CN112771446A - Lithography system and method - Google Patents

Lithography system and method Download PDF

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Publication number
CN112771446A
CN112771446A CN201980063196.XA CN201980063196A CN112771446A CN 112771446 A CN112771446 A CN 112771446A CN 201980063196 A CN201980063196 A CN 201980063196A CN 112771446 A CN112771446 A CN 112771446A
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CN
China
Prior art keywords
pellicle membrane
particle
particles
electron beam
pellicle
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Pending
Application number
CN201980063196.XA
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Chinese (zh)
Inventor
A·尼基帕罗夫
马库斯·艾德里纳斯·范德柯克霍夫
E·W·F·卡西米里
S·萨尔瓦多
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of CN112771446A publication Critical patent/CN112771446A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Abstract

A system for securing particles to a pellicle membrane for subsequent use in a lithographic apparatus, the system comprising a particle securing device configured to secure particles to the pellicle membrane. The particle fixture is configured to direct an electron beam or a radiation beam such that the electron beam or the radiation beam passes through the pellicle membrane before being incident on the particles.

Description

Lithography system and method
Cross Reference to Related Applications
The present application claims priority from EP application No. 18197443.7, filed on 28.9.2018, and priority from EP application No. 18199853.5, filed on 11.10.2018, which are incorporated herein by reference in their entirety.
Technical Field
The present invention relates to a system and method for fixing particles to a pellicle membrane such that, when used in a lithographic apparatus, the particles do not detach from the pellicle membrane and therefore cannot reach the reticle of the lithographic apparatus.
Background
A lithographic apparatus is a machine configured to apply a desired pattern onto a substrate. Lithographic apparatus can be used, for example, to manufacture Integrated Circuits (ICs). The lithographic apparatus may, for example, project a pattern at a patterning device (e.g., a reticle or mask) onto a layer of radiation-sensitive material (resist) provided on the substrate.
To project a pattern onto a substrate, a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features that can be formed on the substrate. Typical wavelengths currently in use are 365nm, 248nm, 193nm and 13.5 nm. A lithographic apparatus using Extreme Ultraviolet (EUV) radiation having a wavelength in the range 4nm to 20nm (e.g. 6.7nm or 13.5nm) may be used to form smaller features on a substrate than a lithographic apparatus using radiation having a wavelength of 193nm, for example.
Some lithographic apparatus (e.g., EUV and DUV lithographic apparatus) include a pellicle membrane attached to a reticle. Pellicle diaphragms are thin (e.g., less than about 70nm thick) transmissive films that are spaced a few millimeters (e.g., about 5mm) from the pattern of the reticle. The particles received on the pellicle membrane are in the far field relative to the pattern of the reticle and therefore have no significant effect on the quality of the image projected by the lithographic apparatus onto the substrate. If the pellicle membrane is not present, the particles will be on the pattern of the reticle and will obscure a portion of the pattern, thereby preventing the pattern from being projected correctly onto the substrate. Thus, pellicle membranes play an important role in preventing particles from adversely affecting the projection of a pattern from a lithographic apparatus onto a substrate.
The pellicle membrane may become dirty before the pellicle is attached to the reticle for use in the lithographic apparatus. That is, particles may be incident on the pellicle membrane before the pellicle membrane is used in the lithographic apparatus. Activities that include transporting the pellicle membrane, packaging the pellicle membrane, and mounting the pellicle membrane to the reticle may result in particles being incident on the pellicle membrane. It has been found that some particles present on the pellicle membrane detach from the pellicle membrane and travel to the reticle during lithographic exposure and thereby adversely affect the pattern projected onto the substrate.
Currently, the pellicle, which is considered too dirty for use, is discarded. Known methods of dealing with the problem of dirty pellicle involve cleaning the pellicle, for example using vibration, plasma, wet scrubbing, etc. However, the known method has a risk of breaking the pellicle, because the pellicle is an extremely thin film and is easily damaged. Some known methods of cleaning dirty pellicle membranes involve the application of heat during cleaning in an attempt to avoid introducing cracks to the pellicle membrane. However, the application of heat may also cause the pellicle to weaken, thereby reducing the operating life of the pellicle membrane.
For example, it would be desirable to provide a method of preventing or alleviating one or more problems of the prior art, whether identified herein or elsewhere.
Disclosure of Invention
According to a first aspect of the invention, there is provided a system for securing particles to a pellicle membrane for subsequent use in a lithographic apparatus, the system comprising a particle securing device configured to secure particles to the pellicle membrane.
The particles may be incident on the pellicle membrane before the pellicle membrane is used in the lithographic apparatus. During lithographic exposure, some of the particles on the pellicle membrane may travel from the pellicle membrane to the reticle. These particles may then be imaged onto the substrate during the lithographic exposure and thereby adversely affect the quality of the lithographic exposure. The system for securing particles to the pellicle membrane advantageously prevents the particles from traveling to the reticle and thereby from adversely affecting the lithographic exposure.
The particle securing device may be configured to non-removably secure the particles to the pellicle membrane. The particles may be fixed to the pellicle membrane throughout the duration of its operational life.
The particle immobilization device may be configured to immobilize particles to a reticle-facing surface of the pellicle membrane.
The particle immobilization device may be configured to provide a material to the pellicle membrane for immobilizing the particles to the pellicle membrane.
The material provided by the particle immobilization device to the pellicle membrane may have a dimension on the pellicle membrane in the plane of the pellicle membrane of less than about 10 μm. The material provided by the particle immobilization device to the pellicle membrane may have a size of about 10 μm or less on the pellicle membrane in the plane of the pellicle membrane.
The material provided by the particle immobilization device to the pellicle membrane may have a thickness of less than about 100nm on the pellicle membrane. The material provided by the particle immobilization device to the pellicle membrane may have a thickness of about 100nm or less on the pellicle membrane.
If the material provided to the pellicle membrane is too thick and/or has too large dimensions in the plane of the pellicle membrane (e.g. lengths, diameters, major axes, etc. determined depending on the shape of the deposited material), there is a risk that the material itself will at least partly image onto the substrate during lithographic exposure, thereby adversely affecting the lithographic exposure. By limiting the size and/or thickness of the material on the pellicle membrane, the material and particles are advantageously kept in the far field relative to the pattern of the reticle to avoid adversely affecting the quality of the image projected by the lithographic apparatus on the substrate.
The material provided by the particle immobilization device may comprise at least one of: molybdenum Mo, ruthenium Ru, zirconium Zr, boron B, cerium Ce, silicon Si, samarium Sm, praseodymium Pr, europium Eu, scandium Sc, promethium Pm, yttrium Y and rubidium Rb.
The material provided by the particle immobilization device may include at least one of carbon, oxygen, nitrogen, and hydrogen.
The material provided by the particle immobilization device may comprise at least one of a metal carbonyl and a cyclopentadienyl metal.
The material provided by the particle immobilization device may include at least one of camphor, menthol, naphthalene, and biphenyl.
The particle immobilization device may be configured to provide an electron beam or a radiation beam to the pellicle membrane for immobilizing the particles to the pellicle membrane.
The electron beam or radiation beam may be configured to induce an interaction between the material and the pellicle membrane and/or the particle, and thereby fix the particle to the pellicle membrane.
The interaction may create and/or enhance attractive forces acting between the deposited material and the particles and/or pellicle membrane, and may include, for example, covalent bonds, metallic bonds, polar bonds, hydrogen bonds, van der waals forces, and the like.
The particle fixture may be configured to direct the electron beam or the radiation beam such that the electron beam or the radiation beam passes through the pellicle membrane before being incident on the particles.
The electron beam or radiation beam may form a beam spot on the pellicle membrane having a diameter greater than about 0.1 μm. The electron beam or radiation beam may form a beam spot on the pellicle membrane having a diameter of less than about 5 μm. Providing an electron beam or radiation beam with these diameters may advantageously enable better management of the thermal effects acting on the pellicle membrane. Providing an electron beam or radiation beam having these diameters may advantageously reduce the range of scanning motion of the electron beam or radiation beam across the pellicle membrane.
The particle fixture may be configured to direct an electron beam or a radiation beam to form a beam spot on the particles on the pellicle membrane. The outer boundary of the beam spot may be less than about 5 μm from the particles. The outer boundary of the beam spot may be less than about 1 μm from the particles.
The particle fixture may be configured to direct an electron beam to form a beam spot on a region of the pellicle membrane that includes the particles. The electron beam may have an energy between about 100V and about 100 kV.
The pellicle membrane may be mounted to the reticle during use of the particle fixture. The electron beam can have an energy between about 0.5keV and about 5 keV.
The system may further have: a support configured to hold a reticle; and a material delivery system configured to provide a material in a gap between the reticle and the pellicle.
The system may also have a particle locator configured to determine a location of the particle on the pellicle membrane.
The particle positioner may be configured to generate a signal indicative of a position of the particle and provide the signal to the particle immobilization device. The particle fixture may be configured to use the signal to provide the material and/or the electron beam or the radiation beam to the location of the particle on the pellicle membrane. The electron beam or radiation beam may be configured to illuminate only a portion of the pellicle membrane corresponding to the position of the particle. The illuminated portion of the pellicle membrane may have a diameter of less than about 5 μm (e.g., about 1 μm).
The particle positioner may be configured to use an electron beam or a radiation beam to determine the position of the particle on the pellicle membrane.
The particle positioner may be configured to detect secondary and/or backscattered electrons generated by an electron beam or radiation beam interacting with the pellicle membrane and/or the particles.
The particle locator may include an optical measurement system configured to determine a position of the particle on the pellicle membrane. The optical measurement system may include: a radiation source for radiation scattered from the particles; and a radiation detector for detecting radiation scattered by the particles.
The particle positioner may comprise at least one of a bright field imaging device, a dark field imaging device, an atomic force microscope, and a capacitive particle detection means.
The particle positioner may be configured to position particles having a diameter between about 0.1 μm and about 5 μm.
The system may also have a first compartment for containing a material in a non-gaseous state. The system may also have a second compartment for containing the material in the gaseous state. The system may also have a third compartment for transmitting an electron beam or a radiation beam to the pellicle membrane.
The first compartment may include a semi-permeable barrier wall for preventing non-gaseous materials from reaching the pellicle membrane.
The pellicle membrane may form at least part of the second compartment.
The particle immobilization device may comprise a channel between the first compartment and the second compartment. The particle immobilization device may comprise a channel between the second compartment and the third compartment. The channel may be configured to transport gas and thereby effect suction and/or evacuation of the compartment.
The second compartment may be maintained at a pressure between about 0.001Pa and about 1 Pa.
The third compartment may include a vacuum environment (e.g., having less than about 10 deg.f)-5Pressure of Pa). The third compartment may include a low pressure (e.g., greater than about 10)-5A pressure of Pa and less than about 0.1 Pa) gaseous environment (e.g., including H2、H2O、O2At least one of). Degradation of the pellicle membrane may be caused by, for example, electron beam irradiation, oxidation and/or reduction of the pellicle membrane, etc., which may contribute to variations in the surface stress of the pellicle membrane. The vacuum environment and/or the low pressure gaseous environment may advantageously reduce the extent of undesired deposition of material on the pellicle membrane (e.g., on a non-reticle-facing surface of the pellicle membrane). The vacuum environment and/or the low pressure gaseous environment may advantageously reduce degradation of the pellicle membrane, for example, by providing a reaction force that at least partially counteracts a change in surface stress of the pellicle membrane.
The particle immobilization device may, for example, be configured to maintain a pressure differential between different sides of the pellicle membrane of less than about 1 Pa.
The particle immobilization device may include an electrical ground coupled to the pellicle membrane. Electrically grounding the pellicle membrane may advantageously reduce the charging of the pellicle membrane by the electron beam.
The system may also have a housing configured to contain the pellicle membrane in a clean environment (e.g., a clean environment having an ISO rating of 2 or better).
The system may also have a pellicle membrane transfer device configured to mount the pellicle membrane to a reticle maintained in a clean environment after the particle fixture has secured the particles to the pellicle membrane.
According to a second aspect of the invention, there is provided a method comprising fixing particles to a pellicle membrane.
The method may further comprise: the particles are non-removably secured to the pellicle membrane.
The method may further comprise: particles are fixed to the reticle-facing surface of the pellicle membrane.
The method may further comprise: a material is provided to the pellicle membrane to secure the particles to the pellicle membrane.
The method may further comprise: the material is provided to the pellicle membrane such that the material has a dimension on the pellicle membrane of less than about 10 μm.
The method may further comprise: the material is provided to the pellicle membrane such that the material has a thickness of less than about 100nm on the pellicle membrane.
The method may further comprise: an electron beam or radiation beam is provided to the pellicle membrane to secure the materials and particles to the pellicle membrane.
The method may further comprise: directing an electron beam or a radiation beam to the pellicle membrane to form a beam spot on the pellicle membrane having a diameter greater than about 0.1 μm. The method may further comprise: directing an electron beam or a radiation beam to the pellicle membrane to form a beam spot on the pellicle membrane having a diameter of less than about 5 μm.
The diameter of the electron beam or radiation beam may be selected depending, at least in part, on the size of the particles to be secured to the pellicle membrane. For example, an electron beam may be used to determine the position of particles on a pellicle membrane. After the position of the particle on the pellicle membrane has been determined, the diameter of the electron beam or radiation beam may be changed (e.g., reduced to about 100nm) and the electron beam or radiation beam may be used to fix the particle to the pellicle membrane.
The method may further comprise: an electron beam or radiation beam is used to induce interactions between materials and/or pellicle membranes or particles and thereby fix the particles to the pellicle membranes.
The method may further comprise: directing the electron beam or radiation beam such that the electron beam or radiation beam passes through the pellicle membrane before being incident on the particles.
The method may further comprise: the particles are fixed to the pellicle during mounting of the pellicle to the reticle, and wherein the electron beam has an energy between about 0.5keV and about 5 keV.
The method may further comprise: a material is provided in a gap between the reticle and the pellicle.
The method may further comprise: the position of the particles on the pellicle membrane is determined.
The method may further comprise: particles having a diameter greater than about 0.1 μm are located. The method may further comprise: particles having a diameter of less than about 5 μm are positioned.
The method can comprise the following steps: by including a vacuum environment (e.g., less than about 10)-5Pressure of Pa) to provide an electron beam or a radiation beam to the pellicle membrane. Alternatively, the method may further comprise: by having a low pressure (e.g., greater than about 10)-5A pressure of Pa and less than about 0.1 Pa) gaseous environment (e.g., including H2、H2O、O2At least one of) provides an electron beam or a radiation beam to the pellicle membrane. Degradation of the pellicle membrane may be caused by, for example, electron beam irradiation, oxidation and/or reduction of the pellicle membrane, etc., which may contribute to variations in the surface stress of the pellicle membrane. The vacuum environment and/or the low pressure gaseous environment may advantageously reduce the extent of undesired deposition of material on the pellicle membrane (e.g., on a non-reticle-facing surface of the pellicle membrane). The vacuum environment and/or the low pressure gaseous environment may advantageously reduce degradation of the pellicle membrane, for example, by providing a reaction force that at least partially counteracts a change in surface stress of the pellicle membrane.
The method may further comprise: after the particles have been fixed to the pellicle membrane, the pellicle membrane is kept in a clean environment. The method may further comprise: after the particles have been fixed to the pellicle membrane, the pellicle membrane is mounted to the reticle in a clean environment.
According to a third aspect of the invention there is provided a method of projecting a patterned beam of radiation onto a substrate, the patterned beam of radiation passing through a pellicle membrane prior to being incident on the substrate, wherein the particles have been immobilised to the pellicle membrane using the method of the second aspect of the invention.
According to a fourth aspect of the present invention there is provided a pellicle membrane comprising particles which have been fixed to the pellicle membrane using the method of the second aspect of the present invention.
According to a fifth aspect of the invention, the invention relates to the use of a system according to the first aspect for fixing particles to a pellicle membrane for subsequent use in a lithographic apparatus.
Any portion of any of the aspects of the invention may be combined in any manner.
Drawings
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which:
FIG. 1 schematically depicts a lithographic system comprising a radiation source, a lithographic apparatus and a pellicle according to an embodiment of the invention;
FIG. 2 schematically depicts a system for securing particles to a pellicle membrane according to an embodiment of the invention;
FIG. 3 schematically depicts an enlarged view of a pellicle membrane comprising particles that have been fixed to the pellicle membrane, according to an embodiment of the invention; and is
Fig. 4 schematically depicts a system for securing particles to a pellicle membrane mounted to a reticle, according to an embodiment of the invention.
Detailed Description
FIG. 1 depicts a lithographic system including a radiation source SO, a lithographic apparatus LA and a pellicle 20 according to an embodiment of the invention. The radiation source SO is configured to generate an EUV radiation beam B and to supply the EUV radiation beam B to the lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g. a mask), a projection system PS, and a substrate table WT configured to support a substrate W.
The illumination system IL is configured to condition the EUV radiation beam B before it is incident on the patterning device MA. In addition, the illumination system IL may comprise a facet field mirror device 10 and a facet pupil mirror device 11. The faceted field mirror device 10 and the faceted pupil mirror device 11 together provide a beam B of EUV radiation having a desired cross-sectional shape and a desired intensity distribution. The illumination system IL may comprise other mirrors or devices in addition to or instead of the facet field mirror device 10 and the facet pupil mirror device 11.
After being so conditioned, the EUV radiation beam B interacts with the patterning device MA. Due to this interaction, a patterned beam B' of EUV radiation is produced. The projection system PS is configured to project a patterned beam B' of EUV radiation onto a substrate W. For this purpose, the projection system PS may comprise a plurality of mirrors 13, 14 configured to project the patterned EUV radiation beam B' onto a substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the patterned EUV radiation beam B', thus forming an image having features smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS is illustrated as having only two mirrors 13, 14 in fig. 1, the projection system PS may comprise a different number of mirrors (e.g. six or eight mirrors).
The substrate W may include a previously formed pattern. In this case, the lithographic apparatus LA aligns an image formed by the patterned EUV radiation beam B' with a pattern previously formed on the substrate W.
A relative vacuum, i.e. a small amount of gas (e.g. hydrogen) at a pressure substantially lower than atmospheric pressure, may be provided in the radiation source SO, in the illumination system IL and/or in the projection system PS.
The radiation source SO may be a Laser Produced Plasma (LPP) source, a Discharge Produced Plasma (DPP) source, a Free Electron Laser (FEL) or any other radiation source capable of producing EUV radiation.
As previously discussed, the particles may be incident on the pellicle membrane before the pellicle membrane is used in the lithographic apparatus. During a lithographic exposure, some of the particles may travel from the pellicle membrane to the reticle and thereby adversely affect the quality of the lithographic exposure.
Fig. 2 schematically depicts a system 22 for securing particles 24 to pellicle membrane 20, in accordance with an embodiment of the present invention. The system 22 at least partially prepares the pellicle membrane 20 for subsequent use in a lithographic apparatus (e.g., the lithographic apparatus of FIG. 1). Pellicle membrane 20 is mounted to frame 23 which includes studs 25. Pellicle membrane 20 and frame 23 may be referred to as a pellicle assembly. The pellicle assembly is configured to be removably mounted on the reticle MA. In the example of FIG. 2, the pellicle assembly is mounted on a base 29 of system 22. Methods and systems for mounting a pellicle assembly to a reticle MA and/or another surface, such as a pedestal 29, are discussed in International patent application WO/2016079051, which is incorporated herein by reference in its entirety. System 22 includes a particle immobilization device 26 configured to immobilize a particle 24 to pellicle membrane 20. The particles 24 may be described as contaminant particles. Particle fixture 26 may be configured to secure particles 24 to pellicle membrane 20 such that particles 24 do not separate from pellicle membrane 20 during lithographic exposure. Particle securing device 26 may be configured to non-removably secure particles 24 to pellicle membrane 20. That is, particle immobilization device 26 may immobilize particles 24 to pellicle membrane 20 such that particles 24 are immobilized to pellicle membrane 20 throughout its operational life.
Particle fixture 26 may be configured to secure particles 24 to reticle-facing surface 21 of pellicle membrane 20. Particles present on the reticle-facing surface 21 of the pellicle membrane 20 may have a greater risk of travelling from the pellicle membrane 20 to the reticle MA during lithographic exposure than particles present on the opposite side 19 of the pellicle membrane 20. This is at least in part because there is a shorter travel distance between the reticle-facing surface 21 of the pellicle membrane 20 and the reticle MA compared to the distance between the opposing surface 19 of the pellicle membrane 20 and the reticle MA. Particles 24 are fixed to reticle-facing surface 21 of pellicle membrane 20, thereby advantageously preventing these particles 24 from adversely affecting the lithographic exposure.
Particle immobilization device 26 may be configured to provide material 28 to pellicle membrane 20 for immobilizing particles 24 to pellicle membrane 20. Material 28 may be provided around particles 24 to form a cap that captures and thereby secures particles 24 to pellicle membrane 20. Alternatively or additionally, the material 28 may be provided between the particle 24 and the pellicle membrane 20 and act as a bonding layer between the particle 24 and the pellicle membrane 20. Material 28 may be used to increase the attractive force acting between particles 24 and pellicle membrane 20 such that particles 24 become secured to pellicle membrane 20. Material 28 may additionally or alternatively be used to introduce a new attractive force acting between particles 24 and pellicle membrane 20 such that particles 24 become secured to pellicle membrane 20. These attractive forces are described in more detail below with reference to fig. 3.
Material 28, after being provided to pellicle membrane 20, should not be large enough to adversely affect lithographic exposures involving pellicle membrane 20. That is, if material 28 deposited on pellicle membrane 20 is too thick and/or has too large dimensions in the plane of pellicle membrane 20 (e.g., lengths, diameters, major axes, etc., determined depending on the shape of the deposited material), there is a risk that material 28 itself will at least partially image onto the substrate during lithographic exposure, thereby adversely affecting lithographic exposure. The material 28, as well as the particles 24, should be kept in the far field relative to the reticle's pattern to avoid adversely affecting the quality of the image projected by the lithographic apparatus onto the substrate. The material 28 provided by the particle immobilization device 26 to the pellicle membrane 20 may have a dimension on the pellicle membrane 10 in the plane of the pellicle membrane 20 of less than about 10 μm. Material 28 provided by particle immobilization device 26 to pellicle membrane 20 may have a dimension in the plane of pellicle membrane 20 of less than about 1 μm. If the thickness of the material 28 provided onto the pellicle membrane 20 is too great, the material 28 may no longer be in the far field relative to the pattern of the reticle MA and thereby adversely affect the quality of the image projected onto the substrate. Material 28 provided by particle immobilization device 26 to pellicle membrane 20 may have a thickness of less than about 100nm on pellicle membrane 20. Material 28 provided by particle immobilization device 26 to pellicle membrane 20 may have a thickness of less than about 10nm on pellicle membrane 20.
It will be appreciated that fig. 2 is merely a schematic representation of an embodiment of the present invention, and that the relative sizes of its features (e.g., the size of particles 24, materials, and pellicle membrane 20) have been adjusted for the purpose of illustrating the present invention.
Material 28 provided by particle fixture 26 may comprise one or more materials suitable for use when exposed to EUV radiation. For example, the material 28 may include at least one of: molybdenum Mo, ruthenium Ru, zirconium Zr, boron B, cerium Ce, silicon Si, samarium Sm, praseodymium Pr, europium Eu, or Zr,Scandium Sc, promethium Pm, yttrium Y and rubidium Rb. Material 28 may comprise one or more materials suitable for use in the presence of a hydrogen plasma that may be generated by EUV radiation. For example, the material 28 provided by the particle immobilization device 26 may include at least one of carbon, oxygen, nitrogen, and hydrogen. Even if the material is partially etched by the hydrogen plasma, it still has a reduced risk of leaving any contaminants (e.g. molecular contaminants) on pellicle membrane 20 and/or reticle MA. The material 28 provided by the particle immobilization device 26 may comprise a metal carbonyl (e.g., Mo (CO))6Or Ru3(CO)12) And cyclopentadienyl metals (e.g. Ru (C)5H5)2) At least one of (a). The material 28 provided by the particle immobilization device 26 may include at least one of camphor, menthol, naphthalene, and biphenyl.
Particle fixture 26 may be configured to provide an electron beam or radiation beam 30 to pellicle membrane 20 for securing material 28 and particles 24 to pellicle membrane 20. Electron beam or radiation beam 30 may be configured to induce an interaction between material 28 and pellicle membrane 20 and/or particle 24, and thereby secure particle 24 to pellicle membrane 20.
For example, pellicle fixture 26 may use electron beam 30 in conjunction with material 28 to perform electron beam induced deposition to secure particles 24 to pellicle membrane 20. Electron beam induced deposition is discussed in more detail below with reference to fig. 3. The electron beam 30 may have an energy greater than about 200 eV. The electron beam 30 may have an energy of less than about 100 keV. The electron beam 30 may have an energy in a range of about 1keV to about 50 keV. The electron beam 30 may have an energy in a range of about 10keV to about 30 keV.
As another example, pellicle fixture 26 may use radiation beam 30 in conjunction with material 28 to perform radiation beam induced deposition to secure particles 24 to pellicle membrane 20. The radiation beam 30 may have a wavelength greater than about 100 nm. The radiation beam 30 may have a wavelength of less than about 200 nm.
Particle fixture 26 may be configured to direct an electron beam or radiation beam 30 to form a beam spot 27 on pellicle membrane 20. For example, the beam spot 27 may have a diameter greater than about 0.1 μm. For example, beam spot 27 may have a diameter of less than about 5 μm on pellicle membrane 20.
Particle fixture 26 may be configured to direct an electron beam or radiation beam 30 to form a beam spot 27 on particles 24 on pellicle membrane 20. The outer boundaries 31a, 31b of beam spot 27 may be less than about 5 μm from particle 24 in the plane of pellicle membrane 20. The outer boundaries 31a, 31b of beam spot 27 may be less than about 1 μm from particle 24 in the plane of pellicle membrane 20.
System 22 may also have a particle locator 32 configured to determine the location of particle 24 on pellicle membrane 20. In the exemplary embodiment shown in FIG. 2, a portion of pellicle fixture 26 is used as particle positioner 32. Particle positioner 32 may be configured to use electron beam or radiation beam 30 to determine the position of particle 24 on the pellicle membrane. That is, the electron beam or radiation beam 30 used to secure the particle 24 to the pellicle membrane 20 may also be used to position the particle 24 on the pellicle membrane 20.
Particle locator 32 may be configured to generate a signal indicative of the position of particle 24. Particle positioner 32 may provide the signal to particle fixture 26. Particle fixture 26 may be configured to use the signal to provide material 28 to the location of particles 24 on pellicle membrane 20. Particle fixture 26 may be configured to use the signal to provide an electron beam or radiation beam 30 to the location of particles 24 on pellicle membrane 20. For example, particle positioner 32 may include a scanning electron microscope that uses electron beam 30 to determine the position of particles 24 on pellicle membrane 20. A scanning electron microscope may be used to perform a fine scan to determine the location of particles 24 on pellicle membrane 20 with a desired accuracy. The accuracy of the scanning electron microscope can be selected depending at least in part on the size of the particles and/or the size of the expected deposition of material on the pellicle membrane. The accuracy of the scanning electron microscope can be selected, at least in part, depending on a larger value selected from the size of the particles and/or the size of the intended deposit on the pellicle membrane. For example, a scanning electron microscope can have an accuracy of greater than about 10 μm (e.g., at least 1 μm).
Particle positioner 32 may be configured to detect secondary and/or backscattered electrons (not shown) generated by electron beam or radiation beam 30 interacting with pellicle membrane 20 and/or particles 24.
Particle locator 32 may comprise a separate device for locating particles on pellicle membrane 20. Particle positioner 32 may, for example, include optical measurement systems, bright field imaging devices, dark field imaging devices, atomic force microscopes, and capacitive particle detection components. A system for securing particles to a pellicle membrane, including a particle positioner having an optical measurement system, is discussed below with reference to fig. 4.
It has been found that particles having a diameter between about 0.1 μm and about 5 μm have been found to travel from the pellicle membrane to the reticle during lithographic exposure. These particles tend to be metallic particles (e.g., ruthenium particles) and/or ceramic particles (e.g., Al)2O3And/or SiO2). Particle positioner 32 may be configured to position particles 24 having diameters between about 0.1 μm and about 5 μm. Particle positioner 32 may be configured to position metallic particles and/or ceramic particles. The particle positioner 32 may be configured to position ruthenium particles, Al2O3Particles and SiO2Any one of the particles.
The system 22 may also have a first compartment 34 for containing the material 28 in a non-gaseous state 35 and a second compartment 36 for containing the material 28 in a gaseous state 37. The first compartment 34 may be located within the base 29 of the system 22. The base 29 may be configured to electrically ground the pellicle frame 23. Pellicle frame 23 may be mounted to a base 29 via studs 25 (e.g., the same studs 25 used to mount frame 23 to reticle MA). The non-gaseous material 35 may be a solid or a liquid. The liquid material contained in the first compartment 34 may, for example, have a thickness of about 1gcm-3And about 10gcm-3In the middle of the above.
The use of a material 35 that is solid at room temperature may be more preferred due to improved ease of handling and deposition. The first compartment 34 may include a semi-permeable barrier wall 40 for preventing the non-gaseous material 35 from reaching the pellicle membrane 20. That is, when the material is in the gaseous state 37, the material may exit the first compartment 34. However, the semi-permeable barrier 40 serves to prevent the non-gaseous substance 35 from entering the second chamber 36 (e.g., via sparging and/or boiling), thereby reducing the risk of damaging the pellicle membrane 20.
Pellicle membrane 20 may form at least a portion of second compartment 36. The second compartment 36 may prevent the material 28 (gaseous or non-gaseous) from exiting the second compartment 36 and interfering with the electron beam or radiation beam 30. The second compartment 36 may not be completely sealed. For example, one or more voids or channels (not shown) may be present in or around the studs 25 of the frame 23 to allow for suction and/or venting of the second compartment 36. When the second compartment 36 is not completely sealed, leakage of some material into the third compartment 39 may occur. However, the one or more voids may be sufficiently small such that any material leaking from the second compartment 36 into the third compartment 39 is removed from the third compartment 39 by suction creating and maintaining a vacuum environment in the third compartment 39. The third compartment 39 is the compartment through which the electron beam or radiation beam is transmitted to pellicle membrane 20. The second compartment 36 may be maintained at a pressure greater than about 0.001 Pa. The second compartment 36 may be maintained at a pressure of less than about 1 Pa.
Particle fixture 26 may be configured to direct electron beam or radiation beam 30 such that electron beam or radiation beam 30 passes through pellicle membrane 20 before being incident on particles 24. This advantageously allows for relatively high partial pressures (e.g., at about 100Pa and about 10 Pa)-3Pa) is present in the first compartment 34, which enables the non-gaseous material 35 to change into the gaseous state 37 and travel into the second compartment 36 for deposition on the particles 24. This also advantageously allows for a vacuum environment (e.g., less than about 10 a)-5Pa pressure) is maintained in the third compartment 39 so that the electron beam or radiation beam 30 can be operated without being blocked by a substance. Pellicle membrane 20 may be capable of withstanding pressures of up to about 100 Pa. Thus, the pressure differential between the third compartment 39 and the second compartment 36 is not of sufficient magnitude to damage the pellicle membrane 20. Particle immobilization device 26 may be configured to maintain a pressure differential between different sides of pellicle membrane 20 of less than about 1 Pa.
The second compartment 36 may be connected to the third compartment 39 via a channel. The channel may be configured to transport gas and thereby enable suction and/or evacuation of the second compartment 36.
The third compartment 39 mayTo include having a thickness of greater than about 10-5A gaseous environment at a pressure of Pa and less than about 0.1 Pa. The third compartment may comprise H in gaseous form2、H2O and O2At least one of (a).
The particle fixture 26 may include an electrical ground (not shown), such as a wire connected to the pellicle membrane 20.
System 22 may also have a housing 42 configured to house pellicle membrane 20 in a clean environment 44. The clean environment 44 in the housing 42 may, for example, have an ISO rating of 2 or better. Clean environment 44 may include a vacuum. Alternatively, clean environment 44 may include a clean gas, such as argon, nitrogen, clean air, ultra-clean air, or the like.
System 22 may also have a pellicle membrane transfer 46 configured to mount pellicle membrane 20 to reticle MA held in clean environment 44 after particle fixture 26 has secured particles 24 to pellicle membrane 20. The pellicle membrane transfer device 46 may be configured to move the pellicle assembly (i.e., pellicle membrane 20 and frame 23) from the pedestal 29 and mount the pellicle assembly on the reticle MA.
Fig. 3 schematically depicts an enlarged view of pellicle membrane 20 comprising particles 24 that have been fixed to pellicle membrane 20, according to an embodiment of the invention. Fig. 3 shows three different forms of material 37, 50, 52 provided to the pellicle membrane 20 by a particle fixture (not shown) in different hatching. Gaseous material 37 is represented by cross hatching, adsorbent material 50 is represented by horizontal hatching, and deposition material 52 is represented by vertical hatching. The three different forms of material 37, 50, 52 correspond to different stages in the particle immobilization process. Gaseous material 37 is provided from a first compartment (not shown) to a second compartment (not shown) via a semi-permeable membrane (not shown). The gaseous material 37 may be incident on the pellicle membrane 20 and the particles 24 and become adsorbed on the pellicle membrane 20 and/or the particles 24. An electron beam or radiation beam 30 may be provided to the location of particles 24 on pellicle membrane 20. Electron beam or radiation beam 30 may be used to induce an interaction between adsorbent material 50 and pellicle membrane 20 and/or particles 24, and thereby secure particles 24 to pellicle membrane 20. The electron beam or radiation beam 30 may be used to induce dissociation of the particles 24 and/or the adsorbent material 37 on the pellicle membrane 20. The dissociating material (i.e., the deposition material 52) may introduce and/or increase an attractive force acting between the particles 24 and the pellicle membrane 20, and thereby fix the particles 24 to the pellicle membrane 20. Attractive forces acting between deposition material 52 and particles 24 and/or pellicle membrane 20 may include, for example, covalent bonds, metallic bonds, polar bonds, hydrogen bonds, van der waals forces, and the like. Particles 24 that are fixed by deposition material 52 (e.g., buried by deposition material between about 10nm and about 100nm) may be fixed to pellicle membrane 20 with a force that is between about 10 and 100 times stronger than if particles 24 were not fixed to pellicle membrane 20. This force reduces the risk of particles 24 detaching from pellicle membrane 20 and traveling towards the reticle (not shown) during lithographic exposure.
At least a portion of the electron beam 30 may be partially scattered by the pellicle membrane 20 and/or may be partially blocked. At least a portion of electron beam 30 may be transmitted through pellicle membrane 20 and incident on particle 24. At least a portion 56 of electron beam 30 may be transmitted through particle 24.
The electron beam 30 may have an energy in a range of about 10keV to about 30 keV. Pellicle membrane 20 may absorb less than about 10% of the energy of electron beam 30. The energy of the electron beam 30 absorbed by the pellicle membrane 20 may generate an avalanche of scattered electrons within the pellicle membrane 20 that can induce dissociation of the adsorbent material 50, thereby forming the deposition material 52 for fixing the particles 24 to the pellicle membrane 20.
The deposition rate of material 52 may be about 0.01 μm per nA minute3And about 0.1 μm per nA minute3In the meantime. For example, about 1 μm in the plane of the pellicle membrane2And a thickness between about 10nm and about 100nm, can be formed on pellicle membrane 20 in less than one minute using electron beam 30 having a current of about 1 nA. The deposition rate may be at least partially limited by the electron flux of the electron beam 30. This means that a lower pressure can be used for the second compartment (not shown) since the deposition rate may not be pressure limited.
Of electron beam 30 dissipated in pellicle membrane 20The power may be about 1W cm-2. This power may be within the radiative cooling limits of pellicle membrane 20, so pellicle membrane 20 may not be damaged by electron beam 30. An electron beam 30 with a lower current may be preferred for increasing the absorption of material 50 within the electron beam 30 incident on the pellicle membrane 20.
It will be appreciated that fig. 3 is only a schematic representation of an embodiment of the present invention and that the relative sizes of its features (e.g. the size of particles 24, materials 37, 50, 52 and pellicle membrane 20) have been adjusted for the purpose of illustrating the invention.
Fig. 4 schematically depicts a system 60 for securing particles 24 to pellicle membrane 20 mounted to reticle MA according to an embodiment of the invention. Pellicle membrane 20 is mounted to frame 23 which includes studs 25. Pellicle membrane 20 and frame 23 may be referred to as a pellicle assembly. The pellicle assembly is configured to be removably mounted on the reticle MA.
System 60 may also have a housing 42 configured to house pellicle membrane 20 in clean environment 44. Clean environment 44 may include a vacuum. Alternatively, clean environment 44 may include a clean gas, such as argon, nitrogen, clean air, ultra-clean air, or the like.
To reduce or prevent deposition of material 28 on the reticle MA, the energy of the electron beam or radiation beam (not shown) is reduced as compared to the embodiment of the invention shown in FIGS. 2 and 3. For example, the electron beam can have an energy greater than about 0.5 keV. For example, the electron beam 30 may have an energy of less than about 5 keV. The reduction in energy of the electron beam may increase the number of electrons stopped by the particles 24 and/or pellicle membrane 20, thereby reducing the number of electrons reaching the reticle MA.
The electron beam or radiation beam may have a desired numerical aperture to reduce the electron flux or radiation flux reaching the reticle MA. For example, in the case of an electron beam, the electron flux at the reticle MA may be between about 100 and about 1000 times lower than the electron flux incident on the pellicle membrane 20.
The deposition of material 28 may be proportional to the electron flux of the electron beam. Thus, deposition of material 28 at the reticle MA may be reduced or completely prevented. Example (b)E.g., having a thickness of about 1 μm deposited adjacent to the particles 242Has an area of about 10nm x (1 μm) and a thickness of about 10 μm2And a layer of material of about 0.1nm thickness may be deposited on the reticle MA. Deposition of this dimension may not affect the quality of the image of the reticle pattern formed on the substrate during lithographic exposure.
The system 60 may include: a support 70 configured to hold a reticle MA; and a material delivery system 72 configured to provide the material 28 in a void 74 located between the reticle MA and the pellicle membrane 20. The system 60 may further include: a first compartment 34 for containing the material 28 in a non-gaseous state 35; and a second compartment 36 for containing the material 28 in a gaseous state 37. The first compartment 34 may include a semi-permeable barrier wall 40 for preventing the non-gaseous material 35 from reaching the pellicle membrane 20.
In the example of fig. 4, the system 60 includes an optical measurement system 80. Optical measurement system 80 is configured to determine the location of particles 24 on pellicle membrane 20. The optical measurement system 80 may include: a radiation source 82 for radiation 84 scattered from the particles 24; and a radiation detector 86 for detecting radiation 88 scattered by the particles 24. The position of the particle 24 determined by the optical measurement system 80 may be referenced to, for example, an edge 90 of a corner of the pellicle frame and/or an edge 92 of a corner of the pellicle membrane and/or a surface 94 of the support. The same position reference system may be used for the electron beam or radiation beam of pellicle fixture 26.
The optical measurement system 80 may be configured to perform a coarse search for the particle 24. After the coarse position of the particle 24 has been determined by the optical measurement system 80, an electron beam or a radiation beam (not shown) of the particle fixture 26 may be used to perform a fine search for the particle 24 at the coarse position of the particle 24.
In any embodiment, the supply of material 28 by pellicle fixture 26 may be adjustable and/or time dependent.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications. Possible other applications include: manufacturing integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, Liquid Crystal Displays (LCDs), thin film magnetic heads, etc.
Although specific reference may be made in this text to the embodiments of the invention in the context of a lithographic apparatus, the embodiments of the invention may be used in other apparatuses. Embodiments of the invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device). These apparatuses may be collectively referred to as a lithography tool. The lithography tool may use vacuum conditions or ambient (non-vacuum) conditions.
Embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof, as the context allows. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include Read Only Memory (ROM); random Access Memory (RAM); a magnetic storage medium; an optical storage medium; a flash memory device; electrical, optical, acoustical or other form of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Additionally, firmware, software, programs, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact are performed by computing devices, processors, controllers, or other devices executing firmware, software, programs, instructions, or the like, and that doing so may cause actuators or other devices to interact with the physical world.
Embodiments of aspects of the invention may be described in terms of one or more of the following aspects:
1. a system for securing particles to a pellicle membrane for subsequent use in a lithographic apparatus, the system comprising a particle securing device configured to secure the particles to the pellicle membrane.
2. The system of aspect 1, wherein the particle securing device is configured to non-removably secure the particle to the pellicle membrane.
3. The system of aspect 1 or aspect 2, wherein the particle immobilization device is configured to immobilize the particles to a reticle-facing surface of the pellicle membrane.
4. The system of any of aspects 1-3, wherein the particle immobilization device is configured to provide a material to the pellicle membrane for immobilizing the particles to the pellicle membrane.
5. The system of aspect 4, wherein the material provided by the particle immobilization device to the pellicle membrane has a dimension in a plane of the pellicle membrane of less than about 10 μm.
6. The system of aspect 4 or aspect 5, wherein the material provided by the particle immobilization device to the pellicle membrane has a thickness of less than about 100nm on the pellicle membrane.
7. The system of any of aspects 4 to 6, wherein the material provided by the particle immobilization device comprises at least one of: molybdenum Mo, ruthenium Ru, zirconium Zr, boron B, cerium Ce, silicon Si, samarium Sm, praseodymium Pr, europium Eu, scandium Sc, promethium Pm, yttrium Y and rubidium Rb.
8. The system of any of aspects 4-7, wherein the material provided by the particle immobilization device comprises at least one of carbon, oxygen, nitrogen, and hydrogen.
9. The system of any of aspects 4-8, wherein the material provided by the particle immobilization device comprises at least one of a metal carbonyl and a cyclopentadienyl metal.
10. The system of any of aspects 4-9, wherein the material provided by the particle immobilization device comprises at least one of camphor, menthol, naphthalene, and biphenyl.
11. The system of any preceding aspect, wherein the particle immobilization device is configured to provide an electron beam or a radiation beam to the pellicle membrane for immobilizing the particles to the pellicle membrane.
12. The system of aspect 11, wherein the electron beam or the radiation beam is configured to induce an interaction between the material and the pellicle membrane and/or the particle, and thereby fix the particle to the pellicle membrane.
13. The system of aspect 11 or aspect 12, wherein the particle fixture is configured to direct the electron beam or the radiation beam such that the electron beam or the radiation beam passes through the pellicle membrane before being incident on the particle.
14. The system of any of aspects 11 to 13, wherein the particle fixture is configured to direct the electron beam or the radiation beam to form a beam spot having a diameter between about 0.1 μ ι η and about 5 μ ι η on the pellicle membrane.
15. The system of any of aspects 11 to 14, wherein the particle fixture is configured to direct the electron beam or the radiation beam to form a beam spot on the particle on the pellicle membrane, and wherein an outer boundary of the beam spot is less than about 5 μ ι η from the particle, and optionally wherein the outer boundary of the beam spot is less than about 1 μ ι η from the particle.
16. The system of any of aspects 11-14, wherein the particle fixture is configured to direct the electron beam to form a beam spot on a region of the pellicle membrane that includes the particle, and wherein the electron beam has an energy between about 100V and about 100 kV.
17. The system of any of aspects 11 to 15, wherein the pellicle membrane is mounted to a reticle during use of the particle fixture, and wherein the electron beam has an energy between about 0.5keV and about 5 keV.
18. The system of aspect 17, further comprising: a support configured to hold the reticle; and a material delivery system configured to provide the material in a gap between the reticle and the pellicle.
19. The system of any preceding aspect, further comprising a particle locator configured to determine a location of the particle on the pellicle membrane.
20. The system of aspect 19, wherein the particle positioner is configured to generate a signal indicative of a position of the particle and provide the signal to the particle fixture, and wherein the particle fixture is configured to use the signal to provide the material and/or the electron beam or the radiation beam to the position of the particle on the pellicle membrane.
21. The system of aspect 19 or aspect 20, wherein the particle positioner is configured to determine the position of the particle on the pellicle membrane using the electron beam or the radiation beam.
22. The system of aspect 21, wherein the particle positioner is configured to detect secondary and/or backscattered electrons generated by the electron beam or the radiation beam interacting with the pellicle membrane and/or the particles.
23. The system of any of aspects 19-22, wherein the particle locator comprises an optical measurement system configured to determine a location of the particle on the pellicle membrane, the optical measurement system comprising: a radiation source for scattering radiation from the particles; and a radiation detector for detecting radiation scattered by the particles.
24. The system of any of aspects 19 to 23, wherein the particle locator comprises at least one of a bright field imaging device, a dark field imaging device, an atomic force microscope, and a capacitive particle detection means.
25. The system of any of aspects 19-24, wherein the particle positioner is configured to position particles having a diameter between about 0.1 μ ι η and about 5 μ ι η.
26. The system of any of aspects 4 to 25, further comprising: a first compartment for containing the material in a non-gaseous state; a second compartment for containing the material in a gaseous state; and a third compartment for transmitting the electron beam or the radiation beam to the pellicle membrane.
27. The system of aspect 26, wherein the first compartment comprises a semi-permeable barrier wall for preventing non-gaseous materials from reaching the pellicle membrane.
28. The system of aspect 26 or aspect 27, wherein the pellicle membrane forms at least a portion of the second compartment.
29. The system of any of aspects 26-28, wherein the second compartment is connected to the third compartment via a passage, and wherein the passage is configured to allow suction and/or venting of the second compartment.
30. The system of any of aspects 26-29, wherein the second compartment is maintained at a pressure between about 0.001Pa and about 1 Pa.
31. The system of any of aspects 26-30, wherein the third compartment comprises a container having a volume of less than about 10- 5A vacuum environment of pressure Pa.
32. The system of any of aspects 26-30, wherein the third compartment comprises a container having a volume greater than about 10- 5A gaseous environment at a pressure of Pa and less than about 0.1 Pa.
33. The system of aspect 32, wherein the third compartment comprises H2、H2O and O2At least one of (a).
34. The system of any preceding aspect, wherein the particle immobilization device is configured to maintain a pressure differential between different sides of the pellicle membrane of less than about 1 Pa.
35. The system of any preceding aspect, wherein the particle immobilization device comprises an electrical ground coupled to the pellicle membrane.
36. The system of any preceding aspect, further comprising a housing configured to house the pellicle membrane in a clean environment.
37. The system of aspect 36, further comprising: a pellicle membrane transfer device configured to mount the pellicle membrane to a reticle maintained in the clean environment after the particle fixture has secured the particles to the pellicle membrane.
38. A method comprising securing particles to a pellicle membrane.
39. The method of aspect 38, further comprising: non-removably securing the particles to the pellicle membrane.
40. The method of aspect 38 or aspect 39, further comprising: fixing the particles to a reticle-facing surface of the pellicle membrane.
41. The method of any of aspects 38-40, further comprising: providing a material to the pellicle membrane to secure the particles to the pellicle membrane.
42. The method of aspect 41, further comprising: providing the material to the pellicle membrane such that the material has a dimension in a plane of the pellicle membrane of less than about 10 μm.
43. The method of aspect 41 or aspect 42, further comprising: providing the material to the pellicle membrane such that the material has a thickness of less than about 100nm on the pellicle membrane.
44. The method of any of aspects 41-43, further comprising: providing an electron beam or a radiation beam to the pellicle membrane to fix the material and the particles to the pellicle membrane.
45. The method of aspect 44, further comprising: directing the electron beam or the radiation beam to the pellicle membrane to form a beam spot on the pellicle membrane having a diameter between about 0.1 μm and about 5 μm.
46. The method of aspect 44 or aspect 45, further comprising: using the electron beam or the radiation beam to induce an interaction between the material and/or the pellicle membrane or the particles and thereby fix the particles to the pellicle membrane.
47. The method of any of aspects 44-46, further comprising: directing the electron beam or the radiation beam such that the electron beam or the radiation beam passes through the pellicle membrane before being incident on the particle.
48. The method of any of aspects 44-47, further comprising: fixing the particles to the pellicle membrane during mounting of the pellicle membrane to a reticle, and wherein the electron beam has an energy between about 0.5keV and about 5 keV.
49. The method of aspect 48, further comprising: providing the material in a void between the reticle and the pellicle.
50. The method of any of aspects 38-49, further comprising: determining the location of the particle on the pellicle membrane.
51. The method of aspect 50, further comprising: particles having a diameter between about 0.1 μm and about 5 μm are positioned on the pellicle membrane.
52. The method of any of aspects 44-51, further comprising: by including having less than about 10-5A compartment of a vacuum environment at a pressure of Pa provides the electron beam or the radiation beam to the pellicle membrane.
53. The method of any of aspects 44-52, further comprising: by including having a molecular weight of greater than about 10-5A compartment of a gaseous environment at a pressure of Pa and less than about 0.1Pa provides the electron beam or the radiation beam to the pellicle membrane.
54. The method of aspect 53, further comprising: h is to be2、H2O and O2Is provided to the compartment.
55. The method of any of aspects 38-54, further comprising: maintaining the pellicle membrane in a clean environment after the particles have been immobilized to the pellicle membrane.
56. A method of projecting a patterned beam of radiation onto a substrate, the patterned beam of radiation passing through a pellicle membrane prior to being incident on the substrate, wherein particles have been immobilised to the pellicle membrane using a method according to any of aspects 38 to 55.
57. A pellicle membrane comprising particles that have been fixed to the pellicle membrane using a method as claimed in any of aspects 38 to 55.
58. Use of the system of any one of aspects 1 to 37 for immobilizing particles to a pellicle membrane for subsequent use in a lithographic apparatus.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The above description is intended to be illustrative, and not restrictive. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

Claims (58)

1. A system for securing particles to a pellicle membrane for subsequent use in a lithographic apparatus, the system comprising a particle securing device configured to secure the particles to the pellicle membrane.
2. The system of claim 1, wherein the particle securing device is configured to non-removably secure the particle to the pellicle membrane.
3. The system of claim 1 or claim 2, wherein the particle immobilization device is configured to immobilize the particles to a reticle-facing surface of the pellicle membrane.
4. The system of any one of claims 1 to 3, wherein the particle securing device is configured to provide a material to the pellicle membrane for securing the particles to the pellicle membrane.
5. The system of claim 4, wherein the material provided by the particle immobilization device to the pellicle membrane has a dimension in a plane of the pellicle membrane of less than about 10 μm.
6. The system of claim 4 or claim 5, wherein the material provided by the particle immobilization device to the pellicle membrane has a thickness of less than about 100nm on the pellicle membrane.
7. The system of any one of claims 4 to 6, wherein the material provided by the particle immobilization device comprises at least one of: molybdenum Mo, ruthenium Ru, zirconium Zr, boron B, cerium Ce, silicon Si, samarium Sm, praseodymium Pr, europium Eu, scandium Sc, promethium Pm, yttrium Y and rubidium Rb.
8. The system of any one of claims 4 to 7, wherein the material provided by the particle immobilization device comprises at least one of carbon, oxygen, nitrogen, and hydrogen.
9. The system of any of claims 4 to 8, wherein the material provided by the particle immobilization device comprises at least one of a metal carbonyl and a cyclopentadienyl metal.
10. The system of any of claims 4 to 9, wherein the material provided by the particle immobilization device comprises at least one of camphor, menthol, naphthalene, and biphenyl.
11. The system of any preceding claim, wherein the particle securing device is configured to provide an electron beam or a radiation beam to the pellicle membrane for securing the particles to the pellicle membrane.
12. The system of claim 11, wherein the electron beam or the radiation beam is configured to induce an interaction between the material and the pellicle membrane and/or the particle, and thereby fix the particle to the pellicle membrane.
13. The system of claim 11 or claim 12, wherein the particle fixture is configured to direct the electron beam or the radiation beam such that the electron beam or the radiation beam passes through the pellicle membrane before being incident on the particle.
14. The system of any of claims 11 to 13, wherein the particle fixture is configured to direct the electron beam or the radiation beam to form a beam spot on the pellicle membrane having a diameter between about 0.1 μ ι η and about 5 μ ι η.
15. The system of any of claims 11 to 14, wherein the particle fixture is configured to direct the electron beam or the radiation beam to form a beam spot on the particle on the pellicle membrane, and wherein an outer boundary of the beam spot is less than about 5 μ ι η from the particle, and optionally wherein the outer boundary of the beam spot is less than about 1 μ ι η from the particle.
16. The system of any of claims 11-14, wherein the particle fixture is configured to direct the electron beam to form a beam spot on a region of the pellicle membrane that includes the particle, and wherein the electron beam has an energy between about 100V and about 100 kV.
17. The system of any of claims 11 to 15, wherein the pellicle membrane is mounted to a reticle during use of the particle fixture, and wherein the electron beam has an energy between about 0.5keV and about 5 keV.
18. The system of claim 17, further comprising: a support configured to hold the reticle; and a material delivery system configured to provide the material in a gap between the reticle and the pellicle.
19. The system of any preceding claim, further comprising a particle locator configured to determine a location of the particle on the pellicle membrane.
20. The system of claim 19, wherein the particle positioner is configured to generate a signal indicative of a position of the particle and provide the signal to the particle fixture, and wherein the particle fixture is configured to use the signal to provide the material and/or the electron beam or the radiation beam to the position of the particle on the pellicle membrane.
21. The system of claim 19 or claim 20, wherein the particle positioner is configured to determine the position of the particle on the pellicle membrane using the electron beam or the radiation beam.
22. The system of claim 21, wherein the particle positioner is configured to detect secondary and/or backscattered electrons generated by the electron beam or the radiation beam interacting with the pellicle membrane and/or the particles.
23. The system of any one of claims 19 to 22, wherein the particle locator comprises an optical measurement system configured to determine a location of the particle on the pellicle membrane, the optical measurement system comprising: a radiation source for scattering radiation from the particles; and a radiation detector for detecting radiation scattered by the particles.
24. The system of any one of claims 19 to 23, wherein the particle locator comprises at least one of a bright field imaging device, a dark field imaging device, an atomic force microscope, and a capacitive particle detection means.
25. The system of any one of claims 19 to 24, wherein the particle positioner is configured to position particles having a diameter between about 0.1 μ ι η and about 5 μ ι η.
26. The system of any of claims 4 to 25, further comprising: a first compartment for containing the material in a non-gaseous state; a second compartment for containing the material in a gaseous state; and a third compartment for transmitting the electron beam or the radiation beam to the pellicle membrane.
27. The system of claim 26, wherein the first compartment comprises a semi-permeable barrier for preventing non-gaseous materials from reaching the pellicle membrane.
28. A system according to claim 26 or claim 27, wherein the pellicle membrane forms at least part of the second compartment.
29. The system of any one of claims 26 to 28, wherein the second compartment is connected to the third compartment via a channel, and wherein the channel is configured to allow suction and/or venting of the second compartment.
30. The system of any of claims 26-29, wherein the second compartment is maintained at a pressure between about 0.001Pa and about 1 Pa.
31. The system of any of claims 26-30, wherein the third compartment comprises a container having a volume of less than about 10- 5A vacuum environment of pressure Pa.
32. The system of any of claims 26-30, wherein the third compartment comprises a container having a volume greater than about 10- 5Gaseous ring of pressure Pa and less than about 0.1PaAnd (4) environmental conditions.
33. The system of claim 32, wherein the third compartment comprises H2、H2O and O2At least one of (a).
34. The system of any preceding claim, wherein the particle immobilization device is configured to maintain a pressure differential between different sides of the pellicle membrane of less than about 1 Pa.
35. A system as claimed in any preceding claim, wherein the particle immobilisation device comprises an electrical ground connected to the pellicle membrane.
36. The system of any preceding claim, further comprising a housing configured to contain the pellicle membrane in a clean environment.
37. The system of claim 36, further comprising: a pellicle membrane transfer device configured to mount the pellicle membrane to a reticle maintained in the clean environment after the particle fixture has secured the particles to the pellicle membrane.
38. A method comprising securing particles to a pellicle membrane.
39. The method of claim 38, further comprising: non-removably securing the particles to the pellicle membrane.
40. The method of claim 38 or claim 39, further comprising: fixing the particles to a reticle-facing surface of the pellicle membrane.
41. The method of any of claims 38 to 40, further comprising: providing a material to the pellicle membrane to secure the particles to the pellicle membrane.
42. The method of claim 41, further comprising: providing the material to the pellicle membrane such that the material has a dimension in a plane of the pellicle membrane of less than about 10 μm.
43. The method of claim 41 or claim 42, further comprising: providing the material to the pellicle membrane such that the material has a thickness of less than about 100nm on the pellicle membrane.
44. The method of any of claims 41 to 43, further comprising: providing an electron beam or a radiation beam to the pellicle membrane to fix the material and the particles to the pellicle membrane.
45. The method of claim 44, further comprising: directing the electron beam or the radiation beam to the pellicle membrane to form a beam spot on the pellicle membrane having a diameter between about 0.1 μm and about 5 μm.
46. The method of claim 44 or claim 45, further comprising: using the electron beam or the radiation beam to induce an interaction between the material and/or the pellicle membrane or the particles and thereby fix the particles to the pellicle membrane.
47. The method of any one of claims 44 to 46, further comprising: directing the electron beam or the radiation beam such that the electron beam or the radiation beam passes through the pellicle membrane before being incident on the particle.
48. The method of any one of claims 44 to 47, further comprising: fixing the particles to the pellicle membrane during mounting of the pellicle membrane to a reticle, and wherein the electron beam has an energy between about 0.5keV and about 5 keV.
49. The method of claim 48, further comprising: providing the material in a void between the reticle and the pellicle.
50. The method of any one of claims 38 to 49, further comprising: determining the location of the particle on the pellicle membrane.
51. The method of claim 50, further comprising: particles having a diameter between about 0.1 μm and about 5 μm are positioned on the pellicle membrane.
52. The method of any one of claims 44 to 51, further comprising: by including having less than about 10-5A compartment of a vacuum environment at a pressure of Pa provides the electron beam or the radiation beam to the pellicle membrane.
53. The method of any of claims 44 to 52, further comprising: by including having a molecular weight of greater than about 10-5A compartment of a gaseous environment at a pressure of Pa and less than about 0.1Pa provides the electron beam or the radiation beam to the pellicle membrane.
54. The method of claim 53, further comprising: h is to be2、H2O and O2Is provided to the compartment.
55. The method of any one of claims 38 to 54, further comprising: maintaining the pellicle membrane in a clean environment after the particles have been immobilized to the pellicle membrane.
56. A method of projecting a patterned beam of radiation onto a substrate, the patterned beam of radiation passing through a pellicle membrane prior to being incident on the substrate, wherein particles have been immobilised to the pellicle membrane using a method according to any of claims 38 to 55.
57. A pellicle membrane comprising particles that have been fixed to the pellicle membrane using a method as claimed in any of claims 38 to 55.
58. Use of a system as claimed in any one of claims 1 to 37 for fixing particles to a pellicle membrane for subsequent use in a lithographic apparatus.
CN201980063196.XA 2018-09-28 2019-08-19 Lithography system and method Pending CN112771446A (en)

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