber 100 and designed to be opposite to the substrate 120. In an exemplary embodiment, when the substrate holder 110, on which the substrate 120 is disposed, is disposed at an upper side inside the chamber 100, the deposition source 200 may be disposed at a lower side inside the chamber 100.

The deposition source 200 may extend entirely along the first direction DR1 and be configured in a line shape, but is not limited thereto. The width of the deposition source 200 in the first direction DR1 may cover the width of the substrate 120 in the first direction DR 1. Here, the width of the deposition source 200 covering the width of the substrate 120 means that the deposition source 200 covers all regions of the substrate 120 in the width direction where the deposition substance DM is to be deposited, and thus all deposition regions of the substrate 120 located in the first direction DR1 may be covered even if the deposition source 200 does not move in the first direction DR 1.

The width and the detailed structure of the deposition source 200 in the first direction DR1 will be described in further detail later.

The deposition source 200 may include: a crucible 205 extending in a first direction DR1 and having an upper side opened; a cover plate 210 coupled to the crucible 205 and shielding an open portion of the crucible 205; a plurality of isolated nozzles 220 and/or nozzle groups 230 combined with the cap plate 210 and arranged in a first direction DR1 which is an extension direction of the crucible 205; a heater 240 provided at a side of the crucible 205 at a desired distance and heating the crucible 205; and a case 300 accommodating the heater 240.

The crucible 205 is disposed inside the housing 300, and the deposition material DM may be disposed inside the crucible 205. In an exemplary embodiment, the deposition material DM may be an organic material for an organic light emitting layer. Specifically, the deposition substance DM may be an organic substance used for a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer, but is not limited thereto, and various substances may be used as the deposition substance DM. Further, the crucible 205 may also include a plurality of organic substances different from each other.

The crucible 205 may be designed to have a shape corresponding to the deposition source 200. In an exemplary embodiment, when the deposition source 200 is a linear deposition source 200 having a linear shape, the crucible 205 may also have a linear shape accordingly.

A plurality of partition walls (not shown) for separating the inner space of the crucible 205 may be provided inside the crucible 205 so that the deposition material DM is not stored in one direction.

The interior of the crucible 205 may develop high temperatures. Therefore, the crucible 205 can be formed of a material having a characteristic of low thermal expansion coefficient at high temperature. In an exemplary embodiment, the crucible 205 may include chromium (Cr), molybdenum (Mo), platinum (Pt), tungsten (W), titanium (Ti), or the like, but is not limited as long as it is a material having a characteristic of low thermal expansion coefficient at high temperature.

The crucible 205 may be in an open-top form. That is, the crucible 205 may be formed of a bottom and a sidewall. A cover plate 210 may be provided on the open upper portion of the crucible 205. The cover plate 210 may include a plurality of stand alone nozzles 220 and a nozzle group 230. The respective isolated nozzles 220 and the nozzle groups 230 may be arranged at intervals along the first direction DR1, which is the extending direction of the crucible 205.

The region of the cover plate 210 other than the region where the isolated nozzle 220 is disposed may be disposed in a form of covering the upper portion of the crucible 205, thereby blocking the deposition material DM from leaking to the region other than the isolated nozzle 220 and the nozzle group 230. Therefore, the deposition material DM inside the crucible 205 can be moved to the outside of the crucible 205 through the isolated nozzle 220 and the nozzle group 230 provided on the cover plate 210.

The heater 240 may be disposed proximate to an outer wall of the crucible 205. The heater 240 may generate radiant heat and provide the radiant heat to the crucible 205. The deposition material DM located inside the crucible 205 may be vaporized by the radiant heat provided from the heater 240.

In one embodiment, the heater 240 may be configured to be spaced apart from the outer wall of the crucible 205 and to surround the crucible 205. The heater 240 may be provided to be fixed to an inner sidewall of the housing 300, or may be provided to be fixed between the housing 300 and the crucible 205.

A transfer device may be provided at the lower portion of the crucible 205. The transfer device may move the crucible 205 in a second direction DR2 perpendicular to the first direction DR1, so that the deposition source 200 may cover the entire substrate 120.

Specifically, the transfer device may include a ball screw 170, a driving motor 160 for rotating the ball screw 170, and a guide rail 150 for controlling the moving direction of the housing 300.

The ball screw 170 may use a bidirectional motor as the driving motor 160 so that the ball screw 170 is rotated bidirectionally by the rotation of the driving motor 160. Specifically, the ball screw 170 is screw-coupled to one side of the housing 300, and the deposition source 200 is bidirectionally moved in the second direction DR2 by the screw rotation.

For example, when the deposition process is performed from the other side end of the second direction DR2, the movement speed of the housing 300 is adjusted by adjusting the rotation speed of the driving motor 160, and the deposition process of the substrate 120 is completed when the crucible 205 reaches one side end of the second direction DR 2. Next, when the substrate 120 after the deposition is carried out to the outside of the chamber 100 and a new substrate is carried in to the inside of the chamber 100, the new substrate may be subjected to the deposition process by moving the crucible 205 positioned at one side end of the second direction DR2 to the other side end of the second direction DR2 again by the reverse rotation of the driving motor 160.

At least two guide rails 150 may be provided in a lower portion of the housing 300 in a traveling direction of the housing 300, whereby the housing 300 and the crucible 205 accommodated in the housing 300 may travel in parallel along the guide rails 150.

In forming the pair of guide rails 150, the pair of guide rails 150 may be made to support both side corners of the housing 300 with respect to the traveling direction, or another roller (not shown) may be further provided on the bottom surface of the housing 300 and made to travel along the guide rails 150.

FIG. 2 is a cross-sectional view schematically illustrating a relationship of a nozzle of a deposition source to a mask assembly of an embodiment. FIG. 3 is a perspective view of a deposition source according to one embodiment.

Referring to fig. 2 and 3, a deposition apparatus 1 of an embodiment may include a mask assembly 130 and a deposition source 200 spaced apart from a lower portion of the mask assembly 130 and disposed opposite the mask assembly 130.

The substrate 120 may be combined with the mask assembly 130 and disposed on the upper portion of the deposition source 200. The mask assembly 130 may be positioned between the substrate 120 and the deposition source 200. The mask assembly 130 may be disposed and fixed adjacent to the substrate 120, and the interval between the mask assembly 130 and the substrate 120 may be adjusted by the substrate holder 110 and the fixing member 140.

The deposition source 200 may include: a crucible 205; a cover plate 210 disposed at an upper portion of the crucible 205; the stand-alone nozzles 220; and a nozzle group 230. The deposition source 200 may have a line type shape extending along the first direction DR 1. The deposition source 200 may include a line type crucible 205 extending along the first direction DR1 corresponding to the shape of the deposition source 200. But not limited thereto, the deposition source 200 may include a plurality of crucibles 205 in the first direction DR1, in which case partition walls may be disposed between the crucibles 205.

The crucible 205 may be configured to be exposed at an upper portion and to accommodate the deposition material DM inside. The inner space of the crucible 205 may be defined by an upper surface of a bottom surface portion of the crucible 205 and an inner side surface of a sidewall of the crucible 205. The crucible 205 may be disposed to be longer than the mask assembly 130 when viewed in the first direction DR1, and protrude outward from the mask assembly 130. In addition, the deposition source 200 may also be disposed to be longer than the mask assembly 130.

The cover plate 210 may be disposed at an upper portion of the crucible 205, and may be a flat plate covering an open portion of the crucible 205. An isolated nozzle 220 or a nozzle group 230 may be combined on the cap plate 210. A front reflection film (not shown) may be disposed on the cover plate 210, and may reflect heat generated from an upper portion of the deposition source 200 during a deposition process. The temperature of the deposition source 200 may be appropriately maintained by reflecting heat generated from an upper portion of the deposition source 200 by a front reflection film (not shown). The front reflection film (not shown) may include aluminum or silver having excellent reflectivity as a constituent material, but is not limited thereto.

The deposition source 200 may be divided into a center area CA, a first outer area SA1, and a second outer area SA 2. The central area CA is defined by an interval between the first center point CP1 and the second center point CP 2. When the outermost peripheral portions LP1 and LP2 of the transmissive portion 130b of the mask assembly 130 and the cover plate 210 are connected by arbitrary lines L1 and L2, respectively, with reference to the minimum incident angle θ k at which the deposition substance DM is incident, the first and second center points CP1 and CP2 may be referred to as portions where the respective arbitrary lines L1 and L2 meet the cover plate 210 of the deposition source 200.

The above-mentioned minimum incident angle θ k may be determined from the viewpoints of the shadowing phenomenon and deposition efficiency. Specifically, when the minimum incident angle θ k at which the deposition substance DM is incident is less than the first angle, a shadow phenomenon in which the deposition substance DM penetrates between the mask assembly 130 and the substrate 120 may be induced, and when the minimum incident angle θ k at which the deposition substance DM is incident is greater than the second angle, the deposition efficiency may be decreased due to a small amount of the incident deposition substance DM.

Therefore, the minimum incident angle θ k may be set to values within the first and second angle ranges that may secure deposition efficiency while suppressing the shadow phenomenon. The first angle and the second angle for determining the range of the minimum incident angle θ k may be determined in various ways according to the distance between the substrate 120 and the deposition source 200, the size of the substrate 120, the deposition substance DM, the deposition amount, and the like. In an exemplary embodiment, the first angle may be set to 43 °, the second angle may be set to 53 °, and the minimum incident angle θ k may be set in a range of 43 ° to 53 °, but is not limited thereto.

The first outer area SA1 is defined by an area between the first center point CP1 and the other side end of the deposition source 200 in the first direction DR 1. The second outer region SA2 is defined by an interval between the second center point CP2 and one side end of the deposition source 200 in the first direction DR 1. A plurality of isolated nozzles 220 and nozzle groups 230 may be provided on the cap plate 210 corresponding to the central area CA, the first outer area SA1, and the second outer area SA 2.

Fig. 4 is a sectional view taken along IV-IV' of fig. 3. FIG. 5 is a cross-sectional view of an isolated nozzle of a deposition source of an embodiment. FIG. 6 is a cross-sectional view of a nozzle group of a deposition source of an embodiment. Fig. 7 is a view schematically showing a deposition material ejection condition of the deposition apparatus of the embodiment.

Referring to fig. 4 to 7, the isolated nozzle 220 may include a discharge port OL on the upper side and a nozzle flow path FP connecting the discharge port OL and the crucible 205. The discharge port OL is an ejection port opened upward, and the deposition material DM can be discharged to the outside through the discharge port OL. The nozzle flow path FP may be a hollow tube between the discharge port OL and the crucible 205, and is a path through which the deposition material DM moves.

The nozzle sidewall SW may be defined as a wall surrounding an inner space of the isolated nozzle 220. The nozzle sidewall SW may surround the nozzle flow path FP. The nozzle sidewall SW may provide an inner sidewall of the stand alone nozzle 220. The nozzle side wall SW may be provided in a form in which a side surface of a lower end portion of the nozzle side wall SW meets the cap plate 210 in a horizontal direction. A portion of the lower end of the nozzle sidewall SW may overlap the cap plate 210 in the horizontal direction. The lower surface of the nozzle sidewall SW may be exposed to the inner space of the crucible 205. The lower surfaces of the nozzle side walls SW and the cover plate 210 may be aligned in a horizontal direction. The outer surface of the nozzle sidewall SW may be curvedly coupled to the upper surface of the cap plate 210.

The nozzle flow path FP may include: a lower nozzle lower end 220 b; and a nozzle upper end portion 220a connected to the nozzle lower end portion 220b and positioned above the nozzle lower end portion 220 b. The nozzle lower end portion 220b may have a uniform width. The closer to the discharge port OL, the wider the width of the nozzle upper end portion 220a may become.

Specifically, the width W2 of the nozzle lower end portion 220b perpendicular to the extending direction of the nozzle lower end portion 220b may be constant throughout the entire section of the nozzle lower end portion 220 b. The width W1 of the nozzle upper end portion 220a perpendicular to the direction in which the nozzle lower end portion 220b extends may constantly increase from the boundary between the nozzle upper end portion 220a and the nozzle lower end portion 220b toward the discharge port OL side. In an exemplary embodiment, the width W2 of the nozzle lower end portion 220b may be about 9.5mm, and the width W1 of the ejection opening OL may be about 22mm, but is not limited thereto.

The ejection line SL may be defined as a straight line passing through the central portion of the nozzle flow path FP in the extending direction of the nozzle lower end portion 220 b. The ejection line SL may be perpendicular to a plane including the ejection port OL. The ejection line SL may pass through the ejection orifice center OP. The cross section of the nozzle flow path FP perpendicular to the spray line SL may be circular. The ejection line SL may pass through the center of the cross section of the nozzle flow path FP.

The length of the stand alone nozzle 220 may be defined as the sum of the nozzle upper end length l1 and the nozzle lower end length l 2. Nozzle upper end length l1 may be defined as the distance between the center HP of the boundary of nozzle upper end 220a and nozzle lower end 220b and the discharge orifice center OP. The nozzle lower end portion length l2 may be defined as the length of the shortest path from the boundary of the nozzle upper end portion 220a and the nozzle lower end portion 220b to the lower surface of the nozzle side wall SW along the inner side surface of the nozzle side wall SW.

The nozzle upper end length l1 and nozzle lower end length l2 may have a ratio of 1:1 with a tolerance in the range of 10%. In an exemplary embodiment, the nozzle upper end length l1 and the nozzle lower end length l2 may be approximately 16mm, respectively, but are not limited thereto and may have a length of 15mm to 17 mm.

The height of the isolated nozzle 220 may be defined as the vertical distance from the lower surface of the nozzle sidewall SW to the orifice center OP. The inclination angle θ of the isolated nozzle 220 may be defined as an angle at which the spray line SL is inclined with respect to a vertical line VL that is an imaginary line extending in the third direction DR 3. Further, the inclination angle θ of the isolated nozzle 220 may also be defined as an angle formed by the nozzle lower end portion 220b and the normal line of the cap plate 210.

The nozzle group 230 may include the first nozzle NZ1 through the fifth nozzle NZ5 as unit nozzles. Each unit nozzle may have the same structure as the isolated nozzle 220. That is, each unit nozzle may include: discharge ports OL1 to OL5 located on the upper side; and a nozzle flow path connecting the discharge ports OL1 to OL5 and the crucible 205 and surrounded by the unit nozzle side walls IW1, IW2, SW1 to SW 4. The nozzle flow path of each unit nozzle may include a unit nozzle lower end portion located at a lower portion and a unit nozzle upper end portion located at an upper portion of the unit nozzle lower end portion. The unit nozzle lower end portions may have a uniform width. The closer to the discharge ports OL1 to OL5, the wider the width of the upper end of the unit nozzle may become.

In the embodiment of fig. 6, the nozzle group 230 including five unit nozzles is illustrated, but is not limited thereto, and the nozzle group 230 may include two, three, or various numbers of unit nozzles.

The unit nozzles of the nozzle group 230 may be surrounded by unit nozzle sidewalls. The unit nozzle sidewalls may include a first independent sidewall IW1, a second independent sidewall IW2, a first common sidewall SW1 to a fourth common sidewall SW 4.

A first nozzle NZ1 may be disposed at one outer side of the first direction DR1 among the plurality of unit nozzles within the nozzle group 230. A first independent sidewall IW1 may be provided at one side of the first nozzle NZ 1. A fifth nozzle NZ5 may be disposed at the other outer side of the first direction DR1 among the plurality of unit nozzles within the nozzle group 230. A second independent sidewall IW2 may be provided at the other side of the fifth nozzle NZ 5. First to fourth common sidewalls SW1 to SW4 may be disposed between adjacent unit nozzles among the plurality of unit nozzles within the nozzle group 230.

The plurality of unit nozzles within the nozzle group 230 may be integrated by the first to fourth common sidewalls SW1 to SW 4.

Specifically, the first nozzle NZ1 may be surrounded by a first independent sidewall IW1 and a first common sidewall SW1, the first common sidewall SW1 being disposed apart from the first independent sidewall IW1 on one side of the first direction DR 1. The outer side of the first independent sidewall IW1 may be perpendicularly attached to the upper surface of the cover plate 210. The upper surface of the first common side wall SW1 may include a step shape having a height difference, which is the distance between the plane including the discharge opening OL1 of the first nozzle NZ1 and the plane including the discharge opening OL2 of the second nozzle NZ 2.

The second nozzle NZ2 adjacent to the first nozzle NZ1 on one side of the first direction DR1 may be surrounded by a first common sidewall SW1 and a second common sidewall SW2, and the second common sidewall SW2 is disposed spaced apart from the first common sidewall SW1 on one side of the first direction DR 1. The upper surface of the second common side wall SW2 may include a step shape having a height difference, which is a distance between a plane including the discharge port OL2 of the second nozzle NZ2 and a plane including the discharge port OL3 of the third nozzle NZ 3.

The third nozzle NZ3 adjacent to the second nozzle NZ2 on one side of the first direction DR1 may be surrounded by the second common sidewall SW2 and the third common sidewall SW3, and the third common sidewall SW3 may be disposed apart from the second common sidewall SW2 on one side of the first direction DR 1. The upper surface of the third common side wall SW3 may include a step shape having a height difference, which is a distance between a plane including the discharge port OL3 of the third nozzle NZ3 and a plane including the discharge port OL4 of the fourth nozzle NZ 4.

The fourth nozzle NZ4 adjacent to the third nozzle NZ3 on the side of the first direction DR1 may be surrounded by a third common sidewall SW3 and a fourth common sidewall SW4, and the fourth common sidewall SW4 may be disposed apart from the third common sidewall SW3 on the side of the first direction DR 1. The upper surface of the fourth common side wall SW4 may include a step shape having a height difference, which is a distance between a plane including the discharge port OL4 of the fourth nozzle NZ4 and a plane including the discharge port OL5 of the fifth nozzle NZ 5.

The fifth nozzle NZ5 adjacent to the fourth nozzle NZ4 on one side of the first direction DR1 may be surrounded by a fourth common sidewall SW4 and a second independent sidewall IW2, the second independent sidewall IW2 being disposed apart from the fourth common sidewall SW4 on one side of the first direction DR 1. The outer side of the second independent sidewall IW2 may be attached to the upper surface of the cover 210.

That is, the first independent sidewall IW1 may provide an inner sidewall of the first nozzle NZ 1. The first common sidewall SW1 may provide an inner sidewall of the first nozzle NZ1 and the second nozzle NZ 2. The second common sidewall SW2 may provide an inner sidewall of the second nozzle NZ2 and the third nozzle NZ 3. The third common sidewall SW3 may provide an inner sidewall of the third nozzle NZ3 and the fourth nozzle NZ 4. The fourth common sidewall SW4 may provide an inner sidewall of the fourth nozzle NZ4 and the fifth nozzle NZ 5. The second independent sidewall IW2 may provide an inner sidewall of the fifth nozzle NZ 5.

The lower ends of the first independent sidewall IW1, the second independent sidewall IW2 and the first through fourth common sidewalls SW1 through SW4 may be designed to be connected to the cover plate 210 in the horizontal direction. The lower ends of the first independent sidewall IW1, the second independent sidewall IW2 and the first through fourth common sidewalls SW1 through SW4 may overlap the cover plate 210 in the horizontal direction. The lower surfaces of first independent sidewall IW1, second independent sidewall IW2 and first through fourth common sidewalls SW1 through SW4 and the lower surface of cover plate 210 may be aligned in a horizontal direction.

The sidewall SW of the isolated nozzle 220 and the sidewall SW of the adjacent other isolated nozzle 220 may be disposed apart from each other, and a cap plate 210 may be disposed therebetween. The sidewall SW of the isolated nozzle 220 and the sidewall of the unit nozzle of the adjacent other nozzle group 230 may be disposed apart from each other, and a cap plate 210 may be disposed therebetween. However, the nozzle group 230 is formed and the adjacent unit nozzles are not provided with the side walls SW apart like the isolated nozzle 220, but may share the common side walls SW1 to SW 4.

The inclination angles θ 1 to θ 5 of the respective unit nozzles of the nozzle group 230 may be defined as angles formed by the lower end portions of the respective unit nozzles and the normal line of the cap plate 210. The first to fifth nozzles NZ1 to NZ5, which are unit nozzles constituting the nozzle group 230, may be designed to be inclined in the same direction. The inclination angles θ 1 to θ 5 of the first to fifth nozzles NZ1 to NZ5 may be the same or similar. In an exemplary embodiment, the difference between the inclination angles θ 1 to θ 5 of the first to fifth nozzles NZ1 to NZ5 constituting one nozzle group 230 may be 2 ° or less, but is not limited thereto.

The discharge ports OL1 to OL5 of the first to fifth nozzles NZ1 to NZ5 may be designed to be inclined at inclination angles θ 1 to θ 5 of the respective nozzles with respect to a horizontal plane extending in the first and second directions DR1 and DR 2. The ejection ports OL1 to OL5 of the first to fifth nozzles NZ1 to NZ5 may be located on different planes from each other.

The interval between the adjacent isolated nozzles 220 may be defined as a distance between nozzle points NP that are portions where the respective spray lines SL meet the crucible 205. The interval between the adjacent isolated nozzles 220 may be the same as the interval between the respective nozzle lower ends 220 b.

The separation distances d1 to d4 between the first to fifth nozzles NZ1 to NZ5 forming the nozzle group 230 may be defined as distances between the respective nozzle points NP1 to NP 5. The interval between the unit nozzles of the nozzle group 230 may be the same as the interval between the lower end portions of the respective unit nozzles.

Specifically, the distance between the first nozzle NZ1 and the second nozzle NZ2 may be defined as a distance d1 between a nozzle point NP1 of the first nozzle NZ1 and a nozzle point NP2 of the second nozzle NZ2, the distance between the second nozzle NZ2 and the third nozzle NZ3 may be defined as a distance d2 between a nozzle point NP2 of the second nozzle NZ2 and a nozzle point NP3 of the third nozzle NZ3, the distance between the third nozzle NZ3 and the fourth nozzle NZ4 may be defined as a distance d4 between a nozzle point NP4 of the third nozzle NZ4 and a nozzle point NP4 of the fourth nozzle NZ4, and the distance between the fourth nozzle NZ4 and the fifth nozzle NZ4 may be defined as a distance d4 between a nozzle point NP4 of the fourth nozzle NZ4 and a nozzle point NP4 of the fifth nozzle NZ 4.

The separation distances d1 to d4 between the nozzle points NP1 to NP5 at which the respective ejection lines S1 to SL5 forming the first to fifth nozzles NZ1 to NZ5 of the nozzle group 230 meet the crucible 205 may be smaller than the separation distance between the nozzle points NP of the isolated nozzle 220. The separation distances d1 to d4 between the nozzle points NP1 to NP5 of the nozzle group 230 may be varied according to the shapes of the respective unit nozzles NZ1 to NZ5, the diameters of the discharge ports OL1 to OL5, and the like.

If the separation distances d1 to d4 between the nozzle points NP1 to NP5 of the nozzle group 230 are large, it may be difficult to properly maintain the temperature of the deposition source 200 due to a reduction in the area where the front reflection film (not shown) is disposed.

The separation distances d1 to d4 between the nozzle points NP1 to NP5 of the nozzle group 230 may have the same separation distance (d1 ═ d2 ═ d3 ═ d 4).

One deposition source 200 may be formed with a plurality of nozzle groups 230. Different isolated nozzles 220 may be provided between the nozzle groups 230 different from each other, but not limited thereto.

Next, the arrangement of the isolated nozzles 220 and the nozzle groups 230 in the central area CA, the first outer area SA1, and the second outer area SA2 of the deposition source 200 will be described.

An isolated nozzle 220 may be disposed in the central region CA of the deposition source 200. In the first and second outer areas SA1 and SA2, the isolated nozzles 220 and the nozzle groups 230 may be disposed.

The isolated nozzles 220 disposed in the central region CA may be disposed to be inclined toward an outer direction of the deposition source 200. But is not limited thereto and may be disposed toward an inner direction of the deposition source 200 or toward a third direction DR3 from the deposition source 200 to the mask assembly 130. The inclination angle θ of each of the isolated nozzles 220 disposed in the central area CA may be different. However, the inclination angle θ is not limited to this and may be the same.

The insular nozzles 220 and the nozzle groups 230 disposed in the first and second outer regions SA1 and SA2 may be inclined toward the outside of the deposition source 200. Specifically, the nozzle lower ends 220b of the insular nozzles 220 and the lower ends of the unit nozzles of the nozzle group 230, which are disposed in the first and second outer regions SA1 and SA2, may be inclined toward the outside of the deposition source 200. But is not limited thereto and may be disposed toward an inner direction of the deposition source 200 or toward a third direction DR3 from the deposition source 200 to the mask assembly 130. The inclination angles θ of the individual insulated nozzles 220 and the nozzle groups 230 provided in the first and second outside areas SA1 and SA2 may be different. However, the inclination angle θ is not limited to this and may be the same.

The respective insular nozzles 220 and nozzle groups 230 disposed in the first and second outside areas SA1 and SA2 may be disposed to be more inclined toward the outside of the deposition source 200. That is, the inclination angle θ of each of the insulated nozzles 220 provided in the first and second outer areas SA1 and SA2 may become large or constant as it moves from the center area CA toward the outside. However, the present invention is not limited to this, and the isolated nozzles 220 and the nozzle groups 230 provided in the first and second outer regions SA1 and SA2 may be inclined so as to be parallel to each other.

The nozzle group 230 may be disposed in the first and second outer regions SA1 and SA 2. In an exemplary embodiment, one nozzle group 230 may be disposed in the first and second outer regions SA1 and SA2 of the deposition source 200 on the side of the central region CA of the deposition source 200 and on the outer side of the deposition source 200, respectively. The inclination angle, height, etc. of the nozzle group 230 positioned at the center area CA side of the deposition source 200 and the nozzle group 230 positioned at the outer side of the deposition source 200 may be different. In the exemplary embodiment, the nozzle group 230 located at the center area CA side of the deposition source 200 has a smaller inclination angle and a lower height than the nozzle group 230 located at the outer side of the deposition source 200, but is not limited thereto. The inclination angle θ of the nozzle groups 230 provided in the first and second outer areas SA1 and SA2 may become large or constant as moving toward the outside from the center area CA.

Between the nozzle groups 230, isolated nozzles 220 may be further disposed. In an exemplary embodiment, four isolated nozzles 220 may be disposed between two nozzle groups 230, but is not limited thereto.

The deposition source 200 may be disposed to form plane symmetry with reference to a symmetry plane SP defined as an imaginary plane bisecting the deposition source 200 and perpendicular to the first direction DR 1.

In an exemplary embodiment, the deposition source 200 may have a length of about 1030mm in the first direction DR 1.

Specifically, the isolated nozzles 220 having an inclination angle of about 5 ° may be provided at positions spaced apart by about 28mm from the symmetry plane SP toward one side and the other side of the first direction DR 1.

The nozzle group 230 may be disposed in an area spaced apart from one side and the other side of the first direction DR1 by about 64mm to 183mm from the symmetry plane SP, the nozzle group 230 may include unit nozzles having an inclination angle of about 8 ° at locations spaced apart from one side and the other side of the first direction DR1 from the symmetry plane SP, and may include unit nozzles having an inclination angle of about 10 ° at locations spaced apart from one side and the other side of the first direction DR1 by about 95mm, 126mm, 155mm, 183mm from the symmetry plane SP. That is, the inclination angle of the nozzle group 230 may be 8 ° to 10 °, and the interval of the lower end portions of the respective unit nozzles within the nozzle group 230 may be 28mm to 32 mm.

The insular nozzles 220 having an inclination angle of about 18 ° may be respectively provided at a portion spaced apart by about 222mm and a portion spaced apart by about 282mm from one side and the other side of the first direction DR1 from the symmetry plane SP.

The insular nozzles 220 having an inclination angle of about 20 ° may be respectively provided at a portion spaced apart from the symmetry plane SP by about 332mm to one side and the other side of the first direction DR1 and a portion spaced apart from about 375.

The nozzle group 230 may be disposed in an area spaced apart from one side and the other side of the first direction DR1 by about 411mm to 515mm from the symmetry plane SP, and the nozzle group 230 may include unit nozzles having an inclination angle of about 20 ° at locations spaced apart from one side and the other side of the first direction DR1 by about 411mm, 437mm, 463mm, 489mm, 515mm from the symmetry plane SP. That is, the inclination angle of the nozzle group 230 may be 18 ° to 22 °, and the interval of the lower end portions of the respective unit nozzles within the nozzle group 230 may be 25mm to 27 mm.

The deposition apparatus 1 of an embodiment can improve the straightness of the deposition material DM by including the isolated nozzle 220, the isolated nozzle 220 including the nozzle flow path FP in which the width of the nozzle upper end portion 220a is increased. Accordingly, the amount of the deposition substance DM incident to the shadow area can be increased. The thickness of the deposition material DM may become uniform in the entire region of the deposition pattern, and a shadow phenomenon may be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

In addition, the deposition apparatus 1 of an embodiment may provide improved deposition uniformity and improved deposition efficiency since it includes the deposition source 200 that improves the nozzle integration by forming the nozzle group 230. Specifically, by disposing the nozzle set 230 at a position on the deposition source 200 where the deposition material DM is supplied to the shadow area, the deposition uniformity and the deposition efficiency may be improved.

Referring to fig. 8, the deposition apparatus 1_1 of the present embodiment may include: a chamber 100; a deposition source 200_1 disposed inside the chamber 100 and including at least one nozzle 220 and a nozzle group 230; a substrate holder 110 disposed to be spaced apart from and opposite to the deposition source 200_ 1; and a mask assembly 130 disposed between the substrate holder 110 and the deposition source 200_ 1.

The deposition apparatus 1_1 of the present embodiment is different from the deposition apparatus 1 of the embodiment shown in fig. 2 in that the deposition apparatus 1_1 of the present embodiment includes a deposition source 200_1, and the deposition source 200_1 includes a nozzle 220 and a nozzle group 230 formed to be inclined toward each other.

Specifically, the deposition source 200_1 of the deposition apparatus 1_1 of the present embodiment may further include a first peripheral area SAs1_1 disposed between the first outer area SA1_1 and one end of the deposition source 200_1 and a second peripheral area SAs2_1 disposed between the second outer area SA2_1 and the other end of the deposition source 200_ 1.

Each of the nozzles 220 and the nozzle groups 230 disposed in the center area CA _1, the first outer area SA1_1, and the second outer area SA2_1 may be designed to be inclined toward the outside of the deposition source 200_1 at a positive inclination angle.

Each of the nozzles 220 and the nozzle groups 230 disposed in the first and second peripheral areas SAS1_1 and SAS2_1 may be designed to be inclined toward the center of the deposition source 200_1 at a negative inclination angle. That is, a plurality of nozzles inclined toward each other may be provided in the first and second peripheral areas SAS1_1 and SAS2_ 1.

According to the deposition apparatus 1_1 of the present embodiment, by forming the nozzle group 230, the thickness of the entire area of the deposition pattern can be made uniform, and the shadow phenomenon can be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

Fig. 9 is a sectional view of a nozzle group of a deposition apparatus according to another embodiment.

The nozzle group 230_2 of the deposition apparatus 1 of the present embodiment is different from the nozzle group 230 of the embodiment shown in fig. 6 in that the first to fifth nozzles NZ1_2 to NZ5_2 forming the nozzle group 230_2 have the same height, and the discharge ports OL1_2 to OL5_2 of the first to fifth nozzles NZ1_2 to NZ5_2 are formed in parallel with the cap plate 210.

According to the deposition apparatus 1 of the present embodiment, by forming the nozzle group 230_2, the thickness of the entire region of the deposition pattern can be made uniform, and the shadow phenomenon can be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

The nozzle group 230_3 of the deposition apparatus 1 of the present embodiment differs from the nozzle group 230 of the embodiment shown in fig. 6 in that the size of the unit nozzles becomes smaller from the first nozzle NZ1_3 forming the nozzle group 230_3 toward the fifth nozzle NZ5_3, the ejection ports OL1_3 to OL5_3 of the first nozzle NZ1_3 to the fifth nozzle NZ5_3 are included in the same plane, and the respective ejection ports OL1_3 to OL5_3 are not perpendicular to the ejection lines SL1_3 to SL5_ 3.

According to the deposition apparatus 1 of the present embodiment, by forming the nozzle group 230_3, the thickness of the entire region of the deposition pattern can be made uniform, and the shadow phenomenon can be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

The nozzle group 230_4 of the deposition apparatus 1 of the present embodiment is different from the nozzle group 230 of the embodiment shown in fig. 6 in that the first nozzle NZ1_4 to the fifth nozzle NZ5_4 forming the nozzle group 230_4 are reduced in the size maintenance ratio of the unit nozzles from the first nozzle NZ1_4 toward the fifth nozzle NZ5_ 4.

According to the deposition apparatus 1 of the present embodiment, by forming the nozzle group 230_4, the thickness of the entire region of the deposition pattern can be made uniform, and the shadow phenomenon can be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

The nozzle group 230_5 of the deposition apparatus 1 of the present embodiment is different from the nozzle group 230 of the embodiment shown in fig. 6 in that the inner side surfaces of the first independent sidewall IW1_5, the second independent sidewall IW2_5 and the first common sidewall SW1_5 to the fourth common sidewall SW4_5, which correspond to the nozzle group upper end 230a _5 of the first nozzle NZ1_5 to the fifth nozzle NZ5_5 forming the nozzle group 230_5, are formed to be convex toward the respective ejection lines SL1_5 to SL5_ 5.

According to the deposition apparatus 1 of the present embodiment, by forming the nozzle group 230_5, the thickness of the entire region of the deposition pattern can be made uniform, and the shadow phenomenon can be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

The nozzle group 230_6 of the deposition apparatus 1 of the present embodiment is different from the nozzle group 230 of the embodiment shown in fig. 6 in that inner side surfaces of the first independent sidewall IW1_6, the second independent sidewall IW2_6 and the first common sidewall SW1_6 to the fourth common sidewall SW4_6, which correspond to the nozzle group upper end 230a _6 of the first nozzle NZ1_6 to the fifth nozzle NZ5_6 forming the nozzle group 230_6, are formed to be concave toward the respective ejection lines SL1_6 to SL5_ 6.

According to the deposition apparatus 1 of the present embodiment, by forming the nozzle group 230_6, the thickness of the entire region of the deposition pattern can be made uniform, and the shadow phenomenon can be reduced. Accordingly, a deposition apparatus having improved deposition uniformity and deposition efficiency and a method of manufacturing an organic light emitting display device using the same may be provided.

Next, a method for manufacturing an organic light emitting display device using the deposition apparatus 1 of the above-described embodiment will be described.

Referring to fig. 14 to 16, a substrate 120 is provided within the deposition apparatus 1 as described above. For example, the substrate 120 may include a plurality of thin film transistors and a first electrode layer.

If specifically described, a pixel defining film 60 defining the red, green, and blue sub-pixels R, G, and B and a first electrode 61 exposed through an opening portion of the pixel defining film 60 may be disposed on the substrate 120, and a deposition substance DM may be deposited on a surface of the first electrode 61.

Here, the deposition material DM will be described by taking as an example the formation of the light-emitting layer 62 of the organic light-emitting display device. Here, the light-emitting layer 62 may be one of organic substances used for a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, but is not limited thereto.

The substrate 120 may be formed of a transparent insulating material. For example, the substrate 120 may be formed of glass, quartz, ceramic, plastic, or the like. The substrate 120 may be a flat plate shape.

The substrate 120 may be made of a material that is easily bent by an external force. The substrate 120 may support other structures disposed on the substrate 120. Although not shown, the substrate 120 may include a plurality of thin film transistors. The drain electrode of at least a part of the plurality of thin film transistors may be electrically connected to the first electrode 61.

The first electrode 61 may be disposed on the substrate 120 for each sub-pixel R, G, B. The first electrode 61 may be an anode electrode that receives a signal applied to a drain electrode of the thin film transistor and supplies holes to the light emitting layer 62 or a cathode electrode that supplies electrons.

The first electrode 61 may function as a transparent electrode, a reflective electrode, or a semi-transmissive electrode. When the first electrode 61 is used as a transparent electrode, the first electrode 61 may be formed of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Zinc Oxide (ZnO), or In₂O₃And (4) forming.

When the first electrode 61 is used as a reflective electrode, ITO, IZO, ZnO, or In may be formed on a reflective film after the reflective film is formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like₂O₃To construct.

When the first electrode 61 is used as a semi-transmissive electrode, a thin reflective film made of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof may be formed thereon, followed by forming ITO, IZO, or the like,ZnO or In₂O₃To construct.

The pixel defining film 60 is provided on the substrate 120 in such a manner as to have an opening portion exposing the first electrode 61, and defines each sub-pixel R, G, B on the substrate 120.

Here, the pixel defining film 60 may be formed of an insulating substance. For example, the pixel defining film 60 may include at least one organic substance selected from Benzocyclobutene (BCB), Polyimide (PI), Polyamide (PA), acrylic resin, phenol resin, and the like. As another example, the pixel defining film 60 may include an inorganic substance such as silicon nitride. The pixel defining film 60 may be formed by a photolithography process, but is not limited thereto.

The light emitting layer 62 may be formed on the first electrode 61 exposed through the opening portion of the pixel defining film 60.

Next, the mask assembly 130 is aligned at a lower portion of the substrate 120 such that the transmissive portion 130b of the mask assembly 130 is exposed to a pixel to be deposited, and the light emitting layer 62 is formed by depositing an organic substance.

Looking specifically at the process of forming the light emitting layer 62, as shown in fig. 14, the transmissive portion 130b of the mask assembly 130 exposes the red subpixel R to be deposited with the light emitting layer 62. Thereby, the red deposition substance RDM evaporated from the deposition source 200 may be deposited on the bare red sub-pixel R.

The mask portion 130a of the mask assembly 130 covers the green and blue sub-pixels G and B, thereby preventing the red deposition material RDM evaporated from the deposition source 200 from being deposited on the green and blue sub-pixels G and B.

Thereby, the light emitting layer 62 may be deposited on each red sub-pixel R. Next, as shown in fig. 15, the transmissive portion 130b of the mask assembly 130 may expose the green sub-pixel G to be deposited with the light emitting layer 62. Thereby, the green deposition substance GDM evaporated from the deposition source 200 may be deposited on the bare green sub-pixel G.

The mask portion 130a of the mask assembly 130 covers the red and blue sub-pixels R and B, thereby preventing the green deposition material GDM evaporated from the deposition source 200 from being deposited on the red and blue sub-pixels R and B.

Thereby, the light emitting layer 62 may be deposited on each green sub-pixel G.

Next, as shown in fig. 16, the transmissive portion 130B of the mask assembly 130 exposes the blue sub-pixel B to which the light emitting layer 62 is to be deposited. Thereby, the blue deposition substance BDM evaporated from the deposition source 200 may be deposited on the bare blue sub-pixel B.

The mask portion 130a of the mask assembly 130 covers the red and green sub-pixels R and G, thereby preventing the blue deposition substance BDM evaporated from the deposition source 200 from being deposited on the red and green sub-pixels R and G.

The present invention has been described above mainly with reference to the embodiments of the present invention, but the present invention is by way of example only and is not limited thereto, and it will be apparent to those skilled in the art to which the present invention pertains that various modifications and applications not illustrated above can be made without departing from the essential characteristics of the embodiments of the present invention. For example, the present invention can be implemented by modifying each of the components specifically shown in the embodiments of the present invention. And differences associated with such variations and applications should be construed as being included in the scope of the present invention as set forth in the appended claims.

Description of the reference numerals

1: deposition apparatus

100: chamber

110: substrate holder

120: substrate

130: mask assembly

200: deposition source

220: nozzle with a nozzle body

230: nozzle set

SL: jet line

FP: a nozzle flow path.

Claims

1. A deposition source, comprising:

a crucible extending in one direction and having an upper side opened;

a cover plate combined with the crucible for shielding an open portion of the crucible; and

at least one nozzle group including a plurality of unit nozzles coupled to the cover plate and arranged in an extending direction of the crucible,

each of the unit nozzles includes: a first discharge port located on the upper side; and a first nozzle flow path connecting the first discharge port and the crucible and surrounded by a unit nozzle side wall,

the first nozzle flow path includes: a first lower end portion located at the lower portion; and a first upper end portion connected to the first lower end portion and located above the first lower end portion,

the first lower end portion has a uniform width,

the closer to the first discharge port, the wider the width of the first upper end portion becomes,

the unit nozzle side wall includes: a first outer sidewall provided at one side of a first outermost unit nozzle, the first outermost unit nozzle being one unit nozzle located at an outer side among the plurality of unit nozzles within the nozzle group; a second outer sidewall provided at the other side of a second outermost unit nozzle, the second outermost unit nozzle being a unit nozzle located at the other outer side among the plurality of unit nozzles; and a common sidewall disposed between adjacent ones of the unit nozzles.

2. The deposition source of claim 1 wherein,

the plurality of unit nozzles in the nozzle group are integrated by the common sidewall.

3. The deposition source of claim 2 further comprising a plurality of stand alone nozzles coupled to the cover plate,

the stand-alone nozzle includes: a second discharge port located on the upper side; and a second nozzle flow path connecting the second discharge port and the crucible and surrounded by an isolated nozzle sidewall,

the orphan nozzle sidewalls of each of the orphan nozzles are spaced apart from the orphan nozzle sidewalls of other orphan nozzles and the unit nozzle sidewalls of the nozzle group.

4. The deposition source of claim 3 wherein,

the second nozzle flow path includes: a second lower end portion located at the lower portion; and a second upper end portion connected to the second lower end portion and located above the second lower end portion,

the second lower end portion has a uniform width,

the width of the second upper end portion becomes wider as it gets closer to the second discharge port.

5. The deposition source according to claim 4, comprising a first outer region on one side and a second outer region on the other side with respect to a center of the extending direction of the crucible,

the nozzle group and the isolated nozzle are disposed in the first outer region and the second outer region, respectively.

6. The deposition source of claim 5 wherein,

the isolated nozzles and the nozzle groups are arranged in a symmetrical shape with respect to the center of the crucible in the extending direction.

7. A deposition source, comprising:

a crucible extending in one direction and having an upper side opened;

a plurality of nozzles coupled to the cover plate and arranged in an extending direction of the crucible,

each of the nozzles includes: an outlet port located on the upper side; and a nozzle flow path connecting the discharge port and the crucible and surrounded by a nozzle side wall,

the nozzle flow path includes: a lower end portion located at the lower portion; and an upper end portion connected to the lower end portion and located above the lower end portion,

the lower end portion has a uniform width,

the closer to the discharge port, the wider the width of the upper end portion becomes,

at least some of the plurality of nozzles share the nozzle sidewall between adjacent nozzles to form an integrated nozzle group.

8. The deposition source of claim 7 wherein,

the angle formed by the lower end of each nozzle and the normal line of the cover plate may be increased or maintained as it moves from the center of the crucible in the extending direction toward the outside.

9. The deposition source of claim 8 wherein,

the angle formed by the lower end portions of the nozzles within a single nozzle group and the normal to the cover plate is uniform.

10. The deposition source of claim 7 wherein,

the spacing between the nozzles within the nozzle group is less than the spacing between nozzles that do not form the nozzle group.