CN112768608A - Organic electrochemical transistor and preparation method thereof - Google Patents
Organic electrochemical transistor and preparation method thereof Download PDFInfo
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- CN112768608A CN112768608A CN202110030861.4A CN202110030861A CN112768608A CN 112768608 A CN112768608 A CN 112768608A CN 202110030861 A CN202110030861 A CN 202110030861A CN 112768608 A CN112768608 A CN 112768608A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses an organic electrochemical transistor and a preparation method thereof.A conductive polymer nanowire array is distributed on a substrate, gold material electrodes are used as a source electrode and a drain electrode of the organic electrochemical transistor and are arranged on the substrate and positioned at two ends of the conductive polymer nanowire array, a liquid storage tank is arranged on the substrate, the conductive polymer nanowire array is arranged in a space enclosed by the liquid storage tank, electrolyte is injected into the liquid storage tank, the gold material electrodes are in insulated connection with the electrolyte, and a reference electrode is used as a grid electrode of the organic electrochemical transistor and is inserted into the electrolyte; PSS nanometer line array organic electrochemical transistor can be used in the electricity test directly, have good electricity performance, compare with traditional film type conducting polymer organic electrochemical transistor, the organic electrochemical transistor of transconductance, mu C, response speed, stability, etc. of the organic electrochemical transistor are in the dominant position; the preparation method is simple to operate, low in cost and has the potential of large-scale application.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to an organic electrochemical transistor and a preparation method thereof.
Background
The organic electrochemical transistor is an electrical device coupling ion transmission and electron transmission, and mainly utilizes the characteristic that the conductivity of a conductive polymer changes along with the potential to realize the regulation and control of current between a source and a drain. The device has high on-off ratio and high signal amplification performance, and can amplify tiny biological signals. Therefore, organic electrochemical transistors have received much attention in the fields of microelectronics, biosensors, and the like.
The current conductive polymer thin film organic electrochemical transistor has the defects of low transconductance, poor cycle stability and low material utilization rate, influences the further development of the devices and limits the large-scale application of the devices. The one-dimensional conductive polymer array prepared by liquid bridge induction has the advantages of high specific surface area, high utilization rate of active materials, good molecular orientation, controllable array size and the like, has wide application prospect in the field of microelectronic devices, and can be applied to organic electrochemical transistors to overcome the defects of the existing organic electrochemical transistors. However, how to apply the one-dimensional conductive polymer array to the organic electrochemical transistor is a problem to be solved.
Therefore, the prior art still needs to be improved and developed.
Disclosure of Invention
The invention aims to provide an organic electrochemical transistor and a preparation method thereof, and aims to solve the problems of low transconductance and poor cycle stability of the conventional organic electrochemical transistor.
The technical scheme of the invention is as follows: the organic electrochemical transistor comprises a gold material electrode, a substrate, a conductive polymer nanowire array, a liquid storage tank and a reference electrode, wherein the conductive polymer nanowire array is distributed on the substrate, the gold material electrode is used as a source electrode and a drain electrode of the organic electrochemical transistor and is arranged on the substrate and positioned at two ends of the conductive polymer nanowire array, the liquid storage tank is arranged on the substrate, the conductive polymer nanowire array is arranged in a space surrounded by the liquid storage tank, electrolyte is injected into the liquid storage tank, the gold material electrode is in insulated connection with the electrolyte, and the reference electrode is used as a grid electrode of the organic electrochemical transistor and is inserted into the electrolyte.
The organic electrochemical transistor is characterized in that a chromium material layer is arranged between the substrate and the gold material electrode.
The width of the nanowire in the conductive polymer nanowire array is 0.5-4 micrometers, and the length of the nanowire is consistent with the length of a channel of the organic electrochemical transistor.
The organic electrochemical transistor is characterized in that the surface of the gold material electrode is covered with polyimide adhesive tape or nail polish, so that the gold material electrode is in insulated connection with electrolyte.
The organic electrochemical transistor is characterized in that the liquid storage tank is surrounded by a plurality of polydimethylsiloxane plates.
The organic electrochemical transistor is characterized in that the electrolyte is a NaCl solution, a hydrochloric acid solution or a phosphoric acid solution, and the concentration of the solution is 0.01-5%.
The organic electrochemical transistor is characterized in that the reference electrode used as the grid electrode of the organic electrochemical transistor is an Ag/AgCl reference electrode or a directly evaporated gold material electrode or a modified gold material electrode.
A method of fabricating an organic electrochemical transistor as claimed in any preceding claim, comprising:
s1: preparing a conducting polymer nanowire array on the surface of a substrate;
s2: evaporating gold material electrodes at two ends of the conductive polymer nanowire array by using a mask;
s3: covering the gold material electrode with polyimide tape or nail polish to avoid direct contact with electrolyte and only expose the conducting polymer nanowire array in the channel;
s4: preparing a liquid storage tank on the surface of a substrate by adopting a polydimethylsiloxane plate, and placing a conductive polymer nanowire array in a space surrounded by the liquid storage tank;
s5: and adding the electrolyte into a liquid storage tank, and inserting a reference electrode serving as a grid electrode of the organic electrochemical transistor into the electrolyte to obtain the complete organic electrochemical transistor.
The preparation method of the organic electrochemical transistor comprises the following steps in S1:
s 11: preparing a silicon column template: modifying the silicon column template by using perfluorooctyl trichlorosilane to enable the surface and the side wall of the silicon column template to generate wettability difference;
s 12: preparing a dispersion liquid;
s 13: dropping the dispersion liquid on the modified silicon column template, pressing the silicon column template dropped with the dispersion liquid with the substrate, and transferring the pressed substrate and the silicon column template into an oven for drying;
s 14: and (3) disassembling the substrate subjected to drying treatment and the silicon column template, and annealing the substrate covered with the conducting polymer nanowire array on the surface to obtain the substrate covered with the conducting polymer nanowire array on the surface.
The preparation method of the organic electrochemical transistor is characterized in that in the s12, the dispersion liquid is PEDOT-PSS dispersion liquid, polyaniline dispersion liquid or polypyrrole dispersion liquid.
The invention has the beneficial effects that: PSS nanometer line array organic electrochemical transistor can be used in the electricity test directly, have good electricity performance, compare with traditional film type conducting polymer organic electrochemical transistor, the transconductance, mu C, response speed, stability, etc. of this organic electrochemical transistor are in the dominant position; the preparation method is simple to operate, low in cost and has the potential of large-scale application.
Drawings
FIG. 1 is a flow chart of the steps of a method of fabricating an organic electrochemical transistor according to the present invention.
FIG. 2 is a schematic flow chart of a method of fabricating an organic electrochemical transistor according to the present invention.
FIG. 3 is a schematic diagram of a silicon pillar template with hydrophobic surface and super-hydrophobic sidewall according to the present invention.
FIG. 4 is a schematic representation of a silicon dioxide substrate covered with PEDOT PSS nanowire arrays of the present invention.
FIG. 5 is a schematic representation of a silicon dioxide substrate of the present invention provided with PEDOT PSS nanowire arrays and gold material electrodes.
Fig. 6 is a schematic diagram of an organic electrochemical transistor device in accordance with the present invention.
Fig. 7a is a schematic of the transconductance of an organic electrochemical transistor according to the present invention.
Figure 7b is a schematic representation of μ C of an organic electrochemical transistor according to the invention.
Figure 7c is a graphical representation of the performance of an organic electrochemical transistor of the present invention after 500 second cycling.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in FIG. 6, the technical scheme protects an organic electrochemical transistor, which comprises a gold material electrode 6, a substrate 1, a conductive polymer nanowire (the nanowire can be defined as a one-dimensional structure with the transverse direction limited below 100 nanometers (without limitation in the longitudinal direction)) array 2, a liquid storage tank 3, a reference electrode 4 (an electrode for reference comparison when measuring the potential of the electrode), the conductive polymer nanowire array 2 is distributed on the substrate 1, gold material electrodes 6 serving as a source electrode and a drain electrode of the organic electrochemical transistor are arranged on the substrate 1 and positioned at two ends of the conductive polymer nanowire array 2, the liquid storage tank 3 is arranged on the substrate 1, the conductive polymer nanowire array 2 is arranged in a space enclosed by the liquid storage tank 3, an electrolyte 5 is injected into the liquid storage tank 3, the gold material electrode 6 is in insulated connection with the electrolyte 5, and the reference electrode 4 is used as a grid electrode of the organic electrochemical transistor and is inserted into the electrolyte 5.
In certain embodiments, the gold material electrode 6 has a thickness of 100 nanometers.
In some specific embodiments, a chromium material layer is further arranged between the substrate 1 and the gold material electrode 6, and the thickness of the chromium material layer is 10 nanometers.
In some embodiments, the gold material electrodes 6 serve as the source and drain electrodes of an organic electrochemical transistor having a channel dimension of 1000 microns wide by 500 microns to 1000 microns long.
In some embodiments, the conductive polymer nanowire array 2 is made of an active layer material poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) or polyaniline or polypyrrole solution, and has high active material utilization rate; the width of the nano wire in the conductive polymer nano wire array 2 is 0.5 micron-4 micron, the height of the nano wire is 200 nanometers, and the length of the nano wire is consistent with the length of a channel of the organic electrochemical transistor and is 500 microns-1000 microns.
In certain embodiments, the substrate 1 is made of hydrophilic silica.
In certain embodiments, the gold material electrode 6 is covered with polyimide adhesive tape or nail polish 7 on the surface, so that the gold material electrode 6 is connected with the electrolyte 5 in an insulating way.
In some embodiments, the reservoir 3 is defined by a plurality of polydimethylsiloxane plates, and the reservoir 3 has dimensions of 1 cm in length, 0.5 cm in width, and 0.1 cm in height.
In some embodiments, the electrolyte 5 is a NaCl solution or a hydrochloric acid solution or a phosphoric acid solution, and the concentration of the solution is 0.01% to 5%.
In certain embodiments, the reference electrode 4 that is the gate of the organic electrochemical transistor is an Ag/AgCl reference electrode 4 or a directly evaporated gold material electrode 6 or a modified gold material electrode 6.
As shown in fig. 1 and fig. 3, a method for manufacturing an organic electrochemical transistor as described above includes depositing gold material electrodes 6 on two sides of a conductive polymer nanowire array 2 by an evaporation method, and then constructing a liquid storage device with polydimethylsiloxane to form the organic electrochemical transistor, which specifically includes the following steps:
s1: the liquid bridge induction method (the liquid bridge refers to a small liquid column between solids, is called as a liquid bridge because the bridge has the meaning of connecting two places, and the liquid bridge is a section of liquid connecting the surfaces of two solids, the liquid bridge induction method refers to a method for preparing the ordered mesoporous material by using the liquid bridge as a reaction medium) is used for preparing the conductive polymer nanowire array 2 on the surface of the substrate 1.
Wherein, before use, the substrate 1 is cleaned: the substrate 1 is ultrasonically cleaned by water, acetone and isopropanol and then dried by nitrogen, and then the substrate 1 is treated by a plasma cleaning instrument to obtain a clean and hydrophilic substrate 1.
The preparation method comprises the following steps of preparing a conductive polymer nanowire array 2 on the surface of a substrate 1 through a silicon column template, wherein the specific process comprises the following steps:
s 11: preparing a silicon column template: modifying a silicon column template (a silicon column array is arranged on the silicon column template and comprises a plurality of vertically arranged silicon columns, a certain distance is reserved between every two adjacent silicon columns, and the silicon columns have certain width and height) by using fluorosilane (namely perfluorooctyl trichlorosilane), so that the surface and the side wall of the silicon column template generate wettability difference (namely surface hydrophobicity and side wall superhydrophobicity);
s 12: preparing PEDOT, namely PSS dispersion liquid;
s 13: dripping the PEDOT, PSS dispersion liquid on the modified silicon column template, pressing the silicon column template dripped with the PEDOT, PSS dispersion liquid with the substrate 1, and transferring the pressed substrate 1 and the silicon column template into an oven for drying;
s 14: and (3) disassembling the substrate 1 subjected to drying treatment and the silicon column template, and annealing the substrate 1 covered with the PEDOT, PSS nanowire array in the nitrogen atmosphere to obtain the substrate 1 covered with the conductive polymer nanowire array 2.
In certain embodiments, the process for formulating a dispersion of PEDOT: PSS is as follows: the PEDOT: PSS solution was prepared at a concentration of 10mg/mL (i.e., a blend of poly 3, 4-ethylenedioxythiophene: polystyrene sulfonate with water), 5% dimethyl sulfoxide (DMSO) and 0.5% 3- (methacryloyloxy) propyltrimethoxysilane (GOPS) were added and stirred well to form a uniform dispersion of PEDOT: PSS.
The PEDOT/PSS dispersion liquid can be replaced by a polyaniline dispersion liquid (aniline is dissolved in a hydrochloric acid solution to prepare a first solution, ammonium persulfate is dissolved in a hydrochloric acid solution to prepare a second solution, the first solution and the second solution are placed in an environment with the temperature of 0 ℃ for precooling for 15 minutes, then the first solution and the second solution are mixed to obtain a mixed solution, the mixed solution is fully stirred and then stands, the mixed solution after standing is centrifugally separated, an upper layer solution is removed after centrifugation to obtain polyaniline (emeraldine salt), the polyaniline is redispersed by hydrochloric acid with the pH =2.6, and is repeatedly centrifugally washed by hydrochloric acid with the pH =2.6 for three times to finally obtain a uniform dispersion liquid of the polyaniline (emeraldine salt)) or a polypyrrole dispersion liquid (the polypyrrole is prepared into a water dispersion liquid with the volume ratio of 1 to 1, and water and ethanol are used for solution dispersion, to give a uniform dispersion).
S2: and (2) evaporating and plating the gold material electrodes 6 at two ends of the conductive polymer nanowire array 2 by using a pre-designed mask (the mask is generally referred to as a photomask base which is an ideal photosensitive blank for manufacturing a fine photomask graph, and the required photomask can be obtained by a photoetching process).
Wherein, the specific process of S2 is as follows: covering a circuit mask plate on the surface of the substrate 1 with the conductive polymer nanowire array 2, and sequentially evaporating a 10nm chromium material and a 100nm gold material on the surface of the substrate 1 by using an evaporation method to prepare a gold material electrode 6, namely a source electrode and a drain electrode of the organic electrochemical transistor.
S3: the gold material electrode 6 is insulated by polyimide adhesive tape or nail polish 7, and is prevented from contacting with the electrolyte 5: the gold material electrodes 6 are covered with polyimide tape or nail polish 7, so that direct contact with the electrolyte 5 is avoided, and only the conductive polymer nanowire array 2 in the channel is exposed.
S4: a liquid storage tank 3 is prepared by adopting a Polydimethylsiloxane (PDMS) plate, and a conductive polymer nanowire array 2 is arranged in a space enclosed by the liquid storage tank 3.
S5: and adding the electrolyte 5 into the liquid storage tank 3, and inserting the reference electrode 4 into the electrolyte 5 as a grid electrode of the organic electrochemical transistor to obtain the complete organic electrochemical transistor.
The organic electrochemical transistor and the method for manufacturing the same according to the above description will now be described by referring to the following examples:
preparation of a channel size of 1000 μm: 500 μm: a200 nm (width: length: height) PEDOT: PSS nanowire array organic electrochemical transistor comprises the following specific steps:
1) cleaning of the substrate 1: soaking the substrate 1 in water for ultrasonic cleaning for 15 minutes, then respectively and sequentially carrying out ultrasonic cleaning on the substrate 1 for 15 minutes by using acetone and isopropanol, drying the substrate 1 by using nitrogen after cleaning is finished, and treating for 10 minutes by using a plasma cleaning instrument to obtain the hydrophilic substrate 1.
2) Modifying the silicon column template: the silicon pillar template was obtained by photolithography, and the area of the silicon pillar template was 1X 1 cm2, in which the pillar width was 2 μm and the pillar pitch was 5 μm. Before application, a silicon column template is firstly treated for 10 minutes by using a plasma cleaner, then the silicon column template and 1 mu L of perfluorooctyl trichlorosilane are added into a dryer, the vacuum pumping is carried out for 1 hour, then the dryer is transferred into an oven at 90 ℃ to be heated for three hours, and the silicon column template with hydrophobic surface and super-hydrophobic side wall (the super-hydrophobic is a novel material, can be automatically cleaned in a place needing to be cleaned and can be placed on the metal surface to prevent external corrosion) is prepared and obtained, as shown in figure 3.
3) Preparation of PEDOT PSS Dispersion: and (3) mixing PEDOT: the PSS solution was prepared at a concentration of 10mg/mL, after which 5% volume fraction DMSO and 0.5% volume fraction GOPS were added and mixed thoroughly to form a homogeneous, stable dispersion of PEDOT: PSS.
4) And dripping 10 mu L of the prepared PEDOT: PSS dispersion liquid on the silicon column template, then pressing the substrate 1 and the silicon column template tightly by using a clamp, and placing the substrate 1 and the silicon column template in an oven at 60 ℃ for 24 hours.
5) The dried substrate 1 was detached from the silicon pillar template as shown in fig. 4, to obtain a substrate 1 covered with PEDOT: PSS nanowire arrays (i.e., conductive polymer nanowire arrays 2), which was placed in a glove box and annealed at 140 ℃ for 30 minutes.
6) Covering a mask designed with an electrode pattern on the surface of a substrate 1, depositing 10nm of chromium material by using an evaporation process, depositing 100nm of gold material to obtain a gold material electrode 6, wherein the gold material electrode 6 is used as a source electrode and a drain electrode of an organic electrochemical transistor, and the channel has a width of 1000 micrometers and a length of 500 micrometers, as shown in fig. 5.
7) And covering the gold material electrode 6 by using a polyimide adhesive tape, and only exposing the PEDOT-PSS nanowire array.
8) As shown in fig. 6, Polydimethylsiloxane (PDMS) was cut into rectangular blocks of 1 cm × 0.5 cm × 0.1 cm and 0.5 cm × 0.5 cm × 0.1 cm, and PEDOT: and (3) enclosing the PSS nanowire array to form a liquid storage tank 3, injecting 0.9% NaCl solution, and inserting a reference electrode 4Ag/AgCl into the liquid storage tank 3 to obtain the complete organic electrochemical transistor.
The organic electrochemical transistor prepared by the steps can be directly used for electrical performance test, and the transconductance of the organic electrochemical transistor is 8900Sm-1(as shown in fig. 7 a), μ C [ (. mu.) ]C is the quality factor of the organic electrochemical transistor, which is obtained by multiplying the carrier mobility of the channel material by the volume specific capacitance) is 443Fcm-1V-1s-1(as shown in fig. 7 b), after 500 cycles, 88% over the initial cycle (as shown in fig. 7 c) performance was maintained.
In the technical scheme, the preparation method of the organic electrochemical transistor is simple and feasible, the size of the prepared organic electrochemical transistor is controllable, the organic electrochemical transistor can be directly used for electrical testing, and compared with the existing thin-film type conductive polymer organic electrochemical transistor, the organic electrochemical transistor has the advantages of transconductance, mu C, response speed, stability and other properties.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. The organic electrochemical transistor is characterized by comprising a gold material electrode, a substrate, a conductive polymer nanowire array, a liquid storage tank and a reference electrode, wherein the conductive polymer nanowire array is distributed on the substrate, the gold material electrode is used as a source electrode and a drain electrode of the organic electrochemical transistor and is arranged on the substrate and positioned at two ends of the conductive polymer nanowire array, the liquid storage tank is arranged on the substrate, the conductive polymer nanowire array is arranged in a space surrounded by the liquid storage tank, electrolyte is injected into the liquid storage tank, the gold material electrode is in insulated connection with the electrolyte, and the reference electrode is used as a grid electrode of the organic electrochemical transistor and is inserted into the electrolyte.
2. An organic electrochemical transistor according to claim 1, further comprising a layer of chromium material between the substrate and the gold material electrode.
3. The organic electrochemical transistor of claim 1, wherein the width of the nanowires in the array of conducting polymer nanowires is between 0.5 microns and 4 microns, and the length of the nanowires is consistent with the channel length of the organic electrochemical transistor.
4. The organic electrochemical transistor according to claim 1, wherein the gold material electrode surface is covered with polyimide tape or nail polish to connect the gold material electrode with the electrolyte in an insulating way.
5. An organic electrochemical transistor according to claim 1, wherein the reservoir is defined by a plurality of polydimethylsiloxane plates.
6. An organic electrochemical transistor according to claim 1, wherein the electrolyte is a NaCl solution or a hydrochloric acid solution or a phosphoric acid solution, with a solution concentration of 0.01% to 5%.
7. The organic electrochemical transistor according to claim 1, wherein the reference electrode as a gate electrode of the organic electrochemical transistor is an Ag/AgCl reference electrode or a directly evaporated gold material electrode or a modified gold material electrode.
8. A method of fabricating an organic electrochemical transistor according to any one of claims 1 to 7, comprising the steps of:
s1: preparing a conducting polymer nanowire array on the surface of a substrate;
s2: evaporating gold material electrodes at two ends of the conductive polymer nanowire array by using a mask;
s3: covering the gold material electrode with polyimide tape or nail polish to avoid direct contact with electrolyte and only expose the conducting polymer nanowire array in the channel;
s4: preparing a liquid storage tank on the surface of a substrate by adopting a polydimethylsiloxane plate, and placing a conductive polymer nanowire array in a space surrounded by the liquid storage tank;
s5: and adding the electrolyte into a liquid storage tank, and inserting a reference electrode serving as a grid electrode of the organic electrochemical transistor into the electrolyte to obtain the complete organic electrochemical transistor.
9. The method for manufacturing an organic electrochemical transistor according to claim 8, wherein the step of S1 specifically comprises the steps of:
s 11: preparing a silicon column template: modifying the silicon column template by using perfluorooctyl trichlorosilane to enable the surface and the side wall of the silicon column template to generate wettability difference;
s 12: preparing a dispersion liquid;
s 13: dropping the dispersion liquid on the modified silicon column template, pressing the silicon column template dropped with the dispersion liquid with the substrate, and transferring the pressed substrate and the silicon column template into an oven for drying;
s 14: and (3) disassembling the substrate subjected to drying treatment and the silicon column template, and annealing the substrate covered with the conducting polymer nanowire array on the surface to obtain the substrate covered with the conducting polymer nanowire array on the surface.
10. The method of claim 9, wherein the dispersion of s12 is a dispersion of PEDOT PSS, polyaniline, or polypyrrole.
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