CN112768568A - 一种perc电池板组装工艺 - Google Patents
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 10
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- 230000009286 beneficial effect Effects 0.000 description 1
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Abstract
本发明提供一种PERC电池板组装工艺，包括采用PERC技术的高效电池片，电池片采用SiO2/SiNx叠层膜作为背钝化介质层,依次经过背面开槽、丝网印刷、烧结形成背面局部接触,制备钝化发射极和背表面电池结构多晶硅太阳电池，采用恒光源I‑V特性测试系统测试其电性能，PERC结构多晶硅电池采用了常规丝网印刷工艺,有利于实现高效多晶硅电池、组件的产业化生产,具有很高的实际意义；高效组件意味着单位面积内发电量的增加，相应减少了组件每瓦的辅料成本，相同发电量情况下提高安装密度，节约安装成本；安装高效组件，同等安装面积下光伏组件阵列发电量将提高，并附带带动批量组件运输成本、安装成本、维护成本的大幅下降。
Description
技术领域
本发明涉及太阳能电池技术领域，具体为一种PERC电池板组装工艺。
背景技术
随着产业的不断发展，各电池厂商围绕转换效率提升进行了多重技术工艺的研究，一些新的技术正在光伏领域崭露头角。如背抛技术、激光开孔技术、钝化发射极背面接触(PERC)技术等，已经逐渐成熟且走向产业化。其中PERC技术推广速度最快，且具有工艺简单、成本较低、与现有电池生产线相容性高的优点，成为高效太阳能电池的主流方向。
未来光伏行业的发展是向低成本、高效率的方向发展，增加组件的功率，提高组件的转换效率，意味着提高了产品的市场竞争力,为此本发明提高一种PERC电池板组装工艺。
发明内容
本发明所解决的技术问题在于提供一种PERC电池板组装工艺，以解决上述背景技术中提出的问题。
本发明所解决的技术问题采用以下技术方案来实现：一种PERC电池板组装工艺，包括采用PERC技术的高效电池片，电池片采用SiO2/SiNx叠层膜作为背钝化介质层,依次经过背面开槽、丝网印刷、烧结形成背面局部接触,制备钝化发射极和背表面电池结构多晶硅太阳电池，采用恒光源I-V特性测试系统测试其电性能，具体的组装工艺步骤：
步骤一.电池片分选，分选外观合格的PERC高效电池片，将颜色一致、效率相同的电池片分为一块组件所需的数量；
步骤二.单焊：
a.根据工艺要求裁剪相应长度的焊带，将焊带放入助焊剂盒内浸泡；
b.将吹干的焊带平铺在电池片的主栅线上，使用电烙铁焊接；
步骤三.串焊：
a.将步骤二的电池片上下表面的焊线位置均匀贴合镀锡焊带；
b.将排布好的镀锡焊带的电池片送入烘箱进行预热；
c.将预热好的电池片和镀锡焊带送入真空焊接机；
步骤四.层叠，材料依次由下向上放置背板、EVA、电池片、EVA、PET膜、顶层光伏玻璃，将叠好的材料放入层压机的真空仓进行层压工艺；
步骤五.装框，对步骤四得到的固化电池板按照支架顶面形状进行拼接装框，装框好的固化电池板四周均为设置两边高中间低的排水槽；随后对固化电池板的出线处焊接接线盒并对所述固化电池板进行检测。
所述步骤二中焊带放入助焊剂盒内浸泡时间为三分钟。
所述步骤四中的层压机层压温度为125～140℃、真空度为1×10-1pa以下的条件下进行层压工艺。
所述步骤三中的烘箱预热温度低于焊料的熔点，温度维持在100左右，防止焊料熔化，有利于后续焊接的升温。
所述固化电池板进行装框的边框采用铝合金边框。
与现有技术相比，本发明的有益效果是：较之常规铝背场多晶硅太阳电池,PERC结构电池在开路电压Voc、短路电流密度Jsc、转换效率η方面分别提高了13mV、1.8mA/cm2和0.67％(绝对值),PERC结构多晶硅电池采用了常规丝网印刷工艺,有利于实现高效多晶硅电池、组件的产业化生产,具有很高的实际意义；高效组件意味着单位面积内发电量的增加，相应减少了组件每瓦的辅料成本，相同发电量情况下提高安装密度，节约安装成本；安装高效组件，同等安装面积下光伏组件阵列发电量将提高，并附带带动批量组件运输成本、安装成本、维护成本的大幅下降。
具体实施方式
为了使本发明的实现技术手段、创作特征、达成目的与功效易于明白了解，进一步阐述本发明。
一种PERC电池板组装工艺，包括采用PERC技术的高效电池片，电池片采用SiO2/SiNx叠层膜作为背钝化介质层,依次经过背面开槽、丝网印刷、烧结形成背面局部接触,制备钝化发射极和背表面电池结构多晶硅太阳电池，采用恒光源I-V特性测试系统测试其电性能，具体的组装工艺步骤：
步骤一.电池片分选，分选外观合格的PERC高效电池片，将颜色一致、效率相同的电池片分为一块组件所需的数量；
步骤二.单焊：
a.根据工艺要求裁剪相应长度的焊带，将焊带放入助焊剂盒内浸泡；
b.将吹干的焊带平铺在电池片的主栅线上，使用电烙铁焊接；
步骤三.串焊：
a.将步骤二的电池片上下表面的焊线位置均匀贴合镀锡焊带；
b.将排布好的镀锡焊带的电池片送入烘箱进行预热；
c.将预热好的电池片和镀锡焊带送入真空焊接机；
步骤四.层叠，材料依次由下向上放置背板、EVA、电池片、EVA、PET膜、顶层光伏玻璃，将叠好的材料放入层压机的真空仓进行层压工艺；
步骤五.装框，对步骤四得到的固化电池板按照支架顶面形状进行拼接装框，装框好的固化电池板四周均为设置两边高中间低的排水槽；随后对固化电池板的出线处焊接接线盒并对所述固化电池板进行检测。
所述步骤二中焊带放入助焊剂盒内浸泡时间为三分钟。
所述步骤四中的层压机层压温度为125～140℃、真空度为1×10-1pa以下的条件下进行层压工艺。
所述步骤三中的烘箱预热温度低于焊料的熔点，温度维持在100左右，防止焊料熔化，有利于后续焊接的升温。
所述固化电池板进行装框的边框采用铝合金边框。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明的要求保护范围由所附的权利要求书及其等效物界定。
Claims (5)
1.一种PERC电池板组装工艺，包括采用PERC技术的高效电池片，其特征在于：电池片采用SiO2/SiNx叠层膜作为背钝化介质层,依次经过背面开槽、丝网印刷、烧结形成背面局部接触,制备钝化发射极和背表面电池结构多晶硅太阳电池，采用恒光源I-V特性测试系统测试其电性能，具体的组装工艺步骤：
步骤一.电池片分选，分选外观合格的PERC高效电池片，将颜色一致、效率相同的电池片分为一块组件所需的数量；
步骤二.单焊：
a.根据工艺要求裁剪相应长度的焊带，将焊带放入助焊剂盒内浸泡；
b.将吹干的焊带平铺在电池片的主栅线上，使用电烙铁焊接；
步骤三.串焊：
a.将步骤二的电池片上下表面的焊线位置均匀贴合镀锡焊带；
b.将排布好的镀锡焊带的电池片送入烘箱进行预热；
c.将预热好的电池片和镀锡焊带送入真空焊接机；
步骤四.层叠，材料依次由下向上放置背板、EVA、电池片、EVA、PET膜、顶层光伏玻璃，将叠好的材料放入层压机的真空仓进行层压工艺；
步骤五.装框，对步骤四得到的固化电池板按照支架顶面形状进行拼接装框，装框好的固化电池板四周均为设置两边高中间低的排水槽；随后对固化电池板的出线处焊接接线盒并对所述固化电池板进行检测。
2.根据权利要求1所述的一种PERC电池板组装工艺，其特征在于：所述步骤二中焊带放入助焊剂盒内浸泡时间为三分钟。
3.根据权利要求1所述的一种PERC电池板组装工艺，其特征在于：所述步骤四中的层压机层压温度为125～140℃、真空度为1×10-1pa以下的条件下进行层压工艺。
4.根据权利要求1所述的一种PERC电池板组装工艺，其特征在于：所述步骤三中的烘箱预热温度低于焊料的熔点，温度维持在100左右，防止焊料熔化，有利于后续焊接的升温。
5.根据权利要求1所述的一种PERC电池板组装工艺，其特征在于：所述固化电池板进行装框的边框采用铝合金边框。
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| CN106903389A (zh) * | 2017-03-04 | 2017-06-30 | 常州亿晶光电科技有限公司 | 一种太阳能电池片串焊方法 |
| CN108258067A (zh) * | 2018-01-23 | 2018-07-06 | 黑河学院 | 一种太阳能电池的组装工艺 |
| CN111112789A (zh) * | 2019-12-20 | 2020-05-08 | 中建材浚鑫科技有限公司 | 一种光伏发电横联组件用电池片焊接工艺 |
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| CN104465883A (zh) * | 2014-12-23 | 2015-03-25 | 常熟高嘉能源科技有限公司 | 一种多晶硅太阳能组件的生产方法 |
| CN106903389A (zh) * | 2017-03-04 | 2017-06-30 | 常州亿晶光电科技有限公司 | 一种太阳能电池片串焊方法 |
| CN108258067A (zh) * | 2018-01-23 | 2018-07-06 | 黑河学院 | 一种太阳能电池的组装工艺 |
| CN111112789A (zh) * | 2019-12-20 | 2020-05-08 | 中建材浚鑫科技有限公司 | 一种光伏发电横联组件用电池片焊接工艺 |
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Application publication date: 20210507 |