CN112768496A - Display panel - Google Patents

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Publication number
CN112768496A
CN112768496A CN202110014358.XA CN202110014358A CN112768496A CN 112768496 A CN112768496 A CN 112768496A CN 202110014358 A CN202110014358 A CN 202110014358A CN 112768496 A CN112768496 A CN 112768496A
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electrode
layer
gate
display panel
thin film
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CN202110014358.XA
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CN112768496B (en
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张向向
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Human Computer Interaction (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The application provides a display panel, including: a substrate; the array layer comprises double-gate thin film transistors distributed in an array manner; a light emitting device disposed on the array layer; the biological recognition sensor is arranged on the array layer and is positioned between the two adjacent light-emitting devices; the double-gate thin film transistor comprises a first gate, a second gate, a source electrode and a drain electrode, the light-emitting device is connected with the drain electrode of the double-gate thin film transistor, and the biological identification sensor is connected with the first gate of the double-gate thin film transistor. The application adopts a double-gate thin film transistor to respectively drive the light-emitting device and the biological identification sensor, and can simultaneously realize display and biological identification.

Description

Display panel
Technical Field
The application relates to the technical field of display, in particular to a display panel.
Background
With the increasing maturity of OLED technology, the integration of biometric technology on OLED display panels has become a new navigation mark for advanced panels. Since the In-cell technology has the advantages of obvious thickness reduction, short process and the like, various manufacturers are developing advanced technologies of In-cells, including touch, 5G and biometric technologies. However, the current development technology is not yet mature. How to realize the combination of display technology and biological recognition technology has become a current research hotspot.
Therefore, there is a need to provide a new display panel to meet the current market demand.
Disclosure of Invention
The application provides a display panel capable of realizing combination of a display technology and a biometric technology.
In order to achieve the purpose, the technical scheme provided by the application is as follows:
the application provides a display panel, including:
a substrate;
the array layer comprises double-gate thin film transistors distributed in an array;
a light emitting device disposed on the array layer;
the biological recognition sensor is arranged on the array layer and is positioned between two adjacent light-emitting devices;
the double-gate thin film transistor comprises a first gate, a second gate, a source electrode and a drain electrode, the light-emitting device is connected with the drain electrode, and the biological identification sensor is connected with the first gate.
In the display panel of this application, biological identification sensor is gas sensitive diode, including first electrode, gas sensitive material layer and second electrode, just the gas sensitive material layer is located first electrode with between the second electrode.
In the display panel of the present application, the material of the gas sensitive material layer is tin oxide or manganese oxide.
In the display panel of the application, the first electrode is of a groove structure, the gas sensitive material layer is located in a groove of the first electrode, the second electrode and the first electrode are arranged on the same layer, and the second electrode is in electrical contact with the first electrode through a lead.
In the display panel of the present application, the second electrode is correspondingly located at the groove, and the second electrode is in contact with the gas sensitive material layer.
In the display panel of the present application, the light emitting device includes an anode, an organic light emitting layer, and a cathode, wherein the first electrode and the anode are disposed on the same layer, the organic light emitting layer is located on the anode, and the cathode is disposed on the organic light emitting layer.
In the display panel of this application, the array layer is including the gate insulation layer, the dielectric layer of range upon range of setting, still include the flat layer on the array layer, be equipped with on the dielectric layer and correspond the first via hole of first grid, be equipped with on the flat layer and correspond the second via hole of first via hole.
In the display panel of the present application, the array layer further includes a metal wire disposed on the same layer as the source electrode and the drain electrode, the metal wire is located on the dielectric layer and electrically contacts the first gate through the first via hole, and the first electrode is located on the planarization layer and electrically contacts the metal wire through the second via hole.
In the display panel of the present application, the first electrode is in contact with a surface of the first gate electrode through the second via hole and the first via hole.
In the display panel, a positive electrode of the biological identification sensor is connected with a data signal, and a negative electrode of the biological identification sensor is connected with the first grid;
the drain electrode of the double-gate thin film transistor is connected with the anode of the light-emitting device, the source electrode of the double-gate thin film transistor is connected with a first power voltage signal, and the second grid electrode of the double-gate thin film transistor is connected with a scanning signal;
the cathode of the light-emitting device is connected with a second power supply voltage signal;
when the data signal is at a high level and the scanning signal is at a low level, the first grid is opened, and a current channel between a first electrode and a second electrode of the biological recognition sensor is conducted; when the data signal is at a high level and the scanning signal is at a high level, the first grid and the second grid are both opened, a current channel between the first electrode and the second electrode of the biological recognition sensor is conducted, and meanwhile, the light-emitting device emits light.
The beneficial effect of this application does: the biological identification sensor is integrated in the display panel, and the light-emitting device and the biological identification sensor are respectively driven by the double-gate thin film transistor, wherein the light-emitting device is connected with the drain electrode of the double-gate thin film transistor, and the biological identification sensor is connected with the first grid electrode of the double-gate thin film transistor. By controlling the opening and closing of the first grid and the second grid of the double-grid thin film transistor, the combination of the display technology and the biological recognition technology can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a display panel provided in the present application;
fig. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure;
fig. 3 is a circuit diagram of a biometric sensor and a light emitting device according to an embodiment of the present disclosure;
fig. 4 is a schematic cross-sectional view of a display panel according to a second embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "longitudinal," "lateral," "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," and the like are used in the orientation or positional relationship indicated in the drawings, which are based on the orientation or positional relationship shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be considered as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The present application may repeat reference numerals and/or letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed.
The display panel of the present application will be described in detail with reference to specific examples.
As shown in fig. 1 to 4, the display panel of the present application includes: a substrate 10; an array layer (201, 202, 203, 204, 205) disposed on the substrate 10, the array layer including double-gate thin film transistors T distributed in an array; a plurality of light emitting devices 301 disposed on the array layer; a plurality of biometric sensors 302 are disposed on the array layer, and the biometric sensors 302 are located between two adjacent light emitting devices 301. The double-gate thin film transistor T comprises a first gate 2031, a second gate 2032, a source 2051 and a drain 2052, the light emitting device 301 is connected with the drain 2052 of the double-gate thin film transistor T, and the biological recognition sensor 302 is connected with the first gate 2031 of the double-gate thin film transistor T. The combination of the display technology and the biometric technology is implemented by controlling the turn-on and turn-off of the first gate electrode 2031 and the second gate electrode 2032 of the dual-gate thin film transistor T to drive the light emitting device 301 and the biometric sensor 302, respectively.
Example one
Fig. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the present disclosure. The display panel comprises a substrate 10, array layers (201, 202, 203, 204, 205), functional layers (301, 302, 303, 304, 305) and an encapsulation layer 40 which are sequentially stacked.
The substrate 10 may be a single-layer or double-layer polyimide film, or may be a glass substrate. The array layer comprises a pixel circuit and a biological identification sensing circuit, and specifically comprises an active layer 201, a gate insulating layer 202, a first metal layer 203, a dielectric layer 204 and a second metal layer 205 from bottom to top.
Wherein the active layer 201 may be a semiconductor oxide, such as IGZO, HIZO, IZO, a-InZnO, ZnO: F, In2O3:Sn、In2O3:Mo、Cd2SnO4、ZnO:Al、TiO2At least one of Nb and Cd-Sn-O; alternatively, the active layer may be an amorphous silicon material.
The gate insulating layer 202 and the dielectric layer 204 may be silicon oxide, silicon nitride or silicon oxynitride.
The first metal layer 203 includes a first gate 2031, a second gate 2032, and a gate line 2033 on the same layer, the active layer 201 includes a first channel region 2011 and a second channel region 2012 spaced apart from each other, the first gate 2031 is disposed corresponding to the first channel region 2011, the second gate 2032 is disposed corresponding to the second channel region 2012, and the second gate 2032 is connected to the corresponding gate line 2033.
Wherein the first metal layer 203 may include a single layer or a plurality of layers formed of at least one metal selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).
The second metal layer 205 includes a source electrode 2051, a drain electrode 2052, and a metal wire 2053 disposed in the same layer. The array layer comprises a first via hole and a source drain via hole, the source drain via hole penetrates through the dielectric layer 204 and the gate insulating layer 202, and the first via hole penetrates through the dielectric layer 204. The source electrode 2051 and the drain electrode 2052 are respectively in contact with the ohmic contact regions 2013 at two ends of the active layer 201 through the source and drain electrode via holes, and the metal wire 2053 is in contact with the first gate electrode 2031 through the first via hole. The active layer 201, the first gate electrode 2031, the second gate electrode 2032, the source electrode 2051, and the drain electrode 2052 form a double-gate thin film transistor T.
It should be noted that in the process of preparing the ohmic contact region 2013 in the display panel, the first gate 2031 and the second gate 2032 may be used as a mask to perform ion doping on the active layer 201, so that the number of times of using a photomask may be reduced.
The second metal layer 205 may have a single layer structure formed of at least one metal selected from copper (Cu), aluminum (Al), silver (Ag), molybdenum (Mo), chromium (Cr), neodymium (Nd), nickel (Ni), manganese (Mn), titanium (Ti), tantalum (Ta), and tungsten (W), or a multi-layer structure formed of an alloy of at least two of the above metals.
The functional layers comprise a flat layer 303, a light-emitting device 301 and a biological recognition sensor 302, wherein the flat layer 303 is positioned on the surface of the second metal layer 205. The flat layer 303 includes a second via hole and a third via hole penetrating through the flat layer 303, the second via hole corresponds to the first via hole, and the third via hole corresponds to the drain 2052. The biometric sensor 302 is in contact with the metal wire 2053 through the second via hole, and the light-emitting device 301 is in contact with the drain 2052 through the third via hole.
In the present embodiment, the biometric sensor 302 is a gas sensitive diode, and includes a first electrode 3021, a gas sensitive material layer 3023, and a second electrode 3022, and the gas sensitive material layer 3023 is located between the first electrode 3021 and the second electrode 3022. The first electrode 3021 is located on the surface of the planarization layer 303 and is disposed corresponding to the second via hole, and the first electrode 3021 is bent toward the inside of the second via hole in a region overlapping with the second via hole, so that the first electrode 3021 forms a groove structure. Wherein the first electrode 3021 is electrically connected to the metal wire 2053 through the second via.
The gas sensing material layer 3023 is located in the groove of the first electrode 3021, and the material of the gas sensing material layer 3023 includes, but is not limited to, tin oxide or manganese oxide.
The second electrode 3022 is disposed on the same layer as the first electrode 3021, the second electrode 3022 is correspondingly disposed in the groove of the first electrode 3021, and the second electrode 3022 is in contact with the gas sensing material layer 3023. A lead 305 is further disposed on the planarization layer 303, and the second electrode 3022 is electrically contacted with the first electrode 3021 through the lead 305.
In this embodiment, the light emitting device 301 includes an anode 3011, an organic light emitting layer 3012 and a cathode 3013, the anode 3011 is on the planarization layer 303, the organic light emitting layer 3012 is on the anode 3011, and the cathode 3013 is on the organic light emitting layer 3012. The planarization layer 303 is further provided with a wire 304, and the cathode 3013 of the light emitting device 301 is connected to a power source terminal (not shown) through the wire 304.
Wherein the first electrode 3021, the second electrode 3022, the anode 3011, the lead 305, and the wiring 304 are disposed in the same layer. Further, the first electrode 3021, the anode 3011, and the wiring 304 may be formed by the same material through the same masking process. Illustratively, the first electrode 3021, the anode 3011 and the connection line 304 may be made of transparent conductive materials, such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In)2O3) At least one of Indium Gallium Oxide (IGO) and zinc aluminum oxide (AZO); a metal material, such as at least one of aluminum, silver, gold, platinum, titanium, and the like, may also be used.
The lead 305, the second electrode 3022, and the cathode 3013 may be formed by the same material through the same masking process. For example, the lead 305, the second electrode 3022, and the cathode 3013 may be made of a metal material, such as at least one of aluminum, silver, lithium, magnesium, calcium, and indium; transparent conductive materials such as at least one of indium tin oxide, indium zinc oxide, indium gallium oxide, and zinc aluminum oxide may also be employed.
In the present application, the first electrode 3021 and the second electrode 3022 of the biometric sensor 302 may be made of the same material as the anode 3011 and the cathode 3013 of the light emitting device 301, but may be made of different materials. For example, the second electrode 3022 of the biometric sensor 302 may be made of a colored conductive material, such as molybdenum (Mo) metal.
The encapsulation layer 40 is located on the surface of the functional layer and is used for protecting the functional layer from invasion of external water, oxygen and the like.
In this embodiment, the operation principle of the biometric sensor 302 is as follows: the gas-sensitive material in the gas-sensitive material layer 3023 undergoes an exothermic chemical reaction with a specific gas (such as hydrogen or carbon monoxide), and the thermal reaction changes the resistivity of the first electrode 3021, for example, as the temperature of the thermal reaction increases, the resistivity of the first electrode 3021 decreases; the IC induces a current change to perform an identification function.
Fig. 3 is a circuit diagram of a biometric sensor and a light emitting device according to an embodiment of the present disclosure. The positive electrode of the biometric sensor 302 is connected to the data signal D, and the negative electrode of the biometric sensor 302 is connected to the first gate g1 of the dual-gate thin film transistor T. The drain electrode of the double-gate thin film transistor T is connected with the anode electrode of the light-emitting device 301, the source electrode of the double-gate thin film transistor T is connected with a first power supply voltage signal VDD, and the second gate electrode G2 of the double-gate thin film transistor T is connected with a scanning signal G; the cathode of the light emitting device 301 is connected to a second power voltage signal VSS.
When the data signal D input to the biometric sensor 302 is at a high level, the biometric sensor 302 is turned on, and the biometric sensor 302 can perform biometric recognition; when the data signal D input to the biometric sensor 302 is at a low level, the biometric sensor 302 is turned off and the biometric sensor 302 does not perform biometric recognition.
The data signal D may control the first gate G1 to be turned on and off, and the scan signal G may control the second gate G2 to be turned on and off.
When the scan signal G inputted to the second gate G2 is at a low level and the data signal D inputted to the biometric sensor 302 is at a low level, the first gate G1 and the second gate G2 are both turned off, and the current path between the first electrode and the second electrode of the biometric sensor 302 is turned off, so that the display panel does not perform biometric recognition and the light emitting device 301 does not emit light.
When the scan signal G inputted to the second gate G2 is at a low level and the data signal D inputted to the biometric sensor 302 is at a high level, the first gate G1 is turned on, the second gate G2 is turned off, and a current path between the first electrode and the second electrode of the biometric sensor 302 is turned on, and at this time, the display panel performs biometric recognition while the light emitting device 301 does not emit light.
When the scan signal G inputted to the second gate G2 is at a high level and the data signal D inputted to the biometric sensor 302 is at a low level, the first gate G1 is turned off, and the current path between the first electrode and the second electrode of the biometric sensor 302 is turned off, at which time the display panel does not perform biometric recognition while the light emitting device 301 does not emit light.
When the scan signal G inputted to the second gate G2 is at a high level and the data signal D inputted to the biometric sensor 302 is at a high level, the first gate G1 and the second gate G2 are both turned on, and a current path between the first electrode and the second electrode of the biometric sensor 302 is turned on, and at this time, the display panel performs biometric recognition while the light emitting device 301 emits light.
In the embodiment, the light emitting device and the biological recognition sensor are respectively driven by one double-gate thin film transistor, and the display technology and the biological recognition technology can be combined by controlling the opening and closing of the first gate and the second gate of the double-gate thin film transistor.
Example two
Fig. 4 is a schematic cross-sectional view of a display panel according to a second embodiment of the present application. The display panel of this embodiment has the same or similar structure as the display panel of the first embodiment, except that: in this embodiment, the biometric sensor 302 directly contacts the first gate 2031 of the dual gate thin film transistor T, so that no metal wires need to be disposed on the dielectric layer 204. Specifically, a first via hole on the dielectric layer 204 is penetrated by a second via hole on the planarization layer 303, and the first electrode 3021 of the biometric sensor 302 is bent toward the second via hole and the first via hole at a region overlapping with the second via hole, so that the first electrode 3021 forms a groove structure. The first electrode 3021 is in contact with the surface of the first gate 2031 through the second via and the first via.
Wherein, a gas sensitive material layer 3023 is located in the groove of the first electrode 3021, and the material of the gas sensitive material layer 3023 includes, but is not limited to, tin oxide or manganese oxide. The second electrode 3022 of the biometric sensor 302 is disposed on the same layer as the first electrode 3021, the second electrode 3022 is correspondingly located at the groove of the first electrode 3021, and the second electrode 3022 is in contact with the gas sensitive material layer 3023.
Other structures of the display panel of this embodiment are the same as those of the display panel of the first embodiment, and are not described again.
In the first embodiment, the first electrode 3021 of the biometric sensor 302 is in contact with the first gate 2031 of the dual-gate thin film transistor through the metal wire 2053, which includes two electrical contacts, thereby increasing the voltage Drop (IR Drop) of the data signal and other capacitive signal noise to some extent. Therefore, in the present embodiment, the first electrode 3021 of the biometric sensor 302 directly contacts the first gate 2031 of the dual-gate thin film transistor, so that the voltage drop is effectively reduced, and the sensitivity of the biometric sensor 302 is effectively improved.
According to the application, the biological recognition sensor is integrated in the display panel, the biological recognition sensor and the adjacent light-emitting device are connected to the same double-gate thin film transistor, and the light-emitting device and the biological recognition sensor are respectively driven by controlling the opening and closing of the first grid and the second grid of the double-gate thin film transistor, so that the combination of the display technology and the biological recognition technology is realized.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.

Claims (10)

1. A display panel, comprising:
a substrate;
the array layer comprises double-gate thin film transistors distributed in an array;
a light emitting device disposed on the array layer;
the biological recognition sensor is arranged on the array layer and is positioned between two adjacent light-emitting devices;
the double-gate thin film transistor comprises a first gate, a second gate, a source electrode and a drain electrode, the light-emitting device is connected with the drain electrode, and the biological identification sensor is connected with the first gate.
2. The display panel of claim 1, wherein the biometric sensor is a gas sensitive diode comprising a first electrode, a gas sensitive material layer, and a second electrode, and wherein the gas sensitive material layer is located between the first electrode and the second electrode.
3. The display panel according to claim 2, wherein the material of the gas-sensitive material layer is tin oxide or manganese oxide.
4. The display panel according to claim 2, wherein the first electrode is a groove structure, the gas sensitive material layer is located in a groove of the first electrode, the second electrode is disposed on the same layer as the first electrode, and the second electrode is electrically contacted with the first electrode through a lead.
5. The display panel according to claim 4, wherein the second electrode is correspondingly located at the groove, and the second electrode is in contact with the gas-sensitive material layer.
6. The display panel according to claim 4, wherein the light emitting device comprises an anode, an organic light emitting layer, and a cathode, wherein the first electrode is disposed on the same layer as the anode, the organic light emitting layer is disposed on the anode, and the cathode is disposed on the organic light emitting layer.
7. The display panel according to claim 2, wherein the array layer comprises a gate insulating layer and a dielectric layer arranged in a stacked manner, the array layer further comprises a flat layer thereon, the dielectric layer is provided with a first via corresponding to the first gate, and the flat layer is provided with a second via corresponding to the first via.
8. The display panel of claim 7, wherein the array layer further comprises a metal wire disposed on the same layer as the source and the drain, the metal wire is disposed on the dielectric layer and electrically contacts the first gate through the first via, and the first electrode is disposed on the planarization layer and electrically contacts the metal wire through the second via.
9. The display panel according to claim 7, wherein the first electrode is in contact with a surface of the first gate electrode through the second via hole and the first via hole.
10. The display panel according to claim 2, wherein a positive electrode of the biometric sensor is connected to a data signal, and a negative electrode of the biometric sensor is connected to the first gate;
the drain electrode of the double-gate thin film transistor is connected with the anode of the light-emitting device, the source electrode of the double-gate thin film transistor is connected with a first power voltage signal, and the second grid electrode of the double-gate thin film transistor is connected with a scanning signal;
the cathode of the light-emitting device is connected with a second power supply voltage signal;
when the data signal is at a high level and the scanning signal is at a low level, the first grid is opened, and a current channel between a first electrode and a second electrode of the biological recognition sensor is conducted; when the data signal is at a high level and the scanning signal is at a high level, the first grid and the second grid are both opened, a current channel between the first electrode and the second electrode of the biological recognition sensor is conducted, and meanwhile, the light-emitting device emits light.
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